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2005 - IRF6601TR1

Abstract: mosfet 4800 IRF6601
Text: PD - 94366F IRF6601/ IRF6601TR1 HEXFET® Power MOSFET l l l l l l l VDSS RDS(on , Notes through are on page 11 www.irf.com 1 03/09/05 IRF6601/ IRF6601TR1 Static @ TJ = 25 , www.irf.com IRF6601/ IRF6601TR1 1000 1000 VGS 10V 5.0V 4.5V 4.0V 3.5V 3.3V 3.0V BOTTOM , ) Fig 4. Normalized On-Resistance Vs. Temperature 3 160 IRF6601/ IRF6601TR1 6000 12.0 , IRF6601/ IRF6601TR1 30 VGS(th) Gate threshold Voltage (V) 2.0 ID , Drain Current (A) 25


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PDF 94366F IRF6601/IRF6601TR1 IRF6601 IRF6601TR1 mosfet 4800
2005 - AN-1035

Abstract: No abstract text available
Text: IRF6601/ IRF6601TR1 l l l l l l l PD - 94366F HEXFET® Power MOSFET Application Specific , IRF6601/ IRF6601TR1 Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS VDSS/TJ RDS(on) VGS , 0V TJ = 25°C, IF = 21A di/dt = 100A/µs e e 2 www.irf.com IRF6601/ IRF6601TR1 1000 , www.irf.com 3 IRF6601/ IRF6601TR1 6000 VGS, Gate-to-Source Voltage (V) 5000 V GS = 0V, f = , Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF6601/ IRF6601TR1 30


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PDF IRF6601/IRF6601TR1 94366F IRF6601 AN-1035
2004 - Not Available

Abstract: No abstract text available
Text: PD - 94366E IRF6601/ IRF6601TR1 HEXFET® Power MOSFET l l l l l l l VDSS RDS(on , www.irf.com 1 12/17/04 IRF6601/ IRF6601TR1 Static @ TJ = 25°C (unless otherwise specified) Parameter , IRF6601/ IRF6601TR1 1000 1000 VGS 10V 5.0V 4.5V 4.0V 3.5V 3.3V 3.0V BOTTOM 2.7V VGS , On-Resistance Vs. Temperature 3 160 IRF6601/ IRF6601TR1 6000 12.0 V GS = 0V, f = 1MHz C iss , / IRF6601TR1 30 VGS(th) Gate threshold Voltage (V) 2.0 ID , Drain Current (A) 25 20 15


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PDF 94366E IRF6601/IRF6601TR1 IRF6601
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