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IC03a datasheet (6)

Part ECAD Model Manufacturer Description Type PDF
IC03a 1998 Functional 1 IC03a 1998 Functional 1 ECAD Model Philips Semiconductors Semiconductors for Wired Telecom Systems Functional index Original PDF
IC03a 1998 Index 1 IC03a 1998 Index 1 ECAD Model Philips Semiconductors Semiconductors for Wired Telecom Systems Index Original PDF
IC03a 1998 Preface 1 IC03a 1998 Preface 1 ECAD Model Philips Semiconductors Preface Original PDF
IC03a 1998 Replacement 1 IC03a 1998 Replacement 1 ECAD Model Philips Semiconductors Replacement list Original PDF
IC03a 1999 Replacement 1 IC03a 1999 Replacement 1 ECAD Model Philips Semiconductors Replacement list Original PDF
IC03-ALDG2 IC03-ALDG2 ECAD Model Shanghai Runan Industrial Sensors Inductive Proximity Switch Original PDF

IC03a Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2009 - NPN Transistor 600V TO-220

Abstract: ULB124G ulb124
Text: 400 8 VCE= 5V, IC=0.3A VCE= 5V, IC=0.5A VCE= 5V, IC=1A IC=0.1A, IB=10mA IC=0.3A , IB=30mA IC=0.1A, IB=10mA IC=0.3A , IB=30mA MAX 10 10 IC=1mA IC=10mA IE=1mA VCB=600V VEB=9V, IC=0 TYP SWITCHING CHARACTERISTICS Gain-Bandwidth Product fT VCE=10V, IC=0.3A , f=1MHz Note: Pulse Test : Pulse


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PDF ULB124 ULB124 O-220 ULB124L-xx-TA3-T ULB124G-xx-TA3-T ULB124L-xx-TM3-T ULB124G-xx-TM3-T O-251 QW-R213-013 NPN Transistor 600V TO-220 ULB124G
Not Available

Abstract: No abstract text available
Text: .) tf=1.0ìs (Max.) at IC=0.3A 3 .8 0 Excellent Switching Times 1 Base +0.15 4.60-0.15 2 , =5V, IC=0.3A DC current Gain 10 Collector-Emitter Saturation Voltage VCE(sat) IC=0.3A ,IB=0.06A 0.5 V Base- Emitter Saturation Voltage VBE(sat) IC=0.3A ,IB=0.06A 1.2 V tr 1


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PDF 2SC3405 O-252
2SC3405

Abstract: IC03A
Text: tr=1.0ìs (Max.) tf=1.0ìs (Max.) at IC=0.3A 3 .8 0 Excellent Switching Times 1 Base +0.15 , =5V,IC=1mA 6 VCE=5V, IC=0.3A DC current Gain 10 Collector-Emitter Saturation Voltage VCE(sat) IC=0.3A ,IB=0.06A 0.5 V Base- Emitter Saturation Voltage VBE(sat) IC=0.3A ,IB


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PDF 2SC3405 O-252 2SC3405 IC03A
LB124E

Abstract: Ic 749 lb124
Text: =0.1A, IB=10mA - - 0.8 V IC=0.3A , IB=30mA VBE(sat)1 Base-Emitter Saturation Voltage(1 , =10mA VBE(sat)2 - - 1.2 V IC=0.3A , IB=30mA hFE1 10 - 40 - IC=0.3A , VCE , B5 B6 23~32 28~37 33~40 IC=0.3A , VCE=10V, f=100MHz DC Components


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PDF LB124E O-220AB 100MHz LB124E Ic 749 lb124
2008 - NPN Transistor 600V

Abstract: l13024 NPN Transistor 600V TO-220
Text: 6 UNIT V V V µA µA 600 400 8 VCE= 5V, IC=0.3A VCE= 5V, IC=0.5A VCE= 5V, IC=1A IC=0.1A, IB=10mA IC=0.3A , IB=30mA IC=0.1A, IB=10mA IC=0.3A , IB=30mA MAX 10 10 IC=1mA IC=10mA IE=1mA VCB=600V VEB=9V, IC=0 TYP SWITCHING CHARACTERISTICS Gain-Bandwidth Product fT VCE=10V, IC=0.3A


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PDF L13024 L13024 L13024L L13024G L13024-TA3-T L13024-TM3-T L13024L-TA3-T L13024L-TM3-T L13024G-TA3-T L13024G-TM3-T NPN Transistor 600V NPN Transistor 600V TO-220
2010 - ULB124

Abstract: No abstract text available
Text: CONDITIONS IC=1mA IC=10mA IE=1mA VCB=600V VEB=9V, IC=0 VCE= 5V, IC=0.3A VCE= 5V, IC=0.5A VCE= 5V, IC=1A IC=0.1A, IB=10mA IC=0.3A , IB=30mA IC=0.1A, IB=10mA IC=0.3A , IB=30mA MIN 600 400 8 10 10 10 10 6 40 TYP MAX , Gain-Bandwidth Product fT VCE=10V, IC=0.3A , f=1MHz Note: Pulse Test : Pulse Width380µs, Duty Cycle2


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PDF ULB124 O-126 ULB124 O-220 ULB124L-xx-TA3-T ULB124G-xx-TA3-T ULB124L-xx-TM3-T ULB124G-xx-TM3-T ULB124L-xx-T60-T ULB124G-xx-T60-T
2011 - NPN Transistor 600V

Abstract: No abstract text available
Text: CONDITIONS IC=1mA IC=10mA IE=1mA VCB=600V VEB=9V, IC=0 VCE= 5V, IC=0.3A VCE= 5V, IC=0.5A VCE= 5V, IC=1A IC=0.1A, IB=10mA IC=0.3A , IB=30mA IC=0.1A, IB=10mA IC=0.3A , IB=30mA MIN 600 400 8 10 10 10 10 6 40 TYP MAX , Gain-Bandwidth Product fT VCE=10V, IC=0.3A , f=1MHz Note: Pulse Test : Pulse Width380µs, Duty Cycle2


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PDF ULB124 O-126 ULB124 O-220 ULB124L-xx-TA3-T ULB124G-xx-TA3-T ULB124L-xx-TM3-T ULB124G-xx-TM3-T ULB124L-xx-T60-K ULB124G-xx-T60-K NPN Transistor 600V
1995 - Not Available

Abstract: No abstract text available
Text: collector-emitter voltage High current amplification factor (hFE) hFE=100 to 200 (VCE=5V, IC=0.3A ) The products , 3 20 to 60 (@VCE=5V, IC=0.3A ) TTC008 (*1) 600 285 1.5 100 to 200 (@VCE=5V, IC=0.3A , 375 2 100 to 200 (@VCE=5V, IC=0.3A ) 2SC6142 800 375 1.5 100 to 200 (@VCE=5V, IC


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PDF TTC008, TTC012ï TTC012 TTC008 AC100 AC200 2SC6010
inverter circuit dc to dc 2V to 100V

Abstract: marking 3t1 TOSHIBA FL INVERTER TPC6502
Text: 1000 ( IC=0.3A ) Low collector-emitter saturation voltage : VCE(sat)~0.14V (max) High-speed switching , current gain hFE(1) VCE=2V, IC=0.3A 400 - 1000 hFE(2) VCE=2V,IC=1 A 200 - — Collector-emitter , : hF E ~ 400 to 1000 ( IC=0.3A ) Low collector-emitter saturation voltage : VCE(sat)™ 0.14V (max , breakdown voltage v(br)ceo IC=10mA,IB=0 50 — — V DC current gain hFE(1) VCE=2V, IC=0.3A 400 — 1000


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PDF TPC6502 hFE-400 120ns inverter circuit dc to dc 2V to 100V marking 3t1 TOSHIBA FL INVERTER TPC6502
2SC4793 2sa1837

Abstract: 100 amp npn darlington power transistors 2sC5200, 2SA1943 10 amp npn darlington power transistors 2sC5200, 2SA1943, 2sc5198 2SC4684 datasheets 2sa1930 transistor equivalent 2sc5200 2SB906-Y 2sc3303
Text: @V_CE=10V, I_C=0.1A 70 @V_CE=-10V, I_C=-0.1A 200 @V_CE=5V, I_C=0.3A 200 @V_CE=-10V, I_C=-0.3A 30 , =32mA Transis 1000 @V_CE=2V, I_C=0.1A 400 @V_CE=2V, I_C=0.1A 0.17 @ I_C=0.3A , I_B=6mA Transistors for Pwer Amp 2.5 1000 @V_CE=2V, I_C=0.3A 400 @V_CE=2V, I_C=0.3A 0.14 @I_C=1A, I_B=20mA Transistors for 2 500 , @ I_C=-0.3A , I_B=-10mA Transis 2.5 500 @V_CE=-2V, I_C=-0.3A 200 @V_CE=-2V, I_C=-0.3A -0.2 @I_C=-1A, I_B , , I_B=-53mA 0.625 500 @V_CE=-2V, I_C=-0.3A 200 @V_CE=-2V, I_C=-0.3A -0.2 @I_C=-1A, I_B=-33mA 0.5


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PDF 2SC1627A 2SA817A 2SC2235 2SA965 2SC3665 2SA1425 2SC5174 2SA1932 2SC3423 2SA1360 2SC4793 2sa1837 100 amp npn darlington power transistors 2sC5200, 2SA1943 10 amp npn darlington power transistors 2sC5200, 2SA1943, 2sc5198 2SC4684 datasheets 2sa1930 transistor equivalent 2sc5200 2SB906-Y 2sc3303
2014 - Not Available

Abstract: No abstract text available
Text: UNIT V V V µA µA 600 400 8 VCE= 5V, IC=0.3A VCE= 5V, IC=0.5A VCE= 5V, IC=1A IC=0.1A, IB=10mA IC=0.3A , IB=30mA IC=0.1A, IB=10mA IC=0.3A , IB=30mA TYP MAX 10 10 IC=1mA IC=10mA IE=1mA VCB=600V VEB=9V, IC=0 SWITCHING CHARACTERISTICS Gain-Bandwidth Product fT VCE=10V, IC=0.3A


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PDF ULB124 O-126 ULB124 O-220 ULB124L-xx-TA3-T ULB124G-xx-TA3-T ULB124L-xx-TM3-T ULB124G-xx-TM3-T ULB124L-xx-T60-K ULB124G-xx-T60-K
IC 386

Abstract: LB123T NPN Transistor 600V ic 709
Text: Collector-Emitter Saturation Voltage(1) - - 0.9 V IC=0.3A , IB=30mA VBE(sat)1 - - 1.2 V IC=0.1A, IB=10mA VBE(sat)2 - - 1.8 V IC=0.3A , IB=30mA hFE1 10 - 50 - IC=0.3A , VCE=5V hFE2 10 - - - IC=0.5A, VCE=5V hFE3 Base-Emitter Saturation


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PDF LB123T O-126 IC 386 LB123T NPN Transistor 600V ic 709
lb123d

Abstract: No abstract text available
Text: =10mA VCE(sat)2 - - 0.9 V IC=0.3A , IB=30mA Emitter Cutoff Current Collector-Emitter , Saturation Voltage(1) - - 1.8 V IC=0.3A , IB=30mA hFE1 - 50 - IC=0.3A , VCE


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PDF LB123D O-126ML lb123d
2009 - Not Available

Abstract: No abstract text available
Text: CONDITIONS MIN 10 10 6 UNIT V V V µA µA 600 400 8 VCE= 5V, IC=0.3A VCE= 5V, IC=0.5A VCE= 5V, IC=1A IC=0.1A, IB=10mA IC=0.3A , IB=30mA IC=0.1A, IB=10mA IC=0.3A , IB=30mA MAX 10 , Gain-Bandwidth Product fT VCE=10V, IC=0.3A , f=1MHz Note: Pulse Test : Pulse Width380µs, Duty Cycle2% 40


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PDF ULB124 ULB124 O-220 ULB124G-xx-TA3-T ULB124G-xx-TM3-T O-251 QW-R213-013
2SB628

Abstract: IC03a
Text: =-0.3 A;IB=-30m A -1.0 V VBE Base-emitter voltage IC=-0.3A ; VCE=-4V -1.0 V ICBO , =0 -1 µA hFE DC current gain IC=-0.3A ; VCE=-5V Transition frequency IC=-0.3A ; VCE


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PDF 2SB628 O-220C -120V; 2SB628 IC03a
L486

Abstract: No abstract text available
Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SC3405 INDUSTRIAL APPLICATIONS Unit in mm ae m a x . SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATION. FEATURES : . Excellent Switching Times ( Ic=0.3A ) : tr=l.0,«s(Max. ) , tf=l.0//s(Max. ) . High Collector Breakdown Voltage : VcEO=800V MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage , =0.1A VCE=5V, IC=D.3A IC=0.3A , Iß=0.06A IC=0.3A , Ib =0.06A 20M B Weight : 0.36g MIN. 900 800 12 10 TYP


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PDF 2SC3405 HR81STANCE WIBTK-80/ia L486
NPN Transistor 10A 400V

Abstract: KSC2752 L 10mH TS 4142 KSC2751 400V 10A NPN transistor
Text: =5V, Ic=0.3A 10 •Collector-Emitter Saturation Voltage Vce(sat) Ic=0.3A , Ib=0.06A 1 V * Base-Emitter Saturation Voltage Vbe (sat) < Ic=0.3A , Ib=0.06A 1.2 V Turn On Time ton Ic=0.3A RL=500fl 1 US Storage


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PDF 000757b KSC2751 50LECTORfMtTTER 00Q7Sfll KSC2752 NPN Transistor 10A 400V L 10mH TS 4142 400V 10A NPN transistor
2009 - Not Available

Abstract: No abstract text available
Text: Category 2.5 400 VCE=2V, IC=0.3A VCE=2V, IC=0.3A IC=1A, IB=33mA 250 0.18 High-Frequency


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PDF 2SC6126 645mm* 10sec 2SC6126 16-Apr-09
MP4008

Abstract: 5a1a
Text: =0 IC=lmA, Ie =0 Ic=10mA, Ib =0 VCE=1V. Ic=0 .4A IC=0.3A , lB=lmA IC=0.3A , lB=lmA V c e =2V, IC=0.1A VCB


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PDF MP4008 MP4008 5a1a
2004 - LB124E

Abstract: HLB124E IC03 Solder HLB124E Datasheet NPN Transistor 600V TO-220 hlb124eb1
Text: Conditions IC=1mA IC=10mA IE=1mA VCB=600V VEB=9V, IC=0 IC=0.1A, IB=10mA IC=0.3A , IB=30mA IC=0.1A, IB=10mA IC=0.3A , IB=30mA VCE=5V, IC=0.3A VCE=5V, IC=0.5A VCE=5V, IC=1A VCE=10V, IC=0.3, f=1MHz *Pulse


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PDF HE6727 HLB124E HLB124E O-220 183oC 217oC 260oC LB124E IC03 Solder HLB124E Datasheet NPN Transistor 600V TO-220 hlb124eb1
2002 - IC 4047 datasheet

Abstract: HLB124E
Text: =1mA IC=10mA IE=1mA VCB=600V VEB=9V, IC=0 IC=0.1A, IB=10mA IC=0.3A , IB=30mA IC=0.1A, IB=10mA IC=0.3A , IB=30mA VCE=5V, IC=0.3A VCE=5V, IC=0.5A VCE=5V, IC=1A VCE=10V, IC=0.3, f=1MHz *Pulse Test


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PDF HE6727 HLB124E HLB124E O-220 IC 4047 datasheet
3DA89

Abstract: No abstract text available
Text: =5V IC=0.3A L VCE sat f=1000MHz VCC=28V GP Cob 1.0 1.0 15 100 20 60 IC=0.3A IB=0.06A VCC=28V Pi=2W PO PO=5W f=1000MHz 0.5 5 mA mA V W


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PDF 3DA89 26min 1000MHz 3DA89
2sc2809

Abstract: No abstract text available
Text: IEBO Emitter cut-off current VEB=6V; IC=0 100 A hFE DC current gain IC=0.3A ; VCE=4V Transition frequency IC=0.3A ; VCE=12V fT CONDITIONS 2 MIN TYP. MAX UNIT 50 20


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PDF 2SC2809 2sc2809
2SC3086

Abstract: No abstract text available
Text: current VEB=5V; IC=0 10 µA hFE-1 DC current gain IC=0.3A ; VCE=5V 15 hFE-2 DC current gain IC=1.5A ; VCE=5V 8 fT Transition frequency IC=0.3A ; VCE=10V 18 MHz


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PDF 2SC3086 O-220C 00V/3A 10MHz 2SC3086
2SA1110

Abstract: 2SC2590
Text: IC=-0.3A ;IB=-30mA -1.0 V VBEsat Base-emitter saturation voltage IC=-0.3A ;IB


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PDF 2SA1110 O-126 2SC2590 -30mA -150mA -50mA 2SA1110 2SC2590
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