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LM3550SP/NOPB Texas Instruments A Flash LED Driver with Automatic Vf and ESR Detection for Mobile Camera Systems 20-UQFN -30 to 85
LM3550SPX/NOPB Texas Instruments A Flash LED Driver with Automatic Vf and ESR Detection for Mobile Camera Systems 20-UQFN -30 to 85

IRF5305 equivalent Datasheets Context Search

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Not Available

Abstract: No abstract text available
Text: I i .•_ I PRELIMINARY International I©R Rectifier P D 9 .1 3 8 5 IRF5305 , International IQR Rectifier -Iq , Drain-to-Source Current (A) IRF5305 -VDS , Drain-to-Source Voltage , , Junction Temperature (°C) Fig 4. Normalized On-Resistance Vs. Temperature IRF5305 International , IRF5305 -+ Vqd E < < D o e Fig 10a. Switching Time Test Circuit CO Q Q k i(o n ) 25 , , Junction-to-Case 4A55452 0 02 4 2 3 * 1 250 IRF5305 International IOR Rectifier Ias


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PDF IRF5305 6C413 554S2 D024242
1996 - IRF5305

Abstract: No abstract text available
Text: Previous Datasheet Index Next Data Sheet PRELIMINARY PD 9.1385 IRF5305 HEXFET , ­­­ 62 °C/W Previous Datasheet Index Next Data Sheet IRF5305 Electrical , (See Figure 12) To Order D S Previous Datasheet Index Next Data Sheet IRF5305 , A 100 120 140 160 180 Previous Datasheet Index Next Data Sheet IRF5305 C , C a p , IRF5305 RD VDS 30 VGS + -ID , D ra in C u rre n t (A m p s ) D.U.T. RG 25 VDD


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PDF IRF5305 O-220 IRF5305
Not Available

Abstract: No abstract text available
Text: PD - 91385B IRF5305 HEXFET® Power MOSFET l l l l l l Advanced Process Technology , IRF5305 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) RDS(on) VGS(th) gfs , ; duty cycle ≤ 2%. RG = 25Ω, IAS = -16A. (See Figure 12) 2 www.irf.com IRF5305 1000 , perature (°C ) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF5305 C, C apacitanc e (pF , ) Fig 8. Maximum Safe Operating Area www.irf.com A IRF5305 RD VDS 35 VGS 30 D.U.T


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PDF 91385B IRF5305 O-220
2000 - IRF5305

Abstract: 55V MOSFET P-Channel k 524 ir
Text: PD - 91385B IRF5305 HEXFET® Power MOSFET l l l l l l Advanced Process Technology , Typ. Max. Units ­­­ 0.50 ­­­ 1.4 ­­­ 62 °C/W 3/3/00 IRF5305 Electrical , Figure 12) 2 www.irf.com IRF5305 1000 1000 VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - , . Temperature 3 IRF5305 C, C apacitanc e (pF ) 2000 C iss V GS C iss C rs s C o ss = = , IRF5305 RD VDS 35 VGS 30 D.U.T. RG + -ID , Drain Current (A) VDD 25 -10V


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PDF 91385B IRF5305 O-220 IRF5305 55V MOSFET P-Channel k 524 ir
irf5305

Abstract: .C36 marking
Text: IRF5305 HEXFET® Power MOSFET Voss = -55V RDS(on) = 0.060 lD = -31A Description Fifth Generation , R Rectifier IRF5305 Electrical Characteristics @ Tj = 25°C (unless otherwise specified , ; duty cycle < 2%. 75°C www.irf.com C-37 IRF5305 International DOR Rectifier -lD , International IO R Rectifier IRF5305 2500 2000 uT Ql g tz ca 1500 o 03 O ö co , C-39 IRF5305 700 International IQ R Rectifier Id I -6.6A| .1 1 A 1 -16A e 600 r j


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PDF IRF5305 O-220 ----25V irf5305 .C36 marking
1997 - EK 110

Abstract: IRF5305
Text: PD - 9.1385A IRF5305 HEXFET® Power MOSFET l l l l l l Advanced Process Technology , Typ. Max. Units ­­­ 0.50 ­­­ 1.4 ­­­ 62 °C/W 8/25/97 IRF5305 Electrical , cycle 2%. D S IRF5305 1000 1000 VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - , IRF5305 C , C a p a c ita n c e (p F ) 2000 C is s V GS C is s C rs s C o ss 20 = 0 V , ) Fig 8. Maximum Safe Operating Area IRF5305 RD VDS 35 VGS 30 D.U.T. RG + -I D


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PDF IRF5305 O-220 EK 110 IRF5305
1999 - IRF5305

Abstract: EPF12 borg
Text: PD - 901385B IRF5305 HEXFET® Power MOSFET l l l l l l Advanced Process Technology Dynamic , /1/99 IRF5305 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS V , (See Figure 12) Pulse width 300µs; duty cycle 2%. 2 www.irf.com IRF5305 1000 VGS - , Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF5305 2500 2000 , Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF5305 VDS


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PDF 901385B IRF5305 O-220 IRF5305 EPF12 borg
2000 - Not Available

Abstract: No abstract text available
Text: IRF5305 TO-220AB l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175 , €“ 62 °C/W www.kersemi.com IRF5305 Electrical Characteristics @ TJ = 25°C (unless otherwise , (See Figure 12) 2014-8-9 2 www.kersemi.com IRF5305 1000 1000 VGS - 15V - 10V - , S , D rain-to-S ourc e V oltage (V ) 1 10 www.kersemi.com IRF5305 C, C apacitanc e , Source-Drain Diode Forward Voltage 2014-8-9 100 4 www.kersemi.com A IRF5305 RD VDS 35


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PDF IRF5305 O-220AB O-220
IRF5305

Abstract: No abstract text available
Text: PD - 91385B IRF5305 HEXFET® Power MOSFET l l l l l l Advanced Process Technology , Typ. Max. Units ­­­ 0.50 ­­­ 1.4 ­­­ 62 °C/W 3/3/00 IRF5305 Electrical , Figure 12) 2 www.irf.com IRF5305 1000 1000 VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - , . Temperature 3 IRF5305 C, C apacitanc e (pF ) 2000 C iss V GS C iss C rs s C o ss = = , IRF5305 RD VDS 35 VGS 30 D.U.T. RG + -ID , Drain Current (A) VDD 25 -10V


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PDF 91385B IRF5305 O-220 IRF5305
2000 - high power fet audio amplifier schematic

Abstract: 12 volt audio amplifier class D schematic TRANSISTOR SMD p1 IRF5305 150W TRANSISTOR AUDIO AMPLIFIER Speaker 80W LXE1711 SMD TRANSISTOR fet Transistor 03 smd smd transistor p5
Text: 1.0uF 50V R12 49.9 POS_HI_DRIVE Q3 C17 1.0uF C16 0.10uF VR1 1PMT4104 IRF5305 , VR3 1PMT4104 IRF5305 R24 10.0 R25 1.00K R26 R36 20.0 Q14 Q15 BSS138 , SOT23 General Purpose P Channel Transistor, FET, IRF5305 TO220 Power P Channel Transistor, FET


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PDF LXE1711-100 high power fet audio amplifier schematic 12 volt audio amplifier class D schematic TRANSISTOR SMD p1 IRF5305 150W TRANSISTOR AUDIO AMPLIFIER Speaker 80W LXE1711 SMD TRANSISTOR fet Transistor 03 smd smd transistor p5
p-CHANNEL POWER MOSFET 600v

Abstract: IXTP28P065T IXTH20P50P P channel MOSFET 10A 014 IR MOSFET Transistor IXTK32P60P IXTH16P60P IXTA76P10T IXTA36P15P ixtq
Text: (typ) nS 40 26 80 & TO-220 housing package. 30 20 180 60 10 IRF5305 40 , 31 120 120 IR - IRF5305 45 40 80 mOhms 46 Qg (typ) nC IXYS - IXTP32P05T 100 80 Trr (typ) nS 140 175 0 IXYS - IXTP32P05T IR - IRF5305 IXYS IXTP18P10T yielded , 20 60 Trr (typ) nS 70 40 IR - IRF5305 20 Id=28A, & TO-263 housing package. 140


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PDF -600v -150V p-CHANNEL POWER MOSFET 600v IXTP28P065T IXTH20P50P P channel MOSFET 10A 014 IR MOSFET Transistor IXTK32P60P IXTH16P60P IXTA76P10T IXTA36P15P ixtq
2000 - 12 volt audio amplifier class D schematic

Abstract: high power fet audio amplifier schematic TRANSISTOR SMD p1 3 volt audio amplifier class D schematic smd transistor Q5 200 watt audio amplifier ic 1 watt diode zener smd transistor p3 vr1 100k lin IRF5305
Text: 50V 10.0 R12 49.9 POS_HI_DRIVE Q3 C17 1.0uF C16 0.10uF VR1 1PMT4104 IRF5305 , 1PMT4104 C19 0.10uF IRF5305 R24 10.0 VR4 1PMT4106 R25 1.00K R26 R36 20.0 Q14 , Transistor, FET, NDS0605 SOT23 General Purpose P Channel Transistor, FET, IRF5305 TO220 Power P Channel


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PDF LXE1711-100 LX1711-100 12 volt audio amplifier class D schematic high power fet audio amplifier schematic TRANSISTOR SMD p1 3 volt audio amplifier class D schematic smd transistor Q5 200 watt audio amplifier ic 1 watt diode zener smd transistor p3 vr1 100k lin IRF5305
1998 - IRF3205 equivalent

Abstract: IRF 9732 IRFz44n equivalent IRF3710 equivalent IRF4905 equivalent IRC540 equivalent irf 9450 IRF 9734 IRF5305 equivalent irf 9740
Text: up to 500V then 80% of maximum rated Bvdss Equivalent Dev. Test Hrs. @ 90°C & Failure Rate Temp , 100 85 IRFZ24N 9733 100 85 IRLZ24N 9733 100 135 IRF5305 9734 100 85 IRFZ44N 9721 100 , : Vs = Vd = 0V; Vg as specified Equivalent Dev. - Failure Rate @ Hrs. @ 90°C & Vg 90°C & Vg = Test , explanation of equivalent device hours for HTRB tests. c. One FIT represents one failure in one billion (1.0E+09) hours. d. EQUIVALENT DEV-HRS for the long term gate stress test are determined by Crook's Model


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PDF O-220/D2PAK IRF9630 IRF9510L IRF9520 IRF9510 IRF9Z14 IRF9Z34 IRCZ34 IRCZ44 IRC540 IRF3205 equivalent IRF 9732 IRFz44n equivalent IRF3710 equivalent IRF4905 equivalent IRC540 equivalent irf 9450 IRF 9734 IRF5305 equivalent irf 9740
U5305

Abstract: ior 481 mosfet 476 16q
Text: ® Uses IRF5305 data and test conditions. RG = 2 5 0 ,1 ^ = -16A. (See Figure 12) ® ^S D- -16A, di/dt £ , and center of die contact © Vdo = -25V, starting T j = 25°C, L = 2.3mH ® Uses IRF5305 data and test


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PDF IRFR/U5305 IRFR5305) IRFU5305) f-481 EIA-541. U5305 ior 481 mosfet 476 16q
IRFR5305

Abstract: IRFU5305 63 marking code diode
Text: is measured between lead and center of die contact. Uses IRF5305 data and test conditions. TJ


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PDF PD-95025A IRFR5305PbF IRFU5305PbF IRFR5305) IRFU5305) IRFU120 IRFR/U5305PbF O-252AA) EIA-481 EIA-541. IRFR5305 IRFU5305 63 marking code diode
IRF Power MOSFET code marking

Abstract: IRFR5305 IRFU5305 IRF 100A IRFR5305PBF
Text: is measured between lead and center of die contact. Uses IRF5305 data and test conditions. TJ


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PDF PD-95025A IRFR5305PbF IRFU5305PbF IRFR5305) IRFU5305) AN-994. IRFR/U5305PbF O-251AA) IRF Power MOSFET code marking IRFR5305 IRFU5305 IRF 100A IRFR5305PBF
1RFR5305

Abstract: 0V520 C401 diode
Text: l-Pak, l_s of D-Pak is measured between lead and center of die contact. © Uses IRF5305 data and test


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PDF 1RFR5305) IRFU5305) IRFR/U5305 100US C-403 C-404 1RFR5305 0V520 C401 diode
Not Available

Abstract: No abstract text available
Text: ' C ® Pulse width < 300ps; duty cycle < 2%. © Uses IRF5305 data and test conditions * When mounted on


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PDF IRF5305S) IRF5305L) 1386B IRF5305S/L
AUFR5305

Abstract: U5305
Text: is measured between lead and center of die contact. † Uses IRF5305 data and test conditions. Â


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PDF PD-96341 AUIRFR5305 AUIRFU5305 AUFR5305 U5305
TDA 6172

Abstract: TDA 7321 TDA 1883
Text: 25il, Ias = -16A. (See Figure 12) © Uses IRF5305 data and test conditions ® Isd - -16A, di/dt


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PDF IRF5305S 4AS5M52 TDA 6172 TDA 7321 TDA 1883
2000 - 5.1 home theatre schematic diagram

Abstract: subwoofer 1000 watts amplifier 12v 400W AUDIO AMPLIFIER CIRCUIT DIAGRAM 12 volts 50 watt subwoofer circuit diagram 5.1 subwoofer ic type amplifier circuit diagram 400 watt subwoofer circuit diagram high subwoofer 1000 watts amplifier 100w audio amplifier circuit diagram class D 400w mono amplifier circuit 12v 50 watt subwoofer circuit diagram
Text: RN+ 29 R18 R12 Q5 IRF5305 RFBK24.3K 1% PGND C20 4.7uF/25V,TANT 25 L3 , LFAOUT + 1 C9 Q3 FDS4435A 10k + R1 R20 15/1W R14 Q7 IRF5305 RFBK


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PDF ANAN-16 5.1 home theatre schematic diagram subwoofer 1000 watts amplifier 12v 400W AUDIO AMPLIFIER CIRCUIT DIAGRAM 12 volts 50 watt subwoofer circuit diagram 5.1 subwoofer ic type amplifier circuit diagram 400 watt subwoofer circuit diagram high subwoofer 1000 watts amplifier 100w audio amplifier circuit diagram class D 400w mono amplifier circuit 12v 50 watt subwoofer circuit diagram
2004 - IRFR5305

Abstract: IRFR P-Channel MOSFET IRFU5305PbF IRFU5305
Text: is measured between lead and center of die contact. Uses IRF5305 data and test conditions. T J


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PDF PD-95025A IRFR5305PbF IRFU5305PbF IRFR5305) IRFU5305) O-252AA) EIA-481 EIA-541. EIA-481. IRFR5305 IRFR P-Channel MOSFET IRFU5305PbF IRFU5305
2004 - IRFR5305

Abstract: IRFU5305 irf5305 IRFR5305PBF IRFU5305PbF
Text: is measured between lead and center of die contact. Uses IRF5305 data and test conditions. T J


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PDF PD-95025A IRFR5305PbF IRFU5305PbF IRFR5305) IRFU5305) moun16 EIA-481 EIA-541. EIA-481. IRFR5305 IRFU5305 irf5305 IRFR5305PBF IRFU5305PbF
Not Available

Abstract: No abstract text available
Text: lead and center of die contact. † Uses IRF5305 data and test conditions. TJ ≤ 175°C * When


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PDF PD-95025A IRFR5305PbF IRFU5305PbF IRFR5305) IRFU5305) EIA-481 EIA-541. EIA-481.
1994 - IRF5905

Abstract: MOSFET IRF 9732 transistor equivalent irf510 IRF3710 equivalent IRFz44n equivalent IRF 9732 irf2807 equivalent IRF3205 application HTGB IRD110
Text: equivalent of 4.68 billion device-hours at a junction temperature of 90OC (see sections 4.1.1, 4.1.7, 4.2.1 , stress have accumulated the equivalent of over 50 billion device-hours at a junction temperature of 90OC , IRF4905 IRF4905S IRF510 IRF510S IRF520 IRF520N IRF520NS IRF520S IRF5210 IRF5210S IRF530 IRF5305 IRF5305S , 3.3.5.1 Generation 3, Logic Level # of Total Failures Modes Equivalent lots Qty Device Hours Tj = 90°C; Vg , lots 2 3.3.5.6 # of lots 25 Total Qty 2366 Generation 5, N-Channel, Standard Device # Modes Equivalent


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PDF O-220/D2PAK IRF5905 MOSFET IRF 9732 transistor equivalent irf510 IRF3710 equivalent IRFz44n equivalent IRF 9732 irf2807 equivalent IRF3205 application HTGB IRD110
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