The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
FLTR100V20Z GE Critical Power FLTR100V20 Filter Module, 75 Vdc Input Maximum, 20 A Maximum
FLTR100V10Z GE Critical Power FLTR100V10 Filter Module, 75 Vdc Input Maximum, 10 A Maximum
CSD19534Q5AT Texas Instruments 100V, N-Channel NexFET Power MOSFET 8-VSONP -55 to 150
CSD19538Q3A Texas Instruments 100V N-Channel NexFET Power MOSFET 8-VSONP -55 to 150
CSD19534Q5A Texas Instruments 100V, N-Channel NexFET Power MOSFET 8-VSONP -55 to 150
CSD19538Q3AT Texas Instruments 100V N-Channel NexFET Power MOSFET 8-VSONP -55 to 150

IRF P CHANNEL MOSFET 100v Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1996 - IRF P CHANNEL MOSFET 200V 20A

Abstract: P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252
Text: 100V 80V 60V 0.200 30V 0.100 rDS(ON) BVDSS R and IRF Series Power MOSFET TO , P P CHANNEL · BVDSS up to 1000V · All IRF types are avalanche capable · Size 1 , POLARITY N: N-Channel P : P-Channel VOLTAGE RATING 05 = 50V, 10 = 100V , 20 = 200V, etc. FEATURE , ) POLARITY N: N-Channel P : P-Channel VOLTAGE RATING 05 = 50V, 10 = 100V , 20 = 200V, etc. FEATURE , N P P N N N CHANNEL N N CHANNEL N N N N N N CHANNEL


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PDF RF1S9630SM RF1S4N100SM RF1S630SM RF1S70N06SM RF1S70N03SM O-263AB) LC96586 IRF P CHANNEL MOSFET 200V 20A P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252
2002 - 500W TRANSISTOR AUDIO AMPLIFIER

Abstract: IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET list of n channel power mosfet P channel 600v 20a IGBT
Text: OptoCouplers/Optically Isolated Error Amps 5.2A­22A/ 100V N-Channel PowerTrench MOSFET 12A­46A/10V­30V , 6.3A­7.5A/ 100V N-Channel PowerTrench MOSFET 16A/30V N-Channel PowerTrench MOSFETs 100%­400% Current Amplification FDS3670 FDD6676S FOD2712 6.3A­7.5A/ 100V N-Channel PowerTrench MOSFET 16A/30V , FDS6688 H11A817C H11A817C FDS6688 6.3A­7.5A/ 100V N-Channel PowerTrench MOSFET 16A/30V , Transceiver USB1T11A S-Correction IRF /IRFS630B 9A/200V N-Channel Power MOSFET IRF /IRFS6408 18A


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PDF Power247TM, 500W TRANSISTOR AUDIO AMPLIFIER IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET list of n channel power mosfet P channel 600v 20a IGBT
2005 - z44n

Abstract: mosfet z44n specification of mosfet irf IRF MOSFET driver IRF Power MOSFET code marking IRF n CHANNEL MOSFET 1N4148 marking SOT89 MARKING CODE CL sot89 Marking mosfet RL Z44N
Text: Output voltage for driving N channel MOSFET Ground SOT89-5L ( Top View ) VOUT 1 VCC 2 Ordering , AP436 Synchronous Rectifier MOSFET Driver Features General Descriptions - VOUT slew-rate minimum 100V /uS @ CL=3000pF - IOUT(sink & source)=1.2 / 0.9 A - Safety considered. - Reduce power , high-speed controller designed to drive N-channel power MOSFET used as synchronous rectifiers in high , anticipating transformer output transitions then turns the power MOSFET on or off before the transitions of


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PDF AP436 00V/uS 3000pF OT89-5L, AP436 z44n mosfet z44n specification of mosfet irf IRF MOSFET driver IRF Power MOSFET code marking IRF n CHANNEL MOSFET 1N4148 marking SOT89 MARKING CODE CL sot89 Marking mosfet RL Z44N
2005 - irf 418

Abstract: irf 48v mosfet irf 540 mosfet IRFS4310PBF
Text: Frequency Circuits G HEXFET® Power MOSFET D Benefits l Improved Gate, Avalanche and Dynamic dV/dt , Capability l Lead-Free S VDSS RDS(on) typ. max. ID 100V 5.6m: 7.0m: 140A G DS TO , ­­­ 62 40 Units °C/W www.irf.com 1 06/30/05 IRF /B/S/SL4310PbF Static @ TJ = 25 , V/°C Reference to 25°C, ID = 1mAd m VGS = 10V, ID = 75A g V µA VDS = VGS, ID = 250µA VDS = 100V , VGS = 0V VDS = 100V , VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V f = 1MHz, open drain Dynamic @ TJ = 25


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PDF 14275C IRFB4310PbF IRFS4310PbF IRFSL4310PbF O-220AB IRFB4310PbF IRFS4310PbF O-262 EIA-418. irf 418 irf 48v mosfet irf 540 mosfet
2000 - BUZ MOSFET

Abstract: power MOSFET IRF data P-CHANNEL 25A TO-247 POWER MOSFET rfd15n05 TO-205A mosfet p-channel 10A irf IRF MOSFET driver TS-001-5 RFD15N05SM TO-252 MOSFET
Text: 50V, 10 = 100V , 20 = 200V, etc. POLARITY N: N-Channel P : P-Channel CURRENT RATING 1 = 1A, 10 = , [ /PageMode /UseOutlines /DOCVIEW pdfmark Ordering Nomenclature Guide POWER MOSFET PRODUCTS BUZ , of Intersil Corporation IRF TYPES IR XX XXX EQUIVALENT IR PART PACKAGE DESIGNATION: FA , XX X XX XXX DEVICE TYPE RF: Standard MOSFET RL: Current Limited MOSFET PACKAGE , : TO-205AF M: TO-204AA P : TO-220AB V: 5 Lead TO-247 1K: MS-012AA 1S: TO-263 (D2-PAK) 3S 5 Lead TO


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PDF O-263, O-252, OT-223 O-252 O-220 TS-001 O-220) O-247 BUZ MOSFET power MOSFET IRF data P-CHANNEL 25A TO-247 POWER MOSFET rfd15n05 TO-205A mosfet p-channel 10A irf IRF MOSFET driver TS-001-5 RFD15N05SM TO-252 MOSFET
9n90c

Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60 MOSFET SMPS 2N60C str TV SMPS
Text: Device ( M/ P , MP-3, DSC, LCD TV ) Load Switch Schematic · The RDS(ON) of the P Channel MOS-FET is , / P M/ P `07. 08 99 High Voltage MOS-FET First & Best First & Best 600V ~ 700V Line-up , - M/ P 600 650 700 KEC-H Corp. 10 10 High Voltage MOS-FET First & Best First & , Signal BVDSS KMA2D8P20X P-CH MOS-FET Type Dual P -20V 5.8A FLP-8 M/ P TSOP , Power MOS-FET Selection Guide MOS-FET 2007. First Version 2007. First Version Http


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PDF 2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60 MOSFET SMPS 2N60C str TV SMPS
2006 - MOSFET IRF 540

Abstract: irf 540 mosfet AN-994 IRFS4310PBF
Text: Frequency Circuits HEXFET® Power MOSFET D G Benefits l Improved Gate, Avalanche and Dynamic dV/dt , IRFS4310PbF TO-220AB IRFB4310PbF 100V 5.6m: 7.0m: 130A TO-262 IRFSL4310PbF Absolute Maximum , Junction-to-Ambient (PCB Mount) , D Pak jk Units °C/W 1 01/31/06 IRF /B/S/SL4310PbF Static @ TJ = 25 , , ID = 250µA µA VDS = 100V , VGS = 0V VDS = 100V , VGS = 0V, TJ = 125°C nA VGS = 20V VGS = -20V f = , ­­­ ­­­ 130 ­­­ 550 A Conditions MOSFET symbol D showing the integral reverse


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PDF 14275D IRFB4310PbF IRFS4310PbF IRFSL4310PbF O-220AB O-262 EIA-418. MOSFET IRF 540 irf 540 mosfet AN-994 IRFS4310PBF
2006 - MOSFET IRF 380

Abstract: AN-994
Text: Frequency Circuits l Lead-Free HEXFET® Power MOSFET D G S Benefits l Improved Gate, Avalanche , diode dV/dt and dI/dt Capability VDSS RDS(on) typ. max. ID 100V 11m: 14m: 73A S GD S , www.irf.com j ij Units °C/W 1 01/23/06 IRF /B/S/SL4610PbF Static @ TJ = 25°C (unless , µA VDS = 100V , VGS = 0V VDS = 100V , VGS = 0V, TJ = 125°C nA VGS = 20V VGS = -20V f = 1MHz, open , ; duty cycle 2%. 2 A Conditions MOSFET symbol showing the integral reverse D G p-n


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PDF 95936B IRFB4610PbF IRFS4610PbF IRFSL4610PbF O-262 O-220AB EIA-418. MOSFET IRF 380 AN-994
2006 - IRFS4310

Abstract: AN-994 SL4310 irf 540 mosfet IRFS4310PBF
Text: Frequency Circuits HEXFET® Power MOSFET D G Benefits l Improved Gate, Avalanche and Dynamic dV/dt , IRFS4310PbF TO-220AB IRFB4310PbF 100V 5.6m: 7.0m: 130A TO-262 IRFSL4310PbF Absolute Maximum , Junction-to-Ambient (PCB Mount) , D Pak jk Units °C/W 1 01/31/06 IRF /B/S/SL4310PbF Static @ TJ = 25 , , ID = 250µA µA VDS = 100V , VGS = 0V VDS = 100V , VGS = 0V, TJ = 125°C nA VGS = 20V VGS = -20V f = , ­­­ ­­­ 130 ­­­ 550 A Conditions MOSFET symbol D showing the integral reverse


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PDF 14275D IRFB4310PbF IRFS4310PbF IRFSL4310PbF O-220AB O-262 EIA-418. IRFS4310 AN-994 SL4310 irf 540 mosfet IRFS4310PBF
800w class d circuit diagram schematics

Abstract: schematic diagram inverter 12v to 24v 1000w schematic diagram inverter 2000w SCHEMATIC WITH IR2153 1000w class d circuit diagram schematics 200w dc to ac inverter Circuit diagram AC to DC smps for plasma tv circuit diagram 12v 400W AUDIO AMPLIFIER CIRCUIT DIAGRAM schematic diagram AC to DC converter 800W IRF 9234
Text: . . . . . . . . . p 41-43 MOSFET - Automotive Trench . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . p 44-45 MOSFET - DirectFET . . . . . . . . . , . . p 46-47 MOSFET - FetKY MOSFETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . p 48 MOSFET - Low Voltage MOSFETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . p 49 MOSFET


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2006 - AN-994

Abstract: No abstract text available
Text: Frequency Circuits l Lead-Free HEXFET® Power MOSFET D G S Benefits l Improved Gate, Avalanche , diode dV/dt and dI/dt Capability VDSS RDS(on) typ. max. ID 100V 11m: 14m: 73A S GD S , www.irf.com j ij Units °C/W 1 01/23/06 IRF /B/S/SL4610PbF Static @ TJ = 25°C (unless , µA VDS = 100V , VGS = 0V VDS = 100V , VGS = 0V, TJ = 125°C nA VGS = 20V VGS = -20V f = 1MHz, open , ; duty cycle 2%. 2 A Conditions MOSFET symbol showing the integral reverse D G p-n


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PDF 95936B IRFB4610PbF IRFS4610PbF IRFSL4610PbF O-262 O-220AB EIA-418. AN-994
2004 - AN1001

Abstract: EIA-541 IRFR3911 IRFU120 IRFU3911 R120 U120 4.5v to 100v input regulator
Text: PD - 95373A IRFR3911PbF IRFU3911PbF ® SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free l VDSS RDS(on) max 0.115 100V Benefits l , 20 VDS = 100V , VGS = 0V µA 250 VDS = 80V, VGS = 0V, TJ = 150°C 100 VGS = 20V nA -100 VGS = , MOSFET symbol 14 ­­­ ­­­ showing the A G integral reverse ­­­ ­­­ 56 S p-n junction diode. ­­­ , 0.02 0.01 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = 2. Peak T


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PDF 5373A IRFR3911PbF IRFU3911PbF AN1001) IRFR3911 IRFU3911 AN-994. AN1001 EIA-541 IRFR3911 IRFU120 IRFU3911 R120 U120 4.5v to 100v input regulator
2005 - Not Available

Abstract: No abstract text available
Text: PD - 95355A SMPS MOSFET Applications High frequency DC-DC converters l Lead-Free l HEXFET® Power MOSFET IRFR15N20DPbF IRFU15N20DPbF ID 17A VDSS 200V RDS(on) max 0.165 Benefits Low , 10V, ­­­ VDD = 100V ­­­ ID = 10A ns ­­­ RG = 6.8 ­­­ VGS = 10V ­­­ VGS = 0V ­­­ VDS = 25V ­­­ pF = , Time Min. Typ. Max. Units Conditions D MOSFET symbol 17 ­­­ ­­­ showing the A G integral reverse , SHORTED Crss = C gd Coss = C ds + C gd ID = 10A VDS = 160V VDS = 100V VDS = 40V VGS , Gate-to-Source


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PDF 5355A IRFR15N20DPbF IRFU15N20DPbF AN1001) IRFR15N20D IRFU15N20D AN-994.
2004 - AN1001

Abstract: EIA-541 IRFU120 IRFU220N R120 U120 4.5V TO 100V INPUT REGULATOR
Text: IFIER LOGO PART NUMBE R IRF U120 919A 56 78 ASSE MBLY LOT CODE Note: " P " in as s embly , PD- 95063A IRFR220NPbF IRFU220NPbF SMPS MOSFET HEXFET® Power MOSFET Applications l High , = 2.9A 3.6 nC VDS = 160V 9.2 VGS = 10V, ­­­ VDD = 100V ­­­ ID = 2.9A ns ­­­ RG = 24 ­­­ , Conditions D MOSFET symbol ­­­ ­­­ 5.0 showing the A G integral reverse ­­­ ­­­ 20 S p-n junction , 160V VDS = 100V VDS = 40V 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 1 0


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PDF 5063A IRFR220NPbF IRFU220NPbF AN1001) IRFR22ON IRFU220N AN-994. AN1001 EIA-541 IRFU120 IRFU220N R120 U120 4.5V TO 100V INPUT REGULATOR
IRF series

Abstract: for driver circuit for mosfet IRF240 IRF350 MOSFET driver aK 9AA diode IRF 543 MOSFET irf460 IRF 870 gate driver for mosfet irf9130 IRF 810 irf150 compliment
Text: .m Vdd = - 100V , id = -6.5A, r q = 7.50 Vdd - - 100V , id = -11a, r g = 9.10 IRF Series Devices , IOR IRF Series Data Sheet T h e IR F D a ta S h e e t describ es 32 d evices, 28 N -C h a n n e l and 4 P -C h a n n e l, all c on tain ed in the T 0 -2 0 4 A A or T O -2 Û 4 A E p ac k a g e . T his , devices. A bsolute m axim um ratings and p ara m e tric d ata a re p re s e n te d in ta b u la r fo rm a t w ith d ev ic e s g ro u p e d a c c o r d in g to g e n e r ic a lly s h a r e d p ara m e te rs


OCR Scan
PDF
2004 - Equivalent IRF 740

Abstract: IRFR3911 IRF P CHANNEL MOSFET 100v IRF P CHANNEL MOSFET 10A 100V AN1001 EIA-541 IRFU120 IRFU3911 R120 U120
Text: PD - 95373A IRFR3911PbF IRFU3911PbF ® SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free l VDSS RDS(on) max 0.115 100V Benefits l , 20 VDS = 100V , VGS = 0V µA 250 VDS = 80V, VGS = 0V, TJ = 150°C 100 VGS = 20V nA -100 VGS = , MOSFET symbol 14 ­­­ ­­­ showing the A G integral reverse ­­­ ­­­ 56 S p-n junction diode. ­­­ , 0.02 0.01 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = 2. Peak T


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PDF 5373A IRFR3911PbF IRFU3911PbF AN1001) IRFR3911 IRFU3911 AN-994. Equivalent IRF 740 IRFR3911 IRF P CHANNEL MOSFET 100v IRF P CHANNEL MOSFET 10A 100V AN1001 EIA-541 IRFU120 IRFU3911 R120 U120
2007 - IRF 450 MOSFET

Abstract: AN-994 IRFB4410Z IRFB4410ZPBF irfs4410z marking 58A
Text: PD - 97278 IRFB4410ZPbF IRFS4410ZPbF IRFSL4410ZPbF HEXFET® Power MOSFET Applications l High , D S G D2Pak IRFS4410ZPbF TO-220AB IRFB4410ZPbF 100V 7.2m: 9.0m: 97A D S , ­­­ 62 40 Units °C/W 1 03/06/07 IRF /B/S/SL4410ZPbF Static @ TJ = 25°C (unless otherwise , , ID = 150µA µA VDS = 100V , VGS = 0V VDS = 80V, VGS = 0V, TJ = 125°C nA VGS = 20V VGS = -20V , Min. Typ. Max. Units ­­­ ­­­ ­­­ ­­­ Conditions 97c A MOSFET symbol 390 A


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PDF IRFB4410ZPbF IRFS4410ZPbF IRFSL4410ZPbF O-220AB O-262 EIA-418. IRF 450 MOSFET AN-994 IRFB4410Z IRFB4410ZPBF irfs4410z marking 58A
2007 - IRF Power MOSFET code marking

Abstract: IRF 50A EIA-541 IRFR430A IRFU430A R120 IRF 250V 100A 4.5v to 100v input regulator
Text: E MB L Y L INE "A" INT E R NAT IONAL R E CT IF IE R L OGO P AR T NU MB E R IRF U 120 11 9A , P AR T NU MB E R IRF U 120 56 AS S E MB L Y L OT CODE www.irf.com 78 DAT E CODE P = , SMPS MOSFET Applications Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l , MOSFET VDSS RDS(on) max ID 1.7 5.0A 500V Benefits Low Gate Charge Qg results in , Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol ­­­ ­­­ 5.0 showing the A


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PDF -95076B IRFR430APbF IRFU430APbF IRFR430A IRFU430A EIA-481 EIA-541. EIA-481. IRF Power MOSFET code marking IRF 50A EIA-541 IRFR430A IRFU430A R120 IRF 250V 100A 4.5v to 100v input regulator
2007 - IRF Power MOSFET code marking

Abstract: 4.5v to 100v input regulator IRF GATE LOGIC IRF 50A IRF 250V 100A 94356 IRF MOSFET 10A P R120 IRFU430A IRFR430A
Text: E MB L Y L INE "A" INT E R NAT IONAL R E CT IF IE R L OGO P AR T NU MB E R IRF U 120 11 9A , P AR T NU MB E R IRF U 120 56 AS S E MB L Y L OT CODE www.irf.com 78 DAT E CODE P = , PD - 94356B IRFR430A IRFU430A SMPS MOSFET Applications Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High speed power switching l HEXFET® Power MOSFET VDSS RDS(on) max ID , . Units Conditions D MOSFET symbol ­­­ ­­­ 5.0 showing the A G integral reverse ­­­ ­­­ 20 S


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PDF 94356B IRFR430A IRFU430A EIA-481 EIA-541. EIA-481. IRF Power MOSFET code marking 4.5v to 100v input regulator IRF GATE LOGIC IRF 50A IRF 250V 100A 94356 IRF MOSFET 10A P R120 IRFU430A IRFR430A
2004 - MOSFET IRF 380

Abstract: IRF 504 IRFB4610PbF AN-994 IRF MOSFET 10A P IRF MOSFET 100A 100v IRF igbt gate driver
Text: Frequency Circuits l Lead-Free HEXFET® Power MOSFET D G S Benefits l Improved Gate, Avalanche , diode dV/dt and dI/dt Capability VDSS RDS(on) typ. max. ID 100V 11m: 14m: 73A S GD S , www.irf.com j ij Units °C/W 1 11/11/04 IRF /B/S/SL4610PbF Static @ TJ = 25°C (unless , µA VDS = 100V , VGS = 0V VDS = 100V , VGS = 0V, TJ = 125°C nA VGS = 20V VGS = -20V f = 1MHz, open , ; duty cycle 2%. 2 A Conditions MOSFET symbol showing the integral reverse D G p-n


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PDF 5936A IRFB4610PbF IRFS4610PbF IRFSL4610PbF O-262 O-220AB EIA-418. MOSFET IRF 380 IRF 504 IRFB4610PbF AN-994 IRF MOSFET 10A P IRF MOSFET 100A 100v IRF igbt gate driver
2004 - irf 100v 300A

Abstract: MOSFET IRF 630 IRFR9120N IRFU9120N IRFR9120NPBF IRF P-Channel mosfet
Text: Fully Avalanche Rated Lead-Free HEXFET® Power MOSFET D VDSS = - 100V RDS(on) = 0.48 G ID = , -10V, I D = -3.9A -4.0 V VDS = VGS, ID = -250µA S VDS = -50V, ID = -4.0A -25 VDS = - 100V , VGS , /dt 300A/µs, VDD V(BR)DSS, TJ 150°C Min. Typ. Max. Units Conditions D MOSFET symbol , ) 10 D = 0.50 1 0.20 0.10 0.05 0.1 0.01 0.00001 0.02 0.01 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC


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PDF PD-95020A IRFR9120NPbF IRFU9120NPbF IRFR9120N) IRFU9120N) -100V EIA-481 EIA-541. EIA-481. irf 100v 300A MOSFET IRF 630 IRFR9120N IRFU9120N IRFR9120NPBF IRF P-Channel mosfet
Not Available

Abstract: No abstract text available
Text: Frequency Circuits HEXFET® Power MOSFET D VDSS RDS(on) typ. max. ID G Benefits l Worldwide , : 140A GDS D2Pak TO-220AB IRFB4310 100V 5.6m: TO-262 IRFSL4310 IRFS4310 Absolute , 1 01/20/06 IRF /B/S/SL4310 Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter , Leakage Current ––– ––– 20 µA VDS = 100V , VGS = 0V ––– ––â , €“ RG C VDS = 100V , VGS = 0V, TJ = 125° nA VGS = 20V Ω f = 1MHz, open drain VGS =


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PDF 6894A IRFB4310 IRFS4310 IRFSL4310 O-220 O-220AB O-262
2004 - NS4263

Abstract: IRF igbt gate driver irf 405 AN-994 IRFB4610 IRFS4610 IRFSL4610
Text: MOSFET VDSS RDS(on) typ. max. ID D G S G DS G DS G DS D2Pak TO-220AB IRFB4610 100V 11m: 14m: 73A TO-262 IRFSL4610 IRFS4610 Absolute Maximum Ratings Symbol , Mount) , D2Pak ij ­­­ Units 40 www.irf.com °C/W 1 11/3/04 IRF /B/S/SL4610 Static , 100 ­­­ ­­­ ­­­ 1.5 ­­­ VDS = VGS, ID = 100µA VDS = 100V , VGS = 0V VDS = 100V , VGS , = 85V, TJ = 25°C TJ = 125°C 98 ­­­ D MOSFET symbol showing the integral reverse


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PDF 96906B IRFB4610 IRFS4610 IRFSL4610 O-220AB O-262 EIA-418. NS4263 IRF igbt gate driver irf 405 AN-994 IRFB4610 IRFS4610 IRFSL4610
2004 - AN-994

Abstract: IRFB4310 IRFS4310 IRFSL4310 IRF high current n-channel irf 540 mosfet
Text: dI/dt Capability HEXFET® Power MOSFET VDSS RDS(on) typ. max. ID D G S G DS G DS G DS D2Pak TO-220AB IRFB4310 100V 5.6m: 7.0m: 140A TO-262 IRFSL4310 IRFS4310 , 62 ­­­ Units 40 1 11/3/04 IRF /B/S/SL4310 Static @ TJ = 25°C (unless otherwise , 20 µA VDS = 100V , VGS = 0V ­­­ ­­­ 250 IGSS Gate-to-Source Forward Leakage , Input Resistance ­­­ 1.4 ­­­ f = 1MHz, open drain RG VDS = 100V , VGS = 0V, TJ =


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PDF IRFB4310 IRFS4310 IRFSL4310 O-220 O-220AB O-262 EIA-418. AN-994 IRFB4310 IRFS4310 IRFSL4310 IRF high current n-channel irf 540 mosfet
2004 - Not Available

Abstract: No abstract text available
Text: MOSFET VDSS RDS(on) typ. max. ID D G S G DS G DS G DS D2Pak TO-220AB IRFB4610 100V 11m: 14m: 73A TO-262 IRFSL4610 IRFS4610 Absolute Maximum Ratings Symbol , www.irf.com °C/W 1 1011/04 IRF /B/S/SL4610 Static @ TJ = 25°C (unless otherwise specified) Symbol , €“ VDS = VGS, ID = 100µA VDS = 100V , VGS = 0V VDS = 100V , VGS = 0V, TJ = 125°C -200 Gate Input , (Body Diode) c Diode Forward Voltage trr Reverse Recovery Time A Conditions MOSFET symbol


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PDF 6906A IRFB4610 IRFS4610 IRFSL4610 O-220AB O-262 EIA-418.
Supplyframe Tracking Pixel