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2010 - BAP63

Abstract: No abstract text available
Text: €­ dB IF = 10 mA; f = 2450 MHz s212 1.5 14.5 IF = 10 mA; f = 1800 MHz insertion loss 0.9 VR = 0; f = 900 MHz IF = 1 mA; f = 2450 MHz s212  IF = 1 mA; f = 1800 MHz insertion loss 1.8 IF = 0.5 mA; f = 2450 MHz s212 1.17 IF = 0.5 mA; f = 1800 MHz insertion loss  VR = 0; f = 2450 MHz s212  3 VR = 0; f = 1800 MHz isolation 3.5 IF = 100 mA; f = 100 MHz; note 1 s212 2.5 1.95 IF = 10 mA; f = 100 MHz


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PDF M3D102 BAP63-05W OT323 MAM38ontact R77/03/pp8 BAP63
2010 - Not Available

Abstract: No abstract text available
Text: IF = 100 mA s212 s212 s212 s212 s212 isolation , and inserted in series with a 50  stripline circuit. Tamb = 25 C. Insertion loss ( s212 , ( s212 ) of the diode as a function of frequency; typical values. NXP Semiconductors Product


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PDF BAP1321-03 sym006 OD323 SC-76) R77/03/pp8
2010 - Not Available

Abstract: No abstract text available
Text: mA; f = 100 MHz; note 1 rD 10 20  IF = 10 mA; f = 100 MHz; note 1 s212 , = 0; f = 2450 MHz isolation 3.8 0.7 VR = 0; f = 1800 MHz s212 2 IF = 100 , mA; f = 2450 MHz s212 insertion loss dB IF = 10 mA; f = 1800 MHz s212 dB , s212 2.06 IF = 0.5 mA; f = 2450 MHz 0.10  dB IF = 100 mA; f = 2450 MHz 0.16 , loss ( s212 ) of the diode as a function of frequency; typical values. 2001 Apr 17 1.5 (3


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PDF M3D102 BAP64-06W OT32ontact R77/02/pp9
2010 - Not Available

Abstract: No abstract text available
Text: s212  1.8 VR = 0; f = 1800 MHz isolation 3 1.17 IF = 100 mA; f = 100 MHz; note 1 s212 1.95 IF = 10 mA; f = 100 MHz; note 1 7.8  dB IF = 0.5 mA; f = 900 MHz 0.21  dB IF = 0.5 mA; f = 1800 MHz s212 insertion loss 0.28 ï , IF = 1 mA; f = 1800 MHz s212 insertion loss 0.26  dB IF = 1 mA; f = 2450 MHz 0.35  dB IF = 10 mA; f = 900 MHz 0.13  dB IF = 10 mA; f = 1800 MHz s212


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PDF BAP63-03 sym006 OD323 OD323) R77/04/pp8
2010 - Not Available

Abstract: No abstract text available
Text: 0.35   10.2  dB 5.8  dB VR = 0; f = 2450 MHz s212 isolation VR = 0; f = 900 MHz VR = 0; f = 1800 MHz s212 4.1  dB 0.1  dB 0.14  dB IF = 1 mA; f = 2450 MHz s212 IF = 1 mA; f = 900 MHz IF = 1 mA; f = 1800 , 0.06  dB 0.1  dB IF = 10 mA; f = 2450 MHz s212   IF = 10 mA; f = 1800 MHz insertion loss 0.06 0.1 IF = 5 mA; f = 2450 MHz s212 IF = 5 mA; f =


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PDF BAP65-03 sym006 OD323ontact R77/04/pp8
2010 - Not Available

Abstract: No abstract text available
Text: 1.2 1.8  IF = 100 mA isolation VR = 60 V IF = 0.5 mA s212 V VR = 20 , — 15.7  dB f = 100 MHz; note 1 VR = 0; f = 900 MHz VR = 0; f = 1800 MHz s212 , €­ dB IF = 10 mA; f = 1800 MHz s212 dB  IF = 1 mA; f = 2450 MHz insertion loss  0.43 IF = 1 mA; f = 1800 MHz s212 0.35 IF = 0.5 mA; f = 2450 MHz , 900 MHz 0.10  dB IF = 100 mA; f = 1800 MHz s212 0.18  dB IF =


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PDF M3D088 BAP1321-04 MAM107 R77/01/pp8
2010 - Not Available

Abstract: No abstract text available
Text: V; f = 1 MHz rD 0.9 0.65 0.95  IF = 10 mA; f = 100 MHz; note 1 s212 , 9.4  dB VR = 0; f = 1800 MHz s212 insertion loss 4.8  dB VR = 0 , 1800 MHz s212 insertion loss 0.18  dB IF = 1 mA; f = 2450 MHz 0.28 ï , s212 0.16 IF = 5 mA; f = 2450 MHz 0.15  dB IF = 10 mA; f = 2450 MHz 0.25 , IF = 100 mA; f = 900 MHz IF = 100 mA; f = 1800 MHz s212 0.24  dB L


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PDF M3D088 BAP65-05 MAM108 R77/01/pp8
2010 - Not Available

Abstract: No abstract text available
Text: 100 mA; f = 100 MHz s212 - 10 - dB - 5.8 - dB VR = 0; f = 2450 MHz insertion loss VR = 0; f = 900 MHz VR = 0; f = 1800 MHz s212 isolation - 4.4 - , s212 - IF = 1 mA; f = 2450 MHz - 0.13 - dB All information provided in this , Unit s212 insertion loss IF = 10 mA; f = 900 MHz - 0.07 - dB IF = 10 mA , 900 MHz IF = 100 mA; f = 1800 MHz s212 - 0.128 - dB L charge carrier


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PDF BAP65-02 OD523 sym006
2010 - Not Available

Abstract: No abstract text available
Text: s212  15.7  dB VR = 0; f = 2450 MHz insertion loss  13.5  dB IF = 0.5 mA; f = 900 MHz  1.84  dB IF = 0.5 mA; f = 1800 MHz s212 ï , ; f = 900 MHz  1.08  dB IF = 1 mA; f = 1800 MHz s212  1.13 ï , 1800 MHz s212  0.36  dB 1.05  s 1.6  nH L , . Tamb = 25 C. Insertion loss s212 of the diode in on-state as a function of frequency


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PDF M3D102 BAP50-05W OT323 MAM382 R77/02/pp8
2012 - Not Available

Abstract: No abstract text available
Text: Conditions Min Typ Max Unit s212 insertion power gain f = 450 MHz - - 18.5 , s212 insertion power gain f = 100 MHz ICC(tot) = 6 mA maximum stable gain 24.5 - , - dB ICC(tot) = 6 mA - 24.5 - dB 150 MHz frequency s212 insertion , 23.0 - dB 450 MHz frequency s212 insertion power gain f = 450 MHz ICC(tot) = , - dB ICC(tot) = 6 mA - 20.5 - dB 900 MHz frequency s212 insertion


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PDF BGU6102 BGU6102 BGU6101, BGU6104)
2010 - Not Available

Abstract: No abstract text available
Text: - VR = 0; f = 1800 MHz s212 - IF = 100 mA; f = 100 MHz - 3.5 - dB , Parameter Conditions Min Typ Max Unit s212 insertion loss IF = 1 mA; f = 900 , MHz IF = 10 mA; f = 1800 MHz s212 insertion loss - IF = 5 mA; f = 2450 MHz s212 insertion loss IF = 5 mA; f = 900 MHz IF = 5 mA; f = 1800 MHz s212 - 0.21 - dB , the analyzer Tee network. Tamb = 25 C. Fig 3. Insertion loss ( s212 ) of the diode in


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PDF BAP65-05W OT323
2007 - Transistor S 40442

Abstract: THN5601SF 61529 78262 161-717 37185 54368 177960 120770 16-2-472
Text: IS21I2 IS21I2 -5 -5 -10 1.0 1.5 2.0 2.5 3.0 IS21I2 -5 -10 0.5 5 , 15 18 14 12 5 10 6 ) MAG 4 2 IS21I2 0 2 IS21I -2 -4 0.5 1.0 1.5 2.0 2.5 3.0 IS21I2 0 -2 -5 6 4 2 0 MAG 8 , and MAG vs. Frequency VCE = 4.8 V. IC = 50 mA IS21I2 0 -2 -4 0.5 6 4 0 -4 , 6 2 0 IS21I -2 2 4 -2 -4 2 IS21I2 0 -2 -4 0.5 1.0 1.5


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PDF THN5601SF OT-23F 300GHz 500GHz 700GHz 900GHz 000GHz IS21I Transistor S 40442 THN5601SF 61529 78262 161-717 37185 54368 177960 120770 16-2-472
16-2-472

Abstract: 161-717 45650 Transistor S 40442 SMD IC MARKING GP marking am1 smd RF NPN POWER TRANSISTOR C 10-12 GHZ hn6501 25804 403 inductor coil smd
Text: 10 0 ) 0 0 IS21I2 IS21I2 -5 -5 -10 1.0 1.5 2.0 2.5 freq, GHz , 3.0 IS21I2 -5 -10 0.5 5 ( ( ) 5 ( ( ( ( ) MAG MAG MAG 5 , www.tachyonics.co.kr 3.0 IS21I2 0 -2 -5 6 4 2 0 MAG 8 ( ( ) MAG 8 , Frequency. Vce=4.8V. Ic = 50mA www.tachyonics.co.kr 3.0 IS21I2 0 -2 -4 6 4 2 0 , =4.8V. Ic = 80mA www.tachyonics.co.kr 3.0 IS21I2 0 0.5 1.0 1.5 2.0 2.5 3.0


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PDF THN5601SF OT-23F THN5601SF OT-23F 26dBm 900MHz IS21I 16-2-472 161-717 45650 Transistor S 40442 SMD IC MARKING GP marking am1 smd RF NPN POWER TRANSISTOR C 10-12 GHZ hn6501 25804 403 inductor coil smd
2002 - MAX2470

Abstract: MAX2470EUT-T MAX2471 MAX2471EUT-T 54 dbm sot23-6
Text: 200 fIN = 10MHz HI/LO = VCC Gain (Note 3) IS21I2 fIN = 200MHz Noise Figure 2 NF , TMAX MAX 500 10 fIN = 10MHz IS21I2 TYP 16.9 11.3 15.6 dB 17.8 Voltage Gain , +25°C 13.0 IS21I2 (dB) IS21I2 (dB) 14.0 17.0 MAX2470/71-05 TA = -40°C MAX2470


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PDF 10MHz 500MHz MAX2470/MAX2471 MAX2470 200MHz. MAX2471 MAX2470EUT-T MAX2471EUT-T 54 dbm sot23-6
1999 - rf amplifier 10mhz

Abstract: max2470 evaluation kits MAX2471 MAX2470 MAX2470EUT-T MAX2471EUT-T
Text: 200 fIN = 10MHz HI/LO = VCC Gain (Note 3) IS21I2 fIN = 200MHz Noise Figure 2 NF , , TA = TMIN to TMAX MAX 500 10 fIN = 10MHz IS21I2 TYP 16.9 11.3 15.6 dB 17.8 , +25°C 13.0 IS21I2 (dB) IS21I2 (dB) 14.0 17.0 MAX2470/71-05 TA = -40°C MAX2470


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PDF 10MHz 500MHz MAX2470/MAX2471 MAX2470 200MHz. MAX2471 rf amplifier 10mhz max2470 evaluation kits MAX2470EUT-T MAX2471EUT-T
LT3046

Abstract: 305 motorola motorola rf Power Transistor t 228
Text: MOTOROLA SC (XSTRS/R F) MOTOROLA ■SEMICONDUCTOR TECHNICAL DATA 4bE D b3b?2S4 00=14224 4 ■flOTb T33-05 The RF Line NPN Silicon High Frequency Transistor . designed for ultra-linear communications or instrumentation applications. • Low Noise — 2.5 dB Typ @ f - 200 MHz • High Gain — IS21I2 = 15 dB Typ @ f = 300 MHz • Low Distortion — ITO - 45 dBm Typ @ f = 300 MHz LT3046 le = 150 mA , Insertion Gain IVqe = 14 V, lc = 40 mA, f - 300 MHz) IS21I2 — 15.5 — dB Output Power 1 dB Compression


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PDF T33-05 IS21I2 LT3046 305 motorola motorola rf Power Transistor t 228
TA4000F

Abstract: s22p 2L2 marking
Text: 957 TOSHIBA TA4000F IS21I2 - f NF - f Ta = 25°C Vcc = 5V , 0.1 0.3 0.5 1 FREQUENCY f (GHz) po ; im3 - pin IS21I2 , nf, icc - vcc


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PDF TA4000F 700MHz 400MHz IS21I2, 400MHz 401MHz TA4000F s22p 2L2 marking
MJE 15024

Abstract: BF111 NE662M04 2SC5508 NE662M04-T2 NE662M04-T2-A S21E TRANSISTOR 9642 IC AT 6884
Text: Gain, IS21I2 (dB) 30 VCE = 2 V, IC = 20 mA 20 VCE = 2 V, IC = 5 mA 10 0 0.1 1 2 VCE = 2 V, IC = 5 mA 30 MSG 20 IS21I2 MAG 10 0 0.1 10 12 1 2 10 , 30.00 VCE = 2 V, IC = 20 mA 30 MSG 20 IS21I2 MAG 10 1 2 10 Frequency, f , AVAILABLE GAIN vs. COLLECTOR CURRENT Maximum Stable Gain, MSG (dB) Insertion Power Gain, IS21I2 , , MSG (dB) Insertion Power Gain, IS21I2 Maximum Available Gain, MAG (dB) Forward Insertion Gain


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PDF NE662M04 OT-343 NE662M04 NE662M0anty MJE 15024 BF111 2SC5508 NE662M04-T2 NE662M04-T2-A S21E TRANSISTOR 9642 IC AT 6884
philips catv 860 amplifier ic

Abstract: D200-400 SEMICONDUCTO applications
Text: source and load impedance - 75 - Q Gt transducer gain = IS21I2 28.5 30 31.5 dB agt flatness of , lB supply current - 165 - mA Gt transducer gain = IS21I2 28 30 32 dB agt flatness of frequency


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PDF 7110fl2b OM2Q83/86 philips catv 860 amplifier ic D200-400 SEMICONDUCTO applications
2005 - 150J10

Abstract: 7011 NPN TRANSISTOR
Text: Forward Insertion Gain, IS21I2 (dB) 30 MSG 20 IS21I2 10 10 VCE = 2 V, IC = 5 mA MAG 0 , Available Gain, MAG (dB) Maximum Stable Gain, MSG (dB) Insertion Power Gain, IS21I2 Maximum Available , MSG 20 IS21I2 MAG 10.00 10 5.00 0 0.1 0.00 1 2 10 1 10 100 , AVAILABLE GAIN vs. COLLECTOR CURRENT 30.00 Maximum Stable Gain, MSG (dB) Insertion Power Gain, IS21I2


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PDF NE662M04 OT-343 NE662M04 150J10 7011 NPN TRANSISTOR
TA4000F

Abstract: rf power amplifier 400MHz IS21I2
Text: & 10000pF -O 5 1997-07-22 2/4 TOSHIBA TA4000F IS21I2 - f NF - f Ta = 25°C Vcc = 5V , 0.1 0.3 0.5 1 FREQUENCY f (GHz) po ; im3 - pin IS21I2 , nf, icc - vcc -50


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PDF TA4000F 700MHz 400MHz IS21I2, 400MHz 401MHz TA4000F rf power amplifier 400MHz IS21I2
2002 - Not Available

Abstract: No abstract text available
Text: BGA622 1.4 - 6 GHz SiGe LNA ES: NOW WS DS M 1 26.04.2002 Page 1 Vcc = 2.7V, Symbol IS21I2 NF P-1dB IIP3 Id MP: 05/02 Features SOT343 Applications 50Ω matched - no external components required NE W MMIC UMTS / CDMA • GSM / TDMA / EDGE • GPS / ISM • Bluetooth • UMTS 1.1dB Noise Figure • On-Off Switch • 50Ω matched @ > 2 GHz • Low Parts Count • frequency = 2.14GHz Parameter Insertion Power Gain Noise Figure Input Compression


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PDF BGA622 IS21I2 OT343 14GHz
Not Available

Abstract: No abstract text available
Text: load impedance - 75 - a Gt transducer gain = IS21I2 - 10 11 dB AGt , ance 'b supply current - 85 - mA gt transducer gain = IS21I2 10 11 12


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PDF bb53R31 OM2081/60
2493 transistor

Abstract: marking 9721 IC 7109
Text: 07.22 -108.95 IS21I2 (dB) 22.76 20.45 18.20 16.23 14.60 13.18 12.00 10.98 10.09 9.24 8.51 7.91 7.35 6.82 , -1 73.86 -175.05 -178.11 -178.40 -173.59 -169.49 -1 68.62 IS21I2 (dB) 29.39 24.93 21.81 19.47 17.66


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PDF MT3S04AT IS21I2 2493 transistor marking 9721 IC 7109
Not Available

Abstract: No abstract text available
Text: Zs-ZL source and load impedance - 75 - n Gt transducer gain = IS21I2 28 29 , supply current - 175 - mA gt transducer gain = IS21I2 28 29 30 dB AGt


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PDF OM2083/60
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