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IRLMS6702TRPBF Infineon Technologies AG Power Field-Effect Transistor, 2.4A I(D), 20V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,

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IRLMS6702TR International Rectifier Bristol Electronics - -
IRLMS6702TR International Rectifier Bristol Electronics 2,400 $0.60 $0.12
IRLMS6702TR International Rectifier New Advantage Corporation - -
IRLMS6702TRPBF International Rectifier Bristol Electronics 7,455 $0.60 $0.08
IRLMS6702TRPBF Infineon Technologies AG Future Electronics 36,000 $0.14 $0.14
IRLMS6702TRPBF Infineon Technologies AG Future Electronics 25 $0.32 $0.16
IRLMS6702TRPBF Infineon Technologies AG Avnet - -
IRLMS6702TRPBF Infineon Technologies AG Newark element14 794 $0.54 $0.21
IRLMS6702TRPBF International Rectifier Bristol Electronics - -
IRLMS6702TRPBF Infineon Technologies AG Avnet 0 $0.13 $0.13
IRLMS6702TRPBF Infineon Technologies AG RS Components 2,250 £0.19 £0.12
IRLMS6702TRPBF Infineon Technologies AG Chip1Stop 24,000 $0.17 $0.17
IRLMS6702TRPBF Infineon Technologies AG Chip1Stop 3,000 $0.29 $0.20
IRLMS6702TRPBF Infineon Technologies AG element14 Asia-Pacific 136 $0.61 $0.17
IRLMS6702TRPBF Infineon Technologies AG element14 Asia-Pacific 136 $0.61 $0.17
IRLMS6702TRPBF Infineon Technologies AG Farnell element14 131 £0.31 £0.15
IRLMS6702TRPBF Infineon Technologies AG Allied Electronics & Automation 0 $0.36 $0.36
IRLMS6702TRPBF Infineon Technologies AG New Advantage Corporation 30,000 $0.23 $0.22

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IRLMS6702 datasheet (7)

Part Manufacturer Description Type PDF
IRLMS6702 International Rectifier HEXFET Power MOSFETs Original PDF
IRLMS6702 International Rectifier HEXFET Power MOSFET Original PDF
IRLMS6702 International Rectifier HEXFET Power MOSFET Original PDF
IRLMS6702 Toshiba Power MOSFETs Cross Reference Guide Original PDF
IRLMS6702TR International Rectifier HEXFET Power MOSFET Original PDF
IRLMS6702TR Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
IRLMS6702TRPBF International Rectifier Original PDF

IRLMS6702 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
smd diode marking 47s

Abstract:
Text: inch square copper board, for comparison with other SMD devices. 3/5/97 IRLMS6702 Electrical , Rectifier IRLMS6702 9 o O 3 CO Ó 2 Q ' V0 S ' Orain-to-Source Voltage-(V 1 10 , Transter Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRLMS6702 International , . Maximum Effective Transient Thermal Impedance. Junction-to-Ambient IRLMS6702 Peak Diode Recovery dv , D.U.T for P-Channel Fig 12. For P-Channel HEXFETS international IQ R Rectifier IRLMS6702


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PDF
1996 - IRLMS6702

Abstract:
Text: Previous Datasheet Index Next Data Sheet PD 9.1414 IRLMS6702 PRELIMINARY HEXFET , Datasheet Index Next Data Sheet IRLMS6702 Electrical Characteristics @ TJ = 25°C (unless otherwise , di/dt = -100A/µs D S Previous Datasheet Index Next Data Sheet IRLMS6702 100 , On-Resistance Vs. Temperature Previous Datasheet Index Next Data Sheet IRLMS6702 10 V GS C is , Voltage To Order Previous Datasheet Index Next Data Sheet IRLMS6702 RD VDS QG


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PDF IRLMS6702 IRLMS6702 Diode SMD ED 98 RK 73 SMD 22AV smd diode marking mp
2004 - IRLMS6702

Abstract:
Text: PD - 91414C IRLMS6702 HEXFET® Power MOSFET l l l l Generation V Technology Micro6 , /04 IRLMS6702 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter , fig. 11 ) TJ 150°C 2 www.irf.com IRLMS6702 100 100 VGS - 7.5V - 5.0V - 4.0V - , . Normalized On-Resistance Vs. Temperature 3 IRLMS6702 400 10 -VGS , Gate-to-Source Voltage (V , ) Fig 8. Maximum Safe Operating Area www.irf.com IRLMS6702 RD V DS QG QGS VGS D.U.T


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PDF 91414C IRLMS6702 EIA-481 EIA-541. IRLMS6702
Not Available

Abstract:
Text: ^51 IRLMS6702 In te rn a tio n a l I O R R ectifier Electrical Characteristics @ Tj = 25 , duty cycle < 2% D 4Ô55452 GD2b2â? ÛRfi inîernat!cr a( IQR Rediger IRLMS6702 100 Ip , . Temperature 4Ö55452 002b2aô 724 IRLMS6702 In te rn a tio n a l TGR R e c tifie r o 2 - , a g e (V) Fig 8. Maximum Safe Operating Area G C^bEaT bbQ IRLMS6702 In te r n a tio n , Transient Thermal Impedance. Junction-to-Ambient 4 Û 5 54 5 2 DDBhe'ìO 3fl2 1000 IRLMS6702 In


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PDF
1997 - Diode SMD ED 9a

Abstract:
Text: PD 9.1414A IRLMS6702 PRELIMINARY HEXFET® Power MOSFET l l Generation V Technology , comparison with other SMD devices. 3/5/97 IRLMS6702 Electrical Characteristics @ TJ = 25°C (unless , duty cycle 2% D S IRLMS6702 100 100 VGS - 7.5V - 5.0V - 4.0V - 3.5V - 3.0V - , . Normalized On-Resistance Vs. Temperature IRLMS6702 10 V GS C is s C rs s C os s = = = = , rain-to-S ource Voltage (V ) Fig 8. Maximum Safe Operating Area IRLMS6702 RD VDS QG VGS


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PDF IRLMS6702 Diode SMD ED 9a marking SH SOT23 mosfet RK 73 SMD MP 9141 MOSFET marking smd NU 702 mosfet smd marking LTA 702 N IRLMS6702 DIODE marking S6 96 smd diode marking mp
1997 - MP 9141

Abstract:
Text: PD - 9.1414B IRLMS6702 HEXFET® Power MOSFET l Generation V Technology Micro6 Package Style , IRLMS6702 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source , -4 board, t 5sec. D S IRLMS6702 100 100 VGS - 7.5V - 5.0V - 4.0V - 3.5V - 3.0V - , . Normalized On-Resistance Vs. Temperature IRLMS6702 10 V GS C is s C rs s C os s = = = = , rain-to-S ource Voltage (V ) Fig 8. Maximum Safe Operating Area IRLMS6702 RD VDS QG VGS


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PDF 1414B IRLMS6702 MP 9141 ze 003 driver LTA 702 N EE 16A transformer IRLMS6702 MARKING tAN sot MARKING tAN SOT-23
C645 diode

Abstract:
Text: C-645 IRLMS6702 Electrical Characteristics @ T j = 25°C (unless otherwise specified) Parameter , mounted on FR-4 board, t < 5sec. C -646 www.irf.com International Iö R Rectifier IRLMS6702 , IRLMS6702 international IOR Rectifier 0 2 4 6 8 10 -VDS , Drain-to-Source Voltage (V , Area www.irf.com International IG R Rectifier IRLMS6702 t1 , Rectangular Pulse Duration


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PDF 1414B I100M IRLMS6702 C645 diode Diode C645 part marking mwrc
smd code 9fc

Abstract:
Text: with other SMD devices. 3/21/96 IRLMS6702 Electrical Characteristics Q Tj = 25°C (unie , £ 300ps - duty cycle <=2% IRLMS6702 -I D , Drain-to-Source Current (A) 0.1 1 10 , IRLMS6702 EH3 2 4 6 8 10 -V qS , D rain-to-Source Voltage (V) Q g , Total G ate , . Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area IQ R IRLMS6702 , Transient Thermal Impedance, Junction-to-Ambient IRLMS6702 Peak Diode Recovery dv/dt Test Circuit


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PDF S6702 OT-23. BA-481 EIA-541. smd code 9fc smd 2d 1002 -reel mosfet ir 840 smd diode 2d SOT-23 marking 2f p-Channel sot-23 MARKING CODE nm
Not Available

Abstract:
Text: PD - 91414C IRLMS6702 HEXFET® Power MOSFET l l l l Generation V Technology Micro6 , Units 75 °C/W 1 3/18/04 IRLMS6702 Electrical Characteristics @ TJ = 25°C (unless , . www.irf.com IRLMS6702 100 100 VGS - 7.5V - 5.0V - 4.0V - 3.5V - 3.0V - 2.5V - 2.0V BOTTOM , On-Resistance Vs. Temperature 3 IRLMS6702 400 10 -VGS , Gate-to-Source Voltage (V) V GS = 0V , ) Fig 8. Maximum Safe Operating Area www.irf.com IRLMS6702 RD V DS QG VGS -4.5V QGD


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PDF 91414C IRLMS6702 EIA-481 EIA-541.
2014 - Not Available

Abstract:
Text: ) 62 160 Tr1 : CPH6315 (P-ch MOSFET : SANYO), IRLMS6702 (P-ch MOSFET : IR) Tr2 : CPH3409 (N-ch , ƒ©ãƒ³ã‚¸ã‚¹ã‚¿ (P-ch MOSFET) 品 番 CPH6315 CPH3308 IRLMS6702 メーカー SANYO SANYO IR , ) FOSC=300kHz, VOUT=3.3V L=22μH(CDRH127/LD), CL=94Fμ(Tantalum),SD:CMS02 Tr1: IRLMS6702 , Tr2:IRLMS1902 , =300kHz, VOUT=3.3V L=22μH(CDRH127/LD), CL=94μF(Tantalum),SD:CMS02 Tr1: IRLMS6702 , Tr2:IRLMS1902, Tr3 , =22μH(CDRH127/LD), CL=94μF(Tantalum),SD:CMS02 Tr1: IRLMS6702 , Tr2:IRLMS1902, Tr3:IRLML2502 L=22μH(CDRH127


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PDF XC9303 JTR0602-005 XC9303ã
2010 - CMS02

Abstract:
Text: 160 Tr1: Tr2: Tr3: Note: CPH6315 (P-ch MOSFET: SANYO), IRLMS6702 (P-ch MOSFET: IR) CPH3409 , 0.98±0.1 TRANSISTOR (P-ch MOSFET) PART NUMBER MANUFACTURER CPH6315 CPH3308 IRLMS6702 SANYO SANYO , =3.3V L=22H(CDRH127/LD), CL=94F(Tantalum),SD:CMS02 Tr1: IRLMS6702 , Tr2:IRLMS1902, Tr3:IRLML2502 VIN , L=22H(CDRH127/LD), CL=94F(Tantalum),SD:CMS02 Tr1: IRLMS6702 , Tr2:IRLMS1902, Tr3:IRLML2502 100 , =94F(Tantalum),SD:CMS02 Tr1: IRLMS6702 , Tr2:IRLMS1902, Tr3:IRLML2502 100 4.2V 80 100 FOSC


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PDF XC9303 ETR0602 CMS02 CPH3409 CPH6315 IRLML2502 chip MOSFET 50V 100A Transistor irlml2502
2004 - Not Available

Abstract:
Text: ), IRLMS6702 (P-ch MOSFET : IR) CPH3409 (N-ch MOSFET : SANYO), IRLMS1902 (N-ch MOSFET : IR) CPH3409 (N-ch , NUMBER MANUFACTURER CPH6315 CPH3308 IRLMS6702 SANYO SANYO IR ABSOLUTE MAX. RATINGS VDSS (V , =3.3V L=22μH(CDRH127/LD), CL=94Fμ(Tantalum),SD:CMS02 Tr1: IRLMS6702 , Tr2:IRLMS1902, Tr3:IRLML2502 3.5 , IOUT (mA) FOSC=300kHz, VOUT=3.3V L=22μH(CDRH127/LD), CL=94μF(Tantalum),SD:CMS02 Tr1: IRLMS6702 , =94μF(Tantalum),SD:CMS02 Tr1: IRLMS6702 , Tr2:IRLMS1902, Tr3:IRLML2502 100 4.2V 80 100 FOSC


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PDF 300kHz XC9303B093K 300kHing 300mA XC9303 XC9303
2007 - 94uF

Abstract:
Text: ) 75 18 CFB1 (pF) 62 160 Tr1: Tr2: Tr3: Note: CPH6315 (P-ch MOSFET: SANYO), IRLMS6702 , CPH6315 CPH3308 IRLMS6702 SANYO SANYO IR ABSOLUTE MAX. RATINGS Rds(ON) MAX.(m) Ciss TYP. (pF , =300kHz, VOUT=3.3V L=22H(CDRH127/LD), CL=94F(Tantalum),SD:CMS02 Tr1: IRLMS6702 , Tr2:IRLMS1902, Tr3:IRLML2502 , 1000 10000 L=22H(CDRH127/LD), CL=94F(Tantalum),SD:CMS02 Tr1: IRLMS6702 , Tr2:IRLMS1902, Tr3 , /LD), CL=94F(Tantalum),SD:CMS02 Tr1: IRLMS6702 , Tr2:IRLMS1902, Tr3:IRLML2502 100 4.2V 80


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PDF XC9303 ETR0602 94uF CMS02 CPH3409 CPH6315 MOSFET 50V 100A TOSHIBA DIODE CATALOG toshiba Transistors catalog
2005 - Not Available

Abstract:
Text: : CPH6315 (P-ch MOSFET: SANYO), IRLMS6702 (P-ch MOSFET: IR) CPH3409 (N-ch MOSFET: SANYO), IRLMS1902 (N-ch , ●TRANSISTOR (P-ch MOSFET) PART NUMBER MANUFACTURER CPH6315 CPH3308 IRLMS6702 SANYO SANYO IR , =3.3V L=22μH(CDRH127/LD), CL=94Fμ(Tantalum),SD:CMS02 Tr1: IRLMS6702 , Tr2:IRLMS1902, Tr3:IRLML2502 VIN , =22μH(CDRH127/LD), CL=94μF(Tantalum),SD:CMS02 Tr1: IRLMS6702 , Tr2:IRLMS1902, Tr3:IRLML2502 100 80 70 , =94μF(Tantalum),SD:CMS02 Tr1: IRLMS6702 , Tr2:IRLMS1902, Tr3:IRLML2502 100 4.2V 80 100 FOSC


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PDF 300kHz XC9303 300kH, 20mV/div 300kHz, 300mA, 230mA
2003 - IRLM6702

Abstract:
Text: MANUFACTURER CPH6315 CPH3308 IRLMS6702 SANYO SANYO IR ABSOLUTE MAX. RATINGS VDSS (V) VGSS (V) ID , =94uF(Tantalum),SD:CMS02 Tr1: IRLMS6702 , Tr2:IRLMS1902, Tr3:IRLML2502 Output Voltage VOUT (V) 3.5 PWM/PFM , : IRLMS6702 , Tr2:IRLMS1902, Tr3:IRLML2502 Efficiency EFFI (%) 100 90 PWM/PFM Switching Control PWM , /LD), CL=94uF(Tantalum),SD:CMS02 Tr1: IRLMS6702 , Tr2:IRLMS1902, Tr3:IRLML2502 L=22uH(CDRH127/LD), CL=94uF(Tantalum),SD:CMS02 Tr1: IRLMS6702 , Tr2:IRLMS1902, Tr3:IRLML2502 100 100 PWM Control


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PDF XC9303 300kHz, 20mV/div 300mA 230mA IRLM6702 irlm2502 IRLM1902 swiching power pwm circuits CPH3409 RFB11 MSOP-8 PFM light load CPH6315 CMS02
GC 72 smd diode

Abstract:
Text: Information Micros EXAMPLE : THIS IS AN IRLMS6702 3 C| = 5 »RT NUMBER TaC YWf y W *F E A LOT N '.U , ; ¿5 1 X Y PART jM B E R EXAMPLES: H . IRLMS1902 ¡5 «IRLM S1503 > IRLMS6702 : : . IR IM S5703


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PDF 1413C IRLMS5703 OT-23. GC 72 smd diode smd code marking gC SOT-23 bad sot23 MARKING tAN SOT-23 diode smd 1p sot-23 smd diode marking 1P smd marking gc diode
IRLMS6803

Abstract:
Text: Micro6 (SOT-23 6L) PART NUMBER W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR WORK YEAR Y WEEK W n n n Y = YEAR n n \Jei w = WEEK AYWLC TOP LOT CODE 2001 2002 2003 2004 2005 1996 1997 1998 1999 2000 1 2 3 4 5 6 7 8 9 0 01 02 03 04 24 25 26 A B C D X Y Z PART NUMBER CODE REFERENCE: A = IRLMS1902 B = IRLMS1503 C = IRLMS6702 D = IRLMS5703 E = IRLMS6802 F = IRLMS4502 G = IRLMS2002 H = IRLMS6803 W = (27-52) IF PRECEDED BY A LETTER YEAR Y 2001 2002 2003 2004


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PDF OT-23 IRLMS1902 IRLMS1503 IRLMS6702 IRLMS5703 IRLMS6802 IRLMS4502 IRLMS2002 IRLMS6803 IRLMS6803
IRLMS6803

Abstract:
Text: Micro6 (SOT-23 6L) W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR YEAR Y = YEAR W = WEEK PART NUMBER TOP LOT CODE Y 2001 2002 2003 2004 2005 1996 1997 1998 1999 2000 1 2 3 4 5 6 7 8 9 0 WORK WEEK W 01 02 03 04 A B C D 24 25 26 X Y Z PART NUMBER CODE REFERENCE: A = IRLMS1902 B = IRLMS1503 C = IRLMS6702 D = IRLMS5703 E = IRLMS6802 F = IRLMS4502 G = IRLMS2002 H = IRLMS6803 W = (27-52) IF PRECEDED BY A LETTER


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PDF OT-23 IRLMS1902 IRLMS1503 IRLMS6702 IRLMS5703 IRLMS6802 IRLMS4502 IRLMS2002 IRLMS6803 IRLMS6803 j y w sot23 IRLMS1503 IRLMS6802 IRLMS6702 IRLMS5703 IRLMS4502 IRLMS2002 IRLMS1902 h d 2001
2005 - Not Available

Abstract:
Text: (P-ch MOSFET: SANYO), IRLMS6702 (P-ch MOSFET: IR) EXT2: CPH3409 (N-ch MOSFET: SANYO), IRLMS1902 (P-ch , (V) VGSS (V) ID (A) CPH6315 SANYO - 20 ±10 - 3.0 CPH3308 SANYO - 30 ±20 - 4.0 IRLMS6702 , =94μF(Tantalum) Tr1: IRLMS6702 , Tr2:IRLMS1902 1.2 1.1 VIN=2.7V,3.3V,4.2V 1.0 5.0 4.9 VIN , : IRLMS6702 , Tr2:IRLMS1902 100 L=22μH(CDRH125), CL=94μF(Tantalum) Tr1: IRLMS6702 , Tr2:IRLMS1902 100 , =300kHz, VOUT=1.2V L=22μH(CDRH125), C L=94μF(Tantalum) Tr1: IRLMS6702 , Tr2:IRLMS1902 100 L


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PDF 300kHz XC9210 300mA 1000mA XC9210
2009 - Transistor irlml2502

Abstract:
Text: 160 Tr1: Tr2: Tr3: Note: CPH6315 (P-ch MOSFET: SANYO), IRLMS6702 (P-ch MOSFET: IR) CPH3409 , 0.98±0.1 TRANSISTOR (P-ch MOSFET) PART NUMBER MANUFACTURER CPH6315 CPH3308 IRLMS6702 SANYO SANYO , =3.3V L=22H(CDRH127/LD), CL=94F(Tantalum),SD:CMS02 Tr1: IRLMS6702 , Tr2:IRLMS1902, Tr3:IRLML2502 VIN , L=22H(CDRH127/LD), CL=94F(Tantalum),SD:CMS02 Tr1: IRLMS6702 , Tr2:IRLMS1902, Tr3:IRLML2502 100 , =94F(Tantalum),SD:CMS02 Tr1: IRLMS6702 , Tr2:IRLMS1902, Tr3:IRLML2502 100 4.2V 80 100 FOSC


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PDF XC9303 ETR0602 Transistor irlml2502 CPH3409 16MCE476MD2 SANYO PACKAGE DESIGNATOR MCE PB IRLML2502 chip CPH6315 CMS02 94uF
0050II

Abstract:
Text: Marking Information Micro6 EXAMPLE : THIS IS AN IRLMS6702 PART NUMBER . R n R DATE CODE YEAR , IRLMS1503 2C = IRLMS6702 2D = IRLMS5703 T 24 25 26 ' 2000 DATE CODE EXAMPLES: YW W = 9603 = 6C


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PDF -91848B IRLMS6802 OT-23. 0050II MO-15 72RD mosfet ir 840
SMD MARKING CODE C17

Abstract:
Text: Information Micros EXAMPLE : THIS IS AN IRLMS6702 PART NUMBER R ñ R YEAR 2001 WORK WEEK 01 02 03 04 , IRLMS1902 20 s IRLMS1S03 2C · IRLMS6702 20 · IRLMSS703 DATE CODE EXAMPLES: YWW 9603 6C YWW · 9632 · FF


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PDF OT-23. EIA-411 SMD MARKING CODE C17 MARKING MON sot-23 HG marking sot23 IRLMSS703 l00a marking code 6c SMD smd diode marking hg
2004 - Not Available

Abstract:
Text: : CPH6315 (P-ch MOSFET : SANYO), IRLMS6702 (P-ch MOSFET : IR) EXT2 : CPH3409 (N-ch MOSFET : SANYO , ●TRANSISTOR (P-ch MOSFET) PART NUMBER MANUFACTURER CPH6315 CPH3308 IRLMS6702 IRLMS5703 SANYO SANYO , =94μF(Tantalum) Tr1: IRLMS6702 , Tr2:IRLMS1902 1.2 1.1 VIN=2.7V,3.3V,4.2V 1.0 5.0 4.9 VIN , : IRLMS6702 , Tr2:IRLMS1902 100 L=22μH(CDRH125), CL=94μF(Tantalum) Tr1: IRLMS6702 , Tr2:IRLMS1902 100 , =300kHz, VOUT=1.2V L=22μH(CDRH125), C L=94μF(Tantalum) Tr1: IRLMS6702 , Tr2:IRLMS1902 100 L


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PDF 300kHz XC9210 300mA 1000mA XC9210
2007 - Not Available

Abstract:
Text: (P-ch MOSFET: SANYO), IRLMS6702 (P-ch MOSFET: IR) EXT2: CPH3409 (N-ch MOSFET: SANYO), IRLMS1902 (P-ch , (V) VGSS (V) ID (A) CPH6315 SANYO - 20 ±10 - 3.0 CPH3308 SANYO - 30 ±20 - 4.0 IRLMS6702 , OUT (V) FOSC=300kHz, VOUT=5.0V L=22μH(CDRH125), CL=94μF(Tantalum) Tr1: IRLMS6702 , Tr2 , =300kHz, VOUT=1.2V FOSC=300kHz, VOUT=1.2V L=22μH(CDRH125), CL=94μF(Tantalum) Tr1: IRLMS6702 , Tr2:IRLMS1902 100 L=22μH(CDRH125), CL=94μF(Tantalum) Tr1: IRLMS6702 , Tr2:IRLMS1902 100 Synchronous PWM


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PDF 300kHz XC9210
2004 - Not Available

Abstract:
Text: Low Input Voltage (2.0V IRLMS6702 : CPH3409 : IRLMS1902 , - 4.0 140@Vds= - 4.0V 560@Vdc= - 10V - 2.4 (MAX.) CPH3 MOSFET IRLMS6702 IR - , =22uH(CDRH125), CL=94uF(Tantalum ) Tr1: IRLMS6702 , Tr2:IRLMS1902 Synchronous PWM Control PWM /PFM Switching , ) FOSC=300kHz, VOUT =1.2V L=22uH(CDRH125), CL=94uF(Tantalum ) Tr1: IRLMS6702 , Tr2:IRLMS1902 100 L=22uH(CDRH125), CL=94uF(Tantalum ) Tr1: IRLMS6702 , Tr2:IRLMS1902 100 Synchronous PWM Control


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PDF XC9210 300kHz 300kHz, 10mV/div 300mA 1000mA
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