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8MP624

Abstract: IDT8MP624S
Text: sidebrazed DIP, refer to the IDT8M624S /IDT8M612S. All inputs and outputs of the IDT8M P624S/ IDT8MP612S are


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PDF IDT8MP624) IDT8MP612) 40-pin P624S/IDT8MP612S IDT8MP624S, IDT8MP612S 64K/32K 8MP624 8MP612 IDT8MP624S
8M624

Abstract: No abstract text available
Text: 1 MEGABIT (64K x 16-BIT) & 512K (32K x 16-BIT) CM O S STATIC RAM M ODULE IDT8M624S IDT8M612S FEATURES: DESCRIPTION: • High-density 1024K/512K-bit CMOS static RAM module The IDT8M624S , using four IDT71256 32K x 8 static RAMs ( IDT8M624S ) or tw o IDT71256 static RAMs (IDT8M612S) in , /512K static RAMs available. The IDT8M624S /IDT8M612S are available with access times as fast as 40ns , €” IDT8M624S 64K x 16 option). The m odule also offers a full standby mode of 440mW (max.). The IDT8M624S


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PDF 16-BIT) IDT8M624S IDT8M612S 1024K/512K-bit IDT8M624S/IDT8M612S IDT71256 IDT8M624S) 8M624
1999 - 54FCT162245

Abstract: IDT7164L85L32B 5962-9576101MSA 54fct16244 IDT54FCT244ATEB IDT7164L70L32B 54FCT16245 5962-92213 5962-8762901RA IDT7201LA120DB
Text: No file text available


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IDT8M624

Abstract: 8M624 8M624S 64k dynamic RAM 8M612S100 IDT8M624S
Text: Integrated Device Technology, Inc. 64K x 16 32K x 16 CMOS STATIC RAM MODULE IDT8M624S IDT8M612S FEATURES: · High-density CMOS static RAM module 64K x 16 organi zation ( IDT8M624S ) or 32K x 16 , TTL-compatible DESCRIPTION: The IDT8M624S /IDT8M612S are high-speed CMOS state RAM modules constructed on an co-fired, multi-layer ceramic substrate using four 32Kx 8 static RAMs ( IDT8M624S ) or two 32K x 8 static , , high-reliability technology, CEM O STM . The IDT8M624S /IDT8M612S are available with access times as fast as 25ns


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PDF IDT8M624S IDT8M612S IDT8M624S) IDT8M612S) 40-pin IDT8M624S/IDT8M612S IDT8M624S, IDT8M612S 64K/32K MtL-STD-883 IDT8M624 8M624 8M624S 64k dynamic RAM 8M612S100
IDT8M624

Abstract: 8M624
Text: Integrated Device Technology, Inc. 64K x 16 32K x 16 CMOS STATIC RAM MODULE IDT8M624S IDT8M612S FEATURES: · High-density CMOS static RAM m odule 64K x 16 organi zation ( IDT8M624S ) o r3 2 K x , an co-fired, multi-layer ceramic substrate using four 32K x 8 static RAMs ( IDT8M624S ) or two 32K x 8 , -pin sidebrazed DIP. All inputs and outputs of the IDT8M624S / IDT8M612S are TTL-compatible and operate from a , IDT8M624S , IDT8M612S 64K/32K x 16 CMOS STATIC RAM MODULE MILITARY AND COMMERCIAL TEMPERATURE RANGE PIN


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PDF IDT8M624S IDT8M612S IDT8M624S) IDT8M612S) 40-pin 624S/IDT8M IDT8M624S, IDT8M612S 64K/32K MIL-STD-883 IDT8M624 8M624
1999 - UM61256FK-15

Abstract: YD 6409 philips diode PH 33J um61256 um61256ak-15 PZ 5805 PHILIPS UM6164 KM6264BLS-7 UM61256ak sram IDT8M624
Text: IDT7MPV6202SA66M IDT7MPV6203SA66M IDT7MPV6273SA66M IDT7MPV6274SA66M IDT8M612S40CB IDT8M624S40CB IDT8M824S35CB


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PDF 74F257, 74FCT257, 74FCT257T QS32257 QS3257 QS32257 UM61256FK-15 YD 6409 philips diode PH 33J um61256 um61256ak-15 PZ 5805 PHILIPS UM6164 KM6264BLS-7 UM61256ak sram IDT8M624
philips diode PH 33J

Abstract: UM61256FK-15 sem 2106 inverter diagram IDT7024L70GB um61256 UM61256ak sram um61256fk15 HIGH VOLTAGE ISOLATION DZ 2101 C5584 IDT74LVC1G07ADY
Text: IDT7MPV6202SA66M IDT7MPV6203SA66M IDT7MPV6273SA66M IDT7MPV6274SA66M IDT8M612S40CB IDT8M624S40CB IDT8M824S35CB


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PDF 10-BIT QS3L384) QS3L2384 QS3L384 QS3L2384 philips diode PH 33J UM61256FK-15 sem 2106 inverter diagram IDT7024L70GB um61256 UM61256ak sram um61256fk15 HIGH VOLTAGE ISOLATION DZ 2101 C5584 IDT74LVC1G07ADY
2000 - IDT7M144S90

Abstract: 7MPV6283 IDT8M624 8M624 7M135 7MPV6274 8M824 7MPV6189 7M4048 8M612
Text: 16 SRAM MODULE IDT8M824S35C IDT8M824S35CB IDT8M624S40CB None None None 8M824 128K X 8 SRAM


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PDF S-001_ 7MPV6203 IDT7MPV6203SA66M 7MPV6207 IDT7MPV6207SA66M 7MPV6253 IDT7MPV6253S15M 7MPV6256 IDT7MPV6256S9M IDT7MPV6256SA66M IDT7M144S90 7MPV6283 IDT8M624 8M624 7M135 7MPV6274 8M824 7MPV6189 7M4048 8M612
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