The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT3485EDD-3#TRPBF Linear Technology LT3485 - Photoflash Capacitor Chargers with Output Voltage Monitor and Integrated IGBT Drive; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C
LT3585EDDB-3#TRPBF Linear Technology LT3585 - Photoflash Charger with Adjustable Input Current and IGBT Driver; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C
LT3585EDDB-1#TRMPBF Linear Technology LT3585 - Photoflash Charger with Adjustable Input Current and IGBT Driver; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C
LT3585EDDB-3 Linear Technology LT3585 - Photoflash Charger with Adjustable Input Current and IGBT Driver; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C
LT3485EDD-0 Linear Technology LT3485 - Photoflash Capacitor Chargers with Output Voltage Monitor and Integrated IGBT Drive; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C
LT3485EDD-1#TR Linear Technology LT3485 - Photoflash Capacitor Chargers with Output Voltage Monitor and Integrated IGBT Drive; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C

IGBT PNP Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2002 - calculation of IGBT snubber

Abstract:
Text: collector-to-emitter on-state voltage and becomes completely saturated. This is because the IGBT pnp transistor portion , Application Note 9020 April, 2002 IGBT Basic II By K.J Um CONTENTS Section I. Gate drive considerations 1. Introductions 2. Gate Drive Considerations 3. IGBT switching waveforms A. Analysis of , pattern e. Common emitter problems 5. Conclusion 1 Rev. A, April 2002 Section II - IGBT Protections 1. Introduction - IGBT Failure Mechanism 2. FBSOA and Short Circuit Destruction A. FBSOA 3


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2001 - P-Channel IGBT

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Text: + buffer junction (J1). This reduces the current gain of the PNP transistor. As such, an IGBT with an , - ( V GE ­ V th ) ( 1 ­ PNP ) L CH The IGBT 's saturated collector current and transconductance , Application Note 9016 February, 2001 IGBT Basics 1 by K.S. Oh CONTENTS 1. Introduction , . 4-3. Electrical Characteristics of IGBT , . The IGBT developed in the early 1980s has the combined advantages of the above two devices. It has a


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1997 - INT-944

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Text: of Figure 1, the IGBT consists of a PNP driven by an N-Channel MOSFET in a pseudoDarlington , from the same PNP in heavy saturation. It should be noted, however, that the emitter of an IGBT covers , speed of an IGBT is the lifetime of the minority carriers in the N- epi, i.e., the base of the PNP , made of four alternate P-N-P-N layers. Given the necessary conditions (NPN + PNP > 1) the IGBT could , Index AN-983 (v.Int) IGBT Characteristics (HEXFET® is a trademark of International Rectifier


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PDF AN-983 INT-944 AN983 IRF 949 INT990 C50U IRGPC50U IRGBC40U GAte turn off thyristors gate driver unit sec irf840 INT-990
AN-983

Abstract:
Text: of Figure 1, the IGBT consists of a PNP driven by an N-Channel MOSFET in a pseudoDarlington , from the same PNP in heavy saturation. It should be noted, however, that the emitter of an IGBT covers , speed of an IGBT is the lifetime of the minority carriers in the N- epi, i.e., the base of the PNP , P-N-P-N layers. Given the necessary conditions (NPN + PNP > 1) the IGBT could latch-up like a thyristor , Application Note AN-983 IGBT Characteristics 1. How The IGBT Complements The Power MOSFET


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PDF AN-983 1000C, AN-983 AN983 PN channel MOSFET 10A INT-944 IRF840 complementary equivalent irf840 Equivalent transistors for IRGPC50U what is fast IGBT transistor C50U INT-990
INT-944

Abstract:
Text: of Figure 1, the IGBT consists of a PNP driven by an N-Channel MOSFET in a pseudoDarlington , from the same PNP in heavy saturation. It should be noted, however, that the emitter of an IGBT covers , speed of an IGBT is the lifetime of the minority carriers in the N- epi, i.e., the base of the PNP , P-N-P-N layers. Given the necessary conditions (NPN + PNP > 1) the IGBT could latch-up like a thyristor , Application Note AN-983 IGBT Characteristics 1. How The IGBT Complements The Power MOSFET


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PDF AN-983 055mJ/A 1000C, INT-944 Equivalent transistors for IRGPC50U INT-990 irf 300V IGBT loss calculate thyristor rectifier 600v 100a C50U BUX98 AN983 AN-983
1997 - INT-944

Abstract:
Text: of Figure 1, the IGBT consists of a PNP driven by an N-Channel MOSFET in a pseudoDarlington , from the same PNP in heavy saturation. It should be noted, however, that the emitter of an IGBT covers , speed of an IGBT is the lifetime of the minority carriers in the N- epi, i.e., the base of the PNP , P-N-P-N layers. Given the necessary conditions (NPN + PNP > 1) the IGBT could latch-up like a thyristor , AN-983 (v.Int) IGBT Characteristics (HEXFET® is a trademark of International Rectifier


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PDF AN-983 1000C, INT-944 Equivalent transistors for IRGPC50U IRF 949 AN983 irgbc20u Similar all transistor IRF 310 INT-990 conductivity meter circuit 7A, 100v fast recovery diode 10a 400v power amplifier bipolar transistor
2002 - An Introduction to IGBT Operation

Abstract:
Text: loop gain of the PNP and NPN transistors combination is greater than one, then the IGBT will latch on , AN4503 Application Note AN4503 An Introduction To IGBT Operation Application Note Replaces , designer. 1. IGBT STRUCTURES All IGBTs on the market have either a punch-through structure (PT) or , and NPT IGBT structures. In practice an IGBT chip consists of many such elements connected in parallel. The NPT structure is the most basic one for an IGBT . It consists of a four layer sandwich of


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PDF AN4503 AN4503 AN4503-4 An Introduction to IGBT Operation IGBT EQUIVALENT MOS Controlled Thyristor mosfet 1500v n mosfet depletion static characteristics of mosfet and igbt
2002 - Gate Drive Considerations for Maximum IGBT Efficiency

Abstract:
Text: AN4507 Application Note AN4507 Gate Drive Considerations For Maximum IGBT Efficiency , considerations that should be taken into account when designing a gate drive circuit for an IGBT , and gives , should be considered:1) Conduction Losses 2) IGBT Switching Losses 3) Anti Parallel Diode Switching Losses 4) Device Protection 1.2 IGBT SWITCHING LOSSES When turning an IGBT on or off the switching , ) Circuit Layout Rg 1.1 CONDUCTION LOSSES When an IGBT is turned on the collector emitter voltage Vce


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PDF AN4507 AN4507 AN4507-3 Gate Drive Considerations for Maximum IGBT Efficiency SCHEMATIC transformer drive IGBT TURN ON AND TURN OFF CIRCUITS OF IGBT IGBT application note isolation gate drive transformer medical
IXAN0063

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Text: Insulated Gate Bipolar Transistor ( IGBT ) Basics Abdus Sattar, IXYS Corporation IXAN0063 1 , intended to give the reader a thorough background on the device technology behind IXYS IGBTs. IGBT Fundamentals The Insulated Gate Bipolar Transistor ( IGBT ) is a minority-carrier device with high input impedance and large bipolar current-carrying capability. Many designers view IGBT as a device with MOS , make use of the advantages of both Power MOSFET and BJT, the IGBT has been introduced. It's a


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PDF IXAN0063 2001Indonesia IXAN0063 IGBT THEORY AND APPLICATIONS MOSFET IGBT THEORY AND APPLICATIONS schematic diagram UPS IGBT transistor igbt Mohan power electronics converters applications a BJT safe operating area SCHEMATIC servo dc IGBTS IXSH30N60B2 input output bjt npn transistor
2008 - ZXGD3004E6

Abstract:
Text: AN52 IGBT gate drive considerations in electronic lamp ballasts Yong Ang, Applications Engineer, Zetex Semiconductors The use of Zetex high speed non-inverting gate drivers for IGBT half-bridge , IGBT 's gate drive for electronic ballast using bipolar transistors. The charge necessary to fully enhance an IGBT is a function of its Gate-Source and Drain-Gate (Miller) capacitances and is delivered via an external gate resistor. The gate charge and input capacitance value for an IGBT is lower


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PDF D-81541 ZXGD3004E6 ZXGD3003E6 ZXGD3002 ZXGD3002E6 ZXGD3003 2A mosfet igbt driver stage BJT 2222 ZXGD3001E6 ZETEX GATE DRIVER ZXGD3004
2002 - the calculation of the power dissipation for the igbt and the inverse diode in circuits

Abstract:
Text: AN4504 Application Note AN4504 IGBT Ratings And Characteristics Application Note Replaces September 2000 version, AN4504-3.0 Load AN4504-3.1 July 2002 PNP VD applications this diode , the ratings parameters on a typical IGBT datasheet and describes how the current and power ratings , for a given case temperature (for example in the case of Dynex Semiconductor IGBT module datasheets, the case temperature is specified between the range of 70 to 85°C). G VGE Emitter Fig. 1 IGBT


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PDF AN4504 AN4504 AN4504-3 the calculation of the power dissipation for the igbt and the inverse diode in circuits AN4505 AN4506 Calculation of major IGBT operating parameters
2000 - difference between IGBT and MOSFET IN inverter

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Text: MOSFET TURN-OFF PORTION PNP TURN-OFF PORTION 800 1000 Figure 5. IGBT Current Turn-off , available to perform switching functions; however, all have strong and weak points. ENTER THE IGBT By , state switch would exist. The Insulated-Gate Bipolar Transistor ( IGBT ) technology offers a combination of these attributes. The IGBT is, in fact, a spin-off from power MOSFET technology and the structure of an IGBT closely resembles that of a power MOSFET. The IGBT has high input impedance and fast


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PDF AN1541/D r14525 difference between IGBT and MOSFET IN inverter IGBT SCHEMATIC use igbt for 3 phase induction motor mosfet base induction heat circuit rectifier pwm igbt POWER BJTs DATA SHEET OF IGBT n mosfet depletion 1A sink power transistor bjt 1000 a what is THERMAL RUNAWAY IN RECTIFIER MOSFET
1997 - IGBT SCHEMATIC

Abstract:
Text: PNP TURN­OFF PORTION 800 1000 Figure 5. IGBT Current Turn­off Waveform In power MOSFETs , on­resistance without sacrificing switching speed. R DS(on) 2.7 T VDSS (1) ENTER THE IGBT By , state switch would exist. The Insulated­Gate Bipolar Transistor ( IGBT ) technology offers a combination of these attributes. © MOTOROLA Motorola, Inc. 1995 The IGBT is, in fact, a spin­off from power MOSFET technology and the structure of an IGBT closely resembles that of a power MOSFET. The


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PDF AN1541/D AN1541 AN1541/D* IGBT SCHEMATIC motorola scr cross reference BJT npn motorola power BJT PNP mosfet base induction heat circuit MGW20N60D BJT characteristics BJT isolated Base Drive circuit GATE ASSISTED TURN-OFF THYRISTORS Drive Base BJT
IGBT

Abstract:
Text: relationship between data book specifications and a new Insulated Gate Bipolar Transistor ( IGBT ) subcircuit SPICE model. Expanded IGBT Model Figure 2 shows the complete subcircuit. Table 1 shows the , to emulate different IGBT devices. The model accurately simulates, switching loses, nonlinear , component at a time: Q1 is a PNP transistor which functions as an emitterfollower to increase the current handling ability of the IGBT . BF (Forward Beta) is determined by the step in the turn-off tail which


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2006 - A 3150 igbt driver

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Text: , when the lower IGBT , Q2 in the bridge is turned on, the emitter of Q1 is pulled to -HV. Similarly, when the upper IGBT , Q1 is turned on, the collector of Q2 is pulled to +HV. This charges CBSH and , gate resistor will help in avoiding cross conduction, limiting IGBT switching losses and improve di , , designers can control the IGBT gate signal flow, and have an option to slow down the device commutation , circuit allows tuning of the IGBT turn-on speed by varying RGATE. During turn-off, the anti-parallel


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PDF HCPL-3020 HCPL-0302 HCPL-3020 HCPL-0302 5988-9290EN 5988-4082EN 5988-9769EN A 3150 igbt driver 3020 8 pin optocoupler inverter IGBT driver hcpl3120 IGBT Gate Drive Optocoupler A 3020 8 pin HCNW 3150 igbt gate driver 3120 v IGBT DRIVER IGBT driver hcpl3120 20A igbt
2002 - IGBT tail time

Abstract:
Text: Voltage is equivalent to the The IGBT 's breakover voltage under an open base condition and it p-n-p , ) is the p-n-p transistor's current gain when voltage is applied across the IGBT , collector-to-emitter , PNP transistor's current gain , the NPT IGBT 's increases and, depends on becomes higher than that , Punch-Through IGBT Having a New n-Buffer Layer Hideo Iwamoto, Hideki Haruguchi, Yoshifumi Tomomatsu, John F , . A new punch-through (PT) IGBT has been developed which exhibits the merits of the NPT approach


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PDF 200-V IGBT tail time igbt simulation NATIONAL IGBT local lifetime IGBT cross IGBT PNP mitsubishi igbt cm Semiconductor Group igbt
1995 - POWER BJTs

Abstract:
Text: latching process. COLLECTOR PNP NPN GATE r b EMITTER Figure 3. IGBT Detailed Equivalent , PNP structure. IGBT is a minority carrier device during the forward conduction, and as such the , Motorola Inc. DEVICE CHARACTERISTICS The recently introduced Insulated Gate Bipolar Transistor ( IGBT , Insulated Gate Bipolar Transistor ( IGBT ) device is a power semiconductor device introduced to overcome the , optimally implement all of the advantages of the IGBT device, it is essential that the designer understand


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PDF AN1540/D AN1540 AN1540/D* POWER BJTs AN1540 IXYS SCR Gate Drive vertical pnp bjt Drive Base BJT failure analysis IGBT IGBT tail time Nippon capacitors
2002 - reverse-conducting thyristor

Abstract:
Text: SiliconControlled Rectifier (ASCR) · Power Transistor · Power MOSFET · Insulated-Gate Bipolar Transistor ( IGBT ) · , Bipolar Transistors IGBT Structure and Operation 1.10 Gate-Commutated Thyristors and Other , ( IGBT ) The IGBT has the high input impedance and high-speed characteristics of a MOSFET with the conductivity characteristic (low saturation voltage) of a bipolar transistor. The IGBT is turned on by , the gate signal zero or slightly negative. The IGBT has a much lower voltage drop than a MOSFET of


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PDF MCT00, reverse-conducting thyristor gto Gate Drive circuit IGCT thyristor IGCT mitsubishi Usha Rectifier Emitter Turn-Off thyristor eto thyristor HEXFET Power MOSFET designer manual GTO triac MOS-Controlled Thyristor
1999 - SCHEMATIC IGNITION WITH IGBTS

Abstract:
Text: approximation the IGBT can be modelled as a pnp transistor driven by an n-channel Power MOSFET (fig.8). This , an IGBT never goes below a diode threshold. As the second stage of a pseudo-Darlington, the PNP is , same PNP in heavy saturation. It should be noted, however, that the emitter of an IGBT covers the , of an IGBT rated at 500V and 8A is up to twice that of a bipolar transistor with comparable ratings , APPLICATION NOTE 2. IGBT TECHNOLOGY CHARACTERISTICS AND 2.1 Structure Except for the p+ substrate


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PDF AN484/1293 SCHEMATIC IGNITION WITH IGBTS mosfet to ignition coil CAR IGNITION WITH IGBTS SCHEMATIC IGNITION iGBT automotive ignition automotive ignition coil on plug transistor Electronic Ignition Application note Electronic car ignition circuit STGP10N50L NMOS Transistor KA
2001 - applications of mos controlled thyristor

Abstract:
Text: effect of lowering the current gain of the n-p-n transistor (n-p-n) so that n-p-n + p-n-p <1. Thus , PNP A (B) EQUIVALENT CIRCUIT In the remainder of this note we describe the operation and characteristics of this device. Device Operation The IGBT is a four-layer (n-p-n-p) device with an MOS-gated , (base of the p-n-p transistor). These electrons lower the potential of the n-region, forward biasing , value, as is typical of a thyristor. Device Characterization Two different lots of IGBT structures


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2002 - AN-7505

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Text: their epitaxial drain region. In a new MOS-gate controlled device called an IGBT , this limitation is , Modulated Field Effect Transistor;[4] the device has also been called an IGBT or Insulated Gate Bipolar , : When a IGBT is turned off, the injected minority carriers that remain in the epitaxial drain region , schematic diagram of the original IGBT structure[4] is shown in Figure 1(a), and the equivalent circuit is , current gain of the n-p-n transistor in the equivalent circuit so that npn + pnp <1, thereby preventing


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PDF AN-7505 AN-7505 AN75 circuit diagram of thyristor controlled rectifier MOS-Gated Thyristor SCHEMATIC WITH IGBTS semiconductor power devices
1999 - ED26 diode

Abstract:
Text: current gain of the n-p-n transistor (n-p-n) so that n-p-n + p-n-p <1. Thus latching is prevented and , G SHUNTING RESISTANCE NPN PNP A (B) EQUIVALENT CIRCUIT In the remainder of this note we describe the operation and characteristics of this device. Device Operation The IGBT is a , VGT, electrons pass into the n-region (base of the p-n-p transistor). These electrons lower the , Characterization Two different lots of IGBT structures, consisting of about 10 wafers/lot, have been successfully


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PDF AN8602 ED26 diode mos Turn-off Thyristor 8602 RECTIFIER 8602 RECTIFIER 4 PIN P channel 600v 20a IGBT Pelly ED-26 diode INTERSIL 1981 MOS Controlled Thyristor
2001 - AN-7505

Abstract:
Text: controlled device called an IGBT , this limitation is overcome by modulating the conductivity of the , IGBT or Insulated Gate Bipolar Transistor. The devices, as originally described, had most of the , . However, they also had two disadvantages: When a IGBT is turned off, the injected minority carriers that , with rapid gate voltage turnoff. Modified Structure A schematic diagram of the original IGBT , in the equivalent circuit so that npn + pnp <1, thereby preventing latching over a large operating


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PDF AN-7505 AN-7505 fairchild low power transistor 1977
1999 - Drive Base BJT

Abstract:
Text: The IGBT can be modelled, as a first approximation, as a pnp transistor driven by a Power MOSFET , short circuit, and the influence of gate polarisation. 1/10 APPLICATION NOTE 1 IGBT STRUCTURE The IGBT is a natural evolution of the vertical Power MOSFET for high current, high voltage , the same conditions, the VCE(sat) of the IGBT is lower. The vertical section shown in figure 1 together with the equivalent circuit shows that the structure of the IGBT is very similar to that of a


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2008 - 2.5kV ZENER DIODE

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Text: Zener & TVS TVS (< 4KW ) TVS ( > 4KW) Thyristor FET & IGBT JFET HV >2.5KV HC >200A N IGBT +diode PIN P IGBT N IGBT Transistors NPN > 400 V PNP < 1W PNP >1 W PNP >400V Comp Pair IC & Vreg IC Power Module High Voltage FET & IGBT Bridges Battery Bypass DC - DC Converter Other P IGBT +diode Data Sheet Developmental Notes NOTE: All


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PDF SPD2520 SPD2540 DO-35) RS0109_ E19670 E30018 E-060298 E-080141 MIL-PRF-19500 Q312rD 2.5kV ZENER DIODE radfet zener diode 562 SPD2530SMS SPD2530 SPD2520SMS SPD2520 SiC JFET high voltage fet Diode SCD
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