The Datasheet Archive

Top Results (5)

Part Manufacturer Description Datasheet Download Buy Part
IRF9610PBF Vishay Siliconix Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN
IRF9610SPBF Vishay Siliconix Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3
IRF9610STRR Vishay Siliconix MOSFET P-CH 200V 1.8A D2PAK
IRF9610L Vishay Siliconix MOSFET P-CH 200V 1.8A TO-262
IRF9610STRL Vishay Siliconix MOSFET P-CH 200V 1.8A D2PAK

Search Stock (22)

  You can filter table by choosing multiple options from dropdownShowing 22 results of 22
Part Manufacturer Supplier Stock Best Price Price Each Buy Part
IRF9610 International Rectifier Bristol Electronics - -
IRF9610 International Rectifier Bristol Electronics - -
IRF9610 Samsung Semiconductor Bristol Electronics - -
IRF9610PBF Vishay Intertechnologies Newark element14 99 $1.85 $0.80
IRF9610PBF Vishay Intertechnologies element14 Asia-Pacific 1,694 $2.06 $0.83
IRF9610PBF Vishay Siliconix Allied Electronics & Automation 0 $1.77 $1.42
IRF9610PBF Vishay Intertechnologies Allied Electronics & Automation 0 $1.26 $1.26
IRF9610PBF Vishay Intertechnologies Chip1Stop 700 $0.97 $0.78
IRF9610PBF Vishay Intertechnologies Future Electronics 1,402 $0.65 $0.61
IRF9610PBF Vishay Intertechnologies Avnet - -
IRF9610PBF Vishay Intertechnologies Farnell element14 1,904 £0.44 £0.40
IRF9610PBF Vishay Intertechnologies Avnet 0 $1.85 $0.86
IRF9610PBF Vishay Intertechnologies RS Components 1,119 £0.60 £0.52
IRF9610PBF Vishay Intertechnologies RS Components 466 £1.30 £0.52
IRF9610PBF Vishay Intertechnologies TME Electronic Components 349 $0.57 $0.34
IRF9610PBF Vishay Intertechnologies Schukat electronic 925 €0.40 €0.27
IRF9610PBF Vishay Siliconix New Advantage Corporation 1,122 $1.29 $0.99
IRF9610SPBF Vishay Siliconix ComS.I.T. - -
IRF9610SPBF Vishay Intertechnologies Chip1Stop 1,000 $0.62 $0.62
IRF9610SPBF Vishay Intertechnologies Future Electronics 0 $1.31 $0.79
IRF9610SPBF Vishay Dale Allied Electronics & Automation 0 $1.63 $1.06
IRF9610SPBF Vishay Intertechnologies Avnet - -

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IRF9610 datasheet (29)

Part Manufacturer Description Type PDF
IRF9610 Toshiba Power MOSFETs Cross Reference Guide Original PDF
IRF9610 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 200V 1.8A TO-220AB Original PDF
IRF9610 International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, P-Channel, Power, -200V, -1.8A, Pkg Style TO-220AB Scan PDF
IRF9610 International Rectifier TO-220 Plastic Package HEXFETs Scan PDF
IRF9610 International Rectifier Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.8A) Scan PDF
IRF9610 International Rectifier TO-220 / TO-247 HEXFET Power MOSFETs Scan PDF
IRF9610 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
IRF9610 Others Shortform Datasheet & Cross References Data Scan PDF
IRF9610 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
IRF9610 Others Semiconductor Master Cross Reference Guide Scan PDF
IRF9610 Others FET Data Book Scan PDF
IRF9610 Samsung Electronics N-Channel Power MOSFET Scan PDF
IRF9610L Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 200V 1.8A TO-262 Original PDF
IRF9610L Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
IRF9610PBF International Rectifier HEXFET POWER MOSFET ( VDSS=-200V , RDS(on)=3.0 Ohm , ID=-1.8A ) Original PDF
IRF9610PBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 200V 1.8A TO-220AB Original PDF
IRF9610S Toshiba Power MOSFETs Cross Reference Guide Original PDF
IRF9610S Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 200V 1.8A D2PAK Original PDF
IRF9610S International Rectifier HEXFET Power Mosfet Scan PDF
IRF9610S Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF

IRF9610 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2008 - IRF9610

Abstract:
Text: ORDERING INFORMATION Package TO-220 IRF9610PbF SiHF9610-E3 IRF9610 SiHF9610 Lead (Pb)-free SnPb , IRF9610 , SiHF9610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) · , S-Pending-Rev. A, 20-Jun-08 WORK-IN-PROGRESS www.vishay.com 1 IRF9610 , SiHF9610 Vishay Siliconix , S-Pending-Rev. A, 20-Jun-08 IRF9610 , SiHF9610 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless , S-Pending-Rev. A, 20-Jun-08 www.vishay.com 3 IRF9610 , SiHF9610 Vishay Siliconix Fig. 6 - Typical


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PDF IRF9610, SiHF9610 O-220 O-220 18-Jul-08 IRF9610 DATASHEET irf9610 IRF9610PBF MOSFET SiHF9610-E3
irf9610 samsung

Abstract:
Text: MOSFETS IRF9610 /9611 /9612/9613 FEATURES • • • • • • • Lower Rds (ON , Number Vos RoS«m) ■d IRF9610 -2 0 0 V 3.o n -1 .7 5 A IRF9611 -1 5 0 V , .5 A MAXIMUM RATINGS Symbol IRF9610 IRF9611 IRF9612 IRF9613 Unit Drain-Source , Max Units Test Conditions VgS(B ) i Igss Drain-Source Breakdown Voltage IRF9610 /9612 -200 - IRF9611/9613 BVdss 4b7 P-CHANNEL POWER MOSFETS IRF9610 /9611 /9612/9613


OCR Scan
PDF b4142 0Q122bb IRF9610/9611 IRF9610 IRF9611 IRF9612 IRF9613 irf9610 samsung
IRF9610

Abstract:
Text:  IRF9610 /9611 P-CHANNEL POWER MOSFETS FEATURES • Lower Rdsioni • Improved inductive , Number Vds RDS IRF9610 -200V 3.0 n -1.75A IRF9611 -150V 3.0 £1 -1.75A ABSOLUTE MAXIMUM RATINGS Characteristic Symbol IRF9610 IRF9611 Unit Drain-Source Voltage (1) Vdss -200 -150 Vdc Drain-Gate Voltage (Rgs , IRF9610 /9611 P-CHANNEL POWER MOSFETS ELECTRICAL CHARACTERISTICS (Tc=25'C unless otherwise specified) Symbol Characteristic Min Typ Max Units TBst Conditions BVdss Drain-Source Breakdown Voltage IRF9610


OCR Scan
PDF IRF9610/9611 IRF9610 -200V IRF9611 -150V
IRF9610

Abstract:
Text: Case-to-Sink Junction-to-Ambient MAX TYP MAX IRF9610-3 6 .4 1.0 80 Unit K/W K/W K/W Mounting surface flat , IRF9610 /9611/9612/9613 FEATURES · · · · · · · Lower Rds IRF9610 IR , Id Id Id m Ig m IRF9610 -2 0 0 -2 0 0 IRF9611 -1 5 0 -1 5 0 ±20 IRF9612 -2 0 0 -2 0 0 , 202 IRF9610 /9611/9612/9613 ELECTRICAL CHARACTERISTICS Symbol Characteristic Drain-Source


OCR Scan
PDF IRF9610/9611/9612/9613 IRF9610 IRF9612 IRF9613 IR 9613 IRF961 9611 F9610 IR mosfets
2009 - IRF9610

Abstract:
Text: ORDERING INFORMATION Package TO-220 IRF9610PbF SiHF9610-E3 IRF9610 SiHF9610 Lead (Pb)-free SnPb , IRF9610 , SiHF9610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) · , -0046-Rev. A, 19-Jan-09 www.vishay.com 1 IRF9610 , SiHF9610 Vishay Siliconix THERMAL RESISTANCE , %. www.vishay.com 2 Document Number: 91080 S09-0046-Rev. A, 19-Jan-09 IRF9610 , SiHF9610 , IRF9610 , SiHF9610 2.0 gfs,Transconductance (S) 80 µs Pulse Test VDS > ID(on) x RDS(on) max. 1.6


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PDF IRF9610, SiHF9610 O-220 O-220 18-Jul-08 IRF9610 SiHF9610-E3
IRF9610

Abstract:
Text: ORDERING INFORMATION Package TO-220 IRF9610PbF SiHF9610-E3 IRF9610 SiHF9610 Lead (Pb)-free SnPb , IRF9610 , SiHF9610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) · , -0046-Rev. A, 19-Jan-09 www.vishay.com 1 IRF9610 , SiHF9610 Vishay Siliconix THERMAL RESISTANCE , %. www.vishay.com 2 Document Number: 91080 S09-0046-Rev. A, 19-Jan-09 IRF9610 , SiHF9610 , IRF9610 , SiHF9610 2.0 gfs,Transconductance (S) 80 µs Pulse Test VDS > ID(on) x RDS(on) max. 1.6


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PDF IRF9610, SiHF9610 O-220 O-220 11-Mar-11 IRF9610 SiHF9610-E3
SM 9613

Abstract:
Text: IRF9610 /9611/9612/9613 FEATURES · · · · · · · Lower Rds IRF9610 -2 0 0 -2 0 0 , IRF9610 /9611/9612/9613 ELECTRICAL C H A RA CTERIST IC S Symbol Characteristic Drain-Source Breakdown , IRF9610 /9611/9612/9613 P-CHANNEL POWER MOSFETS SOURCE-DRAIN DIODE RATINGS AND CH A RA CTERISTICS , um Safe Operating Area 233 ELECTRONICS IRF9610 /9611/9612/9613 P-CHANNEL POWER MOSFETS


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PDF IRF9610/9611/9612/9613 IRF961 -150V SM 9613 9611 IR 9613 IRF9612
IRF9610

Abstract:
Text: Junction-to-Ambient — — 62 347 IRF9610_ Electrical Characteristics @ Tj = 25°C (unless otherwise specified , International î^r] Rectifier PD-9.350F IRF9610 HEXFET® Power MOSFET • Dynamic dv/dt , width < 300 us; duty cycle <2%. 348 I©R IRF9610 •10VII-8 V -9V0 / -7V l|i , 349 IRF9610 IOR I -80(ij PU 1 1 1 m) ma ¡6°C 1 Tj = , Vs. Gate-to-Source Voltage 350 I«R IRF9610 »DSIon 2.0 fis EFFEC - MEASl URATIC OF 2.0 REO «VI


OCR Scan
PDF IRF9610 -200V O-220 T0-220 acce40 075BVDSS IRF9610 irf9610 144 irf9610 IR
2011 - Not Available

Abstract:
Text: IRF9610 , SiHF9610 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , D D P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220 IRF9610PbF SiHF9610-E3 IRF9610 SiHF9610 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER , -0046-Rev. A, 19-Jan-09 www.vishay.com 1 IRF9610 , SiHF9610 Vishay Siliconix THERMAL RESISTANCE RATINGS , www.vishay.com 2 Document Number: 91080 S09-0046-Rev. A, 19-Jan-09 IRF9610 , SiHF9610 Vishay Siliconix


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PDF IRF9610, SiHF9610 O-220 11-Mar-11
2008 - irf9610

Abstract:
Text: IRF9610 , SiHF9610 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , D D P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220 IRF9610PbF SiHF9610-E3 IRF9610 SiHF9610 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER , S-Pending-Rev. A, 20-Jun-08 www.vishay.com 1 WORK-IN-PROGRESS IRF9610 , SiHF9610 Vishay Siliconix , ; duty cycle 2 %. www.vishay.com 2 Document Number: 91080 S-Pending-Rev. A, 20-Jun-08 IRF9610


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PDF IRF9610, SiHF9610 O-220 12-Mar-07 irf9610 irf9610pbf
2012 - IRF9610

Abstract:
Text: IRF9610 , SiHF9610 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , D D P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220 IRF9610PbF SiHF9610-E3 IRF9610 SiHF9610 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER , -0046-Rev. A, 19-Jan-09 www.vishay.com 1 IRF9610 , SiHF9610 Vishay Siliconix THERMAL RESISTANCE RATINGS , www.vishay.com 2 Document Number: 91080 S09-0046-Rev. A, 19-Jan-09 IRF9610 , SiHF9610 Vishay Siliconix


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PDF IRF9610, SiHF9610 O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRF9610
Not Available

Abstract:
Text: P-Channel MOSFET ORDERING INFORMATION Package TO-220 IRF9610PbF SiHF9610-E3 IRF9610 SiHF9610 , IRF9610 , SiHF9610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) â , , exemptions may apply Document Number: 91080 S09-0046-Rev. A, 19-Jan-09 www.vishay.com 1 IRF9610 , www.vishay.com 2 Document Number: 91080 S09-0046-Rev. A, 19-Jan-09 IRF9610 , SiHF9610 Vishay Siliconix , . Pulse Duration Document Number: 91080 S09-0046-Rev. A, 19-Jan-09 www.vishay.com 3 IRF9610


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PDF IRF9610, SiHF9610 O-220 O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
2015 - Not Available

Abstract:
Text: P-Channel MOSFET ORDERING INFORMATION Package TO-220 IRF9610PbF SiHF9610-E3 IRF9610 SiHF9610 , IRF9610 , SiHF9610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) â , , exemptions may apply Document Number: 91080 S09-0046-Rev. A, 19-Jan-09 www.vishay.com 1 IRF9610 , www.vishay.com 2 Document Number: 91080 S09-0046-Rev. A, 19-Jan-09 IRF9610 , SiHF9610 Vishay Siliconix , . Pulse Duration Document Number: 91080 S09-0046-Rev. A, 19-Jan-09 www.vishay.com 3 IRF9610


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PDF IRF9610, SiHF9610 O-220 O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Not Available

Abstract:
Text: P-Channel MOSFET ORDERING INFORMATION Package TO-220 IRF9610PbF SiHF9610-E3 IRF9610 SiHF9610 , IRF9610 , SiHF9610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) â , , exemptions may apply Document Number: 91080 S09-0046-Rev. A, 19-Jan-09 www.vishay.com 1 IRF9610 , www.vishay.com 2 Document Number: 91080 S09-0046-Rev. A, 19-Jan-09 IRF9610 , SiHF9610 Vishay Siliconix , . Pulse Duration Document Number: 91080 S09-0046-Rev. A, 19-Jan-09 www.vishay.com 3 IRF9610


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PDF IRF9610, SiHF9610 O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
IRF740 "direct replacement"

Abstract:
Text: IRF9532 IRF9533 IRF9540 IRF9541 IRF9542 IRF9543 IRF9610 IRF9611 IRF9612 IRF9613 IRF9620 IRF9621 IRF9622 , IRF9522 IRF9523 IRF9530 IRF9531 IRF9532 IRF9533 IRF9540 IRF9541 IRF9542 IRF9543 IRF9610 IRF9611 IRF9612 , IRFP9142 SAMSUNG Direct Re placement IRFP9242 IRF9612 IRFP9241 IRFP9240 IRF9512 IRF9611 IRF9613 IRF9610 , IRF9612 IRF9612 IRF9612 IRF9612 IRF9523 IRF9523 IRF9513 IRF9513 IRF9522 IRF9522 IRF9621 IRF9610 IRF9610


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PDF IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRF610 IRF611 IRF740 "direct replacement" irf9640 REPLACEMENT GUIDE IRF9540 replacement IRF640 irf510 2Sk350 HITACHI rca9213a IRF9613 fu120 buz11 cross reference 2SK309
2014 - Not Available

Abstract:
Text: P-Channel MOSFET ORDERING INFORMATION Package TO-220 IRF9610PbF SiHF9610-E3 IRF9610 SiHF9610 , IRF9610 , SiHF9610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) â , , exemptions may apply Document Number: 91080 S09-0046-Rev. A, 19-Jan-09 www.vishay.com 1 IRF9610 , www.vishay.com 2 Document Number: 91080 S09-0046-Rev. A, 19-Jan-09 IRF9610 , SiHF9610 Vishay Siliconix , . Pulse Duration Document Number: 91080 S09-0046-Rev. A, 19-Jan-09 www.vishay.com 3 IRF9610


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PDF IRF9610, SiHF9610 O-220 O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Not Available

Abstract:
Text: 4Û55452 QOmabb fl?b ■INR International Rectifier IRF9610 bSE J > INTER-NATIONAL , 4Ô55M52 ODlHflbfl bM^ ■INR IOR INTERNATIONAL RECTIFIER IRF9610 bSE D V GS, GATE T O SO U , Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration ■IRF9610 4055452 , 1 2 3 -4 5 25 G IRF9610 bSE » 50 Tc . 75 tOO CASE TEM PERATURE , I N C U R R E N T (A M P E R t S ) ■IRF9610 MflSSMSS D01HÔ71 133 ■INR


OCR Scan
PDF IRF9610
IRF9612

Abstract:
Text: INTERNATIONAL RECTIFIER IOR HEXFET TRANSISTORS IRF9610 IRF9611 P-CHANNEL S O OVOLT DEVICES IRF9612 IRF9613 , temperature stability. The P-Channel IRF9610 device is an approximate electrical complement to the N-Channel , Millimeters and (Inches) C-349 h e o I 4 ass4 sa ao aab ai ? I IRF9610 , IRF9611, IRF9612, IRF9613 , -351 H E 0 MflSS4Sa 0 0061,03 0 I IRF9610 , IRF9611, IRF9612, IRF9613 Devices " INTERNATIONAL R E C T I F , Drain-to-Source Voltage Fig. 11 - T y p ic a l G ate Charge V s . Gate-to-Source Voltage HE 0 I IRF9610


OCR Scan
PDF IRF9610 IRF9611 IRF9612 IRF9613 T0-220AB IRF9610, IRF9611, IRF9612, IRF9613 T-39-19 IRF610 complementary DIODE C352 9350e C350H F9613
1rf9610

Abstract:
Text: International 111 Rectifier PD-9.350F IRF9610 HEXFET® Power MOSFET • Dynamic dv/dt Rating â , , Vdo IRF9610 -tov -gv M-av I -7 , , Junctlon-to-Case Vs. Puise Duration 349 IRF9610 I©R I I -Mi«PUISE TES ««DSI mima , €” Typical Gate Charge Vs. Gate-to-Source Voltage 350 I«R IRF9610 "OSjon 2.0 (JSC EFfEC - ) MEASL URATIC rOF , -9.918 IRF9610S HEXFET® Power MOSFET • Surface Mount • Available in Tape & Reel • Dynamic dv/dt Rating â


OCR Scan
PDF IRF9610 -200V O-220 1RF9610S 1rf9610 afra marking IRF9610S ScansUX102
2007 - Not Available

Abstract:
Text: -6.00 -17.00 0.60 0.20 IRF9610 IRF9640 -200 -200 -1.8 -11.00 G S 3.00 0.50


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PDF IRF9520 IRF9540 IRF9610 IRF9640 50/Tube IRF9Z20
IRFP040

Abstract:
Text: HEXFET Power MOSFETs Plastic Insertable Package TO-220 P-Channel Vq International S Rectifier Part Number s Drain Source Voltage (Volts) RDS(on) On-Siate Resistance (Ohms) I q Continuous Drain Current 25°C Case (Amps) 'D M Pu'*« Drain Current (Amps) P q Max Power Dissipation (Watts) Case Outline Number (2) Notes Case Style IRF9512 IRF9510 IRF9522 IRF9520 IRF9532 IRF9530 IRF9542 IRF9540 IRF9613 IRF9611 IRF9623 IRF9621 IRF9633 IRF9631 IRF9643 IRF9641 IRF9612 IRF9610 IRF9622


OCR Scan
PDF O-220 IRF9512 IRF9510 IRF9522 IRF9520 IRF9532 IRF9530 IRF9542 IRF9540 IRF9613 IRFP040 IRFP141 IRFP142 IRFP143 IRF9620 IRF9632 IRF9643 irfp245
IFRZ44

Abstract:
Text: IRF9530 IRF9531 IRF9532 IRF9533 IRF9540 IRF9541 IRF9542 IRF9543 IRF9610 IRF9611 IRF9612 IRF9613 IRF9630 , FET, 100V, 0.2R, 19A, 125W, P-CH, T0-220 USE IRF9540 USE IRF9540 USE IRF9540 IRF9610 IRF9611 IRF9612 IRF9613 FET, 200V , 3.OR, 1.75A, 20W, P-CH, T0-220 USE IRF9610 USE IRF9610 USE IRF9610


OCR Scan
PDF 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IFRZ44 IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT Transistor mc7812ct KA336Z IRFZ44 PNP high voltage pnp transistor 700v KS82C670N
IRF9210

Abstract:
Text: IRF9610 IRF9611 (Continued) DESCRIPTION FET, 250V, 0.28R, 14A, 125W, N-CH, TO-220 USE IRF644 FET , FET, 200V, 3.OR, 1.75A, 20W, P-CH, TO-220 USE IRF9610 PAGE 162 162 167 167 167 167 172 172 172 172 , IRFR9015 (Continued) DESCRIPTION USE IRF9610 USE IRF9610 FET, 200V, 3.OR, 1.5 Q , 3A, 30W, P-CH, TO


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PDF 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 IRF9210 darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F KSH117-1 NPN Transistor 600V 5A TO-220 transistor irf620
IRF9511

Abstract:
Text: IRF9631 IRF9643 IRF9641 IRF9612 IRF9610 IRF9622 IRF9620 IRF9632 IRF9630 IRF9642 IRF9640 Remark FUNCTION


OCR Scan
PDF O-220 IRF9Z12 IRF9Z10 IRF9Z22 IRF9Z20 IRF9Z32 IRF9Z30 IRF9513 IRF9511 IRF9Z15 IRF9613 IRF9631 IRF9632 IRF9641 IRF9642 IRF9643
Irf640 irf9540

Abstract:
Text: IRF644 IRF710 IRF720 IRF730 IRF740 IRF820 IRF830 IRF840 IRF9510 IRF9520 IRF9530 IRF9540 IRF9610 IRF9620


OCR Scan
PDF 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 Irf640 irf9540 IRFR220TF IRF510 mosfet irf640 2n3904 2n3906 STR 456 IRFR9120-TF 451 MOSFET KSP44 IRF830 IRFR120TF
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