The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
KGF20N05D Intersil Corporation N-Channel 5.5V Dual Power MOSFET
KGF16N05D-400 Intersil Corporation N-Channel 5.5V Dual Power MOSFET
EL7104CSZ-T7 Intersil Corporation High Speed, Single Channel, Power MOSFET Driver; PDIP8, SOIC8; Temp Range: -40° to 85°C
EL7202CSZ-T13 Intersil Corporation High Speed, Dual Channel Power MOSFET Drivers; SOIC8; Temp Range: -40° to 85°C
HIP6602BCBZ Intersil Corporation Dual Channel Synchronous Rectified Buck MOSFET Driver; QFN16, SOIC14; Temp Range: 0° to 70°
EL7212CNZ Intersil Corporation High Speed, Dual Channel Power MOSFET Drivers; PDIP8, SOIC8; Temp Range: -40° to 85°C

IRF640 P CHANNEL MOSFET Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1999 - irf640

Abstract: IRF640 P CHANNEL MOSFET IRF640 morocco circuit using irf640 IRF64 power MOSFET IRF640 fp irf640f stmicroelectronics datecode TO-220 0118mm
Text: ® IRF640 IRF640FP N - CHANNEL 200V - 0.150 - 18A TO-220/TO-220FP MESH OVERLAY TM MOSFET TYPE IRF640 IRF640F P s s s s V DSS 200 V 200 V R DS(on) < 0.18 < 0.18 ID 18 A 18 A TYPICAL RDS , 1 2 1 2 3 DESCRIPTION This power MOSFET is designed using he company's consolidated strip , SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID I DM ( · ) P tot dv/dt( 1) V ISO Ts tg Tj Parameter IRF640 Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k ) G


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PDF IRF640 IRF640FP O-220/TO-220FP IRF640F O-220 O-220FP IRF640 P CHANNEL MOSFET IRF640 morocco circuit using irf640 IRF64 power MOSFET IRF640 fp stmicroelectronics datecode TO-220 0118mm
1998 - irf640

Abstract: IRF640FP IRF640 P CHANNEL MOSFET
Text: IRF640 IRF640FP ® N - CHANNEL 200V - 0.150 - 18A - TO-220/FP MESH OVERLAYTM MOSFET TYPE V DSS s s s s R DS(on) ID 200 V 200 V IRF640 IRF640F P < 0.18 < 0.18 18 , Symbol Parameter Value IRF640 V DS V DGR V GS Un it IRF640F P Drain-source Voltage , CAPACITANCES GATE CHARGE MINIMIZED DESCRIPTION This power MOSFET is designed using he company , ID Drain Current (continuous) at Tc = 25 o C ID o V P tot dv/dt( 1) 18


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PDF IRF640 IRF640FP O-220/FP IRF640F O-220 irf640 IRF640FP IRF640 P CHANNEL MOSFET
1999 - power MOSFET IRF640 fp

Abstract: irf640 circuit using irf640 power MOSFET IRF640 IRF640FP for irf640 IRF640 mosfet stmicroelectronics datecode TO-220
Text: IRF640 IRF640FP ® N - CHANNEL 200V - 0.150 - 18A TO-220/TO-220FP MESH OVERLAYTM MOSFET TYPE V DSS R DS(on) ID IRF640 IRF640FP 200 V 200 V < 0.18 < 0.18 18 A 18 A , CAPACITANCES GATE CHARGE MINIMIZED DESCRIPTION This power MOSFET is designed using he company , Symbol Parameter Value IRF640 V DS V DGR V GS Unit IRF640FP Drain-source Voltage (V GS , Total Dissipation at T c = 25 o C 125 40 W Derating Factor P tot Drain Current (pulsed


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PDF IRF640 IRF640FP O-220/TO-220FP O-220 power MOSFET IRF640 fp irf640 circuit using irf640 power MOSFET IRF640 IRF640FP for irf640 IRF640 mosfet stmicroelectronics datecode TO-220
1999 - irf640

Abstract: IRF640 P CHANNEL MOSFET IRF P CHANNEL MOSFET TO-220 P Channel Power MOSFET IRF IRF640 morocco IRF640 circuit DI L6 IRF640FP power MOSFET IRF640 fp IRF n CHANNEL MOSFET
Text: IRF640 IRF640FP ® N - CHANNEL 200V - 0.150 - 18A TO-220/TO-220FP MESH OVERLAYTM MOSFET TYPE V DSS s s s s R DS(on) ID 200 V 200 V IRF640 IRF640FP < 0.18 < 0.18 , Symbol Parameter Value IRF640 V DS V DGR V GS Un it IRF 640F P Drain-source Voltage (V , CAPACITANCES GATE CHARGE MINIMIZED DESCRIPTION This power MOSFET is designed using he company , (pulsed) 72 72 A T otal Dissipation at T c = 25 oC 125 40 W Derating Factor P


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PDF IRF640 IRF640FP O-220/TO-220FP O-220 irf640 IRF640 P CHANNEL MOSFET IRF P CHANNEL MOSFET TO-220 P Channel Power MOSFET IRF IRF640 morocco IRF640 circuit DI L6 IRF640FP power MOSFET IRF640 fp IRF n CHANNEL MOSFET
1999 - IRF640

Abstract: IRF640FP IRF64 IRF640 P CHANNEL MOSFET IRF640 morocco
Text: IRF640 IRF640FP ® N - CHANNEL 200V - 0.150 - 18A - TO-220/FP MESH OVERLAYTM MOSFET TYPE V DSS s s s s R DS(on) ID 200 V 200 V IRF640 IRF640F P < 0.18 < 0.18 18 , Symbol Parameter Value IRF640 V DS V DGR V GS Un it IRF640F P Drain-source Voltage , CAPACITANCES GATE CHARGE MINIMIZED DESCRIPTION This power MOSFET is designed using he company , ID Drain Current (continuous) at Tc = 25 o C ID o V P tot dv/dt( 1) 18


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PDF IRF640 IRF640FP O-220/FP IRF640F O-220 IRF640 IRF640FP IRF64 IRF640 P CHANNEL MOSFET IRF640 morocco
Not Available

Abstract: No abstract text available
Text: IRF640 IRF640FP N - CHANNEL 200V - 0.150« - 18A TO-220/TO-220FP MESH OVERLAY™ MOSFET TYPE V IR F 6 4 0 IR F 6 4 0 F P dss 200 V 200 V R D S (o n ) Id < 0.1 8 Q. < 0.1 8 , INTRINSIC CAPACITANCES . GATE CHARGE MINIMIZED DESCRIPTION This power MOSFET is designed using he , to r I DM (•) 1.0 0.32 W /°C 5 5 V /ns — 2000 V P ea k D iode R e co ve ry v o lta g e s lo p e V iso In s u la tio n W ith s ta n d V o lta g e (DC ) Tstg


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PDF IRF640 IRF640FP O-220/TO-220FP IRF640/FP O-22QFP
2008 - irf640

Abstract: hexfet irf640 IRF640 circuit
Text: IRF640 , SiHF640 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , MOSFET symbol showing the integral reverse p - n junction diode D SYMBOL TEST CONDITIONS MIN , G D S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220 IRF640PbF SiHF640-E3 IRF640 SiHF640 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER , apply Document Number: 91036 S-81241-Rev. A, 07-Jul-08 www.vishay.com 1 IRF640 , SiHF640 Vishay


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PDF IRF640, SiHF640 O-220 12-Mar-07 irf640 hexfet irf640 IRF640 circuit
2006 - IRF640

Abstract: IRF640 applications note circuit using irf640 power MOSFET IRF640 IRF640FP IRF640 mosfet JESD97
Text: IRF640 IRF640FP N-channel 200V - 0.15 - 18A TO-220/TO-220FP Mesh overlayTM Power MOSFET General , so Ob - ro P s) t( IRF640 - IRF640FP 1 Electrical ratings Electrical ratings , let o bs O 6/14 so Ob Figure 6. ro P Transfer characteristics s) t( IRF640 , Ob - ro P s) t( IRF640 - IRF640FP 3 Test circuit Test circuit Figure 14 , - ro P s) t( IRF640 - IRF640FP Package mechanical data TO-220 MECHANICAL DATA mm


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PDF IRF640 IRF640FP O-220/TO-220FP O-220 O-220FP IRF640 IRF640 applications note circuit using irf640 power MOSFET IRF640 IRF640FP IRF640 mosfet JESD97
RF640

Abstract: irf640 IRF640 applications note IRF641 RF1S640SM9A IRF643 RF643 RF1S640 IRF640 circuit TA17422
Text:  IRF640 , IRF641, IRF642, .e-,conductor ¡RF643, RF1S640, RF1S640SM 16A and 18A, 150V and 200V , BRAND IRF640 TO-220AB IRF640 IRF641 TO-220AB IRF641 IRF642 TO-220AB IRF642 IRF643 TO-220AB IRF643 , 1998 . File Number 1585.4 IRF640 , IRF641, ÌRF642, IRF643, RF1S640, RF1S640SM Absolute Maximum Ratings Tc = 25°c, Unless Otherwise Specified IRF640 , RF1S640, RF1S640SM IRF641 IRF642 IRF643 UNITS , SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage IRF640 , IRF642, RF1S640


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PDF IRF640, IRF641, IRF642, RF643, RF1S640, RF1S640SM TB334 IRF640 O-220AB IRF640 RF640 IRF640 applications note IRF641 RF1S640SM9A IRF643 RF643 RF1S640 IRF640 circuit TA17422
1999 - IRF640 applications note

Abstract: irf640 RF1S640SM9A TB334 TA17422 RF1S640 RF1S640SM IRF640 INTERSIL
Text: IRF640 , RF1S640SM Data Sheet 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs These are , Components to PC Boards" Symbol BRAND IRF640 TO-220AB RF1S640SM TO-263AB D IRF640 , ://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 IRF640 , RF1S640SM TC = 25oC, Unless Otherwise Specified Absolute Maximum Ratings IRF640 , RF1S640SM 200 200 18 11 72 ±20 125 1.0 , , MOSFET Switching Times are Essentially Independent of Operating Temperature tf Total Gate Charge


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PDF IRF640, RF1S640SM TA17422. IRF640 applications note irf640 RF1S640SM9A TB334 TA17422 RF1S640 RF1S640SM IRF640 INTERSIL
2009 - IRF640PBF

Abstract: IRF640 SiHF640 linear applications of power MOSFET IRF640 irf640 Vishay SiHF640-E3
Text: IRF640 , SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) · , MOSFET ORDERING INFORMATION TO-220 IRF640PbF SiHF640-E3 IRF640 SiHF640 Package Lead (Pb)-free , -Jul-08 www.vishay.com 1 IRF640 , SiHF640 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP , Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IS = 18 A, VGS = 0 Vb TJ = 25 °C, IF =


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PDF IRF640, SiHF640 O-220 O-220 50lectual 18-Jul-08 IRF640PBF IRF640 linear applications of power MOSFET IRF640 irf640 Vishay SiHF640-E3
IRFG43

Abstract: motor driver IRF640
Text: Product Summary Part Number bvdss R DS(on) IRF640 200V 0 .1 8 0 18A IRF641 150V , -2 5 3 !d IRF640 , 1RF641, IRF642, IRF643 Devices HE D | 4flSS4S5 OOaaSQS Q I , Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance © Type Min. IRF640 IRF642 IRF641 IRF643 IRF640 IRF641 200 Typ. Max. V Q VGS - 10V, l0 >10A A - , 0.22 IRF640 IRF641 18 IRF642 IRF643 On-State Drain Current © Vq s - OV, lD = 250mA


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PDF IRFS40 IRFG41 IRF642 IRFG43 T0-220AB IRF640 IRF641 IRF643 C-259 IRFG43 motor driver IRF640
IRF640 applications note

Abstract: IRF640 circuit
Text: IRF640 , SiHF640 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , MOSFET symbol showing the integral reverse p - n junction diode D SYMBOL TEST CONDITIONS MIN , throughout the industry. TO-220AB G G D S S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220AB IRF640PbF SiHF640-E3 IRF640 SiHF640 ABSOLUTE MAXIMUM RATINGS (TC = 25 , DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF640 , SiHF640


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PDF IRF640, SiHF640 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRF640 applications note IRF640 circuit
2012 - IRF640 applications note

Abstract: IRF640 circuit IRF640 n-channel MOSFET
Text: IRF640 , SiHF640 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , MOSFET symbol showing the integral reverse p - n junction diode D SYMBOL TEST CONDITIONS MIN , throughout the industry. TO-220AB G G D S S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220AB IRF640PbF SiHF640-E3 IRF640 SiHF640 ABSOLUTE MAXIMUM RATINGS (TC = 25 , DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF640 , SiHF640


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PDF IRF640, SiHF640 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRF640 applications note IRF640 circuit IRF640 n-channel MOSFET
IRF640

Abstract: SiHF640 SiHF640-E3 linear applications of power MOSFET IRF640 IRF640 applications note IRF640 application note
Text: IRF640 , SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) · , S N-Channel MOSFET ORDERING INFORMATION TO-220AB IRF640PbF SiHF640-E3 IRF640 SiHF640 , ton MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = , DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF640 , SiHF640 , FORTH AT www.vishay.com/doc?91000 IRF640 , SiHF640 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C


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PDF IRF640, SiHF640 2002/95/EC O-220AB O-220AB 11-Mar-11 IRF640 SiHF640-E3 linear applications of power MOSFET IRF640 IRF640 applications note IRF640 application note
MTM13N50E

Abstract: P40N10 p50n05 8n50e 24N40 motorola 20n50e Power MOSFET Cross Reference Guide TP50N05E IRF510 mosfet irf640 33N10E
Text: s a re re q u ir e d to m e e t I q (A m p e r e ) ra tin g MOTOROLA 42 TMOS POWER MOSFET , Cross-Reference The follow ing table represents a cro ss-re fe re n ce guide for all T M O S P ow er M O SFETs , MOSFET SELECTOR GUIDE & CROSS REFERENCE MOTOROLA 39 Industry Part Number IRF513 IRF520 IRF521 , IRF621 IRF622 IRF623 IRF630 IRF631 IRF632 IRF633 IRF640 IRF641 IRF642 IRF643 IRF710 IRF711 IRF712 IRF713 , IRF630 IRF630 IRF640 IRF640 IRF640 IRF640 IRF710 IRF710 IRF710 IRF710 IRF720 IRF720 IRF720 IRF720 IRF730


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PDF BUZ10 BUZ11 BUZ11A BUZ11S2 BUZ15 BUZ171 BUZ20 BUZ21 BUZ23 BUZ31 MTM13N50E P40N10 p50n05 8n50e 24N40 motorola 20n50e Power MOSFET Cross Reference Guide TP50N05E IRF510 mosfet irf640 33N10E
2001 - IRF640 applications note

Abstract: irf640 RF1S640SM9A TA17422 power MOSFET IRF640 RF1S640 RF1S640SM TB334
Text: IRF640 , RF1S640SM Data Sheet June 1999 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs Title , Components to PC Boards" Symbol BRAND IRF640 wer OSTs) uthor 1585.5 Features These are , integrated circuits. File Number TO-220AB RF1S640SM TO-263AB D IRF640 RF1S640 G NOTE , ) er () OCI O frk ©2001 Fairchild Semiconductor Corporation IRF640 , RF1S640SM Rev. A IRF640 , RF1S640SM TC = 25oC, Unless Otherwise Specified Absolute Maximum Ratings IRF640 , RF1S640SM


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PDF IRF640, RF1S640SM TA17422. TB334 IRF640 RF1S640SM IRF640 applications note irf640 RF1S640SM9A TA17422 power MOSFET IRF640 RF1S640 TB334
1996 - IRF640

Abstract: IRF640FI IRF640 morocco
Text: IRF640 IRF640FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS s s s s R DS( on) ID 200 V 200 V IRF640 IRF640FI < 0.18 < 0.18 18 A 10 A TYPICAL RDS , DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value IRF640 VD S V DG R V GS Unit , ) T stg Storage Temperature ID M(·) P tot Tj Drain Current (cont.) at Tc = 100 C Max , limited by safe operating area November 1996 1/9 IRF640 /FI THERMAL DATA TO-220 R thj-cas e


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PDF IRF640 IRF640FI 100oC O-220 ISOWATT220 IRF640 IRF640FI IRF640 morocco
irf640

Abstract: hexfet irf640 power MOSFET IRF640 80 watt
Text: International gjg Rectifier HEXFET® Power MOSFET • Dynamic dv/dt Rating • Repetitive , -9.374G IRF640 Vdss=200V RDS(on) = 0.18Q lD = 18A Description Third Generation HEXFETs from International , 215 IRF640 _ Electrical Characteristics @ Tj = 25°C (unless otherwise specified) IOR Parameter , Inductance - 4.5 - nH Between lead, p 6 mm (0.25in.) /fC$\ from package JJ 5jtj and center of die contact s , Current (Body Diode) - — 18 A MOSFET symbol _iD showing the A I—1\ integral reverse GAJ pT/ p-n


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PDF IRF640 O-220 irf640 hexfet irf640 power MOSFET IRF640 80 watt
2001 - linear applications of power MOSFET IRF640

Abstract: power MOSFET IRF640 for irf640 IRF640 applications note irf640 IRF640 application note IRF640 field-effect power transistor RF1S640SM9A RF1S640SM TA17422
Text: IRF640 , RF1S640, RF1S640SM Data Sheet January 2002 18A, 200V, 0.180 Ohm, N-Channel Power , to PC Boards" Symbol BRAND IRF640 TO-220AB RF1S640 TO-262AA RF1S640 RF1S640SM TO-263AB D IRF640 RF1S640 G NOTE: When ordering, use the entire part number. Add the , DRAIN GATE IRF640 , RF1S640, RF1S640SM Rev. B IRF640 , RF1S640, RF1S640SM TC = 25oC, Unless , Tpkg IRF640 , RF1S640, RF1S640SM 200 200 18 11 72 ±20 125 1.0 580 -55 to 150 UNITS V V


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PDF IRF640, RF1S640, RF1S640SM TA17422. linear applications of power MOSFET IRF640 power MOSFET IRF640 for irf640 IRF640 applications note irf640 IRF640 application note IRF640 field-effect power transistor RF1S640SM9A RF1S640SM TA17422
2011 - Not Available

Abstract: No abstract text available
Text: IRF640 , SiHF640 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , MOSFET symbol showing the integral reverse p - n junction diode D SYMBOL TEST CONDITIONS MIN , throughout the industry. TO-220AB G G D S S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220AB IRF640PbF SiHF640-E3 IRF640 SiHF640 ABSOLUTE MAXIMUM RATINGS (TC = 25 , DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF640 , SiHF640


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PDF IRF640, SiHF640 2002/95/EC O-220AB 11-Mar-11
1994 - IRF640 morocco

Abstract: irf640 IRF640 applications note IRF640FI schematic diagram UPS equivalent IRF640 FI schematic diagram UPS 600 Power free
Text: IRF640 IRF640FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF640 IRF640FI s s , ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value IRF640 VD S V DG R V GS Unit IRF640FI , Derating Factor 1 0.32 W/ o C Insulation Withstand Voltage (DC) 2000 ID M(·) P tot , operating area July 1993 1/6 IRF640 /FI THERMAL DATA TO-220 R thj-cas e Rthj- amb R th c-s Tl , . 6.5 13 1600 270 50 Max. Unit S 2100 350 70 pF pF pF IRF640 /FI ELECTRICAL


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PDF IRF640 IRF640FI 100oC O-220 ISOWATT220 IRF640 morocco irf640 IRF640 applications note IRF640FI schematic diagram UPS equivalent IRF640 FI schematic diagram UPS 600 Power free
1997 - IRF640 applications note

Abstract: IRF640 irf6401 IRF641 IRF643 harris IRF642 RF1S640SM9A TB334 RF1S640SM IRF643
Text: IRF640 , IRF641, IRF642, IRF643, RF1S640, RF1S640SM S E M I C O N D U C T O R 16A and 18A , Ordering Information PART NUMBER PACKAGE D BRAND IRF640 TO-220AB IRF640 IRF641 TO , 5-1 File Number 1585.3 IRF640 , IRF641, IRF642, IRF643, RF1S640, RF1S640SM TC = 25oC, Unless , . . . . . . . . . . . . . . . Tpkg IRF640 , RF1S640, RF1S640SM 200 200 18 11 72 ±20 125 , PARAMETER MIN TYP MAX UNITS IRF640 , IRF642, RF1S640, RF1S640SM 200 - - V


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PDF IRF640, IRF641, IRF642, IRF643, RF1S640, RF1S640SM IRF640 applications note IRF640 irf6401 IRF641 IRF643 harris IRF642 RF1S640SM9A TB334 RF1S640SM IRF643
Not Available

Abstract: No abstract text available
Text: IRF640 , SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) â , Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G , D COMPLIANT S S N-Channel MOSFET ORDERING INFORMATION TO-220AB IRF640PbF SiHF640-E3 IRF640 SiHF640 Package Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless , DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF640 , SiHF640 Vishay Siliconix THERMAL RESISTANCE


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PDF IRF640, SiHF640 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A
2013 - Not Available

Abstract: No abstract text available
Text: IRF640 , SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) â , Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G , D COMPLIANT S S N-Channel MOSFET ORDERING INFORMATION TO-220AB IRF640PbF SiHF640-E3 IRF640 SiHF640 Package Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless , DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF640 , SiHF640 Vishay Siliconix THERMAL RESISTANCE


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PDF IRF640, SiHF640 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A
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