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Not Available

Abstract: No abstract text available
Text: -129.5 -155.0 -175.8 169.4 156.6 145.7 136.1 126.2 116.9 S21ï £¦ 11.929 8.854 5.231 , -168.2 172.9 159.6 148.3 138.5 129.7 120.5 111.7 S21ï £¦ 17.590 11.116 6.099 4.213 3.212 , 151.6 141.6 133.1 124.5 115.4 107.0 S21ï £¦ 21.435 12.390 6.547 4.481 3.408 2.792 2.378 , 122.5 113.8 105.4 S21ï £¦ 22.555 12.614 6.590 4.499 3.419 2.796 2.382 2.089 1.869 1.700 , S21ï £¦ 12.674 9.416 5.688 4.015 3.085 2.534 2.164 1.896 1.693 1.530 1.394 ∠S21 144.1


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PDF 2SC5415A ENA1080A 250mm2Ã A1080-8/8
2010 - BAP63

Abstract: No abstract text available
Text: €­ dB IF = 10 mA; f = 2450 MHz s212 1.5 14.5 IF = 10 mA; f = 1800 MHz insertion loss 0.9 VR = 0; f = 900 MHz IF = 1 mA; f = 2450 MHz s212  IF = 1 mA; f = 1800 MHz insertion loss 1.8 IF = 0.5 mA; f = 2450 MHz s212 1.17 IF = 0.5 mA; f = 1800 MHz insertion loss  VR = 0; f = 2450 MHz s212  3 VR = 0; f = 1800 MHz isolation 3.5 IF = 100 mA; f = 100 MHz; note 1 s212 2.5 1.95 IF = 10 mA; f = 100 MHz


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PDF M3D102 BAP63-05W OT323 MAM38ontact R77/03/pp8 BAP63
2010 - Not Available

Abstract: No abstract text available
Text: mA; f = 100 MHz; note 1 rD 10 20  IF = 10 mA; f = 100 MHz; note 1 s212 , = 0; f = 2450 MHz isolation 3.8 0.7 VR = 0; f = 1800 MHz s212 2 IF = 100 , mA; f = 2450 MHz s212 insertion loss dB IF = 10 mA; f = 1800 MHz s212 dB , s212 2.06 IF = 0.5 mA; f = 2450 MHz 0.10  dB IF = 100 mA; f = 2450 MHz 0.16 , loss ( s212 ) of the diode as a function of frequency; typical values. 2001 Apr 17 1.5 (3


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PDF M3D102 BAP64-06W OT32ontact R77/02/pp9
Not Available

Abstract: No abstract text available
Text: -123.45 -137.17 -149.31 -159.59 -168.64 -176.38 S21ï £¦ 3.328 2.833 2.349 1.974 1.709 , -171.08 -178.68 174.60 168.93 S21ï £¦ 7.483 5.412 4.036 3.182 2.627 2.244 1.958 1.749 , 169.11 164.18 S21ï £¦ 10.162 6.625 4.733 3.666 3.003 2.537 2.212 1.962 1.764 1.602 , ∠S11 -91.34 -130.04 -149.86 -162.69 -171.77 -179.07 174.71 169.18 164.67 160.55 S21ï , ∠S11 -103.02 -139.11 -156.74 -167.49 -175.59 177.94 172.60 167.70 163.21 159.35 S21ï


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PDF 15GN03CA ENA1106A A1106-8/8
AS21

Abstract: No abstract text available
Text: 193.5 186.5 180.9 174.2 S21ï £¦ 9.020 8.560 8.281 7.883 7.588 7.221 6.686 6.254 5.783 , 216.8 207.2 199.1 191.6 184.3 177.4 171.5 165.4 160.9 155.9 S21ï £¦ 14.343 13.500 , 192.3 184.7 178.1 171.9 165.9 160.0 155.1 149.7 145.4 141.2 S21ï £¦ 16.942 14.095 , S21ï £¦ 17.664 13.659 10.775 8.448 6.847 5.771 4.937 4.332 3.842 3.458 2.876 2.478 2.179 , -84.3 268.0 259.8 246.7 236.1 227.1 218.7 210.6 203.0 195.6 188.7 183.0 176.1 S21ï


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PDF MCH3007 ENA1925A A1925-12/12 AS21
PJ 0416 1v

Abstract: PJ 1179
Text: ± V k 2- l ) MSG = IS21I /IS12I 1 -I S n l2 -I S 22I2 + IDI2 „ „ „ „ „ k= ' c I i c ^ , FREQUENCY (GHz) Figure 9. Gain vs. Frequency at 1 V, 1 mA. N ote: d B (IS 2jl) = 20 * log( IS21I ) 5 , = IS21I /IS 12I 1 dB \\ A \ V ' / \\ *\ X / V% % V X gmax dB(S[2,1]) k , 2- l ) M S G = IS21I /IS 12I ropt x A ng 71 138 152 -173 -142 -114 -93 1 R â , gain (MSG) if k < 1 k = stab ility factor M A G = |ll|(k ± A /k 2- l ) MSG = IS21I /IS12I . 1 -


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PDF AT-32032 OT-323 SC-70) SC-70 OT-323) PJ 0416 1v PJ 1179
Not Available

Abstract: No abstract text available
Text: -102.1 -124.4 -139.9 -155.0 -167.3 -177.3 173.3 164.9 S21ï £¦ 2.443 2.257 1.847 2.016 , -163.5 -173.9 176.9 169.5 161.8 154.4 S21ï £¦ 6.935 5.731 5.112 4.069 3.250 2.768 2.366 , 174.2 166.8 159.7 154.0 148.0 S21ï £¦ 13.964 11.969 7.972 5.753 4.413 3.548 2.983 2.574 , 157.1 150.6 145.3 S21ï £¦ 18.252 14.590 8.907 6.149 4.720 3.802 3.203 2.738 2.400 2.171 , S21ï £¦ 2.316 2.392 2.007 1.894 1.743 1.422 1.345 1.206 1.056 1.005 0.812 ∠S21 164.1


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PDF 2SC5501A ENA1061A 500mW A1061-8/8
2010 - Not Available

Abstract: No abstract text available
Text: s212  1.8 VR = 0; f = 1800 MHz isolation 3 1.17 IF = 100 mA; f = 100 MHz; note 1 s212 1.95 IF = 10 mA; f = 100 MHz; note 1 7.8  dB IF = 0.5 mA; f = 900 MHz 0.21  dB IF = 0.5 mA; f = 1800 MHz s212 insertion loss 0.28 ï , IF = 1 mA; f = 1800 MHz s212 insertion loss 0.26  dB IF = 1 mA; f = 2450 MHz 0.35  dB IF = 10 mA; f = 900 MHz 0.13  dB IF = 10 mA; f = 1800 MHz s212


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PDF BAP63-03 sym006 OD323 OD323) R77/04/pp8
2010 - Not Available

Abstract: No abstract text available
Text: 0.35   10.2  dB 5.8  dB VR = 0; f = 2450 MHz s212 isolation VR = 0; f = 900 MHz VR = 0; f = 1800 MHz s212 4.1  dB 0.1  dB 0.14  dB IF = 1 mA; f = 2450 MHz s212 IF = 1 mA; f = 900 MHz IF = 1 mA; f = 1800 , 0.06  dB 0.1  dB IF = 10 mA; f = 2450 MHz s212   IF = 10 mA; f = 1800 MHz insertion loss 0.06 0.1 IF = 5 mA; f = 2450 MHz s212 IF = 5 mA; f =


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PDF BAP65-03 sym006 OD323ontact R77/04/pp8
2010 - Not Available

Abstract: No abstract text available
Text: 1.2 1.8  IF = 100 mA isolation VR = 60 V IF = 0.5 mA s212 V VR = 20 , — 15.7  dB f = 100 MHz; note 1 VR = 0; f = 900 MHz VR = 0; f = 1800 MHz s212 , €­ dB IF = 10 mA; f = 1800 MHz s212 dB  IF = 1 mA; f = 2450 MHz insertion loss  0.43 IF = 1 mA; f = 1800 MHz s212 0.35 IF = 0.5 mA; f = 2450 MHz , 900 MHz 0.10  dB IF = 100 mA; f = 1800 MHz s212 0.18  dB IF =


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PDF M3D088 BAP1321-04 MAM107 R77/01/pp8
2010 - Not Available

Abstract: No abstract text available
Text: IF = 100 mA s212 s212 s212 s212 s212 isolation , and inserted in series with a 50  stripline circuit. Tamb = 25 C. Insertion loss ( s212 , ( s212 ) of the diode as a function of frequency; typical values. NXP Semiconductors Product


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PDF BAP1321-03 sym006 OD323 SC-76) R77/03/pp8
Not Available

Abstract: No abstract text available
Text: 152.7 149.4 146.0 142.6 139.0 135.6 131.8 128.2 124.6 120.8 117.3 113.8 S21ï £¦ 17.728 , 114.1 110.7 107.4 S21ï £¦ 22.719 12.745 8.865 6.618 5.279 4.399 3.771 3.307 2.961 2.683 , 105.1 S21ï £¦ 11.994 6.267 4.334 3.254 2.616 2.196 1.895 1.674 1.516 1.378 1.270 1.178 , 127.2 123.4 119.8 116.2 S21ï £¦ 19.421 13.670 10.173 7.684 6.158 5.138 4.400 3.867 , 127.2 123.6 120.1 116.5 113.0 109.6 S21ï £¦ 31.907 17.954 12.350 9.160 7.261 6.025


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PDF MCH4020 ENA1280A 16GHz A1280-11/11
16-2-472

Abstract: 161-717 45650 Transistor S 40442 SMD IC MARKING GP marking am1 smd RF NPN POWER TRANSISTOR C 10-12 GHZ hn6501 25804 403 inductor coil smd
Text: 10 0 ) 0 0 IS21I2 IS21I2 -5 -5 -10 1.0 1.5 2.0 2.5 freq, GHz , 3.0 IS21I2 -5 -10 0.5 5 ( ( ) 5 ( ( ( ( ) MAG MAG MAG 5 , ) MAG 4 IS21I IS21I 0 2 2 2 -2 -4 -4 0.5 1.0 1.5 2.0 2.5 , www.tachyonics.co.kr 3.0 IS21I2 0 -2 -5 6 4 2 0 MAG 8 ( ( ) MAG 8 , 10 ( ( ( ( 8 6 4 6 4 2 IS21I -2 2 2 IS21I 0 2 -2 -4


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PDF THN5601SF OT-23F THN5601SF OT-23F 26dBm 900MHz IS21I 16-2-472 161-717 45650 Transistor S 40442 SMD IC MARKING GP marking am1 smd RF NPN POWER TRANSISTOR C 10-12 GHZ hn6501 25804 403 inductor coil smd
2010 - Not Available

Abstract: No abstract text available
Text: V; f = 1 MHz rD 0.9 0.65 0.95  IF = 10 mA; f = 100 MHz; note 1 s212 , 9.4  dB VR = 0; f = 1800 MHz s212 insertion loss 4.8  dB VR = 0 , 1800 MHz s212 insertion loss 0.18  dB IF = 1 mA; f = 2450 MHz 0.28 ï , s212 0.16 IF = 5 mA; f = 2450 MHz 0.15  dB IF = 10 mA; f = 2450 MHz 0.25 , IF = 100 mA; f = 900 MHz IF = 100 mA; f = 1800 MHz s212 0.24  dB L


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PDF M3D088 BAP65-05 MAM108 R77/01/pp8
2006 - Not Available

Abstract: No abstract text available
Text: (Common emitter) VCE=1V, IC=5mA Freq(MHz) S11 ∠S11 S21ï £¦ ∠S21 S12ï , MCH4009 S Parameters (Common emitter) VCE=1V, IC=10mA Freq(MHz) S11 ∠S11 S21ï , £¦ ∠S11 S21ï £¦ ∠S21 S12 ∠S12 S22 ∠S22 500 0.537 -90.6 , =30mA Freq(MHz) S11 ∠S11 S21ï £¦ ∠S21 S12 ∠S12 S22 ∠S22 , (Common emitter) VCE=3V, IC=5mA Freq(MHz) S11 ∠S11 S21ï £¦ ∠S21 S12ï


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PDF MCH4009 ENA0389 25GHz A0389-13/13
2001 - PD57002

Abstract: PD57002S AN1294 0137 0904 907 TRANSISTOR smd
Text: - PD57002S COMMON SOURCE S-PARAMETER (PD57002) (VDS = 28V IDS = 75mA) FREQ S11 IS21I , IS11I S11 IS21I S21 IS12I S12 IS22I S22 (MHz) 50 0.998 -17 10.95 , IDS = 75mA) FREQ IS11I S11 IS21I S21 IS12I S12 IS22I S22 (MHz) 50 , (PD57002) (VDS = 13.5V IDS = 150mA) FREQ IS11I S11 IS21I S21 IS12I S12 IS22I S22 , SOURCE S-PARAMETER (PD57002S) (VDS = 28V IDS = 75mA) FREQ IS11I S11 IS21I S21 IS12I


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PDF PD57002 PD57002S PowerSO-10RF PD57002 PowerSO-10 PD57002S AN1294 0137 0904 907 TRANSISTOR smd
2006 - sanyo eg 8500

Abstract: transistor 9747 MCH4009
Text: ) S11 ∠S11 S21ï £¦ ∠S21 S12 ∠S12 S22 ∠S22 500 0.801 , =10mA Freq(MHz) S11 ∠S11 S21ï £¦ ∠S21 S12 ∠S12 S22 ∠S22 , emitter) VCE=1V, IC=20mA Freq(MHz) S11 ∠S11 S21ï £¦ ∠S21 S12 ∠S12 , Parameters (Common emitter) VCE=1V, IC=30mA Freq(MHz) S11 ∠S11 S21ï £¦ ∠S21 , S21ï £¦ ∠S21 S12 ∠S12 S22 500 0.832 -42.0 11.342 143.7


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PDF MCH4009 ENA0389 25GHz A0389-13/13 sanyo eg 8500 transistor 9747 MCH4009
2001 - Not Available

Abstract: No abstract text available
Text: VDD = 3 V TC = 25°C 20 1.0 10 10 S21ï £¦ 0 −10 −10 S12 â , transfer gain, Reverse transfer gain S21ï £¦, S21ï £¦ (dB) 12 Power gain PG (dB) 10 Noise , Power gain PG (dB) M Di ain sc te on na tin nc ue e/ d GN01010 GaAs MMICs 30 S21ï


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PDF GN01010 GN1010)
2003 - AN1294

Abstract: PD57002 PD57002S BTS 472 E 0927 TRANSISTOR
Text: S-PARAMETER (PD57002) (VDS = 28V IDS = 75mA) FREQ S11 IS21I S21 IS12I S12 IS22I S22 , PD57002S COMMON SOURCE S-PARAMETER (PD57002) (VDS = 28V IDS = 150mA) FREQ IS11I S11 IS21I , IS21I S21 IS12I S12 IS22I S22 (MHz) 50 0.969 -17 10.14 166 0.009 74 , IS21I S21 IS12I S12 IS22I S22 (MHz) 50 0.986 -18 11.58 165 0.009 75 , IS21I S21 IS12I S12 IS22I S22 (MHz) 50 0.993 -16 9.99 166 0.007 77


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PDF PD57002 PD57002S PowerSO-10RF PD57002 PowerSO-10 AN1294 PD57002S BTS 472 E 0927 TRANSISTOR
2010 - Not Available

Abstract: No abstract text available
Text: - VR = 0; f = 1800 MHz s212 - IF = 100 mA; f = 100 MHz - 3.5 - dB , Parameter Conditions Min Typ Max Unit s212 insertion loss IF = 1 mA; f = 900 , MHz IF = 10 mA; f = 1800 MHz s212 insertion loss - IF = 5 mA; f = 2450 MHz s212 insertion loss IF = 5 mA; f = 900 MHz IF = 5 mA; f = 1800 MHz s212 - 0.21 - dB , the analyzer Tee network. Tamb = 25 C. Fig 3. Insertion loss ( s212 ) of the diode in


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PDF BAP65-05W OT323
2010 - Not Available

Abstract: No abstract text available
Text: 100 mA; f = 100 MHz s212 - 10 - dB - 5.8 - dB VR = 0; f = 2450 MHz insertion loss VR = 0; f = 900 MHz VR = 0; f = 1800 MHz s212 isolation - 4.4 - , s212 - IF = 1 mA; f = 2450 MHz - 0.13 - dB All information provided in this , Unit s212 insertion loss IF = 10 mA; f = 900 MHz - 0.07 - dB IF = 10 mA , 900 MHz IF = 100 mA; f = 1800 MHz s212 - 0.128 - dB L charge carrier


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PDF BAP65-02 OD523 sym006
5252 F 0911

Abstract: No abstract text available
Text: =50Ω Freq(MHz) S11 ∠S11 S21ï £¦ ∠S21 S12 ∠S12 S22 ∠S22 , (Common emitter) VCE=1V, IC=10mA, ZO=50Ω Freq(MHz) S11 ∠S11 S21ï £¦ ∠S21 , ) S11 ∠S11 S21ï £¦ ∠S21 S12 ∠S12 S22 ∠S22 200 0.663 , (Common emitter) VCE=1V, IC=20mA, ZO=50Ω Freq(MHz) S11 ∠S11 S21ï £¦ ∠S21 , =50Ω Freq(MHz) S11 ∠S11 S21ï £¦ ∠S21 S12 ∠S12 S22 ∠S22


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PDF 2SC6023 ENN8143 22GHz 5252 F 0911
2010 - Not Available

Abstract: No abstract text available
Text: s212  15.7  dB VR = 0; f = 2450 MHz insertion loss  13.5  dB IF = 0.5 mA; f = 900 MHz  1.84  dB IF = 0.5 mA; f = 1800 MHz s212 ï , ; f = 900 MHz  1.08  dB IF = 1 mA; f = 1800 MHz s212  1.13 ï , 1800 MHz s212  0.36  dB 1.05  s 1.6  nH L , . Tamb = 25 C. Insertion loss s212 of the diode in on-state as a function of frequency


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PDF M3D102 BAP50-05W OT323 MAM382 R77/02/pp8
Not Available

Abstract: No abstract text available
Text: 23.6 22.1 20.6 19.4 S21ï £¦ 10.891 8.137 6.269 4.982 4.152 3.534 3.096 2.762 2.524 , 77.1 72.4 67.5 58.0 48.9 39.3 31.0 25.2 22.0 20.6 19.4 18.1 S21ï £¦ 16.105 10.494 , 18.3 17.1 S21ï £¦ 19.515 11.501 7.973 6.106 4.959 4.188 3.640 3.241 2.933 2.702 2.526 , 28.4 23.0 20.1 18.9 17.5 16.3 S21ï £¦ 19.643 11.260 7.725 5.906 4.789 4.041 3.509 , 79.9 75.2 65.3 55.7 45.4 36.2 29.8 26.1 24.4 23.0 21.6 S21ï £¦ 11.342 8.817 6.951


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PDF MCH4009 ENA0389A 25GHz A038915/15
2012 - Not Available

Abstract: No abstract text available
Text: Conditions Min Typ Max Unit s212 insertion power gain f = 450 MHz - - 18.5 , s212 insertion power gain f = 100 MHz ICC(tot) = 6 mA maximum stable gain 24.5 - , - dB ICC(tot) = 6 mA - 24.5 - dB 150 MHz frequency s212 insertion , 23.0 - dB 450 MHz frequency s212 insertion power gain f = 450 MHz ICC(tot) = , - dB ICC(tot) = 6 mA - 20.5 - dB 900 MHz frequency s212 insertion


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PDF BGU6102 BGU6102 BGU6101, BGU6104)
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