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DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518
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LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C
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ISS 99 diode Datasheets Context Search

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ISS 99 diode

Abstract: OPT201 OPT201KP 30E-9
Text: 4 1E6 ROUT 55 5 75 CFB 55 2 40E-12 RPHOTO 2 8 100E6 CPHOTO 2 8 4000E-12 DPHOTO 2 8 DIODE .MODEL DIODE .ENDS D * OPAMP MODEL .SUBCKT OPAMP 1 2 3 4 5 C1 11 12 10.49E-12 C2 6 7 45.00E-12 CSS 10 99 61.36E-12 DC 5 53 DX DE 54 5 DX DLP 90 91 DX DLN 92 90 DX DP 4 3 DX EGND 99 0 POLY(2) (3,0) (4,0) 0 .5 .5 FB 7 99 POLY(5) VB VC VE VLP VLN 0 29.43E9 -30E9 30E9 30E9 -30E9 GA 6 0 11 12 107.4E-6 GCM 0 6 10 99 1.074E-9 ISS 3 10 DC 117.0E-6 HLIM 90 0 VLIM 1E3 J1 11 2 10 JX


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PDF OPT201 00E-12 49E-12 36E-12 -30E9 -30E9 074E-9 307E3 ISS 99 diode OPT201KP 30E-9
00E-6

Abstract: OPT209
Text: egnd 99 0 poly(2) (3,0) (4,0) 0 .5 .5 fb 7 99 poly(5) vb vc ve vlp vln 0 99.7E6 -99E6 99E6 99E6 -99E6 ga 6 0 11 12 100.5E-6 gcm 0 6 10 99 1.005E-9 iss 3 10 dc 16.00E-6 hlim 90 0 vlim 1K j1 11 2 10 jx j2 12 1 10 jx r2 6 9 100.0E3 rd1 4 11 9.947E3 rd2 4 12 9.947E3 ro1 8 5 75 ro2 7 99 , 2 4 1MEG ROUT 55 5 5 CFB 55 2 10pF RPHOTO 2 8 1000MEG CPHOTO 2 8 600pF DPHOTO 2 8 DIODE MODEL DIODE D .ends OPT209 * -* OPAMP MODEL .subckt OPAMP 1 2 3 4 5 * c1


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PDF OPT209 16kHz, OPT209 63E-12 000E-12 -99E6 -99E6 005E-9 00E-6 947E3 00E-6
ISS 99 diode

Abstract: No abstract text available
Text: ß 250 KHz Power efficiency 88 % Voltage conversion efficiency, 99 % Iss , conversion of +5 V to - 5V supplies • • • Portable and mobile equipment 99 % open circuit , Current Supply Current vs Supply Voltage Vgen = 2 V Iss = 0 mA 10 15 20 25 30 , 100 -1 -2 > -3 « T w -5 > -6 -7 -8 llss —5 mA T f iss = 0 mA I -9 , €ž °i S' S 5 g 99 98 97 96 95 94 93 92 2 3 4 5 6 7 8 9 10


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PDF GDGG734 AVC7660S9C OT-25 250KHz AVC7660S9C ISS 99 diode
OPT202

Abstract: ISS 99 diode
Text: dx egnd 99 0 poly(2) (3,0) (4,0) 0 .5 .5 fb 7 99 poly(5) vb vc ve vlp vln 0 99.47E6 -99E6 99E6 99E6 -99E6 ga 6 0 11 12 100.5E-6 gcm 0 6 10 99 503.8E-12 iss 3 10 dc 4.000E-6 hlim 90 0 vlim 1K , 2 4 1MEG ROUT 55 5 5 CFB 55 2 3pF RPHOTO 2 8 100MEG CPHOTO 2 8 600pF DPHOTO 2 8 DIODE .MODEL DIODE D .ends OPT202 * -* OPAMP MODEL * .subckt OPAMP 1 2 3 4 5 , ro2 7 99 100 rp 3 4 75.00E3 rss 10 99 50.00E6 vb 9 0 dc 0 vc 3 53 dc .6 ve 54 4 dc .6 vlim


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PDF OPT202 50KHz, OPT202 715E-12 000E-12 -99E6 -99E6 8E-12 000E-6 947E3 ISS 99 diode
ISS 99 diode

Abstract: OPT211
Text: dx dlp 90 91 dx dln 92 90 dx dp 4 3 dx egnd 99 0 poly(2) (3,0) (4,0) 0 .5 .5 fb 7 99 poly(5) vb vc ve vlp vln 0 99E7 -99E7 99E7 99E7 -99E7 ga 6 0 11 12 100.5E-6 gcm 0 6 10 99 503.8E-12 iss , * Photodiode RPHOTO 2 7 1000GIG CPHOTO 2 7 600pF DPHOTO 2 7 DIODE CSUB 2 8 80pF .MODEL DIODE D .ENDS , 9.947E3 rd2 4 12 9.947E3 ro1 8 5 5 ro2 7 99 5 rp 3 4 75.00E3 rss 10 99 50.00E6 vb 9 0 dc 0 vc


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PDF OPT211 600pF 715E-12 000E-12 -99E7 -99E7 8E-12 000E-6 947E3 ISS 99 diode
ISS 99 diode

Abstract: No abstract text available
Text: well outside the audio band 99 % open circuit efficiency Panel meters and LCD negative supply Data , CHARACTERISTICS V gen = + 5V, T amb = 25 °C, Iss = 2.5 mA , Test circuit given below, unless noted , Oscillator freguency 250 KHz Power efficiency 88 % Voltage conversion efficiency, 99 % Iss = 0 mA TEST CIRCUIT 143 WIRELESS - Voltage Converter AVC7660 TYPICAL , Supply Current vs Supply Voltage Vgen = 2 V Iss = 0 mA 10 15 20 25 30 Load


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PDF AVC7660 OT-25 250KHz AVC7660S9C CT039 ISS 99 diode
Not Available

Abstract: No abstract text available
Text: efficiency, 99 % Oscillator frequency Iss = 0 mA TEST CIRCUIT 23/04/98, AVC7660S9C , % efficiency under 2.5 mA load • • 99 % open circuit efficiency • Voltage doubling â , Temperature - 65° C to + 150° C ELECTRICAL CHARACTERISTICS VG = + 5V, Tamb = 25 °C. Iss = 2.5 mA , 80 Output Voltage vs Load Current Supply Current vs Supply Voltage Vgen = 2 V Iss = 0 mA , supply voltage, for example generating +6V from a +3V supply. The diode and resistor are used to ensure


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PDF AVC7660S9C OT-25 250KHz AVC7660S9C Gfll4S77
Not Available

Abstract: No abstract text available
Text: Voltage conversion efficiency, Iss = 0 mA 75 250 88 99 2.0 10 150 MIN TYP 400 MAX 850 UNIT HA V V n KHz % , band 99 % open circuit efficiency 88% efficiency under 2.5 mA load APPLICATIONS Simple conversion , 5 °C, Iss = 2 .5 mA , Test circuit given below, unless noted PARAMETER Supply Current, lS s = 0 mA , Supply Voltage Iss = 0 mA 10 15 20 25 30 Load Current [mA] 5 6 Vgen [V] 7 Output , +3V supply. The diode and resistor are used to ensure oscillator start up. The diode quickly ends up


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PDF AVC7660 OT-25 250KHz AVC7660S9C AVC7660S9C
IRF7101

Abstract: IRF7326D2
Text: PD - 93763 IRF7326D2 FETKYTM MOSFET / Schottky Diode q q q q q q Co-packaged HEXFET® Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF , Diode Recovery dv/dt Junction and Storage Temperature Range Units -3.6 -2.9 -29 2.0 1.3 16 , / 99 This Material Copyrighted By Its Respective Manufacturer IRF7326D2 MOSFET Electrical , Parameter IS Continuous Source Current (Body Diode ) ISM Pulsed Source Current (Body Diode ) VSD Body


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PDF IRF7326D2 IRF7101 IRF7326D2
1999 - IRF7326D2

Abstract: IRF7101
Text: PD - 93763 IRF7326D2 FETKYTM MOSFET / Schottky Diode q q q q q q Co-packaged HEXFET® Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF , Diode Recovery dv/dt Junction and Storage Temperature Range Units -3.6 -2.9 -29 2.0 1.3 16 , / 99 IRF7326D2 MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified , ) MOSFET Source-Drain Ratings and Characteristics Parameter IS Continuous Source Current (Body Diode


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PDF IRF7326D2 IRF7326D2 IRF7101
1999 - IRL3803

Abstract: No abstract text available
Text: Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode , Typ. Max. Units ­­­ 0.5 ­­­ 0.55 ­­­ 58 °C/W 1 1/29/ 99 IRLBA3803/P , Q rr ton Parameter Continuous Source Current (Body Diode ) Pulsed Source Current (Body Diode ) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ , 720 p-n junction diode . S ­­­ ­­­ 1.3 V TJ = 25°C, IS = 71A, VGS = 0V ­­­ 120 180 ns TJ = 25


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PDF 1841A IRLBA3803/P Super-220 IRL3803
1999 - 4.5V TO 100V INPUT REGULATOR

Abstract: No abstract text available
Text: Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt , are on page 8 www.irf.com 1 5/7/ 99 IRFPS37N50A Static @ TJ = 25°C (unless otherwise , Units °C/W Diode Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode ) Pulsed Source Current (Body Diode ) Diode Forward Voltage Reverse Recovery Time Reverse , A G integral reverse ­­­ ­­­ 144 S p-n junction diode . ­­­ ­­­ 1.5 V TJ = 25°C, IS = 36A, VGS = 0V


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PDF 1822A IRFPS37N50A 4.5V TO 100V INPUT REGULATOR
1999 - CD4007A

Abstract: 023mA CD4007 175C 300C
Text: MICROCIRCUIT DATA SHEET Original Creation Date: 07/15/ 99 Last Update Date: 07/30/ 99 Last Major Revision Date: 07/15/ 99 MJCD4007A-X REV 1A0 DUAL COMPLEMENTARY PAIR PLUS INVERTER General , transistors suitable for series /shunt applications. All inputs are protected from static discharge by diode , =0.0V (each input measured separately) 3, 4 INPUTS -100.0 nA 1, 2 ISS Power Supply Current , performed at production burn-in and Group C (operational life test). ISS Power Supply Current VDD


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PDF MJCD4007A-X CD4007 CD4007A JM4007ABCA MIL-STD-883, M0003466 JRETS4007MX, CD4007A 023mA 175C 300C
2007 - 5R199P

Abstract: 5R199 IPP50R199CP JESD22
Text: Reverse Diode Diode forward voltage V SD Reverse recovery time V GS=0 V, I F= 9.9 A, T j=25 °C , IPP50R199CP Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current IS Diode pulse current 2) I S,pulse Reverse diode dv /dt 4) dv /dt Parameter Value Symbol Conditions Symbol Conditions Unit 9.9 T C=25 °C A 40 15 V/ns , =0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D= 9.9 A, T


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PDF IPP50R199CP PG-TO220 5R199P 5R199P 5R199 IPP50R199CP JESD22
2007 - 6R199P

Abstract: 6R199P mosfet 6R199P+mosfet
Text: IPW60R199CP Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current IS Diode pulse current 2) I S,pulse Reverse diode dv /dt 4) dv /dt Parameter Value Symbol Conditions Symbol Conditions Unit 9.9 T C=25 °C A 51 15 V/ns , =20 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D= 9.9 A, T j=25 °C - 0.18 0.199 Ω V GS=10 V, I D= 9.9 A, T j=150 °C - 0.49 -


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PDF IPW60R199CP PG-TO247-3 SP000089802 6R199P 6R199P 6R199P mosfet 6R199P+mosfet
2006 - 5r199p

Abstract: D66A
Text: IPP50R199CP Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current 2) Reverse diode d v /dt 4) Symbol Conditions IS I S,pulse dv /dt T C=25 °C Value 9.9 40 15 V/ns Unit A Parameter Symbol Conditions min. Values typ. max. Unit , , V DS=0 V V GS=10 V, I D= 9.9 A, T j=25 °C V GS=10 V, I D= 9.9 A, T j=150 °C Gate resistance RG f =1 , charge Gate charge total Gate plateau voltage Reverse Diode Diode forward voltage Reverse recovery time


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PDF IPP50R199CP PG-TO220 IPP50R199CP PG-TO220 5R199P 5r199p D66A
2007 - 6R199P

Abstract: to-263-3 smd transistor marking DF
Text: Continuous diode forward current Diode pulse current 2) Reverse diode d v /dt 4) Symbol Conditions IS I S,pulse dv /dt T C=25 °C Value 9.9 51 15 V/ns Unit A Parameter Symbol Conditions min. Values typ , resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D= 9.9 A, T j=25 °C V GS=10 V, I D= 9.9 A, T j , Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current 1) 2


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PDF IPB60R199CP PG-TO263 SP000223256 6R199P 6R199P to-263-3 smd transistor marking DF
1999 - ISS 99 diode

Abstract: No abstract text available
Text: DD=400 V, I D= 9.9 A, V GS=0 to 10 V 8 11 32 5.0 43 V nC C iss C oss C o(er) C o(tr) t d(on) tr t d , Continuous diode forward current Diode pulse current Reverse diode d v /dt Maximum diode commutation speed Symbol Conditions IS I S,pulse dv /dt di /dt T C=25 °C Value 9.9 51 tbd tbd V/ns A/µs Unit A Parameter , leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D= 9.9 A, T j=25 °C V GS=10 V, I D= 9.9 A, T j=150 °C Gate resistance Rev. 1.0 Preliminary Datasheet RG f =1


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PDF IPP60R199CP PG-TO220-3-1 SP000084278 6R199P ISS 99 diode
2006 - Not Available

Abstract: No abstract text available
Text: Continuous diode forward current 1) Diode pulse current 2) Reverse diode d v /dt 4) Symbol Conditions IS I S,pulse dv /dt T C=25 °C Value 9.9 40 15 V/ns Unit A Parameter Symbol Conditions min. Values typ , ) V GS=20 V, V DS=0 V V GS=10 V, I D= 9.9 A, T j=25 °C V GS=10 V, I D= 9.9 A, T j=150 °C Gate resistance , drain charge Gate charge total Gate plateau voltage Reverse Diode Diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current 0) Values typ. max. Unit C iss C


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PDF IPA50R199CP PG-TO220 IPA50R199CP 5R199CP
2006 - IPA50R199CP

Abstract: No abstract text available
Text: Continuous diode forward current 1) Diode pulse current 2) Reverse diode d v /dt 4) Symbol Conditions IS I S,pulse dv /dt T C=25 °C Value 9.9 40 15 V/ns Unit A Parameter Symbol Conditions min. Values typ , ) V GS=20 V, V DS=0 V V GS=10 V, I D= 9.9 A, T j=25 °C V GS=10 V, I D= 9.9 A, T j=150 °C Gate resistance , drain charge Gate charge total Gate plateau voltage Reverse Diode Diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current 0) Values typ. max. Unit C iss C


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PDF IPA50R199CP PG-TO220 IPA50R199CP PG-TO220FP 5R199CP
2006 - 5r199p

Abstract: IPB50R199CP
Text: , at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current 2) Reverse diode d v /dt 4) Symbol Conditions IS I S,pulse dv /dt T C=25 °C Value 9.9 40 15 V/ns , on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D= 9.9 A, T j=25 °C V GS=10 V, I D= 9.9 A , Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode , ) Values typ. max. Unit C iss C oss C o(er) V GS=0 V, V DS=100 V, f =1 MHz - 1800 80 75 -


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PDF IPB50R199CP PG-TO263 IPB50R199CP PG-TO263 5R199P 5r199p
2009 - mosfet 6R199

Abstract: 6R199 IPB60R199CPA IPB60R099CPA IPI60R099CPA IPP60R099CPA PG-TO-263-3-2 PG-TO263 6R199A
Text: Charge Characteristics V DD=400 V, I D= 9.9 A, V GS=0 to 10 V nC Reverse Diode Diode forward , , unless otherwise specified Value Parameter Symbol Conditions Unit Continuous diode forward current IS Diode pulse current1) I S,pulse 51 Reverse diode dv /dt 3) dv /dt 15 V/ns Parameter Symbol Conditions Values Unit 9.9 T C=25 °C A min. typ , nA Drain-source on-state resistance R DS(on) V GS=10 V, I D= 9.9 A, T j=25 °C - 0.18


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PDF IPB60R199CPA PG-TO263-3 6R199A PG-TO262-3-1 PG-TO220-3-1 PG-TO247-3-41 mosfet 6R199 6R199 IPB60R199CPA IPB60R099CPA IPI60R099CPA IPP60R099CPA PG-TO-263-3-2 PG-TO263 6R199A
2006 - 6R199P

Abstract: 6R199P mosfet 6R199 6R199P DATA SHEET mosfet 6R199 IPW60R199CP SP000089802 IPW60R199 JESD22
Text: Charge Characteristics V DD=400 V, I D= 9.9 A, V GS=0 to 10 V nC Reverse Diode Diode forward , Forward characteristics of reverse diode V GS=f(Q gate); I D= 9.9 A pulsed I F=f(V SD) parameter , , at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current IS Diode pulse current 2) I S,pulse Reverse diode dv /dt 4) dv /dt Parameter Value Symbol Conditions Symbol Conditions Unit 9.9 T C=25 °C A 51 15 V/ns Values Unit min


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PDF IPW60R199CP PG-TO247-3-1 SP000089802 6R199P 6R199P 6R199P mosfet 6R199 6R199P DATA SHEET mosfet 6R199 IPW60R199CP SP000089802 IPW60R199 JESD22
2007 - 5R199P

Abstract: 5r199p data IPI50R199CP JESD22 TO-262-3 package infineon TO-262-3
Text: 10 V nC Reverse Diode Diode forward voltage V SD Reverse recovery time V GS=0 V, I F= 9.9 , 10 Forward characteristics of reverse diode V GS=f(Q gate); I D= 9.9 A pulsed I F=f(V SD , Parameter Continuous diode forward current IS Diode pulse current 2) I S,pulse Reverse diode dv /dt 4) dv /dt Parameter Value Symbol Conditions Symbol Conditions Unit 9.9 T C , ) V GS=10 V, I D= 9.9 A, T j=25 °C - 0.18 0.199 V GS=10 V, I D= 9.9 A, T j=150 °C -


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PDF IPI50R199CP O-262-3 PG-TO262 5R199P 5R199P 5r199p data IPI50R199CP JESD22 TO-262-3 package infineon TO-262-3
2007 - 5R199

Abstract: No abstract text available
Text: Charge Characteristics V DD=400 V, I D= 9.9 A, V GS=0 to 10 V nC Reverse Diode Diode forward , Typ. gate charge 10 Forward characteristics of reverse diode V GS=f(Q gate); I D= 9.9 A pulsed , , unless otherwise specified Parameter Continuous diode forward current 1) IS Diode pulse current 2) I S,pulse Reverse diode dv /dt 4) dv /dt Parameter Value Symbol Conditions Symbol Conditions Unit 9.9 T C=25 °C A 40 15 V/ns Values Unit min. typ. max. -


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PDF IPA50R199CP PG-TO220 PG-TO220 5R199P 5R199
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