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2006 - 12n80

Abstract: 12n80p
Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET ISOPLUS220TM IXFC 12N80P VDSS ID25 RDS(on) trr (Electrically Isolated Back Surface) = 800 V = 7 A 0.93 m 250 ns N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions , 800 800 V V ± 30 ± 40 Continuous Transient V V ISOPLUS220TM (IXFC) E153432 , ISOPLUS220TM (IXFC) Outline pF VGS = 0 V, VDS = 25 V, f = 1 MHz Crss td(on) 21 ns tr VGS


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PDF ISOPLUS220TM 12N80P E153432 12n80 12n80p
2001 - back diode

Abstract: diode snubber
Text: DSEA 59-06BC DSEC 59-06BC = 2x21 A = 600 V = 35 ns ADVANCE TECHNICAL INFORMATION HiPerFREDTM Epitaxial Diode IFAV VRRM trr ISOPLUS220TM Electrically Isolated Back Surface DSEA VRSM VRRM V V 600 600 Type 1 DSEC 2 ISOPLUS220TM 3 1 DSEA 59-06BC , Epitaxial Diode IFAV VRRM trr ISOPLUS220TM Electrically Isolated Back Surface DSEA VRSM VRRM V V 600 600 Type 1 DSEC 2 ISOPLUS220TM 3 1 DSEA 59-06BC DSEC 59-06BC


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PDF 59-06BC ISOPLUS220TM ISOPLUS220 back diode diode snubber
2006 - Not Available

Abstract: No abstract text available
Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET ISOPLUS220TM IXFC 12N80P VDSS ID25 RDS(on) trr (Electrically Isolated Back Surface) = 800 V = 7 A Ω ≤ 0.93 mΩ ≤ 250 ns N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test , Maximum Ratings 800 800 V V ± 30 ± 40 Continuous Transient V V ISOPLUS220TM (IXFC , Coss S 2800 pF 210 pF 19 Ciss 18 ISOPLUS220TM (IXFC) Outline pF VGS =


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PDF ISOPLUS220TM 12N80P E153432 -55ved
2003 - DGS20-025A

Abstract: 20-05CC
Text: DGSS 20-05CC ADVANCE TECHNICAL INFORMATION IDC = 13 A VRRM = 500 V CJUNCTION = 26 pF Gallium Arsenide Schottky Diode ISOPLUS220TM Electrically Isolated Back Surface VRRM VRRM V V 500 250 Type ISOPLUS220TM 1 DGSS 20-05CC 1 2 2 3 3 Isolated back surface * Symbol Conditions Maximum Ratings IDC IFAV TC = 25°C TC = 90°C; 50% Duty cycle; Square wave 13 8.5 A A IFSM TVJ = 25°C; tp = 10 ms, sine 50 A -55.+175


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PDF 20-05CC ISOPLUS220TM DGS20-025A DS98869A ISOPLUS220 20-05CC
2006 - Not Available

Abstract: No abstract text available
Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET ISOPLUS220TM IXFC 16N80P VDSS ID25 RDS(on) trr (Electrically Isolated Back Surface) = 800 V = 9 A Ω ≤ 650 mΩ ≤ 250 ns N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test , 2 ISOPLUS220TM (IXFC) E153432 V V g dv/dt Maximum Ratings TJ ≤150° C, RG = 5 , Coss S 4600 pF 330 pF 23 Ciss 16 ISOPLUS220TM (IXFC) Outline pF VGS =


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PDF ISOPLUS220TM 16N80P
1262-33

Abstract: IXTP44N10T IXTP98N075T IXTQ130N10T ixtp76n075 IXTA60N10T IXTH200N10T IXTP64N055T IXTP152N085T IXTP240N055T
Text: ) IXTH220N055T with SIL-PAD 2000TM 0.42 C/W IXTC220N055T ( ISOPLUS220TM with Internal DCB Isolation , ISOPLUS i5-Pak Type A TO-263 (D2-Pak) Type A .7 7-Lead D2-Pak Type C ISOPLUS220TM Type F , packages include the ISOPLUS220TM , ISOPLUS i4-PakTM and ISOPLUS i5-PakTM. FEATURES: · · · · · , UL recognized isolated ISOPLUSTM packages TO-247 PLUS220 ISOPLUS220TM PLUS220SMD , ) IXTH220N055T with SIL-PAD 2000TM 0.42 C/W IXTC220N055T ( ISOPLUS220TM with Internal DCB Isolation


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PDF 5V-100V) O-247 PLUS220 ISOPLUS220TM PLUS220SMD O-252 O-220 O-263 1262-33 IXTP44N10T IXTP98N075T IXTQ130N10T ixtp76n075 IXTA60N10T IXTH200N10T IXTP64N055T IXTP152N085T IXTP240N055T
2000 - Not Available

Abstract: No abstract text available
Text: ADVANCE TECHNICAL INFORMATION DSEA16-06AC HiPerDynFREDTM Epitaxial Diode ISOPLUS220TM Electrically Isolated Back Surface IFAV = 2x10 A VRRM = 600 V trr = 35 ns VRSM V 600 VRRM V 600 Type 1 2 3 ISOPLUS220TM 1 2 3 Isolated back surface * * Patent pending DSEA16-06AC Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot VISOL FC Weight Conditions TC = 85°C; rectangular, d = 0.5 TVJ = 45°C; tp = 10 ms (50 Hz), sine TVJ = 25°C; non-repetitive IAS = 0.9 A; L = 180 µH VA = 1.5


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PDF DSEA16-06AC ISOPLUS220TM ISOPLUS220
2003 - Not Available

Abstract: No abstract text available
Text: DSI 30 Rectifier Diode ISOPLUS220TM Electrically Isolated Back Surface A C VRRM = 800 - 1200 V IF(AV)M = 30 A ISOPLUS220TM VRSM V 900 1300 VRRM V 800 1200 Type C A Isolated back surface * DSI 30-08AC DSI 30-12AC Preliminary Data Sheet Symbol IFRMS IFAV IFSM Conditions TC = 95°C; 180O sine (RMS current limited) TVJ = 45°C; VR = 0 V; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 60 30 200 210 175 185 200 185 155 145 -55.+150 150 -55.+150 1.6 mm


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PDF ISOPLUS220TM 30-08AC 30-12AC ISOPLUS220 8791A
2000 - DSEC29-06AC

Abstract: No abstract text available
Text: DSEC29-06AC ADVANCE TECHNICAL INFORMATION IFAV = 2x15 A VRRM = 600 V trr = 35 ns HiPerFREDTM Epitaxial Diode ISOPLUS220TM Electrically Isolated Back Surface VRSM VRRM V V 600 600 Type ISOPLUS220TM 1 DSEC29-06AC 1 2 2 3 3 Isolated back surface * * Patent pending Symbol Conditions Maximum Ratings TC = 140°C; rectangular, d = 0.5 35 15 A A IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine 110 EAS TVJ = 25°C; non-repetitive


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PDF DSEC29-06AC ISOPLUS220TM ISOPLUS220 DSEC29-06AC
2005 - 6-06CC

Abstract: No abstract text available
Text: DGSS 6-06CC VRRM = 600 V (2x300V) IDC = 11 A CJunction = 4 pF Gallium Arsenide Schottky Rectifier Second generation ISOPLUS220TM Electrically Isolated Back Surface Preliminary Data Type Marking on product DGSS 6-06CC Circuit Package DGSS 6-06CC ISOPLUS220A 1 2 3 1 2 3 Features Symbol Conditions Maximum Ratings VRRM/RSM VRRM/RSM (between , peak due to short lifetime of minority carriers - soft turn off · low leakage current ISOPLUS220TM


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PDF 6-06CC 2x300V) ISOPLUS220TM ISOPLUS220A 6-06CC
2000 - Not Available

Abstract: No abstract text available
Text: ADVANCE TECHNICAL INFORMATION DSEC16-06AC HiPerDynFREDTM Epitaxial Diode ISOPLUS220TM Electrically Isolated Back Surface IFAV = 2x10 A VRRM = 600 V trr = 35 ns VRSM V 600 VRRM V 600 Type 1 2 3 ISOPLUS220TM 1 2 3 Isolated back surface * DSEC16-06AC Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot VISOL FC Weight Conditions TC = 85°C; rectangular, d = 0.5 TVJ = 45°C; tp = 10 ms (50 Hz), sine TVJ = 25°C; non-repetitive IAS = 0.9 A; L = 180 µH VA = 1.5·VR typ.; f = 10


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PDF DSEC16-06AC ISOPLUS220TM 250and ISOPLUS220
2000 - Not Available

Abstract: No abstract text available
Text: ADVANCE TECHNICAL INFORMATION DSEE8-06CC HiPerDynFREDTM Epitaxial Diode ISOPLUS220TM Electrically Isolated Back Surface IFAV = 10 A VRRM = 600 V trr = 25 ns VRRM V 600 VRRM V 300 Type ISOPLUS220TM 1 1 2 3 DSEE8-06CC 2 3 Isolated back surface * Symbol IFRMS IFAVM IFRM IFSM EAS IAR TVJ TVJM Tstg Ptot VISOL FC Weight Conditions TC = 110°C; rectangular, d = 0.5 tP < 10 µs; rep. rating, pulse width limited by TVJM TVJ = 45°C; tp = 10 ms (50 Hz), sine TVJ = 25°C; non-repetitive IAS =


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PDF DSEE8-06CC ISOPLUS220TM ISOPLUS220
2003 - Not Available

Abstract: No abstract text available
Text: ADVANCE TECHNICAL INFORMATION DSEE29-12CC HiPerDynFREDTM Epitaxial Diode ISOPLUS220TM Electrically Isolated Back Surface IFAV = 30 A VRRM = 1200 Vc trr = 30 ns VRRMc V 1200 VRRM V 600 Type ISOPLUS220TM DSEE29-12CC 1 2 3 G Symbol IFRMS IFAVM c IFSM EAS IAR TVJ TVJM Tstg TL Ptot VISOL FC Weight Conditions TC = 90°C; rectangular, d = 0.5 TVJ = 45°C; tp = 10 ms (50 Hz), sine TVJ = 25°C; non-repetitive IAS = 1.3 A; L = 180 µH VA = 1.5·VR typ.; f = 10 kHz; repetitive


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PDF DSEE29-12CC ISOPLUS220TM DS98778 ISOPLUS220HV 728B1 065B1 123B1
2004 - Not Available

Abstract: No abstract text available
Text: DGSS 10-06CC VRRM = 600 V (2x300V) IDC = 18 A CJunction = 10.7 pF Gallium Arsenide Schottky Rectifier Second generation ISOPLUS220TM Electrically Isolated Back Surface Preliminary Data Type Marking on product DGSS 10-06CC Circuit Package DGSS 10-06CC ISOPLUS220A 1 2 3 1 2 3 Features Symbol Conditions Maximum Ratings VRRM/RSM VRRM/RSM (between , recovery current peak due to short lifetime of minority carriers - soft turn off ISOPLUS220TM Package


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PDF 10-06CC 2x300V) ISOPLUS220TM ISOPLUS220A DGSS10-06CCC
2003 - Not Available

Abstract: No abstract text available
Text: Power MOSFET ISOPLUS220TM Electrically Isolated Back Surface Low RDS(on), High Voltage, CoolMOSTM Superjunction MOSFET Preliminary Data Sheet Symbol VDSS VGS ID25 ID90 ID(RMS) EAS EAR dv/dt PD TJ TJM Tstg TL VISOL FC Weight 1.6 mm (0.062 in.) from case for 10 s RMS leads-to-tab, 50/60 Hz, t = 1 minute Mounting force Test Conditions TJ = 25°C to 150°C Continuous TC = 25°C TC = 90°C Package lead current limit Io Io , °C V~ ISOPLUS220TM G D S Isolated back surface* D = Drain, G = Gate, S = Source


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PDF ISOPLUS220TM 25N80C ISOPLUS220LV 728B1 065B1 123B1
2006 - 10n80

Abstract: 10n80p IXFC10N80P
Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET ISOPLUS220TM (Electrically Isolated Back Surface) IXFC 10N80P VDSS ID25 RDS(on) trr = 800 V = 5 A 1.2 m 250 ns N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR , Fast intrinsic Rectifier G = Gate S = Source G D S Isolated back surface ISOPLUS220TM (IXFC , 3. ISOPLUS220TM (IXFC) Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC


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PDF ISOPLUS220TM 10N80P 10n80 10n80p IXFC10N80P
2001 - 2005C

Abstract: transistor 05c DGS20-025A 200-5C
Text: DGSS 20-05C ADVANCE TECHNICAL INFORMATION IDC = 13 A VRRM = 500 V CJUNCTION = 26 pF Gallium Arsenide Schottky Diode ISOPLUS220TM Electrically Isolated Back Surface VRRMQ VRRM V 500 250 Type ISOPLUS220TM V DGSS 20-025C 1 2 1 3 2 3 Isolated back surface * Symbol Conditions Maximum Ratings IDC IFAV TC = 25°C TC = 90°C; 50% Duty cycle; Square wave 13 8.5 A A IFSM TVJ = 25°C; tp = 10 ms, sine 50 A -55.+175


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PDF 20-05C ISOPLUS220TM 20-025C DGS20-025A ISOPLUS220 2005C transistor 05c 200-5C
2002 - Not Available

Abstract: No abstract text available
Text: ADVANCE TECHNICAL INFORMATION DSEE 6-06CC HiPerDynFREDTM Epitaxial Diode ISOPLUS220TM Electrically Isolated Back Surface IFAV = 6 A VRRM = 600 V trr = 20 ns VRRMQ V 600 VRRM V 300 Type ISOPLUS220TM 1 DSEE 6-06CC 1 2 3 2 3 Isolated back surface * Symbol IFRMS IFAVM EAS IAR TVJ TVJM Tstg Ptot VISOL FC Weight Conditions TC = 150°C; rectangular, d = 0.5 TVJ = 25°C; non-repetitive IAS = 0.8 A; L = 180 µH VA = 1.5·VR typ.; f = 10 kHz; repetitive Maximum Ratings 20 6 0.1 0.1


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PDF 6-06CC ISOPLUS220TM ISOPLUS220
2006 - 16N80

Abstract: IXFC16N80P
Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET ISOPLUS220TM IXFC 16N80P VDSS ID25 RDS(on) trr (Electrically Isolated Back Surface) = 800 V = 9 A 650 m 250 ns N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions , °C V~ 11.65/2.5.15 N/lb 2 g ISOPLUS220TM (IXFC) E153432 TJ TJM Tstg TL , , pulse test 9 S 4600 pF 330 pF 23 Ciss Coss 16 ISOPLUS220TM (IXFC) Outline


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PDF ISOPLUS220TM 16N80P 16N80 IXFC16N80P
2002 - DGS10-025A

Abstract: No abstract text available
Text: DGSS 10-06CC ADVANCE TECHNICAL INFORMATION Gallium Arsenide Schottky Diode IDC = 9 A VRRM = 600 V CJunction = 18 pF ISOPLUS220TM Electrically Isolated Back Surface VRRMQ V VRRM Type ISOPLUS220TM V 600 300 1 DGSS 10-06CC 1 2 2 3 3 Isolated back surface * Symbol IDC IFAV Conditions TC = 25°C TC = 90°C; 50% Duty Cycle; Square wave Maximum Ratings 9 A 6 A * Patent pending IFSM TVJ Tstg TVJ = 25°C; tp = 10 ms, sine 30


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PDF 10-06CC ISOPLUS220TM DGS10-025A 300us, ISOPLUS220
2005 - Not Available

Abstract: No abstract text available
Text: DGSS 6-06CC Gallium Arsenide Schottky Rectifier Second generation ISOPLUS220TM Electrically Isolated Back Surface Preliminary Data VRRM = 600 V (2x300V) IDC = 11 A CJunction = 4 pF Type DGSS 6-06CC Marking on product DGSS 6-06CC Circuit Package ISOPLUS220A 1 2 3 1 2 3 Diode Symbol VRRM/RSM VRRM/RSM IFAV IFAV IFSM Ptot Conditions (between terminal 1 and 3) Features , due to short lifetime of minority carriers - soft turn off ISOPLUS220TM Package: · isolated back


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PDF 6-06CC ISOPLUS220TM 2x300V) ISOPLUS220A
2001 - DGS10-025A

Abstract: transistor 05c
Text: DGSS 10-05C ADVANCE TECHNICAL INFORMATION IDC = 9A VRRM = 500 V CJUNCTION = 18 pF Gallium Arsenide Schottky Diode ISOPLUS220TM Electrically Isolated Back Surface VRRMQ VRRM V 500 250 Type ISOPLUS220TM V DGSS 10-025C 1 2 1 3 2 3 Isolated back surface * Symbol Conditions Maximum Ratings IDC IFAV TC = 25°C TC = 90°C; 50% Duty cycle; Square wave 9 6 A A IFSM TVJ = 25°C; tp = 10 ms, sine 30 A -55.+175 -55.+150


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PDF 10-05C ISOPLUS220TM 10-025C DGS10-025A ISOPLUS220 transistor 05c
2001 - Not Available

Abstract: No abstract text available
Text: DSP 8 ADVANCE TECHNICAL INFORMATION Phase-leg Rectifier Diode VRRM = 800/1200 V IF(AV)M = 2 x 11 A ISOPLUS220TM Electrically Isolated Back Surface ISOPLUS220TM VRSM VRRM V V 900 1300 800 1200 1 Type 1 DSP 8-08AC DSP 8-12AC 2 2 3 Isolated back surface * 3 * Patent pending Symbol Test Conditions Maximum Ratings IFRMS IF(AV)M TVJ = TVJM Tcase = 100°C; 180° sine 30 2 x 11 A A IFSM TVJ = 45°C; (50 Hz), sine (60 Hz), sine


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PDF ISOPLUS220TM 8-08AC 8-12AC
2005 - Not Available

Abstract: No abstract text available
Text: DGSS 20-06CC Gallium Arsenide Schottky Rectifier Second generation ISOPLUS220TM Electrically Isolated Back Surface Preliminary Data VRRM = 600 V (2x300V) IDC = 38 A CJunction = 16 pF Type DGSS 20-06CC Marking on product DGSS 20-06CC Circuit Package ISOPLUS220A 1 2 3 1 2 3 Diode Symbol VRRM/RSM VRRM/RSM IFAV IFAV IFSM Ptot Conditions (between terminal 1 and 3) Features , ISOPLUS220TM Package: · isolated back surface · low coupling capacy between pins and heatsink · enlarged


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PDF 20-06CC ISOPLUS220TM 2x300V) ISOPLUS220A
2006 - Not Available

Abstract: No abstract text available
Text: PolarHVTM HiPerFET Power MOSFET ISOPLUS220TM VDSS = 600 V ID25 = 12 A Ω RDS(on) ≤ 360 mΩ trr ≤ 200 ns IXFC 22N60P (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ , nA 25 250 µA µA 360 ISOPLUS220TM (IXFC) E153432 G D S G = Gate S = Source , . Max. gfs VDS = 20 V; ID = IT , Note 1 13 Coss S 4000 Ciss 20 ISOPLUS220TM


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PDF ISOPLUS220TM 22N60P 02-17-06-B
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