The Datasheet Archive

IFN147 datasheet (2)

Part Manufacturer Description Type PDF
IFN147 InterFET N-Channel Silicon Junction Field-Effect Transistor Original PDF
IFN147 InterFET N-Channel silicon junction field-effect transistor Original PDF

IFN147 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2001 - 2SK147 equivalent

Abstract: 2SK147 IFN147
Text: Databook.fxp 1/13/99 2:09 PM Page D-6 D-6 01/99 IFN147 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Low-Noise Audio Amplifier ¥ Equivalent to Japanese 2SK147 Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating At 25°C free air temperature: IFN147 Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current


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PDF IFN147 2SK147 NJ450 2SK147 equivalent 2SK147 IFN147
IFN147

Abstract: No abstract text available
Text: E6 9-97 IFN147 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR Absolute maximum ratings at TA = 25°C • LOW NOISE AUDIO AMPLIFIER • Equivalent to Japanese 2SK147 Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current 10 mA Continuous Device Power Dissipation 300 mW Power Derating 2.4 mW/°C IFN147 At 25°C free air temperature: Min Gate Source Breakdown Voltage Test Conditions VGS(0ff) Drain Saturation Current (Pulsed) Unit


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PDF IFN147 2SK147 NJ450 00Q0BG4 IFN147
2001 - bpw21 op

Abstract: 2SK147 ir photodiode amplifier BPW21 FD1500W fast photodiode amplifier low noise ir photodiode amplifier tp 0401 2SK147 equivalent SFH213
Text: high capacitance photodiode. The LT1806 is used for its high gain bandwidth and low noise. The IFN147 , voltage noise, but they have high input capacitance (75pF max for the IFN147 ). Serendipitously, the


Original
PDF LT1806: 325MHz OT-23 LT1806 BPW34B 390kHz ODD45W 170pF bpw21 op 2SK147 ir photodiode amplifier BPW21 FD1500W fast photodiode amplifier low noise ir photodiode amplifier tp 0401 2SK147 equivalent SFH213
1999 - 2SK146

Abstract: 2SK147 equivalent 2sk146 equivalent transistor sdg 2SK105 2sk146 datasheet 2SK105 Datasheet 2sk152 equivalent 2SK147 Japanese Transistor
Text: /99 2:09 PM Page D-6 D-6 01/99 IFN147 N-Channel Silicon Junction Field-Effect Transistor , Dissipation Power Derating At 25°C free air temperature: IFN147 Static Electrical Characteristics


Original
PDF 2SK17 2SK40 2SK59 2SK105 2SK113 IFN17 IFN40 IFN59 IFN105 IFN113 2SK146 2SK147 equivalent 2sk146 equivalent transistor sdg 2SK105 2sk146 datasheet 2SK105 Datasheet 2sk152 equivalent 2SK147 Japanese Transistor
2SK146

Abstract: 2SK147 equivalent 2sk146 datasheet 2sk146 equivalent 2SK147 IFN152 IFN146 2SK113 equivalent transistor TO 2sk146 2SK152
Text: /99 2:09 PM Page D-6 D-6 01/99 IFN147 N-Channel Silicon Junction Field-Effect Transistor , Dissipation Power Derating At 25°C free air temperature: IFN147 Static Electrical Characteristics


Original
PDF 2SK113 2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44 NJ132 NJ132L 2SK146 2SK147 equivalent 2sk146 datasheet 2sk146 equivalent 2SK147 IFN152 IFN146 2SK113 equivalent transistor TO 2sk146 2SK152
1999 - NJ450

Abstract: D45 TRANSISTOR IFN363 f36 transistor IFN147 IFN146 2SK363 J109 J110A J110
Text: Databook.fxp 1/13/99 2:09 PM Page F-36 F-36 01/99 NJ450 Process Silicon Junction Field-Effect Transistor ¥ LOW R(on) Switch ¥ Low-Noise, High Gain Amplifier S-D Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts G 10 mA +150°C ­ 65°C to +175°C Devices in this Databook based on the NJ450 Process. S-D Datasheet G 2SK363 IFN146, IFN147 IFN363 J108, J109 J110, J110A Die Size = 0.028" X 0.028" All


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PDF NJ450 2SK363 IFN146, IFN147 IFN363 J110A D45 TRANSISTOR IFN363 f36 transistor IFN147 IFN146 2SK363 J109 J110A J110
2SK147

Abstract: 2SK147 equivalent IFN147
Text: E6 IF N 1 4 7 8-94 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR · LOW NOISE AUDIO AMPLIFIER · Equivalent to Japanese 2SK147 Absolute maximum ratings at TA = 25°C Reverse Gate Source & Reverse Gate Drain Voltage - 40 V Continuous Forward Gate Current 10 mA Continuous Device Power Dissipation 300 mW Power Derating 2.4 mW/°C IFN147 At 25°C free air temperature: Process NJ450 Max Unit V -1 nA pA V mA Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse


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PDF 2SK147 IFN147 NJ450 T0-18 2SK147 2SK147 equivalent IFN147
2004 - 2SK147

Abstract: ir photodiode amplifier low noise ir photodiode amplifier bpw21 amplifier fast photodiode amplifier 2SK147 equivalent bpw21 op SFH213 BPW21 BPW34B
Text: ultralow voltage noise but they have high input capacitance (75pF max for the IFN147 ). Serendipitously , high gain bandwidth and low noise. The IFN1471 ultralow noise JFET operates at its IDSS (VGS = 0V


Original
PDF 500pF 100kHz, 130nV/Hz 41nV/Hz 130nV/Hz/314) 100kHz. 2SK147 SFH213 BPW34B ODD45W 2SK147 ir photodiode amplifier low noise ir photodiode amplifier bpw21 amplifier fast photodiode amplifier 2SK147 equivalent bpw21 op SFH213 BPW21 BPW34B
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