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2006 - IRF6641TR1PBF

Abstract:
Text: IRF6641PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM , resistance by 80%. The IRF6641PbF is optimized for primary side sockets in forward and push-pull isolated


Original
PDF IRF6641TRPbF IRF6641PbF IRF6641TR1PBF IRF6641TRPBF
2007 - HEXFET SO-8

Abstract:
Text: IRF6641PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM , resistance by 80%. The IRF6641PbF is optimized for primary side sockets in forward and push-pull isolated


Original
PDF 7262A IRF6641TRPbF IRF6641PbF HEXFET SO-8 IRF6641TR1PBF IRF6641TRPBF
Not Available

Abstract:
Text: Description The IRF6641PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced , previous best thermal resistance by 80%. The IRF6641PbF is optimized for primary side sockets in forward


Original
PDF 7262A IRF6641TRPbF IRF6641PbF comb04
2006 - MARKING MZ

Abstract:
Text: IRF6641PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM , resistance by 80%. The IRF6641PbF is optimized for primary side sockets in forward and push-pull isolated


Original
PDF IRF6641TRPbF IRF6641PbF MARKING MZ IRF6641TR1PBF IRF6641TRPBF
2013 - Not Available

Abstract:
Text: such as efficiency, THD, and EMI. The IRF6641PbF device utilizes DirectFET® packaging technology , applications. Base part number Package Type IRF6641PbF DirectFET Medium Can Standard Pack Form


Original
PDF IRF6641TRPbF
2013 - Not Available

Abstract:
Text: key Class-D audio amplifier performance factors such as efficiency, THD, and EMI. The IRF6641PbF , audio amplifier applications. Base part number Package Type IRF6641PbF DirectFET Medium Can


Original
PDF IRF6641TRPbF
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