The Datasheet Archive

Top Results (5)

Part Manufacturer Description Datasheet Download Buy Part
IRF9Z34NSTRRPBF Infineon Technologies AG Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
IRF9Z34NSPBF Infineon Technologies AG Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
IRF9Z34NPBF Infineon Technologies AG Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
IRF9Z34NSTRLPBF Infineon Technologies AG Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
AUIRF9Z34N Infineon Technologies AG Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3
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Part Manufacturer Supplier Stock Best Price Price Each Buy Part
AUIRF9Z34N Infineon Technologies AG TME Electronic Components 27 $1.37 $0.90
AUIRF9Z34N Infineon Technologies AG Avnet 380 $0.75 $0.66
AUIRF9Z34N Infineon Technologies AG Farnell element14 1 £1.12 £0.69
AUIRF9Z34N Infineon Technologies AG element14 Asia-Pacific 22 $1.94 $1.02
AUIRF9Z34N Infineon Technologies AG Chip1Stop 1,000 $1.92 $0.90
AUIRF9Z34N International Rectifier ComS.I.T. 30 - -
AUIRF9Z34N Infineon Technologies AG RS Components 30 £1.23 £1.00
AUIRF9Z34N International Rectifier Rochester Electronics 2,050 $0.87 $0.71
AUIRF9Z34N Infineon Technologies AG Allied Electronics & Automation - $1.07 $1.07
IRF9Z34N International Rectifier Bristol Electronics 12 - -
IRF9Z34N International Rectifier Chip One Exchange 150 - -
IRF9Z34NLPBF Infineon Technologies AG Chip1Stop 641 $1.27 $1.01
IRF9Z34NLPBF Infineon Technologies AG Newark element14 37 $2.11 $0.80
IRF9Z34NLPBF Infineon Technologies AG TME Electronic Components 64 $0.98 $0.74
IRF9Z34NLPBF International Rectifier ComS.I.T. 700 - -
IRF9Z34NPBF Infineon Technologies AG Newark element14 1,090 $1.01 $0.54
IRF9Z34NPBF Infineon Technologies AG Chip1Stop 1,010 $1.05 $0.33
IRF9Z34NPBF Infineon Technologies AG New Advantage Corporation 19,233 $0.86 $0.78
IRF9Z34NPBF Infineon Technologies AG Future Electronics 24,041 $0.43 $0.34
IRF9Z34NPBF Infineon Technologies AG Rochester Electronics 373 $0.36 $0.29
IRF9Z34NPBF Infineon Technologies AG Newark element14 1,506 $0.44 $0.44
IRF9Z34NPBF International Rectifier Rochester Electronics 41 $0.49 $0.40
IRF9Z34NPBF Infineon Technologies AG Avnet 33,543 $0.67 $0.38
IRF9Z34NPBF Infineon Technologies AG RS Components 339 £1.00 £0.53
IRF9Z34NPBF Chip One Exchange 75 - -
IRF9Z34NPBF Infineon Technologies AG Farnell element14 1,305 £0.55 £0.39
IRF9Z34NPBF Infineon Technologies AG RS Components 50 £0.44 £0.26
IRF9Z34NPBF Infineon Technologies AG element14 Asia-Pacific 1,348 $1.12 $0.43
IRF9Z34NPBF Infineon Technologies AG TME Electronic Components 393 $0.65 $0.34
IRF9Z34NPBF Infineon Technologies AG Chip1Stop 20,780 $1.74 $0.43
IRF9Z34NPBF Infineon Technologies AG Avnet 5,849 €0.45 €0.33
IRF9Z34NPBF Infineon Technologies AG Schukat electronic 17,390 €0.59 €0.28
IRF9Z34NPBF Infineon Technologies AG Rutronik - $0.45 $0.35
IRF9Z34NPBF Infineon Technologies AG Chip1Stop 1,060 $0.45 $0.35
IRF9Z34NPBF International Rectifier ComS.I.T. 50 - -
IRF9Z34NPBF Infineon Technologies AG Allied Electronics & Automation 211 $1.60 $0.94
IRF9Z34NS International Rectifier ComS.I.T. 39 - -
IRF9Z34NSPBF Infineon Technologies AG Schukat electronic 1,870 €0.64 €0.33
IRF9Z34NSPBF Infineon Technologies AG TME Electronic Components 1,496 $0.71 $0.46
IRF9Z34NSPBF Infineon Technologies AG RS Components 253 £1.00 £0.38
IRF9Z34NSPBF Infineon Technologies AG Allied Electronics & Automation - $1.87 $1.87
IRF9Z34NSPBF Infineon Technologies AG Farnell element14 278 £0.88 £0.38
IRF9Z34NSPBF Infineon Technologies AG Chip1Stop 4,230 $2.22 $0.54
IRF9Z34NSPBF Infineon Technologies AG element14 Asia-Pacific 278 $1.50 $0.68
IRF9Z34NSPBF Infineon Technologies AG Avnet 15,428 €1.03 €0.47
IRF9Z34NSTRL Intel Corporation Chip One Exchange 800 - -
IRF9Z34NSTRLPBF Infineon Technologies AG Future Electronics 1,600 $0.48 $0.47
IRF9Z34NSTRLPBF Infineon Technologies AG Future Electronics - $1.16 $0.55
IRF9Z34NSTRLPBF Infineon Technologies AG Schukat electronic 570 €0.60 €0.29
IRF9Z34NSTRLPBF Infineon Technologies AG Rutronik 800 $0.50 $0.39
IRF9Z34NSTRLPBF Infineon Technologies AG TME Electronic Components 444 $0.67 $0.40
IRF9Z34NSTRLPBF Infineon Technologies AG Avnet 3,600 €0.57 €0.56
IRF9Z34NSTRLPBF Infineon Technologies AG Farnell element14 1,612 £0.86 £0.41
IRF9Z34NSTRLPBF Infineon Technologies AG element14 Asia-Pacific 1,583 $1.44 $0.94
IRF9Z34NSTRLPBF Infineon Technologies AG Allied Electronics & Automation - $1.69 $1.44
IRF9Z34NSTRLPBF Infineon Technologies AG Newark element14 1,582 $1.17 $0.68
IRF9Z34NSTRRPBF Infineon Technologies AG Allied Electronics & Automation - $0.78 $0.74
IRF9Z34NSTRRPBF Infineon Technologies AG TME Electronic Components 332 $0.67 $0.40
IRF9Z34NSTRRPBF Infineon Technologies AG Future Electronics - $0.46 $0.44
IRF9Z34NSTRRPBF Infineon Technologies AG New Advantage Corporation 1,600 $0.57 $0.53
IRF9Z34NSTRRPBF Infineon Technologies AG Avnet 4,000 €0.43 €0.28

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IRF9Z34N datasheet (22)

Part Manufacturer Description Type PDF
IRF9Z34N International Rectifier -55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package; A IRF9Z34N with Standard Packaging Original PDF
IRF9Z34N International Rectifier Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A) Original PDF
IRF9Z34N Toshiba Power MOSFETs Cross Reference Guide Original PDF
IRF9Z34N International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, P-Channel, Power, -60V, -18A, Pkg Style TO-220AB Scan PDF
IRF9Z34NL International Rectifier -55V Single P-Channel HEXFET Power MOSFET in a TO-262 package; A IRF9Z34NL with Standard Packaging Original PDF
IRF9Z34NL International Rectifier HEXFET Power Mosfet Original PDF
IRF9Z34NLPBF International Rectifier Original PDF
IRF9Z34NLPBF International Rectifier -55V Single P-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRF9Z34NL with Lead Free Packaging Original PDF
IRF9Z34NPBF International Rectifier -55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package Original PDF
IRF9Z34NPBF International Rectifier -55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package; Similar to the IRF9Z34N with Lead-Free Packaging. Original PDF
IRF9Z34NS International Rectifier -55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; A IRF9Z34NS with Standard Packaging Original PDF
IRF9Z34NS International Rectifier Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A) Original PDF
IRF9Z34NSPBF International Rectifier -55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF9Z34NS with Lead Free Packaging Original PDF
IRF9Z34NSPBF International Rectifier Original PDF
IRF9Z34NSTRL International Rectifier P-channel power MOSFET for fast switching, 55V, 19A Original PDF
IRF9Z34NSTRL International Rectifier -55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; A IRF9Z34NS with Tape and Reel Left Packaging Original PDF
IRF9Z34NSTRLPBF International Rectifier Original PDF
IRF9Z34NSTRLPBF International Rectifier -55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF9Z34NSTRL with Lead Free Packaging Original PDF
IRF9Z34NSTRR International Rectifier P-channel power MOSFET for fast switching, 55V, 19A Original PDF
IRF9Z34NSTRR International Rectifier -55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; A IRF9Z34NS with Tape and Reel Right Packaging Original PDF

IRF9Z34N Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
IRF9Z34N

Abstract: No abstract text available
Text: International I©R Rectifier • • • • • • PD - 9.1485A IRF9Z34N , - Parameter Rwc Rees R sja 2.7 -62 °C/W 435 IRF9Z34N International , 0Q2Ô531 371 IRF9Z34N International IOR Rectifier 0 .1 i to -Vpg , Drain-to-Source , . Temperature 4ÔSS452 DDSÛ532 20Ô IRF9Z34N 1200 International IOR Rectifier f = 1MHz V OS = OV , , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area ÜD2Ô533 144 IRF9Z34N -'o- Drain


OCR Scan
PDF IRF9Z34N O-220 IRF9Z34N
1RF9Z34N

Abstract: IRF9Z34N 1RF9Z34 RF1010
Text: IRF9Z34N HEXFET® Power MOSFET = -55V V dss ^ D S (o n ) = 0 . 1 0 Q Description Fifth G eneration , Junction-to-Ambient Typ. - 0.50 - Max. 2.7 -62 Units °C/W 6/19/97 IRF9Z34N Electrical , < V|BR)dss. T j < 175°C © Pulse width < 300ps; duty cycle < 2%. S Ä ' IRF9Z34N 100 V^g , IRF9Z34N International IO R Rectifie^ 1 10 100 0 10 20 30 40 -VDS , . Maximum Safe Operating Area In te rna tional IO R Rectifier IRF9Z34N ' ' d - Drain Current < A m


OCR Scan
PDF IRF9Z34N 1RF9Z34N IRF9Z34N 1RF9Z34 RF1010
irf9z34n

Abstract: No abstract text available
Text: 9.1485B IRF9Z34N HEXFET® Power M OSFET V dss = -55V RDS(on) = 0 .1 0 ft Id = -19A Absolute Maximum , 0V PF V DS = -25V / = 1.0MHz, See Fig. 5 ^_ P / h~?\ ¿ z i s IRF9Z34N v/°c Q. V S »A nA , IRF9Z34N 0.1 100 -V p g , D ra in -to -S o u rce V o lta g e (V) -V p g , D ra in -to -S o u , On-Resistance Vs. Temperature IRF9Z34N International IOR Rectifier 1 10 100 0 10 20 , Forward Voltage Fig 8. Maximum Safe Operating Area Inte rna tional Iw R Rectifier IRF9Z34N


OCR Scan
PDF O-220 irf9z34n
1997 - IRF9Z34N

Abstract: No abstract text available
Text: PD - 9.1485B IRF9Z34N HEXFET® Power MOSFET Advanced Process Technology Dynamic dv/dt Rating , Typ. Max. Units ­­­ 0.50 ­­­ 2.2 ­­­ 62 °C/W 8/25/97 IRF9Z34N Electrical , , di/dt -290A/µs, VDD V(BR)DSS , TJ 175°C Pulse width 300µs; duty cycle 2%. IRF9Z34N 100 , ) Fig 4. Normalized On-Resistance Vs. Temperature IRF9Z34N V GS C is s C rss C oss C , C a p , Safe Operating Area 100 IRF9Z34N RD 20 VDS VGS - ID , Drain Current (A) D.U.T


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PDF 1485B IRF9Z34N O-220 IRF9Z34N
1996 - IRF9Z34N

Abstract: No abstract text available
Text: Previous Datasheet Index Next Data Sheet PD 9.2001 IRF9Z34N PRELIMINARY HEXFET , °C/W To Order 7/24/96 Previous Datasheet Index Next Data Sheet IRF9Z34N Electrical , Previous Datasheet Index Next Data Sheet IRF9Z34N 100 100 VGS - 15V - 10V - 8.0V - 7.0V , IRF9Z34N V GS C is s C rss C oss C , C a p a c ita n c e (p F ) 1000 20 = 0 V, f = 1M H z , Index Next Data Sheet IRF9Z34N VGS D.U.T. RG - 16 + -I D , D ra in C u rre n t


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PDF IRF9Z34N O-220 IRF9Z34N
1997 - IRF9Z34N

Abstract: IRF9Z34
Text: PD - 9.1485B IRF9Z34N HEXFET® Power MOSFET Advanced Process Technology Dynamic dv/dt Rating , Typ. Max. Units ­­­ 0.50 ­­­ 2.2 ­­­ 62 °C/W 8/25/97 IRF9Z34N Electrical , , di/dt -290A/µs, VDD V(BR)DSS , TJ 175°C Pulse width 300µs; duty cycle 2%. IRF9Z34N 100 , ) Fig 4. Normalized On-Resistance Vs. Temperature IRF9Z34N V GS C is s C rss C oss C , C a p , Safe Operating Area 100 IRF9Z34N RD 20 VDS VGS - ID , Drain Current (A) D.U.T


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PDF 1485B IRF9Z34N O-220 IRF9Z34N IRF9Z34
IRF9Z34N

Abstract: P-Channel irf
Text: PD 9.2001 IRF9Z34N PRELIMINARY HEXFET® Power MOSFET l l l l l l Advanced Process , 7/24/96 IRF9Z34N Electrical Characteristics @ TJ = 25°C (unless otherwise specified) RDS(on , °C Pulse width 300µs; duty cycle 2%. IRF9Z34N 100 100 VGS - 15V - 10V - 8.0V - 7.0V - , . Normalized On-Resistance Vs. Temperature IRF9Z34N V GS C is s C rss C oss C , C a p a c ita n c e , Operating Area 100 IRF9Z34N VGS D.U.T. RG - 16 + -I D , D ra in C u rre n t (A m p


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PDF IRF9Z34N O-220 IRF9Z34N P-Channel irf
IRF9Z34N

Abstract: 1682V
Text: °C Operating Temperature Fast Switching P-Channel Fuily Avalanche Rated PD - 9.1485B IRF9Z34N HEXFET , bss Igss Qg QgS IRF9Z34N Min. T yp . M ax. U n its -55 - - -2.0 4.2 _ - - -0.05 - - - _ , %. www.irf.com C-281 IRF9Z34N International IOR Rectifier 100 Current (A) ÌZ o o O C /D B À Q , . Temperature www.irf.com International IOR Rectifier IRF9Z34N 20 30 40 -V DS , D , C -283 IRF9Z34N International IOR Rectifier T q , C a s e T em p eratu re ( C


OCR Scan
PDF 1485B IRF9Z34N IRF9Z34N 1682V
irf9z34n

Abstract: No abstract text available
Text: PD - 9.1485B IRF9Z34N HEXFET® Power MOSFET Advanced Process Technology Dynamic dv/dt Rating , €“ 0.50 ––– 2.2 ––– 62 °C/W 8/25/97 IRF9Z34N Electrical Characteristics @ TJ , ‰¤ 300µs; duty cycle ≤ 2%. IRF9Z34N 100 100 VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V , IRF9Z34N V GS C is s C rss C oss C , C a p a cita n ce (p F ) 1000 20 = 0 V, f = 1M H z = , , Drain-to-Source V oltage (V ) Fig 8. Maximum Safe Operating Area 100 IRF9Z34N RD 20 VDS VGS -


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PDF 1485B IRF9Z34N O-220 app245, irf9z34n
12v 100w amplifier

Abstract: 12v to Amplifier 100w 100w audio amplifier circuit diagram class D IRFZ24N equivalent 12v 100W regulator 100w bass circuit J2 Q24A B IRF9Z34N 100w mosfet audio amplifier circuit diagram 100W AUDIO AMPLIFIER
Text: Data AK4730 Rch 10pin Header Control Data E-Bridge AKM recommend MOSFETs of IRF9Z34N , Q11 IRF9Z34N Q12 IRF9Z34N Q13 IRFZ24N C79 1u C80 1u C81 0.1u C82 0.1u B , C122 0.1u C123 0.1u C124 1u Q27 Q28 IRF9Z34N IRFZ24N IRF9Z34N Q29 C125 1u


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PDF AKD4730-100W] AKD4730-100W AK4730-100W AKD4730-100W AK4730, AKD4730 2200u 12v 100w amplifier 12v to Amplifier 100w 100w audio amplifier circuit diagram class D IRFZ24N equivalent 12v 100W regulator 100w bass circuit J2 Q24A B IRF9Z34N 100w mosfet audio amplifier circuit diagram 100W AUDIO AMPLIFIER
1RFBG30

Abstract: 1RF6215 IRF4905 IRF9540N IRF9Z34N 90616 IRFbf30 P-channel power irf9z24n
Text: International I© R Rectifier HEXFET® Power MOSFETs V(BR)DSS Part Number d >D Continuous Drain-to- Source ®DS(on| R0 PD Continuous Drain Current On-State Drain Current Breakdown Max. Thermal Max. Power 100° Resistance Voltage 25°C Resistance Dissipation (°C/W) (W) (A) (V) (A) (H Fax r on Case Demand 0 « TM » Number Key Through-Hole Packages IRFBF30 IRFBG20 1RFBG30 P-Channel IRF9Z24N IRF9Z34N IRF5305 IRF4905 IRF9530N IRF9540N 1RF52I0 1RF6215 -55 -55 -55 -55 -100 -100 -100 -150


OCR Scan
PDF IRFBF30 IRFBG20 1RFBG30 IRF9Z24N IRF9Z34N IRF5305 IRF4905 IRF9530N IRF9540N 1RF52I0 1RF6215 90616 IRFbf30 P-channel power
IXTH7P50

Abstract: IRF7342 IRF7205 T0-220AB T092 irfp9240 IRFD9120 IRFD9110 IRF5210S BSS84
Text: -18 -55 0,11 57 T0252AA IRF9Z34N -19 -55 0,1 68 T0220AB IRF9Z34NS -19 -55 0,1 68 T0263 IRFP9140 -21


OCR Scan
PDF BSS84 BSS92 BS250 BSS83 IRF5210S T0263 IRFD9210 IRFD9220 IRFD9110 IRFD9120 IXTH7P50 IRF7342 IRF7205 T0-220AB T092 irfp9240
1997 - irf 9246

Abstract: IRF9Z34N
Text: IRF9Z34N Package Outline TO-220AB Outline Dimensions are shown in millimeters (inches) 2 . 8 7 ( .1 1 3 ) 2 . 6 2 ( .1 0 3 ) 1 0 . 5 4 (. 4 1 5 ) 1 0 . 2 9 (. 4 0 5 ) -B - 3 . 7 8 (. 1 4 9 ) 3 . 5 4 (. 1 3 9 ) 4 . 6 9 ( .1 8 5 ) 4 . 2 0 ( .1 6 5 ) -A - 1 .3 2 (. 0 5 2 ) 1 .2 2 (. 0 4 8 ) 6 . 4 7 (. 2 5 5 ) 6 . 1 0 (. 2 4 0 ) 4 1 5 . 2 4 ( .6 0 0 ) 1 4 . 8 4 ( .5 8 4 ) 1 . 1 5 ( .0 4 5 ) M IN 1 2 1 4 . 0 9 (.5 5 5 ) 1 3 . 4 7 (.5 3 0 ) 3X 1 .4 0


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PDF IRF9Z34N O-220AB irf 9246 IRF9Z34N
T0252AA

Abstract: T0263 BSS83 IRF7205 IRFR5305 T0-220AB IRF7342 IRF7204 IRF5305 dip4
Text: T0263 IRF7342 -55 -3,4 0,105 2 S08 IRF9Z34N -55 -19 0,1 68 T0220AB IRF9Z34NS -55 -19 0,1 68 T0263


OCR Scan
PDF SI4465DY SI4965DY IRF7204 IRF7304 SI4963DY SI9430DY SI9435DY SI9933ADY SI9953DY IRF7205 T0252AA T0263 BSS83 IRFR5305 T0-220AB IRF7342 IRF5305 dip4
2003 - IRF9Z34N

Abstract: No abstract text available
Text: -10A, di/dt -290A/µs, VDD V(BR)DSS, Uses IRF9Z34N data and test conditions max. junction


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PDF IRFI9Z34NPbF O-220 IRF9Z34N
1998 - IRF4905 equivalent

Abstract: 800v irf IRFBE30 equivalent transistor equivalent irf510 IRF3415 equivalent IRF3205 IRF1010E IRFBg30 equivalent IRFP064N equivalent IRF3205 equivalent
Text: IRF9Z34N 91485 0.060 IRF5305 91385 0.020 IRF4905 91280 IRFI4905 91526 10/97 TBD


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PDF O-220 O-247 IRL3302 IRL3202 9169IRFPC50LC IRFBC40LC IRFIBC40GLC IRFBE30 IRFIBE30G IRF4905 equivalent 800v irf IRFBE30 equivalent transistor equivalent irf510 IRF3415 equivalent IRF3205 IRF1010E IRFBg30 equivalent IRFP064N equivalent IRF3205 equivalent
1999 - irf510 switch

Abstract: IRFBA40N60C IRF634L IRF540NL IRL2505 800v irf IRF9540NL IRFU3910 IRL3215 91811
Text: 91506 IRFU5505 91610 IRFU5305 91402 IRF9Z24NL 91742 IRF9Z34NL 91525 IRF5305L 91386 IRF9Z24N 91484 IRF9Z34N 91485 IRF5305 91385 -55 V 0.110 0.060 Switch Technical Marketing Page 1 6/14/99


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PDF O-262 O-220 IRL3302 IRL3202 IRL3102 IRL3402 IRL3502 Super220TM O-247 irf510 switch IRFBA40N60C IRF634L IRF540NL IRL2505 800v irf IRF9540NL IRFU3910 IRL3215 91811
Not Available

Abstract: No abstract text available
Text: ; duty cycle < 2%, © t = 60s, / = 60Hz @ Uses IRF9Z34N data and test conditions ® ^sd ' -10A, di/dt


OCR Scan
PDF O-22Q IRFI9Z34N C-319
irf1010e equivalent

Abstract: irfp250n equivalent IRF744 equivalent IRFP260n equivalent IRF730A equivalent IRF9540N equivalent IRFBE30 equivalent IRF4905 equivalent irfp260n IRFU9120 equivalent
Text: –100 0.4800 –6.50 39.00 IRF9Z34N * –60 0.1400 –18.00 88.00 IRFP048N 55 0.0160 62.00 130.00 IRFU9120


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PDF O-220AB O-220 IRFZ24N* IRFIZ24N IRFD024 IRF1010E* IRFI1310N IRFD014 IRFZ44E* IRFI540N irf1010e equivalent irfp250n equivalent IRF744 equivalent IRFP260n equivalent IRF730A equivalent IRF9540N equivalent IRFBE30 equivalent IRF4905 equivalent irfp260n IRFU9120 equivalent
2003 - IRF9Z34N

Abstract: low threshold mosfet p-channel TO-220
Text: -10A, di/dt -290A/µs, VDD V(BR)DSS, Uses IRF9Z34N data and test conditions max. junction


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PDF IRFI9Z34NPbF O-220 IRF9Z34N low threshold mosfet p-channel TO-220
irf 425

Abstract: ICL8038CCPD HSMS-2820-BLK HSDL-1001-001 icl8038ccjd IRF 315 HSMP 2820 ICM7211AMIPL ICL232CPE hsmp-3890
Text: IRF 820 IRF630 1.33 INT 824 IRF9Z34N 0.76 IRF 815 HSMS-2814-BLK 0.71 AGT 791 IR2104 2.13 IRF 820 IRF630N 0.73 IRF — IRF9Z34NS 1.04 IRF — HSMS-2815-BLK 0.73 AGT 791 IR2104S 2.58 IRF 820 IRF630NS 1.07 IRF


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PDF HIP4080AIP ICM7243BIPL IRF3515S IRF840 HIP4081AIP ICM7555CN IRF3710 HIP4082IP ICM7555IBA irf 425 ICL8038CCPD HSMS-2820-BLK HSDL-1001-001 icl8038ccjd IRF 315 HSMP 2820 ICM7211AMIPL ICL232CPE hsmp-3890
1997 - IRF9Z34NL

Abstract: IRF9Z34NS marking F53
Text: PD - 9.1525 IRF9Z34NS /L HEXFET® Power MOSFET Advanced Process Technology Surface Mount ( IRF9Z34NS ) l Low-profile through-hole ( IRF9Z34NL ) l 175°C Operating Temperature l Fast Switching l , up to 2.0W in a typical surface mount application. The through-hole version ( IRF9Z34NL ) is available , IRF9Z34NS /L Electrical Characteristics @ TJ = 25°C (unless otherwise specified) RDS(on) VGS(th) gfs , TJ = 25°C, L = 3.6mH Uses IRF9Z34N data and test conditions RG = 25, I AS = -10A. (See Figure


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PDF IRF9Z34NS/L IRF9Z34NS) IRF9Z34NL) IRF9Z34NL IRF9Z34NS marking F53
1997 - marking F53

Abstract: IRF9Z34NL IRF9Z34NS
Text: PD - 9.1525 IRF9Z34NS /L HEXFET® Power MOSFET Advanced Process Technology Surface Mount ( IRF9Z34NS ) l Low-profile through-hole ( IRF9Z34NL ) l 175°C Operating Temperature l Fast Switching l , up to 2.0W in a typical surface mount application. The through-hole version ( IRF9Z34NL ) is available , IRF9Z34NS /L Electrical Characteristics @ TJ = 25°C (unless otherwise specified) RDS(on) VGS(th) gfs , TJ = 25°C, L = 3.6mH Uses IRF9Z34N data and test conditions RG = 25, I AS = -10A. (See Figure


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PDF IRF9Z34NS/L IRF9Z34NS) IRF9Z34NL) marking F53 IRF9Z34NL IRF9Z34NS
Not Available

Abstract: No abstract text available
Text: PD - 9.1525 IRF9Z34NS /L HEXFET® Power MOSFET Advanced Process Technology Surface Mount ( IRF9Z34NS ) l Low-profile through-hole ( IRF9Z34NL ) l 175°C Operating Temperature l Fast Switching l , up to 2.0W in a typical surface mount application. The through-hole version ( IRF9Z34NL ) is available , ––– ––– 2.2 40 °C/W 8/25/97 IRF9Z34NS /L Electrical Characteristics @ TJ = 25 , %. max. junction temperature. ( See fig. 11 ) ‚ Starting TJ = 25°C, L = 3.6mH … Uses IRF9Z34N


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PDF IRF9Z34NS/L IRF9Z34NS) IRF9Z34NL) capabl245,
1997 - 1530A

Abstract: IRF9Z34N IRF high current p-channel irf 9246 IRFI9Z34N I840G MOSFET IRF 630 F1010E
Text: ) ISD -10A, di/dt -290A/µs, VDD V(BR)DSS, TJ 175°C Uses IRF9Z34N data and test conditions


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PDF IRFI9Z34N O-220 1530A IRF9Z34N IRF high current p-channel irf 9246 IRFI9Z34N I840G MOSFET IRF 630 F1010E
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