The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LTC2656CIFE-L16#TRPBF Linear Technology LTC2656 - Octal 16-/12-Bit Rail-to-Rail DACs with 10ppm/°C Max Reference; Package: TSSOP; Pins: 20; Temperature Range: -40°C to 85°C
LT1126CJ8 Linear Technology IC DUAL OP-AMP, 200 uV OFFSET-MAX, 65 MHz BAND WIDTH, CDIP8, 0.300 INCH, HERMETIC, CERAMIC, DIP-8, Operational Amplifier
LT1057CJ8 Linear Technology IC DUAL OP-AMP, 1400 uV OFFSET-MAX, 5 MHz BAND WIDTH, CDIP8, 0.300 INCH, HERMETIC SEALED, CERDIP-8, Operational Amplifier
DC1746A-B Linear Technology EVALUATION KIT LOW EM1 LTM2881-5
LT685CH Linear Technology IC COMPARATOR, 2500 uV OFFSET-MAX, 5.5 ns RESPONSE TIME, MBCY10, METAL CAN, TO-5, 10 PIN, Comparator
LTC2262CUJ-12#TRPBF Linear Technology LTC2262-12 - 12-Bit, 150Msps Ultralow Power 1.8V ADC; Package: QFN; Pins: 40; Temperature Range: 0°C to 70°C

IC HXJ 2038 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
Solid State Micro Technology

Abstract: 2038 50hz 100hz generator K 2038 top octave generator SSM2038 Frequency multiplier 565 2C011 3 phase waveform generator 50hz voltage controlled oscillator music
Text: and negative inputs, which simplifies system design. The 2038 is fully temperature compensated and , %, clean edges being guaranteed by a comparator with internal hysteresis. The 2038 also features provision , change. Synchronization The 2038 can be synchronized to falling waveform edges (such as the sawtooth output of another 2038 ) by A.C. coupling the waveform into pin 4. Synchronization causes an immediate discharge of the 2038 timing capacitor. Scale Factor Adjustment Normally, scale factor adjustment will


OCR Scan
PDF SSM2038 200pf 100pF 200ft 2C011 Solid State Micro Technology 2038 50hz 100hz generator K 2038 top octave generator Frequency multiplier 565 2C011 3 phase waveform generator 50hz voltage controlled oscillator music
max 1786a

Abstract: 2SB1120 SANYO 1786A
Text: SANYO SEMICONDUCTOR CORP S2E D 7^1707b 00071t:S 4 2SB1120 T-Z1-/3 * 2038 PNP Epitaxial Planar , ) . Large current capacity ( IC =-2.5A, iop=-5A) . Very small size making it easy to provide , VEB= £FE(1) VCE= FE(2) VCE= VCE=' 'CE(sat) Ic =- J1(BR)CB0 Ic =- (BR)CEO Ic =- V(BR)EB0 ZE=- cob VCB= -16V,IE=0 -4V, IC =0 -2V, Ic =-500mA -2V, IC =-3A -10V, Ic =-50miy 1.5A,Ib=-0.15A 10UA,IE=0 1mA,Rng=co 10uA, Ic , F 320 f 280 G 560 Marking :BC hpg rank :E,F,G Case Outline 2038 (unit:mm) Es Emitter Ci Collector B


OCR Scan
PDF 1707b 00071t 2SB1120 250mm3 max 1786a SANYO 1786A
transistor 2038

Abstract: 2SA1729 S60S6
Text: SANYO SEMICONDUCTOR CORP 22E D 7Tì7Q7b OOG?OaS b 2SA1729 % 2038 -T-37-/Ó PNP Epitaxial , Vcbo Collector to Emitter Voltage Vceo Emitter to Base Voltage Vebo Collector Current Ic Peak , -40V,IE=0 -1 pA Emitter Cutoff Current Iebo VEB = -3V, IC = 0 -1 PA DC Current Gain hpE(l) VCE = -2V, IC = -100mA 705« 2805« hFE(2) VCE = — 2V,I(j= — 1.5A 25 Gain-Bandwidth Product fT VCE = _2V, IC =- 100mA 300 MHz Output Capacitance Cob VCB = — 10V,f= 1MHz 18 pF C-E Saturation


OCR Scan
PDF 2SA1729 -T-37-/Ã 250mm2 transistor 2038 2SA1729 S60S6
pa 2030a

Abstract: 2SC4520 QGQ711G K 2038
Text: SANYO SEMICONDUCTOR CORP 22E D 7 2038 NPN Epitaxial Planar , Current ic 1.5 A Peak Collector Current lcn 3 A Collector Dissipation Pq Mounted on ceramic board , Emitter Cutoff Current Iebo Veb=3V, Ic =0 I pA DC Current Gain hpE(l) VCB=2V, Ic =100mA 100* 40058 hFE(2) VCE=2V, IC =1.5A 40 Gain-Bandwidth Product fT Vce = 2V, Ic = 100mA 300 MHz Output Capacitance Cob VCB=10V,f=lMHz 13 pF C-E Saturation Voltage VCE(sat) Ic =800mA,IB=40mA 0.25 0.7 V B-E


OCR Scan
PDF n707fe, QGQ711G 2SC4520 250mm2 pa 2030a K 2038
2sd209

Abstract: No abstract text available
Text: 0.8 60 90 120 a Case Outline 2038 I j l LLUJ n ~ £ PN P NPN ic Ifi E: Emitter C , , 2SD2099 © 3174 T -3 3 -/7 % 2038 - r 3 3 -0 5 PNP/NPN Epitaxial Planar Silicon Transistors , Emitter Voltage Vceo V (- )6 Emitter to Base Voltage Vebo A (- )3 Collector Current Ic A (- )5 Peak Collector Current Ic d Pc Mounted on ceramic board (250mm2 X 0.8mm) 1.5 W Collector Dissipation 150 °C , = (-)0.5A V c e = (-)2 V jIc = (-)2 A Vce = (-)2V ,I c = (-)0.5A VCB= (- )10V,f= 1MHz IC = (- )1A


OCR Scan
PDF 00072S3 2SB1394, 2SD2099 2SB1394 2sd209
Not Available

Abstract: No abstract text available
Text: 2038 N P N Epitaxial Planar Silicon Transistor High-Current Switching Applications ©731A , to provide high-density, small-sized hybrid IC 's. Absolute Maxiaam Ratings at Ta=25°C Collector , ) VBE(sat) tQn unit V V V A A mW W °C °C VCB=^0V,IE=0 VEB=^V, IC =0 VQg=2V,Ijj=0.5A Vc e =2V, Ic =3A Vc e =10V,5( :50mA typ 120* 95 Gain-Bandwidth Product Output Capacitance VCB=10V*f=1MHz C-E Saturation Voltage Ic=^A,IB=^0mA B-E Saturation Voltage Ic =3A»IB=®0mA


OCR Scan
PDF 2SD1628
UA8F

Abstract: No abstract text available
Text: © 1784B T - Z f - Z t % 2038 P N P /N P N Epitaxial Planar Silicon Transistors Low-Voltage , voltage. . Very sma l l size making it easy to provide high-density, IC 's ( ): 2SB1118 Absolute M a x i , -55 to +150 min :-)15V, Ic =0 VCB = I " -)4V, IC =0 VE B =(' VcË=(`- )Z]I> IC =(`- )50mk VQg=(-)2V|lQ=(-)500mA VCE =(-)10V, Ic =(-)50mA. I c = ^" ^niA,IB=(-)0.5mA typ CBO 'CEO ÍEB0 (-)20 unit V V V A A mW , IC =(->1°°mA,IB =(-)10mA (-60K-120) mV V Ic =(-)100mA,IB =(-)10mA B-E Saturation Voltage )0.8(-)1.2


OCR Scan
PDF H707b 2SB1118, 2SD1618 1784B 2SB1118 250mm1 UA8F
2000 - Not Available

Abstract: No abstract text available
Text: 2 2 SSB Third Order Intercept Point, f1 = 900 MHz, f2 = 938 MHz f1 = 2.0 GHz, f2 = 2.038 GHz , coil in order to adjust Q and connect the supply voltage. Supply voltage pin for the IC . In the UPC2721 , ) 0.0 2.4 GND pin for the IC . Pin 7 and pin 8 are inputs to a doublebalanced mixer. Either pin can be , 900 MHZ fRF2 = 938 MHZ fLO = 1.3 GHZ fRF1 = 2.0 GHZ fRF2 = 2.038 GHZ fLO = 2.4 GHZ -60 fRF1 = 900 MHZ fRF2 = 938 MHZ fLO = 1.3 GHZ (0 dBm) fRF1 = 2.0 GHZ fRF2 = 2.038 GHZ fLO = 2.4 GHZ (0 dBm) -40


Original
PDF UPC2721GV UPC2722GV UPC2721 UPC2722 24-Hour
PC2721

Abstract: uPC272 UPC2722GV UPC2722GR UPC2722 UPC2721GV UPC2721GR UPC2721 SMV1204-04 upc27
Text: f1 = 2.0 GHz, f2 = 2.038 GHz dB dB 9 11 dBm dBm 13 15 +10 +8.5 MAX 37 2.0 , adjust Q and connect the supply voltage. 4 VCC 5.0 Supply voltage pin for the IC . 5 IF , . 8 RF input1 5 GND pin for the IC . 7 UPC2722 2.4 7 8 UPC2721GR, GV , IM3 -30 fRF1 = 900 MHZ fRF2 = 938 MHZ fLO = 1.3 GHZ (0 dBm) fRF1 = 2.0 GHZ fRF2 = 2.038 GHZ , GHZ fRF2 = 2.038 GHZ fLO = 2.4 GHZ -40 -50 -60 -40 -30 -20 -10 Input Power, PIN


Original
PDF UPC2721GR UPC2721GV UPC2722GR UPC2722GV UPC2721 UPC2722 UPC2721GR 2500/Reel UPC2722GR PC2721 uPC272 UPC2722GV UPC2721GV SMV1204-04 upc27
2000 - c2722

Abstract: 0frf
Text: , f2 = 938 MHz f1 = 2.0 GHz, f2 = 2.038 GHz Notes: 1. Mounted on a 50 x 50 x 1.6 mm thick glass , -10 0 IM3 IM3 fRF1 = 900 MHZ fRF2 = 938 MHZ fLO = 1.3 GHZ fRF1 = 2.0 GHZ fRF2 = 2.038 GHZ fLO = 2.4 GHZ -60 fRF1 = 900 MHZ fRF2 = 938 MHZ fLO = 1.3 GHZ (0 dBm) fRF1 = 2.0 GHZ fRF2 = 2.038 GHZ , pin for the IC . In the UPC2721 the amplifier is designed as single-ended push-pull amplifier. This pin , External LO Test Circuit 6 7 GND RF input2 (bypass) 0.0 2.4 GND pin for the IC . Pin 7 and pin 8


Original
PDF UPC2721GV UPC2722GV UPC2722GV UPC2721GV-E1 UPC2722GV-E1 1000/Reel 1000/Reel 24-Hour c2722 0frf
sj 2038

Abstract: ic sj 2038 scr gate drivers ic ec sanyo 2SD1628 p10j T35 ET sanyo sdk marking sdk
Text: SANYO SEMICONDUCTOR CORP E5E D 7cìci707b 000724b 4 2SD1628 T-35 -15 % 2038 NPN Epitaxial , , small-sized hybrid IC 's. Absolute Maxiaum Ratings at Ta=25°C Collector to Base Voltage Collector to Emitter , Characteristics at Ta=25°C Collector Cutoff Current XCB0 VCB=50V,IE=0 ¡ff» hpE(2) VEb=5V, Ic =0 VCE=2V, IC , =1MHz vCE(sat) Ic =3A'IB=60mA VBE(sat) Ics3k'IB'*60mA t°n :stg min typ 120» 95 max unit 100 nA 100 nA , 2SD1628 T-35-Ì5 o H 8 3 b Î- s i ■H O u IC - VCE 'Pulse W&. - aogy«-"""" *"" 1


OCR Scan
PDF ci707b 000724b 2SD1628 250mm2 sj 2038 ic sj 2038 scr gate drivers ic ec sanyo p10j T35 ET sanyo sdk marking sdk
2000 - PC2721

Abstract: SMV1204-04 UPC2721 UPC2721GR UPC2722 UPC2722GR
Text: = 2.0 GHz, f2 = 2.038 GHz dB dB 9 11 dBm dBm 13 15 +10 +8.5 MAX 37 2.0 600 , adjust Q and connect the supply voltage. 4 VCC 5.0 Supply voltage pin for the IC . 5 IF , . 8 RF input1 5 GND pin for the IC . 7 UPC2722 2.4 7 8 UPC2721GR, UPC2722GR , MHZ fRF2 = 938 MHZ fLO = 1.3 GHZ (0 dBm) fRF1 = 2.0 GHZ fRF2 = 2.038 GHZ fLO = 2.4 GHZ (0 dBm , -10 -20 -30 IM3 fRF1 = 900 MHZ fRF2 = 938 MHZ fLO = 1.3 GHZ fRF1 = 2.0 GHZ fRF2 = 2.038 GHZ


Original
PDF UPC2721GR UPC2722GR UPC2721 UPC2722 24-Hour PC2721 SMV1204-04 UPC2721GR UPC2722GR
1999 - Not Available

Abstract: No abstract text available
Text: 2 2 SSB Third Order Intercept Point, f1 = 900 MHz, f2 = 938 MHz f1 = 2.0 GHz, f2 = 2.038 GHz , resistor or choke coil in order to adjust Q and connect the supply voltage. Supply voltage pin for the IC , (bypass) 0.0 2.4 GND pin for the IC . Pin 7 and pin 8 are inputs to a doublebalanced mixer. Either , IM3 IM3 fRF1 = 900 MHZ fRF2 = 938 MHZ fLO = 1.3 GHZ fRF1 = 2.0 GHZ fRF2 = 2.038 GHZ fLO = 2.4 GHZ -60 fRF1 = 900 MHZ fRF2 = 938 MHZ fLO = 1.3 GHZ (0 dBm) fRF1 = 2.0 GHZ fRF2 = 2.038 GHZ fLO = 2.4


Original
PDF UPC2721GR UPC2721GV UPC2722GR UPC2722GV UPC2721 UPC2722 UPC2721GV-E1 UPC2722GV-E1
2013 - Not Available

Abstract: No abstract text available
Text: KBM Capacitance WVDC (µF) IC PART NUMBER Maximum Impedance ESR (mΩ) Ω +20°C/120 Hz, 10 , , High Frequency Low Impedance/ESR,8000 to 10000 hours Capacitance WVDC (µF) IC PART NUMBER , 1230 10x20 22 63 226KBM063M 6.786 2.038 180 6.3x11 1000 25 108KBM025M 0.232 0.171 1580 12.5x20 22 100 226KBM100M 6.032 2.038 190 8x11.5 1000


Original
PDF 688KBM010M 16x31 227KBM050M 10x16 688KBM016M 18x35 227KBM063M 10x25 109KBM6R3M
2013 - Not Available

Abstract: No abstract text available
Text: €¢ www.illcap.com • www.illinoiscapacitor.com KBM Capacitance WVDC (µF) IC PART NUMBER Maximum , Capacitance WVDC (µF) IC PART NUMBER Maximum Impedance ESR (mΩ) Ω +20°C/120 Hz, 10°C +20°C , 108KBM016M 0.265 0.18 1230 10x20 22 63 226KBM063M 6.786 2.038 180 6.3x11 , 2.038 190 8x11.5 1000 35 108KBM035M 0.199 0.162 1940 12.5x25 33 35


Original
PDF 688KBM010M 16x31 227KBM050M 10x16 688KBM016M 18x35 227KBM063M 10x25 109KBM6R3M
2002 - L-Band converter uhf

Abstract: SMV1204 uPC2721 SMV1204-04 UPC2721GV UPC2721GV-E1 impedance coil 900 uH 900 mhz frequency generator 2.2 GHz local oscillator ic
Text: Third Order Intercept Point, f1 = 900 MHz, f2 = 938 MHz f1 = 2.0 GHz, f2 = 2.038 GHz dB dB 9 11 , GHZ (0 dBm) fRF1 = 2.0 GHZ fRF2 = 2.038 GHZ fLO = 2.4 GHZ (0 dBm) -40 -50 -60 -40 -30 , Supply voltage pin for the IC . 5 IF Output 2.9 EQUIVALENT CIRCUIT Internal oscillator , GND pin for the IC . 7 RF input2 (bypass) 2.4 Pin 7 and pin 8 are inputs to a


Original
PDF UPC2721GV UPC2721GV L-Band converter uhf SMV1204 uPC2721 SMV1204-04 UPC2721GV-E1 impedance coil 900 uH 900 mhz frequency generator 2.2 GHz local oscillator ic
2002 - SMV1204-04

Abstract: UPC2722 UPC2722GV UPC2722GV-E1 PIN DIAGRAM of ic 4028
Text: Intercept Point, f1 = 900 MHz, f2 = 938 MHz f1 = 2.0 GHz, f2 = 2.038 GHz 21 13 15 Notes: 1 , 938 MHZ fLO = 1.3 GHZ fRF1 = 2.0 GHZ fRF2 = 2.038 GHZ fLO = 2.4 GHZ -40 -50 -60 -40 -30 , supply voltage. 4 VCC 5.0 Supply voltage pin for the IC . 5 IF Output 5.0 The IF , dependent on external inductance. 6 GND 0.0 GND pin for the IC . 7 RF input2 (bypass


Original
PDF UPC2722GV UPC2722GV SMV1204-04 UPC2722 UPC2722GV-E1 PIN DIAGRAM of ic 4028
1998 - 2SA1575

Abstract: 2SC4080
Text: Adoption of FBET process. unit:mm 2038 [2SA1575/2SC4080] E : Emitter C : Collector B : Base , )200 V VEBO IC (­)4 (­)100 Collector Current (Pulse) ICP (­)200 mA Collector , hFE1 VEB=(­)2V, IC =0 VCE=(­)10V, IC =(­)10mA Gain-Bandwidth Product hFE2 fT VCE=(­)10V, IC =(­)60mA VCE=(­)30V, IC =(­)30mA Output Capacitance Cob VCB=(­)30V, f=1MHz 40* 320 , Saturation Voltage IC =(­)20mA, IB=(­)2mA IC =(­)20mA, IB=(­)2mA pF (­)1.0 V (­)1.0 V


Original
PDF EN3171 2SA1575/2SC4080 2SA1575/2SC4080] 2SA1575 2SA1575 2SC4080
1998 - 2SA1418

Abstract: 2SC3648 INVERTER BOARD SANYO
Text: , inverter. unit:mm 2038 Features [2SA1418/2SC3648] · Adoption of FBET, MBIT processes. · High , Voltage VCEO VEBO (­)160 V (­)6 V IC (­)0.7 A Collector Current (Pulse) ICP , IEBO hFE1 VCE=(­)5V, IC =(­)100mA 100* hFE2 fT VCE=(­)5V, IC =(­)10mA VCE=(­)10V, IC =(­)50mA VCE(sat) IC =(­)250mA, IB=(­)25mA Unit 90 Gain-Bandwidth Product max VCB=(­)120V, IE=0 VEB=(­)4V, IC =0 DC Current Gain typ Collector-to-Emitter Saturation Voltage (­


Original
PDF EN1788A 2SA1418/2SC3648 2SA1418/2SC3648] 2SA1418 2SA1418 2SC3648 INVERTER BOARD SANYO
2014 - Not Available

Abstract: No abstract text available
Text: 17 8 8 6 6 6 65 55 65 45 55 3 3 3 3 3 1.981 2.153 2.038 2.449 2.216 , 6 6 70 60 100 50 65 3 3 3 3 3 1.909 2.121 1.643 2.324 2.038 1.718 1.909 , 2.216 2.038 1.994 1.834 0.886 0.815 3 3 3 3 3 3 1.350 1.500 1.897 1.643 1.897 , 500 ΔC /C within ±10% of initial value hours and then recovery 1-2 hours at room temperature. DF , discharge *Initial Limit 96 ■APRIL 2014 DCL ΔC /C DF +20ºC -55ºC IL* n/a n/a +0/-10%


Original
PDF 1000x
2014 - Not Available

Abstract: No abstract text available
Text: 0.861 1.111 0.980 6.2 8.8 8 6 65 65 3 3 1.981 2.038 1.783 1.834 0.792 , 3 1.458 1.909 2.121 1.643 2.324 2.038 1.312 1.718 1.909 1.479 2.091 1.834 0.583 , visible damage DCL 1.25 x initial limit 125ºC, 0V, 2000h ΔC /C within ±10% of initial value DF , without applied voltage DCL 1.5 x initial limit at 65±2ºC and 95±2% relative humidity for 500 ΔC /C , Determine after leaving for 1000 hours at 85±2ºC, 85% relative humidity and rated voltage and then ΔC /C


Original
PDF 1000x
1998 - 2SC3646

Abstract: 2SA1416
Text: easy to provide highdensity, small-sized hybrid ICs. unit:mm 2038 [2SA1416/2SC3646] E : Emitter , Unit VCBO VCEO (­)120 V (­)100 V VEBO IC (­)6 V (­)1 A Collector , Cutoff Current IEBO Gain-Bandwidth Product hFE fT VCE=(­)5V, IC =(­)100mA VCE=(­)10V, IC =(­)100mA Output Capacitance Cob VCB=(­)10V, f=1MHz typ VCB=(­)100V, IE=0 VEB=(­)4V, IC , (13) pF 8.5 Collector-to-Emitter Saturation Voltage VCE(sat) Unit IC =(­)400mA, IB=(­


Original
PDF EN2005A 2SA1416/2SC3646 2SA1416/2SC3646] 2SA1416 2SC3646 2SA1416
3171 i.c

Abstract: 2SA1575 2SC4080
Text: Vebo ( —)4 V Collector Current Ic (-)100 mA Collector Current(Pulse) Icp ( —)200 mA , Iebo VEb = -)2VtIc = 0 (-)i.o PA DC Current Gain hFE(D VCE = -)10V, Ic = (-)10mA 40* 320* hFE(2) VCE = -)10V, IC = (-)60mA 20 Gain-Bandwidth Product fT VCE = -)30V( Ic = C-)30mA 400 MHz Output , Capacitance C-E Saturation Voltage VcE(sat) IC =(- -)20mA,IB = ("-)2mA (-)i.o V B-E Saturation Voltage , €”)200 V C-E Breakdown Voltage V(BR)CEO Ic =(- )lmA,RßE= 00 ( —)200 V E-B Breakdown Voltage V(BR


OCR Scan
PDF 2SA1575/2SC4080 2SA1575 250mm2 3171 i.c 2SA1575 2SC4080
10PA

Abstract: 2SB1325 2SD1999
Text: Temperature Storage Temperature VcBO VcEO Vebo ic Icp Pc Mounted on ceramic board (250mm2 X 0.8mm) Tj , Connection Collector ICBO VCB = (-)20V,Ie = 0 hFE(l) VCE = ( - )2V, IC = (—)0.5A hFEC2) Vce = (-)2V, Ic = C-)3A fT Vce = (-)2V, Ic = (-)0.5A Cob VCB = (-H0V,f=:lMHz VcE(sat) Ic = (-)3A,IB = (-H50mA VßE(sat) Ic = ( - )3A,IB = ( - )150mA V(BR)CBO !c = ( - )10pA,IE = 0 V(BR)CEOd) IC = (-)10PAîRBB=00 V(BR)CEo(2) Ic = (-)10mA,RBE=~ Vp IF = 0.5A %E min 70 50 typ max (-)l.O ( —)25 ( —)25 ( â


OCR Scan
PDF EN3175 2SB1325/2SD1999 2SB1325 250mm2 10PA 2SD1999
1998 - 2SA1417

Abstract: 2SC3647 2006-1
Text: easy to provide highdensity, small-sized hybrid ICs. unit:mm 2038 [2SA1417/2SC3647] E : Emitter , IC (­)2 A Collector Current (Pulse) ICP (­)3 A Collector Dissipation PC , ICBO Emitter Cutoff Current IEBO Gain-Bandwidth Product hFE fT VCE=(­)5V, IC =(­)100mA VCE=(­)10V, IC =(­)100mA Output Capacitance Cob VCB=(­)10V, f=1MHz typ VCB=(­)100V, IE=0 VEB=(­)4V, IC =0 DC Current Gain Ratings min max (­)100 nA (­)100 nA 100* 400


Original
PDF EN2006A 2SA1417/2SC3647 2SA1417/2SC3647] 2SA1417 2SA1417 2SC3647 2006-1
Supplyframe Tracking Pixel