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Part Manufacturer Supplier Stock Best Price Price Each Buy Part
DIRF14160 Thomas & Betts Sager - $1207.02 $1158.73
IRF141 International Rectifier Rochester Electronics 33 $2.10 $1.71

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IRF141 datasheet (24)

Part Manufacturer Description Type PDF
IRF141 Intersil 28A and 25A, 80V and 100V, 0.077 and 0.100 ?, N-Channel Power MOSFETs Original PDF
IRF141 Fairchild Semiconductor N-channel power MOSFET, 27 Amp, 60V Scan PDF
IRF141 FCI POWER MOSFETs Scan PDF
IRF141 Frederick Components Power MOSFET Selection Guide Scan PDF
IRF141 General Electric Power Transistor Data Book 1985 Scan PDF
IRF141 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
IRF141 International Rectifier N-Channel Power MOSFETs Scan PDF
IRF141 International Rectifier TO-39 / TO-3 N-Channel HEXFET Power MOSFETs Scan PDF
IRF141 Motorola European Master Selection Guide 1986 Scan PDF
IRF141 Motorola TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39 Scan PDF
IRF141 Motorola Switchmode Datasheet Scan PDF
IRF141 Others Semiconductor Master Cross Reference Guide Scan PDF
IRF141 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
IRF141 Others FET Data Book Scan PDF
IRF141 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
IRF141 Others Shortform Datasheet & Cross References Data Scan PDF
IRF141 National Semiconductor N-Channel Power MOSFETs Scan PDF
IRF141 Samsung Electronics N-CHANNEL POWER MOSFETS Scan PDF
IRF141 Semelab MOS Power Transistor Scan PDF
IRF141 Siliconix MOSPOWER Design Data Book 1983 Scan PDF

IRF141 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
IRF140

Abstract: IRF141 IRF143 IRF142 to204ae IRF140 HARRIS IRF140 ir
Text: IRF140, IRF141 , IRF142, IRF143 28A and 25A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs , NUMBER IRF140 IRF141 IRF142 IRF143 PACKAGE TO-204AE TO-204AE TO-204AE TO-2Q4AE BRAND IRF140 IRF141 IRF142 , 1998 . File Number 2306.2 IRF140, IRF141 , IRF142, IRF143 Absolute Maximum Ratings Tc = 25 , . T l 100 -55 to 175 300 100 100 28 20 110 ±20 150 1.0 IRF141 80 80 28 20 110 ±20 150 1.0 100 -55 to , 0V (Figure 10) MIN TYP MAX UNITS Drain to Source Breakdown Voltage IRF140, IRF142 IRF141 , IRF143


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PDF 077i2 IRF140, IRF141, IRF142, IRF143 IRF140 IRF141 IRF143 IRF142 to204ae IRF140 HARRIS IRF140 ir
IRF140

Abstract: IRF141 IRF142 IRF143 irf14
Text: Number Vos Ros IRF141 60V 0.085Q 27A IRF142 ' 100V 0.110 24A IRF143 60V 0.110 24A MAXIMUM RATINGS Characteristic Symbol IRF140 IRF141 IRF142 IRF143 Unit Drain-Source Voltage , 100 - - V Vqs=0V Id=250/ IRF141 IRF143 60 - - V Gate Threshold Voltage VGStth) all 2.0 — 4.0 , ) lD(on) IRF140 IRF141 27 - A VDS>lD(on)XRDS(on) max., Vgs=10V IRF142 IRF143 24 - - a Static Drain-Source On-State Resistance (2) Rosfon) IRF140 IRF141 - 0.Ó6 0.085 0 Vqs=10V, ID=15A IRF142 IRF143 -


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PDF IRF140/141/142/143 IRF140 IRF141 IRF142 IRF143 IRF142 s-50V irf14
IRF G40

Abstract: G37 IRF IRF1401 IRF142 IRF141 IRF143 IRF140 IOR IRF140 IRF140 ir irf 044 mosfet
Text: IRF141 IRF142 IRF143 V DS 100V 80V 100V 80V RDS(on) 0.0770 0.0770 0.1000 0.1000 *D 28A 28A 25A 25A , -3 fio o c IRF140, IRF141 , IRF142, IRF143 Devices HE D 1 4055455 OOG^OST fl I , Dissipation Linear Derating Factor VGS eas * T-39-13 IRF140, IRF141 28 20 110 150 1.2 ±20 100 (See Fig , ecified ) Parameter B Vpss DraJrvto-Source Breakdown Voltage Type IRF140 IRF142 IRF141 IRF143 R os(on) Static DraJn-to-Source On-State Resistance ® IRF140 IRF141 IRF142 IRF143 *D(on) On-State Drain Current


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PDF 5S455 00QTQ5Ô O-204AE IRF140, IRF141, IRF142, IRF143 S54S2 T-39-13 IRF G40 G37 IRF IRF1401 IRF142 IRF141 IRF140 IOR IRF140 IRF140 ir irf 044 mosfet
power mosfet IRF14

Abstract: IRF140 IRF143 IRF141 IRF142
Text: IRF140 100V 0.0850 27A IRF141 60V 0.085Q 27A IRF142 ' 100V 0.110 24A IRF143 60V 0.110 24A MAXIMUM RATINGS Characteristic Symbol IRF140 IRF141 IRF142 IRF143 Unit Drain-Source Voltage (1) Voss 100 60 100 60 Vdc Drain-Gate , =250/ IRF141 IRF143 60 - - V Gate Threshold Voltage V<3S(th) all 2.0 — 4.0 V VDS=VQS, ID , Vos=Max. RatingX0.8, Vgs=0V, Tc=125°C On-State Drain-Source Current (2) lD(on) IRF140 IRF141 27 - A VDS , ) Rosfon) IRF140 IRF141 - 0.Ó6 0.085 0 Vqs=10V, ID=15A IRF142 IRF143 - 0.09 0.11 0 Forward


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PDF IRF140/141/142/143 IRF140 IRF141 IRF142 IRF143 IRF142 S-60V power mosfet IRF14
IRF140

Abstract: IRF141 IRF142 IRF143 F140
Text: ) PRO DUCT SUM M ARY Part Num ber IR F140 IRF141 IR F142 IR F143 ' Vos 100V 60V 100V 60V RosIRF140 100 100 IRF141 , IRF141 60 IR F143 - 4 .0 100 -1 0 0 250 1000 G ate Threshold Voltage Gate-Source Leakage Forward , Drain-Source Current (2) lD(on) IR F140 27 IRF141 IR F142 IR F143 IR F140 IRF141 IR F142 IR F143 24 - , IR F140 IRF141 IR F142 IR F143 IR F140 IRF141 IR F142 IR F143 IR F140 IRF141 IR F142 IR F143 ALL M in


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PDF IRF141 00GS435 F--13 IRF140 IRF142 IRF143 F140
VN64GA

Abstract: IRF142 IRF140 IRF540 75 LS 541 IRF143 Part number 543 20 018 00 IRF141 IRF132 IRF120
Text: IRF151 TO-3 6Cl 0.08 33.0 150 IRF153 60 0.085 27.0 125 IRF141 60 0.11 24.0 125 IRF143 60 0.12 18.0 , 1.4 20 VN2406D Siliconix 1-5 IRF140 ■IRF141 ■IRF142 ■IRF143 IRF540 - IRF541 ■IRF542 â , Part Number BVcss rDS(ON) >d Package IRF140 100 V 0.085B 27A IRF141 60V TO-3 IRF142 100 V 0.11à , IRF140,142, 540, 542 . 100V IRF141 ,143, 541,543 . . 60V Drain-Gate Voltage IRF140,142,540,542 . 100V IRF141 ,143, 541


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PDF IRF150 IRF152 IRF140 IRF142 VN1000A IRF130 VN1001A IRF132 IRF120 IRF122 VN64GA IRF142 IRF140 IRF540 75 LS 541 IRF143 Part number 543 20 018 00 IRF141 IRF132 IRF120
IRF140

Abstract: IRF142 IRF141 IRF143 IFIF141
Text: Standard Power MOSFETs- IRF140, IRF141 , IRF142, IRF143 Power MOS Field-Effect Transistors File , DESIGNATION 92CS-37BOI JEDEC TQ-204AE Absolute Maximum Ratings Parameter IRF140 IRF141 IRF142 IRF143 Units , (0.063 in. ( 1,6mm) from case for 10s) °c 3-64. Standard Power MOSFETs IRF140, IRF141 , IRF142 , 250|iA IRF141 IRF143 60 - - V Vgs(th) Gate Threshold Voltage ALL 2.0 - 4.0 V VDS = VGS' 'D = 250 , © IRF140 IRF141 27 - - A VDS > 'D(on) * RDS(on) max.' VGS = 10V IRF142 IRF143 24 - - A ^DS(on


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PDF IRF140, IRF141, IRF142, IRF143 IFIF141, RF142 75BV0SS IRF140 IRF142 IRF141 IFIF141
IRF540

Abstract: irf140 75 LS 541 IRF542 irf540 27 MHz IRF142 IRF141 VN1706D IRF622 IRF630
Text: 1.2 6.25 VN35AB 1-6 Siliconix IRF140 ■IRF141 ■IRF142 ■IRF143 IRF540 - IRF541 ■IRF542 â , Part Number BVcss rDS(ON) >d Package IRF140 100 V 0.085B 27A IRF141 60V TO-3 IRF142 100 V 0.11à , IRF140,142, 540, 542 . 100V IRF141 ,143, 541,543 . . 60V Drain-Gate Voltage IRF140,142,540,542 . 100V IRF141 ,143, 541 , DSS Voltage IRF140, 142 IRF540, 542 100 V Vqs = 0, Id = 250MA IRF141 , 143 IRF541, 543 60 vGS


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PDF IRF640 IRF642 IRF630 IRF632 IRF620 IRF622 VN1706D IRF641 IRF643 IRF631 IRF540 irf140 75 LS 541 IRF542 irf540 27 MHz IRF142 IRF141 VN1706D IRF622 IRF630
TP8N10

Abstract: th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40
Text: BUZ76A BUZ353 BUZ354 IRF140 IRF141 IRF142 IRF143 IRF150 IRF151 IRF152 IRF153 IRF240 IRF241 IRF242 IRF243 , BUZ71FI BUZ72A SGSP367 BUZ74 BUZ74A BUZ76 BUZ76A BUZ353 BUZ354 IRF140 IRF141 IRF142 IRF143 IRF150 IRF151 , SGSP574 SGSP579 SGSP575 SGSP575 SG SP577 SG SP577 IRF350 IRF350 IRF451 IRF450 IRF142 IRF142 IRF141 IRF141 , IRF142 IRF141 IRF141 SGSP351 SGSP351 SGSP317 SGSP317 IRF821 IRF820 SGSP358 IRF733 IRF732 IRF831 IRF830


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PDF 2SK295 2SK296 2SK308 2SK310 2SK311 2SK312 2SK313 2SK319 2SK320 2SK324 TP8N10 th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40
IRF732P

Abstract: SGSP3055 IRF722P IRF730P IRF540FI SGSP381 irf522p SGSP312 IRF510 1rfp450
Text: BUZ71P BUZ72A BUZ73A BUZ74 BUZ74A BUZ76 BUZ76A BUZ353 BUZ354 IRF140 IRF141 IRF142 IRF143 IRF150 IRF151 , BUZ72A SGSP367 BUZ74 BUZ74A BUZ76 BUZ76A BUZ353 BUZ354 IRF140 IRF141 IRF142 IRF143 IRF150 IRF151 IRF152 , IRF142 IRF142 IRF141 IRF141 IRF140 IRF140 SGSP592 SGSP591 IRF721 IRF720 SGSP330 SGSP319 IRF721 IRF720 , S G S -TH O M S O N S G S -TH O M S O N N E A R E S T IRF451 SGSP577 SGSP577 IRF142 IRF142 IRF141 IRF141 SGSP351 SGSP351 SGSP317 SGSP317 IRF821 IRF820 SGSP358 IRF733 IRF732 IRF831 IRF830 IRF743 IRF742


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PDF 2SK295 2SK296 2SK308 2SK310 2SK311 2SK312 2SK313 2SK319 2SK320 2SK324 IRF732P SGSP3055 IRF722P IRF730P IRF540FI SGSP381 irf522p SGSP312 IRF510 1rfp450
IRF 142

Abstract: IRF142 IRF140 IRF143 IRF141
Text: / = 7 SGS-THOMSON RíflO»ilL[lOT®ROD©S IRF 140 - 141 IRF 142 - 143 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF140 IRF141 IRF142 IRF143 · · · · VD S S 100 V 80 V 100 V 80 V , leakage current (VDS = 0) lD = 250 /xA for IRF140/IRF142 for IRF141 /IRF143 VGS= 0 100 80 Tc = 125°C 250 , ) ^D(on) Gate threshold voltage V p s - ^G S On-state drain current for IRF140/ IRF141 for IRF142 , ) Static drain-source on resistance VGS= 10 V for IRF140/ IRF141 for IRF142/IRF143 lD= 17 A 0.077


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PDF IRF140 IRF141 IRF142 IRF143 IRF 142 IRF143
IRF 140

Abstract: IRF143 IRF141 IRF142 IRF140
Text: S 7 SGS-THOMSON ilLltgTTlMIDtgl J m T M IRF 140 -141 IRF 1 4 2 - 1 4 3 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF140 IRF141 IRF142 IRF143 · · · · V DSS R DS(on) 'd 100 V , IRF141 /IRF143 VGS= 0 100 80 Tc = 125°C V V /x A bss ·g s s VDS= Max Rating VDS= Max Rating x , ^D S - ^G S *D - 250 10 V 2 28 25 V DS > ta (on) x R DS(on) for IRF140/ IRF141 for , / IRF141 for IRF142/IRF143 lD= 17 A 0.077 0.100 n Q DYNAMIC 9fs * Forward transconductance


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PDF IRF140 IRF141 IRF142 IRF143 IRF 140 IRF143
Not Available

Abstract: No abstract text available
Text: 100 V 0.077 fi 0.077 fi 0.100 fi 0.100 fi 28 A IRF141 100 V IRF143 • • â , Draln-source breakdown voltage lD= 250 iiA for IRF140/IRF142 for IRF141 /IRF143 Idss Zero gate , 10V S Static drain-source on resistance VGS= 10 V for IRF140/ IRF141 for IRF142/IRF143 A A 28 25 for IRF140/ IRF141 for IRF142/IRF143 R d S (on) 2 lD= 17 A 0.077 0.100 n


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PDF IRF140 IRF141 IRF143 IRF142 r-39-Ã
IRF540

Abstract: irf540 TTL IRF5405 IRF140 LEM 543 IRF140-143 24A15 IRF1401 irf540 27 MHz irf540 be
Text: Requirements • Ease of Paralleling Product Summary TO-22QAB IRF140 IRF141 IRF142 IRF143 IRF540 IRF541 , ft 27 A 17 A TO-204AE IRF141 60 V 0.085 ft 27 A 17 A IRF142 100 V 0.11 n 24 A 15 A IRF143 60 V , Characteristic Rating IRF140/142 IRF540/542 Rating IRF141 /143 IRF541/543 Unit Voss Drain to Source Voltage1 100 , (br)dss Drain Source Breakdown Voltage1 IRF140/142/540/542 IRF141 /143/541/543 V Vgs = 0 V, lD = 250


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PDF 34feitib74 IRF140-143/IRF540-543 O-22QAB IRF140 IRF141 IRF142 IRF143 IRF540 IRF541 IRF542 irf540 TTL IRF5405 LEM 543 IRF140-143 24A15 IRF1401 irf540 27 MHz irf540 be
irf540 equivalent

Abstract: IRF541 equivalent vn89af equivalent IRF540 irf640 vn0106n1 VN0109n5 IRF520 equivalent IRF240 IRF232
Text: IRF140 ■IRF141 ■IRF142 ■IRF143 IRF540 - IRF541 ■IRF542 ■IRF543 S Siliconix 100V , Package IRF140 100 V 0.085B 27A IRF141 60V TO-3 IRF142 100 V 0.11Ö 24A IRF143 60V IRF540 , , 542 . 100V IRF141 ,143, 541,543 . . 60V Drain-Gate Voltage IRF140,142,540,542 . 100V IRF141 ,143, 541,543 , DSS Voltage IRF140, 142 IRF540, 542 100 V Vqs = 0, Id = 250MA IRF141 , 143 IRF541, 543 60 vGS


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PDF O-220 VN1000D IRF522 VN1000A IRF540 IRF632 IRF640 irf540 equivalent IRF541 equivalent vn89af equivalent IRF540 vn0106n1 VN0109n5 IRF520 equivalent IRF240 IRF232
e14B

Abstract: IRF1401 141r IRF140
Text: N-CHANNEL POW ER MOSFETs UNITS V V A A A V W N -C H A N N E L EN HANCEM ENT MODE D IRF141 IRF141R 80 80 , Characteristics · High Input Impedance Description The IRF140, IRF141 , IRF142, and IRF143 are n-channel enhancement-mode silicon-gate power field-effect transis tors. IRF140R, IRF141R , IRF142R, and IRF143R types are , CHARACTERISTIC Orain-Source Breakdown Voltage IRF14 0/1 42 , IRF140R/142R IRF141 /1 43, IRF141 R/143R Gate , , IR F143 ¡RF140R, IRF141R , 1RF142R, / RF143R Ip. DRAIN CURRENT (AMPERES) FIGURE 12


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PDF IRF140, IRF141, IRF142, IRF143 IRF140R, IRF141R, IRF142R, IRF143R e14B IRF1401 141r IRF140
IRF1401

Abstract: 1RF141 IRF1421 IRF142 IRF140
Text: MOTOROLA TECHNICAL DATA SEMICONDUCTOR IRF140 IRF141 IRF142 TMOS POWER FETs 24 and 27 AMPERES rDS(on) = 0-085 OHM 60 and 100 VOLTS rDS(on) = 0.11 OHMS 100 VOLTS P o w e r Field E ffe c t T ra n sisto r N-Channel Enhancement-Mode Silicon Gate TMOS These TM O S P ow er FETs are designed fo r lo w , IRF141 Symbol Min Max Unit V (BR)DSS 100 60 'D S S Tj V dc - Z e ro G ate V o lta g , d c , 1d = 1 5 A d c ) IRF140, 1RF141 IRF142 1® V) IRF140, IRF141 IRF142 9FS IRF140, IR F U 1 IRF142


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PDF IRF140 IRF141 IRF142 IRF1401 1RF141 IRF1421 IRF142
2SK134 equivalent

Abstract: 2sk135 equivalent 2SJ48 equivalent IRF150 To3 package 2SJ50 equivalent HPWR 6501 HPWR-6503 2SJ49 2sk134 HPWR-6504 2SJ49 equivalent
Text: €” — IRF133 60 0.25 TO-3 IRF133 — — IRF140 100 0.085 TO-3 IRF140 — — IRF141 60 0.085 TO-3 IRF141 — — IRF142 100 0.11 TO-3 IRF142 — — IRF143 60 0.11 TO-3 IRF143 — — IRF150 100 0.055


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PDF PWR-6501 IRF441 HPWR-6502 IRF340 HPWR-6503 HPWR-6504 VN4001A 2SK132 IRF122 2SK134 equivalent 2sk135 equivalent 2SJ48 equivalent IRF150 To3 package 2SJ50 equivalent HPWR 6501 2SJ49 2sk134 2SJ49 equivalent
irf 150 equivalent

Abstract: 2sk135 equivalent hitachi 2sk135 irf150 HPWR-6502 2SK133 IRF331 PM100RLA060 IRF351 irf 111
Text: €” — IRF133 60 0.25 TO-3 IRF133 — — IRF140 100 0.085 TO-3 IRF140 — — IRF141 60 0.085 TO-3 IRF141 — — IRF142 100 0.11 TO-3 IRF142 — — IRF143 60 0.11 TO-3 IRF143 — — IRF150 100 0.055


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PDF PWR-6501 IRF441 HPWR-6502 IRF340 HPWR-6503 HPWR-6504 VN4001A 2SK132 IRF122 irf 150 equivalent 2sk135 equivalent hitachi 2sk135 irf150 2SK133 IRF331 PM100RLA060 IRF351 irf 111
irf150

Abstract: VN64GA 2SK176 IRF223 IRF122 HPWR-6504 HPWR-6503 HPWR-6502 2SK133 2SK132
Text: €” — IRF133 60 0.25 TO-3 IRF133 — — IRF140 100 0.085 TO-3 IRF140 — — IRF141 60 0.085 TO-3 IRF141 — — IRF142 100 0.11 TO-3 IRF142 — — IRF143 60 0.11 TO-3 IRF143 — — IRF150 100 0.055 , 0.08 33.0 150 IRF153 60 0.085 27.0 125 IRF141 60 0.11 24.0 125 IRF143 60 0.12 18.0 100 VN0600A


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PDF PWR-6501 IRF441 HPWR-6502 IRF340 HPWR-6503 HPWR-6504 VN4001A 2SK132 IRF122 irf150 VN64GA 2SK176 IRF223 2SK133
irf113

Abstract: IRF224 buz90 buzh F133 IRF035 IRF034 IRF123
Text: * 25 TO-204AE IRF141 IR N 60 ±20 27 125 ±100 ±20 250 80 2.0 4.0 0. 25 0.085 10 17 28 10 6.0 17 1600 , 100 ±20 27 125 ±100 ±20 250 100 2 4 0. 25 0.085 10 15 27 10 6.0 15 1600 800 300 25 TO-204AE IRF141 , -3 IRF140 SAMSUNG N 100 0.017 28 T0-3 IRF141 SAMSUNG N 80 0.077 28 TO , ±20 250 100 2.0 4.0 0.085 10 _15, 27 10 6.0 15 1600 800 300 25 TO-204AE IRF141 SILICONIX N 60 ±20 27


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PDF 1RF9Z32 O-220AB 1RF48 IRF034 O-204AE IRF250 IRF252 irf113 IRF224 buz90 buzh F133 IRF035 IRF123
IRF1401

Abstract: IRF140 IRF141
Text: IRF140/D86EL2 IRF141 /D86EK2 UNITS Drain-Source Voltage VdSS 100 60 Volts Drain-Gate Voltage, Rqs = 1Mfl , ) IRF141 /D86EK2 BVdsS 100 60 — — Volts Zero Gate Voltage Drain Current (VDs = Max Rating, Vqs = 0V


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PDF Tc-25 100ms RF141/D88EK2 IRF140/D86EL2 IRF1401 IRF140 IRF141
IRFD110

Abstract: IRF5134 1RF542 IRF120 IRF540 IRF611-3 IRFD111 IRF522 IRFD1Z3 IRF510
Text: 0.18 IRF131 IRF531 24 0.11 IRF143 IRF543 27 0.085 IRF141 IRF541 33 0.08 IRF153 IRFP153


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PDF O-247 O-204 O-205 O-220 IRFD113 IRFD111 IRFD123 IRFD121 IRFF113 IRFF111 IRFD110 IRF5134 1RF542 IRF120 IRF540 IRF611-3 IRFD111 IRF522 IRFD1Z3 IRF510
Not Available

Abstract: No abstract text available
Text: ) IRF141 IRF141R IR F142 IRF142R IRF143 IRF143R UNITS 100 100 80 80 100 100 80 , Impedance Description Term inal Diagram The IRF140, IRF141 , IRF142, and IRF143 are n-channel enhancement-mode silicon-gate power (ield-effect transis­ tors. IRF140R, IRF141R , IRF142R, and IRF143R types are , /1 43, IRF141 R /143R Gate Threshold Voltage TYP 80 bvdss MIN TE S T C O NDITIO NS


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PDF IRF140/141/14 IRF140R/141R/142R/143R IRF140, IRF141, IRF142, IRF143 IRF140R, IRF141R, IRF142R, IRF143R
Not Available

Abstract: No abstract text available
Text: IRF141 Transistors N-Channel Enhancement MOSFET Military/High-RelN V(BR)DSS (V)80 V(BR)GSS (V)20 I(D) Max. (A)28 I(DM) Max. (A) Pulsed I(D)20 @Temp (øC)100 IDM Max (@25øC Amb)110 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)-55õ Maximum Operating Temp (øC)175õ Thermal Resistance Junc-Case1 Thermal Resistance Junc-Amb.30 V(GS)th Max. (V)4 V(GS)th (V) (Min)2 @(VDS) (V) (Test Condition) @I(D) (A) (Test Condition)250u I(DSS) Max. (A)1m


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