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LT1102 Linear Technology IC INSTRUMENTATION AMPLIFIER, 500 uV OFFSET-MAX, Instrumentation Amplifier
LT1113IJ8 Linear Technology IC DUAL OP-AMP, 500 uV OFFSET-MAX, CDIP8, HERMETIC SEALED, CERDIP-8, Operational Amplifier
LM308AN8#PBF Linear Technology IC OP-AMP, 500 uV OFFSET-MAX, PDIP8, PLASTIC, DIP-8, Operational Amplifier
LM308AN8 Linear Technology IC OP-AMP, 500 uV OFFSET-MAX, PDIP8, PLASTIC, DIP-8, Operational Amplifier
LT1114IJ8 Linear Technology IC QUAD OP-AMP, 500 uV OFFSET-MAX, CDIP8, HERMETIC SEALED, CERDIP-8, Operational Amplifier
LT1215ACJ8 Linear Technology IC DUAL OP-AMP, 500 uV OFFSET-MAX, 23 MHz BAND WIDTH, CDIP8, Operational Amplifier
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ISI-500-112A Mean Well Sager - - -
ISI-500-124A Mean Well Sager - - -
ISI-500-148A Mean Well Sager - - -
ISI-500-212B Mean Well Sager - - -
ISI-500-224B Mean Well Sager - - -
ISI-500-248A Mean Well Sager - - -
ISI-500-248B Mean Well Sager - - -

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ISI-500 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2005 - TN-46-11

Abstract: TN4611 sdram ddr
Text: 1,875 -790 - 500 585 1,875 -790 - 500 585 ps ps ps ps 266 MHz = 3.75ns , CIN 1,875 -790 - 500 -105 -165 -200 -20 -30 -50 15 1,875 -790 - 500 -105


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PDF TN-46-11: 09005aef812507c7 TN4611 N-46-11: TN-46-11 sdram ddr
1000W inverter circuit design

Abstract: Solar mppt circuit design 10A MPPT Charger circuit 10A MPPT Charger inverter 500w MPPT 12v battery 24v Solar panel 1000w inverter circuit modified sine wave solar panel 500w sine wave inverter 500w circuit 24V lead acid battery charger circuit
Text: Modified Sine Wave DC-AC Inverter with MPPT Solar Charger Features : ISI-500 series High , .All parameters not specified above are measured at rated load, 25 of ambient temperature. File Name: ISI-500-SPEC , +MPPT solar charger O/P Wattage:500W 500 112 A 12:12VDC Bat. Voltage: 24:24VDC 48:48VDC Output: 1:110VAC 2:230VAC ISI-500 A :TYPE B :TYPE C :TYPE D :TYPE E :TYPE U :TYPE series A OUTLET B OUTLET , : ISI-500-SPEC 2011-09-22 -


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PDF ISI-500 100/115/120VAC 200/220/240VAC ISI-500-112 ISI-500-124 ISI-500-148 ISI-500-212 ISI-500-224 ISI-500-248 50ssignment 1000W inverter circuit design Solar mppt circuit design 10A MPPT Charger circuit 10A MPPT Charger inverter 500w MPPT 12v battery 24v Solar panel 1000w inverter circuit modified sine wave solar panel 500w sine wave inverter 500w circuit 24V lead acid battery charger circuit
IDCT

Abstract: Adders H261 H263 H264
Text: ISI-500 is a high performance IDCT synthesizable block that meets the video standards requirements using commercially available process technology. Architecture · The ISI-500 architecture , - ISI-500 PRODUCT BRIEF Key Features · The architecture implements a two dimensional


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PDF ISI-500 ISI-500 IDCT Adders H261 H263 H264
2014 - RA-362MS

Abstract: No abstract text available
Text: -452M-V7 RA-242MS-V7 RA-302MS-V7 RA-362MS-V7 RA-402MS-V7 RA-452MS-V7 500 (400∼600) 600 (480∼720) 1,000 (800∼1,200) 1, 500 (1,200∼1,800) ※5 2,400 (1,920∼2,880) ※5 3,000 (2,400∼3,600) ※5 3,600 (2,880∼4,320) ※5 4,000 (3,200∼4,800) ※5 4, 500 , (2,880∼4,320) ※5 4,000 (3,200∼4,800) ※5 4, 500 (3,600∼5,400ï , ›ž 3, 500 耐圧試験 ̶ ̶ ̶ ̶ AC1,250V 3s AC1,500V 60s AC1,800V 3s AC2,000V 60s AC2


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PDF UL1449 EN60065 EN60950-1 IEC61643-1 EN61643-11 E322107 LR105073 RA-362MS
090AO

Abstract: AD 8723
Text: to 1.75 fc -1 - 500 -2 -3 v/v dB FBA TGDO Frequency Boost Accuracy Group Delay Variation Without Boost +1 + 500 +2 +3 dB ps % % 7-4 1191 - rev. SSI 32F8000 Low-Power Programmable , 27 MHz, ISI = ISO 1.0 2.0 60 3.6 2.2 5.8 2.9 = CONDITIONS MIN - 500 -2 ISO -3 1.0 1.5 1.0 3.0 NOM MAX + 500 +2 +3 UNITS ps % % THD = 1% max, F = 0.67 fc THD = 1.5% max, F = 0.67 fc THD = , (714) 573-6914 ©1990 Silicon Systems, Inc. Patent Pending 497,863 / 500 , 778 / 710,512 7-10


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PDF 32F8000 32F8000 090AO AD 8723
Not Available

Abstract: No abstract text available
Text: 0.2 /c to /c -1 +1 dB - 500 + 500 ps f c = 9 MHz - 27 MHz F = 0.2 f c to fc , ISI , - 500 + 500 ps f c = 9 MHz - 27 MHz F = 0.2 f c to fc , ISI = ISO -2 +2 % f c = 9 , , FAX (714) 573-6914 ©1990Silicon Systems, Inc. Patent Pending 497, 863 / 500 , 778 / 710, 512 3*10


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PDF 32F8000 32F8000 1990Silicon 1191-rev.
46rj

Abstract: No abstract text available
Text: -JMCS-G-B-TF 50P3.0-JMCS-G-B-TF ― 2, 500 Without bosses With bosses Q'ty / reel 5.0 14P5.0 , €• 40P5.0-JMCS-G-B-TF 60P5.0-JMCS-G-B-TF 1, 500 With bosses 20 50 34 50 64 Q'ty / reel 7.0 , €• ― 1, 500 5.5 ― 20P5.5-JMCS-G-TF ― ― ― 60P5.5-JMCS-G-TF ― 20P5.5 , -JMCS-G-B-TF 500 10.0 20P10.0-JMCS-G-TF ― ― 20P10.0-JMCS-G-B-TF ― 40P10.0-JMCS-G-B-TF ― ― 500 , -JMCS-G-B-TF 600 8.5 ― ― 34P8.5-JMCS-G-B-TF ― ― 500 A B C D 4.5 12.0 8.0 12.0


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PDF value/50m testing/100m 60RF-JMCS-G-1-TF 60RF-JMCS-G-1B-TF 64RF-JMCS-G-1B-TF 44RF-JMCS-G-1B-TF 50RF-JMCS-G-1-TF UL94V-0 46rj
MIPI csi-2 receivers

Abstract: No abstract text available
Text: switching from one to another. Presets: SerialXpress supports any emerging standard data rate from 500 Kb , €“ Binary (1, 0, z) and Symbol (D, K, z words)*2 Binary, Hex, Symbol 500 Kb/s to 8 Gb/s (direct synthesis , ,000 ppm 0 to 500 kHz 0 to 100 ppm 0 to 0.5 VRMS with far end or near end 0 to 20 dB ON/OFF Pre , file, Clock, Same as Victim 0 to 5 500 Kb/s to 12 Gb/s Same as Victim, Opposite to Victim ON/OFF


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PDF SDX100, 10GbE, 6W-21435-6 MIPI csi-2 receivers
pSOS

Abstract: psos prepc ip board samsung Samsung S ARM
Text: (Basic Standard Package) to US $20, 500 (Full Pro Package)1). The user who purchases the pRISM+ will be


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PDF 32-bit pSOS psos prepc ip board samsung Samsung S ARM
nana

Abstract: HVD25 HVD12 HVD10 HVD08 HVC25 HVC20 HVC15 HVC12 HVD30
Text: HVHC35 35,000 200 54 4.00 0.51 HVHC40 40,000 200 60 5.00 0.51 HVHC45 45.000 200 70 6.25 0.51 yHVHCSO 50,000 200 76 6.25 0.51 j 500 mA High Voltage Silicon Rectifiers Peak Average Max. Fwd , and lo Length Htlght/Width Number (volts) (mA) Vf (volts) (inches) (inch*) Mix HV5 5,000 500 6 1.00 0.31 x 0.76 HV7.5 7, 500 500 S 1.63 0.31 x 0.76 HV10 10,000 500 12 2.00 0.31 x 0.76 HV12.5 12, 500 500 15 2.50 0.31 x 0.76 HV15 15,000 500 17 2.50 0.31 x 0.76 HV20 20,000 500 22 3.20


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PDF iDDa376 HVD08 HVC06 HVD10 HVD12 HVC12 nana HVD25 HVC25 HVC20 HVC15 HVD30
Not Available

Abstract: No abstract text available
Text: 1.25 1.50 2.00 2.50 3.00 3.75 4.00 5.00 8.25 8.25 ISI Part Num ber HV5 HV7.5 HV10 , Drop at 25C and lo Vf (volts) 5,000 7, 500 10,000 12, 500 15,000 20,000 25,000 30,000 500 500 500 500 500 500 500 500 8 S 12 15 17 1.00 1.83 2.00 2.50 2.50 22 28 34 3.20 4.50 4.50 500 e 1.25 0.31 X 0.76 8,000 500 12 1.75 0.31 X 0.76 HVHC10R 10,000 500 15 2.00 0.31 X 0.76 HVHC12 5fl 12, 500 500


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PDF 10G037Ã HVD08 HVD10 HVD12 HVD20 HVD25 HVD30 HVD35 HVD40 DO-201
H11AA1 and similar

Abstract: lh1262 lh1502 AB H11B1 optocoupler H11c LH1485
Text: at TSi VI/O= 500 V Document Number: 83872 Rev. A2, 16-Jun-03 www.vishay.com 45 VISHAY , °C) Derating with Higher Ambient Temp. Insulation Resistance at TSi VI/O= 500 V www.vishay.com 46 , 300 165 235 °C mA ISi PSi PSi -1.65 500 -3.33 -2 500 -3.33 -1.57 465 -3.1 , °C) Derating with Higher Ambient Temp. Insulation Resistance at TSi VI/O= 500 V Document Number: 83872 Rev , , TA = 25°C) Derating with Higher Ambient Temp. Insulation Resistance at TSi VI/O= 500 V Symbol


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PDF 16-Jun-03 H11AA1 and similar lh1262 lh1502 AB H11B1 optocoupler H11c LH1485
2001 - pc 890

Abstract: LH1546 optocoupler H11A
Text: Insulation Resistance at TSi VI/O= 500 V RIS >10 9 Document Number: 83713 Revision 17 , mA/K mW mW/K Insulation Resistance at TSi VI/O= 500 V RIS >10 9 Document Number , 500 -3.33 -2 500 -3.33 -1.57 465 -3.1 mA/K mW mW/K Insulation Resistance at TSi VI/O= 500 V RIS >10 9 >10 9 >10 9 Description Symbol System 8 LH1262 4)5 , -4.67 mA/K mW mW/K Insulation Resistance at TSi VI/O= 500 V RIS >10 9 >10 9 All


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PDF 17-August-01 pc 890 LH1546 optocoupler H11A
2005 - TN-46-11

Abstract: TN4611
Text: Transmitter skew Receiver skew Board skew budget Setup Hold Units 1,875 -790 - 500 585 1,875 -790 - 500 585 ps ps ps ps Comments 266 MHz period = 3.75ns half period Vendor data , 1,875 -790 - 500 -105 -165 -200 -20 -30 -50 15 1,875 -790 - 500 -105 -165 -200 -20


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PDF TN-46-11: 09005aef812507c7 TN4611 TN-46-11
1997 - apm 7113

Abstract: No abstract text available
Text: -002 (HBM) - 500 + 500 V According to AEC-Q100-011 (Charge Device Model) -100 +100 V , BRANCH_ACTIVE mode, Transmitter enabled 500 ns Max Units 6.17 Over Temperature Table 19. Over , Mbps tSCLK_High Clock high time 500 ns tSCLK_High Clock low time 500 ns


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PDF AS8223 AS8223 com/AS8223 apm 7113
mitsumi Vcm

Abstract: ic4558 mitsumi m55SP-2K IC-455 mitsumi Vcm 13 MM6564 MM6572 MM6561 MM6560 xf300
Text: 0.5 mV VIO ±1 IIO 5 200 nA IB 50 500 nA RIN 0.3 , VIO ±1 IIO 5 200 nA IB 50 500 nA RIN 0.3 3 M , 500 nA RIN 0.3 3 M VCM ±8 ±9 V AV RL2k, VO±7V 86 , 0.5 mV VIO ±1 IIO 5 200 nA IB 50 500 nA RIN 0.3 , VIO ±1 IIO 10 100 nA IB 200 500 nA RIN 100 260 k


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PDF MM6558 IC4558 MM6558 MM6559 MM6561 MM6572 MM6560 MM6564 MM6565 mitsumi Vcm ic4558 mitsumi m55SP-2K IC-455 mitsumi Vcm 13 MM6564 MM6572 MM6561 MM6560 xf300
R315M

Abstract: SON3024-8 TK62022F TK62022
Text: =25C IDD VIO MIN ­ -7 TYP 250 0 MAX 500 7 VIO/T ­ 10 ­ µV/°C IIO IIB


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PDF TK62022F GC3-J004A TK62022FCMOS SON3024-8 TK62022F5MHz 17mA19mA -100m -150m R315M SON3024-8 TK62022F TK62022
1n4448 itt

Abstract: Color code diode DO-35 diode ITT specification 150D 1N4448 diode 1N4448 D1N4448
Text: 25 °C 'fsm 500 mA Power Dissipation at Tamb = 25 °C case DO-35 Ptot 5001 ) mW Power Dissipation , tot mW 1000 900 800 700 600 500 400 300 200 100 0 1N4448 0 100 200 "C 'amb Dynamic


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PDF 1N4448 DO-35 DO-34 4baP711 DO-35) 1n4448 itt Color code diode DO-35 diode ITT specification 150D 1N4448 diode 1N4448 D1N4448
2013 - Si32171

Abstract: SI32176 Si32176-C-FM1 Si32172-C-FM1 Si32170-C-FM1 Si3217x-C si3217 Si32171-C-FM1 ProSLIC SI32171-C-GM
Text: Nom 0.85 0.25 5.00 BSC 3.40 0.50 BSC 7.00 BSC 5.40 1.70 3.20 0.40 0.10 - - - - 5.45 1.75 3.25 0.45


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PDF Si3217x-C Si3217x 42-pin Si32170/1/6/7 Si32172/3/5 Si32171 SI32176 Si32176-C-FM1 Si32172-C-FM1 Si32170-C-FM1 si3217 Si32171-C-FM1 ProSLIC SI32171-C-GM
2007 - DS90UR801

Abstract: TSSOP56 80000B AN-1084 DS90CR48x DS90CR213MTD DS90CR218AMTD DS90CR216AMTD DS90CR215MTD DS90CR214MTD
Text: , 122.88 MHz (CPRI) SCAN12100 100 250 500 1000 1500 2500 5000 10000 8b/10b


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PDF DS90CR2xxx DS90CR4xx DS90CR485/486 DS90CR481/482 DS90CR481/486 DS90CR485/6 DS90CR483/484 66MHz DS90CR481/482/483/484 DS90UR801 TSSOP56 80000B AN-1084 DS90CR48x DS90CR213MTD DS90CR218AMTD DS90CR216AMTD DS90CR215MTD DS90CR214MTD
coutant power supply

Abstract: Coutant 15V coutant 15v diagram Hitachi R-C 6800 CI047 coutant
Text: Frequency vs. Supply Voltage Characteristic 1,000 s •Í s s ? 500 Ua g o , / (LINEAR DEVICES) böE D Output Frequency vs. Ambient Temperature Characteristic 1.000 % ? £ 500


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PDF HA16802PS, HA16804PS, 6805PS/F HA16802, HA16804 HA16805 HA16802. HD16805F) 160kS coutant power supply Coutant 15V coutant 15v diagram Hitachi R-C 6800 CI047 coutant
TK10201

Abstract: No abstract text available
Text: ) 250 300 500 600 75 100 Iset(VSATU=1V) 1000 400 800 300 600 ISO/Iset 500 ISO (mA) 200 ISI (mA) Iset(VSATU=1V) 200 100 400 200 0 0 0 100 200 300 400 500 600 0 100 200 Iset (µA) 300 400 Iset (µA) 2 , (VSATL=1V) 1000 400 800 ISIMAX (mA) 500 ISOMAX (mA) 50 Ta (Cº) (VSATU


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PDF TK10201AM GC3-I009 10max 75max 25max 100mA 200mA TK10201
1998 - bosch lsh 25

Abstract: equivalents de SEG 731 package tray outline HC12(CPU12) Reference Manual MC68HC912D60CPV8 fprog 2 MC68HC912D60 U-344 eprom 731 zener diode C2f TRANSISTOR
Text: No file text available


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PDF MC68HC912D60TS/D MC68HC912D60 16-Bit MC68HC912D60 CPU12) 10-bit MSCAN12) bosch lsh 25 equivalents de SEG 731 package tray outline HC12(CPU12) Reference Manual MC68HC912D60CPV8 fprog 2 U-344 eprom 731 zener diode C2f TRANSISTOR
D1N4154

Abstract: 1N4154 ITT DIODE itt 1501
Text: Forward Current at t< 1 s and Tj = 25 °C 'fsm 500 mA Power Dissipation at Tamb = 25 °C case DO-35 Ptot 500 mW Power Dissipation at Tamb = 25 °C case DO-34 Ptot 3001) mW Junction Temperature case DO


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PDF 1N4154 DO-34 DO-35 DO-35) D1N4154 1N4154 ITT DIODE itt 1501
2007 - Not Available

Abstract: No abstract text available
Text: SOFT RECOVERY DIODE MODULE DSR300BA DSR300BA • 高速絶縁型ダイオード • 大電力スイッチング用 • 低損失、高速駆動可能 • 2ç´ å­å…¥ã‚Šçµ¶ç¸å½¢ãƒ¢ã‚¸ãƒ¥ãƒ¼ãƒ« 93.5max 80 VRRM VR (DC) IF AV) ( IFSM I2t Tj Tstg VISO 30max 1.5 単位 500 600 V 400 Itemâ€ƒé …â€ƒç›® 480 V Ratingsâ€ƒå®šæ ¼å€¤ Unit 単位 300 A 4000 , −di/dt(A/μs) 400 0.01 500 逆 回 時 間 trr (μs) 0.25 Thermal


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PDF DSR300BA 30max
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