The Datasheet Archive

Top Results (2)

Part Manufacturer Description Datasheet Download Buy Part
TLH-5934/P Tadiran Batteries Primary Battery, Lithium, 1/10D, 3.6V, 0.9Ah,
E5017NLT Pulse Electronics Corporation MODULE 10D 1:1 SIN SMD

IR 10D Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
IR10D

Abstract: IR 10D
Text: MILKY WHITE DIFFUSED rim Vf Vr Ir-10D >JA jucd lf-10mA LIMITS OF SAFE OPERATION AT 25'C PER CHIP


OCR Scan
PDF LDC-N3012R LDQ-N312RI LDO-N3012RI IR10D IR 10D
ITO-220AC

Abstract: FMX-10D IR 10D
Text: FMX- 10D Ultra fast Plastic Power Rectifiers VOLTAGE: 200V CURRENT: 10.0A FEATURE ITO , thermal resistance junction to case Storage and Operating Temperature Range FMX- 10D units Vrrm , Trr 20 10 100 5.0 -55 to +150 nS Ir Rth(jc) Tstg, Tj µA ° C/W °C Note: 1. Rev.A1 Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A www.gulfsemi.com RATINGS AND CHARACTERISTIC CURVES FMX- 10D Rev.A1 www.gulfsemi.com Gulf Semi


Original
PDF FMX-10D ITO-220AC ITO-220 MIL-STD-750, ITO-220AC FMX-10D IR 10D
1n4816

Abstract: 1N5054 1N5052 PD2004C 10D10 1n5053
Text: Characteristics 10D lF(AV ) @ Max. 'FSM @50 Hz @ 60 Hz \2y/T Tj V r r m Range 48 50 48 50 48 50* 161.4 48 A 50 , 0D04107 0 48 55452 INTERNATIONAL R EC TIFIER 1N4816,1N5052, 10D , 20D Series V O L T A G E R A T IN G S VRRM " MaxRepetitive Peak Reverse Voltage (V) 55C 04907 INTERNATIONAL RECTIFIER 0 I«R , SPECIFICATIONS 10D I f (AV) Max. average forward current @ Max. T © *FSM Max. peak one cycle, nonrepetitive , .) from device case. DO-2Q4AL (DO-41) © T= for 10D series, 1N4816 through 1N4822and 1N5052 through


OCR Scan
PDF 1N4816 1N5052 1N4816-22 1N5052-54 1N5054 PD2004C 10D10 1n5053
2013 - Not Available

Abstract: No abstract text available
Text: Spartan-6 ADP5050 PVIN1A INPUT SUPPLY 4.5V TO 15V BST1 PVIN1B C1 10𠝛F COMP1 C3 R3 , VREG VIO L2 = 2.2𝛍H R5 C6 BST2 PVIN3 R11 D2 SW2B C9 10𠝛F C11 G2 Q2 PVIN2B C5 10𠝛F C4 47𝛍F S1 R4 SS12 ON 0.8V TO 1.2V D1 VREG , VCCAUX C12 22𝛍F SS34 BST4 PVIN4 C13 10𠝛F SW4 BUCK 4 1.2A COMP4 C19 AGND , 0805 0603 0402 FDMA1024NZ Fairchild 2.0 × 2.0 × 0.8 QFN IRLHS6276 IR 2.0 × 2.0 Ã


Original
PDF ADP505x BR10508-5-9/13
2003 - GRM033R60J104

Abstract: C02E10 GRM033R60J104KE19
Text: % R6 / R7 / C8 : 0.1 max. F5 : 0.2 max. 50 · F min. Resistance to D.F. 14 Soldering Heat I.R . Dielectric Strength Appearance Capacitance Change D.F. Temperature Sudden Change I.R . 15 Dielectric , seconds. Let sit at room temperature for 48T4 hours, then measure. #Initial measurement W 0 10D for one , #Initial measurement W 0 Perform a heat treatment at 150Y 10D for one hour and then let sit for 48T4 hours , % humidity for 500T12 hours. The charge/discharge current is less than 50mA. #Initial measurement W 0 10D for


Original
PDF C02E10 GRM033R60J104 GRM033R60J104KE19
2003 - notebook display tft pinout

Abstract: LX7207 SN 102 lcd LX7207ISPTR 11KV 15KV LX7207ISP low pass filter circuit
Text: the part number (i.e. LX7207ISPTR) Copyright © 2003 Rev 1.0d , 6/16/2004 Microsemi 11861 , IR RS Temperature Co-Efficient of RS Total Capacitance Attenuation in the Pass Band Cut-off , IR = 1mA VRWM = 5.0V, T = 25°C Each Line Each Line Each Line, 0V, 1MHz 50 Environment, DC , Rev 1.0d , 6/16/2004 then corrupt the operation of the sensitive TFT's and affect the display , Capacitance vs. Reverse Bias Copyright © 2003 Rev 1.0d , 6/16/2004 Microsemi 11861 Western Avenue


Original
PDF LX7207 LX7207 IEC61000-4-2 notebook display tft pinout SN 102 lcd LX7207ISPTR 11KV 15KV LX7207ISP low pass filter circuit
LIMING relay

Abstract: IR 10D 7 24VOO T154 relay 24V d t amp LIMING VOLTAGE RELAY
Text: and mounting features. Calata^ Number Tims Range (in seconos) Input Volt f W ir in g D ia g r a m s , i i ìcv.y/ «<-yoo PR IN TE D C IR C U IT T E R M IN A L S 9 ,9 i la . y\ j «.ojuvw , -2C-115A\' B TD1Q NA-2C-120N D T010W A-2C -240N D T010N A -2C-115AN D 0.1 1C I0 0.1 ic 10 0.1 lo 10 1 to 10D 1 to 10D 1 to 100 12VDC 24VOC 115VAC 50/60 Hz Ï2 V 0 C 24VOO 115VAC 50/60 Hz ta>« Af.r '0 CVKUtl iKKfKU £\ IR C U IT LAYOU T C H A S S IS LAYOUT DELAY TO MAKE TD10DA


OCR Scan
PDF 115VAC 50/60Hz 29VDC 200ms 12VDC 24VDC 48VDC LIMING relay IR 10D 7 24VOO T154 relay 24V d t amp LIMING VOLTAGE RELAY
1N4822

Abstract: 1N4820 1N5054 IR 20D2 1N4816 IR 10D4 IR 10D 7 10d05 7510D1 10D1
Text: S.OAmp Molded Silicon Rectifier Diodes Major Ratings and Characteristics 10D 20D 1N4816 1N5052 Units , RECTIFIER SS~»F| 4S554S2 0004^7 48 55452 îNTERNATiONAL RECT IFIER 55C 04907 I«R 1N4816,1N5052, 10D , 20D , 10D 20D 1N4816 1N5052 Units Conditions 'F(AV) Max. average forward current 1.5 2.0 1.5* 1.5* A 180 , Approximate weight 0.33 (0.012) - g (oz) Case Style DO-2Q4AL (DO-41) JEDEC ©T = TAfor 10D series, 1N4816 , device case.) ©Value of series resistance required for capacitlve loads, 10D , 1N4816, and 1N5052 series


OCR Scan
PDF DD04clDb 1IM4816, 1N4816 1N5052 1N4816-22 1N5052-54 1N4822 1N4820 1N5054 IR 20D2 IR 10D4 IR 10D 7 10d05 7510D1 10D1
2002 - usb emi filter

Abstract: LX7201-15ISF LX7201-22ISF LX7202 STF201 4216kv 122 sot23 6pin usb marking 62 USB
Text: frequencies of 2.4GHz and 5.06.0 GHz PRODUCT HIGHLIGHT Copyright © 2002 Rev. 1.0d , 2005-02-07 , Resistance (-22) Temperature Coefficient of RS Pull Down Resistance Capacitor VRWM VBR IR RS RS TCOEFF RPD C Total Capacitance Copyright © 2002 Rev. 1.0d , 2005-02-07 CTOT Test Conditions IR = 1mA VRWM = 5.25V, T = 25°C Each Line Each Line Each Line Each Line Each Line Between I/O , . 1.0d , 2005-02-07 keyboards, control cards, interface boards, external memory expansion cards and


Original
PDF LX7201-xx LX7201 IEC61000-4-2, usb emi filter LX7201-15ISF LX7201-22ISF LX7202 STF201 4216kv 122 sot23 6pin usb marking 62 USB
2003 - GRM21BR60J106KE01

Abstract: No abstract text available
Text: treatment at 150 Y 10D for one hour and then let sit for 48T4 hours at room temperature. Perform the initial , #Initial measurement W 0 Perform a heat treatment at 150 Y 10D for one hour and then let sit for 48T4 hours , . #Measurement after test W 0 10D for one hour and then Perform a heat treatment at 150 Y let sit for 48T4 hours , Resistance Change to D.F. 14 Soldering I.R . Heat Dielectric Strength Appearance Capacitance Change D.F. I.R , Change D.F. I.R . Dielectric Strength 16 High Temperature High Humidity (Steady) No failure 27


Original
PDF C02E9 1000T12 GRM21BR60J106KE01
2011 - Not Available

Abstract: No abstract text available
Text: junction capacitance at 4.0V, 1MHz symbol VF UGP 10A UGP 10B UGP 10D 0.95 IR trr CJ NOTES: 1. IF = 0.5A, IR = 1.0A, IRR = 0.25A 2. Thermal resistance from junction to ambient at 0.375â , IR less than 0.1µA * High temperature soldering guaranteed: 350°C/10 seconds * 0.375" (9.5mm , Making UGP 10A UGP 10A UGP 10B UGP 10B UGP 10D UGP 10D UGP 10F UGP 10F UGP , average,0.375"(9.5mm) lead lengths at TA = 55°C IR (AV) 100 µA Typical thermal resistance


Original
PDF UGP10A UGP10K MIL-S-19500 DO-41, DO-201ADç D0-201AD
2012 - Not Available

Abstract: No abstract text available
Text: IR less than 0.1µA * High temperature soldering guaranteed: 350°C/10 seconds * 0.375" (9.5mm , . Parameter Symbol symbol device marking code RGP 10A RGP 10A RGP 10B RGP 10B RGP 10D RGP 10D RGP 10G RGP 10G RGP 10J RGP 10J RGP 10K RGP 10K RGP 10M RGP 10M , IFSM 30 A IR (AV) 100 µA RθJA 55 °C/W TJ, TSTG –50 to +150 °C , symbol RGP 10A RGP 10B RGP 10D VF Maximum instantaneous forward voltage at 1.0A


Original
PDF RGP10A RGP10MA MIL-S-19500 DO-41, DO-201ADç D0-201AD
2015 - Not Available

Abstract: No abstract text available
Text: PVIN1A C1 10𠝛F PVIN1B BST1 PVIN1C VREG EN1 C2 VREG PVIN2A PVIN2B R8 DL2 , ›H BST3 C11 R11 C6 100𝛍F S2 D2 BST2 C9 10𠝛F C5 100𝛍F Q2 SW2C PVIN3 , ›H SW1B VREG C7 10𠝛F R2 SW1A BUCK 1 6A COMP1 C3 R3 R1 FB1 R10 VCCAUX C12 47𝛍F VCCAUX_IO VCCO_1V8 CFG34 BST4 PVIN4 C14 SW4 C13 10𠝛F BUCK 4 2.5A , REG RT R20 C20 PVIN1A C21 10𠝛F VCCAUX PVIN1B COMP1 R21 FB1 BST1


Original
PDF BR10508-0-2/15
2002 - STF202

Abstract: diode marking 714 LX7202 LX7202-15ISF LX7202-22ISF
Text: Resistance Capacitor VRWM VBR IR RS RS TCOEFF RPU C Total Capacitance Copyright © 2002 Rev. 1.0d , 2007-04-11 CTOT Test Conditions IR = 1mA VRWM = 5.25V, T = 25°C Each Line Each Line , Copyright © 2002 Rev. 1.0d , 2007-04-11 DIN from connector 1 2 6 GND 5 DOUT 4 , © 2002 Rev. 1.0d , 2007-04-11 Microsemi Analgo Mixed Signal Group 11861 Western Avenue, Garden Grove , SUSCEPTABILITY Copyright © 2002 Rev. 1.0d , 2007-04-11 control cards, interface boards, external memory


Original
PDF LX7202-xx STF202 LX7202 IEC61000-4-2, STF202 diode marking 714 LX7202-15ISF LX7202-22ISF
2013 - Not Available

Abstract: No abstract text available
Text: • Estimated BOM: $4.95 (1 kpcs) ADP5050 BST1 PVIN1B C1 10𠝛F SW1A BUCK 1 4A , C4 47𝛍F R4 PVIN2A C7 R7 1.1V PGND SS12 C5 10𠝛F ALTERA CYCLONE V R2 , VTT C8 47𝛍F VCCIO_2P5 BST3 PVIN3 C9 10𠝛F BUCK 3 1.2A COMP3 C11 R11 ON C10 , ›F VCCPGM VCCH_GXBL VCCA_FPLL VCCBAT SS34 BST4 PVIN4 C13 10𠝛F BUCK 4 1.2A COMP4 EN4 , 3.3 × 3.3 × 1.0 QFN IRFHM8364 IR 3.3 × 3.3 × 0.9 QFN XAL6030-222ME NRS6045


Original
PDF ADP505x BR10509-0-11/13
2000 - LAMP DIGITAL DIMMER

Abstract: Delay linear sweep generator using IC 555 SI9945 LX1689IPW LX1689CPWTR LX1689CPW LX1689 LX1686 400HZ 20-PIN
Text: ) Copyright © 2000 Rev. 1.0d , 2004-07-12 Microsemi Integrated Products 11861 Western Avenue, Garden , 11 I_R ENABLE Exceeding these ratings could cause damage to the device. All voltages are , ) .-0.3V to VDD_P +0.5V Analog Outputs (BRITE_C, I_R , BRITE_OUT, BRITE_R, EA_OUT) .-0.3V to VDD_A_ +0.5V , © 2000 Rev. 1.0d , 2004-07-12 Microsemi Integrated Products 11861 Western Avenue, Garden Grove, CA , audible noise from the power supply components. Copyright © 2000 Rev. 1.0d , 2004-07-12 Microsemi


Original
PDF LX1689 LAMP DIGITAL DIMMER Delay linear sweep generator using IC 555 SI9945 LX1689IPW LX1689CPWTR LX1689CPW LX1689 LX1686 400HZ 20-PIN
2000 - Not Available

Abstract: No abstract text available
Text: Typical IR less than 0.1µA · High temperature soldering guaranteed: 350°C/10 seconds, 0.375" (9.5mm) lead , Characteristics Ratings at 25°C ambient temperature unless otherwise specified. SYMBOLS RGP 10A RGP 10B RGP 10D , resistance (NOTE 1) Operating junction and storage temperature range VRRM VRMS VDC IF(AV) IFSM IR (AV) RJA , at 25°C ambient temperature unless otherwise specified. SYMBOLS RGP 10A RGP 10B RGP 10D , Maximum DC reverse current at rated DC blocking voltage Maximum reverse recovery time IF=0.5A, IR


Original
PDF RGP10A RGP10M DO-204AL DO-41) MIL-S-19500 50mVp-p
2000 - DO-204AL

Abstract: RGP10A RGP10M rgp10g IR 10D rgp 10j
Text: 10B RGP 10D RGP 10G RGP 10J RGP 10K RGP 10M Unit VF 1.3 V IR 5.0 200 µA Maximum reverse recovery time IF=0.5A, IR =1.0A, Irr=0.25A trr Typical junction , efficiency · 1.0 Ampere operation at TA=55°C with no thermal runaway · Typical IR less than 0.1µA · High , RGP 10A RGP 10B RGP 10D RGP 10G RGP 10J RGP 10K RGP 10M Unit Maximum , reverse current, full cycle average 0.375" (9.5mm) lead length TA=55°C IR (AV) 100 µA Typical


Original
PDF RGP10A RGP10M DO-204AL DO-41) MIL-S-19500 50mVp-p DO-204AL RGP10M rgp10g IR 10D rgp 10j
10dl2cz

Abstract: 10FL2CZ z47a diode mark L2C
Text: TOSHIBA 10D L2C Z47A ,10FL2C Z47A ,10G L2C Z47A SILICON EPITAXIAL TYPE TO SHIBA HIGH , - - - - VF m I f m = 5A Ir r m trr tfr R th (j-c) Vr r m = Rated Ip = 2A , fail due to th e ir inherent electrical sensitivity and vulnerability to physical stress. It is the , Handbook. 1996 12-02 - 1/3 TOSHIBA 10D L2C Z47A,10FL2C Z47A,10G L2C Z47A ip - L>F , herein is subject to change w ith o u t notice. 1996 12-02 - 2/3 TOSHIBA 10D L2C Z47A


OCR Scan
PDF 10FL2C 10DL2CZ47A, 10FL2CZ47A, 10GL2CZ47A 10DL2CZ47A 10FL2CZ47A 10GL2CZ47A 10GL2CZ47A) 10dl2cz 10FL2CZ z47a diode mark L2C
22V10D

Abstract: No abstract text available
Text: D -O R ) logic structure and a new concept, the "Program m able M acro cell." T he PAL. C 22V 10D is , iste rs in th e P A L C 22V 10D h av e b e e n d esig n e d w ith th e c a p a bility to rese t d u , Package PD IR CDIP, PLCC, LCC Parameter lE R ( - ) Vx 1.5V Output Wtaveform-Measurement Level , A L C 22V 10D -10P C Package J64 P13 D14 J64 K73 L64 P13 J64 P13 D14 J64 K73 L64 P13 J64 P13 D14 J64 K73 L54 P13 Operating Range C om m ercial 120 10 5 7 PA LC22V 10D -12D M B PA


OCR Scan
PDF PALC22V10D 100-MHz 83-MHz 15-ns -15JI 15KMB PALC22 -25JC LC22V 22V10D
2001 - rpg10

Abstract: RPG10A RPG10M RGP10A RGP10A-RGP10M RGP10M
Text: Recovery Time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A Reverse Current @ rated VR TA = 25°C TA = 150°C Total Capacitance VR = 4.0 V, f = 1.0 MHz 10B 10D Forward Voltage @ 1.0 A IR CT 2001 , cavity-free junction. · Typical IR less than 1µA. · Fast switching for high efficiency. DO , TA = 25°C unless otherwise noted Parameter Value Units 10A 10B 10D 10G 10J , . Non-Repetitive Surge Current 10 10 TA = 125 º C Reverse Current, IR [mA] Forward Current, IF [A


Original
PDF RGP10A-RGP10M RGP10A RGP10M DO-41 rpg10 RPG10A RPG10M RGP10A-RGP10M RGP10M
2001 - EGP10A

Abstract: EGP10K EPG-10
Text: 10D 10F 10G 10J 10K 50 150 200 300 VRRM Maximum Repetitive Reverse Voltage IF , Forward Voltage @ 1.0 A trr Reverse Recovery Time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A Reverse Current @ rated VR TA = 25°C TA = 125°C Total Capacitance VR = 4.0 V, f = 1.0 MHz IR CT 2001 Fairchild Semiconductor Corporation 10C 10D 0.95 Units 10F 10G 10J 10K 1.25 1.7 ns µA , 100 Figure 2. Non-Repetitive Surge Current 1000 50 10 100 Reverse Current, IR [mA


Original
PDF EGP10A-EGP10K EGP10A EGP10K DO-41 EGP10K EPG-10
2001 - Not Available

Abstract: No abstract text available
Text: Recovery Time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A Reverse Current @ rated VR TA = 25°C TA = 150°C Total Capacitance VR = 4.0 V, f = 1.0 MHz 10B 10D Forward Voltage @ 1.0 A IR CT ©2001 , passivated cavity-free junction. • Typical IR less than 1µA. • Fast switching for high , Maximum Repetitive Reverse Voltage IF(AV) 10B 10D 10G 10J 10K 10M 50 100 200 , . Non-Repetitive Surge Current 10 10 TA = 125 º C Reverse Current, IR [mA] Forward Current, IF [A


Original
PDF RGP10A-RGP10M RGP10A RGP10M DO-41
2001 - Not Available

Abstract: No abstract text available
Text: Forward Voltage EGP10A- 10D EGP10F-10G EGP10J -10K Maximum DC Reverse Current At Rated DC Blocking Voltage Maximum Reverse Recovery Time EGP10A-10G EGP10J-10K Typical Junction Capacitance EGP10A- 10D , = 55OC IR 5.0uA 100uA trr 50nS 75nS CJ 22pF 15pF C IF=1.0A TA=25OC DIMENSIONS O TA = 25 C TA = 125OC IF=0.5A, IR =1.0A, IRR=0.25A TJ=25OC DIM A B C D INCHES


Original
PDF EGP10A EGP10K DO-41 -55OC 50OC/W EGP10B EGP10D EGP10F
2001 - EGP10D

Abstract: EGP10A EGP10B EGP10F EGP10G EGP10J EGP10K
Text: Forward Voltage EGP10A- 10D EGP10F-10G EGP10J -10K Maximum DC Reverse Current At Rated DC Blocking Voltage Maximum Reverse Recovery Time EGP10A-10G EGP10J-10K Typical Junction Capacitance EGP10A- 10D , = 55OC IR 5.0uA 100uA trr 50nS 75nS CJ 22pF 15pF C IF=1.0A TA=25OC DIMENSIONS O TA = 25 C TA = 125OC IF=0.5A, IR =1.0A, IRR=0.25A TJ=25OC DIM A B C D INCHES


Original
PDF EGP10A EGP10K DO-41 -55OC 50OC/W EGP10B EGP10D EGP10F EGP10D EGP10A EGP10B EGP10F EGP10G EGP10J EGP10K
Supplyframe Tracking Pixel