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Harris Semiconductor
IRF642 16A, 200V, 0.22 OHM, N-CHANNEL POWER MOSFET
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Rochester Electronics IRF642 6,533 1 $0.99 $0.99 $0.88 $0.8 $0.8 More Info
Bristol Electronics IRF642 13 - - - - - More Info
Harris Semiconductor
IRF642R 16A, 200V, 0.22 OHM, N-CHANNEL POWER MOSFET
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Rochester Electronics IRF642R 500 1 $0.99 $0.99 $0.88 $0.8 $0.8 More Info
ISC
IRF642 TO-220
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Karl Kruse GmbH & Co KG IRF642 5,000 - - - - - More Info

IRF642 datasheet (24)

Part Manufacturer Description Type PDF
IRF642 Fairchild Semiconductor N-Channel Power MOSFETs, 18A, 150-200V Scan PDF
IRF642 FCI POWER MOSFETs Scan PDF
IRF642 Frederick Components Power MOSFET Selection Guide Scan PDF
IRF642 General Electric Power Transistor Data Book 1985 Scan PDF
IRF642 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 16A. Scan PDF
IRF642 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
IRF642 International Rectifier TO-220 N-Channel HEXFET Power MOSFET Scan PDF
IRF642 Motorola European Master Selection Guide 1986 Scan PDF
IRF642 Motorola TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39 Scan PDF
IRF642 Motorola Switchmode Datasheet Scan PDF
IRF642 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
IRF642 Others Semiconductor Master Cross Reference Guide Scan PDF
IRF642 Others Semiconductor Master Cross Reference Guide Scan PDF
IRF642 Others FET Data Book Scan PDF
IRF642 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
IRF642 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
IRF642 Others Shortform Datasheet & Cross References Data Scan PDF
IRF642 National Semiconductor N-Channel Power MOSFETs Scan PDF
IRF642 Siliconix MOSPOWER Design Data Book 1983 Scan PDF
IRF642 Vishay Siliconix Shortform Siliconix Datasheet Scan PDF

IRF642 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
IRF640 applications note

Abstract: IRF640 IRF642 IRF643 harris IRF643 TA17422 IRF640 circuit RF1S640SM9A for irf640 irf641
Text: I H A R R I S IRF640, IRF641, IRF642 , S E M IC O N D U C T O R IRF643, RF1S640, RF1S640SM 16A , PART NUMBER IRF640 IRF641 IRF642 IRF643 RF1S640 RF1S640SM PACKAGE TO-220AB TO-220AB TO-220AB TO-220AB TO-262AA TO-263AB IRF640 IRF641 IRF642 IRF643 RF1S640 RF1S640 BRAND GO NOTE: When ordering, use , Procedures. Copyright © Harris Corporation 1997 , p j|e N u m b e r 1585 3 IRF640, IRF641, ÌRF642 , IRF641 150 150 18 11 72 ±20 125 1.0 580 -55 to 150 300 260 IRF642 200 200 16 10 64 ±20 125 1.0 580 -55


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PDF IRF640, IRF641, IRF642, IRF643, RF1S640, RF1S640SM RF642, IRF640 applications note IRF640 IRF642 IRF643 harris IRF643 TA17422 IRF640 circuit RF1S640SM9A for irf640 irf641
linear applications of power MOSFET IRF640

Abstract: irf640 IRF641 IRF640 circuit IRF642 F640 RF642 transistors irf640 IRF643
Text: -——-Standard Power MOSFETs File Number 1585 IRF640, IRF641, IRF642 , IRF643 Power MOS , N-CHANNEL ENHANCEMENT MODE 92CS-3374I TERMINAL DIAGRAM The IRF640, IRF641, IRF642 , and IRF643 are , DESIGNATION 92CS-3952B JEDEC TO-22QAB Absolute Maximum Ratings Parameter IRF640 IRF641 IRF642 IRF643 Units , ,6mm) from case for 10s) °c 3-169 -Standard Power MOSFETs IRF640, IRF641, IRF642 , IRF643 , Conditions bvDSS Drain - Source Breakdown Voltage IRF640 IRF642 200 - - V vGs = IQ =■250«A IRF641


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PDF IRF640, IRF641, IRF642, IRF643 92CS-3374I IRF643 1F640, linear applications of power MOSFET IRF640 irf640 IRF641 IRF640 circuit IRF642 F640 RF642 transistors irf640
IRF640

Abstract: IRF640 SAMSUNG IRF540 IRF642 ir 643 IR irf640
Text: IRF641 IRF642 IRF643 Vos 200V 150V 200V 150V RoS(on) 0 .1 8 ÌÌ 0 .1 8 0 0 .2 2 0 0 .2 2 H Id 18A 18A 16A , 20 0 20 0 IRF641 150 150 ±20 16 10 64 16 10 64 IRF642 200 20 0 IRF643 150 150 Vdc Vdc Vdc Ade Ade Ade , /643 ELECTRICAL CHARACTERISTICS Symbol C haracteristic Drain-Source Breakdown Voltage IR F640/ IRF642 , IRF642 /IRF643 Static Drain-Source On-State Resistance (2) IRF640/IRF641 IR F642/IRF643 4.0 100 -1 0 0 , ) IRF640/IRF641 IRF642 /IRF643 Pulse Source Current(Body Diode)(3) IRF640/IRF641 IRF642 /IRF643 Diode Forward


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PDF IRF640/641/642/643 IRF640 IRF641 IRF642 IRF643 IRF640 SAMSUNG IRF540 ir 643 IR irf640
RF640

Abstract: irf640 IRF640 applications note IRF641 RF1S640SM9A IRF643 RF643 RF1S640 IRF640 circuit TA17422
Text: IRF640, IRF641, IRF642 , .e-,conductor ¡RF643, RF1S640, RF1S640SM 16A and 18A, 150V and 200V , BRAND IRF640 TO-220AB IRF640 IRF641 TO-220AB IRF641 IRF642 TO-220AB IRF642 IRF643 TO-220AB IRF643 , Ratings Tc = 25°c, Unless Otherwise Specified IRF640, RF1S640, RF1S640SM IRF641 IRF642 IRF643 UNITS , SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage IRF640, IRF642 , RF1S640 , - A IRF642 , IRF643 16 - - A Gate to Source Leakage Current 'gss VGS = ±20V - - ±100 nA Drain


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PDF IRF640, IRF641, IRF642, RF643, RF1S640, RF1S640SM TB334 IRF640 O-220AB IRF640 RF640 IRF640 applications note IRF641 RF1S640SM9A IRF643 RF643 RF1S640 IRF640 circuit TA17422
IRFG43

Abstract: motor driver IRF640
Text: IRFS40 IRFG41 IRF642 IRFG43 N-CHANNEL 200 Volt, 0.18 Ohm HEXFET T0-220AB Plastic Package , 0 .1 8 0 18A IRF642 200V 0 .2 2 0 16A IRF643 150V 0 .2 2 0 16A T he , -2 5 3 !d IRF640, 1RF641, IRF642 , IRF643 Devices HE D | 4flSS4S5 OOaaSQS Q I , IRF642 , IRF643 Units ID @ Te “ 2ö°C Continuous Drain Current 18 16 A ip @ T q â , IRF642 IRF641 IRF643 IRF640 IRF641 200 Typ. Max. V Q VGS - 10V, l0 >10A A -


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PDF IRFS40 IRFG41 IRF642 IRFG43 T0-220AB IRF640 IRF641 IRF643 C-259 IRFG43 motor driver IRF640
1997 - IRF640 applications note

Abstract: IRF640 irf6401 IRF641 IRF643 harris IRF642 RF1S640SM9A TB334 RF1S640SM IRF643
Text: IRF640, IRF641, IRF642 , IRF643, RF1S640, RF1S640SM S E M I C O N D U C T O R 16A and 18A , -220AB IRF641 IRF642 TO-220AB IRF642 IRF643 TO-220AB IRF643 RF1S640 TO-262AA RF1S640 , 5-1 File Number 1585.3 IRF640, IRF641, IRF642 , IRF643, RF1S640, RF1S640SM TC = 25oC, Unless , 1.0 580 -55 to 150 IRF641 150 150 18 11 72 ±20 125 1.0 580 -55 to 150 IRF642 200 , PARAMETER MIN TYP MAX UNITS IRF640, IRF642 , RF1S640, RF1S640SM 200 - - V


Original
PDF IRF640, IRF641, IRF642, IRF643, RF1S640, RF1S640SM IRF640 applications note IRF640 irf6401 IRF641 IRF643 harris IRF642 RF1S640SM9A TB334 RF1S640SM IRF643
IRF740 "direct replacement"

Abstract: irf9640 REPLACEMENT GUIDE IRF9540 replacement IRF640 irf510 2Sk350 HITACHI rca9213a IRF9613 fu120 buz11 cross reference 2SK309
Text: IRF610 IRF611 IRF612 IRF613 IRF620 IRF621 IRF622 IRF623 IRF630 IRF631 IRF632 IRF633 IRF640 IRF641 IRF642 , IRF632 IRF633 IRF640 IRF641 IRF642 IRF643 IRF710 IRF711 IRF712 IRF713 IRF720 IRF721 IRF722 IRF723 IRF730 , placement IRF532 IRF532 IRF643 IRF743 IRF533 IRF823 IRF822 IRF612 IRF612 IRF723 IRF533 IRF532 IRF532 IRF642 IRF642 IRF543 IRF543 IRF723 IRF722 IRF823 MOTOROLA MTP2N50 MTP3N12 MTP3N15 MTP3N18 MTP3N20 MTP3N35 , IRF642 IRF543 IRF543 IRF643 IRF542 IRF541 RCA RCA9212A RCA9212B RCA9213A RCA9213B RCA9230A RFP1N35


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PDF IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRF610 IRF611 IRF740 "direct replacement" irf9640 REPLACEMENT GUIDE IRF9540 replacement IRF640 irf510 2Sk350 HITACHI rca9213a IRF9613 fu120 buz11 cross reference 2SK309
irf640

Abstract: irfp240 for irf640 irfp242 IRF640 n-channel MOSFET Diode c 642 IRFP243 IR 643 power MOSFET IRF640 Mosfet irfp240
Text: SUMMARY Part Number IRF640/IRFP140 IRF641 IRFP241 IRF642 /IRFP242 1RF643/IRFP243 Vos 200V 150V 200V 150 V , .5 580 18 125 IRF640 IRFP240 200 200 IRF641 IRFP241 150 150 ±20 16 10 64 16 10 64 IRF642 IRFP242 200 , ELECTRICAL CHARACTERISTICS Symbol C haracteristic Drain-Source Breakdown Voltage IRF640/IRFP240 IRF642 , IRF641 /IRFP241 IRF642 /IRFP242 IRF643/IRFP243 - - 4.0 100 -1 0 0 250 1000 V ds= V gs, Id = 2 5 , IRF642 /IRFP242 IRF643/IRFP243 Pulse Source Current(Body Diode)(3) IRF640/IRFP240 IRF641 /IRFP241 IR F642


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PDF IRF640/641/642/643 IRFP240/241/242/243 IRF640/IRFP140 IRF641 IRFP241 IRF642/IRFP242 1RF643/IRFP243 IRF640/641Z642/643 irf640 irfp240 for irf640 irfp242 IRF640 n-channel MOSFET Diode c 642 IRFP243 IR 643 power MOSFET IRF640 Mosfet irfp240
IRF640

Abstract: IRF540 IRF643 IRF642 IRF641 IRF633 IRF632 IRF631 IRF630 IRF622
Text: 18.0 125 IRF640 200 0.22 16.0 125 IRF642 200 0.4 9.0 75 IRF630 200 0.6 8.0 75 IRF632 200 0.8 , – IRF642 ■IRF643 200V N-Channel Enhancement-Mode MOSPOWER a Siliconix Advanced Information These , ‚ . IRF243 150 IRF640 200 0.18ÍÍ 18A IRF641 150 TO-220AB IRF642 200 0.220 16A IRF643 150 , , 243 IRF642 , 643 0.22 Dynamic gis Forward Transconductance All 6.0 S VDS = 25V, Id = 10A


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PDF IRF640 IRF642 IRF630 IRF632 IRF620 IRF622 VN1706D IRF641 IRF643 IRF631 IRF640 IRF540 IRF643 IRF642 IRF641 IRF633 IRF632 IRF631 IRF630 IRF622
Not Available

Abstract: No abstract text available
Text: IRF642 IRF642R IRF643 IRF643R UNITS 150 150 200 200 150 150 V V 18 11 72  , Capacitance MAX - Vg s = -20V IRF642 /643, IRF642R /643R Static Drain-Source On-State Resistance , , IRF642 , and IRF643 are n-channel enhancement-mode silicon-gate power field-effect transis­ tors. IRF640R, IRF641R, IRF642R and IRF643R types are advanced power MOSFETs designed, tested, and guaranteed , (Gate-Source + Gate-Drain) Gate-Source Charge Gate-Drain (“ Miller” ) Charge UNITS 16 IRF642 /643


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PDF QDS4033 F640/641/642/643 F640R /641R /642R /643R T0-22QAB IRF640, IRF641, IRF642,
motorola irf640

Abstract: 643 lt IRF 640 mosfet IRF640 mosfet
Text: TECHNICAL DATA SEMICONDUCTOR IRF640 IRF641 IRF642 IRF643 TM O S PO W ER FE T s 16 and 18 A M P ER ES rOS(on) = 0 18 0H M 150 and 200 V O LT S rDS(on) = 0.22 O H M S 150 and 200 V O LT S , F 6 4 1 . Sym bol Min Max 1 Unit V (B R )D S S IRF640, IRF642 IRF641, IRF643 lD SS , {on) IRF640, IRF641 IRF642 , IRF643 'Dion) IRF640, IRF641 IRF642 , IRF643 2 4 Vdc Ohm - - 18 0.18 0.22 Adc - 16 - m hos - 9FS IRF640, IRF641 IRF642 , IRF643 6 6 - C


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PDF IRF640 IRF641 IRF642 IRF643 IRF640, IRF642, motorola irf640 643 lt IRF 640 mosfet IRF640 mosfet
IRF240

Abstract: IN4723 irf640 IRF241 diodes IN4723 IRF243 IRF642 IRF641 IRF242 IRF643
Text: ss ota IRF240 ■IRF241 ■IRF242 ■IRF243 IRF640 ■IRF641 ■IRF642 ■IRF643 200V N-Channel Enhancement-Mode MOSPOWER a Siliconix Advanced Information These power FETs are designed especially for offline switching regulators, converters, solenoid and relay drivers. SèSè atee FEATURES , Ã 18A IRF641 150 TO-220AB IRF642 200 0.220 16A IRF643 150 I ¡fa ABSOLUTE MAXIMUM RATINGS , , 243 IRF642 , 643 0.22 Dynamic gis Forward Transconductance All 6.0 S VDS = 25V, Id = 10A


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PDF IRF240 IRF241 IRF242 IRF243 IRF640 IRF641 IRF642 IRF643 IRF240 IRF241 IN4723 irf640 diodes IN4723 IRF642 IRF641 IRF242 IRF643
IRFP240

Abstract: IRF640 SAMSUNG
Text: IRF641 IRFP241 IRF642 IRFP242 IRF643 IRFP243 Unit Drain-Source Voltage (1) Voss 20 0 , (2) IRF640/IRFP240 IRF641/IRFP241 - 0 .1 3 0 18 n IRF642 /IRFP242 IRF643/IRFP243 , IRF641/IRFP241 - - 2 .0 V Tc = 2 5 ° C , ls = 1 8 A , V s s = 0 V IRF642 /IRFP242 IRF643/IRFP243 Vsd - IRF642 /IRFP242 IRF643/IRFP243 ISM - IR F642/IRFP242 IRF643


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PDF IRF640/641 IRFP240/241/242/243 OG121TI O-220 IRF640/IRFP140 IRF641 IRFP241 F642/IRFP242 IRF643/IRFP243 IRF640/641/642/643 IRFP240 IRF640 SAMSUNG
diodes IN4723

Abstract: irf640 IRF450 IRF442 IRF440 IRF432 IRF430 IRF422 IRF420 for irf640
Text: ■IRF243 IRF640 ■IRF641 ■IRF642 ■IRF643 200V N-Channel Enhancement-Mode MOSPOWER a , -3 IRF242 200 0.22ÍT 16Â . IRF243 150 IRF640 200 0.18ÍÍ 18A IRF641 150 TO-220AB IRF642 200 , a VQS = 10V, lD = 10A (Note 1) IRF242, 243 IRF642 , 643 0.22 Dynamic gis Forward


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PDF IRF450 IRF452 IRF440 IRF442 VNP002A* VN5001A IRF430 VN5002A IRF432 IRF420 diodes IN4723 irf640 IRF450 IRF442 IRF440 IRF432 IRF430 IRF422 IRF420 for irf640
k106 transistor

Abstract: IRC643 IRF642 IRF643 IRF642 ge C643
Text:  LEE] FIELD EFFECT POWER TRANSISTOR IRF642 ,643 116 AMPERES 200,150 VOLTS RDS(ON) = Ù.22 n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device rugged-ness and reliability. This design has been , IRF642 IRF643 UNITS Drain-Source Voltage Voss 200 150 Volts Drain-Gate Voltage, Rqs = 1Mil VdGR 200 150 , Voltage IRF642 (VQS = OV, lD = 250 //A) IRF643 BVDSS 200 150 — —* Volts Zero Gate Voltage Drain


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PDF IRF642 TC-26I 100ms k106 transistor IRC643 IRF643 IRF642 ge C643
IRF640 equivalent

Abstract: irf630 irf640 VN0108N2 VN67AF IRF540 irf640 BUZ 72 A equivalent IRF842 IRF522 equivalent IRF640 FI
Text: 200 0.22 16.0 125 IRF642 200 0.4 9.0 75 IRF630 200 0.6 8.0 75 IRF632 200 0.8 5.0 40 IRF620 200 , Siliconix ss ota IRF240 ■IRF241 ■IRF242 ■IRF243 IRF640 ■IRF641 ■IRF642 ■IRF643 200V , Ã 18A IRF641 150 TO-220AB IRF642 200 0.220 16A IRF643 150 I ¡fa ABSOLUTE MAXIMUM RATINGS , , 243 IRF642 , 643 0.22 Dynamic gis Forward Transconductance All 6.0 S VDS = 25V, Id = 10A


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PDF O-220 VN1000D IRF522 VN1000A IRF540 IRF632 IRF640 IRF640 equivalent irf630 irf640 VN0108N2 VN67AF BUZ 72 A equivalent IRF842 equivalent IRF640 FI
equivalent IRF640 FI

Abstract: IRF640 equivalent BUZ 72 A equivalent BUZ34 VN0108N2 irf740 equivalent sony 2sj54 IRF632 IRF540 IRF240
Text: !) ss ota IRF240 ■IRF241 ■IRF242 ■IRF243 IRF640 ■IRF641 ■IRF642 ■IRF643 200V , Ã 18A IRF641 150 TO-220AB IRF642 200 0.220 16A IRF643 150 I ¡fa ABSOLUTE MAXIMUM RATINGS , , 243 IRF642 , 643 0.22 Dynamic gis Forward Transconductance All 6.0 S VDS = 25V, Id = 10A


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PDF O-220 VN1000D IRF522 VN1000A IRF540 IRF632 IRF640 equivalent IRF640 FI IRF640 equivalent BUZ 72 A equivalent BUZ34 VN0108N2 irf740 equivalent sony 2sj54 IRF240
2001 - MOSFET 10A

Abstract: No abstract text available
Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: (561) 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TO-220AB TYPE: IRF642 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING: Drain ­ Source Voltage Drain ­ Gate Voltage Drain Current ­ Continuous Drain Current ­ Pulsed Gate ­ Source Voltage Power Dissipation , mA Adc Ohms mhos Vdc Vdc pF pF pF 4.0 500 0.25 1.0 16 0.22 Page 1 of 2 TYPE: IRF642


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PDF O-220AB IRF642 MOSFET 10A
IRF615

Abstract: No abstract text available
Text: POWER MOSFETs TO-220 NCHANNEL BVdss(V) 150.00 (Continued) RDS(onXQ) 2.40 2.40 1.50 1.20 1.20 0.80 0.60 0.60 0.40 0.22 0.22 0.18 2.40 2.40 1.50 1.20 1.20 0.80 0.60 0.60 0.40 0.22 0.22 0.18 3.00 2.00 1.50 1.10 0.68 0.45 0.34 0.28 5.00 3.60 2.50 1.80 1.50 1.00 0.80 0.55 5.00 3.60 2.50 1.80 1.50 1.00 0.80 0.55 Part Number IRL611 IRF613 IRF611 IRL621 IRF623 IRF621 IRL631 IRF633 IRF631 IRL641 IRF643 IRF641 IRL610 IRF612 IRF610 IRL620 IRF622 IRF620 IRL630 IRF632 IRF630 IRL640 IRF642 IRF640 IRF615 IRF614


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PDF O-220 IRL611 IRF613 IRF611 IRL621 IRF623 IRF621 IRL631 IRF633 IRF631 IRF615
Not Available

Abstract: No abstract text available
Text: IRF642 Transistors N-Channel Enhancement MOSFET Military/High-RelN V(BR)DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)16# I(DM) Max. (A) Pulsed I(D)10 @Temp (øC)100 IDM Max (@25øC Amb)64# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125# Minimum Operating Temp (øC)-55õ Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case1 Thermal Resistance Junc-Amb.80 V(GS)th Max. (V)4 V(GS)th (V) (Min)2 @(VDS) (V) (Test Condition) @I(D) (A) (Test Condition)250u I(DSS) Max. (A)250u


Original
PDF IRF642
T0204AA

Abstract: No abstract text available
Text: NATL N -Channel P o w er M O S F E T s (Continued) Type No. IRF640 IRF641 IRF642 IRF643 IRF340 IRFP340 IRF341 IRFP341 Style TO-220 (37) TO-220 (37) T0-220 (37) T0-220 (37) T0-204AA (42) TO-3P (40) T0-204AA (42) TO-3P (40) T0-204AA (42) T0-204AA (42) TO-220 (37) TO-220 (37) T0-220 (37) TO-220 (37) T0-204AA (42) TO-3P (40) TO-2Ü4AA (42) (W) Tc = 25°C 125 125 125 125 125 150 125 150 125 125 125 125 125 125 125 150 125 Pd Vdss (V) Min 200 150 200 150 400 400 350 350 400 350 400 350 400 350


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PDF IRF640 IRF641 IRF642 IRF643 IRF340 IRFP340 IRF341 IRFP341 O-220 T0204AA
irf640

Abstract: IRF240 RF640 IRF 1640 IRF640-643 IRF640 applications note PULSE GENERATOR IRF242 IRF-240 IRF641 IRF642
Text: Requirements • Ease of Paralleling IRF240 IRF241 IRF242 IRF243 TO-220AB IRF640 IRF641 IRF642 IRF643 , 0.22 ft 16 A 10 A IRF640 20a V 0.18 ft 18 A 11 A TO-220AB IRF641 150 V 0.18 ft 18 A 11 A IRF642


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PDF 34bTti74 IRF240-243/IRF640-643 IRF240 IRF241 IRF242 IRF243 O-220AB IRF640 IRF641 IRF642 RF640 IRF 1640 IRF640-643 IRF640 applications note PULSE GENERATOR IRF-240
1RFP250

Abstract: IRF250 TO-247 THOMSON DISTRIBUTOR IRF631 IRFD311 IRF250 IRFD210 IRF331 irf220 IRF241
Text: 5.50 0.40 irff230 8 0.60 irf232 irf632 9 0.40 irf230 irf630 16 0.22 irf242 irf642 18


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PDF 000570b O-204 O-205 O-220 O-247 irf223 irf623 irff233 irf221 irf621 1RFP250 IRF250 TO-247 THOMSON DISTRIBUTOR IRF631 IRFD311 IRF250 IRFD210 IRF331 irf220 IRF241
irf630 irf640

Abstract: MTP8N18 MTP4N18 MTP4N20 MTP2N40 MTP8N20 IRF732 IRF730 IRF722 IRF712
Text: 100 0.22 10 IRF642 16 125 0.18 IRF640 18 180 1.8 1 MTP2N18 2 50 1.2 2 MTP4N18 4 1 2.5


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PDF T0-220AB 21A-02 IRF712 MTP2N40 IRF710 MTP3N40 IRF722 IRF720 MTP4N40 IRF732 irf630 irf640 MTP8N18 MTP4N18 MTP4N20 MTP8N20 IRF730
f640

Abstract: IR 643 643R
Text: 11 72 ±20 125 1.0 72 580 -5 5 t o + 150 300 IRF642 IRF642R 200 200 16 10 64 ±20 125 1.0 64 580 -5 , escription The IRF640, IRF641, IRF642 , and IR F643 are n-channel enhancement-mode silicon-gate power fleld-effect transis tors. IRF640R, IRF641R, IRF642R and IRF643R types are advanced power MOSFETs designed , Current (Note 2) IR F640/641, IRF640R/641R IR F642/643, IRF642R /643R Static D rain-Source On-State Resistance (Note 2) IR F640/641, IRF640R/641R IR F642/643, IRF642R /643R Forward Transconductance (Note 2


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PDF F640/641/642/643 F640R/641R/642R /643R IRF640, IRF641, IRF642, IRF640R, IRF641R, IRF642R IRF643R f640 IR 643 643R
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