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Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT3485EDD-3#TRPBF Linear Technology LT3485 - Photoflash Capacitor Chargers with Output Voltage Monitor and Integrated IGBT Drive; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C
LT3585EDDB-3#TRPBF Linear Technology LT3585 - Photoflash Charger with Adjustable Input Current and IGBT Driver; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C
LT3585EDDB-1#TRMPBF Linear Technology LT3585 - Photoflash Charger with Adjustable Input Current and IGBT Driver; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C
LT3585EDDB-3 Linear Technology LT3585 - Photoflash Charger with Adjustable Input Current and IGBT Driver; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C
LT3485EDD-0 Linear Technology LT3485 - Photoflash Capacitor Chargers with Output Voltage Monitor and Integrated IGBT Drive; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C
LT3485EDD-1#TR Linear Technology LT3485 - Photoflash Capacitor Chargers with Output Voltage Monitor and Integrated IGBT Drive; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C

IGBT 4000V Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
IGBT 4000V

Abstract: isoplus ixys mounting IXEL40N400 ixys IXLF19N250A Discrete IGBTS Igbts guide isoplus
Text: Contact: Donald Humbert Tel: 408-982-0700 Fax: 408-496-0670 IXYS Releases 4000V /40A IGBT to Expand its Very High Voltage (VHV) IGBT Family SANTA CLARA, Calif.-(BUSINESS WIRE)-Feb. 13, 2006-IXYS Corporation (NASDAQ:SYXI News) announces the release of a new 4000V /40A IGBT , the IXEL40N400. IXYS' unique offering of discrete 2500V and 4000V VHV IGBTs provide a myriad of benefits to system designers in high voltage applications. The very high voltage and current ratings of these parts coupled with simplified


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PDF 000V/40A 2006--IXYS IXEL40N400. IGBT 4000V isoplus ixys mounting IXEL40N400 ixys IXLF19N250A Discrete IGBTS Igbts guide isoplus
IGBT 4000V

Abstract: snubbers norfolk norfolk capacitors GT1844 NCL capacitor Norfolk Capacitors gt1844 GTO catalogue GT1626 NCL GTO Thyristor protection capacitor gt1710
Text: Norfolk Capacitors Limited GTO Snubbers Thyristor Snubbers IGCT Protection DC Filters IGBT Filters IGBT - AC Harmonic Filters Energy Discharge Capacitors Section Start Previous Page GTO Protection Capacitors ~ tables Next Page 1800V - 2000V - 2500V - 2600V - 3300V - 3600V - 4000V - 4500V - 6000V - 7200V Home Page GATOS - 4000V range Udc = 2200V About Us A brief , administrator if any pages have errors UN = 3200V Us = 4000V Umax = 1100V rms Imax (Arms) Ip


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PDF GT1710 GT1611 GT1844 GT1612 GT1845 GT1718 GT1613 GT1614 GT1626 1024x768 IGBT 4000V snubbers norfolk norfolk capacitors GT1844 NCL capacitor Norfolk Capacitors gt1844 GTO catalogue GT1626 NCL GTO Thyristor protection capacitor gt1710
norfolk capacitors

Abstract: IGCT thyristor GC2663 GC2672 NCL capacitor NCL GTO Thyristor protection capacitor snubbers norfolk IGCT GC2661 gct thyristor
Text: Norfolk Capacitors Limited GTO Snubbers Thyristor Snubbers IGCT Protection DC Filters IGBT Filters IGBT - AC Harmonic Filters Energy Discharge Capacitors Section Start Previous Page IGCT Protection Capacitors ~ tables Next Page Home Page 4000V - 4500V - 6000V GCT - 4000V range Udc = 2800V UN = 3200V Us = 4000V Umax = 1100V rms Imax (Arms) Ip (A) Rs (mW) H (nH) Rq (°C/W) Ø (µF) (±2 mm) (±2 mm) 0.25 30 2600 1.82 12


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PDF GC2661 GC2662 GC2663 GC2681 GC2682 GC2683 GC2684 GC2685 GC2686 GC2687 norfolk capacitors IGCT thyristor GC2663 GC2672 NCL capacitor NCL GTO Thyristor protection capacitor snubbers norfolk IGCT GC2661 gct thyristor
NCL snubber capacitor

Abstract: ZC2105 IGBT 4000V Norfolk Capacitors Thyristor snubber ZC2115 NCL capacitor zc2105 capacitor ncl zc ZC2116 mw 137
Text: Norfolk Capacitors Limited GTO Snubbers Thyristor Snubbers IGCT Protection DC Filters IGBT Filters IGBT - AC Harmonic Filters Energy Discharge Capacitors Section Start Previous Page Thyristor Snubber Capacitors ~ tables Next Page Home Page 4000V - 6500V - 8000V ZC - 4000V range Udc = 1750V UN = 2800V Rs L Rq (mW) (nH) (°C/W) (µF) Imax (Arms) 0.33 9 150 4.01 , 4000V ZC - 6500V range Udc = 2800V UN = 4500V Rs L Rq (mW) (nH) (°C/W) (µF) Imax (Arms


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PDF ZC2550 ZC2552 ZC2554 ZC2556 1024x768 ZC2557 ZC2558 ZC2559 ZC2561 NCL snubber capacitor ZC2105 IGBT 4000V Norfolk Capacitors Thyristor snubber ZC2115 NCL capacitor zc2105 capacitor ncl zc ZC2116 mw 137
IXGF30N400

Abstract: IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 IXGT25N250 IXBX64N250 IXTH1N250 Discrete IGBTS
Text: available in the Power Semiconductor Marketplace. These IGBT , MOSFET and BiMOSFETTM Families provide cost-effective solutions for applications requiring up to 4000V of power switching capability, with current , 3500 IGBT Market 3000 2500 Graphic on the left illustrates IXYS' IGBT device 2000 , Very High Voltage IGBTs IXYS' offers a unique portfolio of discrete 2500V, 3000V, and 4000V VHV IGBTs , to 4000V ) and superior thermal performance. IXYS will also be offering a full range of high speed


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PDF O-264 IXBX55N300 PLUS247 IXBF55N300 O-268 O-247 IXGF30N400 IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 IXGT25N250 IXBX64N250 IXTH1N250 Discrete IGBTS
2006 - IXLF19N250A

Abstract: isoplus ixys mounting Discrete IGBTS IXEL40N400 IGBT 1500V 40a Igbts guide device xray generators IXFX55N50 IXFR55N50 ixys pb free
Text: / 4000V Very High Voltage (VHV) IGBTs SIMPLIFY DESIGN, REDUCE COST AND IMPROVE RELIABILITY FOR HIGH , 0.50ºC/W ISOPLUS i4-PACTM IXEL40N400 4000V 40A 4.00V 220mJ / 2800V 0.33ºC/W , Very High Voltage Ratings ­ 2500V, 4000V High Current Ratings ­ 19A, 40A ISOPLUS i4-PacTM and , capability. Cost effective clip mounting. ISOPLUS i5-PacTM ISOPLUS i5-PacTM C G E IGBT , series of discrete 2500V and 4000V VHV IGBTs providing a myriad of benefits to system designers in high


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PDF 500V/4000V IXLF19N250A IXEL40N400 220mJ IXLF19N250A isoplus ixys mounting Discrete IGBTS IXEL40N400 IGBT 1500V 40a Igbts guide device xray generators IXFX55N50 IXFR55N50 ixys pb free
1998 - VCES 4000V

Abstract: No abstract text available
Text: +150 (125) 3400 Class F 40/125/56 per IGBT , Tcase = 25 °C AC, 1 min. 4) DIN 40 040 DIN IEC 68 , Tcase = 25/75 °C; tp = 1 ms A A A A2s SEMITRANS® M Low Loss IGBT Modules SKM 400 GA 174 D , Eon Eoff per IGBT VGE = 0 VCE = 25 V f = 1 MHz VCC = 1200 V VGE = ­15 V / +15 V 3) IC = 300 , ) Thermal characteristics Rthjc Rthjc Rthch per IGBT per diode D per module GA Features · MOS input (voltage controlled) · N channel, homogeneous Silicon structure (NPT- Non punchthrough IGBT ) ·


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Not Available

Abstract: No abstract text available
Text: SEMITRANS® M Low Loss IGBT Modules SKM 500 GA 174 D P re lim in a ry D a ta Inverse Diode 8) If = , ,8 100 3,3 - V V mA mA nA V V S 1,4 - CcHC per IGBT - - C¡es 1 , characteristics Rthjc Rthjc Rthch per IGBT per diode D per module SEMITRANS 4 JE GA Features â , IGBT ) • Low inductance case • Low tail current with low temperature dependence • High short , A/|xs, VGE = 0 V 3> Use V GEoff = -5 . -15 V 4) Option ViS0| = 4000V /1 min add suffix ,H4‘â


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PD432206

Abstract: powerex igbt six pack igbt module testing SCR 2000V 1000A CM150DU-24NFH CM400DU-24NFH ND411635 pwm INVERTER welder CM400DU-12NFH MIL-STD-1189
Text: switching applications and 60 to 70 kHz for soft switching applications ­ the Powerex NFH-Series IGBT , industrial IGBT modules are optimized for hard switched PWM inverters with carrier frequencies less than about 15 kHZ, where low VCE(sat) is imperative. The NFH-Series IGBT features optimized VCE (sat). Due , Esw(off)/A of the nearest competitor. In early 2003, Powerex raised the bar in IGBT technology with the introduction of NF-Series, which offered the best IGBT performance in the industry by providing


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PDF 30kHz PD432206 powerex igbt six pack igbt module testing SCR 2000V 1000A CM150DU-24NFH CM400DU-24NFH ND411635 pwm INVERTER welder CM400DU-12NFH MIL-STD-1189
1998 - cv190

Abstract: IGBT 4000V
Text: +150 (125) 3400 Class F 40/125/56 per IGBT , Tcase = 25 °C AC, 1 min. 4) DIN 40 040 DIN IEC 68 , Tcase = 25/75 °C; tp = 1 ms A A A A2s SEMITRANS® M Low Loss IGBT Modules SKM 200 GB 174 D , Eon Eoff per IGBT VGE = 0 VCE = 25 V f = 1 MHz VCC = 1200 V VGE = ­15 V / +15 V 3) IC = 150 , characteristics Rthjc Rthjc Rthch per IGBT per diode D per module GB Features · MOS input (voltage controlled) · N channel, homogeneous Silicon structure (NPT- Non punchthrough IGBT ) · Low inductance case


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2012 - Not Available

Abstract: No abstract text available
Text: IXEL40N400 Very High Voltage IGBT VCES IC110 VCE(sat) tfi(typ) ( Electrically Isolated Tab) = = ≤ = 4000V 40A 3.2V 425ns ISOPLUS i5-PakTM Symbol Test Conditions VCES TJ = 25°C to 150°C VGES Maximum Ratings 4000 V Continuous ±20 V VGEM , Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 4000V ~ Electrical Isolation UL Recognized , IC110, VCE = 10V, Note 1 14 ISC IC = IC110, VCC = 3400V, VCM < 4000V ISOPLUS i5-PakTM HV


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PDF IXEL40N400 IC110 425ns 40N400
1998 - LS-60

Abstract: DIN 44 300 T1
Text: +150 (125) 3400 Class F 40/125/56 per IGBT , Tcase = 25 °C AC, 1 min. 4) DIN 40 040 DIN IEC 68 , Tcase = 25/70 °C; tp = 1 ms A A A A2s SEMITRANS® M Low Loss IGBT Modules SKM 300 GB 174 D , Eon Eoff per IGBT VGE = 0 VCE = 25 V f = 1 MHz VCC = 1200 V VGE = ­15 V / +15 V 3) IC = 200 , ) Thermal characteristics Rthjc Rthjc Rthch per IGBT per diode D per module GB Features · MOS input (voltage controlled) · N channel, homogeneous Silicon structure (NPT- Non punchthrough IGBT ) ·


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A174D

Abstract: No abstract text available
Text: 1080 / 800 A Vges ± 20 V Ptot per IGBT , ToaSe = 25 °C 2780 W Tj, (Tstg) -40 . +150 (125) °C , Low Loss IGBT Modules SKM 400 GA 174 D Preliminary Data SEMITRANS 4 Characteristics Symbol , \Tj = 25 (125) °C J - 3,3(3,6) - V 9fs V ce = 20 V, lc = 300 A 108 150 - S CcHC per IGBT - - 1,4 , (72) - nc Thermal characteristics Rthjc per IGBT - - 0,045 °c/w Rthjc per diode D - - 0 , €¢ N channel, homogeneous Silicon structure (NPT- Non punch-through IGBT ) • Low inductance case â


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1998 - SKM 300 CIRCUIT

Abstract: B628
Text: . +150 (125) 3400 Class F 40/125/56 per IGBT , Tcase = 25 °C AC, 1 min. 4) DIN 40 040 DIN , /70 °C Tcase = 25/70 °C; tp = 1 ms A A A A2s SEMITRANS® M Low Loss IGBT Modules SKM 500 GA , ) tf Eon Eoff per IGBT VGE = 0 VCE = 25 V f = 1 MHz VCC = 1200 V VGE = ­15 V / +15 V 3) IC = , ) Thermal characteristics Rthjc Rthjc Rthch per IGBT per diode D per module GA Features · MOS input (voltage controlled) · N channel, homogeneous Silicon structure (NPT- Non punchthrough IGBT ) ·


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2009 - 40N400

Abstract: IXEL40N400 40N40 IGBT abb IGBT 4000V siemens igbt chip
Text: Preliminary Technical Information IXEL40N400 Very High Voltage IGBT VCES IC90 VCE(sat) tfi(typ) ( Electrically Isolated Tab) = 4000V = 40A 3.5V = 425ns ISOPLUS i5-PakTM Symbol Test Conditions VCES TJ = 25°C to 125°C VGES Maximum Ratings 4000 V Continuous , Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 4000V Electrical Isolation UL Recognized , , Note 1 14 ISC IC = IC90, VCC = 3400V, VCM < 4000V ISOPLUS i5-PakTM HV Outline E 23 200


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PDF IXEL40N400 425ns 40N400 IXEL40N400 40N40 IGBT abb IGBT 4000V siemens igbt chip
2012 - 40n400

Abstract: 40N40 DS99385B
Text: Very High Voltage IGBT ( Electrically Isolated Tab) IXEL40N400 VCES IC110 VCE(sat) tfi(typ) = = = 4000V 40A 3.2V 425ns ISOPLUS i5-PakTM Symbol VCES VGES VGEM IC25 IC110 ICM PC TJ TJM Tstg TL TSOLD VISOL FC Weight Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for , Surface 4000V ~ Electrical Isolation UL Recognized Package High Peak Current Capability Low Saturation , , Note 1 IC = IC110, VCC = 3400V, VCM < 4000V VGE = 15V, tSC < 10s 6040 278 120 5.2 275 63 134 160 100 55


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PDF IXEL40N400 IC110 425ns 40N400 40N40 DS99385B
1999 - P-Channel mosfet 400v to220

Abstract: IGBT DRIVE 500V 300A 400V switching transistor 0,3A mosfet Microwave Oven Inverter Control IC forklift apec igbt 100a 150v CT60AM-18B Transistor Mosfet N-Ch 30V ct60am
Text: MOSFETs RDS(on), Small packages, QG, Future Direction DS(on) 3. High Power IGBT Modules for , Prototype 600V Trench IGBT developed 1994 - 400V Strobe Flash IGBT production started 1995 - 250V 400A, 600A Trench gate IGBT module production started 1998 - 1200V Trench IGBT developed 1999 - Production of 600V, 1200V trench gate IGBT modules started 1999 - Production of sub µm trench MOSFETs started , VGSS and ESD ruggedness ESD W ithstanding (Human Body Model) FY10AAJ-03A (No failures) 4000V


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PDF CM600HA-5F CM450HA-5F CM350DU-5F CM200TU-5F CT60AM-18B P-Channel mosfet 400v to220 IGBT DRIVE 500V 300A 400V switching transistor 0,3A mosfet Microwave Oven Inverter Control IC forklift apec igbt 100a 150v CT60AM-18B Transistor Mosfet N-Ch 30V ct60am
2008 - Not Available

Abstract: No abstract text available
Text: Applications: Bridge Circuits AC & DC Motor Drives Battery Supplies Power Supplies Large IGBT Circuit , below. Example: LD834024 is a 4000V , 240 Ampere Dual SCR Isolated POW-R-BLOKTM Module. Note , , Low-level VTM Coefficients, Full Range Symbol IDRM IRRM VFM V(TO)1 rT1 Test Conditions Up to 4000V , TJ=125°C Up to 4000V , TJ=125°C ITM=1000A TJ = 125°C, I = 15%IT(AV) to IT(AV) TJ = 125°C, I = 10A to 6kA VTM =


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Not Available

Abstract: No abstract text available
Text: climate per IGBT , T oase = 25 °C AC, 1 min. 4> DIN 40 040 DIN IEC 68 T.1 V V A A V W °C V 1 9 0 /1 3 6 540/ 400 1450 10500 VcE S A A A A2s SEMITRANS® M Low Loss IGBT , structure (NPT- Non punchthrough IGBT ) • Low inductance case • Low tail current with low temperature , 1200 V, — dip/dt = 1500 A/|xs, VGE = 0 V 4) Option ViS = 4000V /1 min add suffix 0| ,H4" - on


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2001 - Inverter Delta

Abstract: eupec igbt 10kv 6.5kV IGBT igbt 3.3kv EUPEC Thyristor 1200A eupec igbt 3.3kv Thyratron dc to ac inverter DIAGRAM thyristor inverter thyratron eupec igbt 6.5kV
Text: The new 6.5kV IGBT module: a reliable device for medium voltage applications Thomas Schuetze , modern high voltage IGBT chip and packaging technology eupec is developing a product range of 6.5kV IGBT , of two 3.3kV IGBT modules for the above mentioned line voltages, can now make use of the single , across semiconductor (V CEmax = 1.5 . 2.0 x V DC,nom ) 6.5kV IGBT Modules 6.5kV IGBT Modules Fig , electronics: the Infineon Field Stop (FS) IGBT and the EMCON diode (1). The FS IGBT overcomes drawbacks of


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TOSHIBA IGBT

Abstract: 800 kw Toshiba AC motor MG900GXH1US53 4 kw Toshiba AC motor diode 900A
Text: TOSHIBA MG900GXH1US53 TOSHIBA IGBT (TENTATIVE DATA) MODULE MG900GXH1US53 SILICON N-CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Features · High Input Impedance · Enhancement Mode · Electrodes are Isolated from Case EQUIVALENT CIRCUIT MAXIMUM RATINGS (Ta=25degC) Characteristic Symbol Collector Current RMS 4500 V VGES Gate-Emitter , dissipation NOTE.2: Vcc=<3000V, Vcp=< 4000V , Ls=180nH, RG=6.4ohm, VGE=+/-15V, Tj=<125degC 2002-01-19


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PDF MG900GXH1US53 25degC) TOSHIBA IGBT 800 kw Toshiba AC motor MG900GXH1US53 4 kw Toshiba AC motor diode 900A
2007 - Not Available

Abstract: No abstract text available
Text: Series works The high frequency insulated gate bi-polar transistor ( IGBT ) driven converter takes the , ) Electrical Capacity in VA (watts) Regulator engine High frequency 20 kHz IGBT driven voltage regulation , ) Surge let-through voltages Class 2 and 3, 4000V , 3000A: L-N: 200V, L-G: 200V Note: For maximum


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PDF VRp-22500/30000-0338 30kVA, 5/30kW, 220/380V 230/400vac VRp-22500-30000-0338-3ph-2007-02-15
2007 - C0030BG400

Abstract: T0900EA45A T2400GA45E igbt failure T0850 T1800GA T2400GA45 T0500NA25E T0800TA52E T0850TA52B
Text: be used for high side or low side IGBT gate driving up to an operating voltage of 4000V . 1.2 A , Date:- 11 May, 2007 Data Sheet Issue:- 4 Provisional Data IGBT Gate Driver Type C0030BG400 , An IXYS Company IGBT Gate Driver Type C0030BG400 Characteristics PARAMETER MIN TYP , Page 2 of 8 May, 2007 WESTCODE An IXYS Company IGBT Gate Driver Type C0030BG400 Notes on , . output current up to 30A. 1.4 IGBT protection is ensured by VCE monitoring. 1.5 The error feedback


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PDF C0030BG400 voltage595 C0030BG400 T0900EA45A T2400GA45E igbt failure T0850 T1800GA T2400GA45 T0500NA25E T0800TA52E T0850TA52B
2008 - IGBT DRIVER SCHEMATIC

Abstract: IGBT failure IGBT 4000V T2400GA45E C0030CG400 T0850TA52B IGBT driver 4000V 47K potentiometer Zener ZPD igBT gate driver
Text: March, 2008 WESTCODE An IXYS Company IGBT Gate Driver Type C0030CG400 Notes on Rating and Characteristics 1.0 Main Characteristics 1.1 A C0030CG400 is IGBT gate driver with two synchronous outputs. It can be used for parallel IGBT gate driving up to an operating voltage of 4000V . 1.2 A single +15 +/- , IGBT Gate Driver with Two Synchronous Outputs Type C0030CG400 Absolute Maximum Ratings Ratings VDD , IGBT Gate Driver Type C0030CG400 Characteristics PARAMETER MIN TYP MAX UNITS dv/dt


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PDF C0030CG400 C0030CG400 IGBT DRIVER SCHEMATIC IGBT failure IGBT 4000V T2400GA45E T0850TA52B IGBT driver 4000V 47K potentiometer Zener ZPD igBT gate driver
2013 - Not Available

Abstract: No abstract text available
Text: S Advance Technical Information IXYL60N450 High Voltage XPTTM IGBT VCES = 4500V IC110 = 38A VCE(sat) ï€ ï€ ï‚£ ï€ 3.30V (Electrically Isolated Tab) ISOPLUS i5-PakTM Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = , 4000V ~ Electrical Isolation High Blocking Voltage High Peak Current Capability Low Saturation Voltage , 4000V , VGE = 0V V  μA μA  ±100 3.0 Applications nA  3.30 V


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PDF IXYL60N450 IC110 60N450 H9-645)
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