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CHARACTERISTICS DIODE 1N4007

Abstract: Lampholder types 200-6400-V0 600-6000-W0 swisstac 551-8000-W0 cable gland Midget screw lampholder 852-2000 interlock system
Text: Lampholder T5.5 Terminals Continuation see next page 30 mm 52 mm 55 mm 45 mm 67 mm 70 mm S1 , 970-.000-00 1 Circuit drawing S1 P S1 Technical drawing Terminals 30 mm 52 mm 64 mm , , 24 mm dia. For flush mounting, dimensions 25 mm dia., 24 x 24 mm, 24 x 30 mm are also available , illuminative, flush mounting 0 4 02.2009 Mounting instruction Swisstac Indicator 30 - 70 mm The , > Indicator 30 - 70 mm, sealing gland and sealing ring The press ring is fitted between glan and lens. The


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Not Available

Abstract: No abstract text available
Text: PIN N-l -4: PIN 1 TO PIN N (SEETABLE 6, SHEET 5) -05,-10,-15, -20, -25, - 30 (PER ROW) LENGTH , POS -005 -010 -015 -020 -025 -030 N N-1 10 20 30 40 50 60 9 19 29 39 49 59 , ] _^ 4 -STL W IR IN G O PTIO N 1 2 3 4 FIR ST END PIN # 1 1 1 1 S E C O N D END PIN # 1 2 N-1 N W IR E NUMBER T2 T2 T2 T2 WIRING OPTION 1 2 3 4 FIRST END , 1 SECOND END P IN # 1 2 N-1 N WIRING OPTION 1 2 3 4 l W IR IN G O P TIO N 1 2


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PDF FHSC-125-XX SUB-FHSC-X-1XX-0X-01
S25400

Abstract: Sussex Semiconductor 100 Amp current 1000 volt diode s16 transistor SE 40 RECTIFIER 1N4001 1N4002 1N4003 1N4004 1N4005
Text: .25 AM PS 5 0.095 0.080 0.010 5 AM PS 30 0.180 0.160 0.010 30 AM PS 0.75 0.030 , .75-1000 S1 -50 S1 -100 S1 -200 S1 -400 S1 -600 S1 -800 S1 -1000 S1 .5-200 S1 .5-400 S1 .5-600 S1 .5-800 S1 , AMPS 0.75 0.75 0.75 0.75 0.75 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.5 1.5 1.5 1.5 1.5 3.0 3.0 3.0 3.0 3.0 16 16 16 16 16 25 25 25 30 30 30 35 35 35 40 40 40 70 70 70 , 1.2 1.5 1.2 1.5 1.2 1.5 1.2 1.5 1.2 1.5 1.2 3.0 1.2 3.0 1.2 3.0 1.2 3.0 1.2 3.0


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2006 - GENERAL SEMICONDUCTOR MARKING SJ SMA

Abstract: VISHAY MARKING SG SMA VISHAY MARKING SJ VISHAY MARKING SJ SMA s1m marking code S1J HE3 vishay sj 96 SMA MARKING S1G S1J SMA RECTIFIER S1J-E3
Text: , 30 A EAS 5 mJ IR 1.0 µA, 5.0 µA VF 1.1 V Tj max. MECHANICAL DATA Case: DO , °C Operating junction and storage temperature range Document Number 88711 30 -Jun-06 1.0 40 V A 30 A www.vishay.com 1 S1A thru S1M Vishay General Semiconductor ELECTRICAL , 5.0 IR µA 50 Typical reverse recovery time at IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A , Typical thermal resistance (1) S1G S1J S1K 75 27 S1M 85 30 UNIT °C/W Note: (1


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PDF J-STD-020C, DO-214AC 2002/95/EC 2002/96/EC 08-Apr-05 GENERAL SEMICONDUCTOR MARKING SJ SMA VISHAY MARKING SG SMA VISHAY MARKING SJ VISHAY MARKING SJ SMA s1m marking code S1J HE3 vishay sj 96 SMA MARKING S1G S1J SMA RECTIFIER S1J-E3
JIS B 0409

Abstract: No abstract text available
Text: /62-XX/ S1 DATA SHEET DOC. NO : QW0905- LDD215/62-XX/ S1 REV. : B DATE : 07- Dec. - 2005 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LDD215/62-XX/ S1 Page 1/7 Package Dimensions LDD215/62-XX/ S1 LIGITEK 10.4 (0.409") 10 9 7 8 3.6 , . Property of Ligitek Only PART NO. LDD215/62-XX/ S1 Page 2/7 Internal Circuit Diagram LDD2152-XX/ S1 9 B1 C1 A B2 C2 D E 10 1 6 7 4 3 2 F G 8 5 LDD2162-XX/ S1 9 B1 C1 A


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PDF 25Inch) LDD215/62-XX/S1 QW0905- MIL-STD-202: MIL-STD-750: MIL-STD-883: JIS B 0409
Not Available

Abstract: No abstract text available
Text: LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only BAR DIGIT LED DISPLAY LBD141/2A-XX/ S1 DATA SHEET DOC. NO : QW0905- LBD141/2A-XX/ S1 REV. : A DATE : 05 - Jul - 2005 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 1/9 PART NO. LBD141/2A-XX/ S1 Package , LBD141/2A-XX/ S1 LIGITEK 3.0±0.5 Ø0.45 TYP PIN NO.1 2.54*9=22.86 Note : 1.All dimension , PART NO. LBD141/2A-XX/ S1 Internal Circuit Diagram LBD141A-XX/ S1 1, 10 HYS HRF UG HYS HRF


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PDF LBD141/2A-XX/S1 QW0905- MIL-STD-202: MIL-STD-750: MIL-STD-883:
100 Amp current 1000 volt diode

Abstract: Rectifier 6 amp 200 volt S25400 100 Amp current 1000 volt rectifier SE 40 RECTIFIER MPS 726 S3-500-150 S3-50-150 S25-50-50 S1-1000-150
Text: CURRENT IR µA VOLTS nanosec 1N5615 S1 -200-150 1.0 1.0 1.6 200 1 40 200 , : 150 nanoseconds Max. Ultra Fast Recovery Time: 30 to 50 nanoseconds Max. Each Die Fully Glass , : FORWARD CURRENT (IF) = 1AMP REVERSE CURRENT ( IR ) = 1 AMP, , REVERSE CURRENT RECOVERY (IRR) = .5 AMP , 0.009 3 AMPS 25 0.165 0.150 0.009 25 AMPS 1 AMP 5 0.095 0.080 0.009 5 AMPS 30 0.180 0.160 0.009 30 AMPS 1.25 0.045 0.035 0.009 1.5 0.055 0.040 0.009 1.25 AMPS 8 0.100


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Abstract: No abstract text available
Text: Ligitek Only PART NO. LWK9S53/ S1 /TR1-CW-D01 Page 2/13 Package Dimensions 3.0 0.75 0.75 2.0 , Rendering Index Operating Temperature Storage Temperature Symbol IF IFP PD Ir ESD CRI Topr Tstg Ratings 30 , Lead-Free Parts LWK9S53/ S1 /TR1-CW-D01 DATA SHEET DOC. NO : QW0905-LWK9S53/ S1 /TR1-CW-D01 REV. DATE , . LWK9S53/ S1 /TR1-CW-D01 Page 1/13 Features: 1. Top view white LED. 2. white SMT package. 3. Leadframe package with individual 2 pin. 4.Wide viewing angle. 5.Soldering methods: IR reflow soldering. 6.Feature of


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PDF LWK9S53/S1/TR1-CW-D01 QW0905-LWK9S53/S1/TR1-CW-D01 LWK9S53/S1/TR1-CW-D01 LWK9S53 500hrs 30min) 30mins 15mins
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Abstract: No abstract text available
Text: Ligitek Only PART NO. LWK9S53/ S1 /TR1-WW-D01 Page 2/13 Package Dimensions 3.0 0.75 0.75 2.0 , Rendering Index Operating Temperature Storage Temperature Symbol IF IFP PD Ir ESD CRI Topr Tstg Ratings 30 , Lead-Free Parts LWK9S53/ S1 /TR1-WW-D01 DATA SHEET DOC. NO : QW0905-LWK9S53/ S1 /TR1-WW-D01 REV. DATE , . LWK9S53/ S1 /TR1-WW-D01 Page 1/13 Features: 1. Top view white LED. 2. white SMT package. 3. Leadframe package with individual 2 pin. 4.Wide viewing angle. 5.Soldering methods: IR reflow soldering. 6.Feature of


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PDF LWK9S53/S1/TR1-WW-D01 QW0905-LWK9S53/S1/TR1-WW-D01 LWK9S53/S1/TR1-WW-D01 LWK9S53 500hrs 30min) 10Max. 30mins 15mins
1999 - 2308G-1H

Abstract: MK2308G-1H
Text: 2 2 Control Logic S2, S1 CLKA1 CLKA2 CLKIN CLKA3 CLKA4 FBIN Clock Synthesis PLL , 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 F B IN C LK A4 C LK A3 VDD GND C LK B4 C LK B3 S1 1 6 p in n , S2 0 0 1 1 S1 0 1 0 1 CLKA1:A4 Tri-state (note 1) Running Running Running CLKB1:B4 Tri-state (note 1 , VDD GND CLKB1:B4 S2 S1 CLKB1:B4 GND VDD CLKA1:A4 FBIN Pin Type Input Output Power Power Output Input , MDS 2308G-1H A Int egra ted C ir cuit S ystems l 2 525 R ace St reet , S an Jo se, C A 95126 l


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PDF MK2308G-1H MK2308G-1H 2308G-1H
2005 - VISHAY MARKING SG SMA

Abstract: GENERAL SEMICONDUCTOR MARKING SJ SMA S1G HE3 VISHAY S1M S1M e3 AJ-10 JESD22-B102D J-STD-002B SG 27 surge current
Text: Ratings and Characteristics IF(AV) 1.0 A VRRM 50 V to 1000 V IFSM 40 A, 30 A IR 1.0 , -Sep-05 TJ, TSTG 1.0 40 A 30 - 55 to + 150 A °C www.vishay.com 1 S1A thru S1M Vishay , Unit 1.1 VF IR V 1.0 5.0 µA 50 Typical reverse recovery time at IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 1.8 µs Typical junction capacitance at 4.0 V, 1 MHz , (1) 27 Unit °C/W 30 Notes: (1) Thermal resistance from junction to ambient and from


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PDF DO-214AC UL-94V-0 J-STD-002B JESD22-B102D 08-Apr-05 VISHAY MARKING SG SMA GENERAL SEMICONDUCTOR MARKING SJ SMA S1G HE3 VISHAY S1M S1M e3 AJ-10 JESD22-B102D SG 27 surge current
ZRA124

Abstract: ZRA124A01 ZRA124F01 ZRA124N801 ZRA124R01 ZRA124Y01 capacitor 1c5
Text: Voltage IMIN Minimum Operating Current IR Recommended Operating Current TC Average Reverse Breakdown Voltage Temp. IR (min) to Co. IR (max) 30 RS § Slope Resistance 0.65 2 ZR Reverse Dynamic Impedance IR = 1mA f = 100Hz IAC= 0.1 IR 0.5 EN Wideband , temperature range. § V 5 30 Reverse Current (µA) 1.228 1.24 1.252 VR Change( IR (min) to IR (max) RS = IR (max) - IR (min) 40 30 C 5° =8 °C TA 25 A= °C T 40 =TA 20


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PDF ZRA124 ZRA124 ZRA124A01 ZRA124F01 ZRA124N801 ZRA124R01 ZRA124Y01 capacitor 1c5
74ALS867

Abstract: No abstract text available
Text: 0 ° C to 7 0 °C. logic s y m b o ls * ALS, AS867 CTRDIV 256 s o - i ll _ S1 - _ IS r iH L c , T IO N T A B L E SO L H L H F U N C T IO N C le a r C ount dow n Load C o u n t up S1 L L H H ab so lu te m a x im u m ratin g s o v e r o p eratin g fre e -a ir te m p e ra tu re rang e (unless , . 7V O perating fre e-a ir te m p e ra tu re range: S N 5 4 A L S ' , S N 5 4 A S , e n t C lo c k f r e q u e n c y D u r a t io n D u r a t io n o f c le a r p u ls e (SO a n d S1 lo


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PDF SN54ALS867, SN54AS867, SN54ALS869, SN54AS869 SN74ALS867, SN74AS867, SN74ALS869, SN74AS869 74ALS867
S1M DO-214AC

Abstract: s1g do-214ac SEMTECH S1M
Text: Maximum Instantaneous forward voltage at 1.0A VF Maximum DC reverse current at TA = 25 IR at rated DC blocking voltage at TA = 125 IR 50 Ctot 12 pF trr 1.8 s Typical Junction Capacitance at VR = 4.0 V, f = 1 MHZ Typical Reverse Recovery Time at IF = 0.5A, IR = 1.0A, Irr = 0.25A A 40 30 A 1.1 V 1.0 5.0 RJA 75 85 RJL Typical thermal resistance (Note 1) Operating junction and storage temperature range 1.0 27 A 30


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PDF DO-214AC) DO-214AC, MIL-STD-750, 50mVp-p S1M DO-214AC s1g do-214ac SEMTECH S1M
7Z25

Abstract: .7Z25 C7SZ125
Text: w .f a ir c h ild s e m i. c o m Absolute Maximum Ratings (N o te 1) Supply Voltage (Vc c ) DC , Low Level Input Voltage 1.8 2 .3 -5 5 V V OH High Level Output Voltage 1.8 2.3 3.0 4.5 2.3 3.0 3.0 4 .5 1.7 2.2 2.9 4 .4 1.9 2.4 2.3 3.8 1.8 2.3 3.0 4 .5 2.15 2.80 2.68 4 .2 0 0.0 0.0 , mA Iqh = - 32 mA V OL Low Level Output Voltage 1.8 2.3 3.0 4 .5 2.3 3.0 3.0 4.5 V,N = V , = 5.5V Ice 5.5V, GND w w w .f a ir c h ild s e m i. c o m 2 A C Electrical


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PDF NC7SZ125 C7SZ125 7Z25 .7Z25
224 K1C capacitor

Abstract: 104 K1C capacitor 105 K5C RCE5C1H LM3661TL-1.25
Text: Series (For General Use Only) (DC25V-DC1kV) Marking 26 29 30 Temperature Compensating Type, C0G/U2J Characteristics 30 High Dielectric Constant Type, X7R/X7S Characteristics 35 High , °C -25 to 85°C + 30 , -80% -25 to 85°C F5 Y5V 25°C - 30 to 85°C +22, -82% - 30 to , Outside Crimp 2.5mm S1 /S2 Outside Crimp Taping 2.5mm Lead distance between reference and bottom planes. M1, S1 , DB : H0 = 16.0±0.5mm M2, S2 : H0 = 20.0±0.5mm E1 : H = 17.5±0.5mm E2 : H =


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PDF C49E-22 224 K1C capacitor 104 K1C capacitor 105 K5C RCE5C1H LM3661TL-1.25
S1M DO-214AC

Abstract: No abstract text available
Text: Maximum Instantaneous forward voltage at 1.0A VF Maximum DC reverse current at TA = 25 IR at rated DC blocking voltage at TA = 125 IR 50 Ctot 12 pF trr 1.8 s Typical Junction Capacitance at VR = 4.0 V, f = 1 MHZ Typical Reverse Recovery Time at IF = 0.5A, IR = 1.0A, Irr = 0.25A A 40 30 A 1.1 V 1.0 5.0 RJA 75 85 RJL Typical thermal resistance (Note 1) Operating junction and storage temperature range 1.0 27 A 30


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PDF DO-214AC) DO-214AC, MIL-STD-750, 50mVp-p S1M DO-214AC
64x4 memory

Abstract: 1N3064 C67L4013D IR 8115
Text: V| = 5.5 V 1 mA vol Low-level Output voltage Output, O Vcc = MIN lOL = 24 mA 0.5 V IR , OR lOL = 8 mA voh High-level Output voltage Output, O Vcc = MIN lOH = - 3.0 mA 2.4 V IR , OR lOH = -0.9 , data setup to IR (Input Ready) 4 0 ns «RIDH Input data hold time to IR (Input Ready) 4 26 ns fOUT , Reset pulse* 10 35 ns 'MRS Master Reset to SI* 10 35 ns * If the FIFO is not full ( IR High), MR low forces IR low. followed by IR returning high when MR goes high. * See AC test and high-speed application


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PDF C67L4013D 15-MHz C67L4013D 64x4 memory 1N3064 IR 8115
2013 - Not Available

Abstract: No abstract text available
Text: LTW-010DCG- S1 Unit 120 mW 100 mA DC Forward Current 30 mA Reverse Voltage , Pb-free(According to RoHS) Package Dimensions Part No. Lens Color Source Color LTW-010DCG- S1 , otherwise noted. Part No. : LTW-010DCG- S1 BNS-OD-C131/A4 Page : 1 of 11 LITE-ON , condition might result in damage or failure of the component. Suggest IR Reflow Condition : R-Reflow Soldering Profile for lead free soldering (Acc. to J-STD-020) Part No. : LTW-010DCG- S1 BNS-OD-C131/A4


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PDF LTW-010DCG-S1 BNS-OD-C131/A4 EIA-471
2000 - diode s1m sma

Abstract: S1m diode diode S1G diode s1b Marking s1g diode diode S1J s1j philips SMA MARKING S1G SMA MARKING S1J DIODE S1M DO-214AC
Text: DISCRETE SEMICONDUCTORS SMA S1 series Controlled avalanche rectifiers Product specification , chip. SMA S1 series The well-defined void-free case is of a transfer-moulded thermo-setting plastic , Product specification Controlled avalanche rectifiers SMA S1 series SYMBOL VRMS S1A S1B S1D S1G , .2 t = 8.3 ms half sine wave; Tj = 25 °C prior to surge; VR = VRRMmax - - - -65 -65 30 25 +175 , CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF IR PARAMETER forward voltage reverse current


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PDF DO-214AC diode s1m sma S1m diode diode S1G diode s1b Marking s1g diode diode S1J s1j philips SMA MARKING S1G SMA MARKING S1J DIODE S1M DO-214AC
LED alta luminosidad

Abstract: sensor ultrasonico 3RG6451-3CC00 led amarillo SENSOR DE TEMPERATURA ultrasonico led verde led verde 2V ULTRASONICO ultrasonic transducer au 3ZX1012-0RG64-1CA1
Text: Spannungsfall Ud Reststrom Ir Ausgangsart S1 Ausgangsart S2 Einschaltfehlimpuls Schaltfrequenz f Hysterese , Spannungsfall Ud Reststrom Ir Ausgangsart S1 Ausgangsart S2 Einschaltfehlimpuls Schaltfrequenz f Hysterese , mA Caduta di tensione Ud <2V Corrente residua Ir < 0,01 mA Tipo di uscita S1 Tipo di uscita S2 , Tension de déchet Ud <2V Courant résiduel Ir < 0,01 mA Type de sortie S1 pnp Type de sortie S2 npn , Ir < 0,01 mA Tipo de salida S1 pnp Tipo de salida S2 npn Imp. intemp. conex. Frec. conmutación


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PDF 3RG6451-3CC00 3ZX1012-0RG64-1CA1 LED alta luminosidad sensor ultrasonico 3RG6451-3CC00 led amarillo SENSOR DE TEMPERATURA ultrasonico led verde led verde 2V ULTRASONICO ultrasonic transducer au 3ZX1012-0RG64-1CA1
s16 transistor

Abstract: 1N5804 S25400 S3-400-150 S1-400-150 S1-600-150 S1-800-150 S3-100-150 51000200 S3-500-150
Text: VOLTS VOLTS AMPS CURRENT IR µA VOLTS nanosec 1N5615 S1 -200-150 1.0 1.0 1.6 , : 150 nanoseconds Max. Ultra Fast Recovery Time: 30 to 50 nanoseconds Max. Each Die Fully Glass , : FORWARD CURRENT (IF) = 1AMP REVERSE CURRENT ( IR ) = 1 AMP, , REVERSE CURRENT RECOVERY (IRR) = .5 AMP , AM PS 5 0.095 0.080 0.009 5 AM PS 30 0.180 0.160 0.009 30 AM PS .75 AM PS 8 , ) VRMS (NOTE 4) AMPS VOLTS PEAK MAX. LEAKAGE CURRENT ( IR ) @ VDC MAX. INSTANTANEOUS


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PDF S40-600-50 S16-600-50 S5-600-50 s16 transistor 1N5804 S25400 S3-400-150 S1-400-150 S1-600-150 S1-800-150 S3-100-150 51000200 S3-500-150
2009 - VISHAY MARKING SG SMA

Abstract: VISHAY S1M GENERAL SEMICONDUCTOR MARKING SJ SMA S1G Vishay S1M e3 S1G HE3 S1M DO-214AC VISHAY MARKING SG VISHAY SMA SJ S1JHE3
Text: 40 A, 30 A EAS 5 mJ IR 1.0 µA, 5.0 µA VF 1.1 V TJ max. MECHANICAL DATA Case , junction and storage temperature range Document Number: 88711 Revision: 07-Apr-08 1.0 40 30 , S1G VF S1J S1K S1M 1.1 UNIT V 1.0 5.0 TA = 25 °C TA= 125 °C IR Typical reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 1.8 µs Typical , 85 30 UNIT °C/W Note: (1) Thermal resistance from junction to ambient and from junction to


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PDF J-STD-020, DO-214AC 2002/95/EC 2002/96/EC 18-Jul-08 VISHAY MARKING SG SMA VISHAY S1M GENERAL SEMICONDUCTOR MARKING SJ SMA S1G Vishay S1M e3 S1G HE3 S1M DO-214AC VISHAY MARKING SG VISHAY SMA SJ S1JHE3
1999 - ICS671-01

Abstract: ICS671M-01 ICS671M-01T L-525
Text: FBIN CLK5 CLK6 CLK7 2 S1 , S0 CLK8 Control Logic 2 GND 1 MDS 671-01 C I , 9 S1 1 6 p in n a rro w (1 5 0 m il) S O IC Output Clock Mode Select Table S1 S0 , ) Tri-state (note 1) - 0 1 x2 (note 2) x5 (note 2) x1 5 to 30 MHz 1 0 x2 x2 , impedence state Note 2: In S1 :S0 = 01 Mode, only the x1 output on CLK 8 will be zero delay. The x2 and x5 , ground. 8 S0 Input Select input 0. See table above. 9 S1 Input 12 GND Power


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PDF ICS671-01 ICS671-01 ICS671M-01 ICS671M-01T L-525
2009 - FS07G

Abstract: IR 30 S1
Text: 30 20 10 0 0.1 0.5 HE HE DF S1 03 G-H ED F DF S10 S1 05 G 6G -HE DF S10 , Superimposed on Rated Load (JEDEC method) Max. reverse recovery time from IF = 0.5 A ; IR = 1 A ; IRR = 0.25 A , Characteristics at Tamb = 25 °C VF IR Max. Instantaneous Forward Voltage @ 1.0A Maximum DC Reverse Current @ TA , 13mm x13mm IR , instantaneous reverse current (µA) TYPICAL REVERSE CHARACTERISTICS 1000 IF(AV , ) TYPICAL JUNCTION CAPACITANCE 70 IFSM, peak forward surge current (A) 60 50 40 30 20 10 0 1 2 5 10


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PDF HEDFS103G HEDFS107G 50Vdc FS07G IR 30 S1
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