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    IPB60R385CP Search Results

    IPB60R385CP Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IPB60R385CP Infineon Technologies N-Channel MOSFETs (>500V - 900V); Package: PG-TO263-3; VDS (max): 600.0 V; Package: D2PAK (TO-263); RDS(ON) @ TJ=25°C VGS=10: 385.0 mOhm; ID(max) @ TC=25°C: 9.0 A; IDpuls (max): 27.0 A; Original PDF
    IPB60R385CPATMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 9A TO-263 Original PDF
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    IPB60R385CP Price and Stock

    Infineon Technologies AG IPB60R385CPATMA1

    MOSFET N-CH 600V 9A TO263-3
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    DigiKey IPB60R385CPATMA1 Cut Tape
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    IPB60R385CPATMA1 Reel
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    IPB60R385CPATMA1 Digi-Reel 1
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    Rochester Electronics IPB60R385CPATMA1 4,000 1
    • 1 $2.28
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    • 100 $2.14
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    TME IPB60R385CPATMA1 1
    • 1 $2.15
    • 10 $1.49
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    Infineon Technologies AG IPB60R385CP

    COOLMOS POWER TRANSISTOR Power Field-Effect Transistor, 9A I(D), 600V, 0.385ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
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    ComSIT USA IPB60R385CP 465
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