The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
IRFBE30SPBF Vishay Siliconix Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3
IRFBE30PBF Vishay Siliconix Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN
IRFBE30STRLPBF Vishay Siliconix Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3
IRFBE30LPBF Vishay Siliconix Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3
IRFBE30STRL Vishay Siliconix MOSFET N-CH 800V 4.1A D2PAK
IRFBE30STRR Vishay Siliconix MOSFET N-CH 800V 4.1A D2PAK

IRFBE30 equivalent Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2012 - irfbe30

Abstract: No abstract text available
Text: IRFBE30 , SiHFBE30 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , Lead (Pb)-free SnPb TO-220AB IRFBE30PbF SiHFBE30-E3 IRFBE30 SiHFBE30 ABSOLUTE MAXIMUM RATINGS (TC = , ?91000 IRFBE30 , SiHFBE30 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient , FORTH AT www.vishay.com/doc?91000 IRFBE30 , SiHFBE30 Vishay Siliconix TYPICAL CHARACTERISTICS (25 , DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFBE30 , SiHFBE30


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PDF IRFBE30, SiHFBE30 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 irfbe30
irfbe30

Abstract: No abstract text available
Text: International IS Rectifier PD-9.613A IRFBE30 HEXFET® Power MOSFET • Dynamic dv/dt Rating , €” — 62 455 IRFBE30 _ Electrical Characteristics @ Tj = 25 C (unless otherwise specified) IOR , Output Characteristics, Tc=25°C IRFBE30 Q. E < ® O ç 'to O D 10»' TOP Ilv , . Temperature O — go s n il « E c ^ 's q a en 457 IRFBE30 Vqs. Drain-to-Source Voltage (volts , . Maximum Drain Current Vs. Case Temperature IRFBE30 :vdd Fig 10a. Switching Time Test Circuit td(on) lr


OCR Scan
PDF IRFBE30 O-220 T0-220 irfbe30
2014 - Not Available

Abstract: No abstract text available
Text: IRFBE30 , SiHFBE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) â , SiHFBE30-E3 IRFBE30 SiHFBE30 Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless , ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFBE30 , SiHFBE30 , ?91000 IRFBE30 , SiHFBE30 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig. 1 - , DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFBE30 , SiHFBE30 Vishay Siliconix Fig. 5 - Typical


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PDF IRFBE30, SiHFBE30 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A
2015 - Not Available

Abstract: No abstract text available
Text: IRFBE30 , SiHFBE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) â , SiHFBE30-E3 IRFBE30 SiHFBE30 Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless , ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFBE30 , SiHFBE30 , ?91000 IRFBE30 , SiHFBE30 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig. 1 - , DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFBE30 , SiHFBE30 Vishay Siliconix Fig. 5 - Typical


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PDF IRFBE30, SiHFBE30 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A
2008 - IRFBE30

Abstract: No abstract text available
Text: IRFBE30 , SiHFBE30 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , -220 IRFBE30PbF SiHFBE30-E3 IRFBE30 SiHFBE30 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted , , exemptions may apply Document Number: 91118 S-81262-Rev. A, 07-Jul-08 www.vishay.com 1 IRFBE30 , SiHFBE30 , -81262-Rev. A, 07-Jul-08 IRFBE30 , SiHFBE30 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless , . Temperature Document Number: 91118 S-81262-Rev. A, 07-Jul-08 www.vishay.com 3 IRFBE30 , SiHFBE30


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PDF IRFBE30, SiHFBE30 O-220 O-220 12-Mar-07 IRFBE30
2009 - irfbe30

Abstract: IRFBE30 equivalent IRFBE30PBF SiHFBE30 SiHFBE30-E3
Text: IRFBE30 , SiHFBE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) · , MOSFET ORDERING INFORMATION Package TO-220 IRFBE30PbF SiHFBE30-E3 IRFBE30 SiHFBE30 Lead (Pb , -Jul-08 www.vishay.com 1 IRFBE30 , SiHFBE30 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP , S-81262-Rev. A, 07-Jul-08 IRFBE30 , SiHFBE30 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C , IRFBE30 , SiHFBE30 Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7


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PDF IRFBE30, SiHFBE30 O-220 O-220 18-Jul-08 irfbe30 IRFBE30 equivalent IRFBE30PBF SiHFBE30-E3
Not Available

Abstract: No abstract text available
Text: IRFBE30 , SiHFBE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) â , SiHFBE30-E3 IRFBE30 SiHFBE30 Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless , ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFBE30 , SiHFBE30 , TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFBE30 , SiHFBE30 Vishay Siliconix , www.vishay.com/doc?91000 IRFBE30 , SiHFBE30 Vishay Siliconix Fig. 5 - Typical Capacitance vs


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PDF IRFBE30, SiHFBE30 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
2012 - irfbe30

Abstract: No abstract text available
Text: IRFBE30 , SiHFBE30 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , Lead (Pb)-free SnPb TO-220AB IRFBE30PbF SiHFBE30-E3 IRFBE30 SiHFBE30 ABSOLUTE MAXIMUM RATINGS (TC = , ?91000 IRFBE30 , SiHFBE30 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient , FORTH AT www.vishay.com/doc?91000 IRFBE30 , SiHFBE30 Vishay Siliconix TYPICAL CHARACTERISTICS (25 , DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFBE30 , SiHFBE30


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PDF IRFBE30, SiHFBE30 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 irfbe30
2008 - Not Available

Abstract: No abstract text available
Text: IRFBE30 Power MOSFET FEATURES D TO-220 • Dynamic dV/dt Rating • Repetitive , INFORMATION Package TO-220 IRFBE30PbF SiHFBE30-E3 IRFBE30 SiHFBE30 Lead (Pb)-free SnPb ABSOLUTE , 1 www.kersemi.com IRFBE30 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX , www.kersemi.com IRFBE30 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig. 1 - Typical Output , www.kersemi.com IRFBE30 Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical


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PDF IRFBE30 O-220 O-220 IRFBE30covery
Not Available

Abstract: No abstract text available
Text: International k? Rectifier r PD-9.613A IRFBE30 HHXFET® Power MOSFET • • • â , €” Rejc 455 Typ. — 0.50 — Max. Units 1.0 — 62 °C/W ■IRFBE30 , ■R INTERNATIONAL RECTIFIER IRFBE30 b5E D Id . D rain Current (Amps) W , – INTERNATIONAL RECTIFIER b5E D l^R Capacitance (pF) IRFBE30 MÔ55M52 DOIM^? 532 ■INR Qg , IRFBE30 bSE D Rd V ds > - VS f Y -A M f D.U.T. " I I ft. 0 - V dd Id. D rain


OCR Scan
PDF IRFBE30 554S2
2013 - Not Available

Abstract: No abstract text available
Text: IRFBE30 , SiHFBE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) â , SiHFBE30-E3 IRFBE30 SiHFBE30 Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless , ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFBE30 , SiHFBE30 , ?91000 IRFBE30 , SiHFBE30 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig. 1 - , DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFBE30 , SiHFBE30 Vishay Siliconix Fig. 5 - Typical


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PDF IRFBE30, SiHFBE30 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A
Not Available

Abstract: No abstract text available
Text: IRFBE30 , SiHFBE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) â , SiHFBE30-E3 IRFBE30 SiHFBE30 Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless , ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFBE30 , SiHFBE30 , ?91000 IRFBE30 , SiHFBE30 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig. 1 - , DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFBE30 , SiHFBE30 Vishay Siliconix Fig. 5 - Typical


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PDF IRFBE30, SiHFBE30 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A
2011 - irfbe30

Abstract: No abstract text available
Text: IRFBE30 , SiHFBE30 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , Lead (Pb)-free SnPb TO-220AB IRFBE30PbF SiHFBE30-E3 IRFBE30 SiHFBE30 ABSOLUTE MAXIMUM RATINGS (TC = , ?91000 IRFBE30 , SiHFBE30 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient , FORTH AT www.vishay.com/doc?91000 IRFBE30 , SiHFBE30 Vishay Siliconix TYPICAL CHARACTERISTICS (25 , DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFBE30 , SiHFBE30


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PDF IRFBE30, SiHFBE30 2002/95/EC O-220AB 11-Mar-11 irfbe30
IRFBE30

Abstract: SiHFBE30 SiHFBE30-E3 irfbe30pbf
Text: IRFBE30 , SiHFBE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) · , SiHFBE30-E3 IRFBE30 SiHFBE30 Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless , DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFBE30 , SiHFBE30 Vishay Siliconix THERMAL , ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFBE30 , SiHFBE30 , www.vishay.com/doc?91000 IRFBE30 , SiHFBE30 Vishay Siliconix Fig. 5 - Typical Capacitance vs


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PDF IRFBE30, SiHFBE30 2002/95/EC O-220AB O-220AB 11-Mar-11 IRFBE30 SiHFBE30-E3 irfbe30pbf
IRF744

Abstract: IRFBC10LC irf630 irf640 IRFZ44 MOSFETs IRF1310
Text: IRFBC20 IRFBC30 IRFBC40 IRFBE20 IRFBE30 IRFBF20 IRFBF30 IRFBG20 IRFBG30 Part number in bold indicates


OCR Scan
PDF 22oab T0-22QAB IRF740LC IRF840LC IRFBC40LC IRFBC10LC T0-220AB O-22QAB IRFZ46 IRF1010 IRF744 IRFBC10LC irf630 irf640 IRFZ44 MOSFETs IRF1310
1RFPC50

Abstract: 1RFPC50LC IRF840LC IRlz24n IRFz44n IRF540n 1RFPc
Text: IRF744 IRF820 IRF830 IRF840 IRFBC20 IRFBC30 IRFBC40 IRFBE20 IRFBE30 IRFBF20 500 500 500 600 600


OCR Scan
PDF T0-220AB IRF740LC IRF840LC IRFBC40LC IRL3803 IRL3705N IRLZ14 IRLZ24N IRLZ34N IRLZ44N 1RFPC50 1RFPC50LC IRFz44n IRF540n 1RFPc
FL110

Abstract: LL110 irf7408 IRC540 equivalent lr014 IRL1Z14G IRFC024 IRFBE30 equivalent irfbc10lc IRFCG50
Text: IRFBC20 IRFBC30 IRFBC40 IRFBE20 IRFBE30 IRFBF20 IRFBF30 IRFBG20 IRFBG30 F-27 H EXFET T0 , 0.30 0.30 0.30 0.25 0.25 0.25 0.64 0.51 0.51 0.51 0.51 0.51 0.51 0.25 0.25 0.25 Equivalent Device , IRFBE20 IRFBF20 IRFBG20 IRFZ34 IRF530 IRF630 IRF634 IRF730 IRF830 IRFBC30 IRFBE30 IRFBF30 IRFBG30 IRFZ44 , Equivalent Device Type P-Channel HEXFETs 1 1 1 2 2 2 3 3 3 4 4 4 IRFC9014 IR FC 9 110 IRFC9210 IRFC9024 , 0.64 0.51 0.51 0.51 0.51 0.51 Equivalent Device Type IRCZ24 IRCZ34 IRC530 IRC630 IRC634 IRC730


OCR Scan
PDF OT-89 OT-89 IRCC044 IRCC140 IRCC240 IRCC244 IRCC340 IRCC440 IRCC054 FL110 LL110 irf7408 IRC540 equivalent lr014 IRL1Z14G IRFC024 IRFBE30 equivalent irfbc10lc IRFCG50
1997 - SSH6N80

Abstract: IRF640 equivalent buz100 equivalent ste38NA50 irf540 equivalent stp2na60 buz10 equivalent BUK444 equivalent 2SK2700 equivalent BUZ71 equivalent
Text: IRF842 IRF843 IRFBC20 IRFBC30 IRFBC40 IRFBC40 IRFBC42 IRFBE20 IRFBE30 IRFBF30 IRFBG30 IRFI520G , EQUIVALENT STE26NA90 STE250N06 STE250N06 STE30NA50 STE26NA90 STE30NA50 STE30NA50-DA STE30NA50-DK , STANDARD SGS-THOMSON EQUIVALENT STP3NA50FI STP3NA60 STP3NA60FI STP3NA80 STP3NA80FI STP3NA90 , SGS-THOMSON EQUIVALENT STW16NA40 STW16NA60 STW20NA50 STW20NB50 STW33N20 STW50N10 STW5NA90 STW60N10


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PDF 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 SSH6N80 IRF640 equivalent buz100 equivalent ste38NA50 irf540 equivalent stp2na60 buz10 equivalent BUK444 equivalent 2SK2700 equivalent BUZ71 equivalent
MTM13N50E

Abstract: P40N10 p50n05 8n50e 24N40 motorola 20n50e Power MOSFET Cross Reference Guide TP50N05E IRF510 mosfet irf640 33N10E
Text: IRF9Z22 IRF9Z24 IRF9Z30 IRF9Z32 IRF9Z34 IRFBC20 IRFBC30 IRFBC32 IRFBC40 IRFBC42 IRFBE20 IRFBE22 IRFBE30


OCR Scan
PDF BUZ10 BUZ11 BUZ11A BUZ11S2 BUZ15 BUZ171 BUZ20 BUZ21 BUZ23 BUZ31 MTM13N50E P40N10 p50n05 8n50e 24N40 motorola 20n50e Power MOSFET Cross Reference Guide TP50N05E IRF510 mosfet irf640 33N10E
IRF460 in TO220

Abstract: IRF09110 IRF448 of IRF9540 and IRF540 irf460 switching Application of irf250 IRF244 IRF250 TO-247 irf460 to247 irf234 n
Text: IRF830 IRF840 IRFBC20 IRFBC30 IRFBC40 IRFBE20 IRFBE30 IRFBF20 IRFBF30 IRFBG20 IRFBG30 Drain Source


OCR Scan
PDF T0-240AA IRF460 in TO220 IRF09110 IRF448 of IRF9540 and IRF540 irf460 switching Application of irf250 IRF244 IRF250 TO-247 irf460 to247 irf234 n
mosfet cross reference

Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
Text: IRFBE20 IRFBE30 IRFBG30 IRFL014 IRFL4310 IRFL9014 IRFM014A IRFP140 IRFP150 IRFP240 IRFP244


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1999 - IRF9310

Abstract: mosfet cross reference IRF 949 korea IRFZ44 replacement BUZ 36 philips master replacement guide IRF540 substitution 2SK2146 MOSFET TOSHIBA 2SK IRF510 substitution
Text: IRFBE20 IRFBE30 IRFBG30 IRFL014 IRFL4310 IRFL9014 IRFM014A IRFP140 IRFP150 IRFP240 IRFP244 IRFP250 IRFP254


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PDF device2176 r14153 CR108/D IRF9310 mosfet cross reference IRF 949 korea IRFZ44 replacement BUZ 36 philips master replacement guide IRF540 substitution 2SK2146 MOSFET TOSHIBA 2SK IRF510 substitution
1999 - IRFZ44G

Abstract: IRF840G IRFZ34G IRFBC30G IRF9540G IRF640G IRFBC40G IRFP140 equivalent transistor IRFP140N transistor 9721
Text: Fit Rate / Equivalent Device Hours Traditionally, reliability results have been presented in terms , . The values reported in this report are at a 60% upper confidence limit and the equivalent device hours , TEST TIME (hours) 2008 2080 2008 2080 FAILURES # 0 0 0 0 EQUIVALENT FAILURE RATE @ DEV-HRS 90°C & 60 , 2008 2008 2008 2008 2008 2008 2008 2011 FAILURES # 0 0 0 0 0 0 0 0 0 0 0 0 0 0 EQUIVALENT FAILURE RATE , 1000 ACTUAL TEST TIME (hours) 2008 2016 2008 1504 FAILURES # 0 0 0 0 EQUIVALENT FAILURE RATE @ DEV-HRS


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PDF IRFIZ34N IRFIZ44N IRFIZ48N IRFI1010N IRFI520N IRFI530N IRFI1310N IRLI3705N IRLIZ24N IRLIZ44N IRFZ44G IRF840G IRFZ34G IRFBC30G IRF9540G IRF640G IRFBC40G IRFP140 equivalent transistor IRFP140N transistor 9721
2004 - PLC modem

Abstract: QE R523 s m r707 qe R714 bd3 c531 BD3 c502 diode QE R519 QE R611 zener diode c531 BD3 c502
Text: IRFBE30 R528 C519 .47uF 16V L504 BEAD +24V 2 1 1 8 C526 2 150pF 100V 2


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2002 - fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 STP55NF06 AND ITS EQUIVALENT FSD6680 SFP70N03 HGTG*N60A4D irf630 irf640
Text: IRFBE30 IRFBF30 IRFBG30 IRFI520G IRFI530G IRFI540G IRFI620G IRFI630G IRFI640G IRFI720G IRFI730G


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PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 STP55NF06 AND ITS EQUIVALENT FSD6680 SFP70N03 HGTG*N60A4D irf630 irf640
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