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Part Manufacturer Description Datasheet Download Buy Part
AC244027 Microchip Technology Inc EXTENSION PAK PIC16LF727-ICE
AC244026 Microchip Technology Inc EXTENSION PAK PIC16F727-ICE
AC244046 Microchip Technology Inc KIT PIC16F1847-ICE EXTENSION
AC244048 Microchip Technology Inc KIT PIC16LF1907-ICE EXTENSION
AC244053 Microchip Technology Inc EXTENSION PAK PIC16F1459-ICE
AC244047 Microchip Technology Inc KIT PIC16LF1847-ICE EXTENSION

ICE-80 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1999 - Not Available

Abstract: No abstract text available
Text: ­25 to + 80 ­30 to +100 Unit V V mA mW °C °C 1: Emitter 2: Collector Electro-Optical , ICE(L) (mA) PC = 100mW 24 10 2 Collector power dissipation 80 Collector photo current , 40 1 20 0 ­ 20 0 20 40 60 80 100 0 10 ­1 1 10 10 2 10 3 , sensitivity 0 20 40 60 80 100 1 S (%) 10 ­2 10 ­3 ­ 20 80 60 Dark current 40 10 ­1 20 10 ­2 ­ 40 0 40 80 120 0 200 400 600 800 1000 1200 Ambient


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PDF PNA2603L
1999 - Not Available

Abstract: No abstract text available
Text: temperature Symbol VCEO VECO IC PC Topr Tstg Ratings 20 5 30 100 ­25 to + 80 ­30 to +100 Unit V V mA mW °C °C , 4 2 lx 1 lx 0 4 8 12 16 20 24 100 10 2 Collector power dissipation 80 Collector photo current Collector photo current 60 10 40 1 20 0 ­ 20 0 20 40 60 80 , (µA) Collector photo current 10 ­1 10 ­1 Relative sensitivity 0 20 40 60 80 100 1 1 S (%) 10 ­2 10 ­3 ­ 20 80 60 Dark current 40 10 ­2 20 10 ­3 ­ 20 0 20


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PDF PNZ202S
1999 - PNA2602

Abstract: No abstract text available
Text: voltage VECO 5 V Collector current IC 30 PC 100 Topr ­25 to + 80 °C , 60 80 L = 30 lx 16 20 lx 10 lx 8 5 lx 0 100 Ta (°C ) 0 4 8 12 16 , 25°C Dark current S (%) 80 1 60 Relative sensitivity ICEO (µA) 10 10 ­1 40 10 ­2 0 40 Ambient temperature 80 20 10 ­3 ­ 20 120 Ta (°C ) 0 10° 20 40 60 Ambient temperature 80 0 200 100 400 20° 600 800


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PDF PNA2602 PNA2602
1999 - Not Available

Abstract: No abstract text available
Text: ) 16 L =250 lx 12 Collector power dissipation 80 Collector photo current Collector photo current 60 1 8 100 lx 4 50 lx 10 lx 40 10 ­1 20 0 ­ 20 0 20 40 60 80 , sensitivity 80 120 80 Dark current 1 Collector photo current 60 40 1 10 ­1 20 10 ­2 ­ 20 0 20 40 60 80 100 10 ­1 ­ 40 0 40 0 200 400 600 800 , ) Directivity characteristics 0° 100 90 80 70 60 50 40 30 20 10° 20° 10 3 tr - ICE(L) VCC = 10V Ta = 25


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PDF PNZ0115
2005 - FGW15N40

Abstract: 15N40 TSSOP8 IGBT FLASH
Text: - 1.1 - µs - 80 - °C/W Thermal Characteristics RJA Thermal Resistance , 100 80 Waveforms in descending order 60 VGE = 6.0V 40 VGE = 5.0V VGE = 4.0V 20 , 100µs 120 100 80 Waveforms in descending order 60 VGE = 6.0V 40 VGE = 5.0V VGE = 4.0V , 100 80 Waveforms in descending order VGE = 6.0V 40 VGE = 5.0V VGE = 4.0V 20 VGE = 3.5V 0 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 100 80 Waveforms in descending


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PDF FGW15N40 FGW15N40 15N40 TSSOP8 IGBT FLASH
2002 - TQFP 80 socket

Abstract: 68 pin plcc socket view bottom tqfp 64 socket 44 pin plcc microchip programming socket plcc socket 64 PLCC tqfp 32 socket DS51194F-page PLCC 44 socket layout PIC microcontroller 3 phase Microchip Product Line Card
Text: ­ 8-, 14-, 18-, 20- and 28-lead · SSOP ­ 20- and 28-lead · QFP ­ 44-, 64- and 80 -lead · PLCC - 68 , XLT80PT PIC18C801 - 80 pin TQFP PIC18F8620 - 80 pin TQFP PIC18F8720 - 80 pin TQFP XLT68L1 , / 80 -lead Transition Socket ­ Top View .31 64/ 80 -lead Transition Socket ­ Side View , : One 64-lead MQFP/TQFP transition socket, PIC17CXXX · XLT80PT: One 80 -lead MQFP/TQFP transition , touching the soldering tip to the lead tip. Remember the 64- and 80 -pin TQFP headers are very delicate


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PDF QS-9000 QS-9000 DS51194F* TQFP 80 socket 68 pin plcc socket view bottom tqfp 64 socket 44 pin plcc microchip programming socket plcc socket 64 PLCC tqfp 32 socket DS51194F-page PLCC 44 socket layout PIC microcontroller 3 phase Microchip Product Line Card
1999 - Not Available

Abstract: No abstract text available
Text: ) 8 10 2 Collector power dissipation 80 Collector photo current 60 Collector photo current 10 1 40 20 10 ­1 0 ­ 20 0 20 40 60 80 100 0 0 4 8 , VCE = 10V Ta = 25°C ICEO (µA) 1 10 S (%) Relative sensitivity 0 40 80 120 80 Dark , 20 40 60 80 100 10 ­1 ­ 40 0 200 400 600 800 1000 1200 Ambient , 0° 100 80 60 40 20 10° 20° 30° 40° 10 3 tr - ICE(L) VCC = 10V Ta = 25°C 10 3 tf - ICE(L


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PDF PNA1605F 30urrent
1999 - Not Available

Abstract: No abstract text available
Text: ICE(L) (mA) PC = 100mW 24 10 2 Collector power dissipation 80 Collector photo current , 0 20 40 60 80 100 0 0 4 8 12 16 20 24 10 ­1 1 10 , photo current Relative sensitivity 0 40 80 120 1 S (%) 80 60 Dark current 40 1 10 ­2 20 10 ­3 ­ 20 0 20 40 60 80 100 10 ­1 ­ 40 0 200 400 600 , ) Wavelength (nm) Directivity characteristics 0° 100 90 80 70 60 50 40 30 20 10° 20° 10 5 tr - ICE(L


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PDF PNA2W01M
1999 - ICE 10501

Abstract: No abstract text available
Text: ) - VCE 60 40 20 ICE(L) (mA) 80 PC = 100mW 24 Collector photo current ICE(L) (mA) 100 L = 10 lx 16 5 lx 8 10 2 10 1 2 lx 1 lx 20 40 60 80 0 , Collector photo current 1 10 ­1 10 ­2 20 40 Ambient temperature 60 80 S (%) 1 Ta (°C ) 50 40 30 20 40 80 40 0 200 120 10 5 30° 40° 50° 60° 70 , time 70 Relative sensitivity S (%) 90 0 Ambient temperature 100 80 80 tf (µs


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PDF PNA2W01 2856K ICE 10501
1999 - PNA1801

Abstract: No abstract text available
Text: 80 60 40 20 20 40 60 80 L = 2000 lx 1250 lx 1000 lx 8 750 lx 500 lx , ICE(L) (mA) Collector photo current 10 1 40 1 10 ­1 10 ­2 24 80 1 L = 1000 lx 500 lx 1 0 40 80 VCE = 10V Ta = 25°C 80 60 40 0 200 120 , 10 2 RL = 1k 10 500 10 2 RL = 1k 10 500 100 70° 80 ° 800 10 4 tf (µs , Ta = 25°C 10 4 Relative sensitivity S (%) 90 80 10 4 20 10 ­1 ­ 40 120 10 3


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PDF PNA1801 2856K PNA1801
2008 - transistor D 5032

Abstract: 12 H 595 IRGPS60B120KD IGBT 900v 60a igbt 60a A1508 IGBT 1200V 60A IRFPS37N50A Ir 900v 60a 120A8
Text: CT4,WF3 IRGPS60B120KD 140 700 LIMITED BY PACKAGE 600 100 500 80 P tot (W) IC (A) 120 60 40 400 300 200 20 100 0 0 20 40 60 80 0 100 120 , IRGPS60B120KD 120 120 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 100 80 ICE (A) ICE (A) 80 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 100 60 60 40 40 , 80 IF (A) 80 ICE (A) 3 VCE (V) 60 60 40 40 20 20 0 0 0 1 2 3


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PDF 94239B IRGPS60B120KD Super-247 Super-247TM IRFPS37N50A transistor D 5032 12 H 595 IRGPS60B120KD IGBT 900v 60a igbt 60a A1508 IGBT 1200V 60A IRFPS37N50A Ir 900v 60a 120A8
1999 - PNA2083M

Abstract: PNA2803M
Text: Operating ambient temperature Topr ­25 to + 80 °C Storage temperature Tstg ­30 to +100 , PC - Ta ICE(L) - VCE 60 40 20 0 20 40 Ambient temperature 60 80 20 , ) Spectral sensitivity characteristics 100 VCE = 10V 80 S (%) 10 1 10 ­1 VCE = 10V Ta = 25°C 60 40 20 Ambient temperature 80 10 ­2 ­ 20 120 Ta (°C ) 0 10° 40 30 20 , , 50 Sig. OUT RL 40° 50° 60° 70° tr (µs) 60 80 0 600


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PDF PNA2803M 2856K PNA2083M PNA2803M
1999 - Not Available

Abstract: No abstract text available
Text: temperature Symbol VCEO VECO IC PC Topr Tstg Ratings 20 5 30 100 ­25 to + 80 ­30 to +100 Unit V V mA mW °C °C , 4 2 lx 1 lx 0 4 8 12 16 20 24 100 10 2 Collector power dissipation 80 Collector photo current Collector photo current 60 10 40 1 20 0 ­ 20 0 20 40 60 80 , (µA) Collector photo current 10 ­1 10 ­1 Relative sensitivity 0 20 40 60 80 100 1 1 S (%) 10 ­2 10 ­3 ­ 20 80 60 Dark current 40 10 ­2 20 10 ­3 ­ 20 0 20


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PDF PNZ0202
1999 - PNZ1270

Abstract: No abstract text available
Text: 30 20 10 0 ­ 20 0 20 40 Ambient temperature 60 80 L =1000 lx 4 3 , Ambient temperature 10 2 10 10 24 80 S (%) 10 3 0 40 80 Ambient temperature VCE = 10V Ta = 25°C 80 60 40 0 200 120 10 2 600 800 1000 1200 tf - , 50 10 tr (µs) 60 30° Rise time 70 Relative sensitivity S (%) 90 80 500 100 1 10 ­1 80 ° 90° 10 ­2 10 ­2 10 ­1 Collector photo current 2 1 10 ICE


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PDF PNZ1270 2856K PNZ1270
1999 - PNZ0158

Abstract: No abstract text available
Text: ) - VCE 80 60 40 20 0 ­ 20 0 20 40 Ambient temperature 60 80 L = , = 2856K 1 VCE (V) ICEO - Ta 10 ICE(L) (mA) 10 ­2 VCE = 10V Ta = 25°C 80 60 40 20 0 40 Ambient temperature 80 10 ­3 ­ 40 120 Ta (°C ) 10° 50 , 200 120 VCC = 10V Ta = 25°C 10 3 Relative sensitivity S (%) 90 80 tr - ICE(L) 20° 100 80 40 Ambient temperature Directivity characteristics 0° 0 10 2 RL =


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PDF PNZ0158 2856K PNZ0158
1999 - Not Available

Abstract: No abstract text available
Text: Phototransistors PNA1605 ICE(L) - VCE 10 80 60 40 20 Ta = 25°C T = 2856K 900 lx 800 , 1 10 ­1 100 lx 20 40 60 Ambient temperature 80 0 100 Ta (°C ) 0 4 8 12 ICEO - Ta 10 ­1 10 ­2 10 ­3 40 60 Ambient temperature 80 S (%) 1 10° Ta (°C ) 40 80 60 40 400 600 800 1000 1200 Wavelength (nm) Ta (°C ) tf - ICE(L) VCC = 10V Ta = 25°C 10 3 50° 10 2 60° 70° 80 ° 90° 10 2 RL


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PDF PNA1605 2856K
2005 - 15N40A

Abstract: FGW15N40A
Text: tfI Current Fall Time - 1.1 - µs - 80 - °C/W Thermal Characteristics , PULSE DURATION = 100µs 140 120 100 80 Waveforms in descending order 60 VGE = 6.0V 40 , °C PULSE DURATION = 100µs 140 120 100 80 Waveforms in descending order 60 VGE = 6.0V 40 , DURATION = 100µs 120 100 80 Waveforms in descending order VGE = 6.0V 40 VGE = 5.0V VGE = 4.0V 20 VGE = 3.5V 0 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 100 80 Waveforms


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PDF FGW15N40A FGW15N40A 15N40A
1999 - PNZ108CL

Abstract: 201 photo DSA003716
Text: 900 nm Measured from the optical axis to the half power point 80 deg. 5 µs tr*2 , VCE 80 60 40 20 Ta = 25°C T = 2856K 16 1000 lx 12 750 lx 8 500 lx 4 250 lx 20 40 60 80 0 100 Ta (°C ) 0 4 8 10 1 10 ­1 1 10 ­1 20 40 60 Ambient temperature 80 S (%) 1 20 40 80 60 40 0 , 60° 70° 80 ° 90° 10 3 10 2 RL = 1k 500 10 10 2 RL = 1k 500 10 100 100 1


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PDF PNZ108CL 2856K PNZ108CL 201 photo DSA003716
Phototransistor* choe

Abstract: 27TI PN205 PN207
Text: 100 mW mmm&m T0pr -25-+ 80 °C Tsig -30-+ 100 "C 2-0.45-+ 0.15 2.3 1.9 0.45+0.15 2.54 1.75R , I^^/WX ' PN205 120 100 s E «s ^ 40 Pc-Ta S -20 0 20 40 60 80 100 WMÍÜI4" Ta CC) 28 24 , =2856'K Á 1 10 100 sa & L (ix) IcEo-Ta I 1 0 20 40 60 80 100 RM ¡¡¿IK Ta CC) IcE(L)—Ta 0 40 80 , 09905 0 7T7KEL/C7hD -^Q^IUTs _PN 207 ICE(L)—L S J 80 cC 60 a 80 100 MHKiüiS: Ta CC) 32 28 24 ? S- 20 P 16 IcE(L) — VcE - 1 i Ta=25*C T


OCR Scan
PDF PN205 PN205 Phototransistor* choe 27TI PN207
Not Available

Abstract: No abstract text available
Text: and Storage Temperature Range Soldering Temperature, for 10 sec. Max. Units 1200 80 40 160 160 80 40 160 ± 20 595 238 -55 to +150 V A V W ° C 300 (0.063 in. (1.6mm , 600 80 500 IC (A) Ptot (W) 60 40 400 300 200 20 100 0 0 0 20 40 60 80 0 100 120 140 160 50 Fig. 1 - Maximum DC Collector Current vs. Case Temperature , =15V C; 3 IRGPS40B120UDP 80 80 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 60


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PDF IRGPS40B120UDP Super-247 Super-247â IRFPS37N50A
2005 - FGR15N40A

Abstract: 15N40A OC73
Text: Current Fall Time - 1.1 - µs - 80 - °C/W Thermal Characteristics RJA , DURATION = 100µs 140 120 100 80 Waveforms in descending order 60 VGE = 6.0V 40 VGE = , DURATION = 100µs 140 120 100 80 Waveforms in descending order 60 VGE = 6.0V 40 VGE = , DURATION = 100µs 120 100 80 Waveforms in descending order VGE = 6.0V 40 VGE = 5.0V VGE = 4.0V , 80 Waveforms in descending order 60 VGE = 6.0V 40 VGE = 5.0V VGE = 4.0V 20 VGE =


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PDF FGR15N40A 200et FGR15N40A 15N40A OC73
2005 - Not Available

Abstract: No abstract text available
Text: Resistance Junction-Case SuperSOT - 8 (NOTE 2) 80 °C/W Notes: 1. Pulse Duration = 100µsec 2. Mounted on a 1 , Logic Level IGBT Typical Characteristics 140 120 100 80 60 40 20 0 1 1.5 2 2.5 3 3.5 4 4.5 5 , ICE, ICOLLECTOR TO EMITTER CURRENT (A) ICE, ICOLLECTOR TO EMITTER CURRENT (A) 160 160 140 120 100 80 , , ICOLLECTOR TO EMITTER CURRENT (A) 160 140 120 100 80 60 40 20 0 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 Waveforms in , 120 100 80 60 40 20 0 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 Waveforms in descending order VGE = 6.0V VGE =


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PDF FGR15N40
IGBT 1200V 60A

Abstract: No abstract text available
Text: ,18,19 20, 21 CT4,WF3 IRGPS60B120KDP 140 700 LIMITED BY PACKAGE 600 100 500 80 P tot (W) IC (A) 120 60 40 400 300 200 20 100 0 0 20 40 60 80 , 100 80 ICE (A) ICE (A) 80 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 100 , 10V VGE = 8.0V 100 -40° C 25° C 125° C 100 80 IF (A) 80 ICE (A) 3 VCE (V , tdON 100 tF tR 2000 0 0 20 40 60 80 10 100 20 40 60 IC (A


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PDF IRGPS60B120KDP Super-247 Super-247â R37N50A IGBT 1200V 60A
1999 - PNA2603

Abstract: No abstract text available
Text: dissipation PC 100 mW Operating ambient temperature Topr ­25 to + 80 °C Storage , 20 0 20 40 60 80 L = 30 lx 16 20 lx 10 lx 8 5 lx 0 100 Ta (°C ) 0 , characteristics Ta = 25°C Dark current S (%) 80 1 60 Relative sensitivity ICEO (µA) 10 10 ­1 40 10 ­2 0 40 Ambient temperature 80 20 10 ­3 ­ 20 120 Ta (°C ) 0 10° 20 40 60 Ambient temperature 80 0 200 100 400 20° 600 800


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PDF PNA2603 PNA2603
1999 - PNZ109CL

Abstract: No abstract text available
Text: power point 80 deg. Rise time tr*2 VCC = 10V, ICE(L) = 5mA 5 µs Fall time tf , Phototransistors PNZ109CL ICE(L) - VCE 80 60 40 20 Ta = 25°C T = 2856K ICE(L) - L 16 , 60 Ambient temperature 80 0 100 Ta (°C ) 0 4 8 12 ICEO - Ta 10 ­2 40 60 Ambient temperature 80 1 Ta (°C ) 80 60 40 0 600 120 700 , °C 10 4 50° 10 3 60° 70° 80 ° 90° tr (µs) 20 80 VCC = 10V Ta = 25°C 10 4


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PDF PNZ109CL 2856K PNZ109CL
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