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IRLMS5703TRPBF Infineon Technologies AG Power Field-Effect Transistor, 2.4A I(D), 30V, 0.18ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
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IRLMS5703 datasheet (9)

Part Manufacturer Description Type PDF
IRLMS5703 International Rectifier HEXFET Power MOSFET Original PDF
IRLMS5703 International Rectifier HEXFET Power MOSFET Original PDF
IRLMS5703 Toshiba Power MOSFETs Cross Reference Guide Original PDF
IRLMS5703TR International Rectifier -30V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package Original PDF
IRLMS5703TR International Rectifier HEXFET Power MOSFET Original PDF
IRLMS5703TR International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, P-Channel, Power, -30V, -1.6A, Pkg Style Micro6 Scan PDF
IRLMS5703TR Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
IRLMS5703TRPBF International Rectifier FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 2.4A 6-TSOP Original PDF
IRLMS5703TRPBF International Rectifier Original PDF

IRLMS5703 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
C641

Abstract: No abstract text available
Text: ) P-Channel MOSFET PD - 9.1413D IRLMS5703 HEXFET® Power MOSFET Vdss = "30V RDS(on) = 0.20Q , R Rectifier IRLMS5703 Electrical Characteristics @ T j = 25°C (unless otherwise specified , ; duty cycle < 2%. ® Surface mounted on FR-4 board, t < 5sec. www.irf.com C-641 IRLMS5703 , IRLMS5703 0 2 4 6 8 10 12 -VDS , Drain-to-Source Voltage (V) Q G, Total Gate , Voltage www.irf.com Fig 8. Maximum Safe Operating Area C -643 IRLMS5703 International ICüR


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PDF 1413D IRLMS5703 OT-23. 100ps C641
GC 72 smd diode

Abstract: smd code marking gC SOT-23 smd marking gc diode bad sot23 smd 1p sot-23 smd diode marking 1P MARKING tAN SOT-23 diode
Text: ) P-Channel MOSFET PD - 9.1413C PRELIMINARY IRLMS5703 HEXFET® Power MOSFET Vqss = *30V Description , _ IQ R Rectifier IRLMS5703 Electrical Characteristics @ Tj = 25°C (unless otherwise specified , 0 0 m s : duty cycle s 2%. International i Rectifier, IRLMS5703 .I q _ßrain-to-Source , On-Resistance Vs. Temperature IRLMS5703 Internaiional IO R Rectifier C, Capacitance (pF) 0 ·VDS . , IRLMS5703 Internariond ICR Rectifier Peak Diode Recovery dv/dt Test Circuit © Driver Gate Drive


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PDF 1413C IRLMS5703 OT-23. GC 72 smd diode smd code marking gC SOT-23 smd marking gc diode bad sot23 smd 1p sot-23 smd diode marking 1P MARKING tAN SOT-23 diode
Not Available

Abstract: No abstract text available
Text: PD - 9.1413C International Iö R Rectifier IRLMS5703 PRELIMINARY HEXFET® Power MOSFET , . 3/5/97 4Ô55452 □G2bS7â ÔÔS IRLMS5703 International IQ R Rectifier , IRLMS5703 Drain-to-Source Current (A) IO R Rectifier ■VqS' Drain-to-Source Voltage (V) ■VqS , 4Ô5S452 QQ2b2f l G 433 IRLMS5703 C, Capacitance (pF) In fe rn a iio n a l IO R Rectifier , ODEbEö E EDb 1000 IRLMS5703 Internarional IQR Rectifier Peak Diode Recovery dv/dt Test


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PDF 1413C IRLMS5703 SS45B
1997 - Micro6 Package

Abstract: IRLMS5703
Text: PD - 91413E IRLMS5703 HEXFET® Power MOSFET l l l l Generation V Technology Micro6 , IRLMS5703 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS/TJ Parameter , (BR)DSS , TJ 150°C Surface mounted on FR-4 board, t 5sec. D S IRLMS5703 100 100 , emperature (°C) Fig 4. Normalized On-Resistance Vs. Temperature IRLMS5703 V GS C is s C rs s C os , Operating Area 100 IRLMS5703 RD VDS QG VGS -10V QGD D.U.T. - QGS RG +


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PDF 91413E IRLMS5703 EIA-481 EIA-541. Micro6 Package IRLMS5703
IRLMS5703

Abstract: No abstract text available
Text: PD - 91413E IRLMS5703 HEXFET® Power MOSFET l l l l Generation V Technology Micro6 , IRLMS5703 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS/TJ Parameter , (BR)DSS , TJ 150°C Surface mounted on FR-4 board, t 5sec. D S IRLMS5703 100 100 , emperature (°C) Fig 4. Normalized On-Resistance Vs. Temperature IRLMS5703 V GS C is s C rs s C os , Operating Area 100 IRLMS5703 RD VDS QG VGS -10V QGD D.U.T. - QGS RG +


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PDF 91413E IRLMS5703 EIA-481 EIA-541. IRLMS5703
1997 - LTA 702 N

Abstract: ze 003 driver MP 9141 Lm 304 PN mp 315 IRLMS5703
Text: PD - 9.1413D IRLMS5703 HEXFET® Power MOSFET l l l l Generation V Technology Micro6 , IRLMS5703 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS/TJ Parameter , (BR)DSS , TJ 150°C Surface mounted on FR-4 board, t 5sec. D S IRLMS5703 100 100 , emperature (°C) Fig 4. Normalized On-Resistance Vs. Temperature IRLMS5703 V GS C is s C rs s C os , Operating Area 100 IRLMS5703 RD VDS QG VGS -10V QGD D.U.T. - QGS RG +


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PDF 1413D IRLMS5703 LTA 702 N ze 003 driver MP 9141 Lm 304 PN mp 315 IRLMS5703
1997 - smd diode marking LM

Abstract: IRLMS5703 702 mosfet smd marking Diode smd s6 95
Text: PD - 9.1413C IRLMS5703 PRELIMINARY HEXFET® Power MOSFET l l l l Generation V , . 3/5/97 IRLMS5703 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS , %. D S IRLMS5703 100 100 VGS - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTT , . Temperature IRLMS5703 V GS C is s C rs s C os s C , C a p a c ita n c e (p F ) 300 = = = = , rain-to-S ource Voltage (V ) Fig 8. Maximum Safe Operating Area 100 IRLMS5703 RD VDS QG


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PDF 1413C IRLMS5703 smd diode marking LM IRLMS5703 702 mosfet smd marking Diode smd s6 95
1997 - diode smd ED 84

Abstract: EE 16A transformer ze 003 driver DIODE marking S6 89 IRLMS5703 3V REGULATOR SOT-23 smd marking 702 sot23 MOSFET marking smd NU 20mH SMD INDUCTOR
Text: Previous Datasheet Index Next Data Sheet PD - 9.1413B IRLMS5703 PRELIMINARY HEXFET , Previous Datasheet Index Next Data Sheet IRLMS5703 Electrical Characteristics @ TJ = 25°C (unless , Data Sheet IRLMS5703 100 100 VGS - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTT , 120 140 160 Previous Datasheet Index Next Data Sheet IRLMS5703 V GS C is s C rs s C , Operating Area To Order 100 Previous Datasheet Index Next Data Sheet IRLMS5703 RD VDS


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PDF 1413B IRLMS5703 diode smd ED 84 EE 16A transformer ze 003 driver DIODE marking S6 89 IRLMS5703 3V REGULATOR SOT-23 smd marking 702 sot23 MOSFET marking smd NU 20mH SMD INDUCTOR
IRLMS6803

Abstract: j y w sot23 IRLMS1503 IRLMS6802 IRLMS6702 IRLMS5703 IRLMS4502 IRLMS2002 IRLMS1902 h d 2001
Text: Micro6 (SOT-23 6L) W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR YEAR Y = YEAR W = WEEK PART NUMBER TOP LOT CODE Y 2001 2002 2003 2004 2005 1996 1997 1998 1999 2000 1 2 3 4 5 6 7 8 9 0 WORK WEEK W 01 02 03 04 A B C D 24 25 26 X Y Z PART NUMBER CODE REFERENCE: A = IRLMS1902 B = IRLMS1503 C = IRLMS6702 D = IRLMS5703 E = IRLMS6802 F = IRLMS4502 G = IRLMS2002 H = IRLMS6803 W = (27-52) IF PRECEDED BY A LETTER


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PDF OT-23 IRLMS1902 IRLMS1503 IRLMS6702 IRLMS5703 IRLMS6802 IRLMS4502 IRLMS2002 IRLMS6803 IRLMS6803 j y w sot23 IRLMS1503 IRLMS6802 IRLMS6702 IRLMS5703 IRLMS4502 IRLMS2002 IRLMS1902 h d 2001
2005 - Not Available

Abstract: No abstract text available
Text: : SANYO), IRLMS5703 (P-ch MOSFET: IR) EXT2: CPH3408 (N-ch MOSFET: SANYO), IRLMS1503 (P-ch MOSFET: IR , IR - 20 ±12 - 2.3 IRLMS5703 IR - 30 ±20 - 2.3 ●TRANSISTOR (N-ch MOSFET) PART ABSOLUTE , =1.2V 1.4 L=22μH(CDRH125), C L=94μF(Tantalum) Tr1: IRLMS5703 , Tr2:IRLMS1503 5.2 Synchronous PWM , =94μF(Tantalum) Tr1: IRLMS5703 , Tr2:IRLMS1503 100 L=22μH(CDRH125), CL=94μF(Tantalum) Tr1: IRLMS5703 , Tr2 , 10000 0.1 1 Output Current IOUT (mA) L=22μH(CDRH125), C L=94μF(Tantalum) Tr1: IRLMS5703


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PDF 300kHz XC9210 300mA 1000mA XC9210
IRLMS6803

Abstract: IRLMS1503 IRLMS1902 IRLMS2002 IRLMS4502 IRLMS5703 IRLMS6702 IRLMS6802
Text: Micro6 (SOT-23 6L) PART NUMBER W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR WORK YEAR Y WEEK W n n n Y = YEAR n n \Jei w = WEEK AYWLC TOP LOT CODE 2001 2002 2003 2004 2005 1996 1997 1998 1999 2000 1 2 3 4 5 6 7 8 9 0 01 02 03 04 24 25 26 A B C D X Y Z PART NUMBER CODE REFERENCE: A = IRLMS1902 B = IRLMS1503 C = IRLMS6702 D = IRLMS5703 E = IRLMS6802 F = IRLMS4502 G = IRLMS2002 H = IRLMS6803 W = (27-52) IF PRECEDED BY A LETTER YEAR Y 2001 2002 2003 2004


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PDF OT-23 IRLMS1902 IRLMS1503 IRLMS6702 IRLMS5703 IRLMS6802 IRLMS4502 IRLMS2002 IRLMS6803 IRLMS6803
2008 - Not Available

Abstract: No abstract text available
Text: ‰¦ 10.0V, IOUT ≦ 2A) EXT1 : CPH3308 (P-ch MOSFET : SANYO), IRLMS5703 (P-ch MOSFET : IR) EXT2 : CPH3408 , メーカー CPH6315 CPH3308 IRLMS6702 IRLMS5703 SANYO SANYO IR IR VDSS (V) - 20 - 30 - 20 , : IRLMS5703 , Tr2:IRLMS1503 5.2 Synchronous PWM Control PWM/PFM Switching Control 1.3 Output Voltage , =22μH(CDRH125), CL=94μF(Tantalum) L=22μH(CDRH125), CL=94μF(タンタル) Tr1: IRLMS5703 , Tr2:IRLMS1503 100 L=22μH(CDRH125), CL=94μF(Tantalum) L=22μH(CDRH125), CL=94μF(タンタル) Tr1: IRLMS5703


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PDF XC9210 JTR0504-002 XC9210ã 300kHzã 180kHzã
2004 - Not Available

Abstract: No abstract text available
Text: (P-ch MOSFET : SANYO), IRLMS5703 (P-ch MOSFET : IR) EXT2 : CPH3408 (N-ch MOSFET : SANYO), IRLMS1503 , ●TRANSISTOR (P-ch MOSFET) PART NUMBER MANUFACTURER CPH6315 CPH3308 IRLMS6702 IRLMS5703 SANYO SANYO , =1.2V 1.4 L=22μH(CDRH125), C L=94μF(Tantalum) Tr1: IRLMS5703 , Tr2:IRLMS1503 5.2 Synchronous PWM , =94μF(Tantalum) Tr1: IRLMS5703 , Tr2:IRLMS1503 100 L=22μH(CDRH125), CL=94μF(Tantalum) Tr1: IRLMS5703 , Tr2 , 10000 0.1 1 Output Current IOUT (mA) L=22μH(CDRH125), C L=94μF(Tantalum) Tr1: IRLMS5703


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PDF 300kHz XC9210 300mA 1000mA XC9210
2004 - Not Available

Abstract: No abstract text available
Text: : CPH3308 : IRLMS5703 : CPH3408 : IRMS1503 EXT2 High Input Voltage (5.0V IRLMS5703 IR , Control OUT (V) 1.3 L=22uH(CDRH125), C L =94uF(Tantalum ) Tr1: IRLMS5703 , Tr2:IRLMS1503 5.2 , : IRLMS5703 , Tr2:IRLMS1503 100 1 L=22uH(CDRH125), CL=94uF(Tantalum ) Tr1: IRLMS5703 , Tr2:IRLNS1503 , =94uF(Tantalum ) Tr1: IRLMS5703 , Tr2:IRLMS1503 100 L=22uH(CDRH125), C L =94uF(Tantalum ) Tr1


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PDF XC9210 300kHz 300kHz, 10mV/div 300mA 1000mA
2007 - Not Available

Abstract: No abstract text available
Text: : SANYO), IRLMS5703 (P-ch MOSFET: IR) EXT2: CPH3408 (N-ch MOSFET: SANYO), IRLMS1503 (P-ch MOSFET: IR , IR - 20 ±12 - 2.3 IRLMS5703 IR - 30 ±20 - 2.3 ●TRANSISTOR (N-ch MOSFET) PART ABSOLUTE , ) Tr1: IRLMS5703 , Tr2:IRLMS1503 5.2 Synchronous PWM Control PWM/PFM Switching Control , : IRLMS5703 , Tr2:IRLMS1503 100 L=22μH(CDRH125), CL=94μF(Tantalum) Tr1: IRLMS5703 , Tr2:IRLNS1503 100 , Current IOUT (mA) L=22μH(CDRH125), C L=94μF(Tantalum) Tr1: IRLMS5703 , Tr2:IRLMS1503 Synchronous


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PDF 300kHz XC9210
1998 - 824 mosfet

Abstract: n-channel mosfet vgs 3v P-Channel MOSFET 600v P-channel IRF7307 IRF7205 IRLMS1503 irf7204 IRLML5103 IRLML2402
Text: Average 2 IRLML5103 IRLML6302 30V P-channel IRLML2402 IRLML2803 IRLMS6702 IRLMS5703


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PDF 97-2J MIL-STD-750C IRF7503 IRF7603 IRF7509RF7503 IRF7506 RF7507IRF7501 IRF7504 824 mosfet n-channel mosfet vgs 3v P-Channel MOSFET 600v P-channel IRF7307 IRF7205 IRLMS1503 irf7204 IRLML5103 IRLML2402
2003 - MSPO8A

Abstract: IRLMS1503 CDRH125 CPH3308 CPH3408 XC9210
Text: : CPH3308 (Pch MOSFET : SANYO), IRLMS5703 (Pch MOSFET : IR) EXT2: CPH3408 (Nch MOSFET : SANYO), IRLMS1503 , IRLMS6702 IRLMS5703 SANYO SANYO IR IR ABSOLUTE MAX. RATINGS VDSS (V) VGSS (V) ID (A) ±10 - 20 , =300kHz, VOUT=5.0V L=22uH(CDRH125), C L=94uF(Tantalum) Tr1: IRLMS5703 , Tr2:IRLMS1503 L=22uH(CDRH125), CL , =5.0V L=22uH(CDRH125), CL=94uF(Tantalum) Tr1: IRLMS5703 , Tr2:IRLMS1503 L=22uH(CDRH125), CL=94uF(Tantalum) Tr1: IRLMS5703 , Tr2:IRLNS1503 100 100 Synchronous PWM Control 80 Efficiency EFFI (%


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PDF XC9210 300kHz 300kHz, 10mV/div 300mA 1000mA MSPO8A IRLMS1503 CDRH125 CPH3308 CPH3408
IRLMS6803

Abstract: IRLMS1902 IRLMS2002 IRLMS4502 IRLMS5703 IRLMS6702 58AV
Text: CODE REFERENCE: A = IRLMS1902 B = IRLMS 1503 C = IRLMS6702 D = IRLMS5703 E = IRLMS 6802 F =


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PDF IRLMS1503PbF leadframe01 EIA-481 EIA-541. IRLMS6803 IRLMS1902 IRLMS2002 IRLMS4502 IRLMS5703 IRLMS6702 58AV
LL110

Abstract: IRF7423 IRFR1205 equivalent IRLR2905 SMD 3F smd transistor IRF7389 irf7309 IRLR024N irlms4502 IRFR5410
Text: IRLMS5703 91413 IRF7506/9 91268/70 IRF9953/IRF9952 91560/91561 IRF7306 91242 IRF7309/IRF7379


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PDF IRLML6401 IRLMS4502 OT-223 IRF7220 IRL3102S IRL3402S IRL3502S RF830S* IRFR420 IRF820S LL110 IRF7423 IRFR1205 equivalent IRLR2905 SMD 3F smd transistor IRF7389 irf7309 IRLR024N irlms4502 IRFR5410
1998 - LL110

Abstract: IRFR1205 equivalent IRLR2905 SMD IRLL014N IRF7341 application note IRF7389 irf7301 International Rectifier, IRFR9220 datasheet IRFR5505 SMD IRF7319
Text: 91746 5/98 9/98 Y IRLML5103 91260 IRLMS5703 91413 IRF7506/9 91268/70 IRF9953/IRF9952


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PDF OT-223 IRLML2402 IRL3302S IRL3202S IRL3102S IRL3402S IRL3502S -250V IRFR214 IRF614S LL110 IRFR1205 equivalent IRLR2905 SMD IRLL014N IRF7341 application note IRF7389 irf7301 International Rectifier, IRFR9220 datasheet IRFR5505 SMD IRF7319
1999 - LL110

Abstract: IRF7207 IRF7342 IRFR024N IRF7317 IRF micro3 IRL32 iRF 0420 irFR5305 IRFR9024
Text: IRF7805 91746 IRF7811 5/99 7/99 IRF7809 5/99 7/99 IRL2203NS 91367 IRL3803S 91319 IRLML5103 91260 IRLMS5703


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PDF IRF7233 IRF7220 OT-223 IRLML2402 IRF7501/7 IRLMS1902 IRF7210 -400V IRF840S* IRF830S* LL110 IRF7207 IRF7342 IRFR024N IRF7317 IRF micro3 IRL32 iRF 0420 irFR5305 IRFR9024
IRLMS6803

Abstract: 6x marking sot-23 p-channel IRLMS1503 IRLMS1902 IRLMS5703 IRLMS6702 IRLMS6802
Text: = E= F= G= H= IRLMS1902 IRLMS1503 IRLMS6702 IRLMS5703 IRLMS6802 IRLMS4502 IRLMS2002


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PDF IRLMS6802PbF OT-23. EIA-481 EIA-541. IRLMS6803 6x marking sot-23 p-channel IRLMS1503 IRLMS1902 IRLMS5703 IRLMS6702 IRLMS6802
1998 - irlml2404

Abstract: IRF7603 transistor 9529 IRF7389 irlml2402 Small-Outline SMD Reliability Report IRF7103 IR 9515 datasheet HEXFET SO-8 704618
Text: , VDSS(max) = 30 V, IRLMS5703 , VDSS(max) = - 30 V IRLMS1902, VDSS(max) = 20 V IRLMS6702, VDSS(max) = , nA µA V V m m Table II-N part type IRLMS5703 (Micro6) Symbol Definition Applied , with Gate Oxide of 450 Å Part Number IRF7506 IRF7606 IRF7606 IRLMS5703 IRLML5103 IRF7321D2 , Part Number IRLMS6702 IRLMS5703 IRLMS5703 IRLML5103 IRF7504 IRF7506 IRF7504 IRF7606 IRF7404 , Bias (85 °C/ 85% RH) 1) P-channel Device Part Number IRLMS6702 IRLMS5703 IRLMS5703 IRLML5103


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PDF
2003 - irlms4502

Abstract: IRLMS1503 IRLMS1902 IRLMS5703 IRLMS6702 IRLMS6802
Text: IRLMS6702 D = IRLMS5703 E = IRLMS6802 F = IRLMS4502 G = IRLMS2002 H = IRLMS6803 Note: A line above the


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PDF IRLML2402PbF OT-23 EIA-481 EIA-541. irlms4502 IRLMS1503 IRLMS1902 IRLMS5703 IRLMS6702 IRLMS6802
marking code 67a sot23 6

Abstract: No abstract text available
Text: 1503 IRLMS6702 IRLMS5703 IRLMS 6802 IRLMS4502 IRLMS2002 IRLMS6803 Note: A line above the work


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PDF IRLMS1503PbF EIA-481 EIA-541. marking code 67a sot23 6
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