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IRLML6401PBF INSTOCK
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Infineon Technologies AG
IRLML6401PBF MOSFET, P, -12V, -4.3A, MICRO 3
Distributors Part Package Stock Min Order Qty 1 10 100 1,000 10,000 Buy
element14 Asia-Pacific(2) IRLML6401PBF 0 1 $0.393 $0.393 $0.18 $0.11 $0.11 Buy Now
IRLML6401PBF 0 1 $0.393 $0.393 $0.18 $0.11 $0.11 Buy Now
Farnell element14 IRLML6401PBF 0 5 - £0.321 £0.138 £0.138 £0.138 Buy Now

IRLML6401P datasheet (1)

Part Manufacturer Description Type PDF
IRLML6401PBF International Rectifier -12V Single P-Channel Lead Free HEXFET Power MOSFET in a Micro3 package Original PDF

IRLML6401P Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2010 - schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Text: No file text available


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PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
irfb4115

Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Text: No file text available


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PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
IRLML2402

Abstract: IRLML2803 IRLML5103 IRLML6302 IRLML6402 43A MARKING CODE marking 43A sot23 MARKING BS SOT-23 IRLML6401PBF
Text: IRLML6401PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS , = 3.5mH RG = 25, IAS = -4.3A. 2 IRLML6401PbF Micro3 (SOT-23) Package Outline Dimensions , WORK WEEK W 27 28 29 30 A B C D 50 51 52 X Y Z 7 IRLML6401PbF


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PDF IRLML6401PbF EIA-481 EIA-541. IRLML2402 IRLML2803 IRLML5103 IRLML6302 IRLML6402 43A MARKING CODE marking 43A sot23 MARKING BS SOT-23 IRLML6401PBF
2010 - ADM4160

Abstract: 9S08QD4 CP-202A-ND 399-1170-1-ND ADUM5000XRWZ AE9923-ND isolated dc-to-dc converter ADuM4160 ADM5000 160-1167-1-ND
Text: AE9923-ND P3 2.1MM Jack CP-202A-ND P4 A26528-40-ND Q1 IRLML6401PBFCT IRLML6401PBFCT-ND Q2 IRLML6401PBFCT IRLML6401PBFCT-ND R1 33 311-33.0CRCT-ND R2 33


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PDF AN4092 ADM4160 9S08QD4 CP-202A-ND 399-1170-1-ND ADUM5000XRWZ AE9923-ND isolated dc-to-dc converter ADuM4160 ADM5000 160-1167-1-ND
2010 - Diode smd s6 46

Abstract: IRLML6401TRPBF smd diode s6 43a smd b3u ATW SOT23 AT90USB1287 SD307 at90usb1287 evaluation board SD303EVK IRLML6401PbF
Text: 8 7 6 5 IRLML6401PbF C28 4.7uF DVCC LP3981 Vout NC2 Vin Ven NC1 Bypass Sense


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PDF SD303EVK SD307EVK LMH0303 LMH0307 SD303/SD307 LMH0307 Diode smd s6 46 IRLML6401TRPBF smd diode s6 43a smd b3u ATW SOT23 AT90USB1287 SD307 at90usb1287 evaluation board IRLML6401PbF
2006 - 10uF CAPACITOR 1210 PACKAGE

Abstract: 220uF 10v 10TPB220M power mosfet IR resistor r7 1K Q2 220uF 10v power supply 12v/5A datasheet IRLML6401PbF DO3316P CAP 220UF
Text: Q3 1 IRLML6401PBF Single NFET Power MOSFET IR 21 U1 1 ISL6443IRZ 300kHz


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PDF ISL6443EVAL2Z AN1220 ISL6443 ISL6443IRZ 300kHz, FDS6912A 10uF CAPACITOR 1210 PACKAGE 220uF 10v 10TPB220M power mosfet IR resistor r7 1K Q2 220uF 10v power supply 12v/5A datasheet IRLML6401PbF DO3316P CAP 220UF
2004 - IRLML2402

Abstract: IRLML2803 IRLML5103 IRLML6302 IRLML6402 IRLML6401PBF
Text: PD - 94891A IRLML6401PbF l l l l l l l l Ultra Low On-Resistance P-Channel MOSFET , 75 100 °C/W 1 11/8/04 IRLML6401PbF Electrical Characteristics @ TJ = 25°C (unless , www.irf.com IRLML6401PbF 100 VGS -7.0V -5.0V -4.5V -3.0V -2.5V - 1.8V -1.5V BOTTOM -1.0V 100 , IRLML6401PbF VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd Coss = C + Cgd ds Ciss , IRLML6401PbF EAS , Single Pulse Avalanche Energy (mJ) 5.0 -ID , Drain Current (A) 4.0 3.0 2.0


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PDF 4891A IRLML6401PbF OT-23 EIA-481 EIA-541. IRLML2402 IRLML2803 IRLML5103 IRLML6302 IRLML6402 IRLML6401PBF
2010 - Not Available

Abstract: No abstract text available
Text: % HEADER 7X2 GND 1uF U2 8 7 6 5 IRLML6401PbF C28 4.7uF DVCC LP3981 Vout NC2


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PDF SD303EVK SD307EVK LMH0303 LMH0307 SD303/SD307 LMH0307
2008 - power mosfet IR

Abstract: 10uF CAPACITOR 1210 PACKAGE 220uF 10v Q2 220uF 10v IRLML6401 ISL6443AEVAL2Z ISL6443A resistor 1k FDS6912A CAP P5 10uF datasheet
Text: 1 Resistor, Film 806, 0603, 1%, 1/16W Generic 20 Q3 1 IRLML6401PBF Single


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PDF ISL6443AEVAL2Z AN1391 ISL6443A FDS6912A ISL6443AEVAL2Z power mosfet IR 10uF CAPACITOR 1210 PACKAGE 220uF 10v Q2 220uF 10v IRLML6401 resistor 1k FDS6912A CAP P5 10uF datasheet
IRLML6401PBF

Abstract: No abstract text available
Text: PD - 94891B IRLML6401PbF l l l l l l l l l Ultra Low On-Resistance P-Channel MOSFET , Junction-to-Ambientƒ Typ. Max. Units 75 100 °C/W 1 05/13/10 IRLML6401PbF Electrical , steady state. RG = 25Ω, IAS = -4.3A. 2 www.irf.com IRLML6401PbF 100 100 VGS -7.0V , ( °C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRLML6401PbF 10 VGS = 0V, f = 1 , (V) Fig 8. Maximum Safe Operating Area www.irf.com IRLML6401PbF EAS , Single Pulse


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PDF 94891B IRLML6401PbF OT-23 EIA-481 EIA-541. IRLML6401PBF
2003 - IRLML6401PBF

Abstract: No abstract text available
Text: PD - 94891 IRLML6401PbF l l l l l l l l Ultra Low On-Resistance P-Channel MOSFET SOT , www.irf.com 1 12/15/03 IRLML6401PbF Electrical Characteristics @ TJ = 25°C (unless otherwise , = 3.5mH RG = 25, IAS = -4.3A. 2 www.irf.com IRLML6401PbF 100 VGS -7.0V -5.0V -4.5V , . Normalized On-Resistance Vs. Temperature www.irf.com 3 IRLML6401PbF 1200 VGS = 0V, f = 1 MHZ Ciss , 4 www.irf.com IRLML6401PbF 5.0 EAS , Single Pulse Avalanche Energy (mJ) 80 4.0


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PDF IRLML6401PbF OT-23 EIA-481 EIA-541. IRLML6401PBF
2000 - 220v AC voltage stabilizer schematic diagram

Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
Text: No file text available


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PDF AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
DIODE C18 ph

Abstract: EMERSON rectifier C18 ph diode RESISTOR ROHM R20 smd diode s6 43a digi-key resistor 33 ohm 10w schottkey DIODE c19 0.1uF Capacitor Ceramic IRLML6401TRPBF
Text: - ND A26576-ND 490-1134-1-ND IRLML6401PBFCT-ND RHM75.0LCT-ND 541-750LCT-ND RHM10KGCT-ND


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PDF SD307 WM17116TR-ND 111-0702-001-ND 111-0703-001-ND A26580 A26576-ND 490-1134-1-ND IRLML6401PBFCT-ND RHM75 541-750LCT-ND DIODE C18 ph EMERSON rectifier C18 ph diode RESISTOR ROHM R20 smd diode s6 43a digi-key resistor 33 ohm 10w schottkey DIODE c19 0.1uF Capacitor Ceramic IRLML6401TRPBF
Not Available

Abstract: No abstract text available
Text: Product specification IRLML6401PbF l l l l l l l l l HEXFET® Power MOSFET Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile (<1.1mm) Available in Tape and Reel Fast Switching 1.8V Gate Rated Lead-Free Halogen-Free *  VDSS = -12V  ' RDS(on) = 0.05Ω 6  Description These P-Channel MOSFETs from International Rectifier utilize , 4008-318-123 1 of 2 Product specification IRLML6401PbF Electrical Characteristics @ TJ = 25Â


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PDF IRLML6401PbF OT-23 -100A/Â
2014 - IRLML6401TRPBF

Abstract: IRLML6401PBF
Text: IRLML6401PbF l l l l l l l l l HEXFET® Power MOSFET Ultra Low On-Resistance , . Max. Units 75 100 °C/W Submit Datasheet Feedback April 28, 2014 IRLML6401PbF , Datasheet Feedback April 28, 2014 IRLML6401PbF 100 VGS -7.0V -5.0V -4.5V -3.0V -2.5V - 1.8V , IRLML6401PbF VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd Coss = C + Cgd ds , IRLML6401PbF EAS , Single Pulse Avalanche Energy (mJ) 5.0 -ID , Drain Current (A) 4.0 3.0 2.0


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PDF IRLML6401PbF OT-23 IRLML6401TRPBF IRLML6401PBF
2010 - IRLML6401PbF

Abstract: marking 43A sot23 EIA-541
Text: PD - 94891B IRLML6401PbF l l l l l l l l l Ultra Low On-Resistance P-Channel MOSFET , 75 100 °C/W 1 05/13/10 IRLML6401PbF Electrical Characteristics @ TJ = 25°C (unless , www.irf.com IRLML6401PbF 100 VGS -7.0V -5.0V -4.5V -3.0V -2.5V - 1.8V -1.5V BOTTOM -1.0V 100 , IRLML6401PbF VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd Coss = C + Cgd ds Ciss , IRLML6401PbF EAS , Single Pulse Avalanche Energy (mJ) 5.0 -ID , Drain Current (A) 4.0 3.0 2.0


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PDF 94891B IRLML6401PbF OT-23 EIA-481 EIA-541. IRLML6401PbF marking 43A sot23 EIA-541
2013 - IRLML6401TRPBF

Abstract: IRLML6401PBF
Text: IRLML6401PbF-1 HEXFET® Power MOSFET VDS -12 Qg (typical) ID (@TA = 25°C) 0.05 Π, 75 100 °C/W Submit Datasheet Feedback November 25, 2013 IRLML6401PbF-1 Electrical , Datasheet Feedback November 25, 2013 IRLML6401PbF-1 100 VGS -7.0V -5.0V -4.5V -3.0V -2.5V - , , 2013 IRLML6401PbF-1 VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd Coss = , IRLML6401PbF-1 EAS , Single Pulse Avalanche Energy (mJ) 5.0 -ID , Drain Current (A) 4.0 3.0


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PDF IRLML6401PbF-1 OT-23 IRLML6401TRPbF-1 OT-23) IRLML6402TRPbF-1 D-020D IRLML6401TRPBF IRLML6401PBF
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