The Datasheet Archive

IRF622 datasheet (26)

Part Manufacturer Description Type PDF
IRF622 Fairchild Semiconductor N-Channel Power MOSFETs, 7A, 150-200V Scan PDF
IRF622 FCI POWER MOSFETs Scan PDF
IRF622 Frederick Components Power MOSFET Selection Guide Scan PDF
IRF622 General Electric Power Transistor Data Book 1985 Scan PDF
IRF622 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 4.0A. Scan PDF
IRF622 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
IRF622 International Rectifier TO-220 N-Channel HEXFET Power MOSFET Scan PDF
IRF622 Motorola European Master Selection Guide 1986 Scan PDF
IRF622 Others Shortform Datasheet & Cross References Data Scan PDF
IRF622 Others Shortform Transistor PDF Datasheet Scan PDF
IRF622 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
IRF622 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
IRF622 Others Semiconductor Master Cross Reference Guide Scan PDF
IRF622 Others Semiconductor Master Cross Reference Guide Scan PDF
IRF622 Others FET Data Book Scan PDF
IRF622 National Semiconductor N-Channel Power MOSFETs Scan PDF
IRF622 Siliconix MOSPOWER Design Data Book 1983 Scan PDF
IRF622 STMicroelectronics N-Channel Enhancement Mode Power MOS Transistor Scan PDF
IRF622 STMicroelectronics Shortform Data Book 1988 Scan PDF
IRF622 Vishay Siliconix Shortform Siliconix Datasheet Scan PDF

IRF622 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
irf620

Abstract: IRF620 HARRIS IFR622 1RF621 irf623 irf622
Text: h a r r is January 1998 IRF620, IRF621, IRF622 , IRF623 4.0A and 5.0A, 150V and 200V, 0.8 and , IRF621 IRF622 IRF623 PACKAGE T 0-2 2 0 A B T 0-2 2 0 A B T 0-2 2 0 A B TO-22QAB BRAND IRF620 IRF621 IRF622 IRF623 NOTE: When ordering, use the entire part number. Packaging JEDEC T 0-220A B SOURCE , Procedures. Copyright © Harris Corporation 1997 , File Number 1577 2 IRF620,1RF621 IRF622 , IRF623 , 0.32 85 -55 to 150 300 260 IRF621 150 150 5.0 3.0 20 ±20 40 0.32 85 -55 to 150 300 260 IRF622 200 200


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PDF IRF620, IRF621, IRF622, IRF623 TA9600. RF621, RF622, RF623 irf620 IRF620 HARRIS IFR622 1RF621 irf623 irf622
IRF620

Abstract: IRF621 YT37 IRF622 IRF623
Text: Power MOSFETs _ IRF620, IRF621, IRF622 , IRF623 File Number 1577 Power MOS Field-Effect , ENHANCEMENT MODE TERMINAL DIAGRAM The IRF620, IRF621, IRF622 and IRF623 are n-channel enhancement-mode , JEDEC TO-220AB Absolute Maximum Ratings Parameter IRF620 IRF621 IRF622 1RF623 Units Vq5 Drain â , Dp37-// _ Standard Power MOSFETs IRF620, IRF621, IRF622 , IRF623 Electrical Characteristics @Tc = , €¢ Source Breakdown Voltage IRF620 IRF622 200 - - V VQS ■OV lD = 250/iA IRF621 IRF623 ISO - - V


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PDF IRF620, IRF621, IRF622, IRF623 50V-200V IRF622 IRF620 IRF621 YT37
IRP623

Abstract: IRP621 IRF620 IRF620 application IRF621 IRF622 IRF623 TC 3162
Text: -Standard Power MOSFETs File Number 1577 IRF620, IRF621, IRF622 , IRF623 Power MOS , ENHANCEMENT MODE GO- TERMINAL DIAGRAM The IRF620, IRF621, IRF622 and IRF623 are n-channel enhancement-mode , JEDEC TO-22QAB Absolute Maximum Ratings Parameter IRF620 IRF621 IRF622 IRF623 Units Vqs Drain Source , . Standard Power MOSFETs - IRF620, IRF621, IRF622 , IRF623 Electrical Characteristics @Tc = 25°C (Unless , Voltage IRF620 IRF622 200 V «GS ■°v IRF62Ì IRF623 150 V ld - 250iiA VGS)|h) Gale Threshold


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PDF IRF620, IRF621, IRF622, IRF623 50V-200V IRF622 IRF623 IRP623 IRP621 IRF620 IRF620 application IRF621 TC 3162
1997 - IRF620

Abstract: IRF621 IRF620 HARRIS TB334 IFR622 IRF623 harris TA9600 IRF623 IRF622 IFR623
Text: IRF620, IRF621, IRF622 , IRF623 S E M I C O N D U C T O R 4.0A and 5.0A, 150V and 200V, 0.8 , NUMBER D PACKAGE BRAND IRF620 TO-220AB IRF620 IRF621 TO-220AB IRF621 IRF622 TO-220AB IRF622 IRF623 TO-220AB IRF623 G S NOTE: When ordering, use the entire , . Copyright © Harris Corporation 1997 5-1 File Number 1577.2 IRF620, IRF621, IRF622 , IRF623 , 40 0.32 85 -55 to 150 IRF621 150 150 5.0 3.0 20 ±20 40 0.32 85 -55 to 150 IRF622


Original
PDF IRF620, IRF621, IRF622, IRF623 IRF620 IRF621 IRF620 HARRIS TB334 IFR622 IRF623 harris TA9600 IRF623 IRF622 IFR623
Not Available

Abstract: No abstract text available
Text: Ros IRF622 200V 1.2Í1 4.0A IRF623 150V 1.2 0 4.0A MAXIMUM RATINGS IRF621 IRF622 , IRF622 IRF623 B V d ss Drain-Source Breakdown Voltage IRF620 IRF621 150 - - V , IRF621 5 0 - - A IRF622 IRF623 4.0 - - A - 0.4 0.8 n IRF622 , - 4 .0 A Pulse Source Current(Body Diode)(3) IRF620 IRF621 - - 20 A IRF622


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PDF 7Tbm42 GD12174 IRF620/621/622/623 IRF620 IRF621 IRF622 IRF623
IRF621

Abstract: IRF620
Text: 3 ^* 7/ N-channel enhancement mode vertical DMOS FET IRF620 IRF621 IRF622 IRF623 FEATURES · · · , achieve greater stability, reliability and ruggedness. PRODUCT SUMMARY Part No. IRF620 IRF621 IRF622 , IRF620 IRF621 IRF622 IRF623 ABSOLUTE MAXIMUM RATINGS Parameter VDs ·d !dm V qs Pd "n* t 6,b Orain-source , T '3 1 -1 1 IRF622 200 4 16 ±20 40 IRF623 Units 150 4 16 ±20 40 V A A V W °C - 55 to + 1 5 0 , voltage Part No. Min. IRF620 IRF622 IRF621 IRF623 V GS(th) Ig s s ·d s s Max. 4 500 250 1000 Unit V


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PDF IRF620 IRF621 IRF622 IRF623 O-220
IRF620

Abstract: No abstract text available
Text: H E D I MflS54S2 0 0 0 0 4 0 4 ? | IRF620, IRF621, IRF622. IRF623 Devices , im ensions in M illim e ters and (In ches) C-229 5.0A 'V w - T IRF620, IRF621, IRF622 , -39-11 Absolute Maximum Ratings Parameter IRF621 IRF622 IR F623 Units ■200 150 200 150 , €¢ Source Breakdown Voltage Type Min. Typ. M ax. Units IR F620 IRF622 200 - - , . Rating x 0 .8 , V q s = OV, T q = 1 2 5 °C IRF620 IRF621 5 .0 - - IRF622 IRF623 4 .0


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PDF IRF620 IRF621 O-220AB C-233 IRF620, IRF621, IRF622, IRF623 T-39-11 C-234 IRF620
D0217

Abstract: IRFP 620 IRF622 application FZJ 111 irf 44 n FZJ 101 transistor irf620 IRF622 IRF620 IRF623FI
Text: IRF622 200 V 1.2 n 4 A IRF622FI 200 V 1.2 n 3.5 A IRF623 150 V 1.2 ß 4 A IRF623FI 150 V 1.2 ß 3.5 A , (on) max ^GS = 10 V for IRF620/621/620FI/621FI for IRF622 /623/622FI/623FI 5 4 A A Rds (0nj Static drain-source on resistance VGS=10V lD=2.5A for IRF620/621 /620FI/621 Fl for IRF622 /623/622FI/623FI 0.8 1.2 Q , ¿fH starting Tj= 25°G for IRF620/621 /620FI/621 Fl for IRF622 /623/622FI/623FI 5 4 A A DYNAMIC 9fs , /621 Fl lSD=5A Vgs= 0 1.8 V for IRF622 /623/622FI/623FI lSD = 4 A VGS = 0 1.4 V


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PDF 620/FI-621/FI 622/FI-623/FI IRF620 IRF620FI IRF621 IRF621FI IRF622 IRF622FI IRF623 IRF623FI D0217 IRFP 620 IRF622 application FZJ 111 irf 44 n FZJ 101 transistor irf620
IRF622

Abstract: IRF623 IRF622 ge Ge 2sa IDM-16
Text:  IRF622 ,623 4 AMPERES 200,150 VOLTS RDS(ON) = 1-2 n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device rugged-ness and reliability. This design has been optimized to give superior performance in most , paralleling maximum ratings (Tc = 25° C) (unless otherwise specified) RATING SYMBOL IRF622 IRF623 UNITS , Breakdown Voltage IRF622 (VGS = OV, lD = 250 (JA) IRF623 BVdsS 200 150 — — Volts Zero Gate Voltage


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PDF IRF622 00A///sec, IRF623 IRF622 ge Ge 2sa IDM-16
irf621

Abstract: irf620
Text: IRF621 IRF622 IRF623 V ds 200V 150V 200V 150V RoS(on) 0 .8 0 0 o .s o o 1 2n 1.2Í1 Id 5.0A 5.0A 4.0A 4.0A , 150 ) I I ±20 IRF622 I IRF623 150 150 Unit Vdc Vdc Vdc Ade Ade Ade Ade mJ A Watts W , Characteristic Drain-Source Breakdown Voltage IR F620 IRF621 IRF622 IRF623 VGS(th) Ig s s Ig s s N-CHANNEL , On-State Drain-Source Current (2) IRF620 IRF621 IRF622 IRF623 Static Drain-Source On-State Resistance (2) IR F620 IRF621 IRF622 IRF623 - - 4.0 100 -1 0 0 250 1000 V d s = V g s . Id = 250^A V g s


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PDF IRF620/621/622/623 IRF620 IRF621 IRF622 IRF623
IRFP 620

Abstract: SD 621 transistor IRFP 306 transistor irf620 transistor irf b 620 irf 620
Text: ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF620 IRF620FI IRF621 IRF621FI IRF622 IRF622FI IRF623 IRF623FI , > ' d (on) x ^DS(on) max VGS = 1 0 V for IRF620/621/620FI/621FI for IRF622 /623/622FI/623FI VGS= 10 V lD= 2.5 A for IRF620/621/620FI/621FI for IRF622 /623/622FI/623FI ^DS (on) Static drain-source on , 100 fiH starting T j= 2 5 °G for IRF620/621/620FI/621 FI for IRF622 /623/622FI/623FI 5 4 A A , current (pulsed) Forward on voltage for IRF620/621/620FI/621 FI ISd = 5 A VGS = 0 for IRF622 /623/622FI


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PDF 620/FI-621/FI 622/FI-623/FI IRF620 IRF620FI IRF621 IRF621FI IRF622 IRF622FI IRF623 IRF623FI IRFP 620 SD 621 transistor IRFP 306 transistor irf620 transistor irf b 620 irf 620
Not Available

Abstract: No abstract text available
Text: w vys S IRF620, IRF621, IRF622 , IRF623 S em icon du cto r y y 4.0A and 5.0A, 150V , TO -220AB IRF620 IRF621 TO -220AB IRF621 IRF622 TO -220AB IRF622 IRF623 TO , a rris C o rp o ra tio n 1 9 9 7 ^ , File Number 1577.2 IRF620, IRF621, IRF622 , IRF622 IRF623 UNITS 200 150 200 150 V ■■V DGR 200 150 200 150 , ise specified MIN TYP MAX UNITS IRF620, IRF622 200 . . V IRF621, IRF623


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PDF IRF620, IRF621, IRF622, IRF623 RF622,
IRFP 620

Abstract: transistor 623 ir 623 p bem diode IRF 024 IRFP P CHANNEL
Text: MODE POWER MOS TRANSISTORS TYPE IRF620 IRF620FI IRF621 IRF621FI IRF622 IRF622FI IRF623 IRF623FI V DSS , A V D S > lD (on)x R DS(on)max V G S = 1 0 V for IRF620/621/620FI/621 FI for IRF622 /623/622FI , FI for IRF622 /623/622FI/623FI 0.8 1.2 n 0 ENERGY TEST *UIS Unclamped inductive switching current (single pulse) VDD= 30 V L = 100 starting T j= 25° G for IRF620/621 /620FI/621 FI for IRF622 , /620FI/621 FI ISd = 5 A V GS = 0 for IRF622 /623/622FI/623FI Isd = 4 A V GS = 0 350 lSD = 5 A di/dt = 100


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PDF 620/FI-621/FI 622/FI-623/FI IRF620 IRF620FI IRF621 IRF621FI IRF622 IRF622FI IRF623 IRF623FI IRFP 620 transistor 623 ir 623 p bem diode IRF 024 IRFP P CHANNEL
irf 30A

Abstract: irf 80 n TO-202AA VNP002A IRF840 IRF820 IRF740 IRF450 IRF440 mospower
Text: 1.2 4.0 40 IRF622 170 6.0 1.4 20 VN1706D 150 0.18 18.0 125 IRF641 150 0.22 16.0 125 IRF643 150 , Siliconix IRF220 ■IRF221 ■IRF222 ■IRF223 IRF620 ■IRF621 ■IRF622 ■IRF623 200V N-Channel , -220AB IRF622 200V 1.2fi 4.0A IRF623 150 V ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted


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PDF O-220 O-237 O-202 IRF450 IRF840 IRF440 VN5001D/IRF830 VNP002A* IRF820 VN5001A/IRF430 irf 30A irf 80 n TO-202AA VNP002A IRF740 mospower
IRF 50A

Abstract: IRF642 IRF641 IRF640 IRF633 IRF632 IRF631 IRF630 IRF622 IRF620
Text: 5.0 40 IRF620 200 1.2 4.0 40 IRF622 170 6.0 1.4 20 VN1706D 150 0.18 18.0 125 IRF641 150 0.22 , 1.2 6.25 VN35AB 1-10 Siliconix IRF220 ■IRF221 ■IRF222 ■IRF223 IRF620 ■IRF621 ■IRF622 , IRF620 200V 0.8Q 5.OA IRF621 150 V TO-220AB IRF622 200V 1.2fi 4.0A IRF623 150 V ABSOLUTE


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PDF IRF640 IRF642 IRF630 IRF632 IRF620 IRF622 VN1706D IRF641 IRF643 IRF631 IRF 50A IRF642 IRF641 IRF640 IRF633 IRF632 IRF631 IRF630 IRF622 IRF620
Not Available

Abstract: No abstract text available
Text: N-Channel Power MOSFETs NATL N-Channel Power MOSFETs (Continued) lD @ Pd V oss Type C ase No. IRF620 IRF621 IRF622 IRF623 MTP7N18 MTP7N20 IRF720 IRF721 IRF722 IRF723 MTP3N35 MTP3N40 IRF820 IRF821 IRF622 IRF823 MTP2N45 MTP2N50 Style TO-220 (37) TO-220 (37) TO-220 (37) T0-220 (37) TO-220 (37) T0-220 (37) TO-220 (37) T0-220 (37) T0-220 (37) T0-220 (37) T0-220 (37) T0-220 (37) TO-220 (37) TO-220 (37) T0-220 (37) TO-220 (37) TO-220 (37) TO-220 (37) (W ) T c = 25°C 40 40 40 40 75 75 40 40 40 40 75 75


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PDF IRF620 IRF621 IRF622 IRF623 MTP7N18 MTP7N20 IRF720 IRF721 IRF722 IRF723
IRF740 "direct replacement"

Abstract: irf9640 REPLACEMENT GUIDE IRF9540 replacement IRF640 irf510 2Sk350 HITACHI rca9213a IRF9613 fu120 buz11 cross reference 2SK309
Text: POWER MOSFETs SAMSUNG Direct Replace ment IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRF610 IRF611 IRF612 IRF613 IRF620 IRF621 IRF622 IRF623 IRF630 IRF631 IRF632 IRF633 IRF640 IRF641 IRF642 IRF643 IRF710 IRF711 IRF712 IRF713 IRF720 IRF721 IRF722 IRF723 IRF730 IRF731 IRF732 IRF733 IRF740 IRF741 , IRF513 IRF520 IRF521 IRF522 IRF523 IRF610 IRF611 IRF612 IRF613 IRF620 IRF621 IRF622 IRF623 IRF630 IRF631 , MTP5N35 SAMSUNG Direct Re placement IRF822 IRF623 IRF623 IRF622 IRF620 IRF721 IRF720 SSP4N55 SSP4N60


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PDF IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRF610 IRF611 IRF740 "direct replacement" irf9640 REPLACEMENT GUIDE IRF9540 replacement IRF640 irf510 2Sk350 HITACHI rca9213a IRF9613 fu120 buz11 cross reference 2SK309
IRF620

Abstract: 7n20 TI74 IRF220 IRF620-623 MTP7N20 IRF222 IRF622 IRF623 MTP7N18
Text: €¢ Low Drive Requirements • Ease of Paralleling TO-220AB IRF620 IRF621 IRF622 IRF623 MTP7N18 , IRF622 200 V 1.2 fi 4.0 A 2.5 A IRF623 150 V 1.2 Í2 4.0 A 2.5 A MTP7N18 180 V 0.7 Sì 7.0 A 4.5 A , MTP7N18 Rating IRF222/223 IRF622 /623 Unit Voss Drain to Source Voltage1 200 180 150 V Vdgr Drain to Gate


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PDF IRF220-223/IRF620-623 MTP7N18/7N20 O-220AB IRF620 IRF621 IRF622 IRF623 MTP7N18 MTP7N20 PC10230F IRF620 7n20 TI74 IRF220 IRF620-623 MTP7N20 IRF222 IRF622 IRF623 MTP7N18
IRF 50A

Abstract: VN5001A IRF452 IRF450 IRF442 IRF440 IRF432 IRF430 IRF422 IRF420
Text: – IRF223 IRF620 ■IRF621 ■IRF622 ■IRF623 200V N-Channel Enhancement Mode MOSPOWER Siliconix , 1.2Q 4.0A IRF223 150 V IRF620 200V 0.8Q 5.OA IRF621 150 V TO-220AB IRF622 200V 1.2fi 4.0A


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PDF IRF450 IRF452 IRF440 IRF442 VNP002A* VN5001A IRF430 VN5002A IRF432 IRF420 IRF 50A VN5001A IRF452 IRF450 IRF442 IRF440 IRF432 IRF430 IRF422 IRF420
IRF 4310

Abstract: ir 4310 IRF621R
Text: . IRF621 IRF621R 150 150 5.0 3.0 20 ±20 40 0.32 20 85 - 5 5 t o + 150 300 IRF622 IRF622R 200 200 4.0 2.5 , IRF622 /623, IRF622R /623R Forward Transconductance (Note 2) Input Capacitance Output Capacitance Reverse , DRAIN (FLANGE) o I > SOURCE DRAIN GATE Description The IRF620, IRF621, IRF622 , and IRF623 are n-channel enhancement-mode silicon-gate power field-effect transis tors. IRF620R, IRF621R, IRF622R and , 150 300 File Number 1577.1 4-306 ÎR F620, IR F 6 2 1 IRF622 , /R F623 , IRF620R


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PDF F620R /621R /622R /623R IRF620, IRF621, IRF622, IRF623 IRF620R, IRF621R, IRF 4310 ir 4310 IRF621R
IRF 850

Abstract: IRf 92 0151 623 13a 8Q DIODE irf640 IRF840 IRF820 IRF740 IRF450 IRF440
Text: !) IRF220 ■IRF221 ■IRF222 ■IRF223 IRF620 ■IRF621 ■IRF622 ■IRF623 200V N-Channel , -220AB IRF622 200V 1.2fi 4.0A IRF623 150 V ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted


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PDF O-220 O-237 O-202 IRF450 IRF840 IRF440 VN5001D/IRF830 VNP002A* IRF820 VN5001A/IRF430 IRF 850 IRf 92 0151 623 13a 8Q DIODE irf640 IRF740
CA111

Abstract: MTP7N20 MTP7N18 IRF722 IRF721 IRF720 IRF623 IRF622 IRF621 IRF620
Text: - 5. il £ s £ |E|gls|e|g|g|g|e|g|s|s|e|g|s|EÌB|g|g l<* IRF620 IRF621 IRF622 IRF623 MTP7N18


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PDF DU37114 T-39-Ã IRF620 IRF621 IRF622 IRF623 MTP7N18 MTP7N20 IRF720 IRF721 CA111 IRF722
irf 150 equivalent

Abstract: 2sk135 equivalent hitachi 2sk135 irf150 HPWR-6502 2SK133 IRF331 PM100RLA060 IRF351 irf 111
Text: ■IRF221 ■IRF222 ■IRF223 IRF620 ■IRF621 ■IRF622 ■IRF623 200V N-Channel , -220AB IRF622 200V 1.2fi 4.0A IRF623 150 V ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted


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PDF PWR-6501 IRF441 HPWR-6502 IRF340 HPWR-6503 HPWR-6504 VN4001A 2SK132 IRF122 irf 150 equivalent 2sk135 equivalent hitachi 2sk135 irf150 2SK133 IRF331 PM100RLA060 IRF351 irf 111
1RF620

Abstract: No abstract text available
Text: , IRF621, IRF622 , and IRF623 are n-channel enhancement-mode silicon-gate power fleld-effect transis­ tors. IRF620R, IRF621R, IRF622R and IRF623R types are advanced power MOSFETs designed, tested, and , 1577.1 4305271 □□54014 055 ■HAS 1RF620, IR F 6 2 1, IRF622 , IR F623 IRF620R , MOSFETs ■■I 4302271 0054015 m ■HAS IRF620, IRF621, IRF622 , /R F623 IRF620R, IRF621R, IRF622R , IRF623R -, , y , u r SC TE / / r 1 ' 0 i — t i 20


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PDF IRF62 OR/621R /622R /623R IRF620, IRF621, IRF622, IRF623 IRF620R, IRF621R, 1RF620
IRF413

Abstract: 1RF530 samsung irf540 RF543 IRF449 IRF460 BS250F 1RF620 IRF448 1rf630
Text: 150 ±20 5' 40 ±500 ±20 250 150 2 4 0. 25 0.8 10 2.5 5 10 1. 3 2. 5 600 300 80 25 TO-220 IRF622 , -220AB IRF622 MOT n 200 ±20 4 40 ±100 ±20 250 200 2 4 0. 25 1.2 10 2. 5 4 10 1. 3 2. 5 600 300 80 25 TO , TO-220 IRF622 SAMSUNG N 100 0. 34 8 TO—220 IRF523 SAMSUNG N 80 0. 36 , 10 1.3 2.5 600 300 80 25 T0-220AB IRF622 SILICONIX N 200 ±20 4 40 ±100 ±20 250 200 2.0 4.0 1. 2


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PDF Ta-2510) SD210 TD-12 SD211 SD212 S0213 O-220AB IRF630 IRF631 IRF413 1RF530 samsung irf540 RF543 IRF449 IRF460 BS250F 1RF620 IRF448 1rf630
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