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Part Manufacturer Description Datasheet Download Buy Part
HIP2100EIBT Intersil Corporation 2A HALF BRDG BASED MOSFET DRIVER, PDSO8, PLASTIC, EPSOIC-8
HIP6601BCBZA-T Intersil Corporation Synchronous Rectified Buck MOSFET Drivers; SOIC8; Temp Range: 0° to 70°
ISL6596CRZ-T Intersil Corporation Synchronous Rectified MOSFET Driver; DFN10; Temp Range: See Datasheet
ISL6605CBZ-T Intersil Corporation Synchronous Rectified MOSFET Driver; QFN8, SOIC8; Temp Range: See Datasheet
ISL6609AIBZ-T Intersil Corporation Synchronous Rectified MOSFET Driver; QFN8, SOIC8; Temp Range: See Datasheet
ISL6609CRZ-T Intersil Corporation Synchronous Rectified MOSFET Driver; QFN8, SOIC8; Temp Range: See Datasheet

IRF640 mosfet Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2008 - 200 Amp bridge mosfet

Abstract: circuit using irf640 AD7794 AD7795 07488 irf640 Current source IRF640 applications note AN-968 AD8610ARZ
Text: Figure 5 uses a control loop to set the gate voltage of a MOSFET ( IRF640 N-channel). The circuit in , voltage MOSFET is used, like the IRF640 , which has a 200 V absolute maximum rating, then this circuit , R2 10 D1 10k Figure 5. Current Sink Using IRF640 MOSFET , 1000 mA C D2 1 , replacing the push-pull with a MOSFET and a few other components. EXT +5V 10 2 Q1 R3 10 E , can be used to drive even higher currents by changing only the MOSFET and the sense resistor. Also


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PDF AN-968 AD7794/AD7795 AD7794 AN07488-0-10/08 200 Amp bridge mosfet circuit using irf640 AD7795 07488 irf640 Current source IRF640 applications note AN-968 AD8610ARZ
in4148WS

Abstract: CTX03-16222 BZX399-1V8 MOCD217 GRM1885C1H151JA01B 50-WATT uv phototransistor GRM188R71E104KA01B GRM188R71H152KA01B GRM188R71H222KA01B
Text: cooling methods available. For the Application circuit, based on the above considerations, IRF640 MOSFET , total capacitance at the Vcc pin is charged through MOSFET Q7 and the parallel combination of resistors , the gate drive IC, U8. The MOSFET Q1 therefore starts to switch the input DC voltage across the power , value. For the application circuit, 3 x 0.47uF/100V ceramic caps are used. Primary MOSFET Selection The MAX8540 typically drives an n-channel MOSFET power switch. The maximum drain voltage, maximum RDS


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PDF MAX8540 50-watt, 36-75VDC. 200uH 12pin CTX03-16222 31264R com/an2040 MAX8540: in4148WS CTX03-16222 BZX399-1V8 MOCD217 GRM1885C1H151JA01B 50-WATT uv phototransistor GRM188R71E104KA01B GRM188R71H152KA01B GRM188R71H222KA01B
CTX03-16222

Abstract: IN4148WS BZX399-1V8 GRM188R71H472KA01B zener diode 50w 24V LP2980 APP203 IRF640 C4532X7R2A474M IN4148W
Text: Application circuit, based on the above considerations, IRF640 MOSFET : 200V, 18Amps, RDS(ON) = 0.18 is chosen , MOSFET Q7 and the parallel combination of resistors R30 and R22 from the DC input voltage VIN. When VCC , of gradually increasing duty cycle are applied to the gate drive IC, U8. The MOSFET Q1 starts to , value. For the application circuit, 3 × 0.47µF/100V ceramic caps are used. Primary MOSFET Selection The MAX8541 typically drive an n-channel MOSFET power switch. The maximum drain voltage, maximum RDS


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PDF MAX8541 12pin CTX03-16222 31264R com/an2039 MAX8541: AN2039, APP2039, Appnote2039, CTX03-16222 IN4148WS BZX399-1V8 GRM188R71H472KA01B zener diode 50w 24V LP2980 APP203 IRF640 C4532X7R2A474M IN4148W
RF640

Abstract: irf640 IRF640 applications note IRF641 RF1S640SM9A IRF643 RF643 RF1S640 IRF640 circuit TA17422
Text:  IRF640 , IRF641, IRF642, .e-,conductor ¡RF643, RF1S640, RF1S640SM 16A and 18A, 150V and 200V , BRAND IRF640 TO-220AB IRF640 IRF641 TO-220AB IRF641 IRF642 TO-220AB IRF642 IRF643 TO-220AB IRF643 , 1998 . File Number 1585.4 IRF640 , IRF641, ÌRF642, IRF643, RF1S640, RF1S640SM Absolute Maximum Ratings Tc = 25°c, Unless Otherwise Specified IRF640 , RF1S640, RF1S640SM IRF641 IRF642 IRF643 UNITS , SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage IRF640 , IRF642, RF1S640


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PDF IRF640, IRF641, IRF642, RF643, RF1S640, RF1S640SM TB334 IRF640 O-220AB IRF640 RF640 IRF640 applications note IRF641 RF1S640SM9A IRF643 RF643 RF1S640 IRF640 circuit TA17422
2008 - irf640

Abstract: hexfet irf640 IRF640 circuit
Text: IRF640 , SiHF640 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , G D S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220 IRF640PbF SiHF640-E3 IRF640 SiHF640 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER , apply Document Number: 91036 S-81241-Rev. A, 07-Jul-08 www.vishay.com 1 IRF640 , SiHF640 Vishay , MOSFET symbol showing the integral reverse p - n junction diode D SYMBOL TEST CONDITIONS MIN


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PDF IRF640, SiHF640 O-220 12-Mar-07 irf640 hexfet irf640 IRF640 circuit
1999 - irf640

Abstract: IRF640 P CHANNEL MOSFET IRF640 morocco circuit using irf640 IRF64 power MOSFET IRF640 fp irf640f stmicroelectronics datecode TO-220 0118mm
Text: ® IRF640 IRF640FP N - CHANNEL 200V - 0.150 - 18A TO-220/TO-220FP MESH OVERLAY TM MOSFET TYPE IRF640 IRF640F P s s s s V DSS 200 V 200 V R DS(on) < 0.18 < 0.18 ID 18 A 18 A TYPICAL RDS , 1 2 1 2 3 DESCRIPTION This power MOSFET is designed using he company's consolidated strip , Ts tg Tj Parameter IRF640 Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k ) G , Characterized in this Datasheet (*) Limited only by Maximum Temperature Allowed July 1999 1/9 IRF640


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PDF IRF640 IRF640FP O-220/TO-220FP IRF640F O-220 O-220FP IRF640 P CHANNEL MOSFET IRF640 morocco circuit using irf640 IRF64 power MOSFET IRF640 fp stmicroelectronics datecode TO-220 0118mm
2001 - IRF640 applications note

Abstract: irf640 RF1S640SM9A TA17422 power MOSFET IRF640 RF1S640 RF1S640SM TB334
Text: IRF640 , RF1S640SM Data Sheet June 1999 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs Title , Components to PC Boards" Symbol BRAND IRF640 wer OSTs) uthor 1585.5 Features These are , integrated circuits. File Number TO-220AB RF1S640SM TO-263AB D IRF640 RF1S640 G NOTE , ) er () OCI O frk ©2001 Fairchild Semiconductor Corporation IRF640 , RF1S640SM Rev. A IRF640 , RF1S640SM TC = 25oC, Unless Otherwise Specified Absolute Maximum Ratings IRF640 , RF1S640SM


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PDF IRF640, RF1S640SM TA17422. TB334 IRF640 RF1S640SM IRF640 applications note irf640 RF1S640SM9A TA17422 power MOSFET IRF640 RF1S640 TB334
1999 - power MOSFET IRF640 fp

Abstract: irf640 circuit using irf640 power MOSFET IRF640 IRF640FP for irf640 IRF640 mosfet stmicroelectronics datecode TO-220
Text: IRF640 IRF640FP ® N - CHANNEL 200V - 0.150 - 18A TO-220/TO-220FP MESH OVERLAYTM MOSFET TYPE V DSS R DS(on) ID IRF640 IRF640FP 200 V 200 V < 0.18 < 0.18 18 A 18 A , CAPACITANCES GATE CHARGE MINIMIZED DESCRIPTION This power MOSFET is designed using he company , Symbol Parameter Value IRF640 V DS V DGR V GS Unit IRF640FP Drain-source Voltage (V GS , IRF640 /FP THERMAL DATA TO-220 R thj-case Thermal Resistance Junction-case R thj-amb R thc-sink


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PDF IRF640 IRF640FP O-220/TO-220FP O-220 power MOSFET IRF640 fp irf640 circuit using irf640 power MOSFET IRF640 IRF640FP for irf640 IRF640 mosfet stmicroelectronics datecode TO-220
1998 - irf640

Abstract: IRF640FP IRF640 P CHANNEL MOSFET
Text: IRF640 IRF640FP ® N - CHANNEL 200V - 0.150 - 18A - TO-220/FP MESH OVERLAYTM MOSFET TYPE V DSS s s s s R DS(on) ID 200 V 200 V IRF640 IRF640F P < 0.18 < 0.18 18 , CAPACITANCES GATE CHARGE MINIMIZED DESCRIPTION This power MOSFET is designed using he company , Symbol Parameter Value IRF640 V DS V DGR V GS Un it IRF640F P Drain-source Voltage , December 1998 1/7 IRF640 /FP THERMAL DATA TO-220 R thj -case R thj -amb R thc-sink Tl


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PDF IRF640 IRF640FP O-220/FP IRF640F O-220 irf640 IRF640FP IRF640 P CHANNEL MOSFET
2001 - linear applications of power MOSFET IRF640

Abstract: power MOSFET IRF640 for irf640 IRF640 applications note irf640 IRF640 application note IRF640 field-effect power transistor RF1S640SM9A RF1S640SM TA17422
Text: IRF640 , RF1S640, RF1S640SM Data Sheet January 2002 18A, 200V, 0.180 Ohm, N-Channel Power , to PC Boards" Symbol BRAND IRF640 TO-220AB RF1S640 TO-262AA RF1S640 RF1S640SM TO-263AB D IRF640 RF1S640 G NOTE: When ordering, use the entire part number. Add the , DRAIN GATE IRF640 , RF1S640, RF1S640SM Rev. B IRF640 , RF1S640, RF1S640SM TC = 25oC, Unless , Tpkg IRF640 , RF1S640, RF1S640SM 200 200 18 11 72 ±20 125 1.0 580 -55 to 150 UNITS V V


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PDF IRF640, RF1S640, RF1S640SM TA17422. linear applications of power MOSFET IRF640 power MOSFET IRF640 for irf640 IRF640 applications note irf640 IRF640 application note IRF640 field-effect power transistor RF1S640SM9A RF1S640SM TA17422
1999 - IRF640 applications note

Abstract: irf640 RF1S640SM9A TB334 TA17422 RF1S640 RF1S640SM IRF640 INTERSIL
Text: IRF640 , RF1S640SM Data Sheet 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs These are , Components to PC Boards" Symbol BRAND IRF640 TO-220AB RF1S640SM TO-263AB D IRF640 , ://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 IRF640 , RF1S640SM TC = 25oC, Unless Otherwise Specified Absolute Maximum Ratings IRF640 , RF1S640SM 200 200 18 11 72 ±20 125 1.0 , , MOSFET Switching Times are Essentially Independent of Operating Temperature tf Total Gate Charge


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PDF IRF640, RF1S640SM TA17422. IRF640 applications note irf640 RF1S640SM9A TB334 TA17422 RF1S640 RF1S640SM IRF640 INTERSIL
1997 - IRF640 applications note

Abstract: IRF640 irf6401 IRF641 IRF643 harris IRF642 RF1S640SM9A TB334 RF1S640SM IRF643
Text: IRF640 , IRF641, IRF642, IRF643, RF1S640, RF1S640SM S E M I C O N D U C T O R 16A and 18A , Ordering Information PART NUMBER PACKAGE D BRAND IRF640 TO-220AB IRF640 IRF641 TO , 5-1 File Number 1585.3 IRF640 , IRF641, IRF642, IRF643, RF1S640, RF1S640SM TC = 25oC, Unless , . . . . . . . . . . . . . . . Tpkg IRF640 , RF1S640, RF1S640SM 200 200 18 11 72 ±20 125 , PARAMETER MIN TYP MAX UNITS IRF640 , IRF642, RF1S640, RF1S640SM 200 - - V


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PDF IRF640, IRF641, IRF642, IRF643, RF1S640, RF1S640SM IRF640 applications note IRF640 irf6401 IRF641 IRF643 harris IRF642 RF1S640SM9A TB334 RF1S640SM IRF643
2009 - IRF640PBF

Abstract: IRF640 SiHF640 linear applications of power MOSFET IRF640 irf640 Vishay SiHF640-E3
Text: IRF640 , SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) · , MOSFET ORDERING INFORMATION TO-220 IRF640PbF SiHF640-E3 IRF640 SiHF640 Package Lead (Pb)-free , -Jul-08 www.vishay.com 1 IRF640 , SiHF640 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP , Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral , -81241-Rev. A, 07-Jul-08 IRF640 , SiHF640 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise


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PDF IRF640, SiHF640 O-220 O-220 50lectual 18-Jul-08 IRF640PBF IRF640 linear applications of power MOSFET IRF640 irf640 Vishay SiHF640-E3
2006 - IRF640

Abstract: IRF640FP ST IRF640 IRF640 circuit JESD97 power MOSFET IRF640 fp IRF640 morocco
Text: IRF640 IRF640FP N-channel 200V - 0.15 - 18A TO-220/TO-220FP Mesh overlayTM Power MOSFET General features Type VDSS RDS(on) ID IRF640 200V <0.18 18A IRF640FP 200V <0.18 , minimized 3 1 TO-220 3 2 1 2 TO-220FP Description This power MOSFET is designed , Package Packaging IRF640 IRF640 TO-220 Tube IRF640FP IRF640FP TO-220FP Tube September 2006 Rev 9 1/14 www.st.com 14 Contents IRF640 - IRF640FP Contents 1


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PDF IRF640 IRF640FP O-220/TO-220FP O-220 O-220FP IRF640 IRF640FP ST IRF640 IRF640 circuit JESD97 power MOSFET IRF640 fp IRF640 morocco
2006 - IRF640

Abstract: IRF640 applications note circuit using irf640 power MOSFET IRF640 IRF640FP IRF640 mosfet JESD97
Text: IRF640 IRF640FP N-channel 200V - 0.15 - 18A TO-220/TO-220FP Mesh overlayTM Power MOSFET General features Type VDSS RDS(on) ID IRF640 200V <0.18 18A IRF640FP 200V <0.18 , minimized 3 1 3 2 1 TO-220 TO-220FP Description This power MOSFET is designed using , Packaging IRF640 IRF640 TO-220 Tube IRF640FP IRF640FP TO-220FP Tube September 2006 Rev 9 1/14 www.st.com 14 Contents IRF640 - IRF640FP Contents 1 Electrical


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PDF IRF640 IRF640FP O-220/TO-220FP O-220 O-220FP IRF640 IRF640 applications note circuit using irf640 power MOSFET IRF640 IRF640FP IRF640 mosfet JESD97
IRF640 applications note

Abstract: IRF640 circuit
Text: IRF640 , SiHF640 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , throughout the industry. TO-220AB G G D S S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220AB IRF640PbF SiHF640-E3 IRF640 SiHF640 ABSOLUTE MAXIMUM RATINGS (TC = 25 , DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF640 , SiHF640 , MOSFET symbol showing the integral reverse p - n junction diode D SYMBOL TEST CONDITIONS MIN


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PDF IRF640, SiHF640 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRF640 applications note IRF640 circuit
1999 - irf640

Abstract: IRF640 P CHANNEL MOSFET IRF P CHANNEL MOSFET TO-220 P Channel Power MOSFET IRF IRF640 morocco IRF640 circuit DI L6 IRF640FP power MOSFET IRF640 fp IRF n CHANNEL MOSFET
Text: IRF640 IRF640FP ® N - CHANNEL 200V - 0.150 - 18A TO-220/TO-220FP MESH OVERLAYTM MOSFET TYPE V DSS s s s s R DS(on) ID 200 V 200 V IRF640 IRF640FP < 0.18 < 0.18 , CAPACITANCES GATE CHARGE MINIMIZED DESCRIPTION This power MOSFET is designed using he company , Symbol Parameter Value IRF640 V DS V DGR V GS Un it IRF 640F P Drain-source Voltage (V , 1/9 IRF640 /FP THERMAL DATA TO-220 R thj -case Thermal Resistance Junction-case R thj


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PDF IRF640 IRF640FP O-220/TO-220FP O-220 irf640 IRF640 P CHANNEL MOSFET IRF P CHANNEL MOSFET TO-220 P Channel Power MOSFET IRF IRF640 morocco IRF640 circuit DI L6 IRF640FP power MOSFET IRF640 fp IRF n CHANNEL MOSFET
IRFG43

Abstract: motor driver IRF640
Text: Product Summary Part Number bvdss R DS(on) IRF640 200V 0 .1 8 0 18A IRF641 150V , -2 5 3 !d IRF640 , 1RF641, IRF642, IRF643 Devices HE D | 4flSS4S5 OOaaSQS Q I , Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance © Type Min. IRF640 IRF642 IRF641 IRF643 IRF640 IRF641 200 Typ. Max. V Q VGS - 10V, l0 >10A A - , 0.22 IRF640 IRF641 18 IRF642 IRF643 On-State Drain Current © Vq s - OV, lD = 250mA


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PDF IRFS40 IRFG41 IRF642 IRFG43 T0-220AB IRF640 IRF641 IRF643 C-259 IRFG43 motor driver IRF640
2012 - IRF640 applications note

Abstract: IRF640 circuit IRF640 n-channel MOSFET
Text: IRF640 , SiHF640 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , throughout the industry. TO-220AB G G D S S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220AB IRF640PbF SiHF640-E3 IRF640 SiHF640 ABSOLUTE MAXIMUM RATINGS (TC = 25 , DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF640 , SiHF640 , MOSFET symbol showing the integral reverse p - n junction diode D SYMBOL TEST CONDITIONS MIN


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PDF IRF640, SiHF640 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRF640 applications note IRF640 circuit IRF640 n-channel MOSFET
IRF640

Abstract: SiHF640 SiHF640-E3 linear applications of power MOSFET IRF640 IRF640 applications note IRF640 application note
Text: IRF640 , SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) · , S N-Channel MOSFET ORDERING INFORMATION TO-220AB IRF640PbF SiHF640-E3 IRF640 SiHF640 , DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF640 , SiHF640 , ton MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = , FORTH AT www.vishay.com/doc?91000 IRF640 , SiHF640 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C


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PDF IRF640, SiHF640 2002/95/EC O-220AB O-220AB 11-Mar-11 IRF640 SiHF640-E3 linear applications of power MOSFET IRF640 IRF640 applications note IRF640 application note
1999 - IRF640

Abstract: IRF640FP IRF64 IRF640 P CHANNEL MOSFET IRF640 morocco
Text: IRF640 IRF640FP ® N - CHANNEL 200V - 0.150 - 18A - TO-220/FP MESH OVERLAYTM MOSFET TYPE V DSS s s s s R DS(on) ID 200 V 200 V IRF640 IRF640F P < 0.18 < 0.18 18 , CAPACITANCES GATE CHARGE MINIMIZED DESCRIPTION This power MOSFET is designed using he company , Symbol Parameter Value IRF640 V DS V DGR V GS Un it IRF640F P Drain-source Voltage , February 1999 1/7 IRF640 /FP THERMAL DATA TO-220 R thj -case R thj -amb R thc-sink Tl


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PDF IRF640 IRF640FP O-220/FP IRF640F O-220 IRF640 IRF640FP IRF64 IRF640 P CHANNEL MOSFET IRF640 morocco
irf640

Abstract: hexfet irf640 power MOSFET IRF640 80 watt
Text: International gjg Rectifier HEXFET® Power MOSFET • Dynamic dv/dt Rating • Repetitive , -9.374G IRF640 Vdss=200V RDS(on) = 0.18Q lD = 18A Description Third Generation HEXFETs from International , 215 IRF640 _ Electrical Characteristics @ Tj = 25°C (unless otherwise specified) IOR Parameter , Current (Body Diode) - — 18 A MOSFET symbol _iD showing the A I—1\ integral reverse GAJ pT/ p-n , I«R Vds> Drain-to-Source Voltage (volts) Fig 1. Typical Output Characteristics, Tc=25°C IRF640 Q


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PDF IRF640 O-220 irf640 hexfet irf640 power MOSFET IRF640 80 watt
2011 - Not Available

Abstract: No abstract text available
Text: IRF640 , SiHF640 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , throughout the industry. TO-220AB G G D S S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220AB IRF640PbF SiHF640-E3 IRF640 SiHF640 ABSOLUTE MAXIMUM RATINGS (TC = 25 , DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF640 , SiHF640 , MOSFET symbol showing the integral reverse p - n junction diode D SYMBOL TEST CONDITIONS MIN


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PDF IRF640, SiHF640 2002/95/EC O-220AB 11-Mar-11
MTM13N50E

Abstract: P40N10 p50n05 8n50e 24N40 motorola 20n50e Power MOSFET Cross Reference Guide TP50N05E IRF510 mosfet irf640 33N10E
Text: MOSFET SELECTOR GUIDE & CROSS REFERENCE MOTOROLA 39 Industry Part Number IRF513 IRF520 IRF521 , IRF621 IRF622 IRF623 IRF630 IRF631 IRF632 IRF633 IRF640 IRF641 IRF642 IRF643 IRF710 IRF711 IRF712 IRF713 , IRF630 IRF630 IRF640 IRF640 IRF640 IRF640 IRF710 IRF710 IRF710 IRF710 IRF720 IRF720 IRF720 IRF720 IRF730 , MTP2955 MOTOROLA 40 TMOS POWER MOSFET SELECTOR GUIDE & CROSS REFERENCE Industry Part Number , MTD10N05E1 M TD5N10-1 M TD5N10-1 MTD9N10E1 MTD9N10E1 TMOS POWER MOSFET SELECTOR GUIDE & CROSS REFERENCE


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PDF BUZ10 BUZ11 BUZ11A BUZ11S2 BUZ15 BUZ171 BUZ20 BUZ21 BUZ23 BUZ31 MTM13N50E P40N10 p50n05 8n50e 24N40 motorola 20n50e Power MOSFET Cross Reference Guide TP50N05E IRF510 mosfet irf640 33N10E
Not Available

Abstract: No abstract text available
Text: IRF640 IRF640FP N - CHANNEL 200V - 0.150« - 18A TO-220/TO-220FP MESH OVERLAY™ MOSFET TYPE , INTRINSIC CAPACITANCES . GATE CHARGE MINIMIZED DESCRIPTION This power MOSFET is designed using he , s s , T j < T jm a x 1/9 IRF640 /FP THERMAL DATA TO -220 R e s is ta n c e J u n c tio , o n d u c ta n c e IRF640 /FP ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Sym bol td , -220FP 3/9 IRF640 /FP Thermal Impedance for TO-220 Thermal Impedance forTO-220FP G C 2D 930


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PDF IRF640 IRF640FP O-220/TO-220FP IRF640/FP O-22QFP
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