The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
IRF540STRLPBF Vishay Siliconix Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3
IRF540SPBF Vishay Siliconix Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3
IRF540NSTRRPBF Infineon Technologies AG Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
IRF540ZSPBF Infineon Technologies AG Power Field-Effect Transistor, 36A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
IRF540ZPBF Infineon Technologies AG Power Field-Effect Transistor, 36A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
IRF540STRRPBF Vishay Siliconix Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3

IRF540/541 Datasheets Context Search

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IRF540

Abstract:
Text: S A MS UN G E L E C T R O N I C S INC b4E ] > ■7^4142 IRF540/ 541 /542/543 , INC b4E D ■7 ^ 4 1 4 2 GG121b4 fl77 IRF540/ 541 /542/543 IRFP140/141 /142/143 , 1 4 2 DD121bb b4T « S M G K IRF540/ 541 /542/543 N-CHANNEL POWER MOSFETS IRFP140/141 /142 , ELECTRONICS INC IRF540/ 541 /542/543 IRFP140/141 /142/143 Tj, JUNCTION TEMPERATURE <«C) Breakdown , ELECTRONICS INC b4E T > IRF540/ 541 /542/Ö43 IRFP140/141 /142/143 ■7^4142 0Q121bñ 412 Â


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PDF IRF540/541/542/543 IRFP140/141 00121b3 O-220 IRF540/IRFP1 IRFP141 IRFP140/141/142/143 IRF540 IRF540/541 IRF540 irfp140
irf540

Abstract:
Text: N-CHANNEL POWER MOSFETS IRF540/ 541 FEATURES • • • • • • • Lower R d s , ■002075b 53Ö N-CHANNEL POWER MOSFETS IRF540/ 541 ELECTRICAL CHARACTERISTICS Symbol , temperature 218 ELECTRONICS 7^4142 DD2f l 757 474 N-CHANNEL POWER MOSFETS IRF540/ 541 , Maximum Safe Operating Area 219 ELECTRONICS ■7*^4142 0D2Ô7SÔ 3DD IRF540/ 541 , 002075=1 247 N-CHANNEL POWER MOSFETS IRF540/ 541 0 Vos, DR A IN -TO -SO UR CE V O L T A G E


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PDF IRF540/541 IRF540 IRF541 irf540
IRF540

Abstract:
Text: JLÆ in c o rp o ra te d O ' S ilico n ix IRF540/ 541 /542/543 N-Channel Enhancement Mode , mH dm Ur E ar Pd SYMBOL V GS d 540 ±20 27 17 108 27 36 125 50 541 ±20 27 17 108 27 36 , (refer to transient thermal impedance data, Figure 11). 2Duty cycle < 1%. IRF540/ 541 /542/543 E L E C , °C On-State Drain Current1 Draln-Source On-State Resistance1 IRF540, 541 IRF542, 543 IRF540, 541 IRF542, 543 IRF540, 541 IRF542, 543 Forward Transconductance1 DYNAMIC Input Capacitance Output Capacitance Reverse


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PDF IRF540/541/542/543 O-220AB IRF540 IRF541 IRF542 IRF543 10peration irf540 27 MHz SEC IRF540 75 LS 541 irf540 "27 MHz" IRF540 Rg IRF540 SEC irf540 be irf 480
IRF540

Abstract:
Text: IRF140,142, 540, 542 . 100V IRF141,143, 541 ,543 . . 60V Drain-Gate Voltage IRF140,142,540,542 . 100V IRF141,143, 541 ,543 . 60V Drain Current Continuous IRF140,141,540, 541 , , 541 27 A VDS = 25V. Vns = 10V (Note 1) IRF142, 143 IRF542, 543 24 Static Drain-Source On-State 'DS(on) Resistance IRF140, 141 IRF540, 541 0.07 0.085 Si VGS = 10V, lD = 15A (Note 1) IRF142


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PDF IRF640 IRF642 IRF630 IRF632 IRF620 IRF622 VN1706D IRF641 IRF643 IRF631 IRF540 irf140 75 LS 541 IRF542 irf540 27 MHz IRF142 IRF141 VN1706D IRF622 IRF630
IRF540

Abstract:
Text: IRF540/ 541 /542/543 IRFP140/141/142/143 FEATURES · · · · · · · L o w e r R ds (ON) Im p ro v e d , IRF540/ 541 /542/543 IRFP140/141/142/143 ELECTRICAL CHARACTERISTICS Symbol C haracteristic Drain-Source , Characteristics Typical Transfer Characteristics 130 ELECTRONICS IRF540/ 541 /542/543 IRFP140/141/142/143 , / 541 /542/543 IRFP14 0 /14 1/14 2/14 3 N-CHANNEL POWER MOSFETS -4 0 0 40 80 12 0 , On-flesistanee Vs. Drain Current Maximum Drain Current Vs. Case Temperature 132 ELECTRONICS IRF540/ 541


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PDF IRF540/541/542/543 IRFP140/141/142/143 O-220 IRF540 IRFP14U IRFo41 IRFP141 IRF542 IRFP142 IRF543 IRFP140 IRF540-3 IRFp1401 IRFP14U IRF541 IRF540 n-channel MOSFET IRFP140-3
VN64GA

Abstract:
Text: IRF140,142, 540, 542 . 100V IRF141,143, 541 ,543 . . 60V Drain-Gate Voltage IRF140,142,540,542 . 100V IRF141,143, 541 ,543 . 60V Drain Current Continuous IRF140,141,540, 541 , , 541 27 A VDS = 25V. Vns = 10V (Note 1) IRF142, 143 IRF542, 543 24 Static Drain-Source On-State 'DS(on) Resistance IRF140, 141 IRF540, 541 0.07 0.085 Si VGS = 10V, lD = 15A (Note 1) IRF142


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PDF IRF150 IRF152 IRF140 IRF142 VN1000A IRF130 VN1001A IRF132 IRF120 IRF122 VN64GA IRF142 IRF140 IRF540 75 LS 541 IRF143 Part number 543 20 018 00 IRF141 IRF132 IRF120
IRF540

Abstract:
Text: (br)dss Drain Source Breakdown Voltage1 IRF140/142/540/542 IRF141/143/ 541 /543 V Vgs = 0 V, lD = 250 , Voltage 2.0 4.0 V ld = 250 jiA, Vds = Vgs R[JS(on) Static Drain-Source On-Resistance2 IRF140/141/540/ 541 , IRF140/141/540/ 541 IRF142/143/542/543 2.0 2.0 2.5 2.3 V V ls = 27 A; VGS = 0 V ls = 24 A; VGS = 0 V trr


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PDF 34feitib74 IRF140-143/IRF540-543 O-22QAB IRF140 IRF141 IRF142 IRF143 IRF540 IRF541 IRF542 irf540 TTL IRF5405 LEM 543 24A15 IRF140-143 IRF1401 irf540 27 MHz irf540 circuit diagram
Irf540

Abstract:
Text: , Vdd = 25V, RG= 2 5 f t Starting T ,= 2 5 °C ig SAMSUNG Electronics 132 IRF540/ 541 /542/543 , 41 SAMSUNG Electronics 133 IRF540/ 541 /542/543 N-CHANNEL POWER MOSFETS SOURCE-DRAIN , Normalized On-Resistance Vs. Temperature eg SAMSUNG Electronics 135 IRF540/ 541 /542/543 N-CHANNEL


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PDF IRF540/541Z542/543 IRF540 IRF541 IRF542 IRF543 IRF540/541/542/543 IRF540-3 T1 IRF540 IRF540 Rg IRF540 n-channel MOSFET IRF540 mosfet with maximum VDS 30 V irf540 ir
irf540 switch

Abstract:
Text: r Z 7 SCS-THOM SON ^7#TM M©»H(LIËT[iMO(g§ IRF 540/FI- 541 /FI IRF 542/FI-543/FI N - CHANNEL , IRF 542 541 543 541 FI 542FI 543FI 80 100 80 100 80 80 ±2 0 100 110 110 100 100 110 110 100 542 541 543 540 28 25 25 28 17 17 20 20 540FI 541 FI 542FI 543FI 14 14 15 15 9 8 8 9 ISOWATT22Û TO-220 40 125 , 1988 1/6 295 IRF 540/FI - 541 /FI - 542/FI - 543/FI THERMAL DA TA R,hj. case Thermal resistance , IRF540/ 541 /540FI/541FI for IRF542/543/542FI/543FI 2 28 25 4 V A A for IRF540/ 541 /540FI/ 541


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PDF 540/FI-541/FI 542/FI-543/FI IRF540 IRF540FI IRF541 IRF541FI IRF542 IRF542FI IRF543 IRF543FI irf540 switch transistor irf 540 IRF 540 irf transistors Application Note of IRF540 irf540 circuit diagram a irf 540 transistor F 540 NS
541 transistor

Abstract:
Text: r Z J SGS-THOMSON * 7 #TM [ « » l i L E P 'OMOigS IRF 540/FI- 541 /FI IRF 542/FI-543/FI N - , factor Storage temperature Max. operating junction temperature IRF 543 541 542 543FI 541 FI 542FI 80 80 100 80 80 100 ±20 100 110 110 100 110 100 110 100 540 542 543 541 25 28 28 25 17 20 17 20 543FI 540FI 541 FI 542FI 14 14 15 15 8 9 9 8 ISOWATT22Û TO-220 125 40 1 0.32 - 5 5 to 150 150 V V V A A A A , 541 /FI - 542/FI - 543/FI THERMAL DA TA Thermal resistance junction-case Rthc-s Thermal resistance


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PDF 540/FI-541/FI 542/FI-543/FI IRF540 IRF540FI IRF541 IRF541FI IRF542 IRF542FI IRF543 IRF543FI 541 transistor irf540 switch transistor 541 Application Note of IRF540 542 transistor transistor irf 540
irf540 equivalent

Abstract:
Text: , 542 . 100V IRF141,143, 541 ,543 . . 60V Drain-Gate Voltage IRF140,142,540,542 . 100V IRF141,143, 541 ,543 . 60V Drain Current Continuous IRF140,141,540, 541 .± 27A IRF142,143 , , 541 27 A VDS = 25V. Vns = 10V (Note 1) IRF142, 143 IRF542, 543 24 Static Drain-Source On-State 'DS(on) Resistance IRF140, 141 IRF540, 541 0.07 0.085 Si VGS = 10V, lD = 15A (Note 1) IRF142


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PDF O-220 VN1000D IRF522 VN1000A IRF540 IRF632 IRF640 irf540 equivalent IRF541 equivalent vn89af equivalent IRF540 vn0106n1 VN0109n5 IRF520 equivalent IRF240 IRF232
RF540

Abstract:
Text: 3QE ]> ■7=12=1537 002=1777 b ■T-'SV 13 SGS-THOMSON IRF 540/FI- 541 /FI IRF 542/FI-543/FI , RATINGS IRF T0-220 540 541 542 543 ISOWATT220 540FI 541 Fl 542FI 543FI Vos * Drain-source , , clamped (L= 100 ¡M) 110 110 100 100 A 540 541 542 543 Id Drain current (cont.) at Tc= 25°C 28 28 25 25 A Id Drain current (cont.) at Tc= 100°C 20 20 17 17 A 540FI 541 Fl 542Fl 543FI Id" Drain , ISOWATT22Q on this datasheet. June 1988 1/6 295 IRF 540/FI ■541 /Fl ■542/FI ■543/FI_S G


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PDF 540/FI-541/FI 542/FI-543/FI IRF540 IRF540FI IRF541 IRF541FI IRF542 IRF542FI IRF543 IRF543FI RF540 b17a q02c transistor s43 IRF540 application irf 540
IRF541

Abstract:
Text: Range IRF Symbol Vd s s Vd g r Vg s Id 540 100 100 541 60 60 ±20 27 17 108 125 1 - 5 5 to 150 24 15 96


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PDF IRF540 IRF541 IRF542 IRF541. IRF540 motorola motorola irf542 mtp25n10 IRF541 motorola
SGSP3055

Abstract:
Text: 559 547 547 583 583 541 541 595 595 379 379 379 577 589 577 577 583 583 273 273 279 279 261 261 261 , 523 517 331 523 529 529 535 535 541 541 553 547 547 547 553 559 559 565 565 571 571 267 267 583 577


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PDF 2SK295 2SK296 2SK308 2SK310 2SK311 2SK312 2SK313 2SK319 2SK320 2SK324 SGSP3055 IRF722P IRF732P IRF540FI irf522p IRF510 1rfp450 MTP20N10 IRF730P SGSP312
IRF5405

Abstract:
Text: tin u o u s , T c = 25°C Id Vg s ±20 Vdc A de Symbol V DSS VDG R IRF 540 100 100 541 60 60


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PDF IRF540 IRF541 IRF542 21A-04 O-220AB) IRF5405 IRF542 mtp25n10 IRF 540
TP8N10

Abstract:
Text: 367 379 547 559 547 547 583 583 541 541 595 595 379 379 379 577 589 577 577 583 583 273 273 279 279 , 307 307 493 493 493 499 505 505 511 511 517 523 517 331 523 529 529 535 535 541 541 553 547 547 547


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PDF 2SK295 2SK296 2SK308 2SK310 2SK311 2SK312 2SK313 2SK319 2SK320 2SK324 TP8N10 th15n20 TH7N50 TP10N05 TP4N10 IRFP350FI TP5N35 TP4N45 tp5n40 TP3N40
IRF5405

Abstract:
Text: IRF540. 541 P84EL2,K2 27 AMPERES 100, 60 VOLTS rDS(ON) = 0.085 n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device rugged-ness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear transfer characteristics


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PDF IRF540 P84EL2 00A//isec, IRF5405 I084 D84EL2 D84EK2 irf540 27 MHz IRF540 application IRF541
1RF540

Abstract:
Text: M3 D2 2 7 1 0DS3c na 501 HAS ® HARRIS IR F540/ 541 /542/543 IRF540R/541R/542R/543R N-Channel Power MOSFETs Avalanche Energy Rated* Package T O -2 2 0 A B TOP VIEW A u g u st 1991 Features · 25A and 28A, 80V - 100V · fD S (°n) = 0 .0 7 7 fl and 0 .1 0 fi · Single Pulse , q s = OV, - T j = + 1 2 5 °C O n-State Drain Current (Note 2) IR F540/ 541 , IRF540R/541R IRF542/543, IRF542R/543R Static D rain-Source O n-State Resistance (Note 2) IR F540/ 541 , IR F540R/541R IR


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PDF F540/541/542/543 IRF540R/541R/542R/543R IRF540, IRF541, IRF542, IRF543 IRF540R, IRF541R, IRF542R IRF543R 1RF540 IRF540R IRF 543 MOSFET F542R IRF540 n-channel MOSFET IP28A IRF540 d2 package
2002 - fqp60n06

Abstract:
Text: 6608 Fax: +1 858 452 0401 Corvalis Tel. +1 541 754 8192 Fax +1 541 754 8262 San Jose Tel. +1


Original
PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Irf640 irf9540

Abstract:
Text: 481 486 491 496 501 506 511 516 521 526 531 536 511 516 521 526 531 536 541 545 549 553 557 561 561


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PDF 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 Irf640 irf9540 IRFR220TF IRF510 mosfet irf640 2n3904 2n3906 STR 456 IRFR9120-TF 451 MOSFET KSP44 IRF830 IRFR120TF
IRF9210

Abstract:
Text: 511 516 516 521 521 526 526 531 531 536 536 541 541 545 545 549 549 553 553 557 561 561 TR


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PDF 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 IRF9210 darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F KSH117-1 NPN Transistor 600V 5A TO-220 transistor irf620
1999 - IRF540 smd

Abstract:
Text: No file text available


Original
PDF IRF540, IRF540S IRF540 O220AB) IRF540S OT404 OT78127 OT404 IRF540 smd IRF540 application IRF540 application note Application Note of IRF540 Applications Note of IRF540 IRF540 cross reference 43118 irf540 27 MHz
IRFS40

Abstract:
Text: 2 3 H A F R F R IS August 1991 /R F 540/ 541 /5 4 2/5 4 3 IH F540R /541R /542R /543R N-Channel Power MOSFETs Avalanche Energy Rated* Package T 0 -2 2 0 A B TOP VIEW Features · 25A and 28A, 80V - 100V · fD S (°n) = 0 .0 7 7 0 and 0 .1 0 ÎÎ · Single Pulse Avalanche Energy Rated* · SOA is , 4.0 500 -5 0 0 250 1000 toss Vds T j = + 1 25°C O n-State Drain Current (Note 2) IR F540/ 541 , IRF540R/541R IR F542/543, IRF542R/543R Static Drain-Source On-State Resistance (Note 2) IR F540/ 541


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PDF F540R /541R /542R /543R IRFS40, IRF541, IRF542, IRF543 1RF540R, IRF541R, IRFS40 IRF 543 MOSFET IRF540R IRF 1450 IRF541R RF540
1997 - IRF540 mosfet with maximum VDS 12v

Abstract:
Text: No file text available


Original
PDF IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM IRF540 mosfet with maximum VDS 12v IRF540 Applications Note of IRF540 MOSFET IRF540 TA17421 IRF540 mosfet irf541 irf540 pdf switch IRF543 irf5401
irf540

Abstract:
Text: No file text available


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PDF IRF540 IRF540FI GC36230 IRF540/FI GC36B60 GC36270 irf540 circuit diagram IRF540 Rg IRF540FI
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