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Part Manufacturer Description Datasheet Download Buy Part
IRF530STRLPBF Vishay Siliconix Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3
IRF530STRRPBF Vishay Siliconix Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3
IRF530SPBF Vishay Siliconix Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3
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Search Stock (19)

  You can filter table by choosing multiple options from dropdownShowing 19 results of 19
Part Manufacturer Supplier Stock Best Price Price Each Buy Part
IRF530S International Rectifier Bristol Electronics 41 - -
IRF530SPBF International Rectifier Bristol Electronics 835 - -
IRF530SPBF Vishay Intertechnologies Farnell element14 1,234 £1.10 £0.68
IRF530SPBF Vishay Intertechnologies element14 Asia-Pacific 1,356 $2.50 $1.00
IRF530SPBF Vishay Intertechnologies Chip1Stop 975 $0.98 $0.75
IRF530SPBF International Rectifier ComS.I.T. 1,000 - -
IRF530SPBF Vishay Intertechnologies Newark element14 436 $1.90 $0.82
IRF530SPBF Vishay Intertechnologies Future Electronics 745 $0.93 $0.69
IRF530SPBF Vishay Intertechnologies Avnet - - -
IRF530SPBF Vishay Intertechnologies Avnet - $1.90 $0.88
IRF530SPBF Vishay Siliconix New Advantage Corporation 596 $1.86 $1.69
IRF530SPBF. Vishay Intertechnologies element14 Asia-Pacific 436 $2.42 $0.97
IRF530STRL International Rectifier Bristol Electronics 2,231 - -
IRF530STRLPBF Vishay Intertechnologies Avnet - - -
IRF530STRLPBF Vishay Intertechnologies Chip1Stop 682 $1.00 $0.83
IRF530STRLPBF Vishay Intertechnologies Avnet - €0.62 €0.31
IRF530STRRPBF Vishay Intertechnologies Avnet - €0.62 €0.31
IRF530STRRPBF Vishay Intertechnologies Avnet - - -
IRF530STRRPBF Vishay Siliconix New Advantage Corporation 1,600 $1.40 $1.27

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IRF530S datasheet (15)

Part Manufacturer Description Type PDF
IRF530S Toshiba Power MOSFETs Cross Reference Guide Original PDF
IRF530S Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 14A D2PAK Original PDF
IRF530S International Rectifier HEXFET Power Mosfet Scan PDF
IRF530S International Rectifier HEXFET Power MOSFET Scan PDF
IRF530S Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
IRF530SPBF International Rectifier HEXFET Power MOSFET Original PDF
IRF530SPBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 14A D2PAK Original PDF
IRF530STRL Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 14A D2PAK Original PDF
IRF530STRL International Rectifier 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Scan PDF
IRF530STRL Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
IRF530STRLPBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 14A D2PAK Original PDF
IRF530STRR Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 14A D2PAK Original PDF
IRF530STRR International Rectifier 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Scan PDF
IRF530STRR Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
IRF530STRRPBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 14A D2PAK Original PDF

IRF530S Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2008 - smd marking VB DIODE

Abstract: SMD220 IRF530S
Text: ORDERING INFORMATION Package Lead (Pb)-free SMD-220 IRF530SPbF SiHF530S-E3 IRF530S SnPb Note a. See device orientation. SiHF530S SMD-220 IRF530STRLPbFa SiHF530STL-E3a IRF530STRLa SiHF530STLa SMD-220 IRF530STRRPbFa SiHF530STR-E3a IRF530STRRa SiHF530STRa ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER , IRF530S , SiHF530S Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , IRF530S , SiHF530S Vishay Siliconix ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted


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PDF IRF530S, SiHF530S SMD-220 12-Mar-07 smd marking VB DIODE SMD220 IRF530S
IRF530S

Abstract: DIODE smd marking A3 AN-994 SMD-220 pd9897
Text: International S Rectifier PD-9.897 IRF530S HEXFET® Power MOSFET Surface Mount Available in , #AN-994. 143 IRF530S [ëïr Electrical Characteristics @ Tj = 25 C (unless otherwise specified , On-Resistance Vs. Temperature 145 IRF530S Vqs. Drain-to-Source Voltage (volts) Fig 5. Typical Capacitance Vs , Temperature IRF530S -Vdd Fig 10a. Switching Time Test Circuit td(on) tr td(off) t( Fig 10b. Switching , Effective Transient Thermal Impedance, Junction-to-Case 147 IRF530S Vary tp to obtain required Ias T VDD


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PDF IRF530S SMD-220 IRF530S DIODE smd marking A3 AN-994 pd9897
2010 - IRF530S

Abstract: SiHF530S SiHF530S-E3 IRF530STRL
Text: )-free SnPb D2PAK (TO-263) SiHF530S-GE3 IRF530SPbF SiHF530S-E3 IRF530S SiHF530S D2PAK (TO-263) SiHF530STRL-GE3a IRF530STRLPbFa SiHF530STL-E3a IRF530STRLa SiHF530STLa D2PAK (TO-263) SiHF530STRR-GE3a IRF530STRRPbFa SiHF530STR-E3a IRF530STRRa SiHF530STRa Note a. See device orientation. ABSOLUTE MAXIMUM , IRF530S , SiHF530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 , , exemptions may apply Document Number: 91020 S10-1442-Rev. B, 05-Jul-10 www.vishay.com 1 IRF530S


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PDF IRF530S, SiHF530S O-263) 2002/95/EC 18-Jul-08 IRF530S SiHF530S-E3 IRF530STRL
IRF530S

Abstract: SiHF530S SiHF530S-E3 910-20-11
Text: )-free SnPb D2PAK (TO-263) SiHF530S-GE3 IRF530SPbF SiHF530S-E3 IRF530S SiHF530S D2PAK (TO-263) SiHF530STRL-GE3a IRF530STRLPbFa SiHF530STL-E3a IRF530STRLa SiHF530STLa D2PAK (TO-263) SiHF530STRR-GE3a IRF530STRRPbFa SiHF530STR-E3a IRF530STRRa SiHF530STRa Note a. See device orientation. ABSOLUTE MAXIMUM , IRF530S , SiHF530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 , , exemptions may apply Document Number: 91020 S10-1442-Rev. B, 05-Jul-10 www.vishay.com 1 IRF530S


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PDF IRF530S, SiHF530S O-263) 2002/95/EC 11-Mar-11 IRF530S SiHF530S-E3 910-20-11
2011 - Not Available

Abstract: No abstract text available
Text: (Pb)-free D2PAK (TO-263) SiHF530S-GE3 IRF530SPbF SiHF530S-E3 D2PAK (TO-263) SiHF530STRL-GE3a IRF530STRLPbFa SiHF530STL-E3a D2PAK (TO-263) SiHF530STRR-GE3a IRF530STRRPbFa SiHF530STR-E3a Note a , IRF530S , SiHF530S D FEATURES D2PAK (TO-263) • Halogen-free According to IEC 61249-2-21 , PCB (FR-4 or G-10 material). 2014-8-28 1 www.kersemi.com IRF530S , SiHF530S THERMAL , . Pulse width  300 μs; duty cycle  2 %. 2014-8-28 2 www.kersemi.com IRF530S , SiHF530S


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PDF IRF530S, SiHF530S O-263) 2002/95/EC S-82110-Rev. 15-Sep-08 5M-1994. O-263AB.
2009 - IRF530SPBF

Abstract: IRF530S SiHF530S SiHF530S-E3 IRF530STRLPBF IRF530STRL
Text: )-free SnPb D2PAK (TO-263) IRF530SPbF SiHF530S-E3 IRF530S SiHF530S D2PAK (TO-263) IRF530STRLPbFa SiHF530STL-E3a IRF530STRLa SiHF530STLa D2PAK (TO-263) IRF530STRRPbFa SiHF530STR-E3a IRF530STRRa SiHF530STRa Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless , IRF530S , SiHF530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 , may apply Document Number: 91020 S-82996-Rev. A, 19-Jan-09 www.vishay.com 1 IRF530S


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PDF IRF530S, SiHF530S O-263) 18-Jul-08 IRF530SPBF IRF530S SiHF530S-E3 IRF530STRLPBF IRF530STRL
Not Available

Abstract: No abstract text available
Text: bSE ] ) International k ® Rectifier 4655452 0014bti2 3bc H I N R PD-9.897 l IRF530S , °C/W INTERNATIONAL RECTIFIER b5E 4855452 0Q14bb3 2T5 « I N R J > IRF530S IO R , IRF530S 10"1 10° DATA SHEETS I«R 101 V qs , Drain-to-Source Voltage (volts) V qs , INTERNATIONAL RECTIFIER b5E ] ■> IRF530S _ H ! Qq , Total Gate Charge (nC) V qs , m im IRF530S Rd Fig 10a. Switching Time Test Circuit DATA SHEETS I— Fig 9


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PDF 0014bti2 IRF530S SMD-220
2008 - IRF530S

Abstract: No abstract text available
Text: ORDERING INFORMATION Package Lead (Pb)-free SMD-220 IRF530SPbF SiHF530S-E3 IRF530S SnPb Note a. See device orientation. SiHF530S SMD-220 IRF530STRLPbFa SiHF530STL-E3a IRF530STRLa SiHF530STLa SMD-220 IRF530STRRPbFa SiHF530STR-E3a IRF530STRRa SiHF530STRa ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER , IRF530S , SiHF530S Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , IRF530S , SiHF530S Vishay Siliconix ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted


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PDF IRF530S, SiHF530S SMD-220 18-Jul-08 IRF530S
SMD diode C5C

Abstract: smd diode 1d PD9897 9897 tn 0/cxd 9897 tn cit smd SMD-220 IRF530S 1rf530 AN-994
Text: International Säg Rectifier PD-9.897 IRF530S HEXFET® Power MOSFET • Surface Mount • Available in Tape & Reel • Dynamic dv/cit Rating • Repetitive Avalanche Rated • 175°C Operating , %. 144 I«R, IRF530S us q. E < c m O c 'as i— a 10° 10"s 10° 101 VDS, Drain-to-Source Voltage (volts , id3 VDSl Drain-to-Source Voltage (volts) Fig 8. Maximum Safe Operating Area 146 TOR IRF530S to cl c 05 , Effective Transient Thermal Impedance, Junction-to-Case 147 IRF530S Vary tp Io obtain V°s ^ required Ias


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PDF IRF530S SMD-220 SMD diode C5C smd diode 1d PD9897 9897 tn 0/cxd 9897 tn cit smd 1rf530 AN-994
F530S

Abstract: IRF530S TO263A
Text: D2PAK (TO-263A) THIS IS AN IRF530S WIT H LOT CODE 8024 AS S EMBLED ON WW 02, 2000 IN THE AS S EMBLY LINE "L" INT ERNATIONAL RECTIFIER LOGO PART NUMBER F530S DAT E CODE YEAR 0 = 2000 WEEK 02 LINE L AS S EMBLY LOT CODE For GB Production THIS IS AN IRF530S WIT H LOT CODE 8024 AS S EMBLED ON WW 02, 2000 IN THE AS S EMBLY LINE "L" INT ERNATIONAL RECTIFIER LOGO PART NUMBER F530S DAT E CODE LOT CODE www.irf.com 5 International Rectifier


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PDF O-263A) IRF530S F530S F530S TO263A
2012 - IRF530S

Abstract: No abstract text available
Text: -263) SiHF530STRL-GE3a IRF530STRLPbFa SiHF530STL-E3a D2PAK (TO-263) SiHF530STRR-GE3a IRF530STRRPbFa SiHF530STR-E3a , IRF530S , SiHF530S Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , . D2PAK (TO-263) SiHF530S-GE3 IRF530SPbF SiHF530S-E3 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless , SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF530S , SiHF530S Vishay , DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF530S , SiHF530S Vishay Siliconix TYPICAL


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PDF IRF530S, SiHF530S 2002/95/EC O-263) 11-Mar-11 IRF530S
2011 - IRF530S

Abstract: No abstract text available
Text: -263) SiHF530STRL-GE3a IRF530STRLPbFa SiHF530STL-E3a D2PAK (TO-263) SiHF530STRR-GE3a IRF530STRRPbFa SiHF530STR-E3a , IRF530S , SiHF530S Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , . D2PAK (TO-263) SiHF530S-GE3 IRF530SPbF SiHF530S-E3 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless , SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF530S , SiHF530S Vishay , DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF530S , SiHF530S Vishay Siliconix TYPICAL


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PDF IRF530S, SiHF530S 2002/95/EC O-263) 11-Mar-11 IRF530S
2015 - IRF530S

Abstract: No abstract text available
Text: Lead (Pb)-free D2PAK (TO-263) SiHF530S-GE3 IRF530SPbF SiHF530S-E3 D2PAK (TO-263) SiHF530STRL-GE3a IRF530STRLPbFa SiHF530STL-E3a D2PAK (TO-263) SiHF530STRR-GE3a IRF530STRRPbFa , IRF530S , SiHF530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) â , TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF530S , SiHF530S Vishay Siliconix , ?91000 IRF530S , SiHF530S Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted VGS 15 V


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PDF IRF530S, SiHF530S 2002/95/EC O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 IRF530S
2012 - IRF530S

Abstract: No abstract text available
Text: -263) SiHF530STRL-GE3a IRF530STRLPbFa SiHF530STL-E3a D2PAK (TO-263) SiHF530STRR-GE3a IRF530STRRPbFa SiHF530STR-E3a , IRF530S , SiHF530S Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , . D2PAK (TO-263) SiHF530S-GE3 IRF530SPbF SiHF530S-E3 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless , SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF530S , SiHF530S Vishay , DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF530S , SiHF530S Vishay Siliconix TYPICAL


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PDF IRF530S, SiHF530S 2002/95/EC O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRF530S
1996 - TO-263AB heatsink

Abstract: IRF530S ir 941
Text: IRF530S WITH ASSEMBLY LOT CODE 9B1M INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE A PART , -263AB EXAMPLE : THIS IS AN IRF530S WITH ASSEMBLY LOT CODE 9B1M INTERNATIONAL RECTIFIER LOGO ASSEMBLY


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PDF IRL2910S O-263AB O-263AB IRF530S F530S TO-263AB heatsink IRF530S ir 941
2012 - LTC4252A-2IMS

Abstract: marking ltrt LTC4252-1CMS8 ltafx
Text: CT 0.33F * VOUT Q1 IRF530S LTC4252-1 UV SS GATE 5V/DIV RD 1M GATE VEE , , INC RECOMMENDED FOR HARSH ENVIRONMENTS RC 10 Q1 IRF530S RD 1M 425212 F02 Figure 2 , DDZ13B* CL 100F RD 1M 6 Q1 IRF530S 4 5 *DIODES, INC RECOMMENDED FOR HARSH , VEE SENSE EN * RD 1M 6 Q1 IRF530S 4 5 ­48V * M0C207 Q2: MMBT5551LT1


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PDF LTC4252-1/LTC4252-2 LTC4252A-1/LTC4252A-2 LTC4252B/LTC4252C LTC4214 LTC4220 LT4250 LTC4251/LTC4251-1 OT-23 LTC4253 425212fd LTC4252A-2IMS marking ltrt LTC4252-1CMS8 ltafx
2001 - DDZ13B

Abstract: ltAGF LTC4252-1CMS8 MOSFET IRF740 as switch marking ltrt LTC4252-2 LTC4252-1 LTC4252 IRF530S LTC4252A-2CMS
Text: CT 0.33F * VOUT Q1 IRF530S LTC4252-1 UV SS GATE 5V/DIV RD 1M GATE VEE , , INC RECOMMENDED FOR HARSH ENVIRONMENTS RC 10 Q1 IRF530S RD 1M 425212 F02 Figure 2 , DDZ13B* CL 100F RD 1M 6 Q1 IRF530S 4 5 *DIODES, INC RECOMMENDED FOR HARSH , VEE SENSE EN * RD 1M 6 Q1 IRF530S 4 5 ­48V * M0C207 Q2: MMBT5551LT1


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PDF LTC4252-1/LTC4252-2 LTC4252A-1/LTC4252A-2 LTC4214 LTC4220 LT4250 LTC4251/LTC4251-1 OT-23 LTC4253 425212fc DDZ13B ltAGF LTC4252-1CMS8 MOSFET IRF740 as switch marking ltrt LTC4252-2 LTC4252-1 LTC4252 IRF530S LTC4252A-2CMS
2001 - ltwq

Abstract: ltafx irf740 mosfet snubber capacitor 68NF IRF530S LTC4252 LTC4252-1 LTC4252-2 LTC4252-1CMS8
Text: SENSE 2.5A/DIV VOUT 20V/DIV DRAIN TIMER CT 0.33µF VOUT Q1 IRF530S * UV GATE , CT 0.68µF CC 10nF RC 10 RD 1M LONG ­48V RS 0.02 Q1 IRF530S 4252-1/2 F02 , LOAD R5 2.2k SENSE * 2 7 RD 1M 6 Q1 IRF530S 4 RC 10 CC 18nF RS 0.02 , 2.2k SENSE * 2 7 RD 1M 6 Q1 IRF530S 4 RC 10 CC 10nF RS 0.02 4252-1/2


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PDF LTC4252-1/LTC4252-2 LTC4252A-1/LTC4252A-2 LTC4214 LTC4220 LT4250 LTC4251/LTC4251-1 OT-23 LTC4253 425212fb ltwq ltafx irf740 mosfet snubber capacitor 68NF IRF530S LTC4252 LTC4252-1 LTC4252-2 LTC4252-1CMS8
2001 - MOSFET IRF740 as switch

Abstract: ltafx mosfet Gate Drive 4-pin optoisolator 8 pin 4v power supply converter irf740 mosfet LTC4252A-1CMS ltwq uv 18a IRF530S
Text: Q1 IRF530S * UV GATE 5V/DIV LOAD R3 5.1k LTC4252-1 R2 32.4k 1% CL 100µF , ­48V RS 0.02 Q1 IRF530S 4252-1/2 F02 Figure 2. ­48V, 2.5A Hot Swap Controller 425212fa , RD 1M 6 Q1 IRF530S 4 RC 10 CC 18nF RS 0.02 4252-1/2 F03 ­48V * M0C207 Q2 , CSS 68nF GATE VEE 5 LOAD R5 2.2k SENSE * 2 7 RD 1M 6 Q1 IRF530S 4


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PDF LTC4252-1/LTC4252-2 LTC4252A-1/LTC4252A-2 LTC4252A) LTC4252-1/LTC4252A-1: LTC4252-2: 10-Pin LTC4220 LT4250 LTC4251/LTC4251-1 OT-23 MOSFET IRF740 as switch ltafx mosfet Gate Drive 4-pin optoisolator 8 pin 4v power supply converter irf740 mosfet LTC4252A-1CMS ltwq uv 18a IRF530S
Not Available

Abstract: No abstract text available
Text: DRAIN TIMER CT 0.33µF * VOUT Q1 IRF530S LTC4252-1 UV SS RD 1M GATE VEE , IRF530S RD 1M 425212 F02 Figure 2. –48V, 2.5A Hot Swap Controller 425212fd 12 LTC4252 , * CL 100µF RD 1M 6 Q1 IRF530S 4 5 *DIODES, INC †RECOMMENDED FOR HARSH , 0.68µF C2 10nF CSS 68nF GATE VEE SENSE EN * RD 1M 6 Q1 IRF530S 4 5 â


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PDF LTC4252-1/LTC4252-2 LTC4252A-1/LTC4252A-2 LTC4252B/LTC4252C LTC4252A) LTC4252-1/LTC4252A-1: LTC4252-oltage LTC4220 LT4250 LTC4251/LTC4251-1 OT-23
2012 - LTC4252BIMS-2

Abstract: LTC4252CIMS LTGF
Text: TIMER CT 0.33µF C1 10nF * VOUT SS RD 1M Q1 IRF530S GATE VEE SENSE CSS 68nF , IRF530S RD 1M 4252B12 F02 Figure 2. –48V, 2.5A Hot Swap Controller 4252b12f 12 LTC4252B , * CL 100µF RD 1M 6 Q1 IRF530S 4 5 *DIODES, INC †RECOMMENDED FOR HARSH , Q1 IRF530S 4 5 –48V * M0C207 Q2: MMBT5551LT1 LOAD R5 2.2k 2 7 + Q2


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PDF LTC4252B-1/LTC4252B-2 LTC4252C-1/LTC4252C-2 LTC4252C) LTC4252B-1/LTC4252C-1: LTC4252B-2/LTC4252C-2: 10-Pin LTC4220 LT4250 LTC4251B/ LTC4251B-1/ LTC4252BIMS-2 LTC4252CIMS LTGF
2012 - LTC4252BIMS-2

Abstract: LTC4252CIMS-2 LTC4252CCMS-1
Text: TIMER C1 10nF SS * VOUT Q1 IRF530S GATE VEE SENSE CSS 68nF SENSE 2.5A , RC 10 Q1 IRF530S RD 1M 4252B12 F02 Figure 2.­48V, 2.5A Hot Swap Controller 4252b12f , IRF530S 4 5 *DIODES, INC RECOMMENDED FOR HARSH ENVIRONMENTS RC 10 CC 18nF 4252B12 F03 , 2.2k EN * 2 7 CL 100µF RD 1M 6 Q1 IRF530S 4 5 *DIODES, INC


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PDF LTC4252B-1/LTC4252B-2 LTC4252C-1/LTC4252C-2 LTC4252C) LTC4252B-1/LTC4252C-1: LTC4252B-2/LTC4252C-2: 10-Pin voLTC4214 LTC4220 LT4250 LTC4251B/ LTC4252BIMS-2 LTC4252CIMS-2 LTC4252CCMS-1
F530S

Abstract: IRF540Z IRF540ZL IRF540ZS IRF540 IRF530S
Text: Dimensions are shown in millimeters (inches) D2Pak Part Marking Information T HIS IS AN IRF530S WIT H , GB Production T HIS IS AN IRF530S WIT H LOT CODE 8024 AS S EMBLED ON WW 02, 2000 IN T HE AS S


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PDF IRF540Z IRF540ZS IRF540ZL O-220AB AN-994. F530S IRF540Z IRF540ZL IRF540ZS IRF540 IRF530S
2001 - Not Available

Abstract: No abstract text available
Text: DRAIN GATE VEE SENSE R1 402k 1% RD 1M Q1 IRF530S RC 10 CC 18nF RS 0.02 PWRGD 10V/DIV 1ms/DIV , CC 10nF ­48V RS 0.02 *DIODES, INC RECOMMENDED FOR HARSH ENVIRONMENTS Q1 IRF530S 425212 , 100µF + LOAD EN ­48RTN (SHORT PIN) * RD 1M Q1 IRF530S RC 10 CC 18nF 425212 F03 C2 10nF , 7 6 4 RD 1M * 3 CT SS 0.68µF C2 10nF Q1 IRF530S RC 10 CC 10nF 425212 F04 CSS 68nF RS


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PDF LTC4252-1/LTC4252-2 LTC4252A-1/LTC4252A-2 LTC4252A) LTC4252-1/LTC4252A-1: LTC4252-2/LTC4252A-2: 10-Pin OT-23 425212fe com/LTC4252-1
8024

Abstract: IRF530S TO-263A D2PAK
Text: D 2 Pak (TO-263A) EXAMPLE: THIS IS AN IRF530S WITH LOT CODE 8024 ASSEMBLED ON WW 02, 2000 IN THE ASSEMBLY LINE "L" INTERNATIONAL RECTIFIER x LOGO V ASSEMBLY LOT CODE PART NUMBER DATE CODE YEAR 0 = 2000 WEEK 02 LINEL


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PDF O-263A) IRF530S 8024 TO-263A D2PAK
Supplyframe Tracking Pixel