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Part Manufacturer Supplier Stock Best Price Price Each Buy Part
IRFN054 Infineon Technologies AG Avnet - $77.59 $65.09
IRFN054 International Rectifier Future Electronics - $87.81 $70.25
IRFN054SCV Infineon Technologies AG Avnet - $179.09 $130.59
IRFN054SCX Infineon Technologies AG Avnet - $106.09 $84.39
IRFN054SCX Infineon Technologies AG Chip1Stop 11 $131.72 $131.06

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IRFN054 datasheet (6)

Part Manufacturer Description Type PDF
IRFN054 International Rectifier HEXFET Power Mosfet Original PDF
IRFN054 International Rectifier HEXFET Power Mosfet Original PDF
IRFN054 International Rectifier 60V Single N-Channel Hi-Rel MOSFET in a SMD-1 package; A IRFN054 with Standard Packaging Original PDF
IRFN054 International Rectifier Government / Space Products - High Reliability Power MOSFETS Scan PDF
IRFN054 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
IRFN054SMD Semelab N-CHANNEL POWER MOSFET Original PDF

IRFN054 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
smd diode S4 64a

Abstract: No abstract text available
Text: Provisional Data Sheet No. PD-9.1543A IO R Rectifier HEXFET® POWER MOSFET IRFN054 N -C H A , circuits. Product Summary Part Number B Voss IRFN054 60V RoS(on) Id 0 .0 2 0 0 55A , IRFN054 55* 40 256 150 1.2 ±20 480 55 15 4.5 -55 to 150 Units A W W/K® V mj A mJ V/ns °C 300 (for 5 seconds) 2.6 (typical) 9 IRFN054 Device Electrical Characteristics @ , copper clad PC board IRFN054 Device 10-' 10° IO1 Vog, ORAIN-TO-SOURCE VOLTAGE (VOLTS


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PDF IRFN054 5S452 GD24flSfl smd diode S4 64a
2010 - IRFN054

Abstract: No abstract text available
Text: PD-91543C POWER MOSFET SURFACE MOUNT (SMD-1) IRFN054 60V, N-CHANNEL ® HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFN054 0.020 55A* HEXFET® MOSFET , www.irf.com 1 02/15/10 IRFN054 Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified , International Rectifier Website. For footnotes refer to the last page 2 www.irf.com IRFN054 Fig 1 , IRFN054 8000 C oss = C ds + C gd 5000 Ciss ID = 55A VGS, Gate-to-Source Voltage (V


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PDF PD-91543C IRFN054 IRFN054
1996 - DIODE SMD 55a

Abstract: ir mosfet smd package smd 2f IRFN054
Text: ® POWER MOSFET IRFN054 N-CHANNEL 60 Volt, 0.020 HEXFET Product Summary HEXFET technology is , enhancing thermal and electrical performance. Part Number IRFN054 BV DSS 60V RDS(on) 0.020 , Junction Storage Temperature Range Package Mounting Surface Temperature Weight To Order IRFN054 , IRFN054 Device Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Min. Typ. Max , IRFN054 Device Fig. 2 - Typical Output Characteristics TC = 150°C Fig. 1 - Typical Output


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PDF IRFN054 DIODE SMD 55a ir mosfet smd package smd 2f IRFN054
2002 - IRFN054

Abstract: No abstract text available
Text: PD - 91543B POWER MOSFET SURFACE MOUNT (SMD-1) IRFN054 60V, N-CHANNEL ® HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFN054 0.020 55A* HEXFET® MOSFET , IRFN054 Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min Typ , the last page 2 www.irf.com IRFN054 Fig 1. Typical Output Characteristics Fig 2 , Fig 4. Normalized On-Resistance Vs. Temperature 3 IRFN054 ID = 55A 13a & b Fig 5


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PDF 91543B IRFN054 IRFN054
Diode SMD ED 9C

Abstract: FN240 p-channel 250V 30A power mosfet P-CHANNEL 400V 15A i428
Text: Z> t stg IOR Part Number IRFN044 34 21 136 75 0.6 IRFN054 45 28 180 100 0.8 ±2 0 340 4.5 480 , Temperature Coefficient of Breakdown Voltage Part Number IRFN044 IRFN054 IRFN 140 IRFN150 IRFN240 IRFN250 N-Channel IRFN340 IRFN350 IRFN440 IRFN450 IRFNG40 IRFNG50 IRFN9140 P-Channel IRFN9240 IRFN044 IRFN054 , P-Channel IRFN9240 IRFN044 IRFN054 IRFN 140 IRFN150 IRFN240 IRFN250 N-Channel IRFN340 IRFN350 IRFN440 , . Typ. ALL ALL IRFN044 IRFN054 IRFN140 IRFN 150 IRFN240 IRFN250 N-Channel IRFN340 IRFN350 IRFN440


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PDF I-445 Diode SMD ED 9C FN240 p-channel 250V 30A power mosfet P-CHANNEL 400V 15A i428
1996 - IRFN054

Abstract: No abstract text available
Text: Provisional Data Sheet No. PD-9.1543A HEXFET® POWER MOSFET IRFN054 N-CHANNEL 60 Volt , IRFN054 BV DSS 60V RDS(on) 0.020 ID 55A* Features: s s s s s s s Avalanche Energy , Temperature Weight IRFN054 55* 40 256 150 1.2 ±20 480 55 15 4.5 -55 to 150 Units A W W/K V mJ A mJ V/ns oC 300 (for 5 seconds) 2.6 (typical) g IRFN054 Device Electrical , IRFN054 Device Fig. 1 - Typical Output Characteristics TC = 25°C Fig. 2 - Typical Output


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PDF IRFN054 IRFN054
Not Available

Abstract: No abstract text available
Text: PD-91543C POWER MOSFET SURFACE MOUNT (SMD-1) IRFN054 60V, N-CHANNEL ® HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFN054 0.020 Ω 55A* HEXFET , footnotes refer to the last page www.irf.com 1 02/15/10 IRFN054 Electrical Characteristics @ Tj , IRFN054 Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics ID = 55A , . Temperature 3 IRFN054 8000 C oss = C ds + C gd 5000 Ciss ID = 55A VGS, Gate-to-Source


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PDF PD-91543C IRFN054
smd diode sm 3c

Abstract: tr/smd diode sm 3c
Text: N -C H A N N E L Product Summary Part Number IRFN054 B V dss 60V RDS(on) Id 55A* o.o2on , 10V, Tc " 25°C lD@ VGS= 10V, Tc - 100-C 'DM PD@ T c -25°C vgs IRFN054 55* 40 256 150 1.2 ±20 480 , Temperature Range Package Mounting Surface Temperature Weight IRFN054 Device Electrical Characteristics , . Units - - - TBD 0.83 - K/W Test Conditions Soldered to a copper clad PC board IRFN054 , . Draln-to-Source Voltage Fig. 6 - Typical Gate Charge Vs. Gate-to-Source Voltage IRFN054 Device 10


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PDF
1998 - 4600 mosfet

Abstract: MOSFET 20V 45A
Text: SEME IRFN054 LAB MECHANICAL DATA Dimensions in mm (inches) N­CHANNEL POWER MOSFET 11.5 2.0 1.5 3.0 3.5 1 4.6 3.5 3 60V 45A 0.027 FEATURES · HERMETICALLY SEALED SURFACE MOUNT PACKAGE 9.0 15.8 VDSS ID(cont) RDS(on) 0.25 · SMALL FOOTPRINT ­ EFFICIENT USE OF PCB SPACE. 2 · SIMPLE DRIVE REQUIREMENTS 8.5 · LIGHTWEIGHT · HIGH PACKING , ) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 7/94 SEME IRFN054 LAB ELECTRICAL


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PDF IRFN054 220SM 300ms, 4600 mosfet MOSFET 20V 45A
Not Available

Abstract: No abstract text available
Text: Mil W llll : SEME IRFN054 LAB N-CHANNEL POWER MOSFET VDSS 0.25 3.5 3.0 11.5 2.0 3.5 MECHANICAL DATA Dimensions in mm (inches) I D(cont) ^D S (on) 60V 45A 0.027Q iC r r -1 - FEATURES · HERMETICALLY SEALED SURFACE MOUNT PACKAGE · SMALL FOOTPRINT - EFFICIENT USE OF PCB SPACE. 8.5 · SIMPLE DRIVE REQUIREMENTS · LIGHTWEIGHT · HIGH PACKING DENSITIES TO , (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 7/94 SEME IRFN054 LAB (Tamb = 25


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PDF IRFN054 O-220SM 480mJ 300ms,
n10 smd

Abstract: No abstract text available
Text: 11 9.1 5.8 11 9.1 5.8 14 11 14 22 11 14 22 IRFN044 IRFN054 IRFN140 IRFN150 IRFN240 IRFN250


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PDF IRFE024 IRFE110 IRFE120 IRFE130 IRFE210 IRFE220 IRFE230 IRFE310 IRFE320 IRFE330 n10 smd
2004 - Not Available

Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 778, REV. - SHD219501 HERMETIC POWER MOSFET N-CHANNEL FEATURES: 60 Volt, 0.020 Ohm, 55A MOSFET Isolated Hermetic Ceramic Package Fast Switching Low RDS (on) Equivalent to IRFN054 MAXIMUM RATINGS RATING GATE TO SOURCE VOLTAGE ON-STATE DRAIN CURRENT @ TC = 25C VGS = 10V @ TC = 100C PULSED DRAIN CURRENT @ TC = 25C OPERATING AND STORAGE TEMPERATURE THERMAL RESISTANCE, JUNCTION TO CASE TOTAL DEVICE DISSIPATION @ TC = 25C ALL RATINGS ARE AT TC


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PDF SHD219501 IRFN054 SHD219501
Not Available

Abstract: No abstract text available
Text: mi iFFi Nil SEME IRFN054 LAB MECHANICAL DATA Dimensions in mm (inches) N-CHANNEL POWER MOSFET V DSS 0.25 3.0 60V I D(cont) 11.5 45A 0.027a ^DS(on) FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE o o > L I 1'_ • SMALL FOOTPRINT - EFFICIENT USE OF PCB SPACE. 2 • SIMPLE DRIVE REQUIREMENTS 8.5 • LIGHTWEIGHT • HIGH PACKING DENSITIES , – y Prelim. 7/94 SEME IRFN054 LAB ELECTRICAL CHARACTERISTICS Parameter II o


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PDF IRFN054 O-220SM 00A/p 300ms,
IRLF110

Abstract: SMD H21 IRFJ130 IRLF120 IRFN450 IRFN350 IRFN250 IRFN150 IRFN054 IRFJ120
Text: -205AF TO-39 Surface Mount Device — N-Channel IRFÉ130 100 0.18 5.0 20 10 H22 LCC j^^Vj IRFN054 60


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PDF GG101Ã IRLF110 IRLF120 IRLF130 O-205AF IRFN054 IRFN150 IRFN250 IRFN350 IRFN450 SMD H21 IRFJ130 IRFJ120
IRFG014

Abstract: smd 9410 IRFH450 s 9413 9410 N-channel
Text: V IRFN054 IRFN150 IRFN250 60 100 200 400 500 r 0S(0N) (max) n 0.Q14 0.055 0.085 0.30 0.40 Iq


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PDF 00105b? IRFH150 1RFH250 IRFH350 IRFH450 T0-210AC IRFH9140 M0036AB IRFG014 IRFG110 smd 9410 s 9413 9410 N-channel
IRFJ140

Abstract: IRLF110
Text: N-Channel IRFE130 100 0.18 5.0 20 10 H22 LCC IRFN054 IRFN150 IRFN250 IRFN350 IRFN450 60 100 200


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PDF IRLF110 IRLF120 IRLF130 O-205AF JO-39 IRFE130 IRFN054 IRFN150 IRFN250 IRFN350 IRFJ140
Not Available

Abstract: No abstract text available
Text: IRFE9130 IRFE9210 IRFE9220 IRFE9230 IRFN044 IRFN054 IRFN140 IRFN150 IRFN240 IRFN250 IRFN340 IRFN350 IRFN440


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PDF IRHM7250 IRHM3250 IRHM4250 IRHM8250 JANSR2N7269 JANSF2N7269 JANSG2N7269 JANSH2N7269 IRHM7260 IRHM8260
2004 - SHD219501

Abstract: IRFN054
Text: SENSITRON SEMICONDUCTOR SHD219501 TECHNICAL DATA DATA SHEET 778, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: 60 Volt, 0.020 Ohm, 55A MOSFET Isolated Hermetic Ceramic Package Fast Switching Low RDS (on) Equivalent to IRFN054 MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPECIFIED. TYP. - MAX. 20 55 40 256 +150 0.36 348 UNITS Volts Amps IDM TOP/TSTG R hJC PD MIN. -55 - BVDSS 60 - - Volts - - 2.0 20 - 0.02


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PDF SHD219501 IRFN054 SHD219501 IRFN054
MNT-LB32N16-C4

Abstract: T0254 sml1001r1avr SM5104
Text: SEMELABpIc Type_No SELECTOR GUIDE Technology Polarity MOS PRODUCTS Package VDSS RDSSon ID Pd Ju n ei998 V e r.1.1 C¡ss_pf Qg_nC Td_on Tr Td_off Tf IRFF9210 IRFF9220 IRFF9230 IRFM044 IRFM054 IRFM140 IRFM150 IRFM240 IRFM250 IRFM340 IRFM350 IRFM360 IRFM440 IRFM460 IRFM9140 IRFM9240 IRFN044 IRFN054 IRFN140 IRFN150 IRFN240 IRFN250 IRFN340 IRFN350 IRFN440 IRFN450 IRFN9140 IRFN9240 IRFP150 IRFP151 IRFP152 IRFP153 IRFP450 IRFP451 IRFP452 IRFP453 IRFY044 IRFY044C IRFY120 IRFY120C IRFY130 IRFY130C


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PDF ei998 IRFF9210 IRFF9220 IRFF9230 IRFM044 IRFM054 IRFM140 IRFM150 IRFM240 IRFM250 MNT-LB32N16-C4 T0254 sml1001r1avr SM5104
TRANSISTOR BC 545 smd

Abstract: IRFN350 irfn44 IRFMG50 IRFN044 IRFN9040
Text: . Table A DEVICE ALPHA DESIGNATION DEVICE ALPHA DESIGNATION IRFN044 a IRFN350 h IRFN054 b IRFN440 i


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PDF IRFN044 IRFN350 IRFN054 IRFN440 IRFN140 IRFN450 IRFN150 IRFNG40 IRFN240 IRFNG50 TRANSISTOR BC 545 smd irfn44 IRFMG50 IRFN9040
1999 - 2N6764 JANTX

Abstract: 91447 IR2113L
Text: IRFM460 IRFM9140 IRFM9240 IRFMG40 IRFMG50 IRFN044 IRFN054 IRFN140 IRFN150 IRFN240 IRFN250 IRFN340 IRFN350


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PDF IRH7054 IRH7130 IRH7150 IRH7230 IRH7250 IRH7250SE IRHF7330SE IRHF7430SE IRH7450 IRH7450SE 2N6764 JANTX 91447 IR2113L
1998 - 2N6782 JANTX

Abstract: 2N6758 JANTX 2N6756 JANTX 2N6766 JANTX 2N6792 JANTX 2N7236 2n6806 jantx 60022 2N6770 JANTX 2N6796U
Text: -96 IRFMG50 90711 9 Oct-96 IRFN044 91545 6 Oct-96 IRFN054 91543 6 Oct


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PDF IRH7054 Oct-96 IRH7150 IRH7250 IRH7450SE Nov-96 IRH8054 2N6782 JANTX 2N6758 JANTX 2N6756 JANTX 2N6766 JANTX 2N6792 JANTX 2N7236 2n6806 jantx 60022 2N6770 JANTX 2N6796U
2N7334

Abstract: irfg9110 H24 SMD
Text: 1.6 14 22 IRFE9024 IRFE9110 IRFE9120 IRFE9130 IRFE9210 IRFE9220 IRFE9230 IRFN044 IRFN054


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PDF IRHE7110 IRHE8110 IRHE7130 IRHE8130 IRHE7230 IRHE8230 IRHE9130 IRHN7054 IRHN8054 IRHN7130 2N7334 irfg9110 H24 SMD
1997 - IRFM9034

Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261
Text: number IRFN044 IRFN054 IRFN140 IRFN150 IRFN240 IRFN250 IRFN340 IRFN350 IRFN440 IRFN450 IRFNG40 IRFNG50


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PDF IRHE7110 IRHE7130 IRHE7230 IRHE8110 IRHE8130 IRHE8230 IRHE9130 IRHE9230 IRHG7110 IRHG6110 IRFM9034 irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261
MO-D36AB

Abstract: IRF9510 SEC IRF510 SEC IRF540 smd 2n6845 jantx D 10.7 A e2958 2N6806 2N7237 JANTXV irfm9230
Text: IRFE210 IRFE220 IRFE230 IRFE310 IRFE320 IRFE330 IRFE420 IRFE430 IRFN044 IRFN054 IRFN140 IRFN150 IRFN240


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PDF MIL-S-19500 T0-254AA T0-204AA/AE MO-D36AB IRF9510 SEC IRF510 SEC IRF540 smd 2n6845 jantx D 10.7 A e2958 2N6806 2N7237 JANTXV irfm9230
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