The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT5568EUF Linear Technology RF/Microwave Modulator/Demodulator, 700 MHz - 1050 MHz RF/MICROWAVE I/Q MODULATOR, 4 X 4 MM, PLASTIC, MO-220WGGC, QFN-16
LT5568EUF#TR Linear Technology RF/Microwave Modulator/Demodulator, 700 MHz - 1050 MHz RF/MICROWAVE I/Q MODULATOR, 4 X 4 MM, PLASTIC, MO-220WGGC, QFN-16
LT5534ESC6PBF Linear Technology RF/Microwave Detector, 50 MHz - 3000 MHz RF/MICROWAVE LINEAR DETECTOR, LEAD FREE, PLASTIC, SC-70, MO-203AB, 6 PIN
LTC5508ESC6-#PBF Linear Technology RF/Microwave Detector, 300 MHz - 7000 MHz RF/MICROWAVE LINEAR DETECTOR, 12 dBm INPUT POWER-MAX, PLASTIC, SC6, SC-70, 6 PIN
LT5534ESC6TRPBF Linear Technology RF/Microwave Detector, 50 MHz - 3000 MHz RF/MICROWAVE LINEAR DETECTOR, LEAD FREE, PLASTIC, SC-70, MO-203AB, 6 PIN
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

Hewlett-Packard transistor microwave Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1997 - A008 amplifier TRANSISTOR

Abstract: FET transistors with s-parameters transistor A006 high power FET transistor s-parameters Hewlett-Packard transistor microwave 1084 transistor RF Transistor s-parameter hewlettpackard rf transistor A008 RF transistors with s-parameters
Text: Literature High Frequency Transistor Primer Series Primer 1 Silicon Bipolar Electrical Characteristics , to semiconductor devices Publication No. 5091-8803E AN A005 Transistor Chip Use Discussion of , AN A006 Mounting Considerations for Packaged Microwave Semiconductors Mechanical, thermal, and soldering information Publication No. 5091-8696E AN A008 Microwave Oscillator Design Using S-Parameters , 1084 2 Stage 800 ­ 1000 MHz Amplifier Using the AT-41511 Silicon Bipolar Transistor A two stage


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PDF 5091-8350E 5966-0935E AT-41511 5964-3853E AT-32063 5966-0781E A008 amplifier TRANSISTOR FET transistors with s-parameters transistor A006 high power FET transistor s-parameters Hewlett-Packard transistor microwave 1084 transistor RF Transistor s-parameter hewlettpackard rf transistor A008 RF transistors with s-parameters
1997 - transistor A006

Abstract: bipolar transistor s-parameter a006 A004R Catalog Bipolar Transistor RF Transistor s-parameter A008 AN1084 A008 amplifier TRANSISTOR A008 TRANSISTOR
Text: . 4-20 AN A005 ­ Transistor Chip Use . 4-20 AN A006 ­ Mounting Considerations for Packaged Microwave Semiconductors . 4-20 AN A008 ­ Microwave Oscillator Design , . 4-20 AN 1084 ­ 2 Stage 800 ­ 1000 MHZ Amplifier Using the AT-41511 Silicon Bipolar Transistor . 4-20 AN-1131 ­ Low Noise Amplifiers for 320 MHz and 850 MHz Using the AT-32063 Dual Transistor


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PDF AT-41511 AN-1131 AT-32063 transistor A006 bipolar transistor s-parameter a006 A004R Catalog Bipolar Transistor RF Transistor s-parameter A008 AN1084 A008 amplifier TRANSISTOR A008 TRANSISTOR
1997 - Bipolar Junction Transistor

Abstract: 414 rf transistor AT-420
Text: RF and Microwave Silicon Bipolar Transistors Characteristics The silicon bipolar transistor is , capabilities of an interdigitated microwave bipolar junction transistor are strongly related to two design , transistors have over other transistor types include mature technology (both in the understanding of the , . Hewlett-Packard manufactures bipolar junction transistors using the Self-Aligned Transistor (SAT) process. This , the transistor . Finer pitches result in more gain and lower noise figure at higher frequencies


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PDF AT-640 AT-414/415 AT-420 Bipolar Junction Transistor 414 rf transistor
1993 - RF transistors with s-parameters

Abstract: MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor s11 s12 s21 s22 Hewlett-Packard transistor microwave
Text: High-Frequency Transistor Primer Part II Noise and S-parameter Characterization This is the second part of the Hewlett-Packard High Frequency Transistor Primer series. It is an introduction to the noise and S-parameter characterization of GaAs FET and silicon bipolar transistors for the microwave , of the High Frequency Transistor Primer series currently available are: Part I, Electrical Characteristics (of bipolar microwave transistors); Part III, Thermal Properties (of silicon bipolar and GaAs FET


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PDF 5091-8350E 5968-1411E RF transistors with s-parameters MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor s11 s12 s21 s22 Hewlett-Packard transistor microwave
1997 - high frequency transistor ga as fet

Abstract: ATP-1054 bipolar transistor s-parameter high power FET transistor s-parameters Transistor s-parameter
Text: High-Frequency Transistor Primer Part IV GaAs FET Characteristics Table of Contents I. II , Transistor Structure . A. What is a , . D. FET Elements that Affect Microwave Performance . E. Why a GaAs FET Instead of a GaAs Bipolar or Silicon Transistor ? . , . FET: Field Effect Transistor . A type of transistor in which the current is controlled by the


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PDF ATP-1054, 5963-2025E 5966-0779E high frequency transistor ga as fet ATP-1054 bipolar transistor s-parameter high power FET transistor s-parameters Transistor s-parameter
1997 - RFIC and MMIC Amplifiers

Abstract: HPMX-3002 mmic ina Hewlett-Packard transistor microwave
Text: RFIC and MMIC Amplifiers Hewlett-Packard offers a broad line of Radio Frequency Integrated Circuit (RFIC) and Monolithic Microwave Integrated Circuit (MMIC) amplifiers for use in all aspects of , 's state-of-the-art 10 GHz fT, 25 GHz fMAX silicon transistor process is used to manufacture the MSA line of RFIC , bias elements. ISOSAT Process: Trench isolation is coupled with the SAT transistor engine to , in the microwave and millimeter wave frequency ranges. These devices, supplied only as chips, are


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1993 - transistor s11 s12 s21 s22

Abstract: 5091-8350E MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT high power FET transistor s-parameters s11a1 s-parameter s11 s12 s21
Text: High-Frequency Transistor Primer Part II Noise and S-parameter Characterization This is the second part of the Hewlett-Packard High Frequency Transistor Primer series. It is an introduction to the noise and S-parameter characterization of GaAs FET and silicon bipolar transistors for the microwave , of the High Frequency Transistor Primer series currently available are: Part I, Electrical Characteristics (of bipolar microwave transistors); Part III, Thermal Properties (of silicon bipolar and GaAs FET


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PDF 5091-8350E 5968-1411E transistor s11 s12 s21 s22 5091-8350E MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT high power FET transistor s-parameters s11a1 s-parameter s11 s12 s21
1998 - GaAs FET operating junction temperature

Abstract: 5257 transistor chip die hp transistor HP transistor cross reference mtt2
Text: small-signal microwave transistor is 100 ­ 200 mW. Figure 11 shows a derating curve. Pmax is determined from , High Frequency Transistor Primer Part III Thermal Properties Table of Contents I. Thermal , . Definition A transistor , bipolar or FET, has a maximum temperature which cannot be exceeded without destroying the device or at least shortening its life. The heat is generated in a bipolar transistor directly under the emitters and very close to the upper surface of the die. In the microwave FET heat is also


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PDF ED-19, 5966-3084E GaAs FET operating junction temperature 5257 transistor chip die hp transistor HP transistor cross reference mtt2
AT-420

Abstract: No abstract text available
Text: mLlíM PA CK A R D H EW LETT' RF and Microwave Silicon Bipolar Transistors Characteristics The silicon bipolar transistor is a semiconductor device, with amplification due to current gain. The advantages silicon bipolar transistors have over other transistor types include mature technology (both in , Self-Aligned Transistor (SAT) process. This state-of-the-art silicon process yields and fT of 10 GHz and an fM , perfor mance, repeatability, and reliability. The performance capabilities of an interdigitated microwave


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PDF AT-414/415 AT-420
1997 - 2n3478

Abstract: RF Transistor s-parameter
Text: measurement environment. HEWLETT-PACKARD JOURNAL Cover: A NEW MICROWAVE INSTRUMENT SWEEP MEASURES GAIN, PHASE IMPEDANCE WITH SCOPE OR METER READOUT; page 2 See Also: THE MICROWAVE ANALYZER IN THE FUTURE , , HP Vice President and General Manager, Microwave and Communications Group FEBRUARY 1967 , predicted, again without regard to the contents of the network. S-parameters are important in microwave , into a measurement or design problem. To show how s-parameters ease microwave design, and how you can


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1997 - HMMC-2006

Abstract: 9x-series HPMX-5002 HPMX-5001 HPMX-3003 HP-25 HMMC-2027 HMMC-2007 HMMC-1002 in 3003 TRANSISTOR
Text: RFIC Mixers, Modulators, Switches, Attenuators, Frequency Dividers, and Other Functions Characteristics Hewlett-Packard manufactures a broad line of innovative microwave and RF integrated circuits , Process: Trench isolation is coupled with the SAT transistor engine to create a process optimized for , make it suitable for microwave applications. It has a nominal fT of 25 GHz. MESFET processes , offers a variety of high performance chip products for use at microwave and millimeter wave


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PDF MGS-71 MGS-70 HMMC-2006 9x-series HPMX-5002 HPMX-5001 HPMX-3003 HP-25 HMMC-2027 HMMC-2007 HMMC-1002 in 3003 TRANSISTOR
1997 - FET transistors with s-parameters

Abstract: 5091-8824E Hewlett-Packard transistor microwave hewlettpackard rf transistor RF transistors with s-parameters 5091-8350E bipolar transistor s-parameter microwave oscillator design RF Transistor s-parameter AN-A008
Text: Literature High Frequency Transistor Primer Series Primer 2 Noise and S-Parameter Characterization Publication No. 5091-8350E Primer 3A Thermal Resistance Publication No. 300126 AN A008 Microwave Oscillator , No. 5091-8824E AN A005 Transistor Chip Use Discussion of procedures for proper storage, die attach


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PDF 5091-8350E 5964-3431E 5091-8819E 5091-9315E 5091-8824E 5091-8802E FET transistors with s-parameters Hewlett-Packard transistor microwave hewlettpackard rf transistor RF transistors with s-parameters bipolar transistor s-parameter microwave oscillator design RF Transistor s-parameter AN-A008
1997 - laser diode spice modeling

Abstract: laser diode spice model simulation spice ATF 10136 ATF13136 atf-10136 spice MSA-09 mmic a20 MSA-0311 S parameters for ATF 10136 AT-41500
Text: Guide HPRFhelp, an Electronic Selection Guide and information database for HP's RF and Microwave , Packages Soldering - Small signal microwave semiconductor packages can use the attachment of the leads , transistor or MMIC can suffer permanent electrical damage if any of its breakdown voltages are exceeded , thermal connections should be made for packaged microwave devices. There are two primary package types , volumes usually encountered in the microwave industry, hand soldering has been by far the most popular


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PDF 42E-13 04E-1 53E-13 5E-12 87E-2 1E-14) INA-12 900MHz 900E6) laser diode spice modeling laser diode spice model simulation spice ATF 10136 ATF13136 atf-10136 spice MSA-09 mmic a20 MSA-0311 S parameters for ATF 10136 AT-41500
1997 - ATF-13484

Abstract: atf 36163 Low Noise Amplifier low noise design ATF 10136 amplifier TRANSISTOR 12 GHZ A008 amplifier TRANSISTOR ATF13484 ATF pHEMT transistor atf A007 Microwave GaAs FET catalogue
Text: . 5-15 AN A005 ­ Transistor Chip Use . 5-15 AN A006 ­ Mounting Considerations for Packaged Microwave Semiconductors , . 5-15 AN A008 ­ Microwave Oscillator Design


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PDF ATF-10236 ATF-10136, ATF-13736, ATF-13484 ATF-21186 ATF-36163 ATF-36163 ATF-36077 ATF-13484 atf 36163 Low Noise Amplifier low noise design ATF 10136 amplifier TRANSISTOR 12 GHZ A008 amplifier TRANSISTOR ATF13484 ATF pHEMT transistor atf A007 Microwave GaAs FET catalogue
2013 - HMXR-5001

Abstract: 5082-0825 HP 5082 7000 13001 YF 09 TRANSISTOR 33150A 2N6838 hsch-1001 HXTR-5101 hall marking code A04 5082-2815
Text: , CA 95050 (408) 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog 1984-85 , become a high volume supplier of quality, competitively priced RF / Microwave Diodes and Transistors , products at our domestic divisions in California, iv RF and Microwave Semiconductors (, " , dependability of your products is on the line, you can count on Hewlett-Packard RF and Microwave Semiconductor Devices for excellent product consistency. v About This Catalog This Microwave Semiconductor


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1997 - fet ft 20 GHZ

Abstract: transistor atf ATF-36xxx high power FET transistor s-parameters
Text: transistor is a semiconductor device with amplification due to voltage gain. The advantages GaAs FETs have over other transistor types stem from the intrinsic high mobility of electrons in gallium arsenide , the microwave region, including high fT, high fMAX, and very low noise figure. GaAs FETs find wide , microwave silicon processes is diminishing) both as amplifiers and oscillators, or as low noise amplifiers , Electron Mobility Transistor ATF-4x series The ATF-4x process is optimized for power. This process


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PDF ATF-45xxx: ATF-21xxx: ATF-25xx: ATF-44xxx: ATF-46xxx: fet ft 20 GHZ transistor atf ATF-36xxx high power FET transistor s-parameters
1999 - Not Available

Abstract: No abstract text available
Text: transistor is a semiconductor device with amplification due to voltage gain. The advantages GaAs FETs have over other transistor types stem from the intrinsic high mobility of electrons in gallium arsenide , microwave region, including high fT, high fMAX, and very low noise figure. GaAs FETs find wide applications as the semiconductor device of choice at frequencies above 4 GHz (where the gain of most microwave , Electron Mobility Transistor (PHEMT) process. This process uses MBE material to create a GaAs ­ AlGaAs ­


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PDF noiseTF-34xxx: ATF-36xxx: ATF-44xxx: ATF-45xxx: ATF-46xxx:
1997 - ATF at 2.4 Ghz

Abstract: ATF-13484 bipolar transistor 2.4 ghz s-parameter ATF-36163 ATF pHEMT ATF13136 amplifier TRANSISTOR 12 GHZ low noise design ATF 10136 bipolar transistor ghz s-parameter phemt biasing ATF-36077
Text: Literature High Frequency Transistor Primer Series Primer 2 Noise and S-Parameter Characterization , Publication No. 5091-8803E AN A005 Transistor Chip Use Discussion of procedures for proper storage, die , Considerations for Packaged Microwave Semiconductors Mechanical, thermal, and soldering information , mixers, along with a 950 50 1450 MHz IF amplifier. Publication No. 5091-8825E AN A008 Microwave


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PDF 5091-8350E 5966-0779E 5965-1235E ATF-36163 5965-5956E ATF-36077 5966-0783E ATF-36077 ATF at 2.4 Ghz ATF-13484 bipolar transistor 2.4 ghz s-parameter ATF pHEMT ATF13136 amplifier TRANSISTOR 12 GHZ low noise design ATF 10136 bipolar transistor ghz s-parameter phemt biasing ATF-36077
transistor A006

Abstract: microwave oscillator design AN1084 Catalog Bipolar Transistor RF Transistor s-parameter A004R
Text: .4-20 AN A005 - Transistor Chip U s e , .4-20 AN A008 - Microwave Oscillator Design , .4-20 AN 1084 - 2 Stage 800-1000 MHZ Amplifier Using the AT-41511Silicon Bipolar Transistor . 4-20 AN-1131 - Low Noise Amplifiers for 320 MHz and 850 MHz Using the AT-32063 Dual Transistor


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PDF AT-41511Silicon AN-1131 AT-32063 transistor A006 microwave oscillator design AN1084 Catalog Bipolar Transistor RF Transistor s-parameter A004R
1998 - high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz

Abstract: S11A1 Glossary of Microwave Transistor Terminology
Text: shown above were derived. (19) IV. Glossary of Microwave Transistor Terminology V(BR)CBO , High-Frequency Transistor Primer Part I Silicon Bipolar Electrical Characteristics Table of Contents Transistor Structure Types . A , . e. Maximum Frequency of Oscillation, fmax . IV. Glossary of Microwave Terminology , millimeter wave. The purpose of this primer series is to introduce microwave designers to the terminology


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PDF 5966-3085E high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz S11A1 Glossary of Microwave Transistor Terminology
1997 - AN-G005

Abstract: ATF-10736 ATF10236 ATF-10236 Hewlett-Packard MICRO-X TL05 TK11650U MSA-0686 HP346A tl055
Text: FET Amplifiers," Microwave Journal, October 1980, p. 73. 4. G. Gonzalez, Microwave Transistor , amplifiers in the microwave frequency region where silicon transistors can't provide the required gain and , second problem is that matching the typical microwave GaAs FET at lower frequencies for minimum noise , microwave frequencies this will generally produce a reasonable input VSWR, since opt and the complex , dB. The noise parameters and S-parameters of this transistor are summarized in Table 1. Design


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PDF ATF-10236 AN-G005 ATF-10736 ATF10236 Hewlett-Packard MICRO-X TL05 TK11650U MSA-0686 HP346A tl055
GaAs pHEMT Low Noise MMIC Amplifier

Abstract: No abstract text available
Text: W h ìl H EW LETT K KM PA CK A R D RFIC and MMIC Amplifiers Characteristics Hewlett-Packard offers a broad line of Radio Frequency Integrated Circuit (RFIC) and Monolithic Microwave Integrated Circuit (MMIC) amplifiers for use in all aspects of the communica tions industry'. Processes A variety of , 's state-of-the-art 10 GHz fx, 25 GHz fM A x silicon transistor process is used to manufactur e the MSA line of RFIC , bias elements. ISOSAT Process: Trench isolation is coupled with the SAT transistor engine to create a


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1997 - marking IAM transistor sot-23

Abstract: ATF-13170 transistor MARKING IAM IAM-XXX08 IAM-81008 HSMP 30XX HSMS-282X IAM-82 JESD22 HSMP-389X
Text: Reliability/Quality Philosophy Recognizing the increasing importance of microwave component reliability , into the manufacture of reliable microwave components: · The device must be designed with a , in the manufacture of the device. As a major manufacturer of microwave products, HewlettPackard , . In-process Control and Reliability Testing The reliability performance of microwave components can be , HSMP-380X HSMP-3800 HSMP-389X Si Bipolar Transistor ; Integrated Circuit HSMP-389B 84


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1995 - AVANTEK YIG tuned oscillator

Abstract: avantek YTO Avantek yig yig oscillator hp AVANTEK, yig yig tuned oscillator avantek yig oscillator yto oscillator yig oscillator avantek avantek vto
Text: Microwave Oscillator Design Application Note A008 NOTE: This publication is a reprint of a , FET dielectric resonator oscillator. Theory Microwave transistors can be used for both amplifier and oscillator applications. From the small signal s parameters of the transistor , the stability , 11 s 22 - s 21 s 12 ( 2) Note that since the transistor s parameters change with frequency, k also varies with frequency. A transistor is unconditionally stable at any frequency where k > 1. This


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PDF AN1091, ATF-36163 5965-1235E. AN1136, 5966-2488E. AN1139, INA-51063 5964-3431E 5968-3628E AVANTEK YIG tuned oscillator avantek YTO Avantek yig yig oscillator hp AVANTEK, yig yig tuned oscillator avantek yig oscillator yto oscillator yig oscillator avantek avantek vto
1995 - AVANTEK YIG tuned oscillator

Abstract: yig oscillator hp Avantek yig avantek yig oscillator AVANTEK, yig avantek YTO Design DC Stability Into Your Transistor Circuits yig oscillator avantek avantek vto yig tuned oscillator
Text: Microwave Oscillator Design Application Note A008 NOTE: This publication is a reprint of a , oscillator, and a 12 GHz GaAs FET dielectric resonator oscillator. Theory Microwave transistors can be , transistor , the stability factor k can be calculated from: k= 1 + D - s 11 - s 22 2 s 21 s 12 2 2 2 , (1) where k = s 11 s 22 - s 21 s 12 Note that since the transistor s parameters change with frequency, k also varies with frequency. ( 2) A transistor is unconditionally stable at any frequency


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PDF 5964-3431E 5968-3628E AVANTEK YIG tuned oscillator yig oscillator hp Avantek yig avantek yig oscillator AVANTEK, yig avantek YTO Design DC Stability Into Your Transistor Circuits yig oscillator avantek avantek vto yig tuned oscillator
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