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IRF1503STRLPBF Infineon Technologies AG Power Field-Effect Transistor, 75A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
IRF1503SPBF Infineon Technologies AG Power Field-Effect Transistor, 75A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
IRF1503PBF Infineon Technologies AG Power Field-Effect Transistor, 75A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
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IRF150 Infineon Technologies AG Avnet 862 $13.59 $13.39
IRF150 International Rectifier element14 Asia-Pacific 10 $12.57 $12.57
IRF150 Infineon Technologies AG Chip1Stop 792 $20.10 $11.90
IRF150 HARTING Technology Group ComS.I.T. 1,115 - -
IRF150 General Electric Company Bristol Electronics 8 - -
IRF150 International Rectifier Bristol Electronics 12 $9.75 $7.31
IRF1503PBF Infineon Technologies AG TME Electronic Components 103 $2.44 $1.65
IRF1503PBF Infineon Technologies AG Allied Electronics & Automation - $3.76 $3.20
IRF1503PBF Infineon Technologies AG Avnet - $1.19 $1.09
IRF1503PBF International Rectifier ComS.I.T. 220 - -
IRF1503SPBF Infineon Technologies AG Allied Electronics & Automation - $3.65 $3.10
IRF1503SPBF Infineon Technologies AG Chip1Stop 3,000 $2.70 $2.00
IRF1503SPBF International Rectifier ComS.I.T. 700 - -
IRF1503STRLPBF Infineon Technologies AG Avnet - $1.19 $1.09
IRF1503STRLPBF Infineon Technologies AG Allied Electronics & Automation - $3.65 $3.10
IRF1503STRLPBF Infineon Technologies AG Future Electronics - $1.34 $1.34
IRF150P220 Infineon Technologies AG Avnet - $9.47 $8.08
IRF150P220XKMA1 Infineon Technologies AG Avnet - $9.49 $8.39
IRF150P221XKMA1 Infineon Technologies AG Avnet - $5.19 $4.59

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IRF150 datasheet (58)

Part Manufacturer Description Type PDF
IRF150 Harris Semiconductor Power MOSFET Selection Guide Original PDF
IRF150 International Rectifier HEXFET Transistor Original PDF
IRF150 Intersil 40A, 100V, 0.055 ?, N-Channel Power MOSFET Original PDF
IRF150 Nikkohm 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED Original PDF
IRF150 Semelab N-Channel Power MOSFET Original PDF
IRF150 Fairchild Semiconductor N-Channel Power MOSFETs, 40 A, 60 V/100 V Scan PDF
IRF150 FCI POWER MOSFETs Scan PDF
IRF150 Frederick Components Power MOSFET Selection Guide Scan PDF
IRF150 General Electric Power Transistor Data Book 1985 Scan PDF
IRF150 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 40A. Scan PDF
IRF150 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
IRF150 International Rectifier N-Channel Power MOSFETs Scan PDF
IRF150 International Rectifier TO-39 / TO-3 N-Channel HEXFET Power MOSFETs Scan PDF
IRF150 IXYS High Voltage Power MOSFETs Scan PDF
IRF150 IXYS High Voltage Power MOSFETs Scan PDF
IRF150 IXYS (IRF150 - IRF153) HIGH VOLTAGE POWER MOSFET DIE Scan PDF
IRF150 Motorola European Master Selection Guide 1986 Scan PDF
IRF150 Motorola Switchmode Datasheet Scan PDF
IRF150 Others Semiconductor Master Cross Reference Guide Scan PDF
IRF150 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF

IRF150 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
IRF150

Abstract: circuits of IRF150
Text: PD - 90337G IRF150 JANTX2N6764 JANTXV2N6764 [REF:MIL-PRF-19500/543] 100V, N-CHANNEL , Part Number IRF150 BVDSS 100V RDS(on) 0.055Ω ID 38A The HEXFET®technology is the key , last page www.irf.com 1 08/21/01 IRF150 Electrical Characteristics @ Tj = 25°C (Unless , IRF150 Fig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics www.irf.com , IRF150 13 a& b Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 7. Typical


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PDF 90337G IRF150 JANTX2N6764 JANTXV2N6764 MIL-PRF-19500/543] O-204AA/AE) O-204AE IRF150 circuits of IRF150
LD20A

Abstract: iRF151
Text: ^DS(on) 0.055 a 0.055 fi 0.08 0.08 ·d 40 A 40 A 33 A 33 A TYPE IRF150 IRF151 IRF152 IRF153 VDss , voltage drain current (VGS = 0) Gate-body leakage current (VDg = 0) Iq- 250 fiA for IRF150 /IRF152 for , current Id - 250 /(A 2. 40 33 0.055 0.08 4 V A A 0 0 VDS > Id (on)x RDS(on) max VGS = 10 V for IRF150 /IRF151 for IRF152/IRF153 VGS= 1 0 V for IRF150 /IRF151 for IRF152/IRF153 lD= 20 A RDS (on) Static , V starting Tj = 25°C for IRF150 /IRF151 for IRF152/IRF153 L = 100 jkH 40 33 A A DYNAMIC 9(8


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PDF IRF150 IRF151 IRF152 IRF153 D021753 T-39-13 LD20A
1999 - irf150

Abstract: MOSFET IRF150 TA17421 TB334 circuits of IRF150 40A100V IRF-150
Text: IRF150 Data Sheet March 1999 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET · 40A, 100V , Components to PC Boards" Symbol BRAND D IRF150 TO-204AE IRF150 NOTE: When ordering, include , IRF150 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Voltage , . . . . . . . Tpkg IRF150 100 100 40 25 160 ±20 150 1.2 150 -55 to 150 UNITS V V , IRF150 Source to Drain Diode Specifications PARAMETER SYMBOL Continuous Source to DrainCurrent


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PDF IRF150 TA17421. irf150 MOSFET IRF150 TA17421 TB334 circuits of IRF150 40A100V IRF-150
irf150

Abstract: IRF150 MOSFET LS 5087 MOSFET IRF150 IRF150 To3 package IRF150 "on semiconductor" IRF-150 IRF153 IRF152 IRF151
Text: N-CHANNEL IRF150 /151/152/153 POWER MOSFETS FEATURES • Low RDS(on) • Improved inductive ruggedness â , ) PRODUCT SUMMARY ' Part Number Vos Ros IRF150 100V 0.0550 40A IRF151 60V 0.055Q 40A IRF152 100V 0.08 0 33A IRF153 60V 0.08 0 33A TO-3 MAXIMUM RATINGS Characteristic Symbol IRF150 IRF151 IRF152 , □DOSOflS 4 |u IRF150 /151/152/153 98D 05085 D T-3^-/3 N-CHANNEL POWER MOSFETS ELECTRICAL CHARACTERISTICS , Drain-Source Breakdown Voltage . BVoss IRF150 IRF152 100 V Vgs=0V lo=250f/A IRF151 IRF153 60 - - V Gate


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PDF IRF150/151/152/153 IRF150 IRF151 IRF152 IRF153 ti414E IRF150 MOSFET LS 5087 MOSFET IRF150 IRF150 To3 package IRF150 "on semiconductor" IRF-150
IRF150

Abstract: IRF151 IRF150 MOSFET MOSFET IRF150 IRF150-152 IRF150 "on semiconductor"
Text: MOSFET DATA IRF150-152 ELECTRICAL CHARACTERISTICS OFF CHARACTERISTICS D rain-Source Breakdown , Min Max [ Unit V{BR)DSS IRF150. IRF152 IRF151 'DSS TJ = 125°C) 'g s s f gssr - - 0.2 1 , MOTOROLA TECHNICAL DATA SEMICONDUCTOR IRF150 IRF151 IRF152 TMOS POWER FETs 33 and 40 , Transconductance (V d s > 2.2 v, id = 20 a i (V d s 3s 2.6 V, id = 20 A) IRF150 , IRF151 IRF152 *D(on) IRF150 , IRF151 IRF152 9FS IRF150 , IRF151 IRF152 9 9 - v G Slth) rDS(on) 2 4 Vdc Ohm - - 40


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PDF IRF150 IRF151 IRF152 IRF151. IRF150 MOSFET MOSFET IRF150 IRF150-152 IRF150 "on semiconductor"
IRF150

Abstract: IRF150 MOSFET IRF150 To3 package IRF-150 IRF150 on semi
Text: DD0SDÛ4 a f L' IRF150 /151/152/153 FEATURES Low RDS(on) Improved inductive ruggedness Fast , SUMMARY ' Part Number IRF150 IRF151 IRF152 IRF153 Vds 100V 60V 100V 60V R os IRF150 100 100 IRF151 60 60 ±20 33 20 132 33 20 132 IRF152 100 100 IRF153 60 , Type Min IRF150 100 IRF152 BVoss IRF151 60 IRF153 ALL ALL ALL ALL 2.0 - - - - IRF150 40 IRF151 lD , )XRDS(on) max., fo=20A On-State Drain-Source Current (2) IRF150 IRF151 Static Drain-Source


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PDF 7Tti414E IRF150/151/152/153 IRF150 IRF151 IRF152 IRF153 00GS435 IRF150 MOSFET IRF150 To3 package IRF-150 IRF150 on semi
1997 - IRF150

Abstract: MOSFET IRF150 12V 40A voltage regulators IRF152
Text: S E M I C O N D U C T O R IRF150 , IRF151, IRF152, IRF153 33A and 40A, 60V and 100V, 0.055 and , Surface Mount Components to PC Boards" Symbol D Ordering Information PART NUMBER IRF150 IRF151 IRF152 IRF153 PACKAGE TO-204AE TO-204AE TO-204AE TO-204AE BRAND IRF150 IRF151 IRF152 IRF153 G S , 1824.2 1 IRF150 , IRF151, IRF152, IRF153 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRF150 Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . VDS Drain to


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PDF IRF150, IRF151, IRF152, IRF153 TA17421. IRF150 MOSFET IRF150 12V 40A voltage regulators IRF152
TRANSISTORS 132 GD

Abstract: IRF150 kiv-8 IRF151 circuits of IRF150
Text: Semiconductor IRF150 , IRF151, IRF152, IRF153 33A and 40A, 60V and 100V, 0.055 and 0.08 Ohm , Components to PC Boards" Symbol Ordering Information PART NUM BER IRF150 IRF151 IRF152 IRF153 PACKAGE TO -204AE TO -204AE TO -204AE TO-2Q4AE BRAND IRF150 IRF151 IRF152 IRF153 NOTE: W hen ordering, include , 1997 , File Number 1824.2 IRF150 , IRF151, IRF152, IRF153 Absolute Maximum Ratings T c = 25°c, Unless Otherwise Specified IRF150 Drain to Source Voltage (Note 1 ) .


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PDF IRF150, IRF151, IRF152, IRF153 TA17421. RF152, RF153 TRANSISTORS 132 GD IRF150 kiv-8 IRF151 circuits of IRF150
IRF150

Abstract: circuits of IRF150 IRF150 "on semiconductor" IRF150-153
Text: -' IRF150-153 N-Channel Power MOSFETs, 40 A, 60 V/100 V Power And Discrete Division T-39-13 Description , SEMICONDUCTOR fi4 341^74 00E7Ö71 □ IRF150-153 T-39-13 Electrical Characteristics (Tc = 25°C unless , SEMICONDUCTOR Û4 DËJ 3MbTt= 74 Ü0E7Ö7E 1 IRF150-153 t_39_13 Electrical Characteristics (Cont.) (Te = 25 , SEMICONDUCTOR A4 MT| 3MbTb7H GD27Ö73 3 3469674 FAIRCHILD SEMICONDUCTOR 84D 27873 D . IRF150-153 t , Rating IRF150 /152 Rating IRF151/153 Unit Vdss Drain to Source Voltage1 100 60 V Vdgr Drain to Gate


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PDF IRF150-153 T-39-13 IRF150 circuits of IRF150 IRF150 "on semiconductor" IRF150-153
IRF150

Abstract: R01E MOSFET IRF150 7S001 IRF151 IRF152 IRF153 IRF162 IRF160
Text: _ Standard Power MOSFETs File Number 1824 IRF150 , IRF151, |RF152, IRF153 Power MOS Field-Effect , – Linear transfer characteristics ■High input impedance ■Majority carrier device The IRF150 , DESIGNATION 92CS-3780I JEDEC TO-2Q4AE Absolute Maximum Ratings Parameter IRF150 IRF151 IRF152 IRF153 Units , ?-/3 Standard Power MOSFETs _!_ IRF150 , IRF151, IRF152, IRF153 Electrical Characteristics = 25 , Breakdown Voltage IRF150 IRF152 100 - - V VQS =■OV lD = 2 50/i A IRF151 IRF153 60 - - V ^GSfth


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PDF 7S001 IRF150, IRF151, RF152, IRF153 IRF152 IRF153 IRF150 R01E MOSFET IRF150 IRF151 IRF162 IRF160
IRF150

Abstract: irf 151 IRF152 irf 150 IRF151
Text: MODE POWER MOS TRANSISTORS TYPE IRF150 IRF151 IRF152 IRF153 V DSS RDS(on) 0.055 n 0.055 n 0.08 , leakage current (VDS = 0) lD= 250 /¿A for IRF150 /IRF152 for IRF151/IRF153 VGS= 0 100 60 Tc = 125 , ta - 250 /xA V GS= 1 0 V 2 40 33 4 V A A S> *D (on) x ^ D S to n ) m ax for IRF150 /IRF151 for IRF152/IRF153 ^ D S (on) Static drain-source on resistance VGS = 10 V for IRF150 /IRF151 , current (single pulse) VDD= 30 V starting T j= 2 5 °C for IRF150 /IRF151 for IRF152/IRF153 L = 100 40 33 A


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PDF IRF150 IRF151 IRF152 IRF153 irf 151 irf 150
IRF150

Abstract: irf 151 irf 150 IRF152
Text: ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF150 IRF151 IRF152 IRF153 V DSS ^D S(on) *D 100 V 60 V 100 , IRF150 /IRF152 for IRF151/IRF153 VDS= Max Rating VDS= Max Rating Vg s = ± 2 0 V X VGS= 0 100 60 0.8 Tc , ) x ^DS(on) max for IRF150 /IRF151 for IRF152/IRF153 ^DS (on) Static drain-source on resistance VGS= 1 0 V for IRF150 /IRF151 for IRF152/IRF153 lD = 20 A 0.055 0.08 Q Q ENERGY TEST ^ IS Unclamped inductive switching current (single pulse) VDD= 30 V starting T j= 25 °C for IRF150 /IRF151 for


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PDF IRF150 IRF151 IRF152 IRF153 SC-0338 SC-0339 SC-02/ irf 151 irf 150
IRF150

Abstract: IRF150 MOSFET MOSFET IRF150 IRF-150
Text: HARRIS S E M I C O N D U C T O R IRF150 , IRF151, IRF152, IRF153 33A and 40A, 60V and 100V , IRF150 IRF151 IRF152 IRF153 PACKAGE T0-204AE T0-204AE T0-204AE TO-2Q4AE BRAND IRF150 IRF151 IRF152 IRF153 , Procedures. Copyright © Harris Corporation 1997 , File Number 1824.2 IRF150 , IRF151, ÌRF152, IRF153 Absolute Maximum Ratings Tc = 25°c, Unless Otherwise Specified IRF150 IRF151 60 60 40 25 160 ±20 150 , Drain to Source Breakdown Voltage IRF150 , IRF152 IRF151, IRF153 Gate to Threshold Voltage Zero Gate


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PDF IRF150, IRF151, IRF152, IRF153 TA17421. RF152, IRF150 IRF150 MOSFET MOSFET IRF150 IRF-150
IRF150

Abstract: IRF250 irf054 IRF350
Text: IRF150 IRF150 IRF150 IRF150 IRF150 IRF250 IRF250 IRF250 IRF250 IRF250 IRF350 IRF350 IRF350 IRF350 IRF350


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PDF SHD2301 SHD2191 SHD2181 SHD2181A SHD2181B SHD2302 SHD2192 SHD2182 SHD2182A SHD2182B IRF150 IRF250 irf054 IRF350
2001 - IRF 543 MOSFET

Abstract: irf150 MOSFET IRF150 circuits of IRF150 JANTX2N6764 JANTXV2N6764 90337G
Text: PD - 90337G IRF150 JANTX2N6764 JANTXV2N6764 [REF:MIL-PRF-19500/543] 100V, N-CHANNEL , Number IRF150 BVDSS 100V RDS(on) 0.055 ID 38A The HEXFETtechnology is the key to , /21/01 IRF150 Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter , Conditions Typical socket mount For footnotes refer to the last page 2 www.irf.com IRF150 , IRF150 13 a& b Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 7. Typical


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PDF 90337G IRF150 JANTX2N6764 JANTXV2N6764 MIL-PRF-19500/543] O-204AA/AE) --TO-204AE IRF 543 MOSFET irf150 MOSFET IRF150 circuits of IRF150 JANTX2N6764 JANTXV2N6764 90337G
irf150

Abstract: VN64GA IRF1501 IRF152 IRF153 IRF151 IRF-150 1RF720 IRF150 To3 package I304
Text: = 25°C unless otherwise noted) Drain-Source Voltage , . 100V IRF153. 60V Drain-Gate Voltage IRF150. , 150 irf150 100 0.08 33.0 150 irf152 100 0.085 27.0 125 irf140 100 0.11 24.0 125 irf142 100 , 1.4 20 vn2406d Siliconix 1-5 IRF150 ■IRF151 100V IRF152 ■IRF153 N-Channel Enhancement Mode , Designs ■Improved Reliability Product Summary Part Number bvdss "dS(ON| IRF150 100 V


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PDF irf150 irf152 irf140 irf142 vn1000a irf130 vn1001a irf132 irf120 irf122 irf150 VN64GA IRF1501 IRF152 IRF153 IRF151 IRF-150 1RF720 IRF150 To3 package I304
IRF162

Abstract: IRF161 IRF152 IRF163 IRF150 1RF16 circuits of IRF150 IRF153 IRFI50 MOSFET "CURRENT source" impedance
Text: Standard Poweir MOSFETs - File Number 1824 Power MOS Field-Effect Transistors IRF150 , IRF151 , IRF150 , IRF151, IRF152 and IRF153 are n-channel enhancement-mode silicon-gate power field-effect , Temperature 300 (0.063 in. ( 1.6mm) from case for 10s) °c 3-69. Standard Poweir MOSFETs - IRF150 , Type Min. Typ. Max. Units Test Conditions BVqss Drain Source Breakdown Voltage IRF150 IRF152 100 - - , ) On-State Drain Current (2) IRF150 IRF151 40 - - A VDS > 'otonl * R0S(onl max.' VGS " ,0V IRF152 IRF153


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PDF IRF150, IRF151, IRF152, IRF153 IRF152 IRF153 75BVDSS IRF162 IRF161 IRF163 IRF150 1RF16 circuits of IRF150 IRFI50 MOSFET "CURRENT source" impedance
IRF160

Abstract: 1RF151
Text: Inductive L o a d s IRF150 IRF151 IRF152 T M O S P O W E R F ET s 33 and 40 A M P E R E S tD S (o n ) = , | Unit V(BR)DSS IRF150 , IRF152 1RF151 ID S S TJ - 125°C) Ig s s f iq s s r Vdc 100 60 mAdc .0.2 1 100 100 nAdc nAdc - - VGS(th) rDS(on) IRF150 ,1RF151 IRF152 *D|onÎ IRF150 , IRF151 IRF152 9FS IRF150 , IRF151 IRF1S2 2 4 Vdc Ohm - - 40 33 9 9 0.055 0.080 Adc - - mhos - - C


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PDF IRF150 IRF151 IRF152 1RF151 IRF150, IRF152 IRF160
2001 - circuits of IRF150

Abstract: MOSFET IRF150 IRF 543 MOSFET irf150 JANTX2N6764 JANTXV2N6764
Text: PD - 90337F IRF150 JANTX2N6764 JANTXV2N6764 [REF:MIL-PRF-19500/543] 100V, N-CHANNEL , Part Number IRF150 BVDSS 100V RDS(on) 0.055 ID 38A The HEXFETtechnology is the key to , /22/01 IRF150 Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified , Conditions Typical socket mount For footnotes refer to the last page 2 www.irf.com IRF150 , IRF150 13 a& b Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 7. Typical


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PDF 90337F IRF150 JANTX2N6764 JANTXV2N6764 MIL-PRF-19500/543] O-204AA/AE) parallelin52-7105 circuits of IRF150 MOSFET IRF150 IRF 543 MOSFET irf150 JANTX2N6764 JANTXV2N6764
MOSFET IRF150

Abstract: IRF150 MOSFET HA711
Text: -43 ! H E 0 I 4â55H S2 0 OCH üb 7 ? I IRF150 , IRF151, IRF152, IRF153 Devices , Junction and Storage Temperature Range Lead Temperature 150 1.2 IRF150 100 100 30 25 160 IRF151 60 60 30 25 , °C (Unless Otherwise Specified) Parameter SVd SS Drain - Source Breakdown Voltage Type IRF150 IRF152 1RF151 , IRF153 RoS(on) Static Drain-Source On-State . . . Resistance ® IRF150 IRF151 IRF152 IRF153 flfs C iss C 0 , socket mount 0.1 - - 30 G-44 4 3 5 5 4 5 2 OQOIDbfl 'I I " IRF150 , IRF151, IRF152, IRF153


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PDF T-39-13 IRF15Ü IRF151 IRF15S IRF153 MOSFET IRF150 IRF150 MOSFET HA711
2005 - IRF2001

Abstract: No abstract text available
Text: , IRF150 , IRF200, IRF250 A±1.0 B±0.3 C D±0.3 E±0.3 F±0.3 G Weight (g) E IRN100 120 , 70 4-φ5.3 155 IRF300, IRF400, IRF500 IRF150 120 80 10 100 70 4-φ5.3 200 IRF200 , IRF150 IRF200 IRF250 IRF300 IRF400 IRF500 50 Rating Power(W) IRN100 100 150 , air IRN100, IRF100 Free air IRN150, IRF150 Free air IRN200 Free air IRF250, IRF300 Free air IRF400


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PDF IRN50 IRN50, IRN100, IRN150, IRF100, IRF150, IRF200, IRF250 IRN100 IRN150 IRF2001
71 DT4

Abstract: SHD2251 SHD2265 SHD2264 SHD2263 SHD2262 SHD2261 IRFY440 IRFY340 IRFY240
Text: 0.6 IRF150 SHD2183 200 30 19 150 .85 19 0.6 IRF250 SHD2184 400 14 9 150 .30 9 0.6 IRF350 SHD2185 , 0.6 IRF054 SHD2182A 100 38 24 150 .055 24 0.6 IRF150 SHD2183A 200 30 19 150 .085 19 0.6 IRF250 , 3.5 0.6 IRFAG50 SHD2181B 60 45 31 150 .02 21 0.6 IRF054 SHD2182B 100 38 24 150 .055 24 0.6 IRF150 , SHD2302 100 25 16 50 .075 16 2.5 IRF150 SHD2303 200 21 14 50 .105 19 2.5 IRF250 SHD2304 400 12 7.9 50 , 60 35 21 125 .02 21 1.0 IRF054 SHD2192 100 30 24 125 .055 20 1.0 IRF150 SHD2193 200 30 19 125 .085


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PDF O-254, O-257) SHD2261 IRFY044 SHD2262 IRFY140 SHD2263 IRFY240 SHD2264 IRFY340 71 DT4 SHD2251 SHD2265 IRFY440 IRFY340 IRFY240
IRF150M

Abstract: No abstract text available
Text: 135 IRF150 THER M AL DATA case Rlhi-a^nb R thcs Ti T h e rm a l T h e rm a l T h e rm a l M , ss C 0 ss C ss 2 6 136 Æ T SGS-THOMSON " 7# fsiDiDHBiaLiicl'raomiios IRF150 , Thermal Im pedance *7 # X = 7 SCS-THOMSON 3/6 saoosmauiCTWBira 137 IRF150 Derating , Characteristics Transconductance Static Drain-source On Resistance 4/6 SCS-THOMSON 138 IRF150 , 139 IRF150 Unclam ped Inductive Load Test Circuit Unclam ped Inductive W aveform s V (B R


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PDF IRF150 IRF150M
IRF series

Abstract: for driver circuit for mosfet IRF240 IRF350 MOSFET driver aK 9AA diode IRF 543 MOSFET irf460 IRF 870 gate driver for mosfet irf9130 IRF 810 irf150 compliment
Text: . Table A DEVICE IRF034 IRF044 IRF054 IRF130 IRF140 IRF150 IRF230 IRF240 IRF250 IRF330 IRF340 IRF350 , IRF150 IRF250 IRF350 IRF450 100V 200V 400V 500V 100 V 200V 400V 500V 14.0 9.0 5.5 4.5 38.0 30.0 14.0 12.0 , 300 (0.63 in. (1.6 mm) from case for 10s) 11.5 (typical) 9 Part Number IRF140 28 20 112 125 1.0 IRF150 , . IRF034 IRF044 IRF054 IRF130 IRF140 IRF150 IRF230 IRF240 IRF250 IRF330 IRF340 IRF350 IRF360 N-Channel , Temperature Coefficient of Breakdown Voltage Part Number Min. IRF034 IRF044 IRF054 IRF130 IRF140 IRF150 IRF230


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PDF
IRF732P

Abstract: SGSP3055 IRF722P IRF730P IRF540FI SGSP381 irf522p SGSP312 IRF510 1rfp450
Text: BUZ71P BUZ72A BUZ73A BUZ74 BUZ74A BUZ76 BUZ76A BUZ353 BUZ354 IRF140 IRF141 IRF142 IRF143 IRF150 IRF151 , BUZ72A SGSP367 BUZ74 BUZ74A BUZ76 BUZ76A BUZ353 BUZ354 IRF140 IRF141 IRF142 IRF143 IRF150 IRF151 IRF152 , SGSP477 IRFP150 IRFP150 SGSP492 SGSP491 SGSP574 SGSP579 SGSP575 SGSP575 SGSP577 SGSP577 IRF150 IRF150 , IRF152 IRF150 SGSP577 SGSP574 SGSP575 SGSP575 SGSP577 487 307 307 493 493 493 499 505 505 511 511 517


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PDF 2SK295 2SK296 2SK308 2SK310 2SK311 2SK312 2SK313 2SK319 2SK320 2SK324 IRF732P SGSP3055 IRF722P IRF730P IRF540FI SGSP381 irf522p SGSP312 IRF510 1rfp450
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