The Datasheet Archive

ISOPLUS247TM Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2006 - IXFB100N50P

Abstract: IXFN60N80P IXFK44N80P IXFK64N60P IXFN100N50P fast diode SOT-227 IXFX44N80P IXFK80N50P IXFB60N80P IXFN82N60P
Text: -264 Type R, X ISOPLUS247TM PLUS247 IXYS' proven HiPerFET process yields Power MOSFETs with a fast , (DCB-Case) ( ISOPLUS247TM with Internal DCB Isolation) RTH(J-C) 0.22 K/W RTH(C-S) RTH(J-S , -264 SOT-227 ISOPLUS247TM PLUS247 TO-264 SOT-227 ISOPLUS247TM PLUS247 TO-264 ISOPLUS264TM SOT-227 TO-264 SOT-227 ISOPLUS247TM PLUS247 TO-264 ISOPLUS264TM SOT-227 TO-264 SOT-227 ISOPLUS247TM , circuit complexity ISOPLUS247TM · Provides 2500V, UL recognized isolation with superior thermal


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PDF PLUS264 ISOPLUS247TM E153432) IXFB100N50P IXFN60N80P IXFK44N80P IXFK64N60P IXFN100N50P fast diode SOT-227 IXFX44N80P IXFK80N50P IXFB60N80P IXFN82N60P
IXFR170N10

Abstract: SIL-PAD to-247 IXFX55N50 ISOPLUS247 IXFR150N10 26N50 IXFR55N50 IXFX180N10 PLUS247 SIL-PAD
Text: ceramic washer with an ISOPLUS247TM. The IXYS type designator is the letter "R", for example IXFR 26N50 , ISOPLUS247TM (Table 1) package not only provides a 2500V(RMS) isolation voltage rating but also achieves , these two manufacturing techniques culminated in the production of our new ISOPLUS247TM package, shown , section 100 63 W The ISOPLUS247TM is a fully isolated plastic package in the standard TO , withstand an isolation voltage higher than 6 kV, but for the ISOPLUS247TM , it has been reduced to 2.5 kV


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PDF ISOPLUS247 IXFR55N50 IXFX55N50 IXFX55N50 D-68623 IXFR170N10 SIL-PAD to-247 IXFR150N10 26N50 IXFR55N50 IXFX180N10 PLUS247 SIL-PAD
2000 - transistor 12n60c

Abstract: 12N60c equivalent 30N120D1 13N50 equivalent MOSFET 1200v 30a MOSFET 1000v 30a 12n60c CS20-22MOF1 30n120d 12N60c MOSFET
Text: ISOPLUS247TM. There are already more than 50 different ISOPLUS247TM types available (see page A4-2). Another , ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247TM ­ ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247TM is , circuit boards ­ allowing special functions to be realized Example: ISOPLUS247TM compared to , IXFR 180N10 IXFX 180N10 ISOPLUS247TM PLUS247TM internal DCB external foil 0.30 0.22


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PDF ISOPLUS247TM ISOPLUS247TM PLUS247TM-package FBO16-08N FBE22-06N1 21-05QC 22-08N 75-01F 21-08i01 transistor 12n60c 12N60c equivalent 30N120D1 13N50 equivalent MOSFET 1200v 30a MOSFET 1000v 30a 12n60c CS20-22MOF1 30n120d 12N60c MOSFET
IXAN0028

Abstract: IXFX55N50 26N50 ISOPLUS247 IXFR150N10 IXFR170N10 IXFX180N10 PLUS247
Text: ceramic washer with an ISOPLUS247TM. The IXYS type designator is the letter "R", for example IXFR 26N50 , ISOPLUS247TM (Table 1) package not only provides a 2500V(RMS) isolation voltage rating but also achieves , these two manufacturing techniques culminated in the production of our new ISOPLUS247TM package, shown , section 100 63 W The ISOPLUS247TM is a fully isolated plastic package in the standard TO , withstand an isolation voltage higher than 6 kV, but for the ISOPLUS247TM , it has been reduced to 2.5 kV


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PDF IXAN0028 ISOPLUS247 IXFR55N50 IXFX55N50 IXFX55N50 D-68623 IXAN0028 26N50 IXFR150N10 IXFR170N10 IXFX180N10 PLUS247
IXAN0025

Abstract: diode kv 1236 SIL-PAD 1000 TO 247 SIL-PAD to-247 IXFR170N10 SIL-PAD 600 PLUS247 CS 112 thyristor IXFR150N10 SIL-PAD
Text: ISOPLUS247TM is a fully isolated plastic package in the standard TO-247 outline without a screw hole. This allows a one-to-one replacement of a PLUS247 isolated by foil or ceramic washer with an ISOPLUS247TM. , namely ISOPLUS220TM, ISOPLUS247TM and ISOPLUS i4TM, not only provides a 2500 V(RMS) isolation voltage , these two manufacturing techniques culminated in the production of our new ISOPLUS247TM , ISOPLUS220TM , of ISOPLUS247TM packaging is the very low thermal resistance achievable in a rugged, high voltage


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PDF IXAN0025 ISOPLUS220TM ISOPLUS247TM D-68623 IXAN0025 diode kv 1236 SIL-PAD 1000 TO 247 SIL-PAD to-247 IXFR170N10 SIL-PAD 600 PLUS247 CS 112 thyristor IXFR150N10 SIL-PAD
C1218

Abstract: C1222 ixfh 60N60 IXFX 44N80 C1138 C1238 20n80 C1228 C1172 IXFN 230N10 230N10
Text: ) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC(IXFN) Page IXFH 80N06-11 IXFH 76N07-11 IXFH , 0.018 0.4 ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC(IXFN) M it e Page , -247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN , £ 2 14 15 0.75 0.7 TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO


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PDF 67N10 75N10 75N10Q 80N10Q O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 C1218 C1222 ixfh 60N60 IXFX 44N80 C1138 C1238 20n80 C1228 C1172 IXFN 230N10 230N10
2008 - 40N60C

Abstract: ISOPLUS247 ISOPLUS247TM ixkr 40n60c IXKR40N60C
Text: IXKR 40N60C CoolMOSTM 1) Power MOSFET VDSS N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base D RDS(on) 600 V in ISOPLUS247TM Package ID25 38 A 70 m ISOPLUS 247TM E153432 G G D Preliminary data S S G , = 25°C TVJ = 125°C 2.1 3.9 60 V 25 µA µA · ISOPLUS247TM package with DCB Base - , V 0.45 K/W 20080523a 1-2 IXKR 40N60C ISOPLUS247TM OUTLINE Component Symbol


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PDF 40N60C ISOPLUS247TM 247TM E153432 O-247 20080523a 40N60C ISOPLUS247 ixkr 40n60c IXKR40N60C
ZVT full bridge for welding

Abstract: ZVT full bridge ixfn56n90p arc welding rectifier IXFR ixfn*56N90P IXFH18N90P IXFV18N90PS IXFV18N90P zvt mosfet full bridge Ac/dc
Text: 97 300 0.620 200 Single ISOPLUS247TM IXFH12N90P 900 12.0 0.900 3080 , 0.540 230 Single ISOPLUS247TM IXFH18N90P 900 18.0 0.600 5230 97 300 , ISOPLUS247TM IXFH24N90P 900 24.0 0.420 7200 130 300 0.190 660 Single TO


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PDF E153432) com/IXAN0022 PBN90POLARHIPERFET ZVT full bridge for welding ZVT full bridge ixfn56n90p arc welding rectifier IXFR ixfn*56N90P IXFH18N90P IXFV18N90PS IXFV18N90P zvt mosfet full bridge Ac/dc
2000 - 12n60c

Abstract: 60n60 igbt diode b242 20N30 ixgk50n60bu1 50n60bd1 b2211 120n60 60N60 b2-111
Text: HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 TO-220 IC VCE(sat) (IXGP) TC = max 25 °C TC=25 °C A V TO-263 (IXGA) TO-247 (IXGH) PLUS247 (IXGX) TO-268 ISOPLUS247TM (IXGT) (IXGR) TO-264 (IXGK , (IXGX) TO-268 ISOPLUS247TM (IXGT) (IXGR) TO-264 (IXGK) miniBLOC (IXGN) Page 40 40 42 48 2.0 2.0 , -268 ISOPLUS247TM (IXGT) (IXGR) TO-264 (IXGK) miniBLOC (IXGN) Page 60 75 1.7 1.7 3.5 3.5 IXGP 12N100U1 IXGA , -247 (IXGH) PLUS247 (IXGX) TO-268 ISOPLUS247TM (IXGT) (IXGR) TO-264 (IXGK) miniBLOC (IXGN) Page 75


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PDF O-220 O-263 O-247 PLUS247 O-268 ISOPLUS247TM O-264 20N30 28N30 30N30 12n60c 60n60 igbt diode b242 ixgk50n60bu1 50n60bd1 b2211 120n60 60N60 b2-111
IXAN0060

Abstract: series connection of mosfet ISOPLUS247 calculation of IGBT snubber dt300
Text: temperature. Combining these diodes with the latest package development of IXYS, called ISOPLUS247TM , it is possible to achieve acceptable junction temperatures even at high switching frequencies. ISOPLUS247TM is an , "R" stands for the ISOPLUS247TM package. DSEP 30-06B finally is again a single chip device with , Remarks TO-220 ISOPLUS247TM TO-247 TO-220 single chip 3 chips in series, isolated single chip , 0.99 2.17 15 10 19 14 tA [ns] 37 28 47 34 tB [ns] 43 11 20 2 ISOPLUS247TM


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PDF IXAN0060 IXAN0060 series connection of mosfet ISOPLUS247 calculation of IGBT snubber dt300
2008 - 20N120D1

Abstract: IC IGBT 20N120 20n120 FII30-12E ISOPLUS247
Text: IXER 20N120 IXER 20N120D1 NPT3 IGBT IC25 = 36A VCES =1200V VCE(sat)typ= 2.4V in ISOPLUS247TM C ISOPLUS247TM C G G G C E IXER 20N120 Isolated Backside E E IXER 20N120D1 G = Gate C = Collector E = Emitter Features IGBT Symbol Conditions , -low operating forward voltage -low leakage current · ISOPLUS247TM package -isolated back surface , shorted pins and mounting tab in the case Weight typ. max. 30 pF 6 g ISOPLUS247TM


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PDF 20N120 20N120D1 ISOPLUS247TM 20080118a 20N120D1 IC IGBT 20N120 20n120 FII30-12E ISOPLUS247
2008 - 20N120D1

Abstract: 20N120D 20N120 IGBT 20N120 FII30-12E ISOPLUS247 IXER20N120D1 IC IGBT 20N120
Text: IXER 20N120 IXER 20N120D1 NPT3 IGBT IC25 = 36A VCES =1200V VCE(sat)typ= 2.4V in ISOPLUS247TM C ISOPLUS247TM C G G G C E IXER 20N120 Isolated Backside E E IXER 20N120D1 G = Gate C = Collector E = Emitter Features IGBT Symbol Conditions , -low operating forward voltage -low leakage current · ISOPLUS247TM package -isolated back surface , ISOPLUS247TM Outline Die konvexe Form des Substrates ist typ. < 0.04 mm über der Kunststoff-f oberfläche


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PDF 20N120 20N120D1 ISOPLUS247TM 20080118a 20N120D1 20N120D 20N120 IGBT 20N120 FII30-12E ISOPLUS247 IXER20N120D1 IC IGBT 20N120
2006 - Not Available

Abstract: No abstract text available
Text: IXKR 40N60C COOLMOS® * Power MOSFET in ISOPLUS247TM Package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base G VDSS 600 V ID25 38 A RDS(on) 70 m D ISOPLUS 247TM E153432 G D Preliminary data S S Isolated base S = Source G = Gate D = Drain MOSFET Symbol VDSS VGS ID25 ID90 dv/dt EAS EAR TC = 25°C TC = 90°C VDS < VDSS , ISOPLUS247TM OUTLINE Symbol Cp RthCH Weight Conditions coupling capacity between shorted pins and


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PDF 40N60C ISOPLUS247TM 247TM E153432 ISOPLUS247 O-247
calculation of IGBT snubber

Abstract: DSEP ISOPLUS247 dt300
Text: with the latest package development of IXYS, called ISOPLUS247TM , it is possible to achieve acceptable junction temperatures even at high switching frequencies. ISOPLUS247TM is an isolated, discrete housing in , corresponds to the LightspeedTM IGBT series of IXYS, while "R" stands for the ISOPLUS247TM package. DSEP , , series-connected diode is listed last. Package Remarks TO-220 ISOPLUS247TM TO-247 TO-220 single chip , ISOPLUS247TM also allows an interesting method for decreased dynamic parameters: series connection of diodes


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2009 - 45-16AR

Abstract: Phase-leg Rectifier Diode E72873 ISOPLUS247 4516ar
Text: DSP 45-16AR VRRM = 1600 V IF(RMS) = 2x70 A IF(AV)M = 2x45 A Phase-leg Rectifier Diode VRSM VRRM V 1600 2 3 ISOPLUS247TM V 1700 1 Type 1 2 DSP 45-16AR TAB 3 1 = Cathode, 2 = Anode/Cathode, 3 = Anode Symbol Conditions Maximum Ratings IF(RMS) IF(AV)M TVJ = TVJM TC = 100°C; 180° sine IFSM TVJ = 45°C; Features / Advantages · Planar , dimensions © 2009 IXYS All rights reserved 20090528b 1-2 DSP 45-16AR ISOPLUS247TM The convex


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PDF 45-16AR ISOPLUS247TM 1090e E72873 20090528b O-247 45-16AR Phase-leg Rectifier Diode E72873 ISOPLUS247 4516ar
2000 - C1162

Abstract: C1280 120N20 26n60 80N06 C1328 60N25 C1146 C1158 C1104
Text: TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM TO-204 (IXFR) (IXFM) TO-268 (IXFT) TO-264 (IXFK , 80 RDS(on) TC = 25 °C W 0.028 0.028 0.028 TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM TO , 35 44 RDS(on) TC = 25 °C W 0.16 0.15 0.12 TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM TO , 1.05 0.75 0.7 0.725 0.5 0.5 0.39 0.39 TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM TO-204 (IXFM


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PDF O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1162 C1280 120N20 26n60 C1328 60N25 C1146 C1158 C1104
2000 - C1146

Abstract: C1162 C1278 C1106 C1104 ixfh 60N60 c1238 ixfn 26n60 C1156 C1142
Text: TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM TO-204 (IXFR) (IXFM) TO-268 (IXFT) TO-264 (IXFK , 80 RDS(on) TC = 25 °C 0.028 0.028 0.028 TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM TO , 0.12 TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM TO-204 (IXFM) (IXFR) TO-268 (IXFT) TO , ) ISOPLUS247TM TO-204 (IXFM) (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) Page IXFH 20N80


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PDF O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1146 C1162 C1278 C1106 C1104 ixfh 60N60 c1238 ixfn 26n60 C1156 C1142
2009 - Not Available

Abstract: No abstract text available
Text: Advance Technical Information High Voltage IGBT with Diode VCES = 1600V IC110 = 36A VCE(sat) ≤ 2.30V IXGR50N160H1 ( Electrically Isolated Tab) ISOPLUS247TM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 , 50A, VCE = 10V, Note 2 18 ISOPLUS247TM (IXGR) Outline 30 S 3020 pF 257 pF


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PDF IC110 IXGR50N160H1 ISOPLUS247TM 338B2
1999 - IXAN0031

Abstract: ISOPLUS247 D-68623 IXFR55N50 IXFX55N50 SIL-PAD to-247
Text: IXAN0031 New ISOPLUS247TM Power Package Features 2500V Internal Isolation Revolutionary Approach Improves Thermal Conductance and Reliability pability because the thermal expansion coefficient IXYS Corporation has introduced a new, isoof the silicon die matches that of the DCB; lated plastic encapsulated package for all types of 6. Small chip-to-heatsink stray capacitance for discrete power , .The DCB substrate can be etched like a PC to heatsinks. The new ISOPLUS247TM has an inboard allowing for


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PDF IXAN0031 ISOPLUS247TM O-247, 6RIWIDFH70 ISOPLUS247 IXFR55N50 IXFX55N50 D-68623 IXAN0031 ISOPLUS247 SIL-PAD to-247
2008 - 25N80C

Abstract: "VDSS 800V" mosfet ISOPLUS247 25n80
Text: IXKR 25N80C Advanced Technical Information CoolMOSTM 1) Power MOSFET ID25 = 25A VDSS =800V RDS(on)=125mW in ISOPLUS247TM Package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base ISOPLUS 247TM D G E153432 G D S S G = Gate, D = Drain, S = Source Features MOSFET Symbol Conditions VDSS Maximum Ratings TVJ , density 125 VGS = 10 V; ID = ID90 VGS(th) · ISOPLUS247TM package with DCB Base 180 24 92


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PDF 25N80C 125mW ISOPLUS247TM 247TM E153432 20080526a 25N80C "VDSS 800V" mosfet ISOPLUS247 25n80
diode u2 40

Abstract: 48 H diode DIODE U2 70 IXSH24N60AU1 IXSN35N120AU1 diode u2 34 h 48 diode IXSX35N120AU1 IXSN35N100U1 ixsn80n60
Text: Discrete IGBT with Fast Diode IGBT/Diode Combi-Pack S series with SCSOA capability Vcss *q25) u ^ a H ig h s tQ B T s=su^ TO-264 (K) min V A V CE(SAT) max V V TO-247(H) TO-268AA (T) SOT-227B (N> typ ns PLUS247TM (X) ISOPLUS247TM (R) N eiV Case style * Case style Case style Case style LOW SATURATION VOLTAGE TYPES 600 48 50 90 2.0 2.5 2.5 3.5 170 400 400 1000 IXSH24N60BD1 IXSH30N60U1 * IXSN62N60U1 IXSN35N100U1* 1000 34 HIGH SPEED


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PDF O-264 O-247 O-268AA OT-227B PLUS247TM ISOPLUS247TM IXSH24N60BD1 IXSH30N60U1 IXSN62N60U1 IXSN35N100U1* diode u2 40 48 H diode DIODE U2 70 IXSH24N60AU1 IXSN35N120AU1 diode u2 34 h 48 diode IXSX35N120AU1 IXSN35N100U1 ixsn80n60
2009 - IXGR50N160H1

Abstract: No abstract text available
Text: Advance Technical Information High Voltage IGBT with Diode IXGR50N160H1 VCES = 1600V IC110 = 36A VCE(sat) 2.30V ( Electrically Isolated Tab) ISOPLUS247TM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1600 V VCGR TJ = 25°C to 150°C, RGE = 1M 1600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C, Lead RMS , ISOPLUS247TM (IXGR) Outline 30 S 3020 pF 257 pF Cres 50 pF Qg 137 nC 24


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PDF IXGR50N160H1 IC110 ISOPLUS247TM 338B2 IXGR50N160H1
2x31-06c

Abstract: 19-06AS DSE 8-06A diode DSDI 12 DSEI 120-12A DSEI 120-06A diode AA24
Text: 100 100 100 100 24 Fig. 7 ISOPLUS247TM DCB isolated package Weight = 5 g DSEI 2x30-06P DSEI 2x30-1 , 40 100 100 100 100 100 100 100 1000 1200 300 300 12 Fig. 7a ISOPLUS247TM DCB isolated


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PDF 6-06AS 8-06AS 2-06A 2-10A 2-12A 0-12A 1x31-06C 2x31-06P 2x31-1 2x31-06C 19-06AS DSE 8-06A diode DSDI 12 DSEI 120-12A DSEI 120-06A diode AA24
case style

Abstract: IXSH35N100A
Text: Discrete IGBT S series with SCSOA capability ji> 2.2 2.7 3.0 3.0 2.5 2.0 2.5 2.2 2.5 2.5 3.0 3.5 3.4 4.0 4.0 3.6 4.0 4.0 Vcss min V *C(2S) 8 TO-268AA (T) _ TO-264 (K) -^) A typ ns T O -2 4 7 (H )^ ^ ^ SOT-227B (N) PLUS247TM (X) ISOPLUS247TM (R) New Case style 6 Case style Case style Case style LOW SATl JRATION l/OLTA<3E TYPES 600 1000 1200 48 75 75 75 500 1000 1000 400 IXSH24N60 IXSH45N100 IXSH45N120* IXSH45N120B IXST45N120B HIGH S 3EED


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PDF O-268AA O-264 OT-227B PLUS247TM ISOPLUS247TM IXSH24N60 IXSH45N100 IXSH45N120* IXSH45N120B IXST45N120B case style IXSH35N100A
2000 - Not Available

Abstract: No abstract text available
Text: Low VCE(sat) IGBT with Diode IXGR 60N60U1 ISOPLUS247TM VCES IC25 VCE(sat) = = = 600 V 75 A 1.7 V (Electrically Isolated Back Surface) Preliminary data Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW 600 600 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 IC100 ICM TC = , 150 150 -55.+ 150 °C °C °C 300 °C 2500 V 5 g ISOPLUS247TM SSOA


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PDF 60N60U1 ISOPLUS247TM IC100
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