The Datasheet Archive

IRF6602 datasheet (5)

Part Manufacturer Description Type PDF
IRF6602 International Rectifier A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET ST Package Original PDF
IRF6602 International Rectifier SMD, HEXFET Power Amp., 20V 48A 42W, MOS-FET N-Channel enhanced Original PDF
IRF6602 International Rectifier Power MOSFET for Ideal for CPU core DC-DC converters, 20V, 11A Original PDF
IRF6602 International Rectifier HEXFET Power MOSFET Original PDF
IRF6602TR1 International Rectifier Original PDF

IRF6602 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2005 - MQ 132

Abstract: IRF6602 IRF6602TR1 mosfet 4800
Text: PD - 94363C IRF6602 / IRF6602TR1 HEXFET® Power MOSFET VDSS l Ideal for CPU Core DC-DC , IRF6602 / IRF6602TR1 Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS VDSS/TJ Min. Typ , www.irf.com IRF6602 / IRF6602TR1 1000 1000 VGS 10V 5.0V 4.5V 4.0V 3.5V 3.3V 3.0V BOTTOM , 160 ( ° C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF6602 / IRF6602TR1 VGS = , www.irf.com 5 IRF6602 / IRF6602TR1 15V 250 ID 3.9A 7.0A 8.8A TOP + V - DD IAS


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PDF 94363C IRF6602/IRF6602TR1 IRF6602 MQ 132 IRF6602TR1 mosfet 4800
2002 - IRF6602

Abstract: 88a marking
Text: PD - 94363A IRF6602 DirectFETTM Power MOSFET l Application Specific MOSFETs l Ideal for CPU , The IRF6602 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM , , IMPROVING previous best thermal resistance by 80%. The IRF6602 balances both low resistance and low charge , generation of processors operating at higher frequencies. The IRF6602 has been optimized for parameters that , 20 3.0 1.0 55 ­­­ ­­­ ­­­ ­­­ °C/W 1 04/24/02 IRF6602 Static @ TJ = 25°C (unless


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PDF 4363A IRF6602 IRF6602 88a marking
2004 - IRF6602

Abstract: IRF6602TR1
Text: PD-94363C IRF6602 / IRF6602TR1 HEXFET® Power MOSFET VDSS l Ideal for CPU Core DC-DC , www.irf.com IRF6602 / IRF6602TR1 1000 1000 VGS 10V 5.0V 4.5V 4.0V 3.5V 3.3V 3.0V BOTTOM , 160 ( ° C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF6602 / IRF6602TR1 VGS = , www.irf.com IRF6602 / IRF6602TR1 3.0 VGS(th) Gate threshold Voltage (V) 12 I D , Drain Current , Thermal Impedance, Junction-to-Case www.irf.com 5 IRF6602 / IRF6602TR1 15V 250 ID 3.9A


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PDF PD-94363C IRF6602/IRF6602TR1 IRF6602 IRF6602TR1
2003 - IRF6602

Abstract: power supply with mosfet dm 100
Text: PD - 94363B HEXFET® IRF6602 Power MOSFET VDSS l Ideal for CPU Core DC-DC Converters l , IRF6602 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM , , IMPROVING previous best thermal resistance by 80%. The IRF6602 balances both low resistance and low charge , generation of processors operating at higher frequencies. The IRF6602 has been optimized for parameters that , IRF6602 Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS


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PDF 94363B IRF6602 IRF6602 power supply with mosfet dm 100
2005 - Not Available

Abstract: No abstract text available
Text: PD - 94363C IRF6602 / IRF6602TR1 HEXFET® Power MOSFET VDSS l Application Specific MOSFETs l , 03/29/05 IRF6602 / IRF6602TR1 Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS , www.irf.com IRF6602 / IRF6602TR1 1000 ID, Drain-to-Source Current (A) 100 ID, Drain-to-Source , Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF6602 / IRF6602TR1 , 4 www.irf.com IRF6602 / IRF6602TR1 12 3.0 VGS(th) Gate threshold Voltage (V) 2.5


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PDF 94363C IRF6602/IRF6602TR1 IRF6602
2002 - Not Available

Abstract: No abstract text available
Text: PD - 94363 PROVISIONAL IRF6602 DirectFETTM Power MOSFET RDS(on) max 13m@VGS = 10V 18.5m@VGS = , IRF6602 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM , , IMPROVING previous best thermal resistance by 80%. The IRF6602 balances both low resistance and low charge , generation of processors operating at higher frequencies. The IRF6602 has been optimized for parameters that , 20 3.0 1.0 °C/W www.irf.com 1 01/15/02 IRF6602 Parameter Drain-to-Source Breakdown


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PDF IRF6602 IRF6602
tamura solder paste

Abstract: AN1035 SN62 PB36 ag2 kester DirectFet IRF6604 SN62 PB36 ag2 Copper Tamura kaken IRF6602 IRF6601 Multicore Solders
Text: data sheet. There are currently four devices in the DirectFET range: IRF6601, IRF6602 , IRF6603 and , . Figure 3 IRF6602 and IRF6604 pad layouts To optimize ease of board mounting and reliability in use , IRF6602 and IRF6604 substrate layouts DirectFET technology was developed for use with epoxy and , cause failure in IRF6601 and IRF6602 devices. 100% 90% 80% Survival Rate 1. 70% 60% 50 , longitudinal 0805 ceramic capacitor Figure 11 IRF6602 deflection test results Note: The shaded areas


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PDF AN-1035 065mm. pp1509-1523 tamura solder paste AN1035 SN62 PB36 ag2 kester DirectFet IRF6604 SN62 PB36 ag2 Copper Tamura kaken IRF6602 IRF6601 Multicore Solders
96Sn4Ag

Abstract: E161567 MOSFET TEST SIMPLE Procedures heat exchanger tektronix 576 curve tracer IRF6602 IRF6601 60068-2-21 100N FR4 substrate 1.6mm
Text: deflection against Survival Rate for the IRF6602 DirectFETTM MOSFET and 0805 Ceramic Capacitor Note: The , steps until the component failed. IRF6602 : Initially pressure was ramped up to 400N, following the , increased the drop height to 1500mm. Results IRF6601 IRF6602 Drop height (mm) 1000 1500


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IRFP460Z

Abstract: IRF3205 application IRF3205 equivalent power MOSFET IRFP460z irfp4004 IRF3808 equivalent IRLL014N IRF1405 equivalent irfz44v equivalent IRF3205
Text: IRF6601 IRF6601 IRF6602 IRF6602 IRF6602 IRF6602 IRF6602 IRF6604 IRF6607 IRF6607 IRF6607 Total , IRF6601 IRF6601 IRF6602 IRF6602 IRF6602 IRF6602 Total NA NA NA NA NA NA NA NA NA NA NA


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PDF O-220 IRFP460Z IRF3205 application IRF3205 equivalent power MOSFET IRFP460z irfp4004 IRF3808 equivalent IRLL014N IRF1405 equivalent irfz44v equivalent IRF3205
tektronix type 576 curve tracer

Abstract: heat exchanger 96Sn4Ag tektronix 576 curve tracer 100N IRF6601 IRF6602 cardwell FR4 substrate 1.6mm
Text: capacitor Chart. 2c Mortality curve showing the deflection against Survival Rate for the IRF6602 and , increased the drop height to 1500mm. Results IRF6601 IRF6602 Drop height (mm) 1000 1500


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AN1059

Abstract: Dow Corning LTD Electrical insulating compound IRF6618 IRF6608 IRF6607 IRF6604 IRF6603 IRF6602 IRF6601 PD-94574A
Text: IRF6601 IRF6602 IRF6603 IRF6604 IRF6607 IRF6608 IRF6618 R2 0.33 0.98 0.33 0.98 0.33 1.07


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PDF AN-1059 AN1059 Dow Corning LTD Electrical insulating compound IRF6618 IRF6608 IRF6607 IRF6604 IRF6603 IRF6602 IRF6601 PD-94574A
2006 - MLP-4x4-24

Abstract: FBR1 4x4-24 SC473MLTR marking date code Sanyo CAPACITORS v5r marking si4410b SC473MLTRT
Text: / NEC-TOKIN SPCAP Series or Part Number IRF7821, IRF6602 , SSC3002S, Si4860DY,Si4410BDY High Side MOSFET


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PDF SC473 SC473 MLP-32 4x4-24 MLP-4x4-24 FBR1 4x4-24 SC473MLTR marking date code Sanyo CAPACITORS v5r marking si4410b SC473MLTRT
2006 - 200v 30A schottky

Abstract: MBRS140L MBR0530 33UH 330UF 22NF 10UF 10NF 100PF MLP-4x4-24
Text: International Rectifier Fairchild Semiconductor Siliconix Infenion Technologies IRF7821, IRF6602


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PDF SC473 24-Pin SC473 MLP-32 4x4-24 200v 30A schottky MBRS140L MBR0530 33UH 330UF 22NF 10UF 10NF 100PF MLP-4x4-24
2006 - Not Available

Abstract: No abstract text available
Text: Semiconductor Siliconix Infenion Technologies Various Various Series or Part Number IRF7821, IRF6602 , SSC3002S


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PDF SC473 SC473 MLP-32 4x4-24
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