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Part Manufacturer Description Datasheet Download Buy Part
LM3550SP/NOPB Texas Instruments A Flash LED Driver with Automatic Vf and ESR Detection for Mobile Camera Systems 20-UQFN -30 to 85
LM3550SPX/NOPB Texas Instruments A Flash LED Driver with Automatic Vf and ESR Detection for Mobile Camera Systems 20-UQFN -30 to 85

IRC540 equivalent Datasheets Context Search

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IRC540 equivalent

Abstract: IRC540 IRC540 SIMILAR IRC540 package drawing
Text: International S Rectifier PD-9.592A IRC540 HEXFET® Power MOSFET • Dynamic dv/dt Rating â , . These devices exhibit similar electrical and thermal characteristics as their IRF-series equivalent part , Junction-to-Ambient — — 62 9 IRC540 Electrical Characteristics @ Tj = 25°C (unless otherwise specified , =25a, Ias=28A (See Figure 12) 10 I«R IRC540 it? 10° 101 Vqs, Drain-to-Source Voltage (volts) Fig 1 , . Normalized On-Resistance Vs. Temperature 11 IRC540 Vds> Drain-to-Source Voltage (volts) Fig 5. Typical


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PDF IRC540 IRC540 equivalent IRC540 IRC540 SIMILAR IRC540 package drawing
IRC540 equivalent

Abstract: IRC540 IRC540 package drawing ScansUX1008 IRC540 SIMILAR
Text: International S Rectifier PD-9.592A IRC540 HEXFET® Power MOSFET • Dynamic dv/dt Rating â , similar electrical and thermal characteristics as their IRF-series equivalent part numbers. The provision , °C/W RejA Junction-to-Ambient — — 62 9 IRC540 _ Electrical Characteristics @ Tj = 25°C (unless , Drain-to-Source Voltage (volts) Fig 1. Typical Output Characteristics, Tc=25°C IRC540 SOus PULSE WIDTH Tc - 175 , Area 12 IRC540 125 150 175 Tg, Case Temperature (°C) Fig 9. Maximum Drain Current Vs. Case


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PDF IRC540 IRC540 equivalent IRC540 package drawing ScansUX1008 IRC540 SIMILAR
IRC540 package drawing

Abstract: No abstract text available
Text: devices exhibit similar electrical and thermal characteristics as their IR F-series equivalent part , – 4655452 □ D 1 4 5 2 C 1 5 b ■INR J IOH IRC540 Electrical Characteristics @ j = 25 , – MA55452 DD1453D RTfl ■INR DATA SHEETS l l i ! _ IRC540 V q5 , ■INR I«R IRC540 _ £ C D D) C O £ 0) o 0 C O 1 o 4 o , 740 M.INR m _ IRC540 o — 25 — — 50 â


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PDF MA55M52 DD1M535 IRC540_ IRC540 package drawing
IRC540

Abstract: irc540 application TO-220 N-Channel HEXFET Power MOSFET HEXSENSE IRC540-007 T-39-U 701-0500 b 7010500 IRC540 SIMILAR IRC540-008
Text: Summary Part Number bvdss RDS(on) 'D irc540 toov 0.077Q 28a Features: ■±2.5% Sensing Accuracy â , -220 (IR H-7) Dimensions in Millimeters and (Inches) IX (0-077) -ìSSW) E-13 IRC540 Device "E D Ì 0aams 6 , Number Case Style . IRC540 IRH-7 IRC540 -007 IR H-8 IRC540 -008 IR H-9 Other lead formings are


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PDF T-39-11 O-220 AN-959, AN-961, AN-962 AN-963. T0-220 IOI70) IRC540 irc540 application TO-220 N-Channel HEXFET Power MOSFET HEXSENSE IRC540-007 T-39-U 701-0500 b 7010500 IRC540 SIMILAR IRC540-008
IRC540

Abstract: DIODE H 5 N
Text: \ IRC540 V d s s ~ R DS(on) = 'D = 28A T O -2 2 0 HexSense Absolute Maximum Ratings , Typ. - M ax. 1.0 - Units °C /W 0 .5 0 - - 62 9 DATA SHEETS IRC540 , <2%. 10 IÜR IRC540 Fig 1. Typical Output Characteristics, Tc=25°C Fig 2. Typical , OflTA IRC540 IOR Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6 , Forward Voltage Fig 8. Maximum Safe Operating Area 12 IOR IRC540 '.VriD Fig 10a


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PDF IRC540 IRC540 DIODE H 5 N
1998 - IRF3205 equivalent

Abstract: IRF 9732 IRFz44n equivalent IRF3710 equivalent IRF4905 equivalent IRC540 equivalent irf 9450 IRF 9734 IRF5305 equivalent irf 9740
Text: up to 500V then 80% of maximum rated Bvdss Equivalent Dev. Test Hrs. @ 90°C & Failure Rate Temp , : Vs = Vd = 0V; Vg as specified Equivalent Dev. - Failure Rate @ Hrs. @ 90°C & Vg 90°C & Vg = Test , explanation of equivalent device hours for HTRB tests. c. One FIT represents one failure in one billion (1.0E+09) hours. d. EQUIVALENT DEV-HRS for the long term gate stress test are determined by Crook's Model , : Vg = Vs = 0V; Vd = 100% of maximum rated Bvdss up to 500V then 80% of maximum rated Bvdss Equivalent


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PDF O-220/D2PAK IRF9630 IRF9510L IRF9520 IRF9510 IRF9Z14 IRF9Z34 IRCZ34 IRCZ44 IRC540 IRF3205 equivalent IRF 9732 IRFz44n equivalent IRF3710 equivalent IRF4905 equivalent IRC540 equivalent irf 9450 IRF 9734 IRF5305 equivalent irf 9740
1994 - IRF5905

Abstract: MOSFET IRF 9732 transistor equivalent irf510 IRF3710 equivalent IRFz44n equivalent IRF 9732 irf2807 equivalent IRF3205 application HTGB IRD110
Text: equivalent of 4.68 billion device-hours at a junction temperature of 90OC (see sections 4.1.1, 4.1.7, 4.2.1 , stress have accumulated the equivalent of over 50 billion device-hours at a junction temperature of 90OC , Data IRC530 IRC540 IRC630 IRC634 IRC640 IRC644 IRC730 IRC740 IRC830 IRC840 IRCZ24 IRCZ34 IRCZ44 , 3.3.5.1 Generation 3, Logic Level # of Total Failures Modes Equivalent lots Qty Device Hours Tj = 90°C; Vg , lots 2 3.3.5.6 # of lots 25 Total Qty 2366 Generation 5, N-Channel, Standard Device # Modes Equivalent


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PDF O-220/D2PAK IRF5905 MOSFET IRF 9732 transistor equivalent irf510 IRF3710 equivalent IRFz44n equivalent IRF 9732 irf2807 equivalent IRF3205 application HTGB IRD110
irc224

Abstract: n6035 IRF9Z22 IRF9Z12 IRF9Z10 IRCZ34 IRC530 RC540 IRC840 IRC832
Text: €”220) irc540 ir N 100 28 0 077 irh-7 (to-220) irc630 ir N 200 9.3 0.4


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PDF 2k6847 o-205af 2n6849 2n6851 ircz44 to-220) IRF9Z10 to-220ab IRF9Z12 irc224 n6035 IRF9Z22 IRCZ34 IRC530 RC540 IRC840 IRC832
FL110

Abstract: LL110 irf7408 IRC540 equivalent lr014 IRL1Z14G IRFC024 IRFBE30 equivalent irfbc10lc IRFCG50
Text: IRCZ34 IRCZ44 IRC530 IRC540 IRC630 IRC640 IRC634 IRC644 IRC730 IRC740 IRC830 IRC840 IRCP054 V(BR)d s s , 0.30 0.30 0.30 0.25 0.25 0.25 0.64 0.51 0.51 0.51 0.51 0.51 0.51 0.25 0.25 0.25 Equivalent Device , Equivalent Device Type P-Channel HEXFETs 1 1 1 2 2 2 3 3 3 4 4 4 IRFC9014 IR FC 9 110 IRFC9210 IRFC9024 , 0.64 0.51 0.51 0.51 0.51 0.51 Equivalent Device Type IRCZ24 IRCZ34 IRC530 IRC630 IRC634 IRC730 IRC830 IRCZ44 IRC540 IRC640 IRC644 IRC740 IRC840 IRCP054 - - F-32


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PDF OT-89 OT-89 IRCC044 IRCC140 IRCC240 IRCC244 IRCC340 IRCC440 IRCC054 FL110 LL110 irf7408 IRC540 equivalent lr014 IRL1Z14G IRFC024 IRFBE30 equivalent irfbc10lc IRFCG50
SOT-123

Abstract: IRF9110 PHILIPS TO220 blf544b BIF244 IRC832 IRC530 IRC350 irc224 BLF348
Text: €”220) irc540 ir N 100 28 0 077 irh-7 (to-220) irc630 ir N 200 9.3 0.4


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PDF 2k6847 o-205af 2n6849 2n6851 OT-268 BIF548 OT-262 IRF9Z10 O-220 SOT-123 IRF9110 PHILIPS TO220 blf544b BIF244 IRC832 IRC530 IRC350 irc224 BLF348
IRF460 in TO220

Abstract: IRF09110 IRF448 of IRF9540 and IRF540 irf460 switching Application of irf250 IRF244 IRF250 TO-247 irf460 to247 irf234 n
Text: IRCZ24 IRCZ34 IRCZ44 IRC530 IRC540 IRC630 IRC640 IRC634 IRC644 IRC730 IRC740 IRC830 IRC840 IRCP054 BVd s


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PDF T0-240AA IRF460 in TO220 IRF09110 IRF448 of IRF9540 and IRF540 irf460 switching Application of irf250 IRF244 IRF250 TO-247 irf460 to247 irf234 n
IRF540 n-channel MOSFET

Abstract: GES 9515 irf740,irf840 IRC540 equivalent RTV3140 IRF540 mosfet with maximum VDS 30 V IRF540 p-channel MOSFET IRLC120 IRFC9140R AN964
Text: limitations when electrically probing in wafer form, some of the generic specifications of the equivalent , design to meet the specifications of the equivalent part: gfs, CjSS, C0ss> crss> and Tj(max) for HEXFET , grade electronic coating such as Dow Corning RTV3140 or equivalent may be applied. If the package is , 0.077 2670 38 IRC540 PD-9.498 A IRCC240 200 0.180 2670 38 IRC640 PD-9.568 IRCC244 250 0.280 2670


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PDF QD102t IRF540 n-channel MOSFET GES 9515 irf740,irf840 IRC540 equivalent RTV3140 IRF540 mosfet with maximum VDS 30 V IRF540 p-channel MOSFET IRLC120 IRFC9140R AN964
ir sensing circuit using LM358

Abstract: IRC520 compare LM324 with LM741 LM358 vs LM741 LM324 vs LM741 IRCP150 Tektronix 7603 Wavetek 187 IRCZ20 IRCP240
Text: IRC820 IRCZ30 IRC530 IRC630 IRC634 1RC730 1RC830 1RCZ40 IRC540 IRC640 1RC644 1RC740 IRC840 1RCP030


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PDF AN-959 46S-M20-S1905 J72-0403 ir sensing circuit using LM358 IRC520 compare LM324 with LM741 LM358 vs LM741 LM324 vs LM741 IRCP150 Tektronix 7603 Wavetek 187 IRCZ20 IRCP240
h bridge irfz44 mosfet

Abstract: thermostat pw ramp generator LT11581 cmos 555 Airpax motor
Text: : LOW-LEAKAGE SCHOTTKY BAT85 OR EQUIVALENT Figure 2. Low Voltage Operation r r i u m TE C H N O LO G Y , (STANDARD) IRC540 (SENSE FET) Q2, 04: IRFZ44 D1.D2: BAT83 Rs : DALE TYPE LVR-3 ULTRONIX RCS01 SIDE B: SHOWS


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PDF LT1158 h bridge irfz44 mosfet thermostat pw ramp generator LT11581 cmos 555 Airpax motor
1994 - cmos 555

Abstract: IRC540 equivalent IRFZ44 equivalent 555 pwm mosfet lt1158 and boost converter PWM dc speed control of DC motor using 555 IRF540 IRFZ4410 MTP35N06E IRC540 package drawing 12v irlz44
Text: BAT85 OR EQUIVALENT LT1158 F02 Figure 2. Low Voltage Operation 1158fb 10 LT1158 , Q4 Q1, Q3: IRF540 (STANDARD) IRC540 (SENSE FET) Q2, Q4: IRFZ44 D1, D2: BAT83 RS: DALE TYPE LVR


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PDF LT1158 150ns 3000pF 500mA requirem158 1N4148 1000F IRCZ44 MBR330 cmos 555 IRC540 equivalent IRFZ44 equivalent 555 pwm mosfet lt1158 and boost converter PWM dc speed control of DC motor using 555 IRF540 IRFZ4410 MTP35N06E IRC540 package drawing 12v irlz44
1994 - PWM dc speed control of DC motor using 555 IRF540

Abstract: IRC540 equivalent lt3525 cmos 555 POWER SUPLY PWM REGULATOR KRL Bantry Components Airpax motor motor driver IRFZ44 12v dc motor control by PWM driver PI control LT1158CN
Text: BAT85 OR EQUIVALENT LT1158 F02 Figure 2. Low Voltage Operation 9 LT1158 U W U U , 47 Q4 Q1, Q3: IRF540 (STANDARD) IRC540 (SENSE FET) Q2, Q4: IRFZ44 D1, D2: BAT83 RS: DALE TYPE


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PDF LT1158 150ns 3000pF 500mA LT1158 PWM dc speed control of DC motor using 555 IRF540 IRC540 equivalent lt3525 cmos 555 POWER SUPLY PWM REGULATOR KRL Bantry Components Airpax motor motor driver IRFZ44 12v dc motor control by PWM driver PI control LT1158CN
AN-959B

Abstract: ircp250 IRCP450 ircp054 kdsi Lm 741
Text: Die Size HEX-2 IR C Z24 HEX-3 IR C Z34 IRC530 IRC630 IRC634 IRC730 IRC830 HEX-4 IRCZ44 IRC540 IRC640


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PDF O-220 O-247 IRC530 IRC630 IRC634 IRC730 IRC830 IRCZ44 IRC540 IRC640 AN-959B ircp250 IRCP450 ircp054 kdsi Lm 741
1994 - Not Available

Abstract: No abstract text available
Text: LOGIC-LEVEL MOSFET T SOURCE D1: LOW-LEAKAGE SCHOTTKY BAT85 OR EQUIVALENT LT1158 F02 Figure 2. Low , CURRENT-SENSING MOSFET CONNECTION 9 47Ω Q4 Q1, Q3: IRF540 (STANDARD) IRC540 (SENSE FET) Q2, Q4


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PDF LT1158 150ns 3000pF 500mA 1N4148 IRCZ44 MBR330 600ms LT1158
IGBT M16 100-44

Abstract: Ericsson RBS 6102 ASEA HAFO AB GM378 Transistor B0243C Kt606 Ericsson SPO 1410 SEMICON INDEXES transistor 8BB smd tr/NEC Tokin 0d 108
Text: No file text available


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PDF W211d W296o W211c IGBT M16 100-44 Ericsson RBS 6102 ASEA HAFO AB GM378 Transistor B0243C Kt606 Ericsson SPO 1410 SEMICON INDEXES transistor 8BB smd tr/NEC Tokin 0d 108
AD0912UB-A7

Abstract: AD0812HB-C71GP AD2512HB-BV7 AD4512LX-D03 AB7505HX-HB3 AD0812XB-D91GP AD0612XB AD0812HB ad6505 AD0912
Text: No file text available


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PDF AD0912UB-A73GL 49/22i AD0912UB-A7 AD0812HB-C71GP AD2512HB-BV7 AD4512LX-D03 AB7505HX-HB3 AD0812XB-D91GP AD0612XB AD0812HB ad6505 AD0912
6Bs smd transistor

Abstract: e 156176 smd code 6Bs HDC-HE-16SS crimp tools kit 163356 163063 RSV 1.6 ZE 36 6BS SMD pcb connectors 163953
Text: No file text available


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PDF 24/RS DC-200 6Bs smd transistor e 156176 smd code 6Bs HDC-HE-16SS crimp tools kit 163356 163063 RSV 1.6 ZE 36 6BS SMD pcb connectors 163953
2013 - Not Available

Abstract: No abstract text available
Text: No file text available


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PDF 1000uF 7343H)
RG2012P-472-B-T5

Abstract: RG2012P-681-B-T5 rg2012p RG2012P-105-B-T5 RG2012P-22 RG2012P-242-B-T5 RG2012P-243-B-T5
Text: No file text available


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PDF RG2012PB-KIT RG2012PB RG2012P-101-B-T5 RG2012P-102-B-T5 RG2012P-103-B-T5 RG2012P-104-B-T5 RG2012P-105-B-T5 RG2012P-111-B-T5 RG2012P-112-B-T5 RG2012P-113-B-T5 RG2012P-472-B-T5 RG2012P-681-B-T5 rg2012p RG2012P-105-B-T5 RG2012P-22 RG2012P-242-B-T5 RG2012P-243-B-T5
2011 - ta035tcm105

Abstract: TA006TCM226 TA010TCM475 TA020TCM475 TA025TCM TA025TCM106
Text: No file text available


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PDF TA050TCM225 TA050TCM335 TA050TCM475 TA050TCM685 TA050TCM106 TA050TCM156 TA050TCM226 ta035tcm105 TA006TCM226 TA010TCM475 TA020TCM475 TA025TCM TA025TCM106
2008 - Not Available

Abstract: No abstract text available
Text: No file text available


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