The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT1161CS Linear Technology IC 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO20, SO-20, MOSFET Driver
LTC1155MJ8/883B Linear Technology IC 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, CDIP8, HERMETIC SEALED, CERDIP-8, MOSFET Driver
LT1161IS#TR Linear Technology IC 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO20, SOIC-20, MOSFET Driver
LT1161IS Linear Technology IC 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO20, SOIC-20, MOSFET Driver
LTC1255N8 Linear Technology IC 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDIP8, PLASTIC, DIP-8, MOSFET Driver
LT1161CS#TR Linear Technology IC 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO20, SOIC-20, MOSFET Driver

IRF P CHANNEL MOSFET 100v Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1996 - IRF P CHANNEL MOSFET 200V 20A

Abstract:
Text: 100V 80V 60V 0.200 30V 0.100 rDS(ON) BVDSS R and IRF Series Power MOSFET TO , P P CHANNEL · BVDSS up to 1000V · All IRF types are avalanche capable · Size 1 , POLARITY N: N-Channel P : P-Channel VOLTAGE RATING 05 = 50V, 10 = 100V , 20 = 200V, etc. FEATURE , ) POLARITY N: N-Channel P : P-Channel VOLTAGE RATING 05 = 50V, 10 = 100V , 20 = 200V, etc. FEATURE , N P P N N N CHANNEL N N CHANNEL N N N N N N CHANNEL


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PDF RF1S9630SM RF1S4N100SM RF1S630SM RF1S70N06SM RF1S70N03SM O-263AB) LC96586 IRF P CHANNEL MOSFET 200V 20A P Channel Power MOSFET IRF N CHANNEL MOSFET 10A 1000V IRF P CHANNEL MOSFET IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252
2002 - 500W TRANSISTOR AUDIO AMPLIFIER

Abstract:
Text: OptoCouplers/Optically Isolated Error Amps 5.2A­22A/ 100V N-Channel PowerTrench MOSFET 12A­46A/10V­30V , 6.3A­7.5A/ 100V N-Channel PowerTrench MOSFET 16A/30V N-Channel PowerTrench MOSFETs 100%­400% Current Amplification FDS3670 FDD6676S FOD2712 6.3A­7.5A/ 100V N-Channel PowerTrench MOSFET 16A/30V , FDS6688 H11A817C H11A817C FDS6688 6.3A­7.5A/ 100V N-Channel PowerTrench MOSFET 16A/30V , Transceiver USB1T11A S-Correction IRF /IRFS630B 9A/200V N-Channel Power MOSFET IRF /IRFS6408 18A


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PDF Power247TM, 500W TRANSISTOR AUDIO AMPLIFIER IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET list of n channel power mosfet P channel 600v 20a IGBT
2005 - z44n

Abstract:
Text: Output voltage for driving N channel MOSFET Ground SOT89-5L ( Top View ) VOUT 1 VCC 2 Ordering , AP436 Synchronous Rectifier MOSFET Driver Features General Descriptions - VOUT slew-rate minimum 100V /uS @ CL=3000pF - IOUT(sink & source)=1.2 / 0.9 A - Safety considered. - Reduce power , high-speed controller designed to drive N-channel power MOSFET used as synchronous rectifiers in high , anticipating transformer output transitions then turns the power MOSFET on or off before the transitions of


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PDF AP436 00V/uS 3000pF OT89-5L, AP436 z44n mosfet z44n specification of mosfet irf IRF MOSFET driver IRF Power MOSFET code marking IRF n CHANNEL MOSFET 1N4148 marking SOT89 MARKING CODE CL sot89 Marking mosfet RL Z44N
2005 - irf 418

Abstract:
Text: Frequency Circuits G HEXFET® Power MOSFET D Benefits l Improved Gate, Avalanche and Dynamic dV/dt , Capability l Lead-Free S VDSS RDS(on) typ. max. ID 100V 5.6m: 7.0m: 140A G DS TO , ­­­ 62 40 Units °C/W www.irf.com 1 06/30/05 IRF /B/S/SL4310PbF Static @ TJ = 25 , V/°C Reference to 25°C, ID = 1mAd m VGS = 10V, ID = 75A g V µA VDS = VGS, ID = 250µA VDS = 100V , VGS = 0V VDS = 100V , VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V f = 1MHz, open drain Dynamic @ TJ = 25


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PDF 14275C IRFB4310PbF IRFS4310PbF IRFSL4310PbF O-220AB IRFB4310PbF IRFS4310PbF O-262 EIA-418. irf 418 irf 48v mosfet irf 540 mosfet
2000 - BUZ MOSFET

Abstract:
Text: 50V, 10 = 100V , 20 = 200V, etc. POLARITY N: N-Channel P : P-Channel CURRENT RATING 1 = 1A, 10 = , [ /PageMode /UseOutlines /DOCVIEW pdfmark Ordering Nomenclature Guide POWER MOSFET PRODUCTS BUZ , of Intersil Corporation IRF TYPES IR XX XXX EQUIVALENT IR PART PACKAGE DESIGNATION: FA , XX X XX XXX DEVICE TYPE RF: Standard MOSFET RL: Current Limited MOSFET PACKAGE , : TO-205AF M: TO-204AA P : TO-220AB V: 5 Lead TO-247 1K: MS-012AA 1S: TO-263 (D2-PAK) 3S 5 Lead TO


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PDF O-263, O-252, OT-223 O-252 O-220 TS-001 O-220) O-247 BUZ MOSFET power MOSFET IRF data P-CHANNEL 25A TO-247 POWER MOSFET rfd15n05 mosfet p-channel 10A irf TO-205A IRF MOSFET driver TS-001-5 irf n-channel TO-252 MOSFET
9n90c

Abstract:
Text: Device ( M/ P , MP-3, DSC, LCD TV ) Load Switch Schematic · The RDS(ON) of the P Channel MOS-FET is , / P M/ P `07. 08 99 High Voltage MOS-FET First & Best First & Best 600V ~ 700V Line-up , - M/ P 600 650 700 KEC-H Corp. 10 10 High Voltage MOS-FET First & Best First & , Signal BVDSS KMA2D8P20X P-CH MOS-FET Type Dual P -20V 5.8A FLP-8 M/ P TSOP , Power MOS-FET Selection Guide MOS-FET 2007. First Version 2007. First Version Http


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PDF 2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60 MOSFET SMPS 2N60C e-bike motor controller
2006 - irf 540 mosfet

Abstract:
Text: Frequency Circuits HEXFET® Power MOSFET D G Benefits l Improved Gate, Avalanche and Dynamic dV/dt , IRFS4310PbF TO-220AB IRFB4310PbF 100V 5.6m: 7.0m: 130A TO-262 IRFSL4310PbF Absolute Maximum , Junction-to-Ambient (PCB Mount) , D Pak jk Units °C/W 1 01/31/06 IRF /B/S/SL4310PbF Static @ TJ = 25 , , ID = 250µA µA VDS = 100V , VGS = 0V VDS = 100V , VGS = 0V, TJ = 125°C nA VGS = 20V VGS = -20V f = , ­­­ ­­­ 130 ­­­ 550 A Conditions MOSFET symbol D showing the integral reverse


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PDF 14275D IRFB4310PbF IRFS4310PbF IRFSL4310PbF O-220AB O-262 EIA-418. irf 540 mosfet MOSFET IRF 540 AN-994 IRFS4310PBF
2006 - MOSFET IRF 380

Abstract:
Text: Frequency Circuits l Lead-Free HEXFET® Power MOSFET D G S Benefits l Improved Gate, Avalanche , diode dV/dt and dI/dt Capability VDSS RDS(on) typ. max. ID 100V 11m: 14m: 73A S GD S , www.irf.com j ij Units °C/W 1 01/23/06 IRF /B/S/SL4610PbF Static @ TJ = 25°C (unless , µA VDS = 100V , VGS = 0V VDS = 100V , VGS = 0V, TJ = 125°C nA VGS = 20V VGS = -20V f = 1MHz, open , ; duty cycle 2%. 2 A Conditions MOSFET symbol showing the integral reverse D G p-n


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PDF 95936B IRFB4610PbF IRFS4610PbF IRFSL4610PbF O-262 O-220AB EIA-418. MOSFET IRF 380 AN-994
2006 - IRFS4310

Abstract:
Text: Frequency Circuits HEXFET® Power MOSFET D G Benefits l Improved Gate, Avalanche and Dynamic dV/dt , IRFS4310PbF TO-220AB IRFB4310PbF 100V 5.6m: 7.0m: 130A TO-262 IRFSL4310PbF Absolute Maximum , Junction-to-Ambient (PCB Mount) , D Pak jk Units °C/W 1 01/31/06 IRF /B/S/SL4310PbF Static @ TJ = 25 , , ID = 250µA µA VDS = 100V , VGS = 0V VDS = 100V , VGS = 0V, TJ = 125°C nA VGS = 20V VGS = -20V f = , ­­­ ­­­ 130 ­­­ 550 A Conditions MOSFET symbol D showing the integral reverse


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PDF 14275D IRFB4310PbF IRFS4310PbF IRFSL4310PbF O-220AB O-262 EIA-418. IRFS4310 AN-994 irf 540 mosfet IRFS4310PBF SL4310
800w class d circuit diagram schematics

Abstract:
Text: . . . . . . . . . p 41-43 MOSFET - Automotive Trench . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . p 44-45 MOSFET - DirectFET . . . . . . . . . , . . p 46-47 MOSFET - FetKY MOSFETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . p 48 MOSFET - Low Voltage MOSFETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . p 49 MOSFET


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2006 - AN-994

Abstract:
Text: Frequency Circuits l Lead-Free HEXFET® Power MOSFET D G S Benefits l Improved Gate, Avalanche , diode dV/dt and dI/dt Capability VDSS RDS(on) typ. max. ID 100V 11m: 14m: 73A S GD S , www.irf.com j ij Units °C/W 1 01/23/06 IRF /B/S/SL4610PbF Static @ TJ = 25°C (unless , µA VDS = 100V , VGS = 0V VDS = 100V , VGS = 0V, TJ = 125°C nA VGS = 20V VGS = -20V f = 1MHz, open , ; duty cycle 2%. 2 A Conditions MOSFET symbol showing the integral reverse D G p-n


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PDF 95936B IRFB4610PbF IRFS4610PbF IRFSL4610PbF O-262 O-220AB EIA-418. AN-994
2004 - 4.5v to 100v input regulator

Abstract:
Text: PD - 95373A IRFR3911PbF IRFU3911PbF ® SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free l VDSS RDS(on) max 0.115 100V Benefits l , 20 VDS = 100V , VGS = 0V µA 250 VDS = 80V, VGS = 0V, TJ = 150°C 100 VGS = 20V nA -100 VGS = , MOSFET symbol 14 ­­­ ­­­ showing the A G integral reverse ­­­ ­­­ 56 S p-n junction diode. ­­­ , 0.02 0.01 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = 2. Peak T


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PDF 5373A IRFR3911PbF IRFU3911PbF AN1001) IRFR3911 IRFU3911 AN-994. 4.5v to 100v input regulator AN1001 EIA-541 IRFR3911 IRFU120 IRFU3911 R120 U120
2005 - Not Available

Abstract:
Text: PD - 95355A SMPS MOSFET Applications High frequency DC-DC converters l Lead-Free l HEXFET® Power MOSFET IRFR15N20DPbF IRFU15N20DPbF ID 17A VDSS 200V RDS(on) max 0.165 Benefits Low , 10V, ­­­ VDD = 100V ­­­ ID = 10A ns ­­­ RG = 6.8 ­­­ VGS = 10V ­­­ VGS = 0V ­­­ VDS = 25V ­­­ pF = , Time Min. Typ. Max. Units Conditions D MOSFET symbol 17 ­­­ ­­­ showing the A G integral reverse , SHORTED Crss = C gd Coss = C ds + C gd ID = 10A VDS = 160V VDS = 100V VDS = 40V VGS , Gate-to-Source


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PDF 5355A IRFR15N20DPbF IRFU15N20DPbF AN1001) IRFR15N20D IRFU15N20D AN-994.
2004 - 4.5V TO 100V INPUT REGULATOR

Abstract:
Text: IFIER LOGO PART NUMBE R IRF U120 919A 56 78 ASSE MBLY LOT CODE Note: " P " in as s embly , PD- 95063A IRFR220NPbF IRFU220NPbF SMPS MOSFET HEXFET® Power MOSFET Applications l High , = 2.9A 3.6 nC VDS = 160V 9.2 VGS = 10V, ­­­ VDD = 100V ­­­ ID = 2.9A ns ­­­ RG = 24 ­­­ , Conditions D MOSFET symbol ­­­ ­­­ 5.0 showing the A G integral reverse ­­­ ­­­ 20 S p-n junction , 160V VDS = 100V VDS = 40V 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 1 0


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PDF 5063A IRFR220NPbF IRFU220NPbF AN1001) IRFR22ON IRFU220N AN-994. 4.5V TO 100V INPUT REGULATOR AN1001 EIA-541 IRFU120 IRFU220N R120 U120
IRF series

Abstract:
Text: .m Vdd = - 100V , id = -6.5A, r q = 7.50 Vdd - - 100V , id = -11a, r g = 9.10 IRF Series Devices , IOR IRF Series Data Sheet T h e IR F D a ta S h e e t describ es 32 d evices, 28 N -C h a n n e l and 4 P -C h a n n e l, all c on tain ed in the T 0 -2 0 4 A A or T O -2 Û 4 A E p ac k a g e . T his , devices. A bsolute m axim um ratings and p ara m e tric d ata a re p re s e n te d in ta b u la r fo rm a t w ith d ev ic e s g ro u p e d a c c o r d in g to g e n e r ic a lly s h a r e d p ara m e te rs


OCR Scan
PDF
2004 - Equivalent IRF 740

Abstract:
Text: PD - 95373A IRFR3911PbF IRFU3911PbF ® SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free l VDSS RDS(on) max 0.115 100V Benefits l , 20 VDS = 100V , VGS = 0V µA 250 VDS = 80V, VGS = 0V, TJ = 150°C 100 VGS = 20V nA -100 VGS = , MOSFET symbol 14 ­­­ ­­­ showing the A G integral reverse ­­­ ­­­ 56 S p-n junction diode. ­­­ , 0.02 0.01 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = 2. Peak T


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PDF 5373A IRFR3911PbF IRFU3911PbF AN1001) IRFR3911 IRFU3911 AN-994. Equivalent IRF 740 IRF P CHANNEL MOSFET 100v IRFR3911 4.5V TO 100V INPUT REGULATOR R120 IRFU3911 IRFU120 IRF P CHANNEL MOSFET 10A 100V EIA-541 AN1001
2007 - IRF 450 MOSFET

Abstract:
Text: PD - 97278 IRFB4410ZPbF IRFS4410ZPbF IRFSL4410ZPbF HEXFET® Power MOSFET Applications l High , D S G D2Pak IRFS4410ZPbF TO-220AB IRFB4410ZPbF 100V 7.2m: 9.0m: 97A D S , ­­­ 62 40 Units °C/W 1 03/06/07 IRF /B/S/SL4410ZPbF Static @ TJ = 25°C (unless otherwise , , ID = 150µA µA VDS = 100V , VGS = 0V VDS = 80V, VGS = 0V, TJ = 125°C nA VGS = 20V VGS = -20V , Min. Typ. Max. Units ­­­ ­­­ ­­­ ­­­ Conditions 97c A MOSFET symbol 390 A


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PDF IRFB4410ZPbF IRFS4410ZPbF IRFSL4410ZPbF O-220AB O-262 EIA-418. IRF 450 MOSFET AN-994 IRFB4410Z IRFB4410ZPBF irfs4410z marking 58A
2007 - IRF Power MOSFET code marking

Abstract:
Text: E MB L Y L INE "A" INT E R NAT IONAL R E CT IF IE R L OGO P AR T NU MB E R IRF U 120 11 9A , P AR T NU MB E R IRF U 120 56 AS S E MB L Y L OT CODE www.irf.com 78 DAT E CODE P = , SMPS MOSFET Applications Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l , MOSFET VDSS RDS(on) max ID 1.7 5.0A 500V Benefits Low Gate Charge Qg results in , Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol ­­­ ­­­ 5.0 showing the A


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PDF -95076B IRFR430APbF IRFU430APbF IRFR430A IRFU430A EIA-481 EIA-541. EIA-481. IRF Power MOSFET code marking IRF 50A 4.5v to 100v input regulator EIA-541 IRF 250V 100A IRFR430A IRFU430A R120
2007 - IRF Power MOSFET code marking

Abstract:
Text: E MB L Y L INE "A" INT E R NAT IONAL R E CT IF IE R L OGO P AR T NU MB E R IRF U 120 11 9A , P AR T NU MB E R IRF U 120 56 AS S E MB L Y L OT CODE www.irf.com 78 DAT E CODE P = , PD - 94356B IRFR430A IRFU430A SMPS MOSFET Applications Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High speed power switching l HEXFET® Power MOSFET VDSS RDS(on) max ID , . Units Conditions D MOSFET symbol ­­­ ­­­ 5.0 showing the A G integral reverse ­­­ ­­­ 20 S


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PDF 94356B IRFR430A IRFU430A EIA-481 EIA-541. EIA-481. IRF Power MOSFET code marking R120 IRFR430A IRF MOSFET 10A P IRF GATE LOGIC IRF 50A IRF 250V 100A EIA-541 94356B 94356
2004 - MOSFET IRF 380

Abstract:
Text: Frequency Circuits l Lead-Free HEXFET® Power MOSFET D G S Benefits l Improved Gate, Avalanche , diode dV/dt and dI/dt Capability VDSS RDS(on) typ. max. ID 100V 11m: 14m: 73A S GD S , www.irf.com j ij Units °C/W 1 11/11/04 IRF /B/S/SL4610PbF Static @ TJ = 25°C (unless , µA VDS = 100V , VGS = 0V VDS = 100V , VGS = 0V, TJ = 125°C nA VGS = 20V VGS = -20V f = 1MHz, open , ; duty cycle 2%. 2 A Conditions MOSFET symbol showing the integral reverse D G p-n


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PDF 5936A IRFB4610PbF IRFS4610PbF IRFSL4610PbF O-262 O-220AB EIA-418. MOSFET IRF 380 IRF 504 AN-994 IRF igbt gate driver IRF MOSFET 100A 100v IRF MOSFET 10A P IRFB4610PbF
2004 - irf 100v 300A

Abstract:
Text: Fully Avalanche Rated Lead-Free HEXFET® Power MOSFET D VDSS = - 100V RDS(on) = 0.48 G ID = , -10V, I D = -3.9A -4.0 V VDS = VGS, ID = -250µA S VDS = -50V, ID = -4.0A -25 VDS = - 100V , VGS , /dt 300A/µs, VDD V(BR)DSS, TJ 150°C Min. Typ. Max. Units Conditions D MOSFET symbol , ) 10 D = 0.50 1 0.20 0.10 0.05 0.1 0.01 0.00001 0.02 0.01 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC


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PDF PD-95020A IRFR9120NPbF IRFU9120NPbF IRFR9120N) IRFU9120N) -100V EIA-481 EIA-541. EIA-481. irf 100v 300A MOSFET IRF 630 IRF P-Channel mosfet IRFR9120N IRFR9120NPBF IRFU9120N
Not Available

Abstract:
Text: Frequency Circuits HEXFET® Power MOSFET D VDSS RDS(on) typ. max. ID G Benefits l Worldwide , : 140A GDS D2Pak TO-220AB IRFB4310 100V 5.6m: TO-262 IRFSL4310 IRFS4310 Absolute , 1 01/20/06 IRF /B/S/SL4310 Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter , Leakage Current ––– ––– 20 µA VDS = 100V , VGS = 0V ––– ––â , €“ RG C VDS = 100V , VGS = 0V, TJ = 125° nA VGS = 20V Ω f = 1MHz, open drain VGS =


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PDF 6894A IRFB4310 IRFS4310 IRFSL4310 O-220 O-220AB O-262
2004 - NS4263

Abstract:
Text: MOSFET VDSS RDS(on) typ. max. ID D G S G DS G DS G DS D2Pak TO-220AB IRFB4610 100V 11m: 14m: 73A TO-262 IRFSL4610 IRFS4610 Absolute Maximum Ratings Symbol , Mount) , D2Pak ij ­­­ Units 40 www.irf.com °C/W 1 11/3/04 IRF /B/S/SL4610 Static , 100 ­­­ ­­­ ­­­ 1.5 ­­­ VDS = VGS, ID = 100µA VDS = 100V , VGS = 0V VDS = 100V , VGS , = 85V, TJ = 25°C TJ = 125°C 98 ­­­ D MOSFET symbol showing the integral reverse


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PDF 96906B IRFB4610 IRFS4610 IRFSL4610 O-220AB O-262 EIA-418. NS4263 IRF igbt gate driver irf 405 AN-994 IRFB4610 IRFS4610 IRFSL4610
2004 - Not Available

Abstract:
Text: MOSFET VDSS RDS(on) typ. max. ID D G S G DS G DS G DS D2Pak TO-220AB IRFB4610 100V 11m: 14m: 73A TO-262 IRFSL4610 IRFS4610 Absolute Maximum Ratings Symbol , www.irf.com °C/W 1 1011/04 IRF /B/S/SL4610 Static @ TJ = 25°C (unless otherwise specified) Symbol , €“ VDS = VGS, ID = 100µA VDS = 100V , VGS = 0V VDS = 100V , VGS = 0V, TJ = 125°C -200 Gate Input , (Body Diode) c Diode Forward Voltage trr Reverse Recovery Time A Conditions MOSFET symbol


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PDF 6906A IRFB4610 IRFS4610 IRFSL4610 O-220AB O-262 EIA-418.
2004 - AN-994

Abstract:
Text: dI/dt Capability HEXFET® Power MOSFET VDSS RDS(on) typ. max. ID D G S G DS G DS G DS D2Pak TO-220AB IRFB4310 100V 5.6m: 7.0m: 140A TO-262 IRFSL4310 IRFS4310 , 62 ­­­ Units 40 1 11/3/04 IRF /B/S/SL4310 Static @ TJ = 25°C (unless otherwise , 20 µA VDS = 100V , VGS = 0V ­­­ ­­­ 250 IGSS Gate-to-Source Forward Leakage , Input Resistance ­­­ 1.4 ­­­ f = 1MHz, open drain RG VDS = 100V , VGS = 0V, TJ =


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PDF IRFB4310 IRFS4310 IRFSL4310 O-220 O-220AB O-262 EIA-418. AN-994 irf 540 mosfet IRF high current n-channel IRFB4310 IRFS4310 IRFSL4310
Supplyframe Tracking Pixel