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Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT1160IS#TR Linear Technology IC 1.5 A HALF BRDG BASED MOSFET DRIVER, PDSO14, 0.150 INCH, PLASTIC, SO-14, MOSFET Driver
LT1158IS Linear Technology IC 15 A HALF BRDG BASED MOSFET DRIVER, PDSO16, PLASTIC, SOL-16, MOSFET Driver
LT1160IN Linear Technology IC 1.5 A HALF BRDG BASED MOSFET DRIVER, PDIP14, 0.300 INCH, PLASTIC, DIP-14, MOSFET Driver
LT1158CS#TR Linear Technology IC 15 A HALF BRDG BASED MOSFET DRIVER, PDSO16, SOIC-16, MOSFET Driver
LTC1177CSW Linear Technology IC BUF OR INV BASED MOSFET DRIVER, PDSO18, 0.300 INCH, PLASTIC, SO-18, MOSFET Driver
LTC4444-5IMS8E#PBF Linear Technology IC 1.75 A HALF BRDG BASED MOSFET DRIVER, PDSO8, LEAD FREE, PLASTIC, MSOP-8, MOSFET Driver

IRF p 536 MOSFET Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2000 - BUZ MOSFET

Abstract:
Text: [ /PageMode /UseOutlines /DOCVIEW pdfmark Ordering Nomenclature Guide POWER MOSFET PRODUCTS BUZ , of Intersil Corporation IRF TYPES IR XX XXX EQUIVALENT IR PART PACKAGE DESIGNATION: FA , XX X XX XXX DEVICE TYPE RF: Standard MOSFET RL: Current Limited MOSFET PACKAGE , : TO-205AF M: TO-204AA P : TO-220AB V: 5 Lead TO-247 1K: MS-012AA 1S: TO-263 (D2-PAK) 3S 5 Lead TO , 50V, 10 = 100V, 20 = 200V, etc. POLARITY N: N-Channel P : P-Channel CURRENT RATING 1 = 1A, 10 =


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PDF O-263, O-252, OT-223 O-252 O-220 TS-001 O-220) O-247 BUZ MOSFET power MOSFET IRF data P-CHANNEL 25A TO-247 POWER MOSFET rfd15n05 mosfet p-channel 10A irf TO-205A IRF MOSFET driver TS-001-5 irf n-channel TO-252 MOSFET
IRF Power MOSFET code marking

Abstract:
Text: IRF U120 12 AS S EMBLY LOT CODE 34 DAT E CODE P = DES IGNAT ES LEAD-F REE PRODUCT (OPT , PD - 95394A DIGITAL AUDIO MOSFET IRLR4343PbF IRLU4343PbF IRLU4343-701PbF Features , designed for Class-D audio amplifier applications. This MosFET utilizes the latest processing techniques , such as efficiency, THD and EMI. Additional features of this MosFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MosFET a highly


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PDF 5394A IRLR4343PbF IRLU4343PbF IRLU4343-701PbF IRLR4343 IRLU4343 IRLU4343-701 IRLR/U4343PbF O-252AA) IRF Power MOSFET code marking audio power amplifier mosfet max5542 IRLU4343-701 IRLU4343 IRLR4343 U120 IRF 740 N EIA-541 digital audio mosfet
IRF MOSFET 100A 200v

Abstract:
Text: IRF W/I740A Fig 7. Breakdown Voltage vs. Temperature N -CHANN EL POWER MOSFET Fig 8 , A d van ced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology , -5 5 Q In = 10 A D 2- P A K P - P A K I.G a te 2. Drain 3. Source Absolute Maximum Ratings , FAIRCHILD SEMICONDUCTORTM © 1 9 9 9 F a irc h ild S e m ic o n d u c to r C o rp o ra tio n IRF W , N -CHANN EL POWER MOSFET Min. Typ. Max. Units 400 - Test Condition VG s=0V,lD=250|iA Id


OCR Scan
PDF IRFW/I740A IRF MOSFET 100A 200v MOSFET 150 N IRF
irf 249 A

Abstract:
Text: Diode Recovery dv/dt Test Circuit & Waveforms N-CHANNEL POWER MOSFET VG S D = G ate P u lse , Advanced Power MOSFET FEATURES IRFW/I720A B^DSS - 400 V 1 .8 Q Avalanche Rugged , tio n IRF W/I720A Electrical Characteristics (Tc=25°c unless otherwise specified) Symbol BVoss , Current - N-CHANNEL POWER MOSFET Min. Typ. Max. Units 400 - Test Condition VG s=0V,lD=250|iA , . Max. Units - Test Condition Integral reverse pn-diode in the MOSFET 3.3 13 1.5 - A V ns nc


OCR Scan
PDF IRFW/I720A irf 249 A
2004 - MOSFET IRF 940

Abstract:
Text: IER LOGO PART NUMBER IRF U120 919A 56 78 AS SEMBLY LOT CODE Note: " P " in ass embly line , IFIER LOGO PART NUMBER IRF U120 56 AS SEMBLY LOT CODE 10 78 DAT E CODE P = DES IGNAT , Rectification for Telecom and Industrial Use l Lead-Free HEXFET® Power MOSFET VDSS 30V Benefits l , Time 2 Ã MOSFET symbol A showing the integral reverse e e Intrinsic turn-on time , P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001


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PDF 5440A IRLR7843PbF IRLU7843PbF IRLR7843 IRLU7843 AN-994. MOSFET IRF 940 MOSFET IRF IRLU7843 EIA-541 IRFU120 IRLR7843 R120 U120
2004 - DIODE 83A

Abstract:
Text: NUMBER IRF U120 56 AS S EMB LY LOT CODE www.irf.com 78 DAT E CODE P = DES IGNAT ES , PD - 95549A IRFR13N15DPbF IRFU13N15DPbF SMPS MOSFET HEXFET® Power MOSFET Applications , Conditions D MOSFET symbol 14 ­­­ ­­­ showing the A G integral reverse ­­­ ­­­ 56 S p-n junction , = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 , millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMPLE: T HIS IS AN IRF R120 WITH AS


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PDF 5549A IRFR13N15DPbF IRFU13N15DPbF AN1001) IRFR13N15D IRFU13N15D AN-994. DIODE 83A AN1001 EIA-541 IRFR13N15D IRFU120 IRFU13N15D MOSFET IRF 94 R120 U120
IRF 344

Abstract:
Text: A d van ced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology , FAIRCHILD SEMICONDUCTORTM © 1 9 9 9 F a irc h ild S e m ic o n d u c to r C o rp o ra tio n IRF W/I710 , N -CHANN EL POWER MOSFET Min. Typ. Max. Units 400 - Test Condition VG s=0V,lD=250|iA Id , Condition Integral reverse pn-diode in the MOSFET 2 6 A V ns nc - - - - 1.5 - T.I , SEMICONDUCTORTM N -CHANN EL POWER MOSFET IRFW/I710A Fig 2. Transfer Characteristics Fig 1. Output


OCR Scan
PDF IRFW/I710A IRF 344 IRF n 30v
irf9220

Abstract:
Text: DE | T T b m M E 5414 0 | - 2 0 0 Volt, 1.5 Ohm SFET IRF /IRFP9220, IRF9620 - 2 0 0 V ÌRF /IRFP9221, IRF9621 -1 5 0 V IRF /IRFP9222, IRF9622 - 2 0 0 V IRF /IRFP9223, IRF9623 - 1 50V 7 9 6 4 142 , RATINGS IRF /IRFP Characteristic Drain-Source Voltage (1) Drain-Gate Voltage (Rgs= 1 .0M 0 ) (1 , , Zo = 500, ( MOSFET switching times are essentially independent of operating temperature.) Ogd , SAMSUNG SEMICONDUCTOR 414 m M m F P 9 2 2 Q I9 ^ l9 2 2 2 l9 2 ^ ^ M M s m S m L ff-C H A N N E L ^


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PDF IRF9220/9221/9222/9223 IRFP9220/9221/9222/9223 1RF9620/9621/9622/9623 IRF/IRFP9220, IRF9620 RF/IRFP9221, IRF9621 IRF/IRFP9222, IRF9622 IRF/IRFP9223, irf9220 IRF 9220 IRFP9220 IRFP9222 specification of mosfet irf 9223 IRF9221 IRFP9223
2005 - irf 418

Abstract:
Text: Frequency Circuits G HEXFET® Power MOSFET D Benefits l Improved Gate, Avalanche and Dynamic dV/dt , ­­­ 62 40 Units °C/W www.irf.com 1 06/30/05 IRF /B/S/SL4310PbF Static @ TJ = 25 , A Conditions MOSFET symbol showing the integral reverse G S D p-n junction diode. TJ = 25 , . 2 www.irf.com IRF /B/S/SL4310PbF 1000 TOP 1000 VGS 15V 10V 8.0V 6.0V 5.5V 5.0V 4.8V 4.5V , . Gate-to-Source Voltage www.irf.com 3 IRF /B/S/SL4310PbF 1000.0 10000 ID, Drain-to-Source Current (A


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PDF 14275C IRFB4310PbF IRFS4310PbF IRFSL4310PbF O-220AB IRFB4310PbF IRFS4310PbF O-262 EIA-418. irf 418 irf 48v mosfet irf 540 mosfet
IRF Power MOSFET code marking

Abstract:
Text: NUMB ER IRF U120 56 AS SEMBLY LOT CODE 78 DAT E CODE P = DES IGNAT ES LEAD-FREE PRODUCT , Rated Lead-Free HEXFET® Power MOSFET D VDSS = -55V RDS(on) = 0.065 G ID = -31A S , 71 170 -1.3 110 250 A V ns nC Conditions D MOSFET symbol showing the G integral , -251AA) Part Marking Information EXAMPLE : T HIS IS AN IRF U120 WIT H ASS EMB LY LOT CODE 5678 AS SE MBLED ON WW 19, 1999 IN T HE ASS EMBLY LINE "A" INT ERNATIONAL RE CT IFIE R LOGO PART NUMBER IRF


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PDF PD-95025A IRFR5305PbF IRFU5305PbF IRFR5305) IRFU5305) AN-994. IRFR/U5305PbF O-251AA) IRF Power MOSFET code marking IRFR5305 IRF 100A IRFR5305PBF IRFU5305
2005 - IRF GATE LOGIC

Abstract:
Text: Frequency Circuits G HEXFET® Power MOSFET D Benefits l Improved Gate, Avalanche and Dynamic dV/dt , ­­­ 62 40 Units °C/W www.irf.com 1 06/28/05 IRF /B/S/SL3207PbF Static @ TJ = 25 , ­­­ ­­­ 180c ­­­ 720 A Conditions MOSFET symbol showing the integral reverse G S D ­­­ ­­­ 1.3 , . 2 www.irf.com IRF /B/S/SL3207PbF 1000 TOP VGS 15V 10V 8.0V 6.0V 5.5V 5.0V 4.8V 4.5V 1000 , . Gate-to-Source Voltage www.irf.com 3 IRF /B/S/SL3207PbF 1000.0 10000 ID, Drain-to-Source Current (A


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PDF 95708B IRFB3207PbF IRFS3207PbF IRFSL3207PbF O-220AB IRFB3207PbF IRFS3207PbF O-262 EIA-418. IRF GATE LOGIC
Not Available

Abstract:
Text: PD - 95773B IRLR024ZPbF IRLU024ZPbF HEXFET® Power MOSFET Features n n n n n n n , ID = 16A S Description This HEXFET® Power MOSFET utilizes the latest processing techniques , Time 2 MOSFET symbol A D G S e TJ = 25°C, IF = 9.6A, VDD = 28V di/dt = 100A/µs , Ci= τi/Ri Ci i/Ri Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 , , 2001 IN T HE ASS EMBLY LINE "A" PART NUMBER INT ERNAT IONAL RECT IFIER LOGO Note: " P " in


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PDF 95773B IRLR024ZPbF IRLU024ZPbF AN-994.
Not Available

Abstract:
Text: PD - 95090B IRLR3915PbF IRLU3915PbF HEXFET® Power MOSFET Features l l l l l l , ID = 30A S This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve , Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol ––– ––– 61 , Temperature (Z thJC ) 10 1 Thermal Response D = 0.50 0.20 0.10 0.1 P DM 0.05 t1 , 0.00001 0.0001 0.001 0.01 t1 / t 2 J = P DM x Z thJC +TC 0.1 1 t1, Rectangular


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PDF 95090B IRLR3915PbF IRLU3915PbF AN-994.
2004 - IRF 870

Abstract:
Text: IRF U120 56 ASS EMB LY LOT CODE 78 DAT E CODE P = DESIGNAT ES LEAD-FREE PRODUCT (OPT , PD - 95375A IRFR/U9214PbF HEXFET® Power MOSFET P-Channel Surface Mount (IRFR9214) l , Min. Typ. Max. Units Conditions D MOSFET symbol -2.7 showing the A G integral reverse , ) t1 t2 0.01 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC , shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMPLE: T HIS IS AN IRF


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PDF 5375A IRFR/U9214PbF IRFR9214) IRFU9214) -250V O-252AA) EIA-481 EIA-541. EIA-481. IRF 870 mosfet IRF 870 IRFR9214 IRFU9214
2010 - U120

Abstract:
Text: LOGO PART NUMBER IRF U120 119A 56 78 ASSE MBLY LOT CODE Note: " P " in as s embly line pos , IFIER LOGO PART NUMBER IRF U120 56 ASS EMBLY LOT CODE 78 DAT E CODE P = DESIGNAT ES LE , PD - 95773B IRLR024ZPbF IRLU024ZPbF HEXFET® Power MOSFET Features n n n n n n n , = 16A S Description This HEXFET® Power MOSFET utilizes the latest processing techniques to , MOSFET symbol A D G TJ = 25°C, IF = 9.6A, VDD = 28V di/dt = 100A/µs S e e


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PDF 95773B IRLR024ZPbF IRLU024ZPbF AN-994. U120 AN-1005
2007 - IRF Power MOSFET code marking

Abstract:
Text: E MB L Y L INE "A" INT E R NAT IONAL R E CT IF IE R L OGO P AR T NU MB E R IRF U 120 11 9A , P AR T NU MB E R IRF U 120 56 AS S E MB L Y L OT CODE www.irf.com 78 DAT E CODE P = , SMPS MOSFET Applications Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l , MOSFET VDSS RDS(on) max ID 1.7 5.0A 500V Benefits Low Gate Charge Qg results in , Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol ­­­ ­­­ 5.0 showing the A


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PDF -95076B IRFR430APbF IRFU430APbF IRFR430A IRFU430A EIA-481 EIA-541. EIA-481. IRF Power MOSFET code marking IRF 50A 4.5v to 100v input regulator EIA-541 IRF 250V 100A IRFR430A IRFU430A R120
2007 - IRF Power MOSFET code marking

Abstract:
Text: E MB L Y L INE "A" INT E R NAT IONAL R E CT IF IE R L OGO P AR T NU MB E R IRF U 120 11 9A , P AR T NU MB E R IRF U 120 56 AS S E MB L Y L OT CODE www.irf.com 78 DAT E CODE P = , PD - 94356B IRFR430A IRFU430A SMPS MOSFET Applications Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High speed power switching l HEXFET® Power MOSFET VDSS RDS(on) max ID , . Units Conditions D MOSFET symbol ­­­ ­­­ 5.0 showing the A G integral reverse ­­­ ­­­ 20 S


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PDF 94356B IRFR430A IRFU430A EIA-481 EIA-541. EIA-481. IRF Power MOSFET code marking R120 IRFR430A IRF MOSFET 10A P IRF GATE LOGIC IRF 50A IRF 250V 100A EIA-541 94356B 94356
2007 - IRF 450 MOSFET

Abstract:
Text: PD - 97278 IRFB4410ZPbF IRFS4410ZPbF IRFSL4410ZPbF HEXFET® Power MOSFET Applications l High , ­­­ 62 40 Units °C/W 1 03/06/07 IRF /B/S/SL4410ZPbF Static @ TJ = 25°C (unless otherwise , Min. Typ. Max. Units ­­­ ­­­ ­­­ ­­­ Conditions 97c A MOSFET symbol 390 A , refer to application note #AN-994. R is measured at TJ approximately 90°C. www.irf.com IRF /B , . Gate-to-Source Voltage 3 IRF /B/S/SL4410ZPbF 1000 100 ID, Drain-to-Source Current (A) ISD


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PDF IRFB4410ZPbF IRFS4410ZPbF IRFSL4410ZPbF O-220AB O-262 EIA-418. IRF 450 MOSFET AN-994 IRFB4410Z IRFB4410ZPBF irfs4410z marking 58A
2006 - irf 540 mosfet

Abstract:
Text: Frequency Circuits HEXFET® Power MOSFET D G Benefits l Improved Gate, Avalanche and Dynamic dV/dt , Junction-to-Ambient (PCB Mount) , D Pak jk Units °C/W 1 01/31/06 IRF /B/S/SL4310PbF Static @ TJ = 25 , ­­­ ­­­ 130 ­­­ 550 A Conditions MOSFET symbol D showing the integral reverse , #AN-994. R is measured at TJ approximately 90°C. www.irf.com IRF /B/S/SL4310PbF 1000 1000 , Voltage 3 IRF /B/S/SL4310PbF 10000 ID, Drain-to-Source Current (A) ISD , Reverse Drain


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PDF 14275D IRFB4310PbF IRFS4310PbF IRFSL4310PbF O-220AB O-262 EIA-418. irf 540 mosfet MOSFET IRF 540 AN-994 IRFS4310PBF
2006 - AN-994

Abstract:
Text: Frequency Circuits HEXFET® Power MOSFET D G Benefits l Improved Gate, Avalanche and Dynamic dV/dt , www.irf.com k jk °C/W 1 03/06/06 IRF /B/S/SL3207PbF Static @ TJ = 25°C (unless otherwise , 400µs; duty cycle 2%. 2 720 A Conditions MOSFET symbol showing the integral reverse , #AN-994. R is measured at TJ approximately 90°C. www.irf.com IRF /B/S/SL3207PbF 1000 1000 , Voltage 3 IRF /B/S/SL3207PbF 10000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current


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PDF 95708D IRFB3207PbF IRFS3207PbF IRFSL3207PbF O-220AB O-262 EIA-418. AN-994 irfb3207pbf
2006 - Not Available

Abstract:
Text: Frequency Circuits HEXFET® Power MOSFET D G Benefits l Improved Gate, Avalanche and Dynamic dV , IRF /B/S/SL3207PbF Static @ TJ = 25°C (unless otherwise specified) Symbol V(BR)DSS ∆V(BR)DSS , €“ 170 ––– ™ 720 A Conditions MOSFET symbol showing the integral reverse D G , approximately 90°C. www.irf.com IRF /B/S/SL3207PbF 1000 1000 VGS 15V 10V 8.0V 6.0V 5.5V 5.0V , Total Gate Charge (nC) Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 3 IRF /B/S


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PDF 95708C IRFB3207PbF IRFS3207PbF IRFSL3207PbF O-220AB O-262 EIA-418.
2006 - MOSFET IRF 380

Abstract:
Text: Frequency Circuits l Lead-Free HEXFET® Power MOSFET D G S Benefits l Improved Gate, Avalanche , www.irf.com j ij Units °C/W 1 01/23/06 IRF /B/S/SL4610PbF Static @ TJ = 25°C (unless , ; duty cycle 2%. 2 A Conditions MOSFET symbol showing the integral reverse D G p-n , at TJ approximately 90°C www.irf.com IRF /B/S/SL4610PbF 1000 1000 VGS 15V 10V 8.0V , Voltage 3 IRF /B/S/SL4610PbF 1000 100.0 ID, Drain-to-Source Current (A) ISD, Reverse Drain


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PDF 95936B IRFB4610PbF IRFS4610PbF IRFSL4610PbF O-262 O-220AB EIA-418. MOSFET IRF 380 AN-994
IRFR48Z

Abstract:
Text: PD - 95950 AUTOMOTIVE MOSFET Features l l l l l l Advanced Process Technology Ultra , Tjmax Lead-Free Description IRFR48ZPbF IRFU48ZPbF HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 11m G Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes , Drain Current A 42 250 P D @T C = 25°C Power Dissipation V GS Units 62 91 , Forward Turn-On Time 2 Ã MOSFET symbol A showing the integral reverse e e Intrinsic


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PDF IRFR48ZPbF IRFU48ZPbF IRFR/U48ZPbF O-251AA) IRFR48Z IRFU48Z U120
2006 - irf 48v mosfet

Abstract:
Text: Frequency Circuits HEXFET® Power MOSFET D VDSS RDS(on) typ. max. ID G Benefits l Worldwide , www.irf.com k 2 Junction-to-Ambient (PCB Mount) , D Pak jk °C/W 1 03/06/06 IRF /B/S , Forward Turn-On Time ­­­ Ãdi ­­­ ­­­ 720 A Conditions MOSFET symbol D , 90°C www.irf.com IRF /B/S/SL3207 1000 1000 VGS 15V 10V 8.0V 6.0V 5.5V 5.0V 4.8V , Total Gate Charge (nC) Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 3 IRF /B/S/SL3207


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PDF 96893C IRFB3207 IRFS3207 IRFSL3207 O-220 O-220AB O-262 irf 48v mosfet AN-994 IRFB3207 IRFS3207 IRFSL3207
2010 - irf 540 mosfet

Abstract:
Text: Note: " P " in assembly line position indicates "Lead-Free" IRF R120 116A 12 34 ASS EMBLY , PD - 95090B IRLR3915PbF IRLU3915PbF HEXFET® Power MOSFET Features l l l l l l , ID = 30A S This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve , Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol ­­­ ­­­ 61 showing the A G , D = 0.50 0.20 0.10 0.1 P DM 0.05 0.02 0.01 t1 SINGLE PULSE (THERMAL RESPONSE


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PDF 95090B IRLR3915PbF IRLU3915PbF IRLR3915S AN-994. irf 540 mosfet
Supplyframe Tracking Pixel