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Part Manufacturer Description Datasheet Download Buy Part
AUIRF2804L Infineon Technologies AG Power Field-Effect Transistor, 270A I(D), 40V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, TO-262, 3 PIN
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Part Manufacturer Supplier Stock Best Price Price Each Buy Part
AUIRF2804L Infineon Technologies AG Avnet - €2.21 €1.62
AUIRF2804L Infineon Technologies AG Allied Electronics & Automation - $3.30 $3.30
AUIRF2804L Infineon Technologies AG RS Components 15 £2.25 £2.25
AUIRF2804L International Rectifier ComS.I.T. 250 - -
AUIRF2804L Infineon Technologies AG Rutronik 100 $2.88 $2.24
AUIRF2804L Infineon Technologies AG Chip1Stop 800 $6.59 $2.47
AUIRF2804L Infineon Technologies AG element14 Asia-Pacific - $4.70 $2.48
AUIRF2804L-313 Infineon Technologies AG Avnet - $1.99 $1.79
IRF2804LPBF Infineon Technologies AG Newark element14 82 $2.75 $1.36
IRF2804LPBF Infineon Technologies AG RS Components 356 £1.44 £1.25
IRF2804LPBF Infineon Technologies AG Avnet - $1.07 $0.95
IRF2804LPBF Infineon Technologies AG TME Electronic Components 92 $2.76 $1.97
IRF2804LPBF Infineon Technologies AG New Advantage Corporation 500 $2.70 $2.45
IRF2804LPBF Infineon Technologies AG Allied Electronics & Automation - $3.75 $3.75
IRF2804LPBF Infineon Technologies AG Future Electronics 600 $1.35 $1.06
IRF2804LPBF Infineon Technologies AG Chip1Stop 950 $3.79 $1.42
IRF2804LPBF International Rectifier Rochester Electronics 3,700 $1.68 $1.37
IRF2804LPBF Infineon Technologies AG element14 Asia-Pacific 84 $3.38 $3.38
IRF2804LPBF Infineon Technologies AG Farnell element14 102 £2.15 £1.25
IRF2804LPBF Infineon Technologies AG RS Components 36 £2.13 £1.25

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IRF2804L datasheet (4)

Part Manufacturer Description Type PDF
IRF2804L International Rectifier HEXFET Power Mosfet Original PDF
IRF2804L International Rectifier 40V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRF2804L with Standard Packaging Original PDF
IRF2804LPBF International Rectifier 40V Single N-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRF2804L with Lead-Free Packaging. Original PDF
IRF2804LPBF International Rectifier AUTOMOTIVE MOSFET Original PDF

IRF2804L Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2002 - IRF2804L

Abstract: IRF2804S
Text: PD - 94495B IRF2804S IRF2804L HEXFET® Power MOSFET Features l l l l l Advanced , -262 IRF2804L Absolute Maximum Ratings Parameter ID @ TC ID @ TC ID @ TC IDM PD @TC = 25°C = 100 , 12/11/02 IRF2804S/ IRF2804L Electrical Characteristics @ TJ = 25°C (unless otherwise specified , sample failure population. 100% tested to this value in production. www.irf.com IRF2804S/ IRF2804L , . Typical Forward Transconductance Vs. Drain Current 3 IRF2804S/ IRF2804L 12000 20 10000


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PDF 94495B IRF2804S IRF2804L EIA-418. IRF2804L IRF2804S
2002 - Not Available

Abstract: No abstract text available
Text: PD - 94495A IRF2804S IRF2804L HEXFET® Power MOSFET Features l l l l l Advanced , -262 IRF2804L Absolute Maximum Ratings Parameter ID @ TC ID @ TC ID @ TC IDM PD @TC = 25°C = 100 , Rectifier. www.irf.com 1 10/10/02 IRF2804S/ IRF2804L Electrical Characteristics @ TJ = 25 , sample failure population. 100% tested to this value in production. www.irf.com IRF2804S/ IRF2804L , / IRF2804L 12000 20 10000 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ Ciss = C + C


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PDF 4495A IRF2804S IRF2804L variet90 EIA-418.
1080S

Abstract: No abstract text available
Text: IRF2804S/ IRF2804L Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance Qg Q gs Qgd td , sample failure population. 100% tested to this value in production. IRF2804S/ IRF2804L D2Pak Package , P G ! Ã F @ @ X G Ã @ I DG 9 IRF2804S/ IRF2804L D2Pak Tape & Reel


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PDF IRF2804S/IRF2804L EIA-418. 1080S
IRF2804

Abstract: No abstract text available
Text: PD - 94436C IRF2804 IRF2804S IRF2804L AUTOMOTIVE MOSFET HEXFET® Power MOSFET Features l l l l l Advanced Process Technology Ultra Low On-Resistance 175° Operating Temperature C Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 40V RDS(on) = 2.0mΩ‰ G Description ID = 75A S Specifically designed for Automotive applications, this , of other applications. D2Pak IRF2804S TO-220AB IRF2804 TO-262 IRF2804L Absolute


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PDF 94436C IRF2804 IRF2804S IRF2804L O-220AB IRF2804
2003 - IRF2804 EQUIVALENT

Abstract: irf2804 SMD mosfet MARKING code TC SMD INDUCTOR Marking Code AN-994 IRF2804L IRF2804S SMD mosfet MARKING code T SL1600
Text: PD - 94436C IRF2804 IRF2804S IRF2804L AUTOMOTIVE MOSFET HEXFET® Power MOSFET Features l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 40V RDS(on) = 2.0m G Description ID = 75A S Specifically designed for Automotive applications, this HEXFET® Power MOSFET , . D2Pak IRF2804S TO-220AB IRF2804 TO-262 IRF2804L Absolute Maximum Ratings Parameter Max


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PDF 94436C IRF2804 IRF2804S IRF2804L O-220AB IRF2804 EQUIVALENT irf2804 SMD mosfet MARKING code TC SMD INDUCTOR Marking Code AN-994 IRF2804L IRF2804S SMD mosfet MARKING code T SL1600
2003 - IRF2804

Abstract: AN-994 IRF2804L IRF2804S SMD mosfet MARKING code TC
Text: PD - 94436C IRF2804 IRF2804S IRF2804L AUTOMOTIVE MOSFET HEXFET® Power MOSFET Features l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 40V RDS(on) = 2.0m G Description ID = 75A S Specifically designed for Automotive applications, this HEXFET® Power MOSFET , . D2Pak IRF2804S TO-220AB IRF2804 TO-262 IRF2804L Absolute Maximum Ratings Parameter Max


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PDF 94436C IRF2804 IRF2804S IRF2804L EIA-418. O-220AB IRF2804 AN-994 IRF2804L IRF2804S SMD mosfet MARKING code TC
2004 - smd code marking A6

Abstract: diode SMD ultra fast st B4
Text: PD - 95332 AUTOMOTIVE MOSFET Features l l l l l l IRF2804PbF IRF2804S IRF2804L HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax TO-220 is available in PbF as a Lead-Free VDSS = 40V RDS(on) = 2.0m G S Description Specifically designed for Automotive applications, this HEXFET , applications. ID = 75A TO-220AB IRF2804PbF D2Pak IRF2804S TO-262 IRF2804L Absolute Maximum


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PDF IRF2804PbF IRF2804S IRF2804L O-220 devic27 EIA-418. O-220AB smd code marking A6 diode SMD ultra fast st B4
IRFP460Z

Abstract: IRF3205 application IRF3205 equivalent power MOSFET IRFP460z irfp4004 IRF3808 equivalent IRLL014N IRF1405 equivalent irfz44v equivalent IRF3205
Text: TO-220: Standard Gate IRL2910 IRF2804L IRF3205 IRF3205 IRF3205 IRF3205 IRFZ44N IRFZ46N


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PDF O-220 IRFP460Z IRF3205 application IRF3205 equivalent power MOSFET IRFP460z irfp4004 IRF3808 equivalent IRLL014N IRF1405 equivalent irfz44v equivalent IRF3205
2005 - IRF1830G

Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP70N03S AP85L02h ap70l02h 2SK3683 2SK2696
Text: No file text available


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PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP70N03S AP85L02h ap70l02h 2SK3683 2SK2696
IRU1239SC

Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Text: No file text available


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PDF 100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
AN-994

Abstract: smd marking XF to262 pcb footprint IRF2804
Text: PD - 95332A IRF2804PbF IRF2804SPbF IRF2804LPbF AUTOMOTIVE MOSFET Features l l l l l l HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 40V RDS(on) = 2.0m G Description ID = 75A S Specifically designed for Automotive applications, this , of other applications. TO-220AB IRF2804PbF D2Pak IRF2804SPbF TO-262 IRF2804LPbF


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PDF 5332A IRF2804PbF IRF2804SPbF IRF2804LPbF EIA-418. O-220AB AN-994 smd marking XF to262 pcb footprint IRF2804
irfb4115

Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Text: No file text available


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PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
lm3240

Abstract: smd transistor 6c5 EMP11 RSQ035P03 HTRM800 CY62148E BAS70WT ABB inverter motor fault code inverter ABB ACS 300 abb inverter manual acs 800
Text: No file text available


OCR Scan
PDF P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U P468-ND LNG995PF8W AT-DE071) lm3240 smd transistor 6c5 EMP11 RSQ035P03 HTRM800 CY62148E BAS70WT ABB inverter motor fault code inverter ABB ACS 300 abb inverter manual acs 800
2010 - AN-994

Abstract: IRF2804
Text: PD - 95332B IRF2804PbF IRF2804SPbF IRF2804LPbF Features l l l l l l HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 40V RDS(on) = 2.0m G Description ID = 75A S This HEXFET® Power MOSFET utilizes the latest processing techniques to , of other applications. TO-220AB IRF2804PbF D2Pak IRF2804SPbF TO-262 IRF2804LPbF


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PDF 95332B IRF2804PbF IRF2804SPbF IRF2804LPbF EIA-418. O-220AB AN-994 IRF2804
2005 - AN-994

Abstract: IRF2804
Text: PD - 95332A IRF2804PbF IRF2804SPbF IRF2804LPbF AUTOMOTIVE MOSFET Features l l l l l l HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 40V RDS(on) = 2.0m G Description ID = 75A S Specifically designed for Automotive applications, this , of other applications. TO-220AB IRF2804PbF D2Pak IRF2804SPbF TO-262 IRF2804LPbF


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PDF 5332A IRF2804PbF IRF2804SPbF IRF2804LPbF EIA-418. O-220AB AN-994 IRF2804
IRF2804

Abstract: No abstract text available
Text: PD - 95332B IRF2804PbF IRF2804SPbF IRF2804LPbF Features l l l l l l HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 40V RDS(on) = 2.0mΩ‰ G Description ID = 75A S This HEXFET® Power MOSFET utilizes the latest processing techniques to , of other applications. TO-220AB IRF2804PbF D2Pak IRF2804SPbF TO-262 IRF2804LPbF


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PDF 95332B IRF2804PbF IRF2804SPbF IRF2804LPbF EIA-418. O-220AB IRF2804
AN-994

Abstract: smd marking XF mosfet ir 840
Text: PD - 95332A IRF2804PbF IRF2804SPbF IRF2804LPbF AUTOMOTIVE MOSFET Features l l l l l l HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 40V RDS(on) = 2.0m G Description ID = 75A S Specifically designed for Automotive applications, this , of other applications. TO-220AB IRF2804PbF D2Pak IRF2804SPbF TO-262 IRF2804LPbF


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PDF 5332A IRF2804PbF IRF2804SPbF IRF2804LPbF AN-994. O-262 O-220 IRF2804/S/LPbF O-220AB AN-994 smd marking XF mosfet ir 840
IRLML2502TRPBF

Abstract: IRLML2803TRPBF IRLML2402TRPBF IRF7821TRPBF IRFR3709ZTRPBF irlr7843tr irf740 irfp4004 IRF7805ZTRPBF IRF7413ZTR
Text: IRF7469PBF IRF7471TRPBF IRF7471PBF IRF7842PBF IRFR3504ZPBF IRF4104PBF IRF1404ZPBF IRF2804PBF IRF2804LPBF


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PDF O-220AB IRL3302PBF IRL3202PBF IRL3502SPBF IRLML2402TRPBF IRLMS1902TRPBF IRF7101PBF IRLML2502TRPBF IRF7301PBF IRF7530PBF* IRLML2803TRPBF IRF7821TRPBF IRFR3709ZTRPBF irlr7843tr irf740 irfp4004 IRF7805ZTRPBF IRF7413ZTR
to262 pcb footprint

Abstract: AN-994 IRF2804LPBF smd marking 634 IRF2804
Text: PD - 95332A IRF2804PbF IRF2804SPbF IRF2804LPbF AUTOMOTIVE MOSFET Features l l l l l l HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 40V RDS(on) = 2.0m G Description ID = 75A S Specifically designed for Automotive applications, this , of other applications. TO-220AB IRF2804PbF D2Pak IRF2804SPbF TO-262 IRF2804LPbF


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PDF 5332A IRF2804PbF IRF2804SPbF IRF2804LPbF EIA-418. O-220AB to262 pcb footprint AN-994 IRF2804LPBF smd marking 634 IRF2804
2005 - IRF 5350

Abstract: irf 540 mosfet equivalent smd mosfet MOSFET marking smd TO-262 Package ISD 2210 IRF P CHANNEL MOSFET irf 840 TO-262 MOSFET datasheet IRF2804
Text: PD - 95332A IRF2804PbF IRF2804SPbF IRF2804LPbF AUTOMOTIVE MOSFET Features l l l l l l HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 40V RDS(on) = 2.0m G Description ID = 75A S Specifically designed for Automotive applications, this , of other applications. TO-220AB IRF2804PbF D2Pak IRF2804SPbF TO-262 IRF2804LPbF


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PDF 5332A IRF2804PbF IRF2804SPbF IRF2804LPbF O-220AB IRF 5350 irf 540 mosfet equivalent smd mosfet MOSFET marking smd TO-262 Package ISD 2210 IRF P CHANNEL MOSFET irf 840 TO-262 MOSFET datasheet IRF2804
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