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Harris Semiconductor
IRF641 Power Field-Effect Transistor, 18A I(D), 150V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Rochester Electronics IRF641 14,411 1 $1.94 $1.94 $1.73 $1.58 $1.58 More Info
Vishay Siliconix
IRF641
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Bristol Electronics IRF641 400 - - - - - More Info

IRF641 datasheet (23)

Part Manufacturer Description Type PDF
IRF641 Fairchild Semiconductor N-Channel Power MOSFETs, 18A, 150-200V Scan PDF
IRF641 FCI POWER MOSFETs Scan PDF
IRF641 Frederick Components Power MOSFET Selection Guide Scan PDF
IRF641 General Electric Power Transistor Data Book 1985 Scan PDF
IRF641 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 18A. Scan PDF
IRF641 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
IRF641 International Rectifier TO-220 N-Channel HEXFET Power MOSFET Scan PDF
IRF641 Intersil Obsolete Product Datasheet Scan PDF
IRF641 Motorola European Master Selection Guide 1986 Scan PDF
IRF641 Motorola Switchmode Datasheet Scan PDF
IRF641 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
IRF641 Others Semiconductor Master Cross Reference Guide Scan PDF
IRF641 Others FET Data Book Scan PDF
IRF641 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
IRF641 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
IRF641 Others Shortform Datasheet & Cross References Data Scan PDF
IRF641 National Semiconductor N-Channel Power MOSFETs Scan PDF
IRF641 Siliconix MOSPOWER Design Data Book 1983 Scan PDF
IRF641FI Others Shortform Datasheet & Cross References Data Scan PDF
IRF641(R) Toshiba Power MOSFETs Cross Reference Guide Original PDF

IRF641 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
RF640

Abstract: irf640 IRF640 applications note IRF641 RF1S640SM9A IRF643 RF643 RF1S640 IRF640 circuit TA17422
Text: IRF640, IRF641 , IRF642, .e-,conductor ¡RF643, RF1S640, RF1S640SM 16A and 18A, 150V and 200V , BRAND IRF640 TO-220AB IRF640 IRF641 TO-220AB IRF641 IRF642 TO-220AB IRF642 IRF643 TO-220AB IRF643 , 1998 . File Number 1585.4 IRF640, IRF641 , ÌRF642, IRF643, RF1S640, RF1S640SM Absolute Maximum Ratings Tc = 25°c, Unless Otherwise Specified IRF640, RF1S640, RF1S640SM IRF641 IRF642 IRF643 UNITS , , RF1S640SM BVdss lD = 250nA, VGS = 0V, (Figure 10) 200 - - V IRF641 , IRF643 150 - - V Gate Threshold


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PDF IRF640, IRF641, IRF642, RF643, RF1S640, RF1S640SM TB334 IRF640 O-220AB IRF640 RF640 IRF640 applications note IRF641 RF1S640SM9A IRF643 RF643 RF1S640 IRF640 circuit TA17422
linear applications of power MOSFET IRF640

Abstract: irf640 IRF641 IRF640 circuit IRF642 F640 RF642 transistors irf640 IRF643
Text: -——-Standard Power MOSFETs File Number 1585 IRF640, IRF641 , IRF642, IRF643 Power MOS , N-CHANNEL ENHANCEMENT MODE 92CS-3374I TERMINAL DIAGRAM The IRF640, IRF641 , IRF642, and IRF643 are , DESIGNATION 92CS-3952B JEDEC TO-22QAB Absolute Maximum Ratings Parameter IRF640 IRF641 IRF642 IRF643 Units , ,6mm) from case for 10s) °c 3-169 -Standard Power MOSFETs IRF640, IRF641 , IRF642, IRF643 , Conditions bvDSS Drain - Source Breakdown Voltage IRF640 IRF642 200 - - V vGs = IQ =■250«A IRF641


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PDF IRF640, IRF641, IRF642, IRF643 92CS-3374I IRF643 1F640, linear applications of power MOSFET IRF640 irf640 IRF641 IRF640 circuit IRF642 F640 RF642 transistors irf640
IRF641

Abstract: IRF643 IRF841 PFC55
Text: Voltage 305. 3875081 G E SOLID STAJE Standard Power MOSFETs _ IRF641. IRF643 □ 1 01E 18363 O if , IRF641 , IRF643 File Number 1585 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power , characteristics ■High input impedance ■Majority carrier device The IRF641 and IRF643 are n-channel , TERMINAL DESIGNATION »2CS-3992« JEDEC TO-220AB Absolute Maximum Ratings Parameter IRF641 IRF643 Units , E SOL ID STATE_ 01E 18360 13 DE| 3fi7S□ öl □□1Ö3LD b J"- StandardPowerM0SFETs IRF641


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PDF IRF641, IRF643 IRF641 IRF841 PFC55
IRF640 applications note

Abstract: IRF640 IRF642 IRF643 harris IRF643 TA17422 IRF640 circuit RF1S640SM9A for irf640 irf641
Text: I H A R R I S IRF640, IRF641 , IRF642, S E M IC O N D U C T O R IRF643, RF1S640, RF1S640SM 16A , PART NUMBER IRF640 IRF641 IRF642 IRF643 RF1S640 RF1S640SM PACKAGE TO-220AB TO-220AB TO-220AB TO-220AB TO-262AA TO-263AB IRF640 IRF641 IRF642 IRF643 RF1S640 RF1S640 BRAND GO NOTE: When ordering, use , Procedures. Copyright © Harris Corporation 1997 , p j|e N u m b e r 1585 3 IRF640, IRF641 , ÌRF642 , IRF641 150 150 18 11 72 ±20 125 1.0 580 -55 to 150 300 260 IRF642 200 200 16 10 64 ±20 125 1.0 580 -55


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PDF IRF640, IRF641, IRF642, IRF643, RF1S640, RF1S640SM RF642, IRF640 applications note IRF640 IRF642 IRF643 harris IRF643 TA17422 IRF640 circuit RF1S640SM9A for irf640 irf641
IRF640

Abstract: IRF640 SAMSUNG IRF540 IRF642 ir 643 IR irf640
Text: IRF641 IRF642 IRF643 Vos 200V 150V 200V 150V RoS(on) 0 .1 8 ÌÌ 0 .1 8 0 0 .2 2 0 0 .2 2 H Id 18A 18A 16A , 20 0 20 0 IRF641 150 150 ±20 16 10 64 16 10 64 IRF642 200 20 0 IRF643 150 150 Vdc Vdc Vdc Ade Ade Ade , IRF641 /IRF643 V G S (th ) N-CHANNEL POWER MOSFETS (T c = 2 5 °C unless otherwise specified) Max , IRF642/IRF643 Static Drain-Source On-State Resistance (2) IRF640/ IRF641 IR F642/IRF643 4.0 100 -1 0 0 , ) IRF640/ IRF641 IRF642/IRF643 Pulse Source Current(Body Diode)(3) IRF640/ IRF641 IRF642/IRF643 Diode Forward


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PDF IRF640/641/642/643 IRF640 IRF641 IRF642 IRF643 IRF640 SAMSUNG IRF540 ir 643 IR irf640
IRFG43

Abstract: motor driver IRF640
Text: Product Summary Part Number bvdss R DS(on) IRF640 200V 0 .1 8 0 18A IRF641 150V , INTERNATIONAL R E C T I F I E R T— 15 39— Absolute Maximum Ratings IRFS40, IRF641 Parameter , IRF642 IRF641 IRF643 IRF640 IRF641 200 Typ. Max. V Q VGS - 10V, l0 >10A A - , 0.22 IRF640 IRF641 18 IRF642 IRF643 On-State Drain Current © Vq s - OV, lD = 250mA , the internal Inductances. oQ 4 J ) HE D I 4ÛS54S2 INTERNATIONAL |RF640, IRF641


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PDF IRFS40 IRFG41 IRF642 IRFG43 T0-220AB IRF640 IRF641 IRF643 C-259 IRFG43 motor driver IRF640
1997 - IRF640 applications note

Abstract: IRF640 irf6401 IRF641 IRF643 harris IRF642 RF1S640SM9A TB334 RF1S640SM IRF643
Text: IRF640, IRF641 , IRF642, IRF643, RF1S640, RF1S640SM S E M I C O N D U C T O R 16A and 18A , Ordering Information PART NUMBER PACKAGE D BRAND IRF640 TO-220AB IRF640 IRF641 TO-220AB IRF641 IRF642 TO-220AB IRF642 IRF643 TO-220AB IRF643 RF1S640 TO-262AA RF1S640 , 5-1 File Number 1585.3 IRF640, IRF641 , IRF642, IRF643, RF1S640, RF1S640SM TC = 25oC, Unless , 1.0 580 -55 to 150 IRF641 150 150 18 11 72 ±20 125 1.0 580 -55 to 150 IRF642 200


Original
PDF IRF640, IRF641, IRF642, IRF643, RF1S640, RF1S640SM IRF640 applications note IRF640 irf6401 IRF641 IRF643 harris IRF642 RF1S640SM9A TB334 RF1S640SM IRF643
IRFP240

Abstract: IRF640 SAMSUNG
Text: RDS IRF641 'IRFP241 150V 0.18Í1 , IRF641 IRFP241 IRF642 IRFP242 IRF643 IRFP243 Unit Drain-Source Voltage (1) Voss 20 0 , V IRF641 /IRFP241 IRF643/IRFP243 150 - - V Gate Threshold Voltage 2.0 â , (2) IRF640/IRFP240 IRF641 /IRFP241 - 0 .1 3 0 18 n IRF642/IRFP242 IRF643/IRFP243 , Continuous Source Current (Body Diode) IRF640/IRFP240 IRF641 /IRFP241 Min Typ Max Units Test


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PDF IRF640/641 IRFP240/241/242/243 OG121TI O-220 IRF640/IRFP140 IRF641 IRFP241 F642/IRFP242 IRF643/IRFP243 IRF640/641/642/643 IRFP240 IRF640 SAMSUNG
irf640

Abstract: irfp240 for irf640 irfp242 IRF640 n-channel MOSFET Diode c 642 IRFP243 IR 643 power MOSFET IRF640 Mosfet irfp240
Text: SUMMARY Part Number IRF640/IRFP140 IRF641 IRFP241 IRF642/IRFP242 1RF643/IRFP243 Vos 200V 150V 200V 150 V , .5 580 18 125 IRF640 IRFP240 200 200 IRF641 IRFP241 150 150 ±20 16 10 64 16 10 64 IRF642 IRFP242 200 , /IRFP242 IRF641 /IRFP241 IRF643/IRFP243 VGS(th) Ig s s N-CHANNEL POWER MOSFETS (T c = 2 5 °C unless , IRF641 /IRFP241 IRF642/IRFP242 IRF643/IRFP243 - - 4.0 100 -1 0 0 250 1000 V ds= V gs, Id = 2 5 , CHARACTERISTICS Symbol C haracteristic Continuous Source Current (Body Diode) IRF640/IRFP240 IRF641 /IRFP241


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PDF IRF640/641/642/643 IRFP240/241/242/243 IRF640/IRFP140 IRF641 IRFP241 IRF642/IRFP242 1RF643/IRFP243 IRF640/641Z642/643 irf640 irfp240 for irf640 irfp242 IRF640 n-channel MOSFET Diode c 642 IRFP243 IR 643 power MOSFET IRF640 Mosfet irfp240
IRF640

Abstract: IRF540 IRF643 IRF642 IRF641 IRF633 IRF632 IRF631 IRF630 IRF622
Text: 5.0 40 IRF620 200 1.2 4.0 40 IRF622 170 6.0 1.4 20 VN1706D 150 0.18 18.0 125 IRF641 150 0.22 , 1.2 6.25 VN35AB 1-14 Siliconix ss ota IRF240 ■IRF241 ■IRF242 ■IRF243 IRF640 ■IRF641 â , ‚ . IRF243 150 IRF640 200 0.18ÍÍ 18A IRF641 150 TO-220AB IRF642 200 0.220 16A IRF643 150 , IRF240, 242 IRF640, 642 200 V VQS = o, lD = 250^A IRF241, 243 IRF641 , 643 150 vGS(th) Gate


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PDF IRF640 IRF642 IRF630 IRF632 IRF620 IRF622 VN1706D IRF641 IRF643 IRF631 IRF640 IRF540 IRF643 IRF642 IRF641 IRF633 IRF632 IRF631 IRF630 IRF622
motorola irf640

Abstract: 643 lt IRF 640 mosfet IRF640 mosfet
Text: TECHNICAL DATA SEMICONDUCTOR IRF640 IRF641 IRF642 IRF643 TM O S PO W ER FE T s 16 and 18 A M P ER ES rOS(on) = 0 18 0H M 150 and 200 V O LT S rDS(on) = 0.22 O H M S 150 and 200 V O LT S , F 6 4 1 . Sym bol Min Max 1 Unit V (B R )D S S IRF640, IRF642 IRF641 , IRF643 lD SS , {on) IRF640, IRF641 IRF642, IRF643 'Dion) IRF640, IRF641 IRF642, IRF643 2 4 Vdc Ohm - - 18 0.18 0.22 Adc - 16 - m hos - 9FS IRF640, IRF641 IRF642, IRF643 6 6 - C


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PDF IRF640 IRF641 IRF642 IRF643 IRF640, IRF642, motorola irf640 643 lt IRF 640 mosfet IRF640 mosfet
IRF240

Abstract: IN4723 irf640 IRF241 diodes IN4723 IRF243 IRF642 IRF641 IRF242 IRF643
Text: ss ota IRF240 ■IRF241 ■IRF242 ■IRF243 IRF640 ■IRF641 ■IRF642 ■IRF643 200V N-Channel Enhancement-Mode MOSPOWER a Siliconix Advanced Information These power FETs are designed especially for offline switching regulators, converters, solenoid and relay drivers. SèSè atee FEATURES , Ã 18A IRF641 150 TO-220AB IRF642 200 0.220 16A IRF643 150 I ¡fa ABSOLUTE MAXIMUM RATINGS , IRF640, 642 200 V VQS = o, lD = 250^A IRF241, 243 IRF641 , 643 150 vGS(th) Gate Threshold Voltage


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PDF IRF240 IRF241 IRF242 IRF243 IRF640 IRF641 IRF642 IRF643 IRF240 IRF241 IN4723 irf640 diodes IN4723 IRF642 IRF641 IRF242 IRF643
2001 - Not Available

Abstract: No abstract text available
Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: (561) 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TO-220AB TYPE: IRF641 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING: Drain ­ Source Voltage Drain ­ Gate Voltage Drain Current ­ Continuous Drain Current ­ Pulsed Gate ­ Source Voltage Power Dissipation , mA Adc Ohms mhos Vdc Vdc pF pF pF 4.0 500 0.25 1.0 18 0.18 Page 1 of 2 TYPE: IRF641


Original
PDF O-220AB IRF641
IRF740 "direct replacement"

Abstract: irf9640 REPLACEMENT GUIDE IRF9540 replacement IRF640 irf510 2Sk350 HITACHI rca9213a IRF9613 fu120 buz11 cross reference 2SK309
Text: POWER MOSFETs SAMSUNG Direct Replace ment IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRF610 IRF611 IRF612 IRF613 IRF620 IRF621 IRF622 IRF623 IRF630 IRF631 IRF632 IRF633 IRF640 IRF641 IRF642 , IRF632 IRF633 IRF640 IRF641 IRF642 IRF643 IRF710 IRF711 IRF712 IRF713 IRF720 IRF721 IRF722 IRF723 IRF730 , IRF522 IRF522 IRF633 IRF610 IRF610 IRF612 IRF541 IRF540 IRF641 IRF642 IRF741 IRF741 IRF740 IRF842 IRF611 IRF612 IRF612 CROSS REFERENCE GUIDE SAMSUNG Direct Re placement IRF641 IRF643 IRF713 IRF731 IRF733


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PDF IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRF610 IRF611 IRF740 "direct replacement" irf9640 REPLACEMENT GUIDE IRF9540 replacement IRF640 irf510 2Sk350 HITACHI rca9213a IRF9613 fu120 buz11 cross reference 2SK309
diodes IN4723

Abstract: irf640 IRF450 IRF442 IRF440 IRF432 IRF430 IRF422 IRF420 for irf640
Text: ■IRF243 IRF640 ■IRF641 ■IRF642 ■IRF643 200V N-Channel Enhancement-Mode MOSPOWER a , -3 IRF242 200 0.22ÍT 16 . IRF243 150 IRF640 200 0.18ÍÍ 18A IRF641 150 TO-220AB IRF642 200 , €ž. Drain-Source Breakdown BV°SS Voltage IRF240, 242 IRF640, 642 200 V VQS = o, lD = 250^A IRF241, 243 IRF641


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PDF IRF450 IRF452 IRF440 IRF442 VNP002A* VN5001A IRF430 VN5002A IRF432 IRF420 diodes IN4723 irf640 IRF450 IRF442 IRF440 IRF432 IRF430 IRF422 IRF420 for irf640
Not Available

Abstract: No abstract text available
Text: Number V ds RDS(on) Id IRF640 200V 0 .180 18A IRF641 150V 0 .1 8 0 18A ABSOLUTE MAXIMUM RATINGS Symbol IRF640 IRF641 Unit Drain-Source Voltage (1) Characteristic , IRF641 150 Gate Threshold Voltage 2.0 - 4.0 V V ds=Vgs , Id=250/


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PDF IRF640/641 IRF640 IRF641
IRF640 equivalent

Abstract: irf630 irf640 VN0108N2 VN67AF IRF540 irf640 BUZ 72 A equivalent IRF842 IRF522 equivalent IRF640 FI
Text: 1.2 4.0 40 IRF622 170 6.0 1.4 20 VN1706D 150 0.18 18.0 125 IRF641 150 0.22 16.0 125 IRF643 150 , Siliconix ss ota IRF240 ■IRF241 ■IRF242 ■IRF243 IRF640 ■IRF641 ■IRF642 ■IRF643 200V , Ã 18A IRF641 150 TO-220AB IRF642 200 0.220 16A IRF643 150 I ¡fa ABSOLUTE MAXIMUM RATINGS , IRF640, 642 200 V VQS = o, lD = 250^A IRF241, 243 IRF641 , 643 150 vGS(th) Gate Threshold Voltage


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PDF O-220 VN1000D IRF522 VN1000A IRF540 IRF632 IRF640 IRF640 equivalent irf630 irf640 VN0108N2 VN67AF BUZ 72 A equivalent IRF842 equivalent IRF640 FI
Not Available

Abstract: No abstract text available
Text: temperature. See Transient Thermal Impedance Curve (Figure s). *R Suffix Types Only IRF641 IRF641R , Drain-Source Breakdown Voltage 1RF640/642, IRF640R/642R IRF641 /643, IRF641R /643R Gate Threshold Voltage , Speeds • Linear Transfer Characteristics • High Input Impedance D escription The IRF640, IRF641 , . IRF640R, IRF641R , IRF642R and IRF643R types are advanced power MOSFETs designed, tested, and guaranteed , – 43 022 71 D05 4 03 4 T4D ■HAS IR F 640, 1RF641, IR F642, IR F643 ÎRF640R, IRF641R


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PDF QDS4033 F640/641/642/643 F640R /641R /642R /643R T0-22QAB IRF640, IRF641, IRF642,
irf640

Abstract: IRF240 RF640 IRF 1640 IRF640-643 IRF640 applications note PULSE GENERATOR IRF242 IRF-240 IRF641 IRF642
Text: Requirements • Ease of Paralleling IRF240 IRF241 IRF242 IRF243 TO-220AB IRF640 IRF641 IRF642 IRF643 , 0.22 ft 16 A 10 A IRF640 20a V 0.18 ft 18 A 11 A TO-220AB IRF641 150 V 0.18 ft 18 A 11 A IRF642 , Rating IRF241/243 IRF641 /643 Unit ; Voss Drain to Source Voltage1 200 150 V ' VDGR Drain to Gate


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PDF 34bTti74 IRF240-243/IRF640-643 IRF240 IRF241 IRF242 IRF243 O-220AB IRF640 IRF641 IRF642 RF640 IRF 1640 IRF640-643 IRF640 applications note PULSE GENERATOR IRF-240
equivalent IRF640 FI

Abstract: IRF640 equivalent BUZ 72 A equivalent BUZ34 VN0108N2 irf740 equivalent sony 2sj54 IRF632 IRF540 IRF240
Text: !) ss ota IRF240 ■IRF241 ■IRF242 ■IRF243 IRF640 ■IRF641 ■IRF642 ■IRF643 200V , Ã 18A IRF641 150 TO-220AB IRF642 200 0.220 16A IRF643 150 I ¡fa ABSOLUTE MAXIMUM RATINGS , IRF640, 642 200 V VQS = o, lD = 250^A IRF241, 243 IRF641 , 643 150 vGS(th) Gate Threshold Voltage


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PDF O-220 VN1000D IRF522 VN1000A IRF540 IRF632 IRF640 equivalent IRF640 FI IRF640 equivalent BUZ 72 A equivalent BUZ34 VN0108N2 irf740 equivalent sony 2sj54 IRF240
1RF640

Abstract: IRF640 ge d84en2 f640 TRANSISTOR IRF640 T0220A8
Text: 1RF640/D84EN2 IRF641 /D84EM2 UNITS Drain-Source Voltage VdSS 200 150 Volts Drain-Gate Voltage, Rqs = 1MO , Drain-Source Breakdown Voltage IRF640/D84EN2 (VQS = 0V, lD = 250 (/A) IRF641 /D84EM2 BVdsS 200 150 — â


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PDF IRF640 D64EN2 00A//usec, 1RF640 IRF640 ge d84en2 f640 TRANSISTOR T0220A8
IRF615

Abstract: No abstract text available
Text: POWER MOSFETs TO-220 NCHANNEL BVdss(V) 150.00 (Continued) RDS(onXQ) 2.40 2.40 1.50 1.20 1.20 0.80 0.60 0.60 0.40 0.22 0.22 0.18 2.40 2.40 1.50 1.20 1.20 0.80 0.60 0.60 0.40 0.22 0.22 0.18 3.00 2.00 1.50 1.10 0.68 0.45 0.34 0.28 5.00 3.60 2.50 1.80 1.50 1.00 0.80 0.55 5.00 3.60 2.50 1.80 1.50 1.00 0.80 0.55 Part Number IRL611 IRF613 IRF611 IRL621 IRF623 IRF621 IRL631 IRF633 IRF631 IRL641 IRF643 IRF641 IRL610 IRF612 IRF610 IRL620 IRF622 IRF620 IRL630 IRF632 IRF630 IRL640 IRF642 IRF640 IRF615 IRF614


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PDF O-220 IRL611 IRF613 IRF611 IRL621 IRF623 IRF621 IRL631 IRF633 IRF631 IRF615
IRF 260 N

Abstract: irf 640 IRF640 F640 TT220 IRF641 irf 80 n
Text: SGS-THOMSON ELiOT@KS IRF IRF 640 /FI 641/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF640 IRF640FI IRF641 IRF641FI V dss R D S (on) Id 18 A 10 A 18 A 10 A 200 V 200 V 150 V 150 V 0.18 n 0.18 n 0.18 a 0.18 n . . AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C ISOLATED PACKAGE UL RECOGNIZED, ISOLATION TO 2000V DC , for IR F640/640FI for IRF641 /641 FI V ds = Max Rating V ds = Max Rating x 0 . 8 T c = 1 2 5 °C Min


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PDF 641/FI IRF640 IRF640FI IRF641 IRF641FI O-220 ATT220 640/FI 640/FI-64 IRF 260 N irf 640 F640 TT220 irf 80 n
MTP8N10

Abstract: MTP25N10 MTP20N10 mtp7n06 MTP7N15 MTP5N06 irf510 MTP5N15 MTP12N10 MTPSP10
Text: 0.18 IRF641 18 120 1.3 1.5 MTP3N12 3 50 0.9 2.5 MTP5N12 5 0.7 3.5 MTP7N12 7 75 0.5 4 MTP8N12


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PDF O-220AB 21A-02 IRF613 IRF611 MTP3N15 IRF623 MTP5N15 IRF621 MTP7N15 IRF633 MTP8N10 MTP25N10 MTP20N10 mtp7n06 MTP5N06 irf510 MTP12N10 MTPSP10
1RFP250

Abstract: IRF250 TO-247 THOMSON DISTRIBUTOR IRF631 IRFD311 IRF250 IRFD210 IRF331 irf220 IRF241
Text: - THOMSON/ DISTRIBUTOR SflE D ■=¡021,073 000570b ¿IE m TCSK Power MOSFETs IRF-Series Power MOSFETs — N-Channel (Continued) Maximum Ratings Package bvdss ■ds rDS(ON) (v) (a) ohms TO-204 TO-205 TO-220 TO-247 4-Pin DIP 150 4 1.20 irf223 irf623 4.50 0.60 irff233 5 0.80 irf221 irf621 5.5 0.40 irff231 8 0.60 irf233 irf633 9 0.40 irf231 irf631 16 0.22 irf243 irf643 18 0.18 irf241 irf641 25 0.12 irf253 irfp253 30 0.085 irf251 irfp251 200 0.25 7.50 IRFD2Z2


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PDF 000570b O-204 O-205 O-220 O-247 irf223 irf623 irff233 irf221 irf621 1RFP250 IRF250 TO-247 THOMSON DISTRIBUTOR IRF631 IRFD311 IRF250 IRFD210 IRF331 irf220 IRF241
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