The Datasheet Archive

IRF522 datasheet (28)

Part Manufacturer Description Type PDF
IRF522 Fairchild Semiconductor N-Channel Power MOSFETs, 11 A, 60-100 V Scan PDF
IRF522 FCI POWER MOSFETs Scan PDF
IRF522 Frederick Components Power MOSFET Selection Guide Scan PDF
IRF522 General Electric Power Transistor Data Book 1985 Scan PDF
IRF522 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
IRF522 International Rectifier N-Channel Power MOSFETs Scan PDF
IRF522 International Rectifier TO-220 N-Channel HEXFET Power MOSFET Scan PDF
IRF522 Motorola European Master Selection Guide 1986 Scan PDF
IRF522 Motorola Switchmode Datasheet Scan PDF
IRF522 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
IRF522 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
IRF522 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
IRF522 Others Semiconductor Master Cross Reference Guide Scan PDF
IRF522 Others Semiconductor Master Cross Reference Guide Scan PDF
IRF522 Others FET Data Book Scan PDF
IRF522 Others Shortform Transistor PDF Datasheet Scan PDF
IRF522 Others Shortform Datasheet & Cross References Data Scan PDF
IRF522 National Semiconductor N-Channel Power MOSFETs Scan PDF
IRF522 Siliconix MOSPOWER Design Data Book 1983 Scan PDF
IRF522 STMicroelectronics Shortform Data Book 1988 Scan PDF

IRF522 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1RF520

Abstract: IRFS20 1rf520 transistor RF521 transistor IRF520 IRF522 mosfet 1000 amper IRF520 IRFS22 RF523
Text: -Standard Power MOSFETs File Number 1574 IRF520, IRF521, IRF522 , IRF523 Power MOS , N-CHANNEL ENHANCEMENT MODE TERMINAL DIAGRAM The IRF520, IRF521, IRF522 and IRF523 are n-channel , 92CS-39529 JEDEC TO-220AB Absolute Maximum Ratings Parameter IRF520 IRF521 IRF522 IRF523 Units Vpg Drain , , (1.6mim) from case for 1Qs) °C 3-139 Standard Power MOSFETs IRF520, IRF521, IRF522 , IRF523 , Test Conditions bvdss Drain - Source Breakdown Voltage IRF520 IRF522 100 - - V vGs = ov IRF521


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PDF IRF520, IRF521, IRF522, IRF523 0V-100V IRF522 IRF523 1RF520 IRFS20 1rf520 transistor RF521 transistor IRF520 mosfet 1000 amper IRF520 IRFS22 RF523
irf520

Abstract: IRF521 irf522
Text: HARRIS S E M I C O N D U C T O R IRF520, IRF521, IRF522 , IRF523 8A and 9.2A, 80V and 100V , IRF520 IRF521 IRF522 IRF523 PACKAGE TO-220AB TO-220AB TO-220AB TO-220AB BRAND IRF520 IRF521 IRF522 IRF523 , . Copyright © Harris Corporation 1997 , File Number 1574.2 IRF520, IRF521, IRF522 , IRF523 Absolute , . e a s 36 -55 to 175 300 260 IRF521 80 80 9.2 6.5 37 ±20 60 0.4 36 -55 to 175 300 260 IRF522 100 , UNITS Drain to Source Breakdown Voltage IRF520, IRF522 IR F521, IRF523 Gate to Threshold Voltage Zero


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PDF IRF520, IRF521, IRF522, IRF523 TA09594. RF521, RF522, RF523 irf520 IRF521 irf522
1997 - IRF5201

Abstract: IRF520 IRF521 IRF5213 MOSFET IRF520 irf520 mosfet TB334 IRF523 IRF522 IRF-520
Text: IRF520, IRF521, IRF522 , IRF523 S E M I C O N D U C T O R 8A and 9.2A, 80V and 100V, 0.27 and , D PACKAGE BRAND IRF520 TO-220AB IRF520 IRF521 TO-220AB IRF521 IRF522 TO-220AB IRF522 IRF523 TO-220AB IRF523 G S NOTE: When ordering, use the entire , . Copyright © Harris Corporation 1997 5-1 File Number 1574.2 IRF520, IRF521, IRF522 , IRF523 , Absolute Maximum Ratings IRF521 80 80 9.2 6.5 37 ±20 60 0.4 36 -55 to 175 IRF522 100 100


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PDF IRF520, IRF521, IRF522, IRF523 IRF5201 IRF520 IRF521 IRF5213 MOSFET IRF520 irf520 mosfet TB334 IRF523 IRF522 IRF-520
IRF521

Abstract: IRF522 irf520 IRF523 RP523 G-D-S TO-92 irf520 power R521 R520 TO-220 3 lead bend
Text: SUPERTEX INC "Öl DE~J Û773STS GOOlSßH 0 ^ Super tex inc. IRF520 IRF521 IRF522 IRF523 R520 , .3n 8.OA IRF521 R521 100V 0.4ft 7.0A IRF522 — 60V 0.4ft 7.0A IRF523 — Advanced DMOS Technology , 3.12 8.0A 32.0A IRF522 , IRF523 7.0A 32.OA 40W 80 3.12 8.0A 32.OA R520, R521 1 .OA 9.0A 1W 170 125 , IRF520, IRF522 , R520 100 V ves = 0, Ip = 250nA Breakdown Voltage IRF521, IRF523, R521 60 v GS(th , = 10V vds > 'diON) x rds(on) Max Ratin9 IRF522 , IRF523 7.0 ros(on) Static Draln-to-Source


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PDF 773STS IRF520 IRF521 IRF522 IRF523 O-220 IRF522 IRF523 RP523 G-D-S TO-92 irf520 power R521 R520 TO-220 3 lead bend
1RF520

Abstract: irf521 irf520 IRF523
Text: 100V 60V 0.30 0.3Q 0.4Q 0.4Q 8.0A 8.0A 7.0A 7.0A IRF520 IRF521 IRF522 IRF523 R520 R521 - , Characteristics Package lD (continuous)* lD (pulsed)* Power Dissipation @T0=25°C IRF520, IRF521 IRF522 , IRF523 , Body Leakage IRF520, IRF522 , R520 IRF521, IRF523, R521 100 60 2.0 4.0 500 250 1000 HA V V nA , Current Static Draln-to-Source ON-State Resistance ^DS(ON) IRF520, IRF521, R520, R521 IRF522 , IRF523 IRF520, IRF521 R520, R521 IRF522 , IRF523 8.0 7.0 A 0.3 0.4 a U VGS=10V, lD= 4.0A ^os


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PDF fl773STS IRF521 O-220 IRF520 IRF522 IRF523 IRF520, IRF522, 1RF520 IRF523
IRF740 "direct replacement"

Abstract: irf9640 REPLACEMENT GUIDE IRF9540 replacement IRF640 irf510 2Sk350 HITACHI rca9213a IRF9613 fu120 buz11 cross reference 2SK309
Text: POWER MOSFETs SAMSUNG Direct Replace ment IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 , IRF513 IRF520 IRF521 IRF522 IRF523 IRF610 IRF611 IRF612 IRF613 IRF620 IRF621 IRF622 IRF623 IRF630 IRF631 , MOSFETs SAMSUNG Direct Re placement IRF512 IRF613 IRF613 IRF522 IRF522 IRF612 IRF722 IRF710 IRF823 IRF720 , IRF523 IRF523 IRF523 IRF522 IRF522 IRF611 IRF543 IRF543 IRF530 IRF533 IRF533 IRF523 IRF613 IRF523 IRF522 IRF522 IRF522 IRF633 IRF610 IRF610 IRF612 IRF541 IRF540 IRF641 IRF642 IRF741 IRF741 IRF740 IRF842 IRF611


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PDF IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRF610 IRF611 IRF740 "direct replacement" irf9640 REPLACEMENT GUIDE IRF9540 replacement IRF640 irf510 2Sk350 HITACHI rca9213a IRF9613 fu120 buz11 cross reference 2SK309
IRF520

Abstract: IRF521 F521 irf522 irf523
Text: HAJims S S e m ico n d ucto r IRF520, IRF521, IRF522 , IRF523 y y November 1997 8A and , IRF520 IRF521 IRF522 IRF523 PACKAGE TO-220AB TO-220AB TO-220AB TO-22QAB BRAND IRF520 IRF521 IRF522 IRF523 , , IRF522 , IRF523 Absolute Maximum Ratings T c = 25°c, Unless Otherwise Specified IRF520 100 100 9.2 6.5 , IRF522 100 100 8 5.6 32 ±20 60 0.4 36 -55 to 175 300 260 IRF523 80 80 8 5.6 32 ±20 60 0.4 36 -55 to , IRF520, IRF522 IR F521, IRF523 Gate to Threshold Voltage Zero Gate Voltage Drain Current On-State


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PDF IRF520, IRF521, IRF522, IRF523 TA09594 RF521, IRF520 IRF521 F521 irf522 irf523
IRF520 application note

Abstract: IRF52Q Irf520 spice irf522 AN975 A44B irf521
Text: (Body Diode) IRF522- IRF523 , IN THIS AREA LIMITED *DS(ON) ÜRF520, lH r . : : 1 : IRF522. w = = ü = ¡= current 5 2 i , energy pulse circuits. Part Number IRF520 IRF521 IRF522 IRF523 RDS(on) 0.27Q 0 .2 7 0 0.36Q 0.36Q , applies to product with batch codes that begin with a digit, ie. 2A3B C-191 IRF520, IRF521, IRF522 , 0.40 ; ±20 IRF522 , IRF623 ao . . 5.6 32 Gate-to-Source VWtage Single Pulse A/alanche Energy


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PDF T-39-11 IRF52Q IRFS21 IRFS23 T0-220AB C-197 IRF520, IRF521, IRF522, IRF523 IRF520 application note Irf520 spice irf522 AN975 A44B irf521
IRF50

Abstract: irf521 irf520 pin configuration IRF521 irf522 irf523
Text: D N-channel enhancement mode vertical DMOS FET IRF520 IRF521 IRF522 IRF523 FEATURES · · · · , achieve greater stability, reliability and ruggedness. PRODUCT SUMMARY Part No. IRF620 IRF521 IRF522 , D ; IRF520 IRF521 IRF522 IRF523 !' ; ABSOLUTE MAXIM UM RATINGS , range IRF520 100 8 32 ±20 40 IRF521 60 8 32 ±20 40 IRF522 100 7 28 ±20 40 IRF523 Units 60 7 28 ±20 40 V , ) Parameter b v dss Part No. Min. IRF520 IRF522 IRF521 IRF523 100 60 2 - Max. 4 500 250 1000 Unit V


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PDF IRF520 IRF521 IRF522 IRF523 IRF620 IRF523 O-220 IRF50 pin configuration IRF521
IRF520

Abstract: irf520 mosfet mosfet irf520 irf521 power MOSFET IRF520
Text: IRF520 IRF521 IRF522 IRF523 V ds 100V 80V 100 V 80V FtasIRF520 100 100 IRF521 80 80 ±20 IRF522 100 100 IRF523 , Drain-Source Breakdown Voltage IRF520 IRF522 IRF521 IRF523 VGS(th| Igss Igss N-CHANNEL POWER MOSFETS (T c , Current (2) IRF520 IRF521 IRF522 IRF523 Static Drain-Source On-State Resistance (2) IRF520 IRF521 IRF522 , haracteristic Continuous Source Current (Body Diode) IRF520 IRF521 IRF522 IRF523 Pulse Source Current(Body Diode


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PDF IRF520/521/522/523 O-220 IRF520 IRF521 IRF522 IRF523 IRF520/521Z522/523 irf520 mosfet mosfet irf520 power MOSFET IRF520
IRF520

Abstract: irf521 irf522 irf520 mosfet mosfet irf520 TO 521 MH
Text: 3 PRODUCT SUMMARY Part Number IRF520 IRF521 IRF522 IRF523 V ds R d S(ok) Id 9.2A 9 2A 8 OA , 5.6 32 IRF522 100 100 IRF523 80 80 Unit Vdc Vdc Vdc Ade Ade Ade Ade mJ A Watts W /°C Tj , Tstg Tl , IRF520 IRF522 IRF521 IRF523 VGS(th) N-CHANNEL POWER MOSFETS (Tc = 2 5 °C unless otherwise specified , Drain-Source Current (2) IRF520 IRF521 IRF522 IRF523 Static Drain-Source On-State Resistance (2) IRF520 IRF521 IRF522 IRF523 Vds= V gs, Id = 2 5 0 hA Vgs = 2 0 V V qS= - 2 0 V VDs=Max. Rating, Vqs = 0 V VDs=M ax


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PDF O-220 IRF520 IRF521 IRF522 IRF523 GG121Sb IRF520/521Z522/523 irf520 mosfet mosfet irf520 TO 521 MH
IRF522

Abstract: IRF523 U106
Text:  IRF522 ,523 7 AMPERES 1100, 60 VOLTS RDS(ON) = 04 " This series of N-Chanriel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device rugged-ness and reliability. This design has been optimized to give superior performance in most , paralleling maximum ratings (Tc= 25°C) (unless otherwise specified) RATING SYMBOL IRF522 IRF523 UNITS , ) | CHARACTERISTIC SYMBOL MIN TYP MAX UNIT off characteristics Drain-Source Breakdown Voltage IRF522 (VGS =


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PDF IRF522 00A//i/sec, IRF523 U106
1rf521

Abstract: IBF520-523 p10n10e
Text: Dissipation Limited · Source-to-Drain Diode Characterized for Use With Inductive Loads IRF520 IRF521 IRF522 , , IRF522 IRF522 , IRF523 'D ion) IRF520, IRF521 IRF522 ,1RF523 9FS IRF520,1RF521 IRF522


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PDF IRF520 IRF521 IRF522 IRF523 IRF521, IRF523 IRF520, 1rf521 IBF520-523 p10n10e
irf5205

Abstract: IRF520 IRF521 IRF522 IRF523
Text: TECHNICAL DATA SEMICONDUCTOR IRF520 IRF521 IRF522 IRF523 TMOS POWER FETs 7 and 8 AMPERES rDS(on) = 0.3 OHM 60 and 100 VOLTS rDS(on) = 0.4 OHMS 60 and 100 VOLTS MOTOROLA P o w e r Field E ffe , 1 Unit V(BR)DSS IRF521, IRF523 IRF520, IRF522 dss !g s s f 'g s s r - - 0.2 1 100 100 60 100 - Vdc m Adc nAdc nAdc v GS(th) r DS|on) IRF520, IRF521 IRF522 , IRF523 ·Dion) IRF520, IRF521 IRF522 , IRF523 9FS IRF520, IRF521 IRF522 , IRF523 2 4 Vdc Ohm - - 8 7 0.3 0.4


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PDF IRF520 IRF521 IRF522 IRF523 IRF520, IRF522, irf5205 IRF523
IRF520

Abstract: irf521 IRF523 F522
Text: IRF521 IRF522 IRF523 V ds 100 V 80V 100V 80V RoSlon) 0 .2 7 fi 0.27Í1 0 .3 6 ÌÌ 0 .3 6 0 Id 9.2A 9.2A , IRF520 100 100 IRF521 80 80 ±20 8.0 5.6 37 1 8.0 5.6 37 IRF522 100 100 IRF523 80 80 Unit Vdc Vdc Vdc Ade , / IRF522 IRF521/IRF523 VGS{th) loss Igss Idss Gate Threshold Voltage Gate-Source Leakage Forward , IRF522 /IRF523 Static Drain-Source On-State Resistance (2) IRF520/IRF521 IRF522 /IRF523 9 fs N-CHANNEL , /IRF521 IR F522/IRF523 Pulse Source Current(Body Diode)(3) IRF520/IRF521 IRF522 /IRF523 Diode Forward


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PDF IRF520/521/522/523 IRF520 IRF521 IRF522 IRF523 IRF520/5217522/523 F522
IRFS20

Abstract: 1RF122 IRF643 IRF642 IRF641 IRF640 IRF633 IRF632 0-30Q IRF630
Text: 7.0 40 IRF522 80 0.18 14.0 75 VN0800D 80 0.25 12.0 75 VN0801D 80 4.0 1.7 20 VN88AD 80 4.5 1.6 , 1.2 6.25 VN35AB 1-6 Siliconix IRF120 ■-IRFI21- ■IRF122 ■IRF123 IRF520 ■IRF521 » IRF522 , IRF123 60V IRFS20 100 V 0.30Q 8A IRF521 60V TQ-220AB IRF522 100 V 0.40C2 . 7 A IRF523 60V , (Note 1) IRF122,123 IRF522 , 523 0.30 0.40 Dynamic gfS Forward Transconductance All 1.5 2.5


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PDF IRF640 IRF642 IRF630 IRF632 IRF620 IRF622 VN1706D IRF641 IRF643 IRF631 IRFS20 1RF122 IRF643 IRF642 IRF641 IRF640 IRF633 IRF632 0-30Q IRF630
irf120

Abstract: VN64GA oni 350 IRF152 IRF150 IRF142 IRF140 IRF132 IRF130 IRFS20
Text: 1.4 20 VN2406D Siliconix 1-5 IRF120 ■-IRFI21- ■IRF122 ■IRF123 IRF520 ■IRF521 » IRF522 , IRF123 60V IRFS20 100 V 0.30Q 8A IRF521 60V TQ-220AB IRF522 100 V 0.40C2 . 7 A IRF523 60V , (Note 1) IRF122,123 IRF522 , 523 0.30 0.40 Dynamic gfS Forward Transconductance All 1.5 2.5


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PDF IRF150 IRF152 IRF140 IRF142 VN1000A IRF130 VN1001A IRF132 IRF120 IRF122 irf120 VN64GA oni 350 IRF152 IRF150 IRF142 IRF140 IRF132 IRF130 IRFS20
VN0108N2

Abstract: IRF842 IRF822 IRF640 IRF632 IRF540 IRF522 IRF422 IRF240 2SJ54
Text: -220 IRF522 100 0.4 BUZ 23 100 0.20 TO-3 VN1000A 100 0.18 BUZ 24 100 0.06 TO-3 — — — BUZ 25 100 Q , VN1001D 100 0.25 12.0 75 IRF532 100 0.30 8.0 40 IRF520 TO-220AB 100 0.40 7.0 40 IRF522 80 0.18 14.0 , IRF120 ■-IRFI21- ■IRF122 ■IRF123 IRF520 ■IRF521 » IRF522 ■IRF523 100V N-Channel , TQ-220AB IRF522 100 V 0.40C2 . 7 A IRF523 60V ABSOLUTE MAXIMUM RATINGS (Tc= 25°C unless , > Resistance IRF120,121 IRF520, 521 0.25 0.30 n Vqs = 10V, lp = 4A (Note 1) IRF122,123 IRF522 , 523 0.30


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PDF O-220 VN1000D IRF522 VN1000A IRF540 IRF632 IRF640 VN0108N2 IRF842 IRF822 IRF422 IRF240 2SJ54
IRF520

Abstract: IRF120 10n10 circuit diagram irf520 mtp10n10 irf5205 MTP10N08 IRF123 IRF521 IRF522
Text: -220AB IRF120 IRF121 IRF122 IRF123 IRF520 IRF521 IRF522 IRF523 MTP10N08 MTP10N10 Part Number Voss RpS(on , 0.30 ft 8.0 A 5.0 A TO-220AB IRF521 60 V 0.30 ft 8.0 A 5.0 A IRF522 100 V 0.40 ft 7.0 A 4.0 A , MTP10N10 Rating MTP10N08 Rating IRF122/123 IRF522 /523 Unit Vdss Drain to Source Voltage1 100 80 60 V


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PDF IRF120-123/IRF520-523 MTP10N08/10N10 O-220AB IRF120 IRF121 IRF122 IRF123 IRF520 IRF521 MTP10N08/10N10 IRF520 10n10 circuit diagram irf520 mtp10n10 irf5205 MTP10N08 IRF123 IRF521 IRF522
jrf 520

Abstract: irf 44 n schematic diagram UPS 600 Power structure TRANSISTOR n 522 IRF520 application note IRF520 irf5205 IRF521 IRF 520 IRF523FI
Text: 9.2 A IRF520FI 100 V 0.27 n 7 A IRF521 80 V 0.27 fi 9.2 A IRF521FI 80 V 0.27 fi 7 A IRF522 100 V 0.36 fi 8 A IRF522FI 100 V 0.36 fi 6 A 1RF523 80 V 0.36 fi 8 A IRF523FI 80 V 0.36 fi 6 A • 80-100 , Fl for IRF522 /523/522FI/523FI 0.27 0.36 Í2 0 ENERGY TEST 'uis Undamped inductive switching current (single pulse) VDD= 30 V L = 100 ,tH starting Tj= 25°C for IRF520/521/520FI/521FI for IRF522


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PDF 520/FI-521 522/FI-523/FI IRF520 IRF520FI IRF521 IRF521FI IRF522 IRF522FI 1RF523 IRF523FI jrf 520 irf 44 n schematic diagram UPS 600 Power structure TRANSISTOR n 522 IRF520 application note irf5205 IRF 520
irf 520

Abstract: irf 44 n TRANSISTOR n 522 TO 521 MH irf 522 transistor IRF 522 irf521 Tc 521 A
Text: / = 7 SGS-THOMSON «lisimiigretMoei IRF 520/FI-521/FI IRF 522/FI-523/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF520 IRF520FI IRF521 IRF521FI IRF522 IRF522FI IRF523 IRF523FI V DSS ^D S(on) 100 V 100 V 80 V 80 V 100 V 100 V 80 V 80 V 0.27 n 0.27 fi 0.27 fi 0.27 fi 0.36 , )m a x VG S= 10 V 8 VGS= 10 V lD= 5.6 A for IRF520/521/520FI/521FI for IRF522 /523/522FI/523FI , = 100 fiH starting T j= 25°C for IRF520/521/520FI/521FI for IRF522 /523/522FI/523FI 9.2 8 A A


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PDF 520/FI-521/FI 522/FI-523/FI IRF520 IRF520FI IRF521 IRF521FI IRF522 IRF522FI IRF523 IRF523FI irf 520 irf 44 n TRANSISTOR n 522 TO 521 MH irf 522 transistor IRF 522 Tc 521 A
irf530 equivalent

Abstract: 237 521 02 VN64GA VN0801D VN0401D IVN6200KNP IVN6200CNH IVN6200CNF IVN6200CNE IVN6100TNU
Text: – -IRFI21- ■IRF122 ■IRF123 IRF520 ■IRF521 » IRF522 ■IRF523 100V N-Channel Enhancement Mode , TQ-220AB IRF522 100 V 0.40C2 . 7 A IRF523 60V ABSOLUTE MAXIMUM RATINGS (Tc= 25°C unless , > Resistance IRF120,121 IRF520, 521 0.25 0.30 n Vqs = 10V, lp = 4A (Note 1) IRF122,123 IRF522 , 523 0.30


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PDF IVN6100TNU IVN6200CND O-220 VN0401D IVN6200CNE T0-220 IRF533 IVN6200CNF VN0801D irf530 equivalent 237 521 02 VN64GA IVN6200KNP IVN6200CNH
TO 521 MH

Abstract: transistor IRF520 TT220 schematic diagram UPS 600 Power structure irf 44 n 56-A IRF520 application note IRF 520
Text: / = T S G S -T H O M S O N H 0»H[L[i(gï^(Q)RS 0© i IRF 520/FI-521/FI IRF 522/FI-523/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF520 IRF520FI IRF521 IRF521FI IRF522 IRF522FI IRF523 IRF523FI V DSS ^ D S(on) 'd ' 100 V 100 V 80 V 80 V 100 V 100 V 80 V 80 V 0.27 ß , /521/520FI/521FI for IRF522 /523/522FI/523FI 0.27 0.36 0 0 ENERGY TEST ·uis Unclamped inductive , IRF522 /523/522FI/523FI 9.2 8 A A DYNAMIC 9(s * Forward transconductance Input


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PDF 520/FI-521/FI 522/FI-523/FI IRF520 IRF520FI IRF521 IRF521FI IRF522 IRF522FI IRF523 IRF523FI TO 521 MH transistor IRF520 TT220 schematic diagram UPS 600 Power structure irf 44 n 56-A IRF520 application note IRF 520
Not Available

Abstract: No abstract text available
Text: IRF522 Transistors N-Channel Enhancement MOSFET Military/High-RelN V(BR)DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)8.0# I(DM) Max. (A) Pulsed I(D)5.6 @Temp (øC)100 IDM Max (@25øC Amb)32# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)60# Minimum Operating Temp (øC)-55õ Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case2.5 Thermal Resistance Junc-Amb.80 V(GS)th Max. (V)4 V(GS)th (V) (Min)2 @(VDS) (V) (Test Condition) @I(D) (A) (Test Condition)250u I(DSS) Max. (A


Original
PDF IRF522
irf150

Abstract: VN64GA 2SK176 IRF223 IRF122 HPWR-6504 HPWR-6503 HPWR-6502 2SK133 2SK132
Text: Siliconix 1-5 IRF120 ■-IRFI21- ■IRF122 ■IRF123 IRF520 ■IRF521 » IRF522 ■IRF523 100V , 100 V 0.30Q 8A IRF521 60V TQ-220AB IRF522 100 V 0.40C2 . 7 A IRF523 60V ABSOLUTE MAXIMUM , > Resistance IRF120,121 IRF520, 521 0.25 0.30 n Vqs = 10V, lp = 4A (Note 1) IRF122,123 IRF522 , 523 0.30


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PDF PWR-6501 IRF441 HPWR-6502 IRF340 HPWR-6503 HPWR-6504 VN4001A 2SK132 IRF122 irf150 VN64GA 2SK176 IRF223 2SK133
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