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Part Manufacturer Supplier Stock Best Price Price Each Buy Part
IRF122 Harris Semiconductor Rochester Electronics 1,790 $1.10 $0.90
IRF122 International Rectifier Rochester Electronics 731 $1.10 $0.90
IRF1224 Hubbell Wiring Device-Kellems Sager - - -

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IRF122 datasheet (17)

Part Manufacturer Description Type PDF
IRF122 Intersil 8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 ?, N-Channel, Power MOSFETs Original PDF
IRF122 Fairchild Semiconductor N-Channel Power MOSFETs, 11 A, 60-100 V Scan PDF
IRF122 FCI POWER MOSFETs Scan PDF
IRF122 Frederick Components Power MOSFET Selection Guide Scan PDF
IRF122 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 28A. Scan PDF
IRF122 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
IRF122 International Rectifier N-Channel Power MOSFETs Scan PDF
IRF122 International Rectifier TO-39 / TO-3 N-Channel HEXFET Power MOSFETs Scan PDF
IRF122 Motorola European Master Selection Guide 1986 Scan PDF
IRF122 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
IRF122 Others Shortform Transistor PDF Datasheet Scan PDF
IRF122 Others Shortform Datasheet & Cross References Data Scan PDF
IRF122 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
IRF122 Others Semiconductor Master Cross Reference Guide Scan PDF
IRF122 Others FET Data Book Scan PDF
IRF122 Samsung Electronics N-CHANNEL POWER MOSFETS Scan PDF
IRF122 Siliconix MOSPOWER Design Data Book 1983 Scan PDF

IRF122 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
IRF120

Abstract: IRF122
Text: IRF122 IRF123 bvdss * RDS(on) 0.27Ü 0.27Q 0.3 60 0.36Q 1 ID 9.2A 9.2A 8.0A 8.0A 100V 80V 100 V , begin w ith a digit, ie. 2A3B G-19 TO-3 IRF120, IRF121, IRF122 , IRF123 Devices H E , , IRF121 9 *2 D § 4Ô55452 G0CHO43 4 | REC T IFIER IRF122 , IRF123 8 .0 f _ 3 g^ Units A A A , JRF120 IRF122 IRF121 IRF123 RoSfon) Static Drain-to-Source On-State Resistance © IRF120 IRF121 IRF122 IRF123 lo(on) On-State Drain Current © IRF120 IRF121 IRF122 IRF123 V o s(th ) g/s IDSS Gate Threshold


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PDF T0-204AA IRF120, IRF121, IRF122, IRF123 IRF120 IRF122
irf121

Abstract: IRF120 IRF123
Text: iH A R R is O cto be r 1997 IRF120, IRF121, IRF122 , IRF123 8.0A and 9.2A, 80V and 100V, 0.27 , Mount Com ponents to PC Boards" Ordering Information PART NUMBER IRF120 IRF121 IRF122 IRF123 PACKAGE T0-204AA T0-204AA T0-204AA TO-2Q4AA BRAND IRF120 IRF121 IRF122 IRF123 Symbol NOTE: When , . Copyright © Harris Corporation 1997 , pj|e N um ber 1565 2 IRF120, IRF121, IRF122 , ÌRF123 , -55 to 175 300 260 IRF121 80 80 9.2 6.5 37 ±20 60 0.4 36 -55 to 175 300 260 IRF122 100 100 8.0 5.6 32


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PDF IRF120, IRF121, IRF122, IRF123 RF123 irf121 IRF120 IRF123
IRF123

Abstract: IRF120 IRF1 CQ 1565 RT irf121 IRF122 RF123 IRF1Z0
Text: Standard Power MOSFETs- IRF120, IRF121, IRF122 , IRF123 Power MOS Field-Effect Transistors File , . ENHANCEMENT MODE GO-! TERMINAL DIAGRAM The IRF120, IRF121, IRF122 and IRF123 are n-channel , -204AA Absolute Maximum Ratings Parameter IRF120 IRF121 IRF122 IRF123 Units Vq5 Drain • Source Voltage © 100 , -Standard Power MOSFETs IRF120, IRF121, IRF122 , IRF123 Electrical Characteristics @Tq = 25°C (Unless , Voltage IRF1Z0 IRF122 100 - - V vGS = ov lD = 250(1A IRF1.21 IRF123 60 - _ V VQS(th) Gate Threshold


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PDF IRF120, IRF121, IRF122, IRF123 0V-100V IRF122 IRF120 IRF1 CQ 1565 RT irf121 RF123 IRF1Z0
1997 - IRF120

Abstract: irf121 IRF122 IRF123 TB334
Text: IRF120, IRF121, IRF122 , IRF123 Semiconductor 8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm , BRAND IRF120 TO-204AA IRF120 IRF121 TO-204AA IRF121 IRF122 TO-204AA IRF122 , © Harris Corporation 1997 2-1 File Number 1565.2 IRF120, IRF121, IRF122 , IRF123 Absolute , 0.4 36 -55 to 175 IRF121 80 80 9.2 6.5 37 ±20 60 0.4 36 -55 to 175 IRF122 100 100 , µA IRF120, IRF121 9.2 - - A IRF122 , IRF123 8.0 - - A VGS = ±20V -


Original
PDF IRF120, IRF121, IRF122, IRF123 IRF120 irf121 IRF122 IRF123 TB334
irf150

Abstract: VN64GA 2SK176 IRF223 IRF122 HPWR-6504 HPWR-6503 HPWR-6502 2SK133 2SK132
Text: -6504 400 1.0 TO-3 VN4001A 400 1.0 HITACHI 2SK132 100 1.71 TO-3 IRF122 100 0.4 2SK133 120 1.71 TO , 0.30 TO-3 IRF121 — — IRF122 100 0.40 TO-3 IRF122 — — IRF123 60 0.40 TO-3 IRF123 — â , 8.0 40 IRF120 100 0.4 7.0 40 IRF122 90 4.0 1.9 25 2N6658 90 4.5 1.8 25 VN99AA «r 90 5.0 1.7 25 , Siliconix 1-5 IRF120 ■-IRFI21- ■IRF122 ■IRF123 IRF520 ■IRF521 » IRF522 ■IRF523 100V , ) ID Package IRF120 100 V 0.30Q 8A IRF12Ì 60V TO-3 IRF122 100V 0.40D 7 A IRF123 60V IRFS20


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PDF PWR-6501 IRF441 HPWR-6502 IRF340 HPWR-6503 HPWR-6504 VN4001A 2SK132 IRF122 irf150 VN64GA 2SK176 IRF223 2SK133
OA 207 B diode

Abstract: IRF120 IRFI20 dioda 30 Ampere irf121 IRF122 IRF123 IRFt20
Text: MOSFETs File Number 1565 IRF120, IRF121, IRF122 , IRF123 Power MOS Field-Effect Transistors N-Channel , The IRF120, IRF121, IRF122 and IRF123 are n-channel enhancement-mode silicon-gate power field-effect , IRF120 IRF121 IRF122 IRF123 Units Vqs Oram - Source Voltage © 100 60 100 60 V VqgR Drain-Gate Voltage , "ÏÏÏ 3Ö7SGÖ1 DGlflShS 1 01E 18265 dT-37-/ / IRF120, IRF121, IRF122 , IRF123 Electrical , BVOSS Orein - Source Breakdown Voltage IRF120 IRF122 100 - - V VGS = 0V IRF121 IRF123 60 - - V l0 -


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PDF IRF120, IRF121, IRF122, IRF123 0V-100V IRF122 IRF123 OA 207 B diode IRF120 IRFI20 dioda 30 Ampere irf121 IRFt20
1997 - IRF120

Abstract: irf122 irf123
Text: S E M I C O N D U C T O R IRF120, IRF121, IRF122 , IRF123 8.0A and 9.2A, 80V and 100V, 0.27 and , Surface Mount Components to PC Boards" Ordering Information PART NUMBER IRF120 IRF121 IRF122 IRF123 PACKAGE TO-204AA TO-204AA TO-204AA TO-204AA BRAND IRF120 Symbol D G IRF121 IRF122 IRF123 S , 1565.2 1 IRF120, IRF121, IRF122 , IRF123 Absolute Maximum Ratings TC = 25oC, Unless Otherwise , -55 to 175 300 260 IRF122 100 100 8.0 5.6 32 ±20 60 0.4 36 -55 to 175 300 260 IRF123 80 80 8.0 5.6 32


Original
PDF IRF120, IRF121, IRF122, IRF123 TA09594. IRF123 IRF120 irf122
IRF120

Abstract: LS 74145 IRF121 IRF122 IRF123 RF122 IRF 5070 IRF N-Channel Power MOSFETs 05071
Text: 0.400 7.OA MAXIMUM RATINGS ■Characteristic Symbol IRF120 IRF121 IRF122 IRF123 Unit Drain-Source , =125°C On-State Drain-Source Current (2) Idiot) IRF120 IRF121 8.0 - - A VDS>ltXon)XRoS(on) max , Vgs=10V IRF122 , -10V, ID-4.0A 1 IRF122 IRF123 - 0.30 0.40 a Forward Transconductance (2) gis ALL 1.5 3.1 — 0 VDS>lD , IRF122 IRF123 - - 7.0 A Modified MOSFET symbol showing the integral reverse P-N junction rectifier s Pulse Source Current (Body Diode) (3) Ism IRF120 IRF121 - - 32 A IRF122 IRF123 - - 28 A Diode


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PDF IRF120/121/122/123 IRF120 IRF121 RF122 IRF123 IRF120 IRF122 LS 74145 IRF 5070 IRF N-Channel Power MOSFETs 05071
Not Available

Abstract: No abstract text available
Text: IRF120, IRF121, IRF122 , IRF123 H R I A RS S E M I C O N D U C T O R 8.0A and 9.2A, 80V , IRF122 TO-204AA IRF122 IRF123 TO-2Q4AA IRF123 NOTE: When ordering, use the entire part , 1997 , File Number 1565.2 IRF120, IRF121, IRF122 , IRF123 Absolute Maximum Ratings Tc = 25°c, Unless Otherwise Specified IRF120 IRF121 IRF122 IRF123 UNITS Drain to Source , IRF120, IRF121 9.2 - - A IRF122 , IRF123 8.0 - - A VGS = ±20V - -


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PDF IRF120, IRF121, IRF122, IRF123 RF122,
irf530 equivalent

Abstract: 237 521 02 VN64GA VN0801D VN0401D IVN6200KNP IVN6200CNH IVN6200CNF IVN6200CNE IVN6100TNU
Text: 40 IRF122 90 4.0 1.9 25 2N6658 90 4.5 1.8 25 VN99AA «r 90 5.0 1.7 25 VN90AA 8CI 0.18 14.0 100 , – -IRFI21- ■IRF122 ■IRF123 IRF520 ■IRF521 » IRF522 ■IRF523 100V N-Channel Enhancement Mode , 0.30Q 8A IRF12Ì 60V TO-3 IRF122 100V 0.40D 7 A IRF123 60V IRFS20 100 V 0.30Q 8A IRF521 60V , IRF120,121,520,521. ±8A IRF122 ,123,522,523.  , > Resistance IRF120,121 IRF520, 521 0.25 0.30 n Vqs = 10V, lp = 4A (Note 1) IRF122 ,123 IRF522, 523 0.30


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PDF IVN6100TNU IVN6200CND O-220 VN0401D IVN6200CNE T0-220 IRF533 IVN6200CNF VN0801D irf530 equivalent 237 521 02 VN64GA IVN6200KNP IVN6200CNH
Not Available

Abstract: No abstract text available
Text: TO-3 package (Standard) PRODUCT SUMMARY Part Number IRF120 IRF121 ÌRF122 IRF123 Vds -100 V 60V , V gs Id Id Idm Igm Pd IRF120 100 100 IRF121 60 · 60 ±20 IRF122 100 100 IRF123 60 60 , 8.0 IRF121 IRF122 7.0 IRF123 IRF120 IRF121 IRF122 IRF123 gfs C is s Coss C rs s (T c= 2 5 °C , Current (Body Diode) Symbol Type IRF120 IRF121 IRF122 IRF123 IRF120 IRF121 IRF122 IRF123 IRF120 IRF121 IRF122 IRF123 ALL Min Typ Max Units 8.0 7.0 32 28 2.5 2.3 A A A A V V ns T c= 2 5 °C , ls = 8.0A , Tc = 2


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PDF IRF120 IRF121 RF122 IRF123
IRF520

Abstract: IRF120 10n10 circuit diagram irf520 mtp10n10 irf5205 MTP10N08 IRF123 IRF521 IRF522
Text: -220AB IRF120 IRF121 IRF122 IRF123 IRF520 IRF521 IRF522 IRF523 MTP10N08 MTP10N10 Part Number Voss RpS(on , 0.30 ft 8.0 A 5.0 A IRF122 100 V 0.40 ft 7.0 A 4.0 A IRF123 60 V 0.40 ft 7.0 A 4.0 A IRF520 100 V , MTP10N10 Rating MTP10N08 Rating IRF122 /123 IRF522/523 Unit Vdss Drain to Source Voltage1 100 80 60 V , (on) Static Drain-Source On-Resistance2 IRF120/121/520/521 MTP10N08/10N10 IRF122 /123/522/523 n VGS , Forward Voltage IRF120/121/520/521 IRF122 /123/522/523 2.5 V ls = 8.0 A; VGS = 0 V 2.3 V ls = 7.0 A


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PDF IRF120-123/IRF520-523 MTP10N08/10N10 O-220AB IRF120 IRF121 IRF122 IRF123 IRF520 IRF521 MTP10N08/10N10 IRF520 10n10 circuit diagram irf520 mtp10n10 irf5205 MTP10N08 IRF123 IRF521 IRF522
irf 150 equivalent

Abstract: 2sk135 equivalent hitachi 2sk135 irf150 HPWR-6502 2SK133 IRF331 PM100RLA060 IRF351 irf 111
Text: MOSPOWER Cross Reference List HEWLETT-PACKARD Industry BVDSS rDS(on) Package Siliconix BVDSS rDS(on) Part No. (Volts) (Ohms) Equivalent (Volts) (Ohms) H PWR-6501 450 0.85 TO-3 IRF441 450 0.85 HPWR-6502 400 0.74 TO-3 IRF340 400 0.55 HPWR-6503 450 1.0 TO-3 IRF441 450 0.85 HPWR-6504 400 1.0 TO-3 VN4001A 400 1.0 HITACHI 2SK132 100 1.71 TO-3 IRF122 100 0.4 2SK133 120 1.71 TO , 0.30 TO-3 IRF121 — — IRF122 100 0.40 TO-3 IRF122 — — IRF123 60 0.40 TO-3 IRF123 — â


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PDF PWR-6501 IRF441 HPWR-6502 IRF340 HPWR-6503 HPWR-6504 VN4001A 2SK132 IRF122 irf 150 equivalent 2sk135 equivalent hitachi 2sk135 irf150 2SK133 IRF331 PM100RLA060 IRF351 irf 111
irf120

Abstract: VN64GA oni 350 IRF152 IRF150 IRF142 IRF140 IRF132 IRF130 IRFS20
Text: 100 0.3 8.0 40 IRF120 100 0.4 7.0 40 IRF122 90 4.0 1.9 25 2N6658 90 4.5 1.8 25 VN99AA «r 90 , 1.4 20 VN2406D Siliconix 1-5 IRF120 ■-IRFI21- ■IRF122 ■IRF123 IRF520 ■IRF521 » IRF522 , Number BVDSS RDS IRF122 100V 0.40D 7 A , . ±8A IRF122 ,123,522,523. ±7A Operating and Storage Temperature , (Note 1) IRF122 ,123 IRF522, 523 0.30 0.40 Dynamic gfS Forward Transconductance All 1.5 2.5


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PDF IRF150 IRF152 IRF140 IRF142 VN1000A IRF130 VN1001A IRF132 IRF120 IRF122 irf120 VN64GA oni 350 IRF152 IRF150 IRF142 IRF140 IRF132 IRF130 IRFS20
IRFS20

Abstract: 1RF122 IRF643 IRF642 IRF641 IRF640 IRF633 IRF632 0-30Q IRF630
Text: 1.2 6.25 VN35AB 1-6 Siliconix IRF120 ■-IRFI21- ■IRF122 ■IRF123 IRF520 ■IRF521 » IRF522 , Number BVDSS RDS IRF122 100V 0.40D 7 A , . ±8A IRF122 ,123,522,523. ±7A Operating and Storage Temperature , (Note 1) IRF122 ,123 IRF522, 523 0.30 0.40 Dynamic gfS Forward Transconductance All 1.5 2.5


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PDF IRF640 IRF642 IRF630 IRF632 IRF620 IRF622 VN1706D IRF641 IRF643 IRF631 IRFS20 1RF122 IRF643 IRF642 IRF641 IRF640 IRF633 IRF632 0-30Q IRF630
2SK134 equivalent

Abstract: 2sk135 equivalent 2SJ48 equivalent IRF150 To3 package 2SJ50 equivalent HPWR 6501 HPWR-6503 2SJ49 2sk134 HPWR-6504 2SJ49 equivalent
Text: MOSPOWER Cross Reference List HEWLETT-PACKARD Industry BVDSS rDS(on) Package Siliconix BVDSS rDS(on) Part No. (Volts) (Ohms) Equivalent (Volts) (Ohms) H PWR-6501 450 0.85 TO-3 IRF441 450 0.85 HPWR-6502 400 0.74 TO-3 IRF340 400 0.55 HPWR-6503 450 1.0 TO-3 IRF441 450 0.85 HPWR-6504 400 1.0 TO-3 VN4001A 400 1.0 HITACHI 2SK132 100 1.71 TO-3 IRF122 100 0.4 2SK133 120 1.71 TO , 0.30 TO-3 IRF121 — — IRF122 100 0.40 TO-3 IRF122 — — IRF123 60 0.40 TO-3 IRF123 — â


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PDF PWR-6501 IRF441 HPWR-6502 IRF340 HPWR-6503 HPWR-6504 VN4001A 2SK132 IRF122 2SK134 equivalent 2sk135 equivalent 2SJ48 equivalent IRF150 To3 package 2SJ50 equivalent HPWR 6501 2SJ49 2sk134 2SJ49 equivalent
irf121

Abstract: IRF123 367AL irf120 312H IRF122 IW120
Text: Product Summary Pan Number BV0SS F»DS IRF122 100 V , , IRF121, IRF122 , IRF123 Devices Absolute Maximum Ratings r h IW120 «Mi? rfVt» IV'Ö UM Iq # Tq • n , €” * 5aa F^ i0 G-20 IRF120, IRF121, IRF122 , IRF123 Devices Source-Drain Diode Ratings and


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PDF IRF121 T0-204AA IRF120, IRF121, IRF122, IRF123 irf121 367AL irf120 312H IRF122 IW120
2SK176

Abstract: VN4001A IRF441 IRF340 IRF223 IRF122 HPWR-6504 HPWR-6503 HPWR-6502 2SK133
Text: MOSPOWER Cross Reference List HEWLETT-PACKARD Industry BVDSS rDS(on) Package Siliconix BVDSS rDS(on) Part No. (Volts) (Ohms) Equivalent (Volts) (Ohms) H PWR-6501 450 0.85 TO-3 IRF441 450 0.85 HPWR-6502 400 0.74 TO-3 IRF340 400 0.55 HPWR-6503 450 1.0 TO-3 IRF441 450 0.85 HPWR-6504 400 1.0 TO-3 VN4001A 400 1.0 HITACHI 2SK132 100 1.71 TO-3 IRF122 100 0.4 2SK133 120 1.71 TO , 0.30 TO-3 IRF121 — — IRF122 100 0.40 TO-3 IRF122 — — IRF123 60 0.40 TO-3 IRF123 — â


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PDF PWR-6501 IRF441 HPWR-6502 IRF340 HPWR-6503 HPWR-6504 VN4001A 2SK132 IRF122 2SK176 IRF223 2SK133
Not Available

Abstract: No abstract text available
Text: ) IRF120, IRF121 IRF122. IRF1 23 Forward Transconductance (Note 2) Input Capacitance Output Capacitance , PERATION IN THIS AREA LIMITED* IRF120. 1 : =s a c IRF122. 3 IRF120. 1 9 * a \ X I \ \ >k 100)13 , 3 1 HARRIS A ugust 1991 Features · 8.0A and 9.2A , 8 0 V - 100V IRF120, IRF121 IRF122 , IRF 123 N-Channel Enhancem ent-M ode Power Field-Effect Transistors Package T 0 -2 0 4 A A BOTTOM VIEW , ifie d IRF120 IRF121 80 80 9.2 6.5 37 ±20 60 0.4 32 -5 5 t o + 175 300 IRF122 100 100 8.0 5.6 32 ±20 60


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PDF IRF120, IRF121 IRF122,
VN0108N2

Abstract: IRF842 IRF822 IRF640 IRF632 IRF540 IRF522 IRF422 IRF240 2SJ54
Text: IRF120 ■-IRFI21- ■IRF122 ■IRF123 IRF520 ■IRF521 » IRF522 ■IRF523 100V N-Channel , 0.30Q 8A IRF12Ì 60V TO-3 IRF122 100V 0.40D 7 A IRF123 60V IRFS20 100 V 0.30Q 8A IRF521 60V , IRF120,121,520,521. ±8A IRF122 ,123,522,523.  , > Resistance IRF120,121 IRF520, 521 0.25 0.30 n Vqs = 10V, lp = 4A (Note 1) IRF122 ,123 IRF522, 523 0.30


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PDF O-220 VN1000D IRF522 VN1000A IRF540 IRF632 IRF640 VN0108N2 IRF842 IRF822 IRF422 IRF240 2SJ54
2sk135 equivalent

Abstract: 2SK134 equivalent HPWR-6502 irf150 IRF441 IRF340 irf840 equivalent IRF122 HPWR-6504 HPWR-6503
Text: MOSPOWER Cross Reference List HEWLETT-PACKARD Industry BVDSS rDS(on) Package Siliconix BVDSS rDS(on) Part No. (Volts) (Ohms) Equivalent (Volts) (Ohms) H PWR-6501 450 0.85 TO-3 IRF441 450 0.85 HPWR-6502 400 0.74 TO-3 IRF340 400 0.55 HPWR-6503 450 1.0 TO-3 IRF441 450 0.85 HPWR-6504 400 1.0 TO-3 VN4001A 400 1.0 HITACHI 2SK132 100 1.71 TO-3 IRF122 100 0.4 2SK133 120 1.71 TO , 0.30 TO-3 IRF121 — — IRF122 100 0.40 TO-3 IRF122 — — IRF123 60 0.40 TO-3 IRF123 — â


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PDF PWR-6501 IRF441 HPWR-6502 IRF340 HPWR-6503 HPWR-6504 VN4001A 2SK132 IRF122 2sk135 equivalent 2SK134 equivalent irf150 irf840 equivalent
irf740 equivalent

Abstract: IRF450 equivalent irf340 "cross reference" 2SK259 irf150 HPWR-6502 2SK133 tl 741 IRF351 IRF240
Text: MOSPOWER Cross Reference List HEWLETT-PACKARD Industry BVDSS rDS(on) Package Siliconix BVDSS rDS(on) Part No. (Volts) (Ohms) Equivalent (Volts) (Ohms) H PWR-6501 450 0.85 TO-3 IRF441 450 0.85 HPWR-6502 400 0.74 TO-3 IRF340 400 0.55 HPWR-6503 450 1.0 TO-3 IRF441 450 0.85 HPWR-6504 400 1.0 TO-3 VN4001A 400 1.0 HITACHI 2SK132 100 1.71 TO-3 IRF122 100 0.4 2SK133 120 1.71 TO , 0.30 TO-3 IRF121 — — IRF122 100 0.40 TO-3 IRF122 — — IRF123 60 0.40 TO-3 IRF123 — â


OCR Scan
PDF PWR-6501 IRF441 HPWR-6502 IRF340 HPWR-6503 HPWR-6504 VN4001A 2SK132 IRF122 irf740 equivalent IRF450 equivalent irf340 "cross reference" 2SK259 irf150 2SK133 tl 741 IRF351 IRF240
IRF510

Abstract: irf540
Text: IRFD120 IRFF112 IRFF110 IRF512 IRF510 IRFF122 IRFF120 IRFF132 IRF122 IRFF130 IRF120 IRF132 IRF130 IRF142


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PDF 4-PIn80 IRFD113 IRFD111 IRFD123 IRFD121 IRFF113 IRFF111 IRF513 IRF511 IRFF123 IRF510 irf540
Not Available

Abstract: No abstract text available
Text: IRF122 Transistors N-Channel Enhancement MOSFET Military/High-RelN V(BR)DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)7.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)40 Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case Thermal Resistance Junc-Amb. V(GS)th Max. (V) V(GS)th (V) (Min) @(VDS) (V) (Test Condition) @I(D) (A) (Test Condition) I(DSS) Max. (A) @V(DS) (V) (Test Condition) @Temp (øC


Original
PDF IRF122
IRF024

Abstract: 2N6845 IRF035 33MIL
Text: IRF024 IRF035 IRF034 IRF045 IRF044 IRF054 IRF123 IRF121 IRF133 IRF131 IRF143 IRF153 IRF141 IRF151 IRF122


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PDF IRFF9010 IRFF9020 IRFF9030 IRFF9113 IRFF9111 IRFF9123 IRFF9121 IRFF9133 IRFF9131 IRFF9112 IRF024 2N6845 IRF035 33MIL
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