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IRF8313PBF Infineon Technologies AG Power Field-Effect Transistor, 9.7A I(D), 30V, 0.0155ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8
IRF8313TRPBF Infineon Technologies AG Power Field-Effect Transistor, 9.7A I(D), 30V, 0.0155ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8
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IRF831 Harris Semiconductor Rochester Electronics 1,610 $1.63 $1.32
IRF8313PBF Infineon Technologies AG Avnet 4,924 - -
IRF8313PBF Infineon Technologies AG Rochester Electronics 1,995 $0.33 $0.27
IRF8313PBF International Rectifier Rochester Electronics 5,182 $0.33 $0.27
IRF8313PBF Infineon Technologies AG Chip1Stop 457 $0.64 $0.46
IRF8313PBF Infineon Technologies AG Chip1Stop 670 $0.24 $0.22
IRF8313PBF.. Infineon Technologies AG Newark element14 735 $0.74 $0.26
IRF8313TRPBF Infineon Technologies AG Avnet - $0.41 $0.34
IRF8313TRPBF Infineon Technologies AG New Advantage Corporation 8,000 $0.31 $0.28
IRF8313TRPBF Infineon Technologies AG Newark element14 3,235 $0.71 $0.32
IRF8313TRPBF Infineon Technologies AG Avnet - $0.19 $0.16
IRF8313TRPBF Infineon Technologies AG Schukat electronic 2,900 €0.25 €0.18
IRF8313TRPBF Infineon Technologies AG Allied Electronics & Automation - $0.68 $0.68
IRF8313TRPBF Infineon Technologies AG Future Electronics 4,000 $0.20 $0.20
IRF8313TRPBF Infineon Technologies AG Chip1Stop 8,004 $0.69 $0.21
IRF8313TRPBF Infineon Technologies AG Chip1Stop 12,000 $0.31 $0.31
IRF8313TRPBF Infineon Technologies AG element14 Asia-Pacific 3,195 $0.82 $0.27
IRF8313TRPBF Infineon Technologies AG element14 Asia-Pacific 3,195 $0.82 $0.27
IRF8313TRPBF Infineon Technologies AG Farnell element14 3,350 £0.41 £0.24
IRF8313TRPBF Infineon Technologies AG RS Components 3,140 £0.26 £0.17

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IRF831 datasheet (38)

Part Manufacturer Description Type PDF
IRF831 Toshiba Power MOSFETs Cross Reference Guide Original PDF
IRF831 Fairchild Semiconductor N-Channel Power MOSFETs, 4.5 A, 450V/500V Scan PDF
IRF831 FCI POWER MOSFETs Scan PDF
IRF831 Frederick Components Power MOSFET Selection Guide Scan PDF
IRF831 General Electric Power Transistor Data Book 1985 Scan PDF
IRF831 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.5A. Scan PDF
IRF831 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
IRF831 International Rectifier N-Channel Power MOSFETs Scan PDF
IRF831 International Rectifier TO-220 HEXFET Power MOSFET Scan PDF
IRF831 Motorola Switchmode Datasheet Scan PDF
IRF831 Motorola European Master Selection Guide 1986 Scan PDF
IRF831 Motorola TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39 Scan PDF
IRF831 Others Shortform Transistor PDF Datasheet Scan PDF
IRF831 Others Shortform Datasheet & Cross References Data Scan PDF
IRF831 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
IRF831 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
IRF831 Others Semiconductor Master Cross Reference Guide Scan PDF
IRF831 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
IRF831 Others FET Data Book Scan PDF
IRF831 National Semiconductor N-Channel Power MOSFETs Scan PDF

IRF831 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1994 - IRF830

Abstract: IRF831 IRF830FI IRF831FI
Text: IRF830/FI IRF831 /FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS V DSS R DS( on) ID IRF830 IRF830FI TYPE 500 V 500 V < 1.5 < 1.5 4.5 A 3A IRF831 IRF831FI 450 V 450 , o C (·) Pulse width limited by safe operating area May 1993 1/10 IRF830/FI - IRF831 , IRF831 /831FI Min. Typ. Max. 500 450 Unit V V Zero Gate Voltage V DS = Max Rating , . 2.7 3.4 600 100 40 Max. Unit S 800 130 55 pF pF pF IRF830/FI - IRF831 /FI


Original
PDF IRF830/FI IRF831/FI IRF830 IRF830FI IRF831 IRF831FI 100oC O-220 ISOWATT220 830FI IRF830 IRF831 IRF830FI IRF831FI
irp833

Abstract: JRF830 IRF830 3203 MOSFET IRF833 IRF832 RF832 IRF831 mosfet jrf830 IAF830
Text: File Number 1582 Power MOS Field-Effect Transistors -Standard Power MOSFETs IRF830, IRF831 , – Majority carrier device go-; TERMINAL DIAGRAM The IRF830, IRF831 , IRF832 and IRF833 are n-channel , . (1.6mm) from ease for 10s) °c 3-199 Standard Power MOSFETs -—■—- IRF830, IRF831 , IRF832 , IRF831 IRP833 4 SO - _ V lD « 250|iA VQSlth) Gate Threshold Voltage ALL 2.0 - 4 0 V VDS * VGS' 'D  , <2> IRF830 IRF831 4.5 - - A VOS > 'Dion) x RDSIon) max.' VGS * 10V IRF832 IRF833 4.0 - - A RDS


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PDF IRF830, IRF831, IRF832, IRF833 50V-500V IRF832 IRF833 RF832 irp833 JRF830 IRF830 3203 MOSFET RF832 IRF831 mosfet jrf830 IAF830
Not Available

Abstract: No abstract text available
Text: IRF830, IRF831 , IRF832, IRF833 4.0A and 4.5A, 450V and 500V, 1.5 and 2.0 Ohm, N-Channel Power , BRAND IRF830 TO -220AB IRF830 IRF831 TO -220AB IRF831 IRF832 TO -220AB IRF832 , Number 1582.2 IRF830, IRF831 , IRF832, IRF833 Absolute Maximum Ratings T c = 25°c, Unless Otherwise Specified IRF830 IRF831 IRF832 IRF833 UNITS Drain to Source Voltage (Note 1 , AX UNITS IRF830, IRF832 500 . . V IRF831 , IRF833 450 - - V 2.0


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PDF IRF830, IRF831, IRF832, IRF833
1998 - IRF830

Abstract: IRF8331 IRF831 IRF832 IRF833 harris IRF833 TA17415 TB334
Text: IRF830, IRF831 , IRF832, IRF833 S E M I C O N D U C T O R 4.0A and 4.5A, 450V and 500V, 1.5 , PACKAGE D BRAND IRF830 TO-220AB IRF831 TO-220AB IRF831 IRF832 TO , . Copyright © Harris Corporation 1998 5-1 File Number 1582.2 IRF830, IRF831 , IRF832, IRF833 , 334 . . . . . . . . . . . .Tpkg IRF831 IRF832 IRF833 UNITS 500 500 4.5 3.0 18 ±20 , IRF830, IRF832 500 - - V IRF831 , IRF833 450 - - V 2.0 - 4.0 V


Original
PDF IRF830, IRF831, IRF832, IRF833 IRF830 IRF8331 IRF831 IRF832 IRF833 harris IRF833 TA17415 TB334
2004 - Not Available

Abstract: No abstract text available
Text: 11/29/12 IRF831 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Diode Array , ; N-Ch; Enhancement IRF831 Availability Buy IR F831 at our online store ! Language Translator , can supply your de m and for discontinue d passive and active com pone nts! IRF831 Information Products Se arch for Parts R e que st a Q uote Ne w Products Parts W atch Te st House s IRF831 , /?ss_pn=IRF831 1/2 11/29/12 IRF831 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Diode


Original
PDF IRF831 O-220A STV3208 LM3909N LM3909 1N4510 500ns) 2N1711 IRF831
C312 diode

Abstract: diode C309 diode C315 9311J AN975 power MOSFET IRF830 IRF831 IRF833 IRF830 IF83
Text: Data Sheet No. PD-9.311J INTERNATIONAL RECTIFIER I^R REPETITIVE AVALANCHE AND dv/dt RATED1 IRF831 , energy pulse circuits. Product Summary Part Number bvdss RDS(on) id IRF830 500V 1.5ß 4.5A IRF831 450V , , ie. 2A3B C-309 IRF830, IRF831 , IRF832, IRF833 Devices Absolute Maximum Ratings Parameter IRF830, IRF831 IRF832, IRF833 Units ID @ TC = 25°C Continuous Drain Current 4.5 4.0 A ID @ TC = 100 , \foltage IRF830 IRF832 500 - - V VQS = 0V, lD = 250 & IRF831 IRF833 450 ^DS(on) Static


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PDF IRF831 O-220AB C-315 IRF830, IRF831, IRF832, IRF833 C-316 C312 diode diode C309 diode C315 9311J AN975 power MOSFET IRF830 IRF830 IF83
IRF830

Abstract: IRF830.831 reliability irf830 diode on 832 IRF830-3 power MOSFET IRF830
Text: PRODUCT SUMMARY Part Number IRF830 IRF831 IRF832 IRF833 Vds 500V 450V 500V 450V RoSIRF830 500 500 4.5 3.0 18 IRF831 450 450 ±20 4.5 3.0 18 ± 1 .5 280 , Drain-Source Breakdown Voltage IRF830/IRF832 IRF831 /IRF833 VgS (H i ) Gate Threshold Voltage Igss Igss Idss , Current (2) IRF830/ IRF831 IRF832/IRF833 Static Drain-Source On-State Resistance (2) IRF830/ IRF831 IRF832 , Source Current (Body Diode) IRF830/ IRF831 IRF832/IRF833 Ism Pulse Source Current(Body Diode)(3) IRF830


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PDF IRF830/831/832/833 O-220 IRF830 IRF831 IRF832 IRF833 IRF830.831 reliability irf830 diode on 832 IRF830-3 power MOSFET IRF830
IRF830

Abstract: IRFP430 rectifier 832 IRF833 IRF832 IRF831 IRF830.831 irfp4303 diode on 832 IRFP431
Text: IRF830/IRFP430 500V 1,5ft 4.5A IRF831 /IRFP431 450V 1,5n 4.5A IRF832/IRFP432 500V 2.on 4.OA IRF833/IRFP433 450V 2.on 4.OA MAXIMUM RATINGS Characteristics Symbol IRF830 IRFP430 IRF831 IRFP431 IRF832 , /IRFP432 500 - - V VGS = 0V Id=250HA IRF831 /IRFP431 IRF833/IRFP433 450 - - V VGS(th) Gate Threshold , Drain-Source Current (2) IRF830/IRFP430 4.5 IRF831 /IRFP431 - - Vds»9V, VGS=10V IRF832/IRFP432 i IRF833/IRFP433 - - A RDS(on) Static Drain-Source On-State Resistance (2) IRF830/IRFP430 IRF831 /IRFP431 - 0.95


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PDF IRF830/831/832/833 IRFP430/431Z432/433 b414e IRF830/IRFP430 IRF831 /IRFP431 IRF832/IRFP432 IRF833/IRFP433 IRF830 IRFP430 rectifier 832 IRF833 IRF832 IRF830.831 irfp4303 diode on 832 IRFP431
Not Available

Abstract: No abstract text available
Text: * IRF830 IRF831 IRF832 IRF833 HEXFET TRANSISTORS Q r X) N -C H A N N E L 500 Volt, 1.5 Ohm , bvqss F*DS(on) 'd IRF830 500V 1.511 4.5A IRF831 450V 1.5Î2 4.5A IRF832 , □ IRF830, IRF831 , IRF832, IRF833 Devices INTERNATIONAL R E C T IFIE R A b s o lu te M a x im u m R a tin g s ' Barametef T - 3 9 - H IRF832, IRF833 IRF830, IRF831 Units , ) ■□(on) On-State Drain Current ® Min. 500 450 IRF830 IRF831 - 1.4 1.5 -


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PDF T-39-11 IRF830 IRF831 IRF832 IRF833 O-220AB C-315 IRF830, IRF831, IRF832,
1rf830

Abstract: VN64GA IRF150 IRF142 IRF140 IRF132 IRF130 IRF122 IRF120 VN1001A
Text: 450 0.85 8.0 125 IRF841 450 1.10 7.0 125 IRF843 450 1.5 4.5 75 VN4501D 450 1.5 4.5 75 IRF831 , 1.4 20 VN2406D Siliconix 1-29 IRF430 - IRF431 - IRF432 - IRF433 IRF830 ■IRF831 ■IRF832 â , IRF831 450V TO-220AB IRF832 500V 2.012 4A IRF833 450V .jj ABSOLUTE MAXIMUM RATINGS (Tc = 25 , BVdss Drain-Source Breakdown IRF430, 2 IRF830, 2 500 V Vos = 0. ID = 250fiA IRF431, 3 IRF831 , 3 450 , (Note 1) IRF431, 3 IRF831 , 3 4.0 Static Drain-Source On-State rDS(on) Resistance IRF430, 1 IRF830


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PDF IRF150 IRF152 IRF140 IRF142 VN1000A IRF130 VN1001A IRF132 IRF120 IRF122 1rf830 VN64GA IRF150 IRF142 IRF140 IRF132 IRF130 IRF122 IRF120 VN1001A
1rf830

Abstract: 5002A VN64GA IRF820 IRF740 IRF450 IRF440 IRF350 VN67 IRF432
Text: 125 IRF841 450 1.10 7.0 125 IRF843 450 1.5 4.5 75 VN4501D 450 1.5 4.5 75 IRF831 450 2.0 4.0 75 , Siliconix 1-29 IRF430 - IRF431 - IRF432 - IRF433 IRF830 ■IRF831 ■IRF832 ■IRF833 Siliconix 500V , 450V TO-3 IRF432 500V 2.0B 4A IRF433 450V 1RF830 500V 1.5Ü 4.5A IRF831 450V TO , = 250fiA IRF431, 3 IRF831 , 3 450 ^GS(th) Gate Threshold Voltage All 2 4 VDS=VGS. ID=1 mA , Current IRF430, 1 IRF830, 1 4.5 A VDS = 25V, VGS = 10V (Note 1) IRF431, 3 IRF831 , 3 4.0 Static


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PDF to-220 to-39 to-237 to-92 to-202 IRF450 IRF840 IRF440 VN5001D/IRF830 VNP002A* 1rf830 5002A VN64GA IRF820 IRF740 IRF350 VN67 IRF432
IRF833

Abstract: IRF832 1RF831 30010 IRF830 IRF831 w sa 45a diode
Text: -39- IRF830, IRF831 , IRF832, IRF833 Power MOS Field-Effect Transistors File Number 1582 N-Channel , ■High input impedance ■Majority carrier device The IRF830, IRF831 , IRF832 and IRF833 are , , IRF831 , IRF832, IRF833 Electrical Characteristics @Tc = 25°C (Unless Otherwise Specified) Pararrwe , ) On-State Orain Currant © IRF830 IRF831 4.6 - - A V0S > 'Dlonl " ROSIonl max.' VGS " ,ov IRF832 IRF833 4.0 - - A fiDSlon) Static Orain-Source On-Stata Resistance ® IRF830 IRF831 - 1.3 1.5 0 V0S " 10V


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PDF lfl37c! T-39- IRF830, IRF831, IRF832, IRF833 50V-500V IRF832 IRF833 1RF831 30010 IRF830 IRF831 w sa 45a diode
.2TY

Abstract: IRF830Fi S235N
Text: SGS-THOMSON ilLIOT®«! IRF830/FI IRF831 /FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS , IRF830/FI - IRF831 /FI THERMAL DATA T O -2 2 0 Rthj-case Rthj-amb Rthc s Ti T h e rm a l R e s is ta n c , -m 0 M S 0 N 232 " 7# MiCSM SLiICtrH M IÎC * IRF830/FI - IRF831 /FI ELECTRICAL , IRF830/FI - IRF831 /FI Thermal Impedance for ISOWATT22Q Thermal Impedance for TO-220 1 0 "' 1CT5 , SCS-THOMSON IRF830/FI - IRF831 /FI T ransfer Characteristics T ransconductance Static Drain-source


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PDF IRF830/FI IRF831/FI .2TY IRF830Fi S235N
IRF830.831

Abstract: Irf830
Text: SUMMARY Part Number V ds RDSfon) Id IRF830 500V 1.5 0 4.5A IRF831 450V 1.5 0 4.5A ABSOLUTE MAXIMUM RATINGS Symbol IRF830 IRF831 Unit Drain-Source Voltage (1 , Drain-Source Breakdown Voltage BVdss VG S(tti) IRF830 500 IRF831 450 Gate Threshold Voltage


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PDF IRF830/831 IRF830 IRF831 IRF830.831 Irf830
IRF830

Abstract: IRF 450 MOSFET IRF831 LG diode 831 transistor irf830 TRANSISTOR mosfet IRF830
Text: u ty Cycle * 2%. (1) A d d 0.1 V fo r IRF830 and IRF831. Ld 3.5 (Typ.» 4 5 (Typ) - nH Ls , MOTOROLA TECHNICAL DATA SEMICONDUCTOR IRF830 IRF831 IRF832 IRF833 TMOS POWER FETs 4 and 4.5 , g ssf Symbol M in M ax Unit V(BR)DSS IRF831 , IRF833 IRF830, IRF832 dss - - 0.2 1 , Threshold Voltage iv d s VGS(th) r DS lonl IRF830, IRF831 IRF832, IRF833 'D(on) IRF830, IRF831 IRF832, IRF833 9FS IRF830, IRF831 IRF832, IRF833 2 4 Vdc Ohm = v g s - id = 0 2 5 m A > 10 Vdc- !0 =


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PDF IRF830 IRF831 IRF832 IRF833 IRF831. IRF 450 MOSFET LG diode 831 transistor irf830 TRANSISTOR mosfet IRF830
Not Available

Abstract: No abstract text available
Text: – HAS ÌRF830, IRF831. ¡RF832, IRF833 IRF830R, IRF831R , /RF832R, /RF833R Electrical , - - V 2.0 V D S = V GS> 'D = 250|iA _ 450 IRF831 /833, IRF831R /833R - , ôlfl ■HAS IRF830, IRF831 , /RF832, /RF833 IRF830R, IRF831R , IRF832R, IRF833R i D o r a in , • Linear Transfer Characteristics • High Input Impedance Description The IRF830, IRF831 , . IRF830R, IRF831R , IRF832R and IRF833R types are advanced power M O S FET s designed, tested, and


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PDF M3D5E71 00S40LÃ IRF830/Q31/832/833 IRF830R/831R/832R/833R IRF830, IRF831, IRF832, IRF833 IRF830R, IRF831R,
IRF830

Abstract: GC237 IRF830FI IRF 830 IRF831 IRF831FI
Text: 4.5 A 3 A IRF831 IRF831FI 450 V 450 V < 1.5 £2 < 1.5 £2 4.5 A 3 A ■TYPICAL RDS(on) = 1.35 Q â , 7^237 00HS7Db SÜD ■SGTH SCS-THOMSON IRF830FI ilLJ©™«! IRF831 /FI N - CHANNEL , )dss Drain-source Breakdown Voltage Id = 250 nA Ves = 0 for IRF830/830FI for IRF831 /831FI 500 450 V V , IRF830/FI - IRF831 /FI Thermal Impedance for TO-220 7^237 0D4S7Cn 21T ■SGTH Thermal Impedance for , 20 30 40 V (V) SGS-THOMSON r m TTETEB? 0D4571Q T31 ■SGTH IRF830/FI - IRF831 /FI Transfer


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PDF 00HS7Db IRF830FI IRF831/FI IRF830 IRF830FI IRF831 IRF831FI Gl4S71S IRF830/FI-IRF831/FI GC237 IRF 830
IRF740 "direct replacement"

Abstract: irf9640 REPLACEMENT GUIDE IRF9540 replacement IRF640 irf510 2Sk350 HITACHI rca9213a IRF9613 fu120 buz11 cross reference 2SK309
Text: IRF742 IRF743 IRF820 IRF821 IRF822 IRF823 IRF830 IRF831 IRF832 IRF833 IRF840 IRF841 SAMSUNG Direct , IRF731 IRF732 IRF733 IRF740 IRF741 IRF742 IRF743 IRF820 IRF821 IRF822 IRF823 IRF830 IRF831 IRF832 IRF833 , IRF720 IRF9631 IRF9631 IRF9520 IRF9520 CROSS REFERENCE GUIDE SAMSUNG Direct Re placement IRF831 , IRFP150 IRFP252 IRFP352 IRFP452 IRFP252 IRFP352 IRFP452 IRFP440 IRFP440 IRF822 IRF842 IRF830 IRF831 IRF832 , IRF730 IRF732 IRF831 IRF833 IRF830 IRF732 SSP6N60 SSP5N60 IRF9513 IRF9513 IRF9513 IRF9513 IRF9512 IRF9512


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PDF IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRF610 IRF611 IRF740 "direct replacement" irf9640 REPLACEMENT GUIDE IRF9540 replacement IRF640 irf510 2Sk350 HITACHI rca9213a IRF9613 fu120 buz11 cross reference 2SK309
IRF830 equivalent

Abstract: IRF9520 equivalent 10A ibf830 1rf830 IRF450 equivalent IRF9231 IRF9132 IRF9131 IRF9130 IRF9613
Text: IRF830 ■IRF831 ■IRF832 ■IRF833 Siliconix 500V N-Channel Enhancement Mode MOSPOWER These , IRF433 450V 1RF830 500V 1.5Ü 4.5A IRF831 450V TO-220AB IRF832 500V 2.012 4A IRF833 450V , = 250fiA IRF431, 3 IRF831 , 3 450 ^GS(th) Gate Threshold Voltage All 2 4 VDS=VGS. ID=1 mA , Current IRF430, 1 IRF830, 1 4.5 A VDS = 25V, VGS = 10V (Note 1) IRF431, 3 IRF831 , 3 4.0 Static , , VN5002A, VN5002D, IRF430, IRF431, IRF432.IRF433, IRF830, IRF831 , IRF832, IRF833 Temperature Effects on


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PDF IRF9130 IRF9130* IRF9131 IRF9131 IRF9132 IRF9132 IRF9133 IRF9133 IRF9230 IRF9231 IRF830 equivalent IRF9520 equivalent 10A ibf830 1rf830 IRF450 equivalent IRF9613
1rf830

Abstract: ibf830 IRF8301 VN5001A IRF452 IRF450 IRF442 IRF440 IRF432 IRF422
Text: IRF830 ■IRF831 ■IRF832 ■IRF833 Siliconix 500V N-Channel Enhancement Mode MOSPOWER These , IRF433 450V 1RF830 500V 1.5Ü 4.5A IRF831 450V TO-220AB IRF832 500V 2.012 4A IRF833 450V , = 250fiA IRF431, 3 IRF831 , 3 450 ^GS(th) Gate Threshold Voltage All 2 4 VDS=VGS. ID=1 mA , Current IRF430, 1 IRF830, 1 4.5 A VDS = 25V, VGS = 10V (Note 1) IRF431, 3 IRF831 , 3 4.0 Static , , VN5002A, VN5002D, IRF430, IRF431, IRF432.IRF433, IRF830, IRF831 , IRF832, IRF833 Temperature Effects on


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PDF IRF450 IRF452 IRF440 IRF442 VNP002A* VN5001A IRF430 VN5002A IRF432 IRF420 1rf830 ibf830 IRF8301 VN5001A IRF452 IRF450 IRF442 IRF440 IRF432 IRF422
1rf830

Abstract: IRF9612 IRF830 IRF9232 IRF9231 IRF9230 IRF9133 IRF9132 IRF9131 irf9620
Text: IRF830 ■IRF831 ■IRF832 ■IRF833 Siliconix 500V N-Channel Enhancement Mode MOSPOWER These , IRF433 450V 1RF830 500V 1.5Ü 4.5A IRF831 450V TO-220AB IRF832 500V 2.012 4A IRF833 450V , = 250fiA IRF431, 3 IRF831 , 3 450 ^GS(th) Gate Threshold Voltage All 2 4 VDS=VGS. ID=1 mA , Current IRF430, 1 IRF830, 1 4.5 A VDS = 25V, VGS = 10V (Note 1) IRF431, 3 IRF831 , 3 4.0 Static , , VN5002A, VN5002D, IRF430, IRF431, IRF432.IRF433, IRF830, IRF831 , IRF832, IRF833 Temperature Effects on


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PDF IRF9130 IRF9130* IRF9131 IRF9131 IRF9132 IRF9132 IRF9133 IRF9133 IRF9230 IRF9231 1rf830 IRF9612 IRF830 IRF9232 irf9620
IRF732P

Abstract: SGSP3055 IRF722P IRF730P IRF540FI SGSP381 irf522p SGSP312 IRF510 1rfp450
Text: IRF823 IRF823FI IRF823P IRF830 IRF830 IRF830P IRF831 IRF831FI IRF831P IRF832 IRF832FI IRF832P IRF833 S , IRF823FI IRF823FI IRF830 IRF830 IRF830FI IRF831 IRF831FI IRF831FI IRF832 IRF832FI IRF832FI IRF833 S G S , MTP3N60FI SGSP351 SGSP351 SGSP317 SGSP317 IRF733 IRF732 IRF831 IRF830 SGSP351 SGSP351 IRF620 IRF620 IRF620 , IRF141 SGSP351 SGSP351 SGSP317 SGSP317 IRF821 IRF820 SGSP358 IRF733 IRF732 IRF831 IRF830 IRF743 IRF742


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PDF 2SK295 2SK296 2SK308 2SK310 2SK311 2SK312 2SK313 2SK319 2SK320 2SK324 IRF732P SGSP3055 IRF722P IRF730P IRF540FI SGSP381 irf522p SGSP312 IRF510 1rfp450
TP8N10

Abstract: th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40
Text: IRF830P IRF831 IRF831FI IRF831P IRF832 IRF832FI IRF832P IRF833 SGS-THOMSON SGS-THOMSON NEAREST , IRF822FI IRF822FI IRF823 IRF823FI IRF823FI IRF830 IRF830 IRF830FI IRF831 IRF831FI IRF831FI IRF832 IRF832FI , SGSP317 SGSP317 IRF733 IRF732 IRF831 IRF830 SGSP351 SGSP351 IRF620 IRF620 IRF620 IRF620 IRF731 IRF730 , IRF142 IRF141 IRF141 SGSP351 SGSP351 SGSP317 SGSP317 IRF821 IRF820 SGSP358 IRF733 IRF732 IRF831 IRF830


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PDF 2SK295 2SK296 2SK308 2SK310 2SK311 2SK312 2SK313 2SK319 2SK320 2SK324 TP8N10 th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40
1rf830

Abstract: LG diode 831 IRF830.831 IRFS32 IRFS30
Text: Breakdown Voltage IRF830 IRF832 IRF831 IRF633 ALL ALL ALL ALL S O O 450 2.0 * . - V V Vq s -OV , On-State Resistance (5) On-State Drain Current (2) lD(on) IRF830 IRF831 IRF832 IRF833 IRF830 IRFB31


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PDF 1RF830 1RF831 IRF832 IRF833 IRFS30 IRF631 IRFS32 IRF833 LG diode 831 IRF830.831
pn junction DIODE 1N4001

Abstract: ibf830 VN64GA IRF140 IRF132 IRF130 IRF122 IRF120 2N6658 5002A
Text: 450 0.85 8.0 125 IRF841 450 1.10 7.0 125 IRF843 450 1.5 4.5 75 VN4501D 450 1.5 4.5 75 IRF831 , , IRF432.IRF433, IRF830, IRF831 , IRF832, IRF833 Temperature Effects on ros IRF831 , IRF832, IRF833 SAFE OPERATING AREA Active Region 10 1 0.5 curre depen upon nt i i ds ^ 1


OCR Scan
PDF IRF150 IRF152 IRF140 IRF142 VN1000A IRF130 VN1001A IRF132 IRF120 IRF122 pn junction DIODE 1N4001 ibf830 VN64GA IRF140 IRF132 IRF130 IRF122 IRF120 2N6658 5002A
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