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IRFF110 Infineon Technologies AG Avnet - - -
IRFF110 International Rectifier Future Electronics - $7.69 $6.20
IRFF110 Harris Semiconductor Bristol Electronics 2 $8.96 $8.96
IRFF110 International Rectifier Bristol Electronics 5 $9.52 $6.19
IRFF110 Infineon Technologies AG Chip1Stop 450 $10.76 $8.71
IRFF110 Infineon Technologies AG Farnell element14 - £6.35 £3.53

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IRFF110 datasheet (20)

Part Manufacturer Description Type PDF
IRFF110 International Rectifier REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE Original PDF
IRFF110 Intersil 3.5A, 100V, 0.600 ?, N-Channel Power MOSFET Original PDF
IRFF110 Semelab N-Channel MOSFET in a Hermetically Sealed TO39 Metal Package Original PDF
IRFF110 General Electric Power Transistor Data Book 1985 Scan PDF
IRFF110 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.5A. Scan PDF
IRFF110 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
IRFF110 International Rectifier TO-39 Package N-Channel HEXFET Scan PDF
IRFF110 International Rectifier N-Channel Power MOSFETs Scan PDF
IRFF110 International Rectifier TO-39 N-Channel HEXFET Power MOSFETs Scan PDF
IRFF110 Motorola European Master Selection Guide 1986 Scan PDF
IRFF110 Motorola N-channel enhancement-mode silicon gate TMOS small-signal field effect transistor. Scan PDF
IRFF110 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
IRFF110 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
IRFF110 Others Shortform Datasheet & Cross References Data Scan PDF
IRFF110 Others Semiconductor Master Cross Reference Guide Scan PDF
IRFF110 Others FET Data Book Scan PDF
IRFF110 Vishay Siliconix Shortform Siliconix Datasheet Scan PDF
IRFF110R Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
IRFF110R International Rectifier Rugged Series Power MOSFETs - N-Channel Scan PDF
IRFF110R Others Shortform Datasheet & Cross References Data Scan PDF

IRFF110 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
CH35Q

Abstract: G325 205AP G-324 International Rectifier 326 08TAIN irff110
Text: – Excellent Temperature Stability Product Summary Part Number vDs RDS(on) lD IRFF110 100V. 0.6fi 3,5 A IRFF111 , -39) Dimensions in Millimeters and (Inches) G-323 UE 0 | 4ÔS54S2 0001347 E | IRFF110 , IRFF111, IRFF112, IRFF113 Devices 'T-39-07 * " ' ' ? INTERNATIONAL »RECTIFIER Absolute Maximum Ratings Parameter IRFF110 IRFF111 , BVqss Drain - Source Breakdown Voltage IRFF110 IRFF112 100 - - V Vas = ov lD = 260,ia IRFF111 IRFF113 , Max. Rating x 0.8, VGS = OV, Tc = 125-C 'D(on) On-Stäte Drain Current (5) IRFF110 IRFF111 3.5 - - a


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PDF IRFF11Q IRFF111 T-39-07 G-328 CH35Q G325 205AP G-324 International Rectifier 326 08TAIN irff110
1998 - IRFF113

Abstract: TA17441
Text: S E M I C O N D U C T O R IRFF110 , IRFF111, IRFF112, IRFF113 3.0A and 3.5A, 80V and 100V, 0.6 , Soldering Surface Mount Components to PC Boards" Symbol Ordering Information PART NUMBER IRFF110 IRFF111 IRFF112 IRFF113 PACKAGE TO-205AF TO-205AF TO-205AF TO-205AF BRAND IRFF110 IRFF111 IRFF112 IRFF113 G D , IRFF110 , IRFF111, IRFF112, IRFF113 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRFF110 100 100 3.5 14 ±20 15 0.12 19 -55 to 150 300 260 IRFF111 80 80 3.5 14 ±20 15 0.12 19 -55 to 150


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PDF IRFF110, IRFF111, IRFF112, IRFF113 TA17441. IRFF113 TA17441
1rff110

Abstract: IRFF110 IRFF111 IRFF113 F112 FF110 IRFF112 cs 30-08 io4
Text: -;-Standard Power MOSFETs File Number 1562 IRFF110 , IRFF111, IRFF112, IRFF113 Power MOS , N-CHANNEL ENHANCEMENT MODE TERMINAL DIAGRAM The IRFF110 , IRFF111, IRFF112 and IRFF113 are n-channel , DESIGNATION _ GATE 92 CS- Ï7SS3 JEDEC TO-205AF Absolute Maximum Ratings Parameter IRFF110 IRFF111 , Standard Power MOSFETs- IRFF110 , IRFF111, IRFF112, IRFF113 Electrical Characteristics @Tc = 25 , Breakdown Voltage IRFF110 IRFF112 100 V VGS OV lD - 250/.A IRFF111 IRFF113 60 V vGS(th) Gate


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PDF IRFF110, IRFF111, IRFF112, IRFF113 0V-100V IRFF112 IRFF113 758VQSS 1rff110 IRFF110 IRFF111 F112 FF110 cs 30-08 io4
2002 - IRFF110

Abstract: TA17441 TB334
Text: IRFF110 Data Sheet January 2002 3.5A, 100V, 0.600 Ohm, N-Channel Power MOSFET Features , Boards" Formerly developmental type TA17441. Ordering Information PART NUMBER IRFF110 Symbol PACKAGE TO-205AF BRAND D IRFF110 NOTE: When ordering, use the entire part number. G S , IRFF110 Rev. B IRFF110 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRFF110 , Operation IRFF110 Rev. B IRFF110 Source to Drain Diode Specifications PARAMETER SYMBOL


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PDF IRFF110 IRFF110 TA17441 TB334
Not Available

Abstract: No abstract text available
Text: BRAND IRFF110 TO -205AF IRFF110 IRFF111 TO -205AF IRFF111 IRFF112 TO -205AF , 1562.2 IRFF110 , IRFF111,1RFF112, IRFF113 Absolute Maximum Ratings T c = 25°c, Unless Otherwise Specified IRFF110 IRFF111 IRFF112 IRFF113 UNITS Drain to Source Voltage (Note 1 , specified PARAMETER MIN TYP M AX UNITS IRFF110 , IRFF112 100 - - V IRFF111 , HA V DS =100V, VGS = 0V, - - 250 HA IRFF110 , IRFF111 3.5 . . A


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PDF IRFF111, IRFF112, IRFF113 IRFF110, RFF112, RFF113
2001 - TA17441

Abstract: No abstract text available
Text: IRFF110 Data Sheet March 1999 File Number 1562.3 3.5A, 100V, 0.600 Ohm, N-Channel Power MOSFET , , 5AF er () PART NUMBER IRFF110 PACKAGE TO-205AF BRAND IRFF110 Features · 3.5A, 100V · rDS(ON) = , -205AF DRAIN (CASE) SOURCE GATE ©2001 Fairchild Semiconductor Corporation IRFF110 Rev. A IRFF110 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRFF110 100 100 3.5 14 ±20 15 , Corporation IRFF110 Rev. A IRFF110 Source to Drain Diode Specifications PARAMETER Continuous Source


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PDF IRFF110 IRFF110 O-205AF TB334 TA17441
Not Available

Abstract: No abstract text available
Text: PD - 90423C IRFF110 JANTX2N6782 JANTXV2N6782 REF:MIL-PRF-19500/556 100V, N-CHANNEL , Part Number IRFF110 BVDSS 100V RDS(on) .60Ω ID 3.5A ® The HEXFET technology is , (typical) C g For footnotes refer to the last page www.irf.com 1 01/22/01 IRFF110 , Website. For footnotes refer to the last page 2 www.irf.com IRFF110 Fig 1. Typical Output , Fig 4. Normalized On-Resistance Vs. Temperature 3 IRFF110 13 a& b 13 a& b Fig 5. Typical


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PDF 90423C IRFF110 JANTX2N6782 JANTXV2N6782 MIL-PRF-19500/556 O-205AF)
1RFF111

Abstract: a08g IRFF110 IRFF111 IRFF112 IRFF113
Text: – Majority carrier device The IRFF110 , IRFF111, IRFF112 and IRFF113 are n-channel enhancement-mode , -—i—_—-"" _ Standard Power MOSFETs IRFf110 , IRFF111, IRFF112, IRFF113 Electrical Characteristics @Jq = , €¢ Source Breakdown Voltage IRFF110 IRFF112 100 - - V VGS = OV lD = 2S0«A 1RFF111 IRFF113 60 - - V , . Rating x 0.8, VGS - OV. Tc - 125°C 'D(on) On-State Drain Current © IRFF110 IRFF111 3.5 - - A VDS > 'D , Source Current (Body Diode) IRFF110 IRFF111 - - 3.5 A Modified MOSFET symbol showing the integral reverse


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PDF 7SD01 1RFF110, IRFF111, IRFF112, IRFF113 0V-100V IRFF110, IRFF112 IRFF113 1RFF111 a08g IRFF110 IRFF111
irf113

Abstract: IRFF110 IRFF RFF-11
Text: SILICONIX INC _ilîconix incorporated 1ÖE D ■AES473S 001470^ 3 ■IRFF110 /111/112/113 , SILICONIX INC lflE D ■Ö254735 GGIMTTO T ■IRFF110 /111/112/113 JFHfiSCfe ELECTRICA!. CHARACTERISTICS , TYP MIN MAX UNIT STATIC Drain-Source Breakdown Vortage IRFF110 ,112 IRFF111,113 V(8R)bss Vqs-OV , » 0 V 250 MA Vos - 0.8 x VpaiDssi Vos - OV.Tj - 125°C 1000 On-State Drain Current' IRFF110 ,111 IRFF112,113 ld(0n) Vos "6 V, Vqs = 10 V 3.5 3.0 A Drain-Source Ort-State Resistance' IRFF110 ,111


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PDF AES473S IRFF110/111/112/113 O-205AF IRFF11Q IRFF111 IRFF112 IRFF113 Junction111/112/113 DQ147TE T-39-07 irf113 IRFF110 IRFF RFF-11
2001 - IRFF110

Abstract: JANTX2N6782 JANTXV2N6782
Text: PD - 90423C IRFF110 JANTX2N6782 JANTXV2N6782 REF:MIL-PRF-19500/556 100V, N-CHANNEL , Number IRFF110 BVDSS 100V RDS(on) .60 ID 3.5A The HEXFET technology is the key to , to the last page www.irf.com 1 01/22/01 IRFF110 Electrical Characteristics @ Tj = 25 , footnotes refer to the last page 2 www.irf.com IRFF110 Fig 1. Typical Output Characteristics , 4. Normalized On-Resistance Vs. Temperature 3 IRFF110 13 a& b 13 a& b Fig 5. Typical


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PDF 90423C IRFF110 JANTX2N6782 JANTXV2N6782 MIL-PRF-19500/556 O-205AF) IRFF110 JANTX2N6782 JANTXV2N6782
1RFF113

Abstract: FF113R IRFF111R 1RFF110
Text: Linear Transfer Characteristics · High Input Impedance IRFF110 / 111/112/113 IRFF110R /111R/112R/113R N , s o lu te M axim um Ratings (Tq = +25°C), Unless Otherwise Specified IRFF110 IRFF110R Drain-Source , j = + 1 25°C O n-State Drain Current (Note 2) IRFF110 /111, IRFF110R /111 R IRFF112/113, IRFF112R /1 , siilcon-gate power field-etfect transistors. IRFF110R , IRFF111R, IRFF112R, and IRFF113R types are advanced , IRFF110 /11 2, IRFF110 R /1 12R IRFF111/113, IRFF11 1R /113R Gate Threshold Voltage Gate-Source Leakage


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PDF IRFF110/ IRFF110R/111R/112R/113R T0-205AF 1RFF110, IRFF111, IRFF112, IRFF113 IRFF110R, IRFF111R, IRFF112R, 1RFF113 FF113R IRFF111R 1RFF110
motorola mosfet for audio

Abstract: IRFF113 IRFF110
Text: • No Second Breakdown • Excellent Temperature Stability MAXIMUM RATINGS 98D 83283 D IRFF110 , Rating Symbol IRFF110 IRFF113 Unit Drain-Source Voltage VDSS 100 60 Vdc Drain-Gate Voltage (Rqs = 1 mil , ) IRFF110 IRFF113 V(BR)DSS 100 60 - Vdc Zero Gate Voltage Drain Current (VpS = Rated VDSS' VGS = 0) IDSS â


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PDF IRFF110 IRFF113 IRFF112 IRFF113 motorola mosfet for audio
1999 - TA17441

Abstract: IRFF110 TB334
Text: IRFF110 Data Sheet March 1999 3.5A, 100V, 0.600 Ohm, N-Channel Power MOSFET · 3.5A, 100V , type TA17441. Ordering Information IRFF110 Symbol PACKAGE TO-205AF 1562.3 Features , integrated circuits. PART NUMBER File Number BRAND D IRFF110 NOTE: When ordering, use the , . http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 IRFF110 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRFF110 100 100 3.5 14 ±20 15 0.12 19


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PDF IRFF110 TB334 TA17441. O-205AF TA17441 IRFF110 TB334
Not Available

Abstract: No abstract text available
Text: IRFF024 a IRFF420 k IRFF110 b IRFF430 I IRFF120 c IRFF9024 m IRFF130 , JANTXV2N6792 JANTXV2N6794 JANTXV2N6796 JANTXV2N6798 JANTXV2N6800 JANTXV2N6802 IRFF110 IRFF210 IRFF310 , Storage Temperature Range Lead Temperature dv/dt Part Number IRFF120 IRFF110 6.0 3.5 IRFF024 , Parameter BV q s s otherwise specified) Part Number Min. IRFF024 Typ. 60 IRFF110 100 , €” 0.068 — IRFF110 — 0.10 — IRFF120 — 0.10 — IRFF130 — 0.10


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PDF
Not Available

Abstract: No abstract text available
Text: p e r a t u r e S t a b ilit y IRFF110 IRFF113 N -C H A N N E L T M O S P O W E R FETs r D S , SS V d GR Vg S IRFF110 100 100 = 20 IRFF113 60 60 Unit V dc V dc V dc Ade >D 'D M Pd , ) IRFF110 IRFF113 V lB R lD S S 100 60 dss - V dc - - 250 /xA d c Z e ro G ate V o lta g e D , POWER MOSFET DATA IRFF110 , 113 E L E C T R IC A L C H A R A C T E R IS T IC S - c o n t in u e d , : 1.5 A d c ) IRFF110 IRFF113 'D (o n l IRFF110 IRFF113 = 1.5 A) 9 fs 3.5 3 1 ' v G S lth ) 2


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PDF IRFF110 IRFF11n IRFF113
IRFF110

Abstract: IRFF111
Text:  IRFF110 ,111 3.5 AMPERES 100, 60 VOLTS RDS(ON) = 0.6 n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device rugged-ness and reliability. This design has been optimized to give superior performance , IRFF110 IRFF111 UNITS Drain-Source Voltage Vdss 100 60 Volts Drain-Gate Voltage, Rqs = 1Mi! Vdgr 100 60 , SYMBOL MIN TYP MAX UNIT off characteristics Drain-Source Breakdown Voltage IRFF110 (VGS = OV, Id


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PDF IRFF110 IRFF11 IFIFF11 250MA, IRFF111
fd220

Abstract: IRFD221
Text: TMOS POWER MOSFET DATA IRFF110 , 113 ELECTRICAL CHARACTERISTICS - continued IRFF110 IRFF113 'D ion) IRFF110 IRFF113 9fs 3.5 3 1 m hos v G Slthl rDSion) 0.6 0.8 , ) Forward Transconductance Hd - 1.5 A) IRFF110 , IRFF111 Vq s = 5 V IRFF112, IRFF113 Vds " 5V DYNAMIC , _ - IRFF110 IRFF113 MS - Rated iD io n l V q s = 0) 2°o VSD VSD ron trr - - 2.5 2 N


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PDF IRFF112, IRFF113 IRFF110 fd220 IRFD221
2N6802 JANTX

Abstract: No abstract text available
Text: DESIG NATIO N k I m n 0 P DEVICE IRFF024 IRFF110 IRFF120 IRFF130 IRFF210 IRFF220 IRFF230 IRFF310 , Crots Tc = 25°C Reference Voltage MIL-S-19500 (A ) IRFF110 IRFF210 IRFF310 IRFF120 IRFF220 IRFF320 , = 100°C IOR Part Number IRFF110 3.5 2.25 14 15 0.12 ±20 110 5.5 68 5.5 -5 5 to 150 °C 300 (0.63 , °c (Unless otherwise Typ. - - - specified) Max. - - - Part Num ber Min. IRFF024 IRFF110 , IRFF024 IRFF110 IRFF120 IRFF130 IRFF210 N-Channel IRFF220 IRFF230 IRFF310 IRFF320 IRFF330 IRFF420 IRFF430


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PDF I-200 2N6802 JANTX
Not Available

Abstract: No abstract text available
Text: Specified IRFF110 IRFF110R Drain-Source Voltage ( 1 ) . Drain-Gate , Drain-Source On-State Resistance (Note 2) IRFF110 /111, IRFF110R /111R IRFF112/113, IRFF112R/113R - - , Max Rating x 0.8, Vq s = W , T j = +125°C On-State Drain Current (Note 2) IRFF110 /111, IRFF110R , • High Input Impedance Description Terminal Diagram The IRFF110 , IRFF111, IRFF112, and IRFF113 are n-channel enhancement-mode silicon-gate power fleld-effect transistors. IRFF110R , IRFF111R


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PDF IRFF110, IRFF111, IRFF112, IRFF113
irff113

Abstract: TA17441 SS1020
Text: h a f r r is January 1998 IRFF110 , IRFF111, IRFF112, IRFF113 3.0A and 3.5A, 80V and 100V, 0.6 , Corporation 1998 , File Number 1562.2 IRFF110 , IRFF111, IRFF112, IRFF113 Absolute Maximum Ratings , 10 15 15 10 5.0 20 25 25 20 7.5 ns ns ns ns nC 2.0 3.0 - nC nC 5-2 IRFF110 , 1.0 2.5 V ns M-C - 5-3 IRFF110 , IRFF111, IRFF112, IRFF113 Typical Performance Curves U nless O , R E S . O U T P U T C H A R A C T E R IS T IC S 5-4 IRFF110 , IRFF111, IRFF112, IRFF113


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PDF IRFF110, IRFF111, IRFF112, IRFF113 TA17441. RFF113 irff113 TA17441 SS1020
IRFD221

Abstract: 3203 MOSFET
Text: D o 7 TECHNICAL DATA SEMICONDUCTOR IRFF110 IRFF113 Advance Information S m a ll-S ig n , Rated Vd s S* VGS = v (BR)DSS Symbol Vd s s VDGR VGS ÏD 'DM PD T j/ Tstg IRFF110 100 100 20 3.5 , (continued) IRFF110 IRFF113 dss - This document contains information on a new product


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PDF IRFD220-223 IRFD220, IRFD221 IRFF110 IRFF113 IRFF113 3203 MOSFET
Not Available

Abstract: No abstract text available
Text: International sslRectifier Government and Space hexfet power m o sfets Hermetic Package N-Channel Part Number BV d s s (V) RDS(on) (Ohms) lD@ Tr = 25°C · d@ Tq = 100°C (A) R thJC Max. (K/W) Pd @ Tc = 25°C (W) Case Outline Number (1) Case Style (A) 8.0 3.5 3.5 3.5 3.5 6.0 6.0 6.0 6.0 8.0 8.0 8.0 8.0 2.25 2.25 2.25 2.25 3.5 3.5 3.5 3.5 5.5 5.5 5.5 5.5 1.25 1.25 1.25 1.25 2.0 2.0 2.0 2.0 3.0 3.0 3.0 3.0 1.5 1.5 1.5 1.5 2.5 2.5 2.5 2.5 IRFF024 IRFF110 2N6782


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PDF IRFF024 IRFF110 2N6782 JANTX2N6782 JANTXV2N6782 IRFF120 2N6788 JANTX2N6788 JANTXV2N6788 IRFF130
2001 - ciss 200v

Abstract: IRFE310
Text: Part number search for devices beginning " IRFF110 " Semelab Home Datasheets are downloaded as Acrobat PDF files. Fet Products PRODUCT IRFF110 IRFF110-JQR-B Polarity N-Channel N-Channel Package


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PDF IRF9140" IRF9140 IRF9140-JQR-B IRF9140SMD IRF9140SMD-JQR-B O276AB) 1400pF ciss 200v IRFE310
IRFD110

Abstract: IRF5134 1RF542 IRF120 IRF540 IRF611-3 IRFD111 IRF522 IRFD1Z3 IRF510
Text: IRFF110 3.50 0.80 IRF512 4 0.60 IRF510 5 0.4 IRFF122 6 0.30 IRFF120 7 0.25


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PDF O-247 O-204 O-205 O-220 IRFD113 IRFD111 IRFD123 IRFD121 IRFF113 IRFF111 IRFD110 IRF5134 1RF542 IRF120 IRF540 IRF611-3 IRFD111 IRF522 IRFD1Z3 IRF510
IRF510

Abstract: irf540
Text: IRFD120 IRFF112 IRFF110 IRF512 IRF510 IRFF122 IRFF120 IRFF132 IRF122 IRFF130 IRF120 IRF132 IRF130 IRF142


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PDF 4-PIn80 IRFD113 IRFD111 IRFD123 IRFD121 IRFF113 IRFF111 IRF513 IRF511 IRFF123 IRF510 irf540
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