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Part Manufacturer Description Datasheet Download Buy Part
IS42S16160G-6TLI Integrated Silicon Solution Inc Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, ROHS COMPLIANT, TSOP2-54
IS42S16160G-6TL Integrated Silicon Solution Inc Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, ROHS COMPLIANT, TSOP2-54
IS42S16160G-7BLI Integrated Silicon Solution Inc Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 0.80 MMM, PITCH, ROHS COMPLIANT, TFBGA-54
IS42S16160G-6BL Integrated Silicon Solution Inc Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 0.80 MMM, PITCH, ROHS COMPLIANT, TFBGA-54
IS42S16160G-5BL-TR Integrated Silicon Solution Inc Synchronous DRAM, 16MX16, 5ns, CMOS, PBGA54,
IS42S16160G-6BLI-TR Integrated Silicon Solution Inc Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54,
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IS42S16160G-7BI Integrated Silicon Solution Inc Avnet 252 - -
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2013 - IS42S16160G-5BL

Abstract: No abstract text available
Text: No file text available


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PDF IS42S83200G, IS42S16160G IS45S83200G, IS45S16160G 32Meg 16Meg 256Mb 54-Pin Alloy42 IS42S16160G-5BL
2013 - IS42S83200G

Abstract: No abstract text available
Text: No file text available


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PDF IS42S83200G, IS42S16160G IS45S83200G, IS45S16160G 32Meg 16Meg 256Mb 54-Pin IS42S83200G
2013 - IS42S16160G-5BL

Abstract: IS42S83200G IS42S16160G5BL
Text: No file text available


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PDF IS42S83200G, IS42S16160G IS45S83200G, IS45S16160G 32Meg 16Meg 256Mb 54-Pin Alloy42 IS42S16160G-5BL IS42S83200G IS42S16160G5BL
2012 - IS42S16160G

Abstract: IS42S16160G-6TL IS42S16160G-7BL IS42S16160G-7BI IS42S16160G-6TLI IS42S16160G-7BLI
Text: No file text available


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PDF IS42S83200G, IS42S16160G IS45S83200G, IS45S16160G 32Meg 16Meg 256Mb Alloy42 54-Pin IS42S16160G-6TL IS42S16160G-7BL IS42S16160G-7BI IS42S16160G-6TLI IS42S16160G-7BLI
2013 - IS42S83200G

Abstract: IS42S16160G-5BL
Text: No file text available


Original
PDF IS42S83200G, IS42S16160G IS45S83200G, IS45S16160G 32Meg 16Meg 256Mb 54-Pin Alloy42 IS42S83200G IS42S16160G-5BL
2013 - Not Available

Abstract: No abstract text available
Text: No file text available


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PDF IS42S83200G, IS42S16160G IS45S83200G, IS45S16160G 32Meg 16Meg 256Mb add60G-7BLA2à 54-Pinà Alloy42à
2010 - IS45S16160G-6TLA1

Abstract: IS42S83200G-7TL is42s16160g-7tli IS45S16160G-7TLA1
Text: No file text available


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PDF IS42S83200G, IS42S16160G IS45S83200G, IS45S16160G 32Meg 16Meg 256Mb termination60G-7TLA2 IS45S16160G-7CTNA2 IS45S16160G-7BLA2 IS45S16160G-6TLA1 IS42S83200G-7TL is42s16160g-7tli IS45S16160G-7TLA1
"Seven Segment LED Display"

Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT pin 1 PIN 6 pin 16 8,40 [0,331] 27,70 [1,091] 4,50 [0,177] 17,78 [0,700] pin 9 2,54 [0,100] a pls.) DIGIT DETAIL PART NUMBER LDS-C81 7BI -USB REV. ELECTRO-OPTICAL CHARACTERISTICS TA=25'C I f = 10mA PARAMETER MIN TYP MAX UNITS TEST COND PEAK WAVELENGTH FORWARD VOLTAGE REVERSE VOLTAGE AXIAL INTENSITY EMITTED COLOR: FACE COLOR: SEGMENT COLOR; 470 3.5 4,0 5.0 BODO BLUE , PRECISION REV. PART NUMBER LDS-C81 7BI -USB Q.8G" SEVEN SEGMENT, LED DISPLAY, 47Qnm BLUE CHIPS, GRAY PACE


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PDF LDS-C81 10OjuA "Seven Segment LED Display"
2907A

Abstract: ZT2907A mdpv
Text: capacitance Veb = 0.5 V,/ = 1 MHz Vcc = 30 V, Ic = 150 mA, 7bi = 15 mA Delay time Rise time Vcc = 6 V, 7c = 150 mA, 7bi = 7 b 2 = 15 mA Storage time Fall time (see diagrams) / Cobo Values typ. max. Unit


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PDF Q62702-Z2028 Q62702-Z2025 OT-223 2907A ZT2907A mdpv
Not Available

Abstract: No abstract text available
Text: time Fall time (see diagrams) Vcc = 7bi = 1 mA V be(o«) = ta 7bi = 7b2 = - -


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PDF Q62702-Z2029 OT-223 D1E2M74 D12HM7S
3906

Abstract: sot transistor 3906 transistor 3906 BT3904 transistor pnp 3906 3904 SOT SAW MARKING CODE SOT-23 transistor 3906 SOT23
Text: 100 nA, Vcc = 3 V beio» )= F Vce = - - 5 V, Rs = 7bi = 1 ki2,/= 1 kHz 1 mA íd t , time (see diagrams) ns ns ns ns 7bi = 7b2 = 1 mA tsXg fl Semiconductor Group 1772


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PDF Q68000-A4417 OT-23 EHP0Q77Q 3906 sot transistor 3906 transistor 3906 BT3904 transistor pnp 3906 3904 SOT SAW MARKING CODE SOT-23 transistor 3906 SOT23
3904

Abstract: tr 3904 TR 3906 PNP SM Transistor 3904 transistor marking s1a 3904 SOT23 4007S sot23 3904 BT3904 S1A SOT23
Text: , 7bi Vbe(oH) = 0.5 V Delay time Rise time Vcc = 3 V, 7c. = 10 mA, 7bi Storage time Fall time (see


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PDF 68000-A4416 OT-23 EHP0Q935 EHP00757 3904 tr 3904 TR 3906 PNP SM Transistor 3904 transistor marking s1a 3904 SOT23 4007S sot23 3904 BT3904 S1A SOT23
Not Available

Abstract: No abstract text available
Text: , Rs = 1 k i2 ,/ = 1 kHz Vcc = 3 V, 7c = 10 mA, 7bi = 1 mA Vbe(oh) = 0.5 Vdc ce Delay time Rise , tx 7bi = 7 2 = 1 mA b tl 2255 r ■1998-11-01 û53SbDS 01EE54E T57 I SMBT 3906


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PDF Q68000-A4417 OT-23 EHP00770 EHP00772 S35bOÂ 01EES4S A235b05 012254b
Not Available

Abstract: No abstract text available
Text: 0.5 V, 7c = 10 mA, 7bi = 1 mA Vcc = 3 V, 7c = 7bi = 1 mA ta - - ti 10 mA ts ti


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PDF Q68000-A8397 OT-89 0535bQ5 01EBb3D EHP00916 235bD5 D122b31 23SLD5
Siemens 1701

Abstract: 1701 Siemens 3904
Text: = 1 mA, Vce = 10 V, / = 1 kHz Vcc = 3 V, /c = 10 mA, 7bi = 1 mA ^iS 0.5 V Delay time Rise , 200 50 ns ns ns ns 7bi = 7b2 = 1 mA ts\Q fi Semiconductor Group 1703 SIEMENS


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PDF Q62702-Z2029 OT-223 PZT3904 EHP00293 Siemens 1701 1701 Siemens 3904
40372

Abstract: No abstract text available
Text: ASVIP CHK AMP INCORPORATED Harrisburg, Pa. _ APP APPD DSGN APPO ^ 7bi C -/Û $ / NAME W


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PDF M-M-57 trS-91 35D8S D1-6-54 40372
2SC2208

Abstract: No abstract text available
Text: €” 5A, 7bi - /B2~10mA 0.4 — Ms .9 - > ' * y 0# US toll — 4.0 — Ms * Pulse Test


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PDF 2SC2208Â Ta-25Â 2SC2208
2SD1455

Abstract: 2SD900B 2sd900
Text: — — 3.0 1 V t ^ tf 7c = 4A, 7bi = 1. 1A, 7œ = -1.6A, LR=0 — — î.o ; Ms â


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PDF 35max. 2SD900B 300mA, 2SDl455 2SD1455. 2SD1455 2sd900
2SC3342

Abstract: No abstract text available
Text: if 7ep = 3At 7bI =0.6A —' 0.2 — Ms * > <>V X i»j5c * Pulse Test 0 HITACHI 517


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PDF 35max. 2SC3342 Tc-25Â
2SB468

Abstract: K2040
Text: m tf 7c = -6A, 7bi -= —0.6A, /fl2 = +1.2A - 2.5 ps * 2SB468 lì AréfMÈKJ: ') TIS,«?) J: Ã


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PDF 2SB468 2SB468 300mm X200mm 100mA, /e--100mA, K2040
LA5693D

Abstract: LA5693M LA5693S LA5693
Text: LA5693D , LA5693S , LA5693M K ^ • *4 ^W^SiS 7BI & — 483 — h n ititimm 5V t'y * -J-?- F -y y ■ÍM -<-, Ufficiti E] fêirrtjÈÏLfc-r-f 3V •yXTASMlfi'Í.PNP h 9 vì>X ? ■SC ¿le i OiËêSfnau^ i U— 'J -t -y F • * — ;F Fffiíl ( CK WAJJX-f U T) ifüSAC^S. o *¡E'J-t.y FlêiÈtSIÊ o CK A^ilx.y o f&mSŒ&ôm-C^* OA., ir—8 trv DIL/-î.y r— Hí-7 Y ■•/ -7 X D) 8t'y ^Xf. V-7 SO 9 t'y -y í' SIL A -y ir— y ( +Í-7 y -y 7 X S) 7*P V Ürítí» «sort {T œs"(2) ¡T »Â


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PDF LA5693D LA5693S LA5693M LAS693S 500mW 55--hi50Ã LA5693D, 7orT--50rnA -40tST LA5693D LA5693S LA5693
2SD1496

Abstract: SD1496
Text: 5 V - ■X. i y 9 âèfliltii VfìEisat) 7c = 4.5A, /b = 1.2A - - 1.5 V » m m tj 7C = 3A, 7bi =


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PDF SD1496 2SD1496 200mniX300mrnX1 200mm 300mm SD1496
2SC2614

Abstract: No abstract text available
Text: ^ .y VbE (.sat) /c=2.5A, /S=0.5A _ — 1.5 V ? - y * > fà m f™ /c-5A, 7bi = -Jb2 = 1.0A, Vcc


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PDF 2SC2614 100mH
pentode 1S4

Abstract: EC70
Text:  T5* mr SYLVANIA TYPE 3S4 PENTODE POWER AMPLIFIER MECHANICAL DATA 7-BI y2, Outline 5-2 Button 7-Pin Basing. Mounting Position. ELECTRICAL DATA FILAMENT CHARACTERISTICS Series 7BA Any Parallel' Filament Voltage D C. Filament Current. MAXIMUM RATINGS (Design Center Values) Plate Voltage. Screen Voltage. Cathode Current (Zero Signal}2. 2.8 50 Series


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PDF
Not Available

Abstract: No abstract text available
Text: Supershield-IDC Only ■•I16. 7BI *■#4-40 NC-2B Thd. #4-40 Thread In Rivet Ordering Information-IDC


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PDF 77-72500-SS 77-72500-SW 77-82500-SS 77-82500-SL
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