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Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
IRF1404STRLPBF Infineon Technologies AG Power Field-Effect Transistor, 75A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
IRF1404ZSTRLPBF Infineon Technologies AG Power Field-Effect Transistor, 75A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
IRF1404STRRPBF Infineon Technologies AG Power Field-Effect Transistor, 75A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
IRF1404SPBF Infineon Technologies AG Power Field-Effect Transistor, 75A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
IRF1404ZSPBF Infineon Technologies AG Power Field-Effect Transistor, 180A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
IRF1404ZPBF Infineon Technologies AG Power Field-Effect Transistor, 75A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3

IRF1404 equivalent Datasheets Context Search

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IRF1405 equivalent

Abstract: IRF1404 IRF1405 irf1010n application schematic Avalanche Rugged Technology AVALANCHE TRANSISTOR automotive solenoid transistor irf14042 modern transistor substitute Advanced Power Technology Avalanche Energy
Text: ) , illustrating high ruggedness and low RDS(on) for equivalent die sizes. Normailzed New/Old, 25C 0.9 , demonstrates this [2] showing actual destruct avalanche current for a 4m, 40V, IRF1404 device plotted versus , maintaining lowest RDS(on) . 2 RTotal = Rsolenoid + R DS ( on ) IRF1404 Ias-destruct vs. Tstart , 2 Starting Temperature (C) Figure 4. Ias-destruct versus Tstart for IRF1404 . [2] and , junction temperature is given by As an example, we use an IRF1404 to drive an inductive load such as a


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PDF ED-13, IRF1404 AN-1005, IRF1405 equivalent IRF1404 IRF1405 irf1010n application schematic Avalanche Rugged Technology AVALANCHE TRANSISTOR automotive solenoid transistor irf14042 modern transistor substitute Advanced Power Technology Avalanche Energy
Irf1404

Abstract: No abstract text available
Text: PD-91896F IRF1404 l l l l l l l Advanced Process Technology Ultra Low On-Resistance , €“ 0.50 ––– 0.45 ––– 62 °C/W 1 10/10/03 IRF1404 Electrical Characteristics @ , . Package limitation current is 75A. www.irf.com IRF1404 1000 VGS 15V 10V 8.0V 7.0V 6.0V , , Junction Temperature ( ° C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF1404 10000 , (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF1404 220 VDS LIMITED BY PACKAGE


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PDF PD-91896F IRF1404 IRF1010 O-220AB Irf1404
2003 - IRF1404

Abstract: Gate Driver of IRF1404 PD-91896F Gate Driver for IRF1404 tr irf1404 irf1404 to220ab ir
Text: PD-91896F IRF1404 l l l l l l l Advanced Process Technology Ultra Low On-Resistance , 1 10/10/03 IRF1404 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) RDS , limitation current is 75A. www.irf.com IRF1404 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V , Temperature ( ° C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF1404 10000 VGS , Operating Area www.irf.com IRF1404 220 VDS LIMITED BY PACKAGE 200 VGS ID , Drain


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PDF PD-91896F IRF1404 IRF1010 O-220AB IRF1404 Gate Driver of IRF1404 PD-91896F Gate Driver for IRF1404 tr irf1404 irf1404 to220ab ir
Inverter IRF1404

Abstract: IRF1404 FET IRF1404 static characteristics of mosfet amp mosfet schematic circuit 3 phase mosfet drive schematic MOSFET dynamic parameters AN1040 AN-1040 bach
Text: International Rectifier developed the quasi-dynamic model of IRF1404 as an example. In this study, the quasi-dynamic IRF1404 model is applied to an inverter system in a SABER environment to illustrate the advantage , to refine their design 2 www.irf.com AN-1040 The Quasi-Dynamic model of the IRF1404 is shown in Figure 1. The base model is the level 1 static model of the IRF1404 at 25oC. D_Rdson and D_Vt , D_Vt(T j) S Figure 1: Quasi-Dynamic model of IRF1404 M O SF ET S ta rts W orking R D S( O


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PDF AN-1040 Assure2000 Inverter IRF1404 IRF1404 FET IRF1404 static characteristics of mosfet amp mosfet schematic circuit 3 phase mosfet drive schematic MOSFET dynamic parameters AN1040 AN-1040 bach
2005 - IRF1404

Abstract: irf14042 74hc7414 74HC74 schematic application IN4148 AN165 X80200V20I 74HC74 2N7002 LM2903M
Text: is an IRF1404 . To control the slew rate, capacitors are added to the gates of the Power FETs. In , Q1 IRF1404 2 3 VCC VDDH V+ 1 3 Q2 IRF1404 CON4 R14 100K J2 CON5 2 , - 10 4 11 3 13 1 12 2 3 C1 S2 SW DIP-4 Q3 IRF1404 R16 100K U2 VDDH 3 , power-on. This is equivalent to a 330mA load being applied to the 5V output as the FET turns on. Though


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PDF X80200 AN165 IRF1404 irf14042 74hc7414 74HC74 schematic application IN4148 X80200V20I 74HC74 2N7002 LM2903M
Gate Driver of IRF1404

Abstract: Irf 1540 N Irf 1540 G MOSFET IRF 1540 IRF1404 ana 650 IRF1010 ISR9246
Text: -220 contribute to its wide acceptance th roug hout the industry. PD -91896B IRF1404 HEXFET® Power MOSFET , , Flat, Greased Surface 0.50 - ReJA Junction-to-Ambient - 62 www.irf.com 1 11/2/99 IRF1404 , current-handing of the package refer to Design Tip # 93-4 www.irf.com 1 International löR Rectifier IRF1404 , . Typical Transfer Characteristics www.irf.com Fig 4. Normalized On-Resistance Vs. Temperature IRF1404 , Voltage Fig 8. Maximum Safe Operating Area www.irf.com International ISR Rectifier IRF1404 Il II


OCR Scan
PDF O-220 Gate Driver of IRF1404 Irf 1540 N Irf 1540 G MOSFET IRF 1540 IRF1404 ana 650 IRF1010 ISR9246
2000 - IRF1404

Abstract: No abstract text available
Text: IRF1404 TO-220AB l l l l l l Advanced Process Technology Ultra Low On-Resistance , Junction-to-Ambient 0.75 ––– 62 °C/W www.kersemi.com IRF1404 Electrical Characteristics @ TJ = , limitation current is 75A 2 www.kersemi.com IRF1404 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V , Fig 4. Normalized On-Resistance Vs. Temperature 3 www.kersemi.com IRF1404 12000 8000 , TC = 25 ° C TJ = 175 ° C Single Pulse 4 www.kersemi.com IRF1404 200 RD VDS


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PDF IRF1404 O-220AB O-220 O-220 O-220AB IRF1404
Gate Driver of IRF1404

Abstract: Irf 1540 G MOSFET IRF 1540 Irf 1540 N IRF1404
Text: PD -91896C IRF1404 HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra , ­­­ 0.75 ­­­ 62 °C/W 1 2/10/00 IRF1404 Electrical Characteristics @ TJ = 25°C (unless , recommended current-handing of the package refer to Design Tip # 93-4 www.irf.com IRF1404 1000 , . Temperature 3 IRF1404 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + , , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF1404 200 RD VDS


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PDF -91896C IRF1404 O-220 Gate Driver of IRF1404 Irf 1540 G MOSFET IRF 1540 Irf 1540 N IRF1404
1999 - Not Available

Abstract: No abstract text available
Text: PD -TBD IRF1404 HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low , /W www.irf.com 1 6/18/99 IRF1404 V(BR)DSS V(BR)DSS/TJ FOR REVIEW ONLY Electrical , ) ISD 95A, di/dt 150A/µs, VDD V(BR)DSS, TJ 175°C 2 www.irf.com FOR REVIEW ONLY IRF1404 , . Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF1404 12000 FOR REVIEW ONLY VGS , Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com FOR REVIEW ONLY IRF1404 VDS VGS


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PDF IRF1404 O-220
irf14042

Abstract: IRF1404 FET 74HC74 schematic application IRF1404 AN165 IN4148 74HC74 LM2901M LM2903M X80200V20I
Text: IRF1404 . To control the slew rate, capacitors are added to the gates of the Power FETs. In operation , 5 3 REV 1.1 7/1/03 C4 C12 1 2 C6 U4 X80200V20I R12 10K 1 Q3 IRF1404 47nF 3 C5 Q2 IRF1404 2 R13 10K 47nF 4.7nF 47nF 2.2nF C11 1 Q1 IRF1404 2 3 , 5V output prior to power-on. This is equivalent to a 330mA load being applied to the 5V output as


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PDF AN165 X80200 irf14042 IRF1404 FET 74HC74 schematic application IRF1404 AN165 IN4148 74HC74 LM2901M LM2903M X80200V20I
2003 - Gate Driver of IRF1404

Abstract: IRF1404 PD-91896F
Text: PD-91896F IRF1404 l l l l l l l Advanced Process Technology Ultra Low On-Resistance , 1 10/10/03 IRF1404 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) RDS , limitation current is 75A. www.irf.com IRF1404 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V , Temperature ( ° C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF1404 10000 VGS , Operating Area www.irf.com IRF1404 220 VDS LIMITED BY PACKAGE 200 VGS ID , Drain


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PDF PD-91896F IRF1404 IRF1010 O-220AB Gate Driver of IRF1404 IRF1404 PD-91896F
2001 - IRF1404

Abstract: No abstract text available
Text: PD -91896E IRF1404 HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra , ­­­ 0.75 ­­­ 62 °C/W 1 10/20/00 IRF1404 Electrical Characteristics @ TJ = 25 , limitation current is 75A www.irf.com IRF1404 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V , ) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF1404 VGS = 0V, f = 1MHz Ciss = Cgs + , Area www.irf.com IRF1404 200 RD VDS LIMITED BY PACKAGE VGS I D , Drain Current (A


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PDF -91896E IRF1404 O-220 IRF1404
1999 - Not Available

Abstract: No abstract text available
Text: PD -91896 IRF1404 HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low , /W www.irf.com 1 6/23/99 IRF1404 V(BR)DSS V(BR)DSS/TJ FOR REVIEW ONLY Electrical , ) ISD 95A, di/dt 150A/µs, VDD V(BR)DSS, TJ 175°C 2 www.irf.com FOR REVIEW ONLY IRF1404 , . Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF1404 12000 FOR REVIEW ONLY VGS , Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com FOR REVIEW ONLY IRF1404 VDS VGS


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PDF IRF1404 O-220
Not Available

Abstract: No abstract text available
Text: PD -91896D IRF1404 HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low , ­­­ Max. 0.75 ­­­ 62 Units °C/W www.irf.com 1 9/27/00 IRF1404 Electrical , 95A, di/dt 150A/µs, VDD V(BR)DSS, TJ 175°C 2 www.irf.com IRF1404 1000 VGS 15V 10V 8.0V , . Temperature www.irf.com 3 IRF1404 12000 VGS , Gate-to-Source Voltage (V) 10000 VGS = 0V, f , Area 4 www.irf.com IRF1404 200 VDS LIMITED BY PACKAGE RD VGS 160 D.U.T. +


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PDF -91896D IRF1404 O-220
1999 - Gate Driver of IRF1404

Abstract: No abstract text available
Text: PD -91896A IRF1404 HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low , /W www.irf.com 1 7/16/99 IRF1404 Electrical Characteristics @ TJ = 25°C (unless otherwise , , VDD V(BR)DSS, TJ 175°C 2 www.irf.com IRF1404 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V , www.irf.com 3 IRF1404 12000 VGS , Gate-to-Source Voltage (V) 10000 VGS = 0V, f = 1MHz Ciss = , www.irf.com IRF1404 200 LIMITED BY PACKAGE VDS VGS RD 160 D.U.T. + RG I D , Drain


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PDF -91896A IRF1404 O-220 Gate Driver of IRF1404
1999 - IRF1404

Abstract: No abstract text available
Text: PD -91896B IRF1404 HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low , ­­­ Max. 0.75 ­­­ 62 Units °C/W www.irf.com 1 11/2/99 IRF1404 Electrical , www.irf.com IRF1404 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 1000 I D , . Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF1404 12000 VGS , Gate-to-Source , Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF1404 200 LIMITED BY PACKAGE VDS


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PDF -91896B IRF1404 O-220 IRF1404
IRFP460Z

Abstract: IRF3205 application IRF3205 equivalent power MOSFET IRFP460z irfp4004 IRF3808 equivalent IRLL014N IRF1405 equivalent irfz44v equivalent IRF3205
Text: Equivalent device hours @ 90C & 80% of rated voltage 5.5E+07 1.1E+07 6.6E+07 1000 1000 1000 1000 , IRFI9630G 205 150 160 80 1000 0 Equivalent device hours @ 90C & 80% of rated , MOSFETs (continued) Failure Rate in FITs at 60% UCL 0 0 0 0 Equivalent device hours @ 90C & , IRF9620 145 150 160 TO-220, N-channel, Low Voltage IRF3711 IRL3803 IRF1404 IRF1404 IRF1404 IRF1404 IRF1404 IRF2804 IRF2804 IRL1404 IRL1404 IRL1404 IRL1404 IRL1404 IRL1404 IRL1404


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PDF O-220 IRFP460Z IRF3205 application IRF3205 equivalent power MOSFET IRFP460z irfp4004 IRF3808 equivalent IRLL014N IRF1405 equivalent irfz44v equivalent IRF3205
AN941

Abstract: IRF1404 FET IRF1404 Analysis of Avalanche Behaviour for Paralleled MOSFETs FET model Measurement of stray inductance parallel connection of MOSFETs parallel MOSFET Transistors
Text: the internal static avalanche model from operation. An external equivalent circuit of the device , . The equivalent circuit for the quasi-thermal avalanche characteristic is comprised of one diode and , IRF1404 III: Simulation and Results: Half-bridge is a typical topology in motor drive and converter , 200nH inductance. From one lot measurement of IRF1404 , at o 25 C , BV average=42.24V. With 6 sigma


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PDF AN941 Asssure2000 AN941 IRF1404 FET IRF1404 Analysis of Avalanche Behaviour for Paralleled MOSFETs FET model Measurement of stray inductance parallel connection of MOSFETs parallel MOSFET Transistors
AN-994

Abstract: IRF1404 IRF530S 95A TO 95A MARKING
Text: allowable junction temperature. Package limitation current is 75A Use IRF1404 data and test conditions


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PDF IRF1404S/L AN-994 IRF1404 IRF530S 95A TO 95A MARKING
2001 - IRG41BC20W

Abstract: IRG41BC20UD Drive circuit for IGBT using IR2130 IR2184 application notes IR2110 driver CIRCUIT FOR INVERTERS DC MOTOR SPEED CONTROL USING IGBT IRG41BC30W IR2181 application notes IR2103 bldc driver 1KW dc motor
Text: DRIVES IN INDUSTRIAL ELECTRIC VEHICLES IRFBA1404P IRF1404 IRF1404S/L IRF1405S/L IRFP2907 IRF3415


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PDF O-220 IR2130 230VAC IR2133 460VAC IR2233 IR2137/IR2171 IRG41BC20W IRG41BC20UD Drive circuit for IGBT using IR2130 IR2184 application notes IR2110 driver CIRCUIT FOR INVERTERS DC MOTOR SPEED CONTROL USING IGBT IRG41BC30W IR2181 application notes IR2103 bldc driver 1KW dc motor
Not Available

Abstract: No abstract text available
Text: IRF1404 data and test conditions. „ Pulse width ≤ 300µs; duty cycle ≤ 2%. * When mounted on 1


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PDF -93853C IRF1404S IRF1404L IRF1404L)
2001 - AN-994

Abstract: IRF1404 IRF1404L IRF1404S IRF530S
Text: allowable junction temperature. Package limitation current is 75A Use IRF1404 data and test conditions


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PDF -93853C IRF1404S IRF1404L IRF1404L) AN-994 IRF1404 IRF1404L IRF1404S IRF530S
Not Available

Abstract: No abstract text available
Text: IRF1404 data and test conditions. „ Pulse width # 300µs; duty cycle # 2%. * When mounted on 1


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PDF IRF1404SPbF IRF1404LPbF IRF1404L) EIA-418.
2004 - AN-994

Abstract: IRF1404 IRF1404L IRL3103L
Text: IRF1404 data and test conditions. Pulse width 300µs; duty cycle 2%. * When mounted on 1" square PCB


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PDF IRF1404SPbF IRF1404LPbF EIA-418. AN-994 IRF1404 IRF1404L IRL3103L
Irf 1540 N

Abstract: Irf 1540 G IRF1404 93853b MOSFET IRF 1540 Gate Driver of IRF1404 IRF1404S IRF1404L AN-994 60AA
Text: allowable junction temperature. Package limitation current is 75A Use IRF1404 data and test conditions


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PDF -93853B IRF1404S IRF1404L IRF1404L) Irf 1540 N Irf 1540 G IRF1404 93853b MOSFET IRF 1540 Gate Driver of IRF1404 IRF1404S IRF1404L AN-994 60AA
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