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Top Results (5)

Part Manufacturer Description Datasheet Download Buy Part
IRF610PBF Vishay Siliconix Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN
IRF610STRLPBF Vishay Siliconix Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3
IRF610SPBF Vishay Siliconix Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3
IRF610STRRPBF Vishay Siliconix Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3
IRF610LPBF Vishay Siliconix MOSFET N-CH 200V 3.3A TO-262
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Search Stock (40)

  You can filter table by choosing multiple options from dropdownShowing 35 results of 40
Part Manufacturer Supplier Stock Best Price Price Each Buy Part
IRF610 International Rectifier Bristol Electronics 38 - -
IRF610 . Bristol Electronics 30 - -
IRF610 HARTING Technology Group Chip One Exchange 800 - -
IRF610 Intersil Corporation ComS.I.T. 3,200 - -
IRF610 International Rectifier Bristol Electronics 50 - -
IRF610 Harris Semiconductor Rochester Electronics 3,793 $0.24 $0.19
IRF610 International Rectifier Bristol Electronics 220 $0.68 $0.25
IRF610 39 Chip One Exchange 300 - -
IRF610A Fairchild Semiconductor Corporation Rochester Electronics 1,000 $0.22 $0.18
IRF610B Fairchild Semiconductor Corporation Rochester Electronics 5,501 $0.43 $0.35
IRF610LPBF Vishay Intertechnologies Avnet - - -
IRF610LPBF Vishay Intertechnologies Avnet - €0.73 €0.37
IRF610PBF Vishay Intertechnologies Avnet 1,350 €0.34 €0.17
IRF610PBF Vishay Intertechnologies Avnet - $0.79 $0.53
IRF610PBF Vishay Intertechnologies element14 Asia-Pacific 1,867 $0.88 $0.30
IRF610PBF Vishay Intertechnologies Newark element14 1,817 $0.83 $0.55
IRF610PBF Vishay Siliconix Allied Electronics & Automation - $0.82 $0.48
IRF610PBF Vishay Intertechnologies Chip1Stop 894 $0.52 $0.48
IRF610PBF Vishay Intertechnologies Allied Electronics & Automation 2,045 $1.09 $0.89
IRF610PBF Vishay Intertechnologies RS Components 663 £1.00 £0.30
IRF610PBF Vishay Intertechnologies RS Components 880 £0.45 £0.30
IRF610PBF Vishay Intertechnologies TME Electronic Components 574 $0.28 $0.19
IRF610PBF Vishay Intertechnologies Future Electronics 13,150 $0.31 $0.28
IRF610PBF Vishay Intertechnologies Chip1Stop 10,390 $1.19 $0.29
IRF610PBF Vishay Intertechnologies Chip1Stop 163 $0.75 $0.51
IRF610PBF Vishay Intertechnologies Schukat electronic 700 €0.29 €0.16
IRF610PBF Vishay Intertechnologies Farnell element14 2,262 £0.41 £0.26
IRF610PBF Vishay Intertechnologies Avnet - $0.81 $0.23
IRF610PBF Vishay Siliconix New Advantage Corporation 33,846 $0.64 $0.58
IRF610S2497 Harris Semiconductor Rochester Electronics 2,400 $0.24 $0.19
IRF610SPBF Vishay Siliconix ComS.I.T. 400 - -
IRF610SPBF Vishay Intertechnologies Chip1Stop 2,000 $0.69 $0.47
IRF610SPBF Vishay Intertechnologies Avnet 100 €1.14 €0.64
IRF610SPBF Vishay Intertechnologies Future Electronics - $0.94 $0.75
IRF610STRLPBF Vishay Intertechnologies ComS.I.T. 6,190 - -

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IRF610 datasheet (63)

Part Manufacturer Description Type PDF
IRF610 Fairchild Semiconductor 3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET Original PDF
IRF610 Harris Semiconductor Power MOSFET Selection Guide Original PDF
IRF610 Intersil 3.3A, 200V, 1.500 ?, N-Channel Power MOSFET Original PDF
IRF610 Texas Instruments High-Speed CMOS Logic Quad D-Type Flip-Flop with Reset Original PDF
IRF610 Toshiba Power MOSFETs Cross Reference Guide Original PDF
IRF610 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 3.3A TO-220AB Original PDF
IRF610 Fairchild Semiconductor N-Channel Power MOSFETs, 3.5A, 150-200V Scan PDF
IRF610 FCI POWER MOSFETs Scan PDF
IRF610 Frederick Components Power MOSFET Selection Guide Scan PDF
IRF610 General Electric Power Transistor Data Book 1985 Scan PDF
IRF610 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 2.5A. Scan PDF
IRF610 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
IRF610 International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 200V, 3.3A, Pkg Style TO-220AB Scan PDF
IRF610 International Rectifier HEXFET Power MOSFET Scan PDF
IRF610 International Rectifier TO-220 N-Channel HEXFET Power MOSFET Scan PDF
IRF610 Intersil Over 600 obsolete distributor catalogs now available on the Datasheet Archive - MOSFET, N Channel, 200V, 3.3A, Pkg Style TO220AB Scan PDF
IRF610 Motorola Switchmode Datasheet Scan PDF
IRF610 Motorola European Master Selection Guide 1986 Scan PDF
IRF610 Motorola TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39 Scan PDF
IRF610 Others 3.3A, 200V, 1.500 ?, N-Channel Power MOSFET Scan PDF

IRF610 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
IRF610

Abstract: IRF612 irf P 611 IRF610-613 IRF611 IRF613 MTP2N18 MTP2N20
Text: 3469674 FAIRCHILD SEMICONDUCTOR M^m 0027^ FAIRCHILD A Schlumberger Company IRF610-613 , package outline, reter to 2-152 3469674 FAIRCHILD SEMICONDUCTOR "fl4 | 341,^1,74 0DE7T4D 3 IRF610-613 , Characteristics vGS(th) Gate Threshold Voltage IRF610-613 MTP2N18/20 V lD = 250 uA, VDS = VGS lD = 1 mA , = 45 V 2-153 3469674 FAI RCHILD SEM I CONDUCTOR^ DeT| 34^74 ÜDa7T4l IRF610-613 MTP2N18/2N20 , –¡57ci4a 7 IRF610-613 MTP2N18/2N20 J. Typical Performance Curves (Cont.) Figure 5 Capacitance vs Drain to


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PDF IRF610-613 MTP2N18/2N20 O-22QAB IRF610 IRF611 IRF612 IRF613 MTP2N18 NITP2N20 IRF610/612 IRF610 IRF612 irf P 611 IRF611 IRF613 MTP2N18 MTP2N20
irf610

Abstract: power MOSFET IRF610 F611 irf610 mosfet IRF612 IRF-610 mosfet irf610
Text: IRF610 /611/612/613 FEATURES · · · · · · · Lower Rds < on) Improved inductive ruggedness Fast , Improved high temperature reliability N-CHANNEL POWER MOSFETS PRODUCT SUMMARY Part Number IRF610 , 3.3 2.1 8 ± 1 .5 46 3.3 43 0 .3 4 - 5 5 to 150 300 IRF610 200 200 IRF611 150 150 ±20 2.6 1.6 6.5 2.6 , , R g = 2 5 0 , Starting T j= 2 5 °C 134 ELECTRONICS IRF610 /611/612/613 ELECTRICAL CHARACTERISTICS Symbol C haracteristic Drain-Source Breakdown Voltage IRF610 /6 1 2 BVoss IR F611/613 VGS(th


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PDF IRF610/611/612/613 IRF610 IRF611 IRF612 IRF613 power MOSFET IRF610 F611 irf610 mosfet IRF-610 mosfet irf610
irf610

Abstract: power MOSFET IRF610 irf610 mosfet pulse electronics era IRF61 irf610 samsung
Text: Junction-to-Ambient MAX TYP MAX IRF610-3 2.9 0.5 80 Unit K/W K/W K/W Mounting surface flat, smooth, and greased Free , IRF610 /611/612/613 FEATURES · · · · · · · Lower Rds (on) Improved inductive ruggedness Fast , Improved high temperature reliability N-CHANNEL POWER MOSFETS PRODUCT SUMMARY Part Number IRF610 , Id b Idm Igm Eas Ias Pd 3.3 2.1 8 3.3 2.1 8 ± 1 .5 46 3.3 43 0.3 4 - 5 5 to 150 300 IRF610 200 200 , V , RG= 2 5 0 , Starting T j = 2 5 ° C eg SAM SUNG Electronics 137 IRF610 /611/612/613


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PDF IRF610/611/612/613 IRF610 IRF61 IRF612 IRF613 power MOSFET IRF610 irf610 mosfet pulse electronics era irf610 samsung
IRF610

Abstract: 250M 25CC IRF611 irf610 mosfet
Text:  IRF610 /611 N-CHANNEL POWER MOSFETS FEATURES • Lower Rosìon) ■Improved inductive , Number Vds RDSfon) Id IRF610 200V 1.50 3.3A IRF611 150 V i.sn 3.3A ABSOLUTE MAXIMUM RATINGS Characteristic Symbol IRF610 IRF611 Unit Drain-Source Voltage (1) Vdss 200 150 Vdc Drain-Gate Voltage (Rgs , IRF610 /611 N-CHANNEL POWER MOSFETS ELECTRICAL CHARACTERISTICS (Tc=25°C unless Otherwise specified) Symbol Characteristic Min Typ Max Units Test Conditions BVdss Drain-Source Breakdown Voltage IRF610


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PDF IRF610/611 IRF610 IRF611 os-10\ 250M 25CC irf610 mosfet
IRF013

Abstract: D33A power MOSFET IRF610 1RF610 irf610 samsung irf610 mosfet IRF61Q irf610 613 33A
Text: IRF610 /611/612/613 FEATURES · Lower R d s (ON) · Improved inductive ruggedness N-CHANNEL POWER , IRF610 IRF611 IRF612 IRF613 Vos 200V 150V 200V 150V R0S(on) i.s n 1.5Q 2.4Ü 2 .40 Id 3.3A 3.3A 2.6A 2.6A IRF610 /611/612/613 MAXIMUM RATINGS Characteristic Drain-Source Voltage (1) Drain-Gate Voltage (Rqs , IRF610 200 200 3.3 2,1 8 IRF611 150 150 ±20 3 3 2.1 8 ±1 .5 46 3.3 43 0.34 IRF612 200 200 2.6 1.6 , =25il, Starting Tj=25°C «BElectronics SAMSUNG 194 IRF610 /611/612/613 ELECTRICAL CHARACTERISTICS Symbol


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PDF IRF610/611/612/613 O-220 IRF610 IRF611 IRF612 IRF613 IRF013 D33A power MOSFET IRF610 1RF610 irf610 samsung irf610 mosfet IRF61Q 613 33A
MOSFET irf 939

Abstract: irf610
Text: , ease of paralleling and tem perature stability of the electrical parameters. BV q s S IRF610 , 0 I 4055452 000041,? 7 | T . 39- I I IRF610 , IRF611, IRF612, IRF613 Devices INTERNATIONAL R E C T I F I E R Absolute Maximum Ratings IRF610 , IRF611 IRF612, IRF613 Iq < T q « 25 , © Type IRF610 IRF612IRF811 IRF613 IRF610 IRF011 Min. v GS IRF610 IRF611 VDS> *D(on) X RDS(on)MaxVq s - 10V V


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PDF S54S2 T0-220AB IRF611 IRF612 IRF613 IRF610 IRF610, IRF611, IRF612, IRF613 MOSFET irf 939 irf610
IRF610

Abstract: IRF612 IRF613 power MOSFET IRF610 IRF611 irf610 mosfet
Text: Power MOSFETs File Number 1576 IRF610 , IRF611, IRF612, IRF613 Power MOS Field-Effect Transistors , -33741 TERMINAL DIAGRAM The IRF610 , IRF611, IRF612 and IRF613 are n-channel enhancement-mode silicon-gate power , DE 1 3fl7SDöl 001Ö34S 0 I 3875081 G E SOLID STATE 01E 18345 DT Standard Power MOSFETs _ IRF610 , Type Mm Tvp Max. Units Test Conditions BVpgy Drain • Source Breakdown Voltage IRF610 IRF612 200 - - , Current <2) IRF610 IRF611 2.5 - A VDS > 'D(on) * RDSIRF612 IRF613 2 0 - A


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PDF IRF610, IRF611, IRF612, IRF613 50V-200V S2CS-33741 IRF612 IRF613 IRF610 power MOSFET IRF610 IRF611 irf610 mosfet
2008 - IRF610

Abstract: irf610 ir power MOSFET IRF610
Text: -220 IRF610PbF SiHF610-E3 IRF610 SiHF610 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted , IRF610 , SiHF610 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , , exemptions may apply Document Number: 91023 S-81240-Rev. A, 16-Jun-08 www.vishay.com 1 IRF610 , SiHF610 , : 91023 S-81240-Rev. A, 16-Jun-08 IRF610 , SiHF610 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C , On-Resistance vs. Temperature Document Number: 91023 S-81240-Rev. A, 16-Jun-08 www.vishay.com 3 IRF610


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PDF IRF610, SiHF610 O-220 O-220 12-Mar-07 IRF610 irf610 ir power MOSFET IRF610
Not Available

Abstract: No abstract text available
Text: ™ K N-CHANNEL POWER MOSFETS IRF610 /611 /612/613 FEATURES • • • • • • â , PRODUCT SUMMARY Part Number Vos R d s < i >) o Id IRF610 200V 1.5 « 3.3A IRF611 , MAXIMUM RATINGS Symbol IRF610 IRF611 IRF612 IRF613 Unit Drain-Source Voltage (1 , G K N-CHANNEL POWER MOSFETS bME D IRF610 /611/612/613 ELECTRICAL CHARACTERISTICS , Drain-Source Breakdown Voltage IRF610 /612 200 - - V VGs=0V IRF611/613 150 — â


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PDF IRF610/611 IRF610 IRF611 IRF612 IRF613 IRF610/611/612/613
IRF610

Abstract: MOSFET dynamic irf610pbf power MOSFET IRF610
Text: S N-Channel MOSFET ORDERING INFORMATION Package TO-220AB IRF610PbF SiHF610-E3 IRF610 , IRF610 , SiHF610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) · , ?91000 IRF610 , SiHF610 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX , ?91000 IRF610 , SiHF610 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 101 VGS , DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF610 , SiHF610 Vishay Siliconix 300 VGS = 0 V


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PDF IRF610, SiHF610 2002/95/EC O-220AB O-220AB 11-Mar-11 IRF610 MOSFET dynamic irf610pbf power MOSFET IRF610
IRF610

Abstract: 1RF610-613 1RF610 IRF612 IRF611 MTP2N20 IRF613 MTP2N18 irf P 611 2N20
Text: 3469674 FAIRCHILD SEMICONDUCTOR ^T» ■bbkmmh IRF610-613 fairchild MTP2N18/2N20 A , SEMICONDUCTOR "fl4 | 341,^1,74 0DE7T4D 3 IRF610-613 MTP2N18/2N20 T-^-O^ Electrical Characteristics (Te = 25 , ±500 nA VGS = ± 20 V, Vds = o V On Characteristics vGS(th) Gate Threshold Voltage IRF610-613 , CONDUCTOR^ DeT| 34^74 ÜDa7T4l IRF610-613 MTP2N18/2N20 "T-^^O^ Electrical Characteristics (Cont.) (Tc = , FAIRCHILD SEMICONDUCTOR fl4 DE | 34^74 □□57ci4a 7 IRF610-613 MTP2N18/2N20 J. Typical Performance


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PDF IRF610-613 MTP2N18/2N20 IRF610/612 NITP2N20 MTP2N18 IRF611/613 PCU100F IRF610 1RF610-613 1RF610 IRF612 IRF611 MTP2N20 IRF613 irf P 611 2N20
IRF612

Abstract: IRF613 IRF611 IRF610 IRFB10 power MOSFET IRF610 IRF 513#
Text: Standard Power MOSFETs—- IRF610 , IRF611, IRF612, IRF613 Power MOS Field-Effect Transistors , carrier device GO- TERMINAL DIAGRAM The IRF610 , IRF611, IRF612 and IRF613 are n-chanriel , 92CS-39528 JEDEC TO-22QAB Absolute Maximum Ratings Parameter IRF610 IRF611 IRF612 IRF613 Units Vpg Dram , case for 10s) °c 3-154. -Standard Power MOSFETs IRF610 , IRF611, IRF612, IRF613 Electrical , . Rating x 0.8, VGS OV, Tc = 1 25°C 'Oloni On-State Dram Current © IRF610 IRF611 2.5 - - A VDS


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PDF IRF610, IRF611, IRF612, IRF613 50V-200V IRF612 IRF613 IRF611 IRF610 IRFB10 power MOSFET IRF610 IRF 513#
Not Available

Abstract: No abstract text available
Text: IRF610 Semiconductor Data Sheet June 1999 3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET , integrated circuits. Ordering Information IRF610 Features • 3.3A, 200V • r DS(ON) = , PC Boards” Formerly developmental type TA17442. PART NUM BER File Number BRAND IRF610 , . 1-800-4-H A R R IS or 407-727-9207 | C opyright © Harris C orporation 1999 IRF610 Absolute Maximum Ratings T c = 25°c, Unless Otherwise Specified IRF610 UNITS Drain to Source Voltage (Note 1


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PDF IRF610 1-500i2
1997 - IRF610

Abstract: power MOSFET IRF610 IRF611 irf610 mosfet irf612
Text: S E M I C O N D U C T O R IRF610 , IRF611, IRF612, IRF613 2.6A and 3.3A, 150V and 200V, 1.5 and , Surface Mount Components to PC Boards" Symbol Ordering Information D PART NUMBER IRF610 IRF611 IRF612 IRF613 PACKAGE TO-220AB TO-220AB TO-220AB TO-220AB BRAND IRF610 IRF611 IRF612 IRF613 S G , IRF610 , IRF611, IRF612, IRF613 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRF610 , 125oC 2 4 25 250 V V V µA µA MIN TYP MAX UNITS Drain to Source Breakdown Voltage IRF610 , IRF612


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PDF IRF610, IRF611, IRF612, IRF613 TA17442. IRF610 power MOSFET IRF610 IRF611 irf610 mosfet irf612
Not Available

Abstract: No abstract text available
Text: ® IRF610 , IRF611, IRF612, IRF613 H R I A RS S E M I C O N D U C T O R 2.6A and 3.3A , Ordering Information PART NUMBER PACKAGE BRAND IRF610 TO -220AB IRF610 IRF611 TO , © Harris Corporation 1997 ^ , File Number 1576.2 IRF610 , IRF611, IRF612, IRF613 Absolute Maximum Ratings T c = 25°c, Unless Otherwise Specified IRF610 IRF611 IRF612 IRF613 Drain , IRF610 , IRF612 200 . . V IRF611, IRF613 150 - - V V DS = VGS> I d = 250nA


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PDF IRF610, IRF611, IRF612, IRF613 RF612, RF613
2001 - irf610 mosfet

Abstract: IRF610 power MOSFET IRF610 4V801
Text: IRF610 Data Sheet June 1999 File Number 1576.3 3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET Title F61 bt 3A, 0V, 00 m, anOrdering Information wer OST) uthor PART NUMBER IRF610 PACKAGE TO-220AB BRAND IRF610 Features · 3.3A, 200V · rDS(ON) = 1.500 · Single Pulse Avalanche Energy Rated · SOA is , DRAIN GATE DRAIN (FLANGE) ©2001 Fairchild Semiconductor Corporation IRF610 Rev. A IRF610 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRF610 200 200 3.3 2.1 8 ±20 43 0.34 46 -55


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PDF IRF610 IRF610 O-220AB TB334 irf610 mosfet power MOSFET IRF610 4V801
qk1 motor

Abstract: 1RF610 irf611 IRF612 RF612
Text: Surface Mount Components to PC Boards" Symboi Ordering Information PART NUMBER IRF610 IRF611 IRF612 IRF613 PACKAGE TO-220AB TO-220AB TO-220AB TO-22QAB BRAND IRF610 IRF611 IRF612 IRF613 NOTE: When , = 25 °c. Unless Otherwise Specified IRF610 Drain to Source Voltage (Note 1 , TYP MAX UNITS Drain to Source Breakdown Voltage IRF610 , IRF612 IRF611, IRF613 Gate Threshold , 2) IRF610 , IRF611 IRF612, IRF613 Gate to Source Leakage Current Drain to Source On Resistance (Note


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PDF 1RF610, IRF611, RF612, RF613 RF613 qk1 motor 1RF610 irf611 IRF612 RF612
2012 - power MOSFET IRF610

Abstract: No abstract text available
Text: Lead (Pb)-free SnPb TO-220AB IRF610PbF SiHF610-E3 IRF610 SiHF610 ABSOLUTE MAXIMUM RATINGS (TC = 25 , IRF610 , SiHF610 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF610 , SiHF610 , ?91000 IRF610 , SiHF610 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 101 Top , ?91000 IRF610 , SiHF610 Vishay Siliconix 300 250 200 Ciss 150 Coss 100 50 0 100 101 Crss ISD, Reverse


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PDF IRF610, SiHF610 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 power MOSFET IRF610
2011 - power MOSFET IRF610

Abstract: No abstract text available
Text: Lead (Pb)-free SnPb TO-220AB IRF610PbF SiHF610-E3 IRF610 SiHF610 ABSOLUTE MAXIMUM RATINGS (TC = 25 , IRF610 , SiHF610 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF610 , SiHF610 , ?91000 IRF610 , SiHF610 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 101 Top , ?91000 IRF610 , SiHF610 Vishay Siliconix 300 250 200 Ciss 150 Coss 100 50 0 100 101 Crss ISD, Reverse


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PDF IRF610, SiHF610 2002/95/EC O-220AB 11-Mar-11 power MOSFET IRF610
2015 - Not Available

Abstract: No abstract text available
Text: IRF610 , SiHF610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) â , D COMPLIANT S S N-Channel MOSFET ORDERING INFORMATION Package TO-220AB IRF610PbF SiHF610-E3 IRF610 SiHF610 Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless , SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF610 , SiHF610 Vishay Siliconix THERMAL , TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF610 , SiHF610 Vishay Siliconix


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PDF IRF610, SiHF610 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A
2002 - IRF610

Abstract: TB334 power MOSFET IRF610 IRF61
Text: IRF610 Data Sheet January 2002 3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET This , PACKAGE BRAND D IRF610 TO-220AB IRF610 NOTE: When ordering, use the entire part number , Semiconductor Corporation IRF610 Rev. B IRF610 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRF610 200 200 3.3 2.1 8 ±20 43 0.34 46 -55 to 150 UNITS V V A A A V W W/oC , - - 2.9 oC/W - - 80 oC/W LD G LS S IRF610 Rev. B IRF610 Source to


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PDF IRF610 TA17442. IRF610 TB334 power MOSFET IRF610 IRF61
Not Available

Abstract: No abstract text available
Text: IRF610 , SiHF610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) â , D COMPLIANT S S N-Channel MOSFET ORDERING INFORMATION Package TO-220AB IRF610PbF SiHF610-E3 IRF610 SiHF610 Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless , SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF610 , SiHF610 Vishay Siliconix THERMAL , TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF610 , SiHF610 Vishay Siliconix


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PDF IRF610, SiHF610 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A
2009 - IRF610

Abstract: power MOSFET IRF610 IRF610PBF MOSFET irf610 mosfet
Text: MOSFET ORDERING INFORMATION Package TO-220 IRF610PbF SiHF610-E3 IRF610 SiHF610 Lead (Pb , IRF610 , SiHF610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) · , -Jun-08 www.vishay.com 1 IRF610 , SiHF610 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP , -81240-Rev. A, 16-Jun-08 IRF610 , SiHF610 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise , . Temperature Document Number: 91023 S-81240-Rev. A, 16-Jun-08 www.vishay.com 3 IRF610 , SiHF610


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PDF IRF610, SiHF610 O-220 O-220 18-Jul-08 IRF610 power MOSFET IRF610 IRF610PBF MOSFET irf610 mosfet
Not Available

Abstract: No abstract text available
Text: Lead (Pb)-free SnPb TO-220AB IRF610PbF SiHF610-E3 IRF610 SiHF610 ABSOLUTE MAXIMUM RATINGS (TC = 25 , IRF610 , SiHF610 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF610 , SiHF610 , ?91000 IRF610 , SiHF610 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 101 Top , ?91000 IRF610 , SiHF610 Vishay Siliconix 300 250 200 Ciss 150 Coss 100 50 0 100 101 Crss ISD, Reverse


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PDF IRF610, SiHF610 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
1999 - intersil irf610

Abstract: IRF610 TB334 power MOSFET IRF610
Text: IRF610 Data Sheet June 1999 3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET This N-Channel , Boards" Symbol PACKAGE BRAND D IRF610 TO-220AB IRF610 NOTE: When ordering, use the , . http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 IRF610 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRF610 200 200 3.3 2.1 8 ±20 43 0.34 46 , - - 2.9 oC/W - - 80 oC/W LD G LS S IRF610 Source to Drain Diode


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PDF IRF610 TA17442. intersil irf610 IRF610 TB334 power MOSFET IRF610
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