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1974127-1 TE Connectivity (1974127-1) CSBS-2/0-500-CPR
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IDCPRM02VPABB FEIG ELECTRONIC GmbH ComS.I.T. 367 - -

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ID CPR.M02 Datasheets Context Search

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2002 - cpr.m02.vp

Abstract: PJMCPRM02 ID CPR.M02 feig RS232-TTL Wiegand rfid SAM module mifare Transponder Philips ID 33 ISO14443-B ISO15693 philips
Text: ® OBID classic-pro MONTAGE INSTALLATION ID CPR.M02 ID CPR.M02.VP/AB-B ID CPR.M02.VP , M21001-3de-ID-B.doc Montage ID CPR.M02 DEUTSCH OBID® classic-pro FEIG ELECTRONIC GmbH Seite 2 von 42 M21001-3de-ID-B.doc Montage ID CPR.M02 DEUTSCH OBID® classic-pro , von 42 M21001-3de-ID-B.doc DEUTSCH OBID® classic-pro Montage ID CPR.M02 Hinweis , FEIG ELECTRONIC GmbH Seite 4 von 42 M21001-3de-ID-B.doc Montage ID CPR.M02 Inhalt 1


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PDF M21001-3de-ID-B D-35781 ISO14443-A ISO14443-B ISO15693 LRI512) cpr.m02.vp PJMCPRM02 ID CPR.M02 feig RS232-TTL Wiegand rfid SAM module mifare Transponder Philips ID 33 ISO15693 philips
Bl1800

Abstract: TN229 Rabbit BL2100 OP67
Text: placement of the System ID block and/or User block areas with any board type (Rabbit or custom) that has a version 3 or 4 System ID block. The System ID block is a reserved area in the top of flash memory that contains important information such as product ID , and on some Ethernet-enabled boards, media access , are most concerned with here is the product ID , the MAC address and calibration constants. The only difference between a version 3 or 4 ID block and earlier versions is that writeUserBlock() mirrors the


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PDF TN229 BL21xx \SAMPLES\BL2100\ADC\AD \SAMPLES\BL2100\DAC\DACAL Bl1800 TN229 Rabbit BL2100 OP67
2006 - 70306

Abstract: MCH6615 IT0251
Text: Gate-to-Source Voltage VGSS ±10 ±10 V ID 0.65 -0.4 A Drain Current (DC) Drain , IGSS ID =1mA, VGS=0V VDS=30V, VGS=0V 30 V 1 ±10 VGS=±8V, VDS=0V VDS=10V, ID =100µA 0.4 VDS=10V, ID =150mA 400 µA µA Forward Transfer Admittance VGS(off) yfs 1.3 RDS(on)1 RDS(on)2 ID =150mA, VGS=4V ID =80mA, VGS=2.5V 0.9 1.2 Static Drain-to-Source On-State Resistance 1.2 1.7 ID =10mA, VGS=1.5V VDS=10V, f=1MHz 2.6 5.2 Input Capacitance RDS


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PDF MCH6615 EN6796A MCH6615 70306 IT0251
2006 - Not Available

Abstract: No abstract text available
Text: Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10µs, duty cycle1% Mounted on a ceramic board (900mm2!0.8mm , Capacitance V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss ID =1mA, VGS=0V VDS=30V, VGS=0V VGS=±8V, VDS=0V VDS=10V, ID =100µA VDS=10V, ID =80mA ID =80mA, VGS=4V ID =40mA, VGS=2.5V ID , (off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID =-1mA, VGS=0V VDS=-30V, VGS=0V VGS=±8V, VDS=0V VDS=-10V, ID =-100µA VDS=-10V, ID =-50mA ID =-50mA, VGS=-4V ID


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PDF EN6920A MCH6613 MCH6613 900mm2
2007 - VEC2603

Abstract: No abstract text available
Text: Current (Pulse) Allowable Power Dissipation ID IDP PD PW10µs, duty cycle1% Mounted on a ceramic , Marking : BF V(BR)DSS IDSS IGSS VGS(off) yfs ID =1mA, VGS=0V VDS=30V, VGS=0V 30 V 1 ±10 VGS=±8V, VDS=0V VDS=10V, ID =100µA 0.4 VDS=10V, ID =80mA 0.15 µA µA 1.3 0.22 V S , . Ratings Parameter Symbol RDS(on)1 RDS(on)2 ID =80mA, VGS=4V 2.9 3.7 Static Drain-to-Source On-State Resistance ID =40mA, VGS=2.5V 3.7 5.2 ID =10mA, VGS=1.5V 6.4 12.8


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PDF VEC2603 ENA0934 A0934-6/6 VEC2603
Not Available

Abstract: No abstract text available
Text: 15-9 PAL® Series 2 0 AP w ith Program m able Output Polarity PA L10 P8 A ID ID ID ID ID ID ID ID ID ID E Z E E E E E P A L12 P 6 A AND OR BATE ARRAY E E EE E E E E E E E E E E P A L14P 4A 2] 0 ID ID ID ID ID ID ID ID ID 15-10 AND OR GATE ARRAY 2I Ô 2] 0 ID ID ID ID ID ID 3D ID ID E E E E E E E E , ) GATE ARRAY ID ID - PA L16 C 1A P A L16 P2A E E E E E E E E E E E E E E


OCR Scan
PDF PAL10P8A 10-input PAL12P6A 12-input PAL14P4A 14-input PAL16P2A 16-input PAL16C1A
2009 - FCP11N60

Abstract: AN-9068 FCP11N60 Equivalent FCP11N60N FCPF11N60NT FCP22N60N FCP20N60 FCPF9N60NT FCP13N60N FCP9N60N
Text: Guidelines Rg at 1/2 of Id FCP9N60N FCP11N60N FCP13N60N FCP16N60N FCP22N60N Rg at rated Id , Typical Performance Characteristics 1/2 of Id Id 200 130 w/ SiC w/ Deuxpeed w/ Stealth2 , 30 40 50 60 70 0 10 20 Rg [Ohm] 30 Figure 1. FCP22N60N dv/dt at Half ID 50 60 70 Figure 2. FCP22N60N dv/dt at Rated ID 1/2 of Id Id 120 200 w/ SiC w , ] Figure 3. FCP16N60N dv/dt at Half ID Figure 4. FCP16N60N dv/dt at Rated ID 1/2 of Id Id 100


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PDF AN-9068 FCP11N60 AN-9068 FCP11N60 Equivalent FCP11N60N FCPF11N60NT FCP22N60N FCP20N60 FCPF9N60NT FCP13N60N FCP9N60N
2001 - IT0251

Abstract: MCH6615
Text: Unit Drain-to-Source Voltage VDSS 30 -30 V Gate-to-Source Voltage VGSS ID ±10 , Gate-to-Source Leakage Current V(BR)DSS IDSS IGSS ID =1mA, VGS=0 VDS=30V, VGS=0 30 V 10 ±10 VGS=±8V, VDS=0 Cutoff Voltage VGS(off) VDS=10V, ID =100µA 0.4 Forward Transfer Admittance yfs RDS(on)1 VDS=10V, ID =150mA 400 Static Drain-to-Source On-State Resistance RDS , 1.2 ID =150mA, VGS=4V ID =80mA, VGS=2.5V ID =10mA, VGS=1.5V 5.2 Continued on next page


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PDF ENN6796 MCH6615 MCH6615 MCH6615] IT0251
2006 - MCH6613

Abstract: PG 014 69-206
Text: Gate-to-Source Voltage VGSS ±10 ±10 V ID 0.35 -0.2 A Drain Current (DC) Drain , IGSS ID =1mA, VGS=0V VDS=30V, VGS=0V 30 V 1 ±10 VGS=±8V, VDS=0V VDS=10V, ID =100µA 0.4 VDS=10V, ID =80mA 150 µA µA Forward Transfer Admittance VGS(off) yfs 1.3 RDS(on)1 RDS(on)2 ID =80mA, VGS=4V ID =40mA, VGS=2.5V 2.9 3.7 Static Drain-to-Source On-State Resistance 3.7 5.2 ID =10mA, VGS=1.5V VDS=10V, f=1MHz 6.4 12.8 Input Capacitance RDS


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PDF MCH6613 EN6920A MCH6613 PG 014 69-206
2007 - VEC2601

Abstract: A0933
Text: Current (Pulse) Allowable Power Dissipation ID IDP PD PW10µs, duty cycle1% Mounted on a ceramic , Marking : BD V(BR)DSS IDSS IGSS VGS(off) yfs ID =1mA, VGS=0V VDS=30V, VGS=0V 30 V 1 ±10 VGS=±8V, VDS=0V VDS=10V, ID =100µA 0.4 VDS=10V, ID =80mA 0.15 µA µA 1.3 0.22 V S , . Ratings Parameter Symbol RDS(on)1 RDS(on)2 ID =80mA, VGS=4V 2.9 3.7 Static Drain-to-Source On-State Resistance ID =40mA, VGS=2.5V 3.7 5.2 ID =10mA, VGS=1.5V 6.4 12.8


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PDF VEC2601 ENA0933 A0933-6/6 VEC2601 A0933
2004 - MCH6631

Abstract: No abstract text available
Text: Voltage VDSS 30 -12 Gate-to-Source Voltage VGSS ID ±10 ±10 V 0.35 -1.5 , IDSS IGSS ID =1mA, VGS=0 VDS=30V, VGS=0 30 V 10 ±10 VGS=±8V, VDS=0 Cutoff Voltage VGS(off) VDS=10V, ID =100µA 0.4 Forward Transfer Admittance yfs RDS(on)1 VDS=10V, ID , 2.9 5.2 6.4 Marking : WF 3.7 3.7 ID =80mA, VGS=4V ID =40mA, VGS=2.5V ID , Qg See specified Test Circuit. 120 ns VDS=10V, VGS=10V, ID =150mA 1.58 nC


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PDF ENN7444 MCH6631 MCH6631] MCH6631
2009 - 74AC11239

Abstract: 45388
Text: (CatalogSummary (Version 1) (:page-props ( ID 1828640344) (:pagenum-stream "page") (:header-footers ( ID , ") (:table "Cnv" ( ID 1700819847) (:cmpn "Cnv:cell") (:table "6x6" ( ID 1730215127) (:cmpn "Table:center") (:cmpn "Table:right") (:cmpn "Table:cell") (:table "Cnv-1" ( ID 1230167736) (:cmpn "Cnv-1:cell") (:pagenum-stream "page" ( ID 1258333693) (:graphic "Page:Product:data" ( ID 1994267459) (:cmpn "Page:Product:data") (:frame "package\ info" ( ID 1962308449) :none-effective) (:frame "features" ( ID 1864344864


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PDF fffff04740366004b004b00050001000000000074 74AC11239 45388
2006 - Not Available

Abstract: No abstract text available
Text: Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10µs, duty cycle1% Mounted on a ceramic board (900mm2!0.8mm , )DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 ID =1mA, VGS=0V VDS=30V, VGS=0V VGS=8V, VDS=0V VDS=10V, ID =100µA VDS=10V, ID =350mA ID =350mA, VGS=4V ID =200mA, VGS=2.5V ID =10mA, VGS=1.5V 30 1 1 0.4 , Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID =-1mA, VGS=0V VDS=-30V, VGS=0V VGS=-8V, VDS=0V VDS=-10V, ID =-100µA VDS=-10V, ID =-200mA ID =-200mA, VGS=-4V ID =-100mA, VGS=-2.5V ID =-10mA, VGS=-1.5V VDS


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PDF EN8229A MCH6634 MCH6634
2001 - TA-3264

Abstract: ENN6973
Text: P-channel Unit Drain-to-Source Voltage VDSS 30 -50 Gate-to-Source Voltage VGSS ID , Drain Current Gate-to-Source Leakage Current V(BR)DSS IDSS IGSS ID =1mA, VGS=0 VDS=30V, VGS=0 30 V 10 ±10 VGS=±8V, VDS=0 Cutoff Voltage VGS(off) VDS=10V, ID =100µA 0.4 Forward Transfer Admittance yfs RDS(on)1 VDS=10V, ID =80mA 150 Static Drain-to-Source On-State , 3.7 3.7 ID =80mA, VGS=4V ID =40mA, VGS=2.5V ID =10mA, VGS=1.5V 12.8 Continued on next


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PDF ENN6973 MCH6618 MCH6618] MCH6618 TA-3264 ENN6973
2010 - Not Available

Abstract: No abstract text available
Text: Voltage VGSS ±20 ±20 V Drain Current (DC) ID 10 -8 A Drain Current (PW≤10s) ID Duty cycle≤1% 11.5 -9 A Drain Current (PW≤100ms) ID Duty cycleâ , Unit max [N-channel] Drain-to-Source Breakdown Voltage V(BR)DSS IDSS ID =1mA, VGS=0V VDS=30V, VGS=0V IGSS VGS(off) | yfs | VGS=±16V, VDS=0V VDS=10V, ID =1mA VDS=10V, ID =10A 5.2 RDS(on)1 ID =10A, VGS=10V 13 17 mΩ RDS(on)2 ID =5A, VGS=4.5V 21 30 mΩ RDS


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PDF FW907 ENA1810 100ms) A1810-6/6
2010 - W906

Abstract: FW906
Text: ) ID ID ID Duty cycle1% 20 -15 A Drain Current (PW10s) IDP Duty cycle1% 52 , ID =1mA, VGS=0V VDS=30V, VGS=0V IGSS VGS(off) | yfs | VGS=±16V, VDS=0V VDS=10V, ID =1mA VDS=10V, ID =8A 4.5 RDS(on)1 ID =8A, VGS=10V 18 24 m RDS(on)2 ID =4A, VGS=4.5V 29 41 m RDS(on)3 ID =4A, VGS=4V 39 55 m Input Capacitance Ciss 690 pF , Circuit. 26 ns VDS=15V, VGS=10V, ID =8A 12 nC VDS=15V, VGS=10V, ID =8A VDS=15V, VGS


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PDF FW906 ENA1809 PW100ms) PW10s) A1809-6/6 W906 FW906
1994 - PO403

Abstract: CTP01 ISA07 CTP04 BCT04 CTB04 BCT02 LIN06 CTP06 DTM03
Text: point required to be transmitted when fractional values are present) ID = Field contains a code value , services in the form of a catalog. SEG. ID NAME ISA GS ST BCT Interchange Control Header , 200 M O O O 1 25 200 1 700,000 O M M M M 1 1 1 1 1 25 LOOP ID - N1 N1 Name LOOP ID - LIN LIN CTB PID PO4 Item Identification Detail Restrictions/Conditions Product/Item Description Item Physical Details LOOP ID - CTP CTP CTT SE GE IEA


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PDF IEA01 IEA02 PO403 CTP01 ISA07 CTP04 BCT04 CTB04 BCT02 LIN06 CTP06 DTM03
2006 - Not Available

Abstract: No abstract text available
Text: ±10 V ID 0.35 -0.4 A Drain Current (DC) Drain Current (Pulse) IDP PD Allowable , Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage V(BR)DSS IDSS IGSS ID =1mA, VGS=0V VDS=30V, VGS=0V 30 V 1 ±10 VGS=±8V, VDS=0V VDS=10V, ID=100µA 0.4 VDS=10V, ID =80mA 150 µA µA Forward Transfer Admittance VGS(off) yfs RDS(on)1 RDS(on)2 ID =80mA, VGS=4V ID =40mA, VGS=2.5V 2.9 3.7 Ω Static Drain-to-Source On-State Resistance


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PDF MCH6614 EN6795A MCH6614
2006 - CPH6619

Abstract: No abstract text available
Text: -2 A 1.6 -8 Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation ID , V(BR)DSS IDSS IGSS ID =1mA, VGS=0V VDS=30V, VGS=0V 30 V 1 ±10 VGS=±8V, VDS=0V VDS=10V, ID =100µA VDS=10V, ID =80mA 0.13 µA 1.3 0.4 µA V 3.7 Forward Transfer Admittance VGS(off) yfs ID =80mA, VGS=4V ID =40mA, VGS=2.5V 2.9 Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 3.7 5.2 ID =10mA, VGS=1.5V VDS=10V, f=1MHz 6.4 12.8 Input


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PDF CPH6619 ENA0473 A0473-7/7 CPH6619
2006 - AN2980

Abstract: IN28F640J3 FF000000 FF800000 MPC8260ADS MPC8560ADS
Text: devices display their manufacturer and device ID codes. If the devices can do this, then basic reads and , flash device to display its manufacturer and device ID codes: · The manufacturer ID code is the same , Intel. · Device ID codes are unique for each device; each device's data sheet specifies its ID code. Reading these ID codes requires successful write and read cycles to each flash device. This , in the target hardware. By the same measure, failing to read these ID codes, using the methods of


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PDF AN2980 AN2980 IN28F640J3 FF000000 FF800000 MPC8260ADS MPC8560ADS
2005 - MCH6634

Abstract: No abstract text available
Text: N-channel P-channel Unit VDSS VGSS Drain Current (DC) -30 10 -10 V ID , )DSS IDSS ID =1mA, VGS=0 IGSS VGS(off) 30 VGS=8V, VDS=0 1 µA V 0.7 0.9 ID =200mA, VGS=2.5V 0.8 1.15 ID =10mA, VGS=1.5V 1.6 2.4 0.4 VDS=10V, ID =350mA 0.45 RDS(on)1 RDS(on)2 ID =350mA, VGS=4V RDS(on)3 Static Drain-to-Source On-State Resistance µA 1.3 VDS=10V, ID =100µA yfs Forward Transfer Admittance V 1 VDS=30V, VGS


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PDF MCH6634 ENN8229 MCH6634
2006 - MCH6618

Abstract: No abstract text available
Text: Gate-to-Source Voltage VGSS ±10 ±20 V ID 0.35 -0.14 A Drain Current (DC) Drain , IGSS ID =1mA, VGS=0V VDS=30V, VGS=0V 30 V 1 ±10 VGS=±8V, VDS=0V VDS=10V, ID =100µA 0.4 VDS=10V, ID =80mA 150 µA µA Forward Transfer Admittance VGS(off) yfs 1.3 RDS(on)1 RDS(on)2 ID =80mA, VGS=4V ID =40mA, VGS=2.5V 2.9 3.7 Static Drain-to-Source On-State Resistance 3.7 5.2 ID =10mA, VGS=1.5V VDS=10V, f=1MHz 6.4 12.8 Input Capacitance RDS


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PDF MCH6618 EN6973A 900mm2 MCH6618
2006 - Not Available

Abstract: No abstract text available
Text: Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10µs, duty cycle1% Mounted on a ceramic board (900mm2!0.8mm , ) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf ID =1mA, VGS=0V VDS=30V, VGS=0V VGS=±8V, VDS=0V VDS=10V, ID =100µA VDS=10V, ID =80mA ID =80mA, VGS=4V ID =40mA, VGS=2.5V ID =10mA, VGS=1.5V VDS , td(off) tf Qg Qgs Qgd VSD ID =-1mA, VGS=0V VDS=-50V, VGS=0V VGS=±16V, VDS=0V VDS=-10V, ID =-100µA VDS=-10V, ID =-40mA ID =-40mA, VGS=-10V ID =-20mA, VGS=-4V VDS=-10V, f=1MHz VDS=-10V, f=1MHz VDS


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PDF EN6973A MCH6618 900mm2
2004 - MCH6628

Abstract: No abstract text available
Text: Voltage VDSS 30 -20 V Gate-to-Source Voltage VGSS ID ±10 ±10 V Drain , Drain-to-Source On-State Resistance RDS(on)2 RDS(on)3 ID =1mA, VGS=0 VDS=30V, VGS=0 30 V 10 ±10 VGS=±8V, VDS=0 VDS=10V, ID =100µA 0.4 VDS=10V, ID =80mA 130 µA µA 1.3 220 V mS 2.9 5.2 6.4 Marking : WC 3.7 3.7 ID =80mA, VGS=4V ID =40mA, VGS=2.5V ID , specified Test Circuit. 120 ns Total Gate Charge tf Qg VDS=10V, VGS=4V, ID =150mA 1.58


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PDF ENN7919 MCH6628 MCH6628] MCH6628
2006 - MCH6634

Abstract: No abstract text available
Text: Gate-to-Source Voltage (*1) VGSS 10 -10 V ID 0.7 -0.4 A Drain Current (DC) Drain , Leakage Current Cutoff Voltage V(BR)DSS IDSS IGSS ID =1mA, VGS=0V VDS=30V, VGS=0V 30 V 1 µA 1 VGS=8V, VDS=0V VDS=10V, ID =100µA VDS=10V, ID =350mA 0.45 µA 1.3 0.4 V Forward Transfer Admittance VGS(off) yfs ID =350mA, VGS=4V ID =200mA, VGS=2.5V 0.7 0.9 Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 0.8 1.15 RDS(on)3 ID


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PDF MCH6634 EN8229A MCH6634
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