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2004 - IRL 724 N

Abstract:
Text: Line MRF18030BR3 RF Power Field Effect Transistors MRF18030BLR3 N - Channel Enhancement - Mode , Suffix = 250 Units per 32 mm,13 inch Reel. GSM/GSM EDGE 1.93 - 1.99 GHz, 30 W, 26 V LATERAL N - CHANNEL , obtained on a Production Test Fixture. P1dB Gps IRL 27 13 46.5 - 30 14 50 - 12 - - - -9 Watts dB % dB , ) 14 13 12 IRL @ 15 W 11 10 1850 VDD = 26 Vdc IDQ = 250 mA T = 25_C 1900 1950 f, FREQUENCY (MHz) 2000 -25 -30 2050 Gps @ 15 W Gps @ 30 W 0 Pout , OUTPUT POWER (WATTS) IRL , INPUT RETURN LOSS (dB) -5 -10


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PDF MRF18030B/D MRF18030BR3 MRF18030BLR3 MRF18030BSR3 MRF18030BLSR3 MRF18030BLSR3 MRF18030B/D IRL 724 N IRL 724
2006 - IRL 724 N

Abstract:
Text: Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and EDGE , GSM/GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs CASE 465E - 04, STYLE 1 NI - 400 MRF18030ALR3 , 50 - % Input Return Loss @ 30 W (VDD = 26 Vdc, IDQ = 250 mA, f = 1805 - 1880 MHz) IRL , Gps @ 15 W 14 -10 Gps @ 30 W 13 -15 IRL @ 30 W 12 -20 VDD = 26 Vdc IDQ = 250 mA T = 25_C 11 10 IRL @ 15 W 1750 -25 1800 1850 30 1W 25 20 VDD = 26


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PDF MRF18030A MRF18030ALR3 MRF18030ALSR3 IRL 724 N MRF18030A 1003 c2 400S MRF18030ALSR3
2006 - IRL 724 N

Abstract:
Text: EDGE LATERAL N - CHANNEL RF POWER MOSFETs CASE 465E - 04, STYLE 1 NI - 400 MRF18030BLR3 CASE , INFORMATION ARCHIVE INFORMATION N - Channel Enhancement - Mode Lateral MOSFETs °C/W Table 2 , Return Loss @ 30 W (VDD = 26 Vdc, IDQ = 250 mA, f = 1930 - 1990 MHz) IRL - - 12 -9 dB , TYPICAL CHARACTERISTICS 0 -15 IRL @ 30 W 12 -20 IRL @ 15 W VDD = 26 Vdc IDQ = 250 mA T = , (MHz) Figure 3. Wideband Gain and IRL at 30 W and 15 W Output Power 1960 1980 2000 2020


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PDF MRF18030B MRF18030BLR3 MRF18030BLSR3 IRL 724 N IRL 724 J906 400S MRF18030B MRF18030BLSR3
2004 - HC-49/IRL 724 N

Abstract:
Text: obtained on a Production Test Fixture. P1dB Gps IRL 27 13 46.5 - 30 14 50 -12 - - - -9 W dB % dB Crss , ) IRL , INPUT RETURN LOSS (dB) -5 -10 -15 -20 -25 -30 2050 40 35 30 25 20 15 10 5 0 1880 1900 1920 1940 1960 1980 2000 2020 0.5 W VDD = 26 Vdc IDQ = 250 mA T = 25_C Pin = 2 W 1W IRL @ 30 W IRL @ 15 W 0.25 W 1950 f, FREQUENCY (MHz) 2000 f, FREQUENCY (MHz) Figure 3. Wideband Gain and IRL at , G SEE NOTE 4 1 2X K 2 2X D bbb N (LID) ccc M M Q M bbb B 3 T B M A M B


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PDF MRF18030B MRF18030BLR3 MRF18030BLSR3 HC-49/IRL 724 N
2006 - MRF18030ALSR3

Abstract:
Text: specifications obtained on a Production Test Fixture. P1dB Gps IRL 27 13 46.5 - 30 14 50 -12 - - - -9 W dB , 250 mA T = 25_C 1800 1850 f, FREQUENCY (MHz) IRL @ 15 W -25 -30 1950 Gps @ 15 W Gps @ 30 W IRL @ 30 W 0 P out, OUTPUT POWER (WATTS) IRL , INPUT RETURN LOSS (dB) -5 -10 -15 -20 40 35 30 25 20 15 10 , 25_C 1900 ARCHIVE INFORMATION Figure 3. Wideband Gain and IRL at 30 W and 15 W Output Power , PACKAGE DIMENSIONS 2X G SEE NOTE 4 1 2X K 2 2X D bbb N (LID) ccc M M Q M bbb B 3 T B M A


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PDF MRF18030A MRF18030ALR3 MRF18030ALSR3 MRF18030ALSR3 HC-49/IRL 724 N
2004 - 400S

Abstract:
Text: MRF18030BLR3 N - Channel Enhancement - Mode Lateral MOSFETs MRF18030BLSR3 Designed for GSM and EDGE base , LATERAL N - CHANNEL RF POWER MOSFETs CASE 465E - 04, STYLE 1 NI - 400 MRF18030BLR3 CASE 465F - 04 , ) IRL - - 12 -9 dB Output Mismatch Stress @ 30 W (VDD = 26 Vdc, IDQ = 250 mA, f1 = 1930 , Gps @ 30 W 14 13 -10 -15 IRL @ 30 W 12 -20 IRL @ 15 W VDD = 26 Vdc IDQ = 250 mA T , (MHz) Figure 3. Wideband Gain and IRL at 30 W and 15 W Output Power 14 200 mA 13 12 100 mA


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PDF MRF18030B/D MRF18030BLR3 MRF18030BLSR3 MRF18030BLR3 400S IRL 724 N MRF18030B MRF18030BLSR3
2006 - IRL 724 N

Abstract:
Text: Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and EDGE , 1930- 1990 MHz, 30 W, 26 V GSM/GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs CASE 465E - 04, STYLE , = 1930 - 1990 MHz) IRL - - 12 -9 dB Characteristic Off Characteristics Drain , @ 30 W 14 13 -10 -15 IRL @ 30 W 12 11 10 1850 -20 IRL @ 15 W VDD = 26 Vdc , 1920 f, FREQUENCY (MHz) Figure 3. Wideband Gain and IRL at 30 W and 15 W Output Power 1980


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PDF MRF18030B MRF18030BLR3 MRF18030BLSR3 IRL 724 N ZO 405 400S marking j9 marking Z4 MRF18030B MRF18030BLSR3
2006 - HC-49/IRL 724 N

Abstract:
Text: , 30 W, 26 V GSM/GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs ARCHIVE INFORMATION ARCHIVE INFORMATION N - Channel Enhancement - Mode Lateral MOSFETs CASE 465E - 04, STYLE 1 NI - 400 , ) IRL — - 12 -9 dB Off Characteristics Dynamic Characteristics Reverse Transfer , Semiconductor 3 TYPICAL CHARACTERISTICS 0 −15 IRL @ 30 W 12 −20 IRL @ 15 W VDD = 26 Vdc , 1920 f, FREQUENCY (MHz) Figure 3. Wideband Gain and IRL at 30 W and 15 W Output Power 1960


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PDF MRF18030B MRF18030BLR3 MRF18030BLSR3 HC-49/IRL 724 N IRL 724 N
2004 - Not Available

Abstract:
Text: obtained on a Production Test Fixture. P1dB Gps IRL 27 13 46.5 - 30 14 50 -12 - - - -9 W dB % dB Crss , ) IRL , INPUT RETURN LOSS (dB) -5 -10 -15 -20 -25 -30 2050 40 35 30 25 20 15 10 5 0 1880 1900 1920 1940 1960 1980 2000 2020 0.5 W VDD = 26 Vdc IDQ = 250 mA T = 25_C Pin = 2 W 1W IRL @ 30 W IRL @ 15 W 0.25 W 1950 f, FREQUENCY (MHz) 2000 f, FREQUENCY (MHz) Figure 3. Wideband Gain and IRL at , G SEE NOTE 4 1 2X K 2 2X D bbb N (LID) ccc M M Q M bbb B 3 T B M A M B


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PDF MRF18030B MRF18030BLR3 MRF18030BLSR3
2003 - 2019 gain

Abstract:
Text: , f = 1805 ­ 1880 MHz) IRL - ­12 ­9 dB Output Mismatch Stress @ 30 W (VDD = 26 Vdc , 14 -10 Gps @ 30 W 13 -15 IRL @ 30 W 12 -20 VDD = 26 Vdc IDQ = 250 mA T = 25_C 11 10 IRL @ 15 W 1750 -25 1800 1850 30 1W 25 20 VDD = 26 Vdc IDQ = 250 , ) Figure 3. Wideband Gain and IRL at 30 W and 15 W Output Power Figure 4. Output Power versus Frequency , out, OUTPUT POWER (WATTS) 0 IRL , INPUT RETURN LOSS (dB) 16 10 10 Pout, OUTPUT POWER


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PDF MRF18030A/D MRF18030AR3 MRF18030ASR3 2019 gain MRF18030A 1003 c2 400S J1022 MRF18030ASR3
2001 - Motorola transistors M 724

Abstract:
Text: . (2) Device specifications obtained on a Production Test Fixture. P1dB Gps IRL 27 13 45 9 30 14 50 , Type " N " Figure 1. 1930 ­ 1990 MHz Test Fixture Schematic VBIAS R2 R3 C7 A1 C1 C2 CUTOUT AREA C5 , 25_C 1900 Gps @ 15 W Gps @ 30 W 0 Pout , OUTPUT POWER (WATTS) IRL , INPUT RETURN LOSS (dB) -5 -10 , 26 Vdc IDQ = 250 mA T = 25_C Pin = 2 W 1W IRL @ 30 W IRL @ 15 W 0.25 W 1950 f, FREQUENCY (MHz) 2000 f, FREQUENCY (MHz) Figure 3. Wideband Gain and IRL at 30 W and 15 W Output Power


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PDF MRF18030B/D MRF18030B MRF18030BR3 MRF18030BS MRF18030BSR3 Motorola transistors M 724
2004 - MRF18030ALSR3

Abstract:
Text: Line MRF18030AR3 RF Power Field Effect Transistors MRF18030ALR3 N - Channel Enhancement - Mode , Suffix = 250 Units per 32 mm, 13 inch Reel. 1.8 - 1.88 GHz, 30 W, 26 V GSM/GSM EDGE LATERAL N - CHANNEL , obtained on a Production Test Fixture. P1dB Gps IRL 27 13 46.5 - 30 14 50 - 12 - - - -9 Watts dB % dB , CHARACTERISTICS 16 15 G ps , POWER GAIN (dB) 14 13 IRL @ 30 W 12 IRL @ 15 W 11 10 1750 VDD = 26 Vdc IDQ = 250 mA , POWER (WATTS) IRL , INPUT RETURN LOSS (dB) -5 -10 -15 40 35 30 25 20 0.5 W 15 10 5 0 1780 0.25 W VDD = 26


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PDF MRF18030A/D MRF18030AR3 MRF18030ALR3 MRF18030ASR3 MRF18030ALSR3 MRF18030ALSR3 MRF18030A/D
2004 - IRL 724 N

Abstract:
Text: MRF18030ALR3 N - Channel Enhancement - Mode Lateral MOSFETs MRF18030ALSR3 Designed for GSM and EDGE base , Suffix = 250 Units per 32 mm, 13 inch Reel. 1.8 - 1.88 GHz, 30 W, 26 V GSM/GSM EDGE LATERAL N - , ) IRL - - 12 -9 dB Output Mismatch Stress @ 30 W (VDD = 26 Vdc, IDQ = 250 mA, f1 = 1805 , -15 IRL @ 30 W 12 -20 IRL @ 15 W VDD = 26 Vdc IDQ = 250 mA T = 25_C 11 10 1750 -25 , f, FREQUENCY (MHz) Figure 3. Wideband Gain and IRL at 30 W and 15 W Output Power Figure 4


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PDF MRF18030A/D MRF18030ALR3 MRF18030ALSR3 MRF18030ALR3 IRL 724 N MRF18030A 400S MRF18030ALSR3
2004 - MRF18030A

Abstract:
Text: input and output. 2. Device specifications obtained on a Production Test Fixture. P1dB Gps IRL 27 13 , _C 1750 1800 1850 f, FREQUENCY (MHz) IRL @ 15 W -25 -30 1950 Gps @ 15 W Gps @ 30 W IRL @ 30 W 0 P out, OUTPUT POWER (WATTS) IRL , INPUT RETURN LOSS (dB) -5 -10 -15 -20 40 35 30 25 20 15 10 5 0 1780 1800 1820 , , FREQUENCY (MHz) Figure 3. Wideband Gain and IRL at 30 W and 15 W Output Power Figure 4. Output Power , 2X K 2 2X D bbb N (LID) ccc M M Q M bbb B 3 T B M A M B NOTES: 1


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PDF MRF18030A MRF18030ALR3 MRF18030ALSR3
2002 - 400S

Abstract:
Text: , f = 1805 ­ 1880 MHz) IRL - ­12 ­9 dB Output Mismatch Stress @ 30 W (VDD = 26 Vdc , -15 IRL @ 30 W 12 -20 1750 -25 1800 1850 30 1W 25 20 VDD = 26 Vdc , ) Figure 3. Wideband Gain and IRL at 30 W and 15 W Output Power Figure 4. Output Power versus Frequency , 100 50 Gps 10 0.1 1 , DRAIN EFFICIENCY (%) 10 IRL @ 15 W VDD = 26 Vdc IDQ = 250 mA T = 25_C 11 P out, OUTPUT POWER (WATTS) -5 40 IRL , INPUT RETURN LOSS (dB


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PDF MRF18030A/D MRF18030AR3 MRF18030ASR3 400S MRF18030A MRF18030ASR3
2002 - Not Available

Abstract:
Text: input and output. (2) Device specifications obtained on a Production Test Fixture. P1dB Gps IRL 27 13 , 25_C 1900 Gps @ 15 W Gps @ 30 W 0 Pout , OUTPUT POWER (WATTS) IRL , INPUT RETURN LOSS (dB) -5 -10 , 26 Vdc IDQ = 250 mA T = 25_C Pin = 2 W 1W IRL @ 30 W IRL @ 15 W 0.25 W 1950 f, FREQUENCY (MHz) 2000 f, FREQUENCY (MHz) Figure 3. Wideband Gain and IRL at 30 W and 15 W Output Power , 2X K 2 2X D bbb N (LID) ccc M M Q M bbb T B M A M 3 B NOTES: 1. CONTROLLING


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PDF MRF18030B/D MRF18030B MRF18030BR3 MRF18030BS MRF18030BSR3 MRF18030B/D
2004 - IRL 724

Abstract:
Text: input and output. 2. Device specifications obtained on a Production Test Fixture. P1dB Gps IRL 27 13 , _C 1750 1800 1850 f, FREQUENCY (MHz) IRL @ 15 W -25 -30 1950 Gps @ 15 W Gps @ 30 W IRL @ 30 W 0 P out, OUTPUT POWER (WATTS) IRL , INPUT RETURN LOSS (dB) -5 -10 -15 -20 40 35 30 25 20 15 10 5 0 1780 1800 1820 , , FREQUENCY (MHz) Figure 3. Wideband Gain and IRL at 30 W and 15 W Output Power Figure 4. Output Power , 2X K 2 2X D bbb N (LID) ccc M M Q M bbb B 3 T B M A M B NOTES: 1


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PDF MRF18030A MRF18030ALR3 MRF18030ALSR3 IRL 724 IRL 724 N
2002 - Not Available

Abstract:
Text: input and output. (2) Device specifications obtained on a Production Test Fixture. P1dB Gps IRL 27 13 , _C 1750 1800 1850 f, FREQUENCY (MHz) IRL @ 15 W Gps @ 15 W Gps @ 30 W IRL @ 30 W 0 P out, OUTPUT POWER (WATTS) IRL , INPUT RETURN LOSS (dB) -5 -10 -15 -20 -25 -30 1950 40 35 30 25 20 15 10 5 0 1780 1800 , , FREQUENCY (MHz) Figure 3. Wideband Gain and IRL at 30 W and 15 W Output Power Figure 4. Output Power , 2X K 2 2X D bbb N (LID) ccc M M Q M bbb T B M A M 3 B NOTES: 1. CONTROLLING


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PDF MRF18030A/D MRF18030A MRF18030AR3 MRF18030AS MRF18030ASR3 MRF18030A/D
2001 - zo 405 mf

Abstract:
Text: . (2) Device specifications obtained on a Production Test Fixture. P1dB Gps IRL 27 12.5 45 9 30 14 50 , _C 1750 1800 1850 f, FREQUENCY (MHz) IRL @ 15 W Gps @ 15 W Gps @ 30 W IRL @ 30 W 0 P out, OUTPUT POWER (WATTS) IRL , INPUT RETURN LOSS (dB) -5 -10 -15 -20 -25 -30 1950 40 35 30 25 20 15 10 5 0 1780 1800 , , FREQUENCY (MHz) Figure 3. Wideband Gain and IRL at 30 W and 15 W Output Power Figure 4. Output Power , PACKAGE DIMENSIONS 2X G B 1 2X K 2 2X D bbb N (LID) ccc M M Q M bbb T B M A M 3 B


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PDF MRF18030A/D MRF18030A MRF18030AR3 MRF18030AS MRF18030ASR3 zo 405 mf
2001 - IRL 724 N

Abstract:
Text: . (2) Device specifications obtained on a Production Test Fixture. P1dB Gps IRL 27 13 45 9 30 14 50 , _C 1750 1800 1850 f, FREQUENCY (MHz) IRL @ 15 W Gps @ 15 W Gps @ 30 W IRL @ 30 W 0 P out, OUTPUT POWER (WATTS) IRL , INPUT RETURN LOSS (dB) -5 -10 -15 -20 -25 -30 1950 40 35 30 25 20 15 10 5 0 1780 1800 , , FREQUENCY (MHz) Figure 3. Wideband Gain and IRL at 30 W and 15 W Output Power Figure 4. Output Power , PACKAGE DIMENSIONS 2X G B 1 2X K 2 2X D bbb N (LID) ccc M M Q M bbb T B M A M 3 B


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PDF MRF18030A/D MRF18030A MRF18030AR3 MRF18030AS MRF18030ASR3 IRL 724 N
2003 - 400S

Abstract:
Text: , f = 1930 ­ 1990 MHz) IRL - ­12 ­9 dB Output Mismatch Stress @ 30 W (VDD = 26 Vdc , MRF18030BR3 MRF18030BSR3 3 TYPICAL CHARACTERISTICS 0 Gps @ 30 W 14 13 -10 -15 IRL @ 30 W 12 11 10 1850 -20 IRL @ 15 W VDD = 26 Vdc IDQ = 250 mA T = 25_C -25 1900 1950 , 2050 2000 Pin = 2 W 35 0 1880 1900 1920 Figure 3. Wideband Gain and IRL at 30 W , 250 mA f = 1960 MHz T = 25_C 10 , DRAIN EFFICIENCY (%) G ps , POWER GAIN (dB) -5 IRL


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PDF MRF18030B/D MRF18030BR3 MRF18030BSR3 400S MRF18030B MRF18030BSR3
2002 - 400S

Abstract:
Text: , f = 1930 ­ 1990 MHz) IRL - ­12 ­9 dB Output Mismatch Stress @ 30 W (VDD = 26 Vdc , MRF18030BR3 MRF18030BSR3 3 0 Gps @ 30 W 14 13 -10 -15 IRL @ 30 W 12 11 10 1850 -20 IRL @ 15 W VDD = 26 Vdc IDQ = 250 mA T = 25_C -25 1900 1950 30 1W 25 20 VDD , 35 0 1880 1900 1920 Figure 3. Wideband Gain and IRL at 30 W and 15 W Output Power , 1960 MHz T = 25_C 10 , DRAIN EFFICIENCY (%) G ps , POWER GAIN (dB) -5 IRL , INPUT RETURN


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PDF MRF18030B/D MRF18030BR3 MRF18030BSR3 400S MRF18030B MRF18030BSR3
2006 - MRF19030

Abstract:
Text: Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF19030LR3 MRF19030LSR3 , Suffix = 250 Units per 32 mm, 13 Inch Reel. 1930- 1990 MHz, 30 W, 26 V LATERAL N - CHANNEL RF POWER , = 30 W PEP, IDQ = 300 mA, f1 = 1960.0 MHz, f2 = 1960.1 MHz) IRL - - 13 - dB Two , ) IRL - - 13 -9 dB Characteristic Off Characteristics Drain- Source Breakdown Voltage , Component Layout MRF19030LR3 MRF19030LSR3 4 RF Device Data Freescale Semiconductor IRL 40


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PDF MRF19030 MRF19030LR3 MRF19030LSR3 MRF19030LR3 MRF19030 400S MRF19030LSR3
2006 - MRF21030

Abstract:
Text: Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF21030LR3 MRF21030LSR3 , Inch Reel. 2200 MHz, 30 W, 28 V LATERAL N - CHANNEL RF POWER MOSFETs CASE 465E - 04, STYLE 1 , MHz, f2 = 2140.1 MHz) IRL - - 13 - dB Two - Tone Common - Source Amplifier Power , , f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) IRL - - 13 -9 dB , 50 -10 IRL 30 -15 -20 VDD = 28 Vdc, Pout = 30 W (PEP), IDQ = 250 mA Two-Tone


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PDF MRF21030 MRF21030LR3 MRF21030LSR3 MRF21030LR3 MRF21030 150 watts power amplifier layout 400S MRF21030LSR3 T 2140 zo 405
2004 - MRF19030

Abstract:
Text: Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs Designed for class AB PCN , GHz, 30 W, 26 V LATERAL N - CHANNEL RF POWER MOSFETs CASE 465E - 04, STYLE 1 NI - 400 , MHz, f2 = 1960.1 MHz) IRL - - 13 - dB Two - Tone Common - Source Amplifier Power , = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz) IRL - - 13 -9 dB OFF , , INTERMODULATION DISTORTION (dBc) 30 -20 45 ADJACENT CHANNEL POWER RATION (dB) IRL 40 , DRAIN


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PDF MRF19030/D MRF19030LR3 MRF19030LSR3 MRF19030LR3 MRF19030 400S MRF19030LSR3
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